CN109473340A - A kind of preparation method and microwave heating equipment of low temperature polycrystalline silicon - Google Patents
A kind of preparation method and microwave heating equipment of low temperature polycrystalline silicon Download PDFInfo
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- CN109473340A CN109473340A CN201811367000.XA CN201811367000A CN109473340A CN 109473340 A CN109473340 A CN 109473340A CN 201811367000 A CN201811367000 A CN 201811367000A CN 109473340 A CN109473340 A CN 109473340A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 146
- 238000010438 heat treatment Methods 0.000 title claims abstract description 138
- 238000002360 preparation method Methods 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 175
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 166
- 238000002425 crystallisation Methods 0.000 claims abstract description 146
- 230000008025 crystallization Effects 0.000 claims abstract description 146
- 229920005591 polysilicon Polymers 0.000 claims abstract description 109
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 255
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 239000007769 metal material Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
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- 238000011049 filling Methods 0.000 claims description 5
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- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000011358 absorbing material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
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- 229910004205 SiNX Inorganic materials 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention discloses a kind of low-temperature polysilicon silicon preparation method and microwave heating equipments.Wherein, the preparation method of the low temperature polycrystalline silicon includes: to provide a substrate；Amorphous silicon layer is formed in the side of the substrate；Microwave heating is carried out, is polysilicon layer by the amorphous silicon layer crystallization；Wherein, before the side of the substrate forms amorphous silicon layer, and/or, after the side of the substrate forms amorphous silicon layer and before carrying out microwave heating and being polysilicon layer by the amorphous silicon layer crystallization, further includes: form crystallization and induce film.Low-temperature polysilicon silicon preparation method and microwave heating equipment provided in an embodiment of the present invention, it is low to can solve conventional polysilicon annealing process crystallization homogeneity, technology difficulty is big, the low problem of product yield, polysilicon preparation temperature is effectively reduced, crystal grain is also more uniform, simultaneously, preparation process difficulty and equipment cost can be reduced, acquisition cost is lower, quality is higher and the higher polysilicon product of yield.
Description
Technical field
The present embodiments relate to the preparation methods and microwave of field of display technology more particularly to a kind of low temperature polycrystalline silicon to add
Hot equipment.
Background technique
With the development of display technology, liquid crystal display (Liquid Crystal Display, LCD) and organic light emission are aobvious
Show the flat display apparatus such as device (Organic Light Emitting Display, OLED) because having high image quality, power saving, fuselage
It is thin and the advantages that have a wide range of application, and it is widely used in mobile phone, TV, personal digital assistant, digital camera, notebook electricity
The various consumer electrical products such as brain, desktop computer, become the mainstream in display device.
In the display device of LCD and OLED, mostly use low temperature polycrystalline silicon (Low Temperature Poly-silicon,
LTPS backboard actuation techniques) are compared with current volume production using most amorphous silicon (a-Si) actuation techniques, electron mobility
100 times higher than amorphous silicon or more, more high-res, more high aperture, more narrow frame, the higher product of stability can be made.
Therefore, the development of LTPS technology receives extensive research and payes attention to.Currently, the common LTPS technology of industry is excimer laser
(Excimer Laser Annel, the ELA) technology of annealing, wherein laser, optics and mechanical system are complicated, and equipment manufacturing cost is high
Expensive, standby redundancy is expensive, maintenance higher cost；In addition, ELA technology, which generates the laser of laser and optical element dimension, to be had
Limit, limits the size of laser beam, further limits production substrate size.It, can only be right also, since laser beam size is limited
Substrate is carried out by zone sequence crystallization, and so as to cause the crystallization of different zones, there are non-uniform situations, affects the matter of product
Amount, causes product defect rate higher.
Summary of the invention
The present invention provides the preparation method and microwave heating equipment of a kind of low temperature polycrystalline silicon, can reduce polysilicon preparation temperature
Degree, preparation process difficulty and equipment cost obtain the uniform polysilicon product of crystal grain.
In a first aspect, the embodiment of the invention provides a kind of low-temperature polysilicon silicon preparation methods, comprising:
One substrate is provided；
Amorphous silicon layer is formed in the side of the substrate；
Microwave heating is carried out, is polysilicon layer by the amorphous silicon layer crystallization；
Wherein, before the side of the substrate forms amorphous silicon layer, and/or, amorphous is formed in the side of the substrate
After silicon layer and before carrying out microwave heating and being polysilicon layer by the amorphous silicon layer crystallization, further includes:
It forms crystallization and induces film.
Optionally, after the side of the substrate forms amorphous silicon layer and microwave heating is being carried out by the amorphous silicon
Layer crystal turns to before polysilicon layer, further includes:
Form the first crystallization induction film；
Microwave heating is being carried out, by the amorphous silicon layer crystallization for after polysilicon layer further include:
By first crystallization induction film removal, and clean the polysilicon layer surface.
Optionally, it by first crystallization induction film removal, and cleans after the polysilicon layer surface, further includes:
The first protective layer is formed away from the side of the substrate in the polysilicon layer.
Optionally, after the polysilicon layer forms the first protective layer away from the side of the substrate, further includes:
Gate pattern is formed away from the side of the substrate in first protective layer；
It uses the gate pattern to carry out ion doping for mask plate, forms source region and drain region.
Optionally, before the side of the substrate forms amorphous silicon layer, further includes:
Buffer layer is formed in the side of the substrate.
Optionally, after a substrate is provided, further includes:
Gate pattern is formed in the substrate side；
The second protective layer is formed away from the side of the substrate in the gate pattern；
Microwave heating is being carried out, by the amorphous silicon layer crystallization for after polysilicon layer further include:
Ion doping is carried out to the polysilicon layer using mask plate and forms source region and drain region.
Optionally, before the side of the substrate forms amorphous silicon layer, further includes:
The second crystallization is formed in the side of the substrate and induces film, and the second crystallization induction film includes multiple crystallization inductions
Isolated island；
Buffer layer is formed away from the side of the substrate in second crystallization induction film；
Amorphous silicon layer is formed in the side of the substrate, comprising: is formed in the buffer layer away from the side of the substrate
Amorphous silicon layer；
After the amorphous silicon layer crystallization is polysilicon layer by progress microwave heating, further includes: in the amorphous silicon layer
Third protective layer is formed away from the side of the substrate；
Gate pattern is formed away from the side of the amorphous silicon layer in the third protective layer；
It uses the gate pattern to carry out ion doping for mask plate, forms source region and drain region；
Wherein, the multiple crystallization induction isolated island is located in the upright projection of the source region and drain region on the substrate.
Optionally, before the side of the substrate forms amorphous silicon layer, further includes:
Gate pattern is formed in the side of the substrate and the second crystallization induces film, and the second crystallization induction film includes more
A crystallization induces isolated island, the crystallization induction isolated island and the gate pattern same layer；
The 4th protective layer is formed away from the side of the substrate in the gate pattern and second crystallization induction film；
Forming amorphous silicon layer in the side of the substrate includes: to deviate from the side shape of the substrate in the 4th protective layer
At amorphous silicon layer；
After the amorphous silicon layer crystallization is polysilicon layer by progress microwave heating, further includes:
The 5th protective layer is formed away from the side of the substrate in the polysilicon layer；
Ion doping is carried out to the polysilicon layer using mask plate and forms source region and drain region.
Optionally, the crystallization induction film includes the mixing material or metal of metal material, metal oxide and silica
With the alloy material of silicon.
Optionally, microwave heating is carried out, before being polysilicon layer by the amorphous silicon layer crystallization, further includes:
The substrate is placed in vacuum environment or inert gas environment.
Optionally, microwave heating is carried out, is polysilicon layer by the amorphous silicon layer crystallization, comprising:
Emit microwave to the substrate with preset direction, heats the amorphous silicon layer, be more by the amorphous silicon layer crystallization
Crystal silicon layer；
Wherein, the range of the angle of the preset direction and the substrate is 60 °~90 °.
Optionally, carrying out microwave heating for the amorphous silicon layer crystallization is polysilicon layer, comprising:
It drives the substrate to rotate, while emitting microwave to the substrate, the amorphous silicon layer is heated, by the amorphous silicon
Layer crystal turns to polysilicon layer.
Second aspect, the embodiment of the invention also provides a kind of microwave heating equipments, for any using such as first aspect
The preparation method prepares low temperature polycrystalline silicon, comprising:
Microwave heating chamber, microwave generator and base plate carrying mechanism；
It is intracavitary that the base plate carrying mechanism is set to the microwave heating, and carrying includes amorphous in the base plate carrying mechanism
The substrate of silicon layer, the microwave generator emit microwave to the substrate comprising amorphous silicon layer.
Optionally, the microwave heating equipment further includes waveguide and Microwave emission plate；
Substrate of the Microwave emission plate face in the base plate carrying mechanism, the Microwave emission plate includes hollow cavity
And the side of substrate of the Microwave emission plate face in the base plate carrying mechanism is provided with multiple Microwave emission holes, it is described more
A Microwave emission hole is connected with the hollow cavity；
The waveguide includes first end and second end, and the first end is connected with the microwave generator, the waveguide
The second end of pipe is set in the microwave heating chamber；The second end of the waveguide is connected with the Microwave emission plate, described
Microwave generator is set to outside the microwave heating chamber；
The microwave that the microwave generator issues propagates to the Microwave emission hole through the waveguide, and by the microwave
Launch hole issues, and includes the substrate of amorphous silicon layer described in directive.
Optionally, the load plane of the Microwave emission hole and the base plate carrying mechanism is in default angle, described default
The range of angle is 60 °~90 °.
Optionally, the microwave heating equipment further includes the first rotation motor；The base plate carrying mechanism includes support frame
With the multiple supporting pins being set on support frame as described above, the multiple supporting pin is used to carry the base comprising amorphous silicon layer
Plate；Support frame as described above is connect with first rotation motor, and first rotation motor can drive the load carrier and institute
State the substrate rotation comprising amorphous silicon layer of supporting pin support；
The microwave generator is fixedly installed below support frame as described above；Or the microwave generator is set to the support
Above frame, support frame as described above is connect by retarder with the microwave generator, and the retarder is when support frame as described above rotates
The microwave generator and support frame as described above is set to generate rotational speed difference.
Optionally, the microwave heating equipment further includes linear motor and fixed structure, and the fixed structure includes flexible
Axis and the permutation pin connecting with the telescopic shaft both ends, the telescopic shaft are connect with the linear motor, and the linear motor drives
The telescopic shaft is moved to stretch so that the permutation pin discharges and grip the substrate comprising amorphous silicon layer；
The linear motor and the fixed structure are fixedly installed on support frame as described above, the linear motor and described solid
Determining structure can rotate with support frame as described above.
Optionally, the microwave heating equipment further includes the second rotation motor, second rotation motor and the microwave
Generator connection, second rotation motor can drive the microwave generator to rotate；
The base plate carrying mechanism includes multiple supporting pins, and the microwave heating is fixed in one end of the multiple supporting pin
Cavity bottom, the other end of the multiple supporting pin can carry the substrate comprising amorphous silicon layer.
Optionally, the microwave heating equipment further includes vaccum-pumping equipment and/or inert gas filling equipment and gas
Pipeline, the gas pipeline are connected to the microwave heating chamber and the vaccum-pumping equipment or the microwave heating chamber and the inertia
Gas recyclers and gas handling equipment.
Optionally, the inner wall of the microwave heating chamber is provided with microwave absorbing material layer.
The present invention by the side of substrate formed amorphous silicon layer before, and/or, substrate side formed amorphous silicon layer
Later and before carrying out microwave heating and being polysilicon layer by amorphous silicon layer crystallization, forms crystallization and induce film, lured using crystallization
Guided membrane generates nucleus, and in conjunction with microwave heating, is evenly heated amorphous silicon layer inside and outside, realizes under low-temperature condition quickly
Crystallization forms the uniform polysilicon layer of crystal grain, and low-temperature polysilicon silicon preparation method and microwave heating equipment provided by the invention can be with
Solution conventional polysilicon annealing process crystallization homogeneity is low, and technology difficulty is big, the low problem of product yield, makes polysilicon preparation temperature
Degree is effectively reduced, and crystal grain is also more uniform, meanwhile, it can reduce preparation process difficulty and equipment cost, obtain that cost is lower, product
Matter is higher and the higher polysilicon product of yield.
Detailed description of the invention
Fig. 1 is a kind of flow chart for low-temperature polysilicon silicon preparation method that the embodiment of the present invention one provides；
Fig. 2 is the structure flow chart of low-temperature polysilicon silicon preparation method shown in Fig. 1；
Fig. 3 is the flow chart for another low-temperature polysilicon silicon preparation method that the embodiment of the present invention one provides；
Fig. 4 is the structure flow chart of low-temperature polysilicon silicon preparation method shown in Fig. 3；
Fig. 5 is the flow chart of the preparation method for another low temperature polycrystalline silicon that the embodiment of the present invention one provides；
Fig. 6 is the structure flow chart of the preparation method of low temperature polycrystalline silicon shown in Fig. 5；
Fig. 7 is a kind of flow chart of the preparation method of low temperature polycrystalline silicon provided by Embodiment 2 of the present invention；
Fig. 8 is the structure flow chart of the preparation method of low temperature polycrystalline silicon shown in figure；
Fig. 9 is the flow chart of the preparation method of another low temperature polycrystalline silicon provided by Embodiment 2 of the present invention；
Figure 10 is the structure flow chart of the preparation method of low temperature polycrystalline silicon shown in Fig. 9；
Figure 11 is a kind of structural schematic diagram for microwave heating equipment that the embodiment of the present invention three provides；
Figure 12 is the structural schematic diagram for having a kind of microwave heating equipment that the embodiment of the present invention three provides；
Figure 13 is a kind of top view of Microwave emission plate provided in an embodiment of the present invention；
Figure 14 is the structural schematic diagram of another microwave heating equipment provided in an embodiment of the present invention；
Figure 15 is the structural schematic diagram for the microwave heating equipment that the embodiment of the present invention four provides；
Figure 16 is the structural schematic diagram for another microwave heating equipment that the embodiment of the present invention four provides.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Fig. 1 is a kind of flow chart for low-temperature polysilicon silicon preparation method that the embodiment of the present invention one provides, and Fig. 2 is shown in Fig. 1
The structure flow chart of low-temperature polysilicon silicon preparation method, with reference to Fig. 1 and Fig. 2, the preparation method of the low temperature polycrystalline silicon includes:
S110, a substrate 11 is provided；
A) the figure of corresponding diagram 2, substrate 11 can be rigid substrates, such as glass substrate etc. can also be flexible base board, such as adopt
The substrate made of the flexible materials such as polyimides.Substrate 11 before the use, needs to carry out surface clean, on the one hand for going
Except impurity, it on the one hand can guarantee the cohesive force for the film layer and substrate being formed on.
S120, amorphous silicon layer 121 is formed in the side of substrate 11；
Corresponding b) figure shown in Fig. 2, amorphous silicon layer 121 can be formed by vapor deposition, specifically, can using etc. from
Chemical vapour deposition technique (Plasma Enhanced Chemical Vapor Deposition, the PECVD) deposition of daughter enhancing
Amorphous silicon membrane is formed, the thickness of amorphous silicon layer 121 may be provided at In the range of.
S130, the first crystallization induction film 131 is formed away from the side of substrate 11 in amorphous silicon layer 121；
With reference to the c of Fig. 2) figure, wherein crystallization induction film generallys use metal material or the metalliferous material of packet is made,
In metallic atom can reduce the phase transition energy that amorphous silicon changes to polysilicon, and with the silicon atom knot in amorphous silicon layer 121
Close the nucleus for being formed and facilitating amorphous silicon crystallization.Crystallization induction film equally can be formed in amorphous silicon layer by the way of deposition
On 121, the first crystallization induction film 131 is the flood structure for covering amorphous silicon layer 121, and crystallization induces the thickness of film 131 settable
?In the range of.
S140, microwave heating is carried out, is polysilicon layer 122 by 121 crystallization of amorphous silicon layer；
By the way of microwave heating, can use microwave can penetrate the film layers such as nonmetallic substrate, make microwave action in
Amorphous silicon layer 121, and guarantee the inside of amorphous silicon layer 121 and surface while heating, promote amorphous silicon to surround nucleus by heating
Crystallization is grown, polysilicon layer 122 is ultimately formed.Wherein, help the crystalline substance of amorphous crystallization of silicon since crystallization induction film could be formed with
Core, and the mode that microwave heating anneals to amorphous silicon are internally transmitted without 121 surface heat of amorphous silicon layer, thus
121 crystallization of amorphous silicon layer is that the crystallization temperature of polysilicon layer 122 can relative reduction.The microwave wavelength of microwave heating is generally 1mm
~1m, but be not limited to using this wavelength period, as long as wave-length coverage that is quick, being evenly heated entire amorphous silicon can be realized.
The embodiment of the present invention one provide low-temperature polysilicon silicon preparation method, by the side of substrate formed amorphous silicon layer it
Afterwards and before carrying out microwave heating and being polysilicon layer by amorphous silicon layer crystallization, forms crystallization and induce film, induced using crystallization
Film generates nucleus, and in conjunction with microwave heating, is evenly heated amorphous silicon layer inside and outside, realizes quickly brilliant under low-temperature condition
Change forms the uniform polysilicon layer of crystal grain, solves that conventional polysilicon annealing process crystallization homogeneity is low, and technology difficulty is big, product
The low problem of yield, is effectively reduced polysilicon preparation temperature, and crystal grain is also more uniform, meanwhile, preparation process hardly possible can be reduced
Degree and equipment cost, acquisition cost is lower, quality is higher and the higher polysilicon product of yield.It is further to note that this
The preparation method that inventive embodiments provide promotes the nucleus of amorphous silicon layer crystallization because generating using crystallization induction film, and brilliant in setting
Change and utilize microwave heating on the basis of inducing film, interior external heat is more uniform when heating amorphous silicon layer, compared to conventional method
Middle heating temperature need to be at least up to 500 ° of high temperature, can reduce the heating temperature that amorphous silicon heating crystallization is polysilicon, and
100 DEG C of heating temperature can be at least reduced, the temperature range of heating crystallization is between 300 DEG C~400 DEG C.
Wherein, optionally, the mixing material or gold of metal material, metal oxide and silica can be used in crystallization induction film
Belong to and being made with the alloy material of silicon.Specifically, metal material may include aluminium, nickel, molybdenum, copper, gold and silver etc., wherein metal material
It is typically chosen nickel as crystallization induction film, because the lattice match of nickel and silicon is higher, the interface shape of nickel and amorphous silicon can be made
Nucleus is formed at interface at the silicide of nisiloy, and with the silicide of the nickel, amorphous silicon is promoted to be converted into crystalline state.Metal oxidation
The mixing material of object and silica can be nickel oxide and the mixing material of silica etc., and the alloy material of metal and silicon can be
Aluminium silicon or nickel silicon alloy etc..
Optionally, amorphous silicon layer is being subjected to microwave heating, crystallization needs this having amorphous silicon as before polysilicon
The substrate of layer is placed in vacuum environment or inert gas environment, on the one hand for avoiding the particles such as dust from being deposited on amorphous silicon table
On the other hand face pollutes prevented also from air and steam etc. and corrodes the amorphous silicon, influences the performance of polycrystalline silicon device.Wherein,
Inert gas may be selected by Ar, He, N2One or more of gas.
Further, in order to preferably carry out microwave heating, keep amorphous silicon layer more uniform in microwave heating, can adjust
Launch angle of the microwave to substrate is saved, optionally, the angle in direction and substrate to substrate transmitting microwave should be at 60 °~90 °
In range.In addition, can be revolved in order to which the microwave energy for guaranteeing that the different zones of amorphous silicon layer on substrate are subject to is identical with drive substrate
Turn, while emitting microwave to substrate, heat amorphous silicon layer, is polysilicon layer by amorphous silicon layer crystallization.Obviously, by adjusting microwave
To the launch angle of substrate, microwave can be made to carry out multiple reflections between each film layer on substrate, to make full use of microwave energy
Amount, and heat amorphous silicon layer each region on substrate can, meanwhile, substrate is rotated, amorphous silicon can be made
The received microwave of different zones of layer is more uniform, to obtain the polysilicon layer more uniformed by microwave heating.
Wherein, the preparation method of Fig. 1 and low temperature polycrystalline silicon shown in Fig. 2 only diagrammatically shows crucial several steps
Suddenly, the embodiment of the present invention one additionally provides the preparation method of more detailed low temperature polycrystalline silicon, and Fig. 3 is that the embodiment of the present invention one mentions
The flow chart of another low-temperature polysilicon silicon preparation method supplied, Fig. 4 is the Structure and Process of low-temperature polysilicon silicon preparation method shown in Fig. 3
Figure, with reference to Fig. 3 and Fig. 4, the preparation method of the low temperature polycrystalline silicon includes:
S210, a substrate 11 is provided；
S220, buffer layer 14 is formed in the side of substrate 11；
Wherein, buffer layer 14 is formed on substrate 11 prior to amorphous silicon layer 121, and amorphous silicon layer 121 is then being deposited shape
When on buffer layer 14, the adhesion strength of amorphous silicon layer 121 Yu substrate 11 can be increased, better ensure that the film forming of amorphous silicon
Property.Buffer layer 14 can be by SiO2、SiNxIt is formed Deng one or more layers combination of materials, the thickness of buffer layer 14 may be provided atIn range.
S230, amorphous silicon layer 121 is formed away from the side of substrate 11 in buffer layer 14；
S240, the first crystallization induction film 131 is formed away from the side of substrate 11 in amorphous silicon layer 121；
S250, microwave heating is carried out, is polysilicon layer 122 by 121 crystallization of amorphous silicon layer；
S260, the first crystallization induction film 131 is removed, and cleans 122 surface of polysilicon layer；
Wherein, the first crystallization induction film 131 is after promoting amorphous silicon layer crystallization to be polysilicon layer 122, itself is due to depositing
In metal material, therefore have certain electric conductivity, and for the polycrystalline silicon substrate, which induces film 131 can be to polycrystalline
Silicon device has an impact, therefore needs to remove first crystallization induction film 131.In addition, crystallization induces film promoting amorphous silicon layer
For 121 crystallization to may result in and diffuse into a small amount of metallic atom in polysilicon layer 122 after polysilicon layer 122, a small amount of metal is former
Son may also have an impact polycrystalline silicon device, therefore can carry out after removing the first crystallization induction film 131 to polysilicon layer 122
Quarter is spent, crossing the thickness carved should beSo that it is guaranteed that the purity and surface cleanliness of polysilicon 122.
S270, the first protective layer 151 is formed away from the side of substrate 11 in polysilicon layer 122；
First protective layer 151 is made of insulating material, such as SiO2、SiNxIt forms, is used for Deng one or more layers combination of materials
Protection polysilicon layer 122 completely cuts off the grid and polysilicon layer 122 prepared thereon simultaneously, and grid and polysilicon layer 122 is made to insulate, the
The thickness range of one protective layer 151 is
S280, gate pattern 16 is formed away from the side of substrate 11 in the first protective layer 151；
Grid generallys use the good conductor materials such as metal material and is made, illustratively, can be aluminium, aluminium alloy, molybdenum, copper,
One or more layers equal metal of silver or nonmetallic materials are composed, and thickness can beIn the range of.Grid
The formation of pattern 16 usually can first prepare one layer of grid layer, then be patterned by etching technics, or directly adopt and have
The mask plate of mask pattern deposits to be formed, herein with no restrictions.
S290, it uses gate pattern 16 to carry out ion doping for mask plate, forms source region 1221 and drain region 1222.
Wherein, ion doping is the impurity ionization that will adulterate into ion, and is focused into ion beam, accelerates in the electric field and obtains
After obtaining high kinetic energy, it is injected into polysilicon layer 122 and realizes doping.
In embodiment picture 1-4, the structure of polycrystalline silicon device is top gate type, i.e., gate pattern is arranged in source region and leakage
On area, and optionally, bottom grating structure can also be set by the polycrystalline silicon device.Therefore, the embodiment of the present invention one also provides
A kind of preparation method of low temperature polycrystalline silicon, Fig. 5 are the preparation sides for another low temperature polycrystalline silicon that the embodiment of the present invention one provides
The flow chart of method, Fig. 6 are the structure flow charts of the preparation method of low temperature polycrystalline silicon shown in Fig. 5, and with reference to Fig. 5 and Fig. 6, the low temperature is more
The preparation method of crystal silicon includes:
S310, a substrate 11 is provided；
S320, gate pattern 16 is formed in 11 side of substrate；
Likewise, the gate pattern 16 needs first to deposit the grid layer to form flood, exposure, development, quarter then can be passed through
The processes such as erosion, removing complete gate pattern.
S330, the second protective layer 152 is formed away from the side of substrate 11 in gate pattern 15；
The material of second protective layer 152 and the first protective layer 151 is insulating materials, can be all made of SiO2、SiNxDeng one layer
Or multilayer material is composed, details are not described herein again.
S340, amorphous silicon layer 121 is formed away from the side of substrate 11 in the second protective layer 152；
S350, the first crystallization induction film 131 is formed away from the side of substrate 11 in amorphous silicon layer 121；
S360, microwave heating is carried out, is polysilicon layer 122 by 121 crystallization of amorphous silicon layer；
S370, the first crystallization induction film 131 is removed, and cleans 122 surface of polysilicon layer；
S380, the first protective layer 151 is formed away from the side of substrate 11 in polysilicon layer 122；
S390, ion doping formation source region 1221 and drain region 1222 are carried out to polysilicon layer 122 using mask plate.
Herein it should be noted that then needing to use mask plate to more when carrying out ion doping to polysilicon layer 122
Different zones on crystal silicon layer 122 carry out patterning ground ion doping, form source region and drain region with the position in corresponding grid, from
And thin film transistor (TFT) is formed with grid.The thin film transistor (TFT) formed at this time is bottom since grid is located under source region and drain region
Gate type thin film transistor.
Embodiment two
It can be disposed at the top of amorphous silicon layer for crystallization induction film, it can also be formed prior to amorphous silicon layer
On substrate, then amorphous silicon layer is formed on crystallization induction film, makes amorphous silicon when passing through microwave heating, can induce
Amorphous silicon rapid crystallization forms polysilicon.However when for the top of amorphous silicon layer is arranged in crystallization induction film, it can pass through
Microwave heating, after making amorphous crystallization of silicon polysilicon, by crystallization induction film removal, to avoid crystallization induction film to polycrystalline silicon device
Influence, and for the lower section of amorphous silicon layer is arranged in crystallization induction film, second embodiment of the present invention provides a kind of low temperature is more
The preparation method of crystal silicon, Fig. 7 are a kind of flow chart of the preparation method of low temperature polycrystalline silicon provided by Embodiment 2 of the present invention, Fig. 8
It is the structure flow chart of the preparation method of low temperature polycrystalline silicon shown in figure, with reference to Fig. 7 and Fig. 8, which includes:
S410, a substrate 11 is provided；
S420, the second crystallization induction film 132 is formed in the side of substrate 11, it includes multiple crystalline substances that the second crystallization, which induces film 132,
Change induction isolated island 1321；
Wherein the second crystallization induction film 132 equally using metal material, metal oxide and silica mixing material or
The alloy material of metal and silicon is formed, and is seldom repeated herein, in embodiment one the first crystallization induction film the difference is that,
It is not that the crystallization of flood induces film layer, but is made of multiple crystallization induction isolated island 1321 that second crystallization, which induces film 132, and crystallization lures
Nucleus can equally be generated by leading the interface that isolated island 1321 is contacted with amorphous silicon, peomote the crystallization of amorphous silicon.
S430, buffer layer 14 is formed away from the side of substrate 11 in the second crystallization induction film 132；
S440, amorphous silicon layer 121 is formed away from the side of substrate 11 in buffer layer 14；
S450, microwave heating is carried out, is polysilicon layer 122 by 121 crystallization of amorphous silicon layer；
S460, third protective layer 153 is formed away from the side of substrate 11 in polysilicon layer 122；
S470, gate pattern 16 is formed away from the side of polysilicon layer 122 in third protective layer 153；
S480, it uses gate pattern 16 to carry out ion doping for mask plate, forms source region 1221 and drain region 1222；Wherein,
Multiple crystallization induction isolated islands 1321 are located in the upright projection of source region 1221 and drain region 1222 on the substrate 11.
It should be noted that the setting position of the crystallization induction isolated island 1321 in the second crystallization induction film 132 is depending on more
The position of the source region 1221 and drain region 1222 that are formed in crystal silicon layer 122, crystallization induce in isolated island 1321 due to there are metallic atom,
And using diffusing into amorphous silicon layer 121 for metallic atom, to promote the crystallization of amorphous silicon, but when metallic atom diffuses into
After entering the channel region in source region 1221 and drain region 1222, the carrier balance of channel region will affect, and it is certain to there is channel region
Electric conductivity, affect the normal work of channel region.It therefore, can be under channel region when crystallization induction isolated island 1321 is arranged
Side is not provided with crystallization induction film, namely crystallization induction orphan is only formed below the source region 1221 of polysilicon layer 122 and drain region 1222
Island 1321, while realizing crystallization induction, limit metallic atom diffuses into channel region.
Similarly, for the polycrystalline silicon device of bottom gate type, the embodiment of the present invention two additionally provides a kind of low temperature polycrystalline silicon
Preparation method, Fig. 9 are the flow charts of the preparation method of another low temperature polycrystalline silicon provided by Embodiment 2 of the present invention, and Figure 10 is figure
The structure flow chart of the preparation method of low temperature polycrystalline silicon shown in 9, with reference to Fig. 9 and Figure 10, the preparation method of the low temperature polycrystalline silicon
Include:
S510, a substrate 11 is provided；
S520, gate pattern 16 and the second crystallization induction film 132 are formed in the side of substrate 11, the second crystallization induces film
132 include that multiple crystallization induce isolated island 1321, and crystallization induces isolated island 1321 and 16 same layer of gate pattern；
Since crystallization induction isolated island 1321 needs to be arranged in the source region of polysilicon layer 122 and the lower section in drain region, it is corresponding
Ground, crystallization induce the grid in isolated island 1321 and gate pattern 16 to need same layer but insulation set, i.e. grid in gate pattern 16
It is in a discrete distribution as shown in Figure 10 with the crystallization induction isolated island 1321 in the second crystallization induction film 132.
S530, the 4th protective layer is formed away from the side of substrate 11 in gate pattern 16 and the second crystallization induction film 132
154；
S540, amorphous silicon layer 121 is formed away from the side of substrate 11 in the 4th protective layer 154；
S550, microwave heating is carried out, is polysilicon layer 122 by 121 crystallization of amorphous silicon layer；
S560, the 5th protective layer 155 is formed away from the side of substrate 11 in polysilicon layer 122；
S570, ion doping formation source region 1221 and drain region 1222 are carried out to polysilicon layer 122 using mask plate.
Embodiment three
The embodiment of the present invention three provides a kind of microwave heating equipment, for using in the embodiment of the present invention one or two
Preparation method prepares low temperature polycrystalline silicon, and Figure 11 is a kind of structural representation for microwave heating equipment that the embodiment of the present invention three provides
Figure, with reference to Figure 11, which includes:
Microwave heating chamber 21, microwave generator 22 and base plate carrying mechanism 23；Base plate carrying mechanism 23 is set to microwave and adds
In hot chamber 21, carrying includes the substrate 11 of amorphous silicon layer in base plate carrying mechanism 23, and microwave generator 22 is to including amorphous silicon layer
Substrate 11 emit microwave.
Wherein, base plate carrying mechanism 23 is illustratively supported by the bottom of the microwave heating chamber 21, at this time includes amorphous silicon
The substrate 11 of layer is placed in the base plate carrying mechanism 23, and crystallization induction film is located at amorphous silicon layer away from microwave generator 22
Side, at this point, since microwave cannot penetrate metal material, therefore metal material present in crystallization induction film can with microwave reflection,
Act on microwave more on amorphous silicon layer, to make full use of microwave to heat amorphous silicon layer.21 material of microwave heating chamber
Matter needs the material using microwave reflection, and base plate carrying mechanism 23 is not limited to supporting pin as shown in the figure, is also possible to hold
The modes such as carried base board.In the same manner, the material that can make microwave penetration, such as plastics etc. can be used in base plate carrying mechanism 23.Microwave hair
The microwave wavelength that raw device 22 emits is generally 1mm~1m, but microwave generator is not limited to using this wave band, as long as can realize fast
Speed, the wave-length coverage for being evenly heated entire amorphous silicon.
The embodiment of the present invention three provides a kind of microwave heating equipment, before the side of substrate forms amorphous silicon layer, and/
Or, substrate side formed amorphous silicon layer after and carry out microwave heating by amorphous silicon layer crystallization be polysilicon layer it
Before, it forms crystallization and induces film, generate nucleus using crystallization induction film, include then amorphous silicon layer to this by microwave heating equipment
Underlay substrate carry out microwave heating, induce film and microwave heating to combine by crystallization, be evenly heated amorphous silicon layer inside and outside,
Realize that rapid crystallization forms the uniform polysilicon layer of crystal grain, low-temperature polysilicon silicon preparation method provided by the invention under low-temperature condition
And microwave heating equipment, it can solve that conventional polysilicon annealing process crystallization homogeneity is low, and technology difficulty is big, and product yield is low
Polysilicon preparation temperature is effectively reduced in problem, and crystal grain is also more uniform, meanwhile, preparation process difficulty and equipment can be reduced
Cost, acquisition cost is lower, quality is higher and the higher polysilicon product of yield.
Optionally, the inner wall of microwave heating chamber 21 can be avoided by setting microwave absorbing material layer by microwave heating chamber 21
The microwave of reflection carries out microwave heating to amorphous silicon layer on substrate, and influences the uniformity of amorphous silicon layer microwave heating.More into one
Step ground, in order to avoid there are dust impurity and being avoided in microwave heating, the base comprising amorphous silicon layer in microwave heating chamber 21
Pollution and corrosion of the plate 11 by air or steam, the also settable vaccum-pumping equipment of the microwave heating equipment and/or inert gas
Filling equipment and gas pipeline, gas pipeline are connected to microwave heating chamber and vaccum-pumping equipment or microwave heating chamber and inert gas
Filling equipment.Before the substrate that will include amorphous silicon layer carries out microwave heating, need to vacuumize the microwave heating chamber
Operation, the intracavitary air of microwave heating and moisture content are reduced to preset standard, then can be passed through inert gas to substrate into
Row protection, naturally it is also possible to further decrease the intracavitary air of microwave heating and steam contains by repeatedly vacuumizing with inflatable body
Amount, those skilled in the art can operate according to actual needs, and details are not described herein again.
Microwave generator 22 is illustratively placed in the bottom middle position of microwave heating chamber 21, the microwave of transmitting by Figure 11
It can be projected towards substrate 11, to be heated to the amorphous silicon layer on substrate 11.But the microwave generator 22 is to substrate 11
Different location transmitting microwave direction it is not consistent, therefore can exist to the effect of the amorphous silicon layer microwave heating on substrate 11 it is poor
Different, therefore, the embodiment of the present invention three additionally provides a kind of microwave heating equipment, Figure 12 be the embodiment of the present invention three provide have one
The structural schematic diagram of kind microwave heating equipment, with reference to Figure 12, which further includes waveguide 24 and Microwave emission plate
25；Microwave emission plate 25 is towards the substrate in base plate carrying mechanism 23, and Microwave emission plate 25 includes hollow cavity 251 and microwave is sent out
It penetrates plate 25 and the side of the substrate 11 in base plate carrying mechanism 23 is provided with multiple Microwave emission holes 252, multiple Microwave emissions
Hole 252 and hollow cavity 251 are connected；Waveguide 24 includes first end and second end, and first end is connected with microwave generator 22, wave
The second end of conduit 24 is set in microwave heating chamber 21；The second end of waveguide 24 is connected with Microwave emission plate 25, microwave hair
Raw device 22 is set to outside microwave heating chamber 21；The microwave that microwave generator 22 issues propagates to Microwave emission hole through waveguide 24
252, and issued by Microwave emission hole 252, directive includes the substrate 11 of amorphous silicon layer.
Figure 13 is a kind of top view of Microwave emission plate provided in an embodiment of the present invention, exemplary with reference to Figure 12 and Figure 13
Ground, Figure 13 show the set-up mode in Microwave emission hole 252 on Microwave emission plate 25, utilize equally distributed Microwave emission hole
252 can carry out equably microwave heating to the substrate 11 comprising amorphous silicon layer in base plate carrying mechanism 23, certainly, microwave hair
The arrangement mode of perforation 252 is not limited to as shown in figure 13, those skilled in the art can on the basis of disclosed by the embodiments of the present invention,
Carry out reasonable design.Optionally, the embodiment of the invention also provides a kind of microwave heating equipment, Figure 14 is the embodiment of the present invention
The structural schematic diagram of another microwave heating equipment of offer, with reference to Figure 13 and Figure 14, wherein Microwave emission hole 252 and substrate
The load plane of load carrier 23 is in default angle α, and the range for presetting angle α is 60 °~90 °.Wherein, Microwave emission hole 252
There are angles with substrate 11 for setting, it is ensured that the direction of the microwave of transmitting and substrate are in a certain angle, on the one hand can make micro-
Wave is reflected in the film layer on substrate, and microwave is made full use of to heat amorphous silicon layer, on the other hand, can be by setting
Angle setting degree, avoids microwave from being blocked when propagating to amorphous silicon layer, can make the amorphous silicon layer of each position on substrate that can connect
Microwave is received to be heated.It is further to note that the tilt angle in the Microwave emission hole 252 on Microwave emission plate 25 can one
It causes, can also be designed according to the position in specific Microwave emission hole 252, so that the microwave of transmitting more uniformly propagates to substrate
On.
Example IV
The embodiment of the present invention four provides another microwave and adds for how more uniformly to carry out microwave heating to substrate
Hot equipment, Figure 15 is the structural schematic diagram for the microwave heating equipment that the embodiment of the present invention four provides, with reference to Figure 15, the microwave heating
Equipment further includes the first rotation motor 261；Base plate carrying mechanism 23 includes support frame 231 and is set to more on support frame 231
A supporting pin 232, multiple supporting pins 232 are for carrying the substrate 11 comprising amorphous silicon layer；Support frame 231 and the first rotation motor
261 connections, the substrate comprising amorphous silicon layer that the first rotation motor 261 can drive load carrier 23 and supporting pin 232 to support
11 rotations；Microwave generator 22 is fixedly installed on 231 lower section of support frame；Or microwave generator 22 is set to 231 top of support frame,
Support frame 231 is connect by retarder 27 with microwave generator 22, and retarder 27 makes microwave generator when support frame 231 rotates
22 generate rotational speed difference with support frame 231.
The microwave energy that the different zones of the amorphous silicon layer on fixed substrate are subject in order to prevent is different, the present invention
The microwave heating equipment that example IV provides is rotated using the first rotation motor 261 driving support frame 231, to drive support frame
Substrate 11 and microwave generator 22 on 231, and in order to which substrate and microwave generator 22 are generated rotational speed difference, microwave is occurred
Device 22 is connect by retarder 27 with support frame 231, so that microwave generator 22 and substrate 11 be generated centainly when rotated
Relative rotation thereby may be ensured that the microwave energy that region different on substrate 11 is subject to is identical and uniform, so as to more preferable
Ground is under the induction of crystallization induction film, heating crystallization amorphous silicon layer.
Optionally, 5 are continued to refer to figure 1, which further includes linear motor 28 and fixed structure 29, fixed knot
Structure 29 includes telescopic shaft 291 and the permutation pin 292 connecting with 291 both ends of telescopic shaft, and telescopic shaft 291 is connect with linear motor 28,
Linear motor 28 drives telescopic shaft 291 flexible so that permutation pin 292 discharges and grip the substrate 11 comprising amorphous silicon layer；Line
Property motor 28 and fixed structure 29 are fixedly installed on support frame 231, and linear motor 28 and fixed structure 29 can be revolved with support frame
Turn.
By the way that linear motor 28 and fixed structure 29 are arranged on support frame 231, it can prevent substrate 11 from rotating Shi Congzhi
It falls off on support pin 232, can further prevent from influencing to add the microwave of substrate with relative displacement is generated in supporting pin 232
The uniformity of heat.
The embodiment of the present invention four additionally provides a kind of microwave heating equipment, and Figure 16 is the another of the offer of the embodiment of the present invention four
The structural schematic diagram of kind microwave heating equipment further includes the second rotation motor 262 in the microwave heating equipment with reference to Figure 16, the
Two rotation motors 262 are connect with microwave generator 22, and the second rotation motor 262 can drive microwave generator 22 to rotate；Substrate is held
Mounted mechanism 23 includes multiple supporting pins, and microwave heating cavity bottom 21, multiple supporting pins are fixed in one end of multiple supporting pins 232
232 other end can carry the substrate 11 comprising amorphous silicon layer.By the way that microwave generator 22 is rotated, it is ensured that microwave occurs
The microwave that device 22 emits is the microwave of real-time change transmitting, and the received microwave of substrate 11 is not the microwave of fixed transmission at this time, because
And can guarantee that the different zones of the amorphous silicon layer on substrate 11 can equably receive microwave heating, guarantee the uniform of crystallization
Property.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (20)
1. a kind of low-temperature polysilicon silicon preparation method characterized by comprising
One substrate is provided；
Amorphous silicon layer is formed in the side of the substrate；
Microwave heating is carried out, is polysilicon layer by the amorphous silicon layer crystallization；
Wherein, before the side of the substrate forms amorphous silicon layer, and/or, amorphous silicon layer is formed in the side of the substrate
Later and before carrying out microwave heating and being polysilicon layer by the amorphous silicon layer crystallization, further includes:
It forms crystallization and induces film.
2. preparation method according to claim 1, which is characterized in that after the side of the substrate forms amorphous silicon layer
And before carrying out microwave heating and being polysilicon layer by the amorphous silicon layer crystallization, further includes:
Form the first crystallization induction film；
Microwave heating is being carried out, by the amorphous silicon layer crystallization for after polysilicon layer further include:
By first crystallization induction film removal, and clean the polysilicon layer surface.
3. preparation method according to claim 2, which is characterized in that by first crystallization induction film removal, and clean
After the polysilicon layer surface, further includes:
The first protective layer is formed away from the side of the substrate in the polysilicon layer.
4. preparation method according to claim 3, which is characterized in that deviate from the side of the substrate in the polysilicon layer
It is formed after the first protective layer, further includes:
Gate pattern is formed away from the side of the substrate in first protective layer；
It uses the gate pattern to carry out ion doping for mask plate, forms source region and drain region.
5. the preparation method according to claim 4, which is characterized in that the substrate side formed amorphous silicon layer it
Before, further includes:
Buffer layer is formed in the side of the substrate.
6. preparation method according to claim 3, which is characterized in that after one substrate of offer, further includes:
Gate pattern is formed in the substrate side；
The second protective layer is formed away from the side of the substrate in the gate pattern；
Microwave heating is being carried out, by the amorphous silicon layer crystallization for after polysilicon layer further include:
Ion doping is carried out to the polysilicon layer using mask plate and forms source region and drain region.
7. preparation method according to claim 1, which is characterized in that the substrate side formed amorphous silicon layer it
Before, further includes:
The second crystallization is formed in the side of the substrate and induces film, and the second crystallization induction film includes that multiple crystallization inductions are lonely
Island；
Buffer layer is formed away from the side of the substrate in second crystallization induction film；
Amorphous silicon layer is formed in the side of the substrate, comprising: forms amorphous away from the side of the substrate in the buffer layer
Silicon layer；
After the amorphous silicon layer crystallization is polysilicon layer by progress microwave heating, further includes: deviate from the amorphous silicon layer
The side of the substrate forms third protective layer；
Gate pattern is formed away from the side of the amorphous silicon layer in the third protective layer；
It uses the gate pattern to carry out ion doping for mask plate, forms source region and drain region；
Wherein, the multiple crystallization induction isolated island is located in the upright projection of the source region and drain region on the substrate.
8. preparation method according to claim 1, which is characterized in that the substrate side formed amorphous silicon layer it
Before, further includes:
Gate pattern is formed in the side of the substrate and the second crystallization induces film, and the second crystallization induction film includes multiple crystalline substances
Change induction isolated island, the crystallization induction isolated island and the gate pattern same layer；
The 4th protective layer is formed away from the side of the substrate in the gate pattern and second crystallization induction film；
The substrate side formed amorphous silicon layer include: the 4th protective layer away from the substrate side formed it is non-
Crystal silicon layer；
After the amorphous silicon layer crystallization is polysilicon layer by progress microwave heating, further includes:
The 5th protective layer is formed away from the side of the substrate in the polysilicon layer；
Ion doping is carried out to the polysilicon layer using mask plate and forms source region and drain region.
9. -8 any preparation method according to claim 1, which is characterized in that the crystallization induction film includes metal material
The alloy material of material, the mixing material or metal of metal oxide and silica and silicon.
10. preparation method according to claim 1 to 8, which is characterized in that microwave heating is carried out, it will be described non-
Before crystal silicon layer crystallization is polysilicon layer, further includes:
The substrate is placed in vacuum environment or inert gas environment.
11. preparation method according to claim 1 to 8, which is characterized in that microwave heating is carried out, it will be described non-
Crystal silicon layer crystallization is polysilicon layer, comprising:
Emit microwave to the substrate with preset direction, heat the amorphous silicon layer, is polysilicon by the amorphous silicon layer crystallization
Layer；
Wherein, the range of the angle of the preset direction and the substrate is 60 °~90 °.
12. preparation method according to claim 1 to 8, which is characterized in that carrying out microwave heating will be described non-
Crystal silicon layer crystallization is polysilicon layer, comprising:
It drives the substrate to rotate, while emitting microwave to the substrate, the amorphous silicon layer is heated, by the amorphous silicon layer crystal
Turn to polysilicon layer.
13. a kind of microwave heating equipment, which is characterized in that for using preparation method system as claimed in claim 1
Standby low temperature polycrystalline silicon, comprising:
Microwave heating chamber, microwave generator and base plate carrying mechanism；
It is intracavitary that the base plate carrying mechanism is set to the microwave heating, and carrying includes amorphous silicon layer in the base plate carrying mechanism
Substrate, the microwave generator emits microwave to the substrate comprising amorphous silicon layer.
14. microwave heating equipment according to claim 13, which is characterized in that the microwave heating equipment further includes waveguide
Pipe and Microwave emission plate；
Substrate of the Microwave emission plate face in the base plate carrying mechanism, the Microwave emission plate include hollow cavity and institute
The side for stating substrate of the Microwave emission plate face in the base plate carrying mechanism is provided with multiple Microwave emission holes, the multiple micro-
Wave launch hole is connected with the hollow cavity；
The waveguide includes first end and second end, and the first end is connected with the microwave generator, the waveguide
Second end is set in the microwave heating chamber；The second end of the waveguide is connected with the Microwave emission plate, the microwave
Generator is set to outside the microwave heating chamber；
The microwave that the microwave generator issues propagates to the Microwave emission hole through the waveguide, and by the Microwave emission
Hole issues, and includes the substrate of amorphous silicon layer described in directive.
15. microwave heating equipment according to claim 14, which is characterized in that held with the substrate in the Microwave emission hole
The load plane of mounted mechanism is in default angle, and the range of the default angle is 60 °~90 °.
16. microwave heating equipment according to claim 13, which is characterized in that the microwave heating equipment further includes first
Rotation motor；The base plate carrying mechanism includes support frame and multiple supporting pins for being set on support frame as described above, the multiple
Supporting pin is used to carry the substrate comprising amorphous silicon layer；Support frame as described above is connect with first rotation motor, and described
One rotation motor can drive the substrate rotation comprising amorphous silicon layer that the load carrier and the supporting pin support；
The microwave generator is fixedly installed below support frame as described above；Or the microwave generator is set on support frame as described above
Side, support frame as described above are connect by retarder with the microwave generator, and the retarder makes institute when support frame as described above rotates
It states microwave generator and support frame as described above generates rotational speed difference.
17. microwave heating equipment according to claim 16, which is characterized in that the microwave heating equipment further includes linear
Motor and fixed structure, the fixed structure include telescopic shaft and the permutation pin that connect with the telescopic shaft both ends, described flexible
Axis is connect with the linear motor, and telescopic shaft described in the linear motor driven is flexible so that the permutation pin release and clamping are solid
The fixed substrate comprising amorphous silicon layer；
The linear motor and the fixed structure are fixedly installed on support frame as described above, the linear motor and the fixed knot
Structure can be rotated with support frame as described above.
18. microwave heating equipment according to claim 13, which is characterized in that the microwave heating equipment further includes second
Rotation motor, second rotation motor are connect with the microwave generator, and second rotation motor can drive the microwave
Generator rotation；
The base plate carrying mechanism includes multiple supporting pins, and the microwave heating cavity is fixed in one end of the multiple supporting pin
Bottom, the other end of the multiple supporting pin can carry the substrate comprising amorphous silicon layer.
19. microwave heating equipment according to claim 13, which is characterized in that the microwave heating equipment further includes taking out very
Null device and/or inert gas filling equipment and gas pipeline, the gas pipeline are connected to the microwave heating chamber and described
Vaccum-pumping equipment or the microwave heating chamber and the inert gas filling equipment.
20. microwave heating equipment according to claim 13, which is characterized in that the inner wall of the microwave heating chamber is provided with
Microwave absorbing material layer.
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| CN109473340B (en) | 2021-10-29 |
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