CN102629558B - 低温多晶硅薄膜晶体管制造方法 - Google Patents
低温多晶硅薄膜晶体管制造方法 Download PDFInfo
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- CN102629558B CN102629558B CN201210004411.9A CN201210004411A CN102629558B CN 102629558 B CN102629558 B CN 102629558B CN 201210004411 A CN201210004411 A CN 201210004411A CN 102629558 B CN102629558 B CN 102629558B
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- Prior art keywords
- amorphous silicon
- silicon layer
- layer
- film transistor
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 127
- 238000000034 method Methods 0.000 claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000005224 laser annealing Methods 0.000 claims abstract description 23
- 229920005591 polysilicon Polymers 0.000 claims description 63
- 230000008569 process Effects 0.000 claims description 22
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001257 hydrogen Substances 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 7
- 238000007670 refining Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 131
- 239000010408 film Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- -1 boron ion Chemical class 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210004411.9A CN102629558B (zh) | 2012-01-09 | 2012-01-09 | 低温多晶硅薄膜晶体管制造方法 |
TW101110197A TWI492315B (zh) | 2012-01-09 | 2012-03-23 | 低溫多晶矽薄膜晶體管製造方法 |
Applications Claiming Priority (1)
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CN201210004411.9A CN102629558B (zh) | 2012-01-09 | 2012-01-09 | 低温多晶硅薄膜晶体管制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN102629558A CN102629558A (zh) | 2012-08-08 |
CN102629558B true CN102629558B (zh) | 2015-05-20 |
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CN201210004411.9A Expired - Fee Related CN102629558B (zh) | 2012-01-09 | 2012-01-09 | 低温多晶硅薄膜晶体管制造方法 |
Country Status (2)
Country | Link |
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CN (1) | CN102629558B (zh) |
TW (1) | TWI492315B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103247519B (zh) * | 2013-04-26 | 2016-01-20 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜、薄膜晶体管、其制备方法及显示面板 |
CN103700695B (zh) * | 2013-12-25 | 2017-11-03 | 深圳市华星光电技术有限公司 | 低温多晶硅薄膜及其制备方法、晶体管 |
CN103985637B (zh) | 2014-04-30 | 2017-02-01 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管及其制作方法和显示装置 |
CN104078365A (zh) * | 2014-06-20 | 2014-10-01 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制造方法、tft、阵列基板及显示装置 |
CN105097669B (zh) * | 2015-07-13 | 2019-05-03 | 深圳市华星光电技术有限公司 | 一种显示面板及其制造方法 |
CN106098628B (zh) * | 2016-06-07 | 2019-04-02 | 深圳市华星光电技术有限公司 | Tft背板的制作方法及tft背板 |
CN106847675B (zh) * | 2017-04-21 | 2020-03-31 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜及其制备方法、薄膜晶体管和显示面板 |
CN107863355B (zh) * | 2017-10-26 | 2022-01-25 | 上海中航光电子有限公司 | 一种显示基板、显示装置和显示基板的制造方法 |
CN107919270A (zh) * | 2017-11-03 | 2018-04-17 | 惠科股份有限公司 | 低温多晶硅薄膜及晶体管的制造方法 |
CN107833835B (zh) * | 2017-11-03 | 2019-08-06 | 惠科股份有限公司 | 低温多晶硅薄膜及晶体管的制造方法 |
CN107887275B (zh) | 2017-11-03 | 2019-07-19 | 惠科股份有限公司 | 低温多晶硅薄膜及晶体管的制造方法 |
CN108281350B (zh) * | 2018-01-23 | 2020-09-01 | 武汉华星光电半导体显示技术有限公司 | 固相结晶方法与低温多晶硅tft基板的制作方法 |
US10515800B2 (en) | 2018-01-23 | 2019-12-24 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Solid phase crystallization method and manufacturing method of low-temperature poly-silicon TFT substrate |
CN108417478B (zh) * | 2018-03-13 | 2020-12-22 | 信利(惠州)智能显示有限公司 | 多晶硅薄膜的制备方法、薄膜晶体管及其制备方法 |
CN113921661B (zh) * | 2021-09-23 | 2023-12-01 | 理想万里晖半导体设备(上海)股份有限公司 | 用于制造异质结太阳能电池的方法及异质结太阳能电池 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435908A (en) * | 1987-07-30 | 1989-02-07 | Ricoh Kk | Formation of polysilicon film |
JPH11204794A (ja) * | 1998-01-08 | 1999-07-30 | Matsushita Electric Ind Co Ltd | 低温ポリシリコンtftの製造プロセスにおけるポリシリコン膜の形成方法 |
TWI222752B (en) * | 2003-03-07 | 2004-10-21 | Au Optronics Corp | Method for manufacturing a thin film transistor |
JP2006024736A (ja) * | 2004-07-08 | 2006-01-26 | Seiko Instruments Inc | 多結晶シリコン系薄膜の形成方法、及び、表示装置の製造方法 |
CN100386885C (zh) * | 2004-07-22 | 2008-05-07 | 友达光电股份有限公司 | 低温多晶硅薄膜晶体管及其制造方法 |
US7521341B2 (en) * | 2005-11-09 | 2009-04-21 | Industrial Technology Research Institute | Method of direct deposition of polycrystalline silicon |
KR100864884B1 (ko) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 |
TW200905730A (en) * | 2007-07-23 | 2009-02-01 | Ind Tech Res Inst | Method for forming a microcrystalline silicon film |
JP5371341B2 (ja) * | 2007-09-21 | 2013-12-18 | 株式会社半導体エネルギー研究所 | 電気泳動方式の表示装置 |
-
2012
- 2012-01-09 CN CN201210004411.9A patent/CN102629558B/zh not_active Expired - Fee Related
- 2012-03-23 TW TW101110197A patent/TWI492315B/zh not_active IP Right Cessation
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Publication number | Publication date |
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CN102629558A (zh) | 2012-08-08 |
TW201330112A (zh) | 2013-07-16 |
TWI492315B (zh) | 2015-07-11 |
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C06 | Publication | ||
PB01 | Publication | ||
C53 | Correction of patent of invention or patent application | ||
CB03 | Change of inventor or designer information |
Inventor after: Xu Minqing Inventor after: Wu Zhaopeng Inventor after: Zhuang Tucheng Inventor after: Yu Hongzhi Inventor after: Lv Hongzhe Inventor before: Xu Minqing Inventor before: Wu Zhaopeng Inventor before: Zhuang Tucheng Inventor before: Yu Hongzhi Inventor before: Wu Hongzhe |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: XU MINQING WU ZHAOPENG ZHUANG TUCHENG YU HONGZHI WU HONGZHE TO: XU MINQING WU ZHAOPENG ZHUANG TUCHENG YU HONGZHI LV HONGZHE |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 |
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CF01 | Termination of patent right due to non-payment of annual fee |