TWI465594B - Film forming apparatus and film forming substrate manufacturing method - Google Patents
Film forming apparatus and film forming substrate manufacturing method Download PDFInfo
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- TWI465594B TWI465594B TW101105866A TW101105866A TWI465594B TW I465594 B TWI465594 B TW I465594B TW 101105866 A TW101105866 A TW 101105866A TW 101105866 A TW101105866 A TW 101105866A TW I465594 B TWI465594 B TW I465594B
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- 239000000758 substrate Substances 0.000 title claims description 469
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000010408 film Substances 0.000 claims description 105
- 238000001816 cooling Methods 0.000 claims description 78
- 230000032258 transport Effects 0.000 claims description 65
- 238000010438 heat treatment Methods 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 59
- 230000008569 process Effects 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000006837 decompression Effects 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000009434 installation Methods 0.000 description 10
- 230000035882 stress Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Description
本發明係有關一種成膜裝置及成膜基板製造方法。The present invention relates to a film forming apparatus and a method of manufacturing a film forming substrate.
以往，例如於真空腔室內進行基板的處理等之成膜裝置藉由使成膜材料根據設置在腔室內之蒸鍍裝置蒸鍍在基板上來進行成膜。在這種成膜裝置中，已知有利用在傳送方向上旋轉自如的傳送輥直接傳送基板者。Conventionally, for example, a film forming apparatus that performs processing of a substrate in a vacuum chamber or the like is formed by depositing a film forming material on a substrate by a vapor deposition device provided in a chamber. In such a film forming apparatus, a person who directly conveys a substrate by a conveying roller that is rotatable in the conveying direction is known.
專利文獻1：日本特開2010-147256號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2010-147256
在如上述的成膜裝置中，在進行成膜之前加熱基板，並在成膜後冷卻基板。習知技術中，由於利用傳送輥直接傳送基板，因此導致在加熱或冷卻基板之製程中，從基板的與傳送輥接觸之部份向傳送輥傳熱。藉此，在基板的與傳送輥接觸之部份和不接觸之部份產生溫度差，藉此有在基板上發生變形等以至應力變高而導致斷裂之虞。In the film forming apparatus as described above, the substrate is heated before film formation, and the substrate is cooled after film formation. In the prior art, since the substrate is directly transferred by the transfer roller, heat is transferred from the portion of the substrate which is in contact with the transfer roller to the transfer roller during the process of heating or cooling the substrate. Thereby, a temperature difference is generated in a portion of the substrate which is in contact with the transfer roller and a portion which is not in contact with each other, whereby deformation occurs on the substrate and the stress is increased to cause breakage.
本發明係為了解決上述課題而完成者，其目的在於提供一種可抑制基板內的溫度差並緩和在基板上產生之應力 之成膜裝置及成膜基板製造方法。The present invention has been made to solve the above problems, and an object of the invention is to provide a method for suppressing a temperature difference in a substrate and alleviating stress generated on the substrate. A film forming apparatus and a film forming substrate manufacturing method.
基於本發明之成膜裝置為一種於基板上進行成膜材料的成膜之成膜裝置，其特徵為，具備：腔室，導入基板；加熱手段，於該腔室內加熱基板；旋轉自如的傳送輥，設置在腔室內，與基板接觸並傳送基板；及控制手段，以正旋轉與逆旋轉方式切換該傳送輥的旋轉，使基板在基於加熱手段加熱時往返移動。A film forming apparatus according to the present invention is a film forming apparatus for forming a film forming material on a substrate, comprising: a chamber, an introduction substrate; and a heating means for heating the substrate in the chamber; and rotating the substrate freely a roller disposed in the chamber to be in contact with the substrate and transporting the substrate; and a control means for switching the rotation of the conveying roller in a positive rotation and a reverse rotation manner to reciprocate the substrate when heated by the heating means.
依這種成膜裝置，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的傳送輥的旋轉，並加熱基板的同時，使基板往返移動，因此，基板與傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被加熱之基板與溫度低於基板之傳送輥的接點，能夠避免只有基板的特定部位與傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大加熱手段的設置範圍就能夠進行基板的加熱。並且，由於旋轉傳送輥的同時加熱基板，因此，能夠降低基板與傳送輥的摩擦係數，並能夠容許因加熱產生之基板的伸長。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的伸長時，亦能夠藉由旋轉傳送輥來降低摩擦係數，使基板容易偏移。因此，當基板被加熱而伸長時，由於基板偏移，因此能夠緩和在基板上產生之熱應力。According to such a film forming apparatus, since the rotation of the transfer roller which is in contact with the substrate and the transfer of the substrate can be performed in the forward rotation and the reverse rotation manner, and the substrate is heated while the substrate is heated, the substrate and the transfer roller are moved back and forth. The contacts are not fixed and can change the position of the contacts. That is, by moving the heated substrate to the contact point of the transfer roller having a lower temperature than the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the transfer roller and suppress the temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to heat the substrate without enlarging the installation range of the heating means. Further, since the substrate is heated while rotating the transport roller, the friction coefficient between the substrate and the transport roller can be reduced, and the elongation of the substrate due to heating can be tolerated. When the conveying roller is stationary, even if the friction coefficient is high and the elongation of the substrate cannot be allowed, the friction coefficient can be reduced by rotating the conveying roller, and the substrate can be easily displaced. Therefore, when the substrate is heated and elongated, the thermal stress generated on the substrate can be alleviated due to the substrate shift.
並且，加熱手段具有向與基板的傳送方向交叉之方向 延伸並在傳送方向上隔開預定的間隔配置之複數個加熱器為較佳。藉此，能夠減少加熱器數量的同時，藉由基板的往返移動謀求溫度分佈的均勻化。Moreover, the heating means has a direction crossing the conveying direction of the substrate A plurality of heaters extending and arranged at a predetermined interval in the conveying direction are preferred. Thereby, the number of heaters can be reduced, and the temperature distribution can be made uniform by the reciprocating movement of the substrate.
並且，控制手段使基板往返移動相當於加熱器的配置間隔的60%~100%的距離之量為較佳。根據這種結構，尤其能夠謀求溫度分佈的均勻化。Further, it is preferable that the control means shifts the substrate back and forth by an amount corresponding to a distance of 60% to 100% of the arrangement interval of the heaters. According to this configuration, in particular, the temperature distribution can be made uniform.
再者，基於本發明之成膜裝置為一種於基板上進行成膜材料的成膜之成膜裝置，其特徵為，具備：冷卻手段，冷卻基板；旋轉自如的傳送輥，與基板接觸並傳送基板；及控制手段，以正旋轉與逆旋轉方式切換傳送輥的旋轉，使基板在基於冷卻手段冷卻時往返移動。Further, the film forming apparatus according to the present invention is a film forming apparatus for forming a film forming material on a substrate, comprising: a cooling means, a cooling substrate; a rotatably transporting roller, which is in contact with the substrate and transported The substrate and the control means switch the rotation of the conveying roller in a positive rotation and a reverse rotation manner to reciprocate the substrate while cooling by the cooling means.
依這種成膜裝置，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的傳送輥的旋轉，並冷卻基板的同時使基板往返移動，因此，基板與傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被冷卻之基板與溫度低於基板之傳送輥的接點，能夠避免只有基板的特定部位與傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大冷卻手段的設置範圍就能夠進行基板的冷卻。並且，由於旋轉傳送輥的同時冷卻基板，因此，並能夠降低基板與傳送輥的摩擦係數，能夠容許因冷卻產生之基板的收縮。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的收縮時，亦能夠藉由旋轉傳送輥來降低摩擦係數，使基板容易偏移。因此，當基板被冷卻而縮小時，由於基板偏移，因此能夠緩 和在基板上產生之拉伸應力。According to the film forming apparatus, since the rotation of the transfer roller that is in contact with the substrate and the transfer of the substrate can be switched in the forward rotation and the reverse rotation manner, and the substrate is reciprocated while the substrate is cooled, the substrate and the transfer roller are connected. The point will not be fixed and the position of the contact can be changed. That is, by moving the substrate to be cooled and the contact point of the transfer roller having a temperature lower than that of the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the transfer roller and suppress the temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to cool the substrate without enlarging the installation range of the cooling means. Further, since the substrate is cooled while rotating the transport roller, the friction coefficient between the substrate and the transport roller can be reduced, and shrinkage of the substrate due to cooling can be tolerated. When the conveying roller is stationary, even if the friction coefficient is high and the shrinkage of the substrate cannot be allowed, the friction coefficient can be reduced by rotating the conveying roller, and the substrate can be easily displaced. Therefore, when the substrate is cooled and reduced, the substrate can be shifted due to the offset And tensile stress generated on the substrate.
並且，控制手段使傳送輥旋轉360度之後，逆向旋轉360度為較佳。藉此，能夠使傳送輥反覆進行一圈正旋轉與一圈逆旋轉的操作的同時，使基板往返移動，並能夠抑制傳送輥內的溫度差，還能夠抑制與傳送輥接觸之基板內的溫度差。Further, after the control means rotates the conveying roller by 360 degrees, it is preferable to rotate 360 degrees in the reverse direction. Thereby, the transfer roller can be reciprocated by one rotation of the positive rotation and one rotation of the reverse rotation, and the temperature difference in the conveyance roller can be suppressed, and the temperature in the substrate in contact with the conveyance roller can be suppressed. difference.
再者，基於本發明之成膜裝置為一種於基板上進行成膜材料的成膜之成膜裝置，其特徵為，具備：腔室，導入基板；加熱手段，於該腔室內加熱基板；旋轉自如的第1傳送輥，設置在腔室內，與基板接觸並傳送基板；加熱傳送控制手段，以正旋轉與逆旋轉方式切換該第1傳送輥的旋轉，使基板在基於加熱手段加熱時往返移動；冷卻手段，冷卻基板；旋轉自如的第2傳送輥，與基板接觸並傳送基板；及冷卻傳送控制手段，以正旋轉與逆旋轉方式切換該第2傳送輥的旋轉，使基板在基於冷卻手段冷卻時往返移動。Further, the film forming apparatus according to the present invention is a film forming apparatus for forming a film forming material on a substrate, comprising: a chamber, a substrate, and a heating means for heating the substrate in the chamber; and rotating The first transport roller is disposed in the chamber, is in contact with the substrate and transports the substrate, and the heating transfer control means switches the rotation of the first transport roller in a positive rotation and a reverse rotation manner to reciprocate the substrate when heated by the heating means. a cooling means for cooling the substrate; a second transfer roller that is rotatable, contacting the substrate and transporting the substrate; and a cooling transfer control means for switching the rotation of the second transfer roller in a positive rotation and a reverse rotation manner to cause the substrate to be cooled based Move back and forth while cooling.
依這種成膜裝置，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的第1傳送輥的旋轉，並加熱基板的同時，使基板往返移動，因此，基板與第1傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被加熱之基板與溫度低於基板之第1傳送輥的接點，能夠避免只有基板的特定部位與第1傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大加熱手段的設置範圍就能夠進行基板的加熱。並且， 由於旋轉第1傳送輥的同時加熱基板，因此，能夠降低基板與第1傳送輥的摩擦係數，並能夠容許因加熱產生之基板的伸長。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的伸長時，亦能夠藉由旋轉第1傳送輥來降低摩擦係數，使基板容易偏移。因此，當基板被加熱而伸長時，由於基板偏移，因此能夠緩和在基板上產生之熱應力。According to the film forming apparatus, the rotation of the first transport roller that is rotatably contacted with the substrate can be switched by the positive rotation and the reverse rotation, and the substrate can be reciprocated while the substrate is heated, thereby 1 The contact of the transfer roller is not fixed and the position of the contact can be changed. That is, by moving the heated substrate to the contact point of the first transfer roller having a lower temperature than the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the first transfer roller, and to suppress a temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to heat the substrate without enlarging the installation range of the heating means. and, Since the substrate is heated while rotating the first transport roller, the friction coefficient between the substrate and the first transport roller can be reduced, and the elongation of the substrate due to heating can be tolerated. When the conveying roller is stationary, even if the friction coefficient is high and the elongation of the substrate cannot be allowed, the friction coefficient can be lowered by rotating the first conveying roller, and the substrate can be easily displaced. Therefore, when the substrate is heated and elongated, the thermal stress generated on the substrate can be alleviated due to the substrate shift.
並且，依這種成膜裝置，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的第2傳送輥的旋轉，並冷卻基板的同時，使基板往返移動，因此，基板與第2傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被冷卻之基板與溫度低於基板之第2傳送輥的接點，能夠避免只有基板的特定部位與第2傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大冷卻手段的設置範圍就能夠進行基板的冷卻。並且，旋轉第2傳送輥的同時冷卻基板，因此，能夠降低基板與第2傳送輥的摩擦係數，並能夠容許因冷卻產生之基板的收縮。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的收縮時，亦能夠藉由旋轉第2傳送輥來降低摩擦係數，使基板容易偏移。因此，當基板被冷卻而縮小時，由於基板偏移，因此能夠緩和在基板上產生之拉伸應力。Further, according to the film forming apparatus, the rotation of the second transfer roller that is rotatably connected to the substrate can be switched by the positive rotation and the reverse rotation, and the substrate can be reciprocated while the substrate is reciprocated while cooling the substrate. The contact with the second transfer roller is not fixed and the position of the contact can be changed. In other words, by moving the substrate to be cooled and the contact point of the second transfer roller having a lower temperature than the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the second transfer roller, and to suppress a temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to cool the substrate without enlarging the installation range of the cooling means. Further, since the substrate is cooled while rotating the second transport roller, the friction coefficient between the substrate and the second transport roller can be reduced, and shrinkage of the substrate due to cooling can be tolerated. When the conveying roller is stationary, even if the friction coefficient is high and the shrinkage of the substrate cannot be allowed, the friction coefficient can be lowered by rotating the second conveying roller, and the substrate can be easily displaced. Therefore, when the substrate is cooled and reduced, the tensile stress generated on the substrate can be alleviated due to the substrate shift.
再者，基於本發明之成膜基板製造方法為製造成膜材料於基板上成膜之成膜基板之方法，其特徵為，具備：加 熱製程，於導入基板之腔室內加熱基板；及傳送製程，利用設置在腔室內且與基板接觸之旋轉自如的傳送輥傳送基板，傳送製程中，在基於加熱製程加熱時，以正旋轉與逆旋轉方式切換傳送輥的旋轉並使基板往返移動。Furthermore, the method for producing a film-forming substrate according to the present invention is a method for producing a film-forming substrate on which a film-forming material is formed on a substrate, and is characterized in that: a thermal process for heating a substrate in a chamber into which the substrate is introduced; and a transfer process for transporting the substrate by a transfer roller disposed in the chamber and in contact with the substrate, and in the transfer process, when heated by the heating process, with positive rotation and reverse The rotation mode switches the rotation of the conveying roller and moves the substrate back and forth.
依這種成膜基板製造方法，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的傳送輥的旋轉，並加熱基板的同時，使基板往返移動，因此，基板與傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被加熱之基板與溫度低於基板之傳送輥的接點，能夠避免只有基板的特定部位與傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大加熱手段的設置範圍就能夠進行基板的加熱。並且，由於旋轉傳送輥的同時加熱基板，因此，能夠降低基板與傳送輥的摩擦係數，並能夠容許因加熱產生之基板的伸長。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的伸長時，亦能夠藉由旋轉傳送輥來降低摩擦係數，使基板容易偏移。因此，當基板被加熱而伸長時，由於基板偏移，因此能夠緩和在基板上產生之熱應力。According to the method of manufacturing a film-forming substrate, the rotation of the transfer roller that is in contact with the substrate and the transfer of the substrate can be controlled by the normal rotation and the reverse rotation, and the substrate is heated while the substrate is heated, thereby transferring the substrate and transferring the substrate. The contact of the roller is not fixed and the position of the contact can be changed. That is, by moving the heated substrate to the contact point of the transfer roller having a lower temperature than the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the transfer roller and suppress the temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to heat the substrate without enlarging the installation range of the heating means. Further, since the substrate is heated while rotating the transport roller, the friction coefficient between the substrate and the transport roller can be reduced, and the elongation of the substrate due to heating can be tolerated. When the conveying roller is stationary, even if the friction coefficient is high and the elongation of the substrate cannot be allowed, the friction coefficient can be reduced by rotating the conveying roller, and the substrate can be easily displaced. Therefore, when the substrate is heated and elongated, the thermal stress generated on the substrate can be alleviated due to the substrate shift.
並且，加熱製程中利用向與基板的傳送方向交叉之方向延伸並在傳送方向上隔開預定的間隔配置之複數個加熱器加熱基板為較佳。藉此，能夠減少加熱器數量的同時，藉由基板的往返移動謀求溫度分佈的均勻化。Further, in the heating process, it is preferable to heat the substrate by a plurality of heaters which extend in a direction crossing the transfer direction of the substrate and are arranged at a predetermined interval in the transport direction. Thereby, the number of heaters can be reduced, and the temperature distribution can be made uniform by the reciprocating movement of the substrate.
並且，傳送製程中使基板往返移動相當於加熱器的配置間隔的60~大致100%的距離之量為較佳。根據這種結 構，尤其能夠謀求溫度分佈的均勻化。Further, it is preferable that the substrate is reciprocated in the transfer process by an amount corresponding to a distance of 60 to approximately 100% of the arrangement interval of the heaters. According to this knot In particular, it is possible to achieve uniform temperature distribution.
再者，基於本發明之成膜基板製造方法為製造成膜材料成膜於基板上之成膜基板之方法，其特徵為，具備：冷卻製程，冷卻基板；及傳送製程，利用與基板接觸之旋轉自如的傳送輥傳送前述基板，傳送製程中，在基於冷卻製程冷卻時，以正旋轉與逆旋轉方式切換傳送輥的旋轉並使基板往返移動。Furthermore, the method for producing a film-forming substrate according to the present invention is a method for producing a film-forming substrate on which a film-forming material is formed on a substrate, comprising: a cooling process, cooling the substrate; and a transfer process using the substrate The rotatably conveyable roller conveys the substrate, and during the transfer process, when the cooling is performed by the cooling process, the rotation of the transfer roller is switched in a forward rotation and a reverse rotation manner, and the substrate is reciprocated.
依這種成膜基板製造方法，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的傳送輥的旋轉，並冷卻基板的同時，使基板往返移動，因此，基板與傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被冷卻之基板與溫度低於基板之傳送輥的接點，能夠避免只有基板的特定部位與傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大冷卻手段的設置範圍就能夠進行基板的冷卻。並且，由於旋轉傳送輥的同時冷卻基板，因此，能夠降低基板與傳送輥的摩擦係數，並能夠容許因冷卻產生之基板的收縮。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的收縮時，亦能夠藉由旋轉傳送輥來降低摩擦係數，使基板容易偏移。因此，基板被冷卻而縮小時，由於基板偏移，因此能夠緩和在基板上產生之拉伸應力。According to the method of manufacturing a film-forming substrate, the rotation of the transfer roller that is in contact with the substrate and the transfer of the substrate can be performed by the positive rotation and the reverse rotation, and the substrate is reciprocated while the substrate is cooled, so that the substrate and the transfer are performed. The contact of the roller is not fixed and the position of the contact can be changed. That is, by moving the substrate to be cooled and the contact point of the transfer roller having a temperature lower than that of the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the transfer roller and suppress the temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to cool the substrate without enlarging the installation range of the cooling means. Further, since the substrate is cooled while rotating the transport roller, the friction coefficient between the substrate and the transport roller can be reduced, and shrinkage of the substrate due to cooling can be tolerated. When the conveying roller is stationary, even if the friction coefficient is high and the shrinkage of the substrate cannot be allowed, the friction coefficient can be reduced by rotating the conveying roller, and the substrate can be easily displaced. Therefore, when the substrate is cooled and reduced, the substrate is displaced, so that the tensile stress generated on the substrate can be alleviated.
並且，傳送製程中使傳送輥旋轉360度之後，逆向旋轉360度為較佳。藉此，能夠使傳送輥反覆進行一圈正旋轉與一圈逆旋轉的操作同時，使基板往返移動，並能夠抑 制傳送輥內的溫度差，還能夠抑制與傳送輥接觸之基板內的溫度差。Further, after the conveying roller is rotated 360 degrees in the conveying process, it is preferable to rotate 360 degrees in the reverse direction. Thereby, the transfer roller can be repeatedly rotated one turn and one reverse rotation, and the substrate can be moved back and forth. The temperature difference in the transfer roller can also suppress the temperature difference in the substrate in contact with the transfer roller.
再者，基於本發明之成膜基板製造方法為製造成膜材料成膜於基板上之成膜基板之方法，其特徵為，具備：加熱製程，於導入基板之腔室內加熱基板；第1傳送製程，利用設置在腔室內且與基板接觸之旋轉自如的第1傳送輥傳送基板；冷卻製程，冷卻基板；及第2傳送製程，利用與基板接觸之旋轉自如的第2傳送輥傳送基板，第1傳送製程中，在基於加熱製程加熱時，以正旋轉與逆旋轉方式切換第1傳送輥的旋轉並使基板往返移動，第2傳送製程中，在基於冷卻製程冷卻時，以正旋轉與逆旋轉方式切換第2傳送輥的旋轉並使基板往返移動。Furthermore, the method for producing a film-forming substrate according to the present invention is a method for producing a film-forming substrate on which a film-forming material is formed on a substrate, comprising: a heating process for heating the substrate in a chamber into which the substrate is introduced; and a first transfer The process of transferring a substrate by a first transfer roller that is rotatably provided in the chamber and in contact with the substrate; cooling the process to cool the substrate; and the second transfer process, transferring the substrate by a second transfer roller that is rotatable in contact with the substrate, (1) In the transfer process, when the heating is performed by the heating process, the rotation of the first transfer roller is switched in the forward rotation and the reverse rotation manner, and the substrate is moved back and forth. In the second transfer process, when the cooling is performed based on the cooling process, the positive rotation and the reverse are performed. The rotation of the second transport roller is switched by the rotation mode to move the substrate back and forth.
依這種成膜基板製造方法，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的第1傳送輥的旋轉，並加熱基板的同時，使基板往返移動，因此，基板與第1傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被加熱之基板與溫度低於基板之第1傳送輥的接點，能夠避免只有基板的特定部位與第1傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大加熱手段的設置範圍就能夠進行基板的加熱。並且，由於旋轉第1傳送輥的同時加熱基板，因此，能夠降低基板與第1傳送輥的摩擦係數，並能夠容許因加熱產生之基板的伸長。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的伸長時，亦能夠藉由旋轉第1傳 送輥來降低摩擦係數，使基板容易偏移。因此，當基板被加熱而伸長時，由於基板偏移，因此能夠緩和在基板上產生之熱應力。According to the method of manufacturing a film-forming substrate, the rotation of the first transfer roller that is rotatably connected to the substrate can be switched by the normal rotation and the reverse rotation, and the substrate can be reciprocated while the substrate is heated, thereby The contact with the first transfer roller is not fixed and the position of the contact can be changed. That is, by moving the heated substrate to the contact point of the first transfer roller having a lower temperature than the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the first transfer roller, and to suppress a temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to heat the substrate without enlarging the installation range of the heating means. Further, since the substrate is heated while rotating the first transport roller, the friction coefficient between the substrate and the first transport roller can be reduced, and the elongation of the substrate due to heating can be allowed. When the conveying roller is stationary, even if the coefficient of friction is high and the elongation of the substrate cannot be tolerated, the first pass can be rotated. The rollers are fed to reduce the coefficient of friction and the substrate is easily offset. Therefore, when the substrate is heated and elongated, the thermal stress generated on the substrate can be alleviated due to the substrate shift.
並且，依這種成膜基板製造方法，由於能夠以正旋轉與逆旋轉方式切換與基板接觸並傳送基板之旋轉自如的第2傳送輥的旋轉，並冷卻基板的同時，使基板往返移動，因此，基板與第2傳送輥的接點不會被固定而能夠改變接點的位置。亦即，藉由挪動被冷卻之基板與溫度低於基板之第2傳送輥的接點，能夠避免只有基板的特定部位與第2傳送輥接觸，並抑制基板內的溫度差。並且，藉由往返移動基板，無需擴大冷卻手段的設置範圍就能夠進行基板的冷卻。並且，由於旋轉第2傳送輥的同時冷卻基板，因此，能夠降低基板與第2傳送輥的摩擦係數，並能夠容許因冷卻產生之基板的收縮。在傳送輥靜止之狀態下，即使摩擦係數較高且無法容許基板的收縮時，亦能夠藉由旋轉第2傳送輥來降低摩擦係數，使基板容易偏移。因此，當基板被冷卻而縮小時，由於基板偏移，因此能夠緩和在基板上產生之拉伸應力。Further, according to the method of manufacturing a film-forming substrate, the rotation of the second transfer roller that is rotatably connected to the substrate can be switched by the positive rotation and the reverse rotation, and the substrate can be reciprocated while the substrate is reciprocated while rotating the substrate. The contact between the substrate and the second transfer roller is not fixed and the position of the contact can be changed. In other words, by moving the substrate to be cooled and the contact point of the second transfer roller having a lower temperature than the substrate, it is possible to prevent only a specific portion of the substrate from coming into contact with the second transfer roller, and to suppress a temperature difference in the substrate. Further, by moving the substrate back and forth, it is possible to cool the substrate without enlarging the installation range of the cooling means. Further, since the substrate is cooled while rotating the second transport roller, the friction coefficient between the substrate and the second transport roller can be reduced, and shrinkage of the substrate due to cooling can be tolerated. When the conveying roller is stationary, even if the friction coefficient is high and the shrinkage of the substrate cannot be allowed, the friction coefficient can be lowered by rotating the second conveying roller, and the substrate can be easily displaced. Therefore, when the substrate is cooled and reduced, the tensile stress generated on the substrate can be alleviated due to the substrate shift.
依本發明的成膜裝置及成膜基板製造方法，由於可抑制基板內的溫度差，並緩和在基板上產生之應力，因此能夠降低基板斷裂之可能性。According to the film forming apparatus and the film forming substrate manufacturing method of the present invention, since the temperature difference in the substrate can be suppressed and the stress generated on the substrate can be alleviated, the possibility of the substrate being broken can be reduced.
參考附圖對本發明之成膜裝置進行說明。再者，“上”、“下”等表示方向之詞語基於附圖所示之狀態且係為方便起見者。The film forming apparatus of the present invention will be described with reference to the drawings. In addition, the words "upper", "lower", etc., which indicate directions, are based on the state shown in the drawings and are convenient.
第1圖係表示本發明的實施方式之成膜裝置之概要側視圖。第1圖所示之成膜裝置100係對基板(例如玻璃基板)實施成膜等處理者。成膜裝置100為藉由濺射法進行成膜之裝置，係在真空中的稀薄氬氣氣氛下產生電漿，藉由使電漿中的正離子碰撞成膜材料來彈出金屬原子，並使其附著於基板上來進行成膜者。Fig. 1 is a schematic side view showing a film forming apparatus according to an embodiment of the present invention. The film forming apparatus 100 shown in Fig. 1 performs processing such as film formation on a substrate (for example, a glass substrate). The film forming apparatus 100 is a device for forming a film by a sputtering method, which generates a plasma under a rare argon atmosphere in a vacuum, and ejects a metal atom by causing positive ions in the plasma to collide with the film forming material. It is attached to a substrate to perform film formation.
成膜裝置100能夠應用於例如製造太陽能電池之太陽能電池製造裝置、製造液晶顯示元件之液晶顯示元件製造裝置、及製造平面輸入元件(觸控面板)之平面輸入元件製造裝置等中。The film forming apparatus 100 can be applied to, for example, a solar cell manufacturing apparatus for manufacturing a solar cell, a liquid crystal display element manufacturing apparatus for manufacturing a liquid crystal display element, and a planar input element manufacturing apparatus for manufacturing a planar input element (touch panel).
成膜裝置100具備裝入鎖定腔室121、緩衝腔室122、成膜腔室(成膜室)123、緩衝腔室124及裝入鎖定腔室125。這些腔室121~125以如上順序依次排列而配置。所有腔室121~125由真空容器構成，於腔室121~125的輸入輸出口設置有開閉閘131~136。The film forming apparatus 100 includes a loading lock chamber 121, a buffer chamber 122, a film forming chamber (film forming chamber) 123, a buffer chamber 124, and a loading lock chamber 125. These chambers 121 to 125 are arranged in this order in this order. All of the chambers 121 to 125 are constituted by vacuum vessels, and opening and closing gates 131 to 136 are provided at the input and output ports of the chambers 121 to 125.
成膜裝置100上設置有用於傳送基板之傳送裝置91(參考第2圖、第3圖)。傳送裝置91例如包括公知的輥91a與旋轉該輥91a之驅動機構(未圖示)。並且，基板 藉由傳送裝置91傳送，依次通過腔室121~125內。如第4圖所示，輥91a配置成從下方支撐基板101的寬度方向(圖示的X方向)的兩側端部。並且，輥91a成為圍繞向基板101的寬度方向延伸之預定的軸線旋轉自如的結構。The film forming apparatus 100 is provided with a transporting device 91 for transporting a substrate (refer to Figs. 2 and 3). The conveying device 91 includes, for example, a known roller 91a and a driving mechanism (not shown) that rotates the roller 91a. And the substrate It is transported by the transport device 91 and sequentially passes through the chambers 121 to 125. As shown in Fig. 4, the roller 91a is disposed to support both end portions in the width direction (X direction in the drawing) of the substrate 101 from below. Further, the roller 91a has a structure that is rotatable around a predetermined axis extending in the width direction of the substrate 101.
成膜裝置100為不使用載置基板101之托盤而使基板101與輥91a直接接觸來傳送之無托盤型裝置。The film forming apparatus 100 is a trayless type apparatus that transports the substrate 101 directly to the roller 91a without using the tray on which the substrate 101 is placed.
各真空腔室121~125上連接有用於將內部設為適當的壓力的真空泵(未圖示)。並且，各真空腔室121~125中設置有複數個(例如2個)用於監控腔室內的壓力之真空儀95(參考第2圖)。各腔室121~125上連通與真空泵連接之真空排氣管96，且在該真空排氣管96設置有真空儀95。A vacuum pump (not shown) for setting the inside to an appropriate pressure is connected to each of the vacuum chambers 121 to 125. Further, a plurality of (for example, two) vacuum gauges 95 for monitoring the pressure in the chamber are provided in each of the vacuum chambers 121 to 125 (refer to FIG. 2). Each of the chambers 121 to 125 communicates with a vacuum exhaust pipe 96 connected to a vacuum pump, and a vacuum gauge 95 is disposed in the vacuum exhaust pipe 96.
裝入鎖定腔室121為藉由開放設置在入口側之開閉閘131而被大氣開放並導入處理之基板之腔室。裝入鎖定腔室121的出口側透過開閉閘132與緩衝腔室122的入口側連接。The loading lock chamber 121 is a chamber that is opened by the atmosphere and introduced into the processed substrate by opening and closing the opening and closing gate 131 provided on the inlet side. The outlet side of the loading lock chamber 121 is connected to the inlet side of the buffer chamber 122 through the opening and closing gate 132.
第2圖及第3圖係表示本發明的實施方式之成膜裝置的緩衝腔室(加熱用)之截面圖。緩衝腔室122為藉由開放設置在入口側之開閉閘132來與裝入鎖定腔室121連通且導入通過裝入鎖定腔室121之基板101之壓力調整用腔室。緩衝腔室122的出口側透過開閉閘133與成膜腔室123的入口側連接。並且，緩衝腔室122中設置有用於加熱基板101的加熱器92。該加熱器92為了加熱基板101的上面而設置在基板101的上方。在緩衝腔室122中加熱 成基板溫度成為例如200℃左右。緩衝腔室122設置在成膜腔室123的前段，並作為加熱基板101之加熱用腔室發揮作用。2 and 3 are cross-sectional views showing a buffer chamber (for heating) of the film forming apparatus according to the embodiment of the present invention. The buffer chamber 122 is connected to the load lock chamber 121 by opening and closing the opening and closing gate 132 provided on the inlet side, and is introduced into the pressure adjustment chamber through the substrate 101 loaded in the lock chamber 121. The outlet side of the buffer chamber 122 is connected to the inlet side of the film forming chamber 123 through the opening and closing gate 133. Further, a heater 92 for heating the substrate 101 is provided in the buffer chamber 122. The heater 92 is provided above the substrate 101 in order to heat the upper surface of the substrate 101. Heating in the buffer chamber 122 The substrate temperature is, for example, about 200 °C. The buffer chamber 122 is provided in the front stage of the film forming chamber 123, and functions as a heating chamber for heating the substrate 101.
加熱器92為燈式加熱器，向與基板101的傳送方向Y交叉之方向X延伸。加熱器92在緩衝腔室122內設置多根(例如12根)，並在傳送方向Y上隔開預定間隔P配置。加熱器92的熱傳熱至基板101並加熱基板101。The heater 92 is a lamp heater and extends in a direction X intersecting the transport direction Y of the substrate 101. The heater 92 is provided in the buffer chamber 122 in a plurality (for example, twelve), and is disposed at a predetermined interval P in the transport direction Y. The heat of the heater 92 is transferred to the substrate 101 and the substrate 101 is heated.
成膜腔室123為藉由開放設置在入口側之開閉閘133來與緩衝腔室122連通且導入通過緩衝腔室122之基板101並在基板101成膜薄膜層之處理腔室。成膜腔室123的出口側透過開閉閘134與緩衝腔室124的入口側連接。在成膜腔室123內設置有用於在基板101進行成膜材料(薄膜層)的成膜之蒸鍍裝置(未圖示)。並且，成膜腔室123中設置有用於加熱基板101的加熱器。該加熱器為了加熱基板101的上面而設置於比基板101更靠上方。成膜腔室123中基板溫度維持在例如200℃左右。The film forming chamber 123 is a processing chamber that communicates with the buffer chamber 122 by opening and closing the opening and closing gate 133 provided on the inlet side, and is introduced into the substrate 101 passing through the buffer chamber 122 to form a film layer on the substrate 101. The outlet side of the film forming chamber 123 is connected to the inlet side of the buffer chamber 124 through the opening and closing gate 134. A vapor deposition device (not shown) for forming a film forming material (thin film layer) on the substrate 101 is provided in the film forming chamber 123. Further, a heater for heating the substrate 101 is provided in the film forming chamber 123. The heater is disposed above the substrate 101 in order to heat the upper surface of the substrate 101. The substrate temperature in the film forming chamber 123 is maintained at, for example, about 200 °C.
第5圖係表示本發明的實施方式之成膜裝置的緩衝腔室(冷卻用)之截面圖。緩衝腔室124為藉由開放設置在入口側之開閉閘134來與成膜腔室123連通且導入藉由成膜腔室123成膜之基板101之壓力調整用腔室。緩衝腔室124的出口側透過開閉閘135與裝入鎖定腔室125的入口側連接。並且，緩衝腔室124中設置有用於冷卻基板101的冷卻板93。該冷卻板為了冷卻基板101的上面而設置在基板101的上方。緩衝腔室124中冷卻成基板溫度成為例 如120℃左右。緩衝腔室124設置在成膜腔室123的後段，作為冷卻基板101之冷卻用腔室發揮作用。再者，可為未在緩衝腔室124設置冷卻手段之結構。亦可為在從真空腔室放出後的大氣壓環境下藉由大氣冷卻(空冷)基板101之結構。Fig. 5 is a cross-sectional view showing a buffer chamber (for cooling) of the film forming apparatus of the embodiment of the present invention. The buffer chamber 124 is a pressure adjusting chamber that communicates with the film forming chamber 123 by opening and closing the opening and closing gate 134 provided on the inlet side, and is introduced into the substrate 101 formed by the film forming chamber 123. The outlet side of the buffer chamber 124 is connected to the inlet side of the lock chamber 125 through the opening and closing gate 135. Further, a cooling plate 93 for cooling the substrate 101 is provided in the buffer chamber 124. The cooling plate is provided above the substrate 101 in order to cool the upper surface of the substrate 101. Cooling into a substrate temperature in the buffer chamber 124 is an example Such as about 120 °C. The buffer chamber 124 is provided in the rear stage of the film forming chamber 123, and functions as a cooling chamber for cooling the substrate 101. Further, it may be a structure in which a cooling means is not provided in the buffer chamber 124. It is also possible to cool (air-cool) the substrate 101 by atmospheric cooling in an atmospheric pressure environment after being discharged from the vacuum chamber.
冷卻板93係作為冷卻基板101之冷卻手段發揮作用者。冷卻板93例如由銅板形成並呈板狀，配置成與基板101相對。冷卻板93上設置有流通冷卻水之冷卻管(未圖示)。基板101的熱傳熱至冷卻板93，傳遞至冷卻板93之熱傳熱至冷卻管，冷卻管藉由在管內流動之冷卻水冷卻。藉此，冷卻板93被冷卻而冷卻基板101。The cooling plate 93 functions as a cooling means for cooling the substrate 101. The cooling plate 93 is formed of, for example, a copper plate and has a plate shape, and is disposed to face the substrate 101. A cooling pipe (not shown) through which cooling water flows is provided in the cooling plate 93. The heat of the substrate 101 is transferred to the cooling plate 93, and the heat transferred to the cooling plate 93 is transferred to the cooling pipe, and the cooling pipe is cooled by the cooling water flowing in the pipe. Thereby, the cooling plate 93 is cooled to cool the substrate 101.
裝入鎖定腔室125為藉由開放設置在入口側之開閉閘135來與緩衝腔室124連通且導入通過緩衝腔室124之基板101之腔室。裝入鎖定腔室125的出口側設置開閉閘136，藉由開放開閉閘136裝入鎖定腔室125被大氣開放。裝入鎖定腔室125中藉由大氣開放來進行空冷，並在向腔室外傳送基板101之時刻冷卻至100℃以下。The loading lock chamber 125 is a chamber that communicates with the buffer chamber 124 by opening and closing the opening and closing gate 135 provided on the inlet side and is introduced into the substrate 101 passing through the buffer chamber 124. The opening and closing gate 136 is provided on the outlet side of the lock chamber 125, and is opened by the open opening and closing gate 136 and loaded into the lock chamber 125. The loading lock chamber 125 is air-cooled by opening the atmosphere, and is cooled to 100 ° C or lower at the time of transporting the substrate 101 to the outside of the chamber.
第6圖係表示本發明的實施方式之成膜裝置的基板傳送控制單元之塊結構圖。成膜裝置100具備以正旋轉與逆旋轉方式切換傳送輥91a的旋轉且於緩衝腔室122、124內往返移動基板101之基板傳送控制單元20。Fig. 6 is a block configuration diagram showing a substrate transfer control unit of the film forming apparatus of the embodiment of the present invention. The film forming apparatus 100 includes a substrate transfer control unit 20 that switches the rotation of the transport roller 91a by the normal rotation and the reverse rotation, and reciprocates the substrate 101 in the buffer chambers 122 and 124.
基板傳送控制單元20由進行運算處理之CPU、成為 存儲部之ROM及RAM、輸入信號電路、輸出信號電路及電源電路等構成。基板傳送控制單元20中藉由執行存儲在存儲部之程序構建驅動控制部21A、21B。The substrate transfer control unit 20 is made up of a CPU that performs arithmetic processing. The storage unit has a ROM and a RAM, an input signal circuit, an output signal circuit, and a power supply circuit. The substrate transfer control unit 20 constructs the drive control sections 21A, 21B by executing the program stored in the storage section.
驅動控制部21A係控制用於旋轉驅動設置在緩衝腔室122之傳送輥91a的驅動馬達(電動馬達)22A者。驅動馬達22A根據從驅動控制部21A輸出之指令信號工作。驅動控制部21A控制驅動馬達22A的旋轉方向、旋轉量，並控制設置在緩衝腔室122之傳送輥(第1傳送輥)91a的正旋轉或逆旋轉及旋轉角度。驅動控制部21A作為以正旋轉與逆旋轉方式切換傳送輥91a的旋轉並在基於加熱器92加熱時使基板101往返移動之(加熱傳送)控制手段發揮作用。再者，設置在緩衝腔室122之傳送輥91a的正旋轉是指向成膜腔室123側傳送基板101時的旋轉。設置在緩衝腔室122之傳送輥91a的逆旋轉是指向成膜腔室123的相反側傳送基板101時的旋轉。The drive control unit 21A controls a drive motor (electric motor) 22A for rotationally driving the transport roller 91a provided in the buffer chamber 122. The drive motor 22A operates in accordance with a command signal output from the drive control unit 21A. The drive control unit 21A controls the rotation direction and the rotation amount of the drive motor 22A, and controls the positive rotation or the reverse rotation and the rotation angle of the conveying roller (first conveying roller) 91a provided in the buffer chamber 122. The drive control unit 21A functions as a (heat transfer) control means that switches the rotation of the transport roller 91a in the forward rotation and the reverse rotation manner and reciprocates the substrate 101 when the heater 92 is heated. Further, the positive rotation of the conveying roller 91a provided in the buffer chamber 122 is a rotation when the substrate 101 is conveyed toward the film forming chamber 123 side. The reverse rotation of the conveying roller 91a provided in the buffer chamber 122 is a rotation when the substrate 101 is conveyed toward the opposite side of the film forming chamber 123.
驅動控制部21A使基板101往返移動相當於加熱器92的配置間隔的60%~100%的距離之量為較佳。例如，當與基板傳送方向Y相鄰之加熱器92的配置間隔為80mm時，相對傳送輥91a的設置位置向前後方向移動80mm為較佳。再者，驅動控制部21A使基板101往返移動之距離未必一定準確地限制在加熱器92的配置間隔的60%~100%範圍內。亦可稍微脫離60%~100%範圍。The drive control unit 21A preferably moves the substrate 101 back and forth by an amount corresponding to a distance of 60% to 100% of the arrangement interval of the heaters 92. For example, when the arrangement interval of the heaters 92 adjacent to the substrate conveying direction Y is 80 mm, it is preferable to move the setting position of the conveying roller 91a by 80 mm in the front-rear direction. Further, the distance by which the drive control unit 21A reciprocates the substrate 101 is not necessarily limited to the range of 60% to 100% of the arrangement interval of the heaters 92. It can also be slightly out of the range of 60% to 100%.
驅動控制部21B係控制用於旋轉驅動設置在緩衝腔室124的之傳送輥91a的驅動馬達(電動馬達)22B者。驅 動馬達22B根據從驅動控制部21B輸出之指令信號工作。驅動控制部21B控制驅動馬達22B的旋轉方向、旋轉角度，並控制設置在緩衝腔室124之傳送輥(第2傳送輥)91a的正旋轉或逆旋轉及旋轉角度。驅動控制部21B作為以正旋轉與逆旋轉方式切換傳送輥91a的旋轉並在基於冷卻板93冷卻時使基板101往返移動之(冷卻傳送)控制手段發揮作用。再者，設置在緩衝腔室124之傳送輥91a的正旋轉是指向成膜腔室123的相反側傳送基板101時的旋轉。設置在緩衝腔室124之傳送輥91a的逆旋轉是指向成膜腔室123側傳送基板101時的旋轉。The drive control unit 21B controls a drive motor (electric motor) 22B for rotationally driving the transport roller 91a provided in the buffer chamber 124. drive The motor 22B operates in accordance with a command signal output from the drive control unit 21B. The drive control unit 21B controls the rotation direction and the rotation angle of the drive motor 22B, and controls the positive rotation or the reverse rotation and the rotation angle of the conveyance roller (second conveyance roller) 91a provided in the buffer chamber 124. The drive control unit 21B functions as a (cooling transfer) control means for switching the rotation of the transport roller 91a by the normal rotation and the reverse rotation, and reciprocating the substrate 101 while cooling by the cooling plate 93. Further, the positive rotation of the conveying roller 91a provided in the buffer chamber 124 is a rotation when the substrate 101 is conveyed toward the opposite side of the film forming chamber 123. The reverse rotation of the conveying roller 91a provided in the buffer chamber 124 is a rotation when the substrate 101 is conveyed toward the film forming chamber 123 side.
驅動控制部21B使傳送輥91a旋轉1圈(360度)之後，逆向旋轉1圈來使基板101往返移動為較佳。例如，當傳送輥91a的外徑為60mm時，相對傳送輥的設置位置向前後方向移動180mm為較佳。再者，驅動控制部21B旋轉傳送輥91a之旋轉量未必一定準確地設為1圈。旋轉量可稍微多於1圈，亦可稍微少於1圈。After the drive control unit 21B rotates the transport roller 91a by one rotation (360 degrees), it is preferable to rotate the substrate 101 back and forth by one rotation in the reverse direction. For example, when the outer diameter of the conveying roller 91a is 60 mm, it is preferable to move the position of the conveying roller by 180 mm in the front-rear direction. In addition, the amount of rotation of the rotation of the conveyance roller 91a by the drive control unit 21B is not necessarily set to be exactly one rotation. The amount of rotation can be slightly more than one turn, or slightly less than one turn.
接著，對本發明的實施方式之成膜基板的製造方法進行說明。本實施方式中，對利用第1圖所示之成膜裝置100之成膜基板的製造方法進行說明。該製造方法具備加熱製程(第1傳送製程)、成膜製程及冷卻製程(第2傳送製程)。Next, a method of manufacturing a film formation substrate according to an embodiment of the present invention will be described. In the present embodiment, a method of manufacturing a film formation substrate using the film formation apparatus 100 shown in Fig. 1 will be described. This manufacturing method includes a heating process (first transfer process), a film forming process, and a cooling process (second transfer process).
首先，基板101導入於裝入鎖定腔室121內。裝入鎖定腔室121內被關閉開閉閘131、132而呈密封狀態，並減壓至預定的壓力。基板在裝入鎖定腔室121內傳送並導入於鄰接之緩衝腔室122內。First, the substrate 101 is introduced into the loading lock chamber 121. The opening and closing gates 131 and 132 are closed in the lock chamber 121 to be in a sealed state, and are depressurized to a predetermined pressure. The substrate is transferred within the loading lock chamber 121 and introduced into the adjacent buffer chamber 122.
加熱製程中，在導入有基板101之緩衝腔室122內加熱基板101。第1傳送製程(傳送製程)中，基於加熱製程加熱時，正旋轉或逆旋轉(第1)傳送輥91a來使基板101往返移動。例如，在緩衝腔室122內，在導入基板101之前加熱至預定的溫度。In the heating process, the substrate 101 is heated in the buffer chamber 122 into which the substrate 101 is introduced. In the first transfer process (transfer process), when the heating process is performed based on the heating process, the substrate 101 is reciprocated by rotating or reverse-rotating (first) the transfer roller 91a. For example, in the buffer chamber 122, it is heated to a predetermined temperature before being introduced into the substrate 101.
基板101導入於緩衝腔室122內並傳送至基準位置(例如緩衝腔室122的中央)。緩衝腔室122內被關閉開閉閘132、133而呈密封狀態，並減壓至預定的壓力(與成膜腔室123的壓力相同)。基板傳送控制單元20的驅動控制部21A向驅動馬達22A發送指令信號，使設置在緩衝腔室122之傳送輥91a正旋轉或逆旋轉。藉此，基板101在基於加熱器92加熱時，以基準位置為中心向傳送方向Y往返移動(第1傳送製程)。在此，例如進行20秒以20mm/s速度的10次往返動作。第1傳送製程中，使基板101往返移動相當於加熱器92的配置間隔P的60%~100%(大致60%~大致100%)的距離之量為較佳。基板101加熱至適於成膜之溫度之後，停止基板101的往返移 動。之後，基板101在緩衝腔室122內傳送，並導入於鄰接之成膜腔室123內。The substrate 101 is introduced into the buffer chamber 122 and transferred to a reference position (for example, the center of the buffer chamber 122). The opening and closing gates 132, 133 are closed in the buffer chamber 122 to be in a sealed state, and are depressurized to a predetermined pressure (the same pressure as the film forming chamber 123). The drive control unit 21A of the substrate transfer control unit 20 transmits a command signal to the drive motor 22A to rotate or reversely rotate the transfer roller 91a provided in the buffer chamber 122. Thereby, when the heating by the heater 92 is performed, the substrate 101 reciprocates in the transport direction Y around the reference position (first transfer process). Here, for example, 10 round trips at a speed of 20 mm/s are performed for 20 seconds. In the first transfer process, it is preferable that the substrate 101 is moved back and forth by an amount corresponding to a distance of 60% to 100% (approximately 60% to approximately 100%) of the arrangement interval P of the heaters 92. After the substrate 101 is heated to a temperature suitable for film formation, the reciprocating movement of the substrate 101 is stopped. move. Thereafter, the substrate 101 is transferred in the buffer chamber 122 and introduced into the adjacent film forming chamber 123.
成膜腔室123內在導入基板101之前呈適於成膜之減壓狀態。若基板101導入於成膜腔室123內，則其內被關閉開閉閘133、134而呈密封狀態。並且，成膜腔室123內藉由加熱器92加熱而呈維持基板溫度之狀態。並且，於基板101上進行成膜處理並於基板101上成膜金屬膜(薄膜層)(成膜製程)。The inside of the film forming chamber 123 is in a decompressed state suitable for film formation before being introduced into the substrate 101. When the substrate 101 is introduced into the film forming chamber 123, the opening and closing gates 133 and 134 are closed therein to be in a sealed state. Further, the inside of the film forming chamber 123 is heated by the heater 92 to maintain the temperature of the substrate. Then, a film formation process is performed on the substrate 101, and a metal film (thin film layer) is formed on the substrate 101 (film formation process).
冷卻製程中，於導入有基板101之緩衝腔室124內冷卻基板101。第2傳送製程(傳送製程)中，基於冷卻製程冷卻時，正旋轉或逆旋轉(第2)傳送輥91a來使基板101往返移動。例如，緩衝腔室124內在導入基板101之前冷卻至預定的溫度。再者，冷卻製程亦可不在腔室內執行。In the cooling process, the substrate 101 is cooled in the buffer chamber 124 into which the substrate 101 is introduced. In the second transfer process (transfer process), the substrate 101 is reciprocated by the forward or reverse rotation (second) transfer roller 91a when the cooling process is cooled. For example, the inside of the buffer chamber 124 is cooled to a predetermined temperature before being introduced into the substrate 101. Furthermore, the cooling process may not be performed in the chamber.
基板101導入於緩衝腔室124內並傳送至基準位置(例如緩衝腔室124的中央)。緩衝腔室124內被關閉開閉閘134、135而呈密封狀態，並減壓成預定的壓力。基板傳送控制單元20的驅動控制部21B向驅動馬達22B發送指令信號，使設置在緩衝腔室124之傳送輥91a正旋轉或逆旋轉。藉此，基板101在基於冷卻板93冷卻時，以基 準位置為中心向傳送方向Y往返移動(第2傳送製程)。第2傳送製程中，使傳送輥91a旋轉一圈之後，逆向旋轉1圈，反覆此操作來使基板101往返移動為較佳。冷卻基板101之後，停止基板101的往返移動。之後，基板在緩衝腔室124內傳送，並導入於鄰接之裝入鎖定腔室125內。The substrate 101 is introduced into the buffer chamber 124 and transferred to a reference position (for example, the center of the buffer chamber 124). The buffer chamber 124 is closed in the sealed state by closing the opening and closing gates 134, 135, and is depressurized to a predetermined pressure. The drive control unit 21B of the substrate transfer control unit 20 transmits a command signal to the drive motor 22B to rotate or reversely rotate the transfer roller 91a provided in the buffer chamber 124. Thereby, the substrate 101 is cooled by the cooling plate 93. The quasi-position is centered and moved back and forth in the transport direction Y (second transport process). In the second transfer process, after the transfer roller 91a is rotated once, one rotation is reversed, and the operation is repeated to reciprocate the substrate 101. After the substrate 101 is cooled, the reciprocating movement of the substrate 101 is stopped. Thereafter, the substrate is transferred within the buffer chamber 124 and introduced into the adjacent load lock chamber 125.
在裝入鎖定腔室125內開放開閉閘136，藉由大氣開放來冷卻基板101。冷卻基板101之後，基板101在裝入鎖定腔室125內傳送，並向裝入鎖定腔室125外導出。The opening and closing gate 136 is opened in the loading lock chamber 125, and the substrate 101 is cooled by the atmosphere opening. After the substrate 101 is cooled, the substrate 101 is transferred into the lock chamber 125 and is led out of the load lock chamber 125.
依這種本實施方式的成膜裝置100及成膜基板製造方法，由於能夠以正旋轉與逆旋轉方式切換與基板101接觸並傳送基板101之旋轉自如的傳送輥91a的旋轉，並加熱基板101的同時，使基板101往返移動，因此基板101與傳送輥91a的接點不會被固定(參考第7圖)而能夠改變接點的位置。亦即，藉由挪動被加熱之基板101與溫度低於基板101之傳送輥91a的接點，能夠避免只有基板101的特定部位與傳送輥91a接觸，並抑制基板101內的溫度差。能夠縮小與傳送輥91a接觸之部份和不與傳送輥91a接觸之部份的溫度差。According to the film forming apparatus 100 and the film forming substrate manufacturing method of the present embodiment, the rotation of the transport roller 91a that is in contact with the substrate 101 and the transport of the substrate 101 can be switched by the normal rotation and the reverse rotation, and the substrate 101 is heated. At the same time, the substrate 101 is reciprocated, so that the contact between the substrate 101 and the transport roller 91a is not fixed (refer to Fig. 7), and the position of the contact can be changed. That is, by moving the heated substrate 101 and the contact point of the substrate 130 with the temperature lower than the transfer roller 91a of the substrate 101, it is possible to prevent only a specific portion of the substrate 101 from coming into contact with the transfer roller 91a, and to suppress a temperature difference in the substrate 101. It is possible to reduce the temperature difference between the portion in contact with the conveying roller 91a and the portion not in contact with the conveying roller 91a.
並且，藉由在加熱基板時使基板101往返移動，無需擴大加熱器92的設置範圍就能夠加熱基板101。並且，由於旋轉傳送輥91a的同時加熱基板101，因此，能夠降低基板101與傳送輥91a的摩擦係數，並能夠容許因加熱產生之基板101在寬度方向X上的伸長。在傳送輥91a靜止 之狀態下，摩擦係數較高且無法容許基板101的伸長，導致基板101在寬度方向X的中央較大地撓曲。因此，能夠藉由旋轉傳送輥91a來降低摩擦係數，使基板101容易向寬度方向X偏移。因此，當基板101被加熱而向寬度方向X伸長時，基板101的寬度方向X的端部向外側偏移，因此能夠緩和基板101因壓縮力向板厚方向的撓曲。其結果，能夠降低基板101斷裂或撓曲之基板101與其他組件(例如設置在傳送基板101之路徑附近之反射板)干涉的可能性。Further, by rotating the substrate 101 while heating the substrate, the substrate 101 can be heated without enlarging the installation range of the heater 92. Further, since the substrate 101 is heated while rotating the transport roller 91a, the friction coefficient of the substrate 101 and the transport roller 91a can be reduced, and the elongation of the substrate 101 due to heating in the width direction X can be accommodated. At the conveying roller 91a is stationary In this state, the friction coefficient is high and the elongation of the substrate 101 cannot be allowed, and the substrate 101 is largely deflected at the center in the width direction X. Therefore, the friction coefficient can be reduced by rotating the transport roller 91a, and the substrate 101 can be easily shifted in the width direction X. Therefore, when the substrate 101 is heated and elongated in the width direction X, the end portion of the substrate 101 in the width direction X is shifted outward, so that the deflection of the substrate 101 in the thickness direction by the compressive force can be alleviated. As a result, it is possible to reduce the possibility that the substrate 101 which is broken or deflected by the substrate 101 interferes with other components (for example, a reflector provided in the vicinity of the path of the transfer substrate 101).
並且，在成膜裝置100的加熱手段及成膜基板製造方法的加熱製程中，利用向與基板101的傳送方向Y交叉之方向X延伸並在傳送方向Y上隔開預定間隔P配置之複數個加熱器92加熱基板101，在基板傳送控制單元20及傳送製程中，由於使基板101往返移動相當於加熱器92的配置間隔P的大致60%~大致100%的距離之量，因此能夠抑制在基板101的傳送方向Y上的基板101內的溫度差，並且能够縮減加熱器92的設置數量。例如，與使基板靜止來加熱之習知裝置相比，能夠將加熱器92縮減為50%根數。In the heating process of the film forming apparatus 100 and the heating process of the film forming substrate manufacturing method, a plurality of pieces are arranged in a direction X intersecting the transport direction Y of the substrate 101 and spaced apart by a predetermined interval P in the transport direction Y. The heater 92 heats the substrate 101, and in the substrate transfer control unit 20 and the transfer process, the substrate 101 is reciprocated by an amount corresponding to a distance of approximately 60% to approximately 100% of the arrangement interval P of the heaters 92. The temperature difference in the substrate 101 in the transport direction Y of the substrate 101, and the number of the heaters 92 can be reduced. For example, the heater 92 can be reduced to 50% of the number compared to conventional devices that heat the substrate to stand still.
並且，依本實施方式的成膜裝置100及成膜基板製造方法，由於能夠以正旋轉與逆旋轉方式切換與基板101接觸並傳送基板101之旋轉自如的傳送輥91a的旋轉，並冷卻基板101的同時，使基板101往返移動，因此基板101與傳送輥91a的接點不會被固定(參考第7圖)而能夠改 變接點的位置。亦即，藉由挪動被冷卻之基板101與溫度低於基板101之傳送輥91a的接點，能夠避免只有基板101的特定部位與傳送輥91a接觸，並抑制基板101內的溫度差。能夠縮小與傳送輥91a接觸之部份和不與傳送輥91a接觸之部份的溫度差。Further, according to the film forming apparatus 100 and the film forming substrate manufacturing method of the present embodiment, the rotation of the transport roller 91a that is rotatably contacted with the substrate 101 by the positive rotation and the reverse rotation can be switched, and the substrate 101 can be cooled. At the same time, the substrate 101 is reciprocated, so that the contact between the substrate 101 and the transport roller 91a is not fixed (refer to FIG. 7). The position of the junction. That is, by moving the substrate 101 to be cooled and the contact point of the substrate 130 to the transfer roller 91a, the specific portion of the substrate 101 can be prevented from coming into contact with the transfer roller 91a, and the temperature difference in the substrate 101 can be suppressed. It is possible to reduce the temperature difference between the portion in contact with the conveying roller 91a and the portion not in contact with the conveying roller 91a.
並且，藉由在冷卻基板時使基板101往返移動，無需擴大冷卻板93的設置範圍就能夠冷卻基板101。並且，旋轉傳送輥91a的同時冷卻基板101，因此，能夠降低基板101與傳送輥91a的摩擦係數，並能夠容許因冷卻產生之基板101在寬度方向X上的收縮。在傳送輥91a靜止之狀態下，即使摩擦係數較高且無法容許基板的收縮時，亦能夠藉由旋轉傳送輥91a來降低摩擦係數，使基板101容易向寬度方向X偏移。因此，當基板101冷卻而縮小時，由於基板101的寬度方向X的端部向內側偏移，因此能夠緩和在基板101上產生之拉伸應力。其結果，能夠降低基板101斷裂之可能性。Further, by reciprocating the substrate 101 while cooling the substrate, the substrate 101 can be cooled without enlarging the installation range of the cooling plate 93. Further, since the substrate 101 is cooled while rotating the transport roller 91a, the friction coefficient of the substrate 101 and the transport roller 91a can be reduced, and the contraction of the substrate 101 due to cooling in the width direction X can be accommodated. When the conveyance roller 91a is stationary, even if the friction coefficient is high and the shrinkage of the substrate cannot be allowed, the friction coefficient can be reduced by rotating the conveyance roller 91a, and the substrate 101 can be easily shifted in the width direction X. Therefore, when the substrate 101 is cooled and reduced, the end portion of the substrate 101 in the width direction X is shifted inward, so that the tensile stress generated on the substrate 101 can be alleviated. As a result, the possibility that the substrate 101 is broken can be reduced.
並且，成膜裝置100的基板傳送控制單元20使傳送輥91a旋轉360度之後，逆向旋轉360度，因此，能夠使傳送輥91a反覆進行一圈正旋轉與一圈逆旋轉的操作的同時，使基板101往返移動，並能夠抑制傳送輥91a在周面上的溫度差，還能夠抑制與傳送輥91a接觸之基板101內的溫度差。Further, the substrate transfer control unit 20 of the film forming apparatus 100 rotates the transport roller 91a by 360 degrees and then rotates 360 degrees in the reverse direction. Therefore, the transport roller 91a can repeatedly perform one rotation of positive rotation and one rotation of reverse rotation. The substrate 101 is reciprocated, and the temperature difference of the transport roller 91a on the circumferential surface can be suppressed, and the temperature difference in the substrate 101 in contact with the transport roller 91a can be suppressed.
並且，在成膜基板製造方法的(第2)傳送製程中，由於使傳送輥91a旋轉360度之後逆向旋轉360度，因此 ，能夠使傳送輥91a反覆進行一圈正旋轉與一圈逆旋轉的操作的同時，使基板101往返移動，並能夠抑制傳送輥91a在周面上的溫度差，還能夠抑制與傳送輥91a接觸之基板101內的溫度差。Further, in the (second) transfer process of the film formation substrate manufacturing method, since the transport roller 91a is rotated 360 degrees and then rotated 360 degrees in the reverse direction, The transfer roller 91a can perform the operation of one rotation of one rotation and one rotation of the reverse rotation, and the substrate 101 can be reciprocated, and the temperature difference of the conveyance roller 91a on the circumferential surface can be suppressed, and the contact with the conveyance roller 91a can be suppressed. The temperature difference in the substrate 101.
以上，根據其實施方式具體說明了本發明，但是本發明不限定於上述實施方式。上述實施方式中，以正旋轉與逆旋轉方式切換設置在緩衝腔室122內之傳送輥91a的旋轉並使基板101往返移動，但亦可以以正旋轉與逆旋轉方式切換設置在其他腔室內之傳送輥91a的旋轉並使基板101往返移動。例如，於裝入鎖定腔室121內，可在加熱基板時使基板101往返移動。The present invention has been specifically described above based on the embodiments thereof, but the present invention is not limited to the above embodiments. In the above embodiment, the rotation of the transport roller 91a provided in the buffer chamber 122 is switched between the forward rotation and the reverse rotation, and the substrate 101 is reciprocated, but the positive rotation and the reverse rotation may be switched between the other chambers. The rotation of the conveying roller 91a causes the substrate 101 to reciprocate. For example, in the loading lock chamber 121, the substrate 101 can be reciprocated while the substrate is being heated.
並且，上述實施方式中，以正旋轉與逆旋轉方式切換設置在緩衝腔室124內之傳送輥91a的旋轉並使基板101往返移動，但是可藉由以正旋轉與逆旋轉方式切換設置在其他腔室內之傳送輥91a的旋轉並使基板101往返移動。Further, in the above-described embodiment, the rotation of the transport roller 91a provided in the buffer chamber 124 is switched in the forward rotation and the reverse rotation manner, and the substrate 101 is reciprocated, but can be switched by the positive rotation and the reverse rotation. The rotation of the conveying roller 91a in the chamber causes the substrate 101 to reciprocate.
並且，上述實施方式中，作為加熱器92利用向基板101的寬度方向X延伸之燈式加熱器進行加熱，但是亦可利用其他加熱手段(例如碳加熱器)加熱基板101。並且，加熱器92延伸之方向不限定於基板101的寬度方向X，可利用向傳送方向Y延伸之加熱器加熱基板101。並且亦可為加熱基板101的下面之結構。Further, in the above-described embodiment, the heater 92 is heated by the lamp heater extending in the width direction X of the substrate 101. However, the substrate 101 may be heated by another heating means (for example, a carbon heater). Further, the direction in which the heater 92 extends is not limited to the width direction X of the substrate 101, and the substrate 101 can be heated by a heater extending in the transport direction Y. Further, it is also possible to heat the structure of the lower surface of the substrate 101.
並且，上述實施方式中，利用冷卻板93冷卻基板101，但是亦可利用其他冷卻手段冷卻基板101。並且，亦可為冷卻基板101的下面之結構。Further, in the above embodiment, the substrate 101 is cooled by the cooling plate 93, but the substrate 101 may be cooled by another cooling means. Further, the structure of the lower surface of the substrate 101 may be cooled.
並且，上述實施方式中，加熱基板時，使基板101往返移動相當於加熱器92的配置間隔P的大致60%~大致100%的距離之量，但是基板101往返移動之距離可為間隔P的60%以下，亦可為間隔P以上。Further, in the above-described embodiment, when the substrate is heated, the substrate 101 is reciprocated by an amount corresponding to a distance of approximately 60% to approximately 100% of the arrangement interval P of the heaters 92. However, the distance between the substrate 101 and the reciprocating movement may be the interval P. 60% or less, or more than the interval P.
並且，上述實施方式中，冷卻基板時，使傳送輥91a旋轉360度之後，逆向旋轉360度，但是傳送輥91a的旋轉角度不限定於360度，可按不到一圈的旋轉角度往返移動基板101，亦可按大於1圈之旋轉角度往返移動基板101。Further, in the above-described embodiment, when the substrate is cooled, the transport roller 91a is rotated 360 degrees and then rotated 360 degrees in the reverse direction. However, the rotation angle of the transport roller 91a is not limited to 360 degrees, and the substrate can be reciprocated at a rotation angle of less than one turn. 101. The substrate 101 can also be moved back and forth at a rotation angle greater than one turn.
並且，成膜腔室及成膜製程中的成膜法不限定於濺射法，亦可應用其他成膜法(例如離子鍍法等)。Further, the film formation method in the film formation chamber and the film formation process is not limited to the sputtering method, and other film formation methods (for example, ion plating method) may be applied.
並且，亦可為僅在加熱時或冷卻時往返移動基板101的結構。Further, it is also possible to reciprocate the substrate 101 only during heating or cooling.
20‧‧‧基板傳送控制單元20‧‧‧Substrate transfer control unit
91a‧‧‧傳送輥91a‧‧‧Transfer roller
92‧‧‧加熱器(加熱手段)92‧‧‧heater (heating means)
93‧‧‧冷卻板(冷卻手段)93‧‧‧Cooling plate (cooling means)
100‧‧‧成膜裝置100‧‧‧ film forming device
101‧‧‧基板101‧‧‧Substrate
121、125‧‧‧裝入鎖定腔室121, 125‧‧‧Load lock chamber
122、124‧‧‧緩衝腔室122, 124‧‧‧ buffer chamber
123‧‧‧成膜腔室123‧‧‧filming chamber
第1圖係表示本發明的實施方式之成膜裝置之概要側視圖。Fig. 1 is a schematic side view showing a film forming apparatus according to an embodiment of the present invention.
第2圖係本發明的實施方式之成膜裝置的緩衝腔室(加熱用)的截面圖，係表示沿基板傳送方向切斷之狀態者。Fig. 2 is a cross-sectional view showing a buffer chamber (for heating) of the film forming apparatus according to the embodiment of the present invention, showing a state of being cut in the substrate transport direction.
第3圖係本發明的實施方式之成膜裝置的緩衝腔室(加熱用)的截面圖，係是表示沿與基板傳送方向正交之方向切斷之狀態者。Fig. 3 is a cross-sectional view showing a buffer chamber (for heating) of the film forming apparatus according to the embodiment of the present invention, showing a state of being cut in a direction orthogonal to the substrate transport direction.
第4圖係放大表示第3圖中的基板、傳送輥之圖。Fig. 4 is an enlarged view showing the substrate and the conveying roller in Fig. 3;
第5圖係本發明的實施方式之成膜裝置的緩衝腔室(冷卻用)的截面圖，係表示沿基板傳送方向切斷之狀態者。Fig. 5 is a cross-sectional view showing a buffer chamber (for cooling) of the film forming apparatus according to the embodiment of the present invention, showing a state of being cut in the substrate transport direction.
第6圖係表示本發明的實施方式之成膜裝置的基板傳送控制單元之塊結構圖。Fig. 6 is a block configuration diagram showing a substrate transfer control unit of the film forming apparatus of the embodiment of the present invention.
第7圖係基板的俯視圖，是表示基板與傳送輥的接點的位置之圖。Fig. 7 is a plan view showing the position of the substrate and the transfer roller.
122‧‧‧緩衝腔室122‧‧‧buffer chamber
121‧‧‧裝入鎖定腔室121‧‧‧Load lock chamber
132‧‧‧開閉閘132‧‧‧Opening and closing
92‧‧‧加熱器92‧‧‧heater
P‧‧‧間隔P‧‧‧ interval
101‧‧‧基板101‧‧‧Substrate
123‧‧‧成膜腔室123‧‧‧filming chamber
133‧‧‧開閉閘133‧‧‧Opening and closing
91a‧‧‧輥91a‧‧‧roll
95‧‧‧真空儀95‧‧‧Vacuum
96‧‧‧真空排氣管96‧‧‧Vacuum exhaust pipe
91‧‧‧傳送裝置91‧‧‧Conveyor
X‧‧‧基板的寬度方向X‧‧‧The width direction of the substrate
Y‧‧‧基板的傳送方向Y‧‧‧Transfer direction of the substrate
Claims (12)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011040268A JP2012177151A (en) | 2011-02-25 | 2011-02-25 | Film deposition device, and method for producing film deposition substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201241196A TW201241196A (en) | 2012-10-16 |
| TWI465594B true TWI465594B (en) | 2014-12-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101105866A TWI465594B (en) | 2011-02-25 | 2012-02-22 | Film forming apparatus and film forming substrate manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2012177151A (en) |
| KR (1) | KR20120098444A (en) |
| CN (1) | CN102650045A (en) |
| TW (1) | TWI465594B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053454A (en) * | 2006-08-24 | 2008-03-06 | Dainippon Printing Co Ltd | Baking apparatus and baking method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59199036A (en) * | 1983-04-26 | 1984-11-12 | Fuji Electric Corp Res & Dev Ltd | Device for forming thin film |
| JP3157108B2 (en) * | 1996-08-26 | 2001-04-16 | 株式会社ノリタケカンパニーリミテド | Method and apparatus for firing a substrate containing a film forming material |
| JPH10140351A (en) * | 1996-11-05 | 1998-05-26 | Kobe Steel Ltd | Inline type vacuum film forming device |
| JP4417221B2 (en) * | 2004-10-18 | 2010-02-17 | 株式会社フューチャービジョン | Substrate cooling device |
| JP4576370B2 (en) * | 2006-10-20 | 2010-11-04 | 三菱重工業株式会社 | Vapor deposition apparatus and vapor deposition method |
| JP4761326B2 (en) * | 2010-01-15 | 2011-08-31 | シャープ株式会社 | Thin film forming apparatus system and thin film forming method |
-
2011
- 2011-02-25 JP JP2011040268A patent/JP2012177151A/en active Pending
-
2012
- 2012-02-20 CN CN2012100389909A patent/CN102650045A/en active Pending
- 2012-02-22 TW TW101105866A patent/TWI465594B/en not_active IP Right Cessation
- 2012-02-22 KR KR1020120017727A patent/KR20120098444A/en not_active Application Discontinuation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008053454A (en) * | 2006-08-24 | 2008-03-06 | Dainippon Printing Co Ltd | Baking apparatus and baking method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012177151A (en) | 2012-09-13 |
| CN102650045A (en) | 2012-08-29 |
| KR20120098444A (en) | 2012-09-05 |
| TW201241196A (en) | 2012-10-16 |
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