CN106816354B - A kind of lower electrode and reaction chamber - Google Patents
A kind of lower electrode and reaction chamber Download PDFInfo
- Publication number
- CN106816354B CN106816354B CN201510872794.5A CN201510872794A CN106816354B CN 106816354 B CN106816354 B CN 106816354B CN 201510872794 A CN201510872794 A CN 201510872794A CN 106816354 B CN106816354 B CN 106816354B
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- lower electrode
- dielectric constant
- electrode interface
- interface disk
- adjustment block
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a kind of lower electrode and reaction chambers, lower electrode includes electrostatic chuck and the lower electrode interface disk that is set to below electrostatic chuck, lower electrode interface disk is for installing the element interface connecting with electrostatic chuck, lower electrode interface disk includes lower electrode interface disk ontology, the receiving portion being arranged on lower electrode interface disk, lower electrode interface disk further includes the local dielectric constant adjustment block different from the dielectric constant of lower electrode interface disk, receiving portion is for accommodating local dielectric constant adjustment block, the dielectric constant of electrode interface disk under being adjusted by selectively accommodating local dielectric constant adjustment block in receiving portion.The local dielectric constant of the interface disc of lower electrode of the invention can be adjusted in a certain range, it is distributed so as to improve the dielectric constant of lower electrode interface disk, by adjusting the localized capacitance of lower electrode interface disk, fractional radio frequency's intensity of adjustable lower electrode interface disk, to adjust local etching or deposition rate, uniformity when wafer engraving or deposition is improved.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to a kind of lower electrode and reaction chamber.
Background technique
Plasma apparatus is widely used in integrated circuit (IC) or the manufacturing process of MEMS device, one of them is significant
Purposes be exactly inductively coupled plasma body (ICP) device.In plasma containing a large amount of electronics, ion, excitation state original
Son, molecule and free radical isoreactivity particle, these active particles and substrate interaction make material surface occur various physics and
Chemical reaction, so that material surface property be made to be changed.In the manufacture based on semiconductor device, multilayer material can be handed over
That replaces deposits to substrate surface and etches the multilayer material from substrate surface.
Electrostatic chuck (Electro Static Chuck abbreviation ESC) is widely used in integrated circuit (IC) manufacturing process
In the process, especially techniques such as plasma etching (ETCH), physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), are used for
Fixed in reaction chamber, support and transmission chip (Wafer)；Dc bias is provided for chip and controls the temperature of wafer surface
Degree.
Into after 32-22 nm technology generation, high-K gate dielectric and metal gate electrode MOS device are introduced into IC production technology, carve
Erosion uniformity needs further increase, when the uniformity (3 σ) of wafer-in-wafer transistor gate length is by 45nm node
3nm is reduced to the 1.56nm of 32nm node；Grid width CD etching homogeneity is codetermined by photoresist trimming and etching technics,
Its permitted 3 σ about 0.78nm, wherein 3 σ need < 0.64nm caused by grid etch.Simple carries out temperature for electrostatic chuck
Degree control, is unable to satisfy the requirement to center and etching edge uniformity of 32-22 nanotechnology, needs to introduce new technology and mention
High etching homogeneity.
As shown in Figure 1, lower electrode 1 includes electrostatic chuck 2, the lower electrode interface disk for being set to 2 lower section of electrostatic chuck
7, it is set to total pedestal 14 of 7 lower section of lower electrode interface disk.Electrostatic chuck 2 is carried processed by the way of electrostatic attraction
Workpiece, such as chip 13 (substrate).Typical electrostatic chuck 2 (low temperature electrostatic chuck) mainly consists of two parts: (1) insulating layer
3, (2) electrostatic chuck body base 4.There are also silica gel 5, insulating layers 3 usually between insulating layer 3 and electrostatic chuck body base 4
It is Nian Jie with electrostatic chuck body base 4 by silica gel 5.Insulating layer 3 uses ceramic material (Al at present2O3, AlN etc.) processing and manufacturing
Or the form of ceramic spraying is manufactured, DC electrode layer is imbedded in insulating layer 3 by way of being sintered or spraying, electrostatic card
Disk 2 is exactly to achieve the purpose that fixed wafer 13 using the electrostatic attraction generated between DC electrode layer and chip 13.Electrostatic chuck
Body base 4 is used to supports insulative layer 3, imports radio-frequency power supply (RF), forms RF bias, inside has cooling water channel, in cooling water channel
It is inside passed through circulating cooling liquid, the temperature and flow of circulating cooling liquid are controlled by cooler (Chiller), realized to electrostatic chuck
2 temperature control, so that chip 13 reaches assigned temperature.Also there is corresponding interface position on electrostatic chuck body base 4.
Lower electrode interface disk 7 is located under electrostatic chuck 2, for the coolant liquid of electrostatic chuck 2, helium, purge gas etc.
Input and output interface installation, certainly, lower electrode interface disk 7 can be also used for the electrical components such as heat sensor, rise needle system, under
The installation such as radio frequency connecting column, meanwhile, lower electrode interface disk 7 is also used for fixed electrostatic chuck 2.The material packet of lower electrode interface disk 7
The oxide layer for including material of main part metal and being set to outside the material of main part metal.Lower electrode interface disk 7 generally using aluminium or its
Its metal is processed, while surface carries out oxidation processes, and oxide layer is generally insulator, therefore lower electrode interface disk 7 is whole
The electrical characteristics and poor conductor shown, but have certain impedance operator, in radio frequency environment, a part of RF energy can lead to
Cross down electrode interface disk 7.Since lower electrode interface disk 7 is processed using the material of single mean value, except lower electrode interface disk 7 installs institute
Consistency of thickness everywhere is stated outside 6 position of interface of electrostatic chuck, therefore impedance is almost the same everywhere on circumferencial direction, to cause down
As influence of the impedance everywhere of electrode interface disk 7 to lower 1 electric field of electrode.Since lower 1 field distribution of electrode and plasma are distributed
Be positively correlated, though therefore the lower electrode interface disk 7 of the prior art can influence field distribution, be not adjustable field distribution and then adjust
The etching homogeneity of chip 13.
Summary of the invention
The technical problem to be solved by the present invention is to aiming at the above shortcomings existing in the prior art, provide a kind of lower electrode
And reaction chamber, the local dielectric constant of the interface disc of lower electrode of the invention can be adjusted in a certain range, thus
Improve the dielectric constant distribution of lower electrode interface disk, by adjusting the localized capacitance of lower electrode interface disk, adjustable lower electrode
Fractional radio frequency's intensity of interface disc.
It solves technical solution used by present invention problem and is to provide a kind of lower electrode, lower electrode includes electrostatic chuck
With the lower electrode interface disk being set to below the electrostatic chuck, the lower electrode interface disk is for installing and the electrostatic chuck
The element interface of connection, the lower electrode interface disk include lower electrode interface disk ontology, are arranged on the lower electrode interface disk
Receiving portion, the lower electrode interface disk further include that the partial dielectric different from the dielectric constant of the lower electrode interface disk ontology is normal
Number adjustment block, described accommodation section is for accommodating the local dielectric constant adjustment block, by selectively holding in described accommodation section
The local dielectric constant adjustment block is received to adjust the dielectric constant of the lower electrode interface disk.The interface portion of the electrostatic chuck
Part includes the input interface of coolant liquid, the output interface of coolant liquid, the input interface of helium, the output interface of helium, purge gass
The output interface of the input interface of body, purge gas.
Preferably, described accommodation section is blind hole, and the local dielectric constant adjustment block is from the lower electrode interface disk
Side insertion described accommodation section.
It is further preferred that the bottom surface of the blind hole is one or more of circle, rectangle, triangle.
Preferably, described accommodation section is through-hole, and the local dielectric constant adjustment block is arranged in described accommodation section.
It is further preferred that the floor space of described accommodation section is less than the floor space of the local dielectric constant adjustment block, it is described
Local dielectric constant adjustment block can be stuck in described accommodation section；Or the local dielectric constant adjustment block includes clamping portion, institute
Stating clamping portion is stuck in the local dielectric constant adjustment block in described accommodation section.
Preferably, the material of the lower electrode interface disk ontology includes material of main part metal and is set to the main body material
Expect the insulating layer outside metal.
Preferably, the material of the local dielectric constant adjustment block is one of ceramics, quartz, silicon carbide.
Preferably, the material of the local dielectric constant adjustment block is ceramics.
Preferably, described accommodation section is arranged in the form of concentric circles on the lower electrode interface disk, makes it possible to hold
The local dielectric constant adjustment block being contained in described accommodation section is arranged in the form of concentric circles.
Preferably, on the lower electrode interface disk by the outside described accommodation section in center distribution density by as low as
It is high.
Preferably, the local dielectric constant accommodated on the lower electrode interface disk by the outside described accommodation section in center
The dielectric constant of adjustment block is from low to high.
Preferably, the lower electrode further includes aluminum base and the setting being set to below the lower electrode interface disk
Pedestal below the aluminum base, the aluminum base and the pedestal are detachably connected, the lower electrode interface disk, institute
State aluminum base, the pedestal forms accommodation space, which is used to accommodate to pass through from the interface of the electrostatic chuck
Component.
The present invention also provides a kind of reaction chamber, above-mentioned lower electrode is provided in the reaction chamber.
The present invention designs a kind of lower electrode, and the local dielectric constant of lower electrode interface disk can carry out in a certain range
Adjustment is distributed so as to improve the dielectric constant of lower electrode interface disk, by adjusting the localized capacitance of lower electrode interface disk, can adjust
The fractional radio frequency's intensity for saving lower electrode interface disk improves wafer engraving to adjust local etching or deposition rate
Or uniformity when deposition.
Detailed description of the invention
Fig. 1 is the sectional view of the lower electrode in background of invention；
Fig. 2 is 1 equivalent circuit diagram of lower electrode of etching apparatus；
Fig. 3 is the sectional view of the lower electrode interface disk in the embodiment of the present invention 1；
Fig. 4 is the sectional view of the lower electrode interface disk in the embodiment of the present invention 1；
Fig. 5 is the top view of the lower electrode interface disk in the embodiment of the present invention 1；
Fig. 6 is the sectional view of the lower electrode in the embodiment of the present invention 1.
In figure: electrode under 1-；2- electrostatic chuck；3- insulating layer；4- electrostatic chuck body base；5- silica gel；6- element connects
Mouthful；Electrode interface disk under 7-；Electrode interface disk ontology under 8-；Electrode edge ring under 9-；10- local dielectric constant adjustment block；11-
Blind hole；12- through-hole；13- chip；The total pedestal of 14-；15- aluminum base；16- pedestal.
Specific embodiment
Technical solution in order to enable those skilled in the art to better understand the present invention, with reference to the accompanying drawing and specific embodiment party
Present invention is further described in detail for formula.
Embodiment 1
As illustrated in figures 3-6, the present embodiment provides a kind of lower electrode 1, lower electrode 1 includes electrostatic chuck 2 and is set to described
The lower electrode interface disk 7 of 2 lower section of electrostatic chuck, the lower electrode interface disk 7 is for installing the member connecting with the electrostatic chuck 2
Part interface 6, the lower electrode interface disk 7 include lower electrode interface disk ontology 8, the receiving being arranged on the lower electrode interface disk 7
Portion, the lower electrode interface disk 7 further include the local dielectric constant different from the dielectric constant of the lower electrode interface disk ontology 8
Adjustment block 10, described accommodation section pass through the selectivity in described accommodation section for accommodating the local dielectric constant adjustment block 10
The local dielectric constant adjustment block 10 is accommodated to adjust the dielectric constant of the lower electrode interface disk 7.When using lower electrode 1,
Local dielectric constant adjustment block 10 is inserted into from the overthe openings of the receiving portion of lower electrode interface disk 7, electrostatic chuck 2 is installed later
To fixed local dielectric constant adjustment block 10.
1 equivalent circuit diagram of lower electrode of typical etching apparatus is as shown in Fig. 2, in radio frequency environment, lower electrode interface disk 7
There are equivalent capacitys, so that radio frequency generates a part of branch, to consume a part of RF energy.Lower electrode interface disk 7
Equivalent capacity can be according to the capacitor calculation formula C of plane-parallel capacitorinterface=f (ε, s, d) is calculated.Wherein, ε is lower electrode
The dielectric constant of interface disc 7, s are the disk open area of lower electrode interface disk 7,dFor the thickness of lower electrode interface disk 7.Due to general
The thickness of lower electrode interface disk 7 is constant, therefore the calculation formula of the localized capacitance of lower electrode interface disk 7 are as follows: dCinterface/ ds=
g(ε(s)).It follows that the variable for adjusting the localized capacitance distribution of lower electrode interface disk 7 only adjusts corresponding lower electrode
The local dielectric constant ε (s) of interface disc 7.Therefore the present embodiment devises a kind of lower electrode 1, the part of lower electrode interface disk 7
Dielectric constant can be adjusted in a certain range, be distributed so as to improve the dielectric constant of lower electrode interface disk 7, by adjusting
The localized capacitance of lower electrode interface disk 7, fractional radio frequency's intensity of adjustable lower electrode interface disk 7, to adjust local quarter
Rate is lost, uniformity when chip 13 etches is improved.Certainly, it is heavy to can be used for physical vapor for lower electrode interface disk 7
The techniques such as product (PVD), chemical vapor deposition (CVD).
Preferably, described accommodation section is blind hole 11, and the local dielectric constant adjustment block 10 is from the lower electrode interface
Described accommodation section is inserted into above disk 7.Workpiece to be machined in specific the present embodiment is chip 13, and chip 13 is placed on electrostatic card
On disk 2, the periphery of electrostatic chuck 2 and chip 13 is arranged in lower electrode edge ring 9.
It is further preferred that the bottom surface of the blind hole 11 is one or more of circle, rectangle, triangle.
As shown in figure 3, the blind hole 11 is blind circular hole it is further preferred that the bottom surface of the blind hole 11 is circle.Blind circular hole
It processes more convenient.
As shown in Figure 4, it is preferred that described accommodation section is through-hole 12, and the setting of local dielectric constant adjustment block 10 exists
In described accommodation section.
It is further preferred that the floor space of described accommodation section is less than the floor space of the local dielectric constant adjustment block 10, institute
Stating local dielectric constant adjustment block 10 can be stuck in described accommodation section；Or the local dielectric constant adjustment block 10 includes clamping
Portion, the clamping portion are stuck in the local dielectric constant adjustment block 10 in described accommodation section.
Preferably, the material of the lower electrode interface disk 7 is aluminium.Interface disk material used by the present embodiment is aluminium,
It is whole that dielectric characteristic is presented due to surface oxidation characteristic.
Preferably, the material of the local dielectric constant adjustment block 10 is one of ceramics, quartz, silicon carbide.When
When the dielectric constant of lower electrode interface disk 7 does not need adjustment, the material of the local dielectric constant adjustment block 10 may be aluminium,
Carry out installation balance dielectric constant.
Preferably, the material of the local dielectric constant adjustment block 10 is ceramics.
Preferably, described accommodation section is arranged in the form of concentric circles on the lower electrode interface disk 7, makes it possible to hold
The local dielectric constant adjustment block 10 being contained in described accommodation section is arranged in the form of concentric circles.Silicon wafer in the ideal case
Etch rate is to increase from center to edge gradient in the form of concentric circles, therefore the front of lower electrode interface disk ontology 8 is with same
The form of heart circle squeezes into uniformly distributed blind circular hole, since the interface of lower electrode interface disk 7 being distributed on lower electrode interface disk 7, so
The position of blind circular hole need to avoid the element interface 6 of the electrostatic chuck of lower electrode interface disk 7.
Preferably, on the lower electrode interface disk 7 by the outside described accommodation section in center distribution density by as low as
It is high.
Preferably, the partial dielectric accommodated on the lower electrode interface disk 7 by the outside described accommodation section in center is normal
The dielectric constant of number adjustment block 10 is from low to high.For plasma etch apparatus, due to electrode lower in the case of high dielectric constant
The local equivalents capacitor of interface disc 7 becomes larger, and bias voltage increases, so that etch rate reduces, conversely, low-k feelings
Local etching rate is lower under condition, adjusts the etching homogeneity of chip 13 by adjusting local etching rate.
The setting of receiving portion on lower electrode interface disk 7 is distributed intensive as far as possible, appearance depending on actual design working ability
Receive portion height according to the material properties of concrete technology and local dielectric constant adjustment block 10 pass through calculate local dielectric constant
It is fixed.Such as: ceramic partially dielectric constant adjustment block 10 is put into receiving portion, the material of lower electrode interface disk 7 is aluminium, due to ceramics
Dielectric constant be higher than the dielectric constant that shows of interface disc integral body alumina-base material, pass through and change lower 7 innings of electrode interface disk
It is equal can to improve etching to have adjusted the Energy distribution of radio frequency for plasma etch apparatus for the dielectric constant in portion
Even property.Meanwhile the local dielectric constant adjustment block 10 of unlike material can mashed up insertion receiving portion, for example, for plasma
Etching apparatus is inserted into the local dielectric constant tune of advanced low-k materials in the receiving portion in lower 7 centre of electrode interface disk
Monolith 10 is to adjust etch rate further to which the adjustable range of integral energy distribution increases.Plane-parallel capacitor capacitor calculates
Formula are as follows: Cinterface=ε s/d, according to formula, under same distance parallel-plate, the high local localized capacitance of permittivity ε is high, is situated between
Electric constant ε low local localized capacitance is low, and its is linear, and localized capacitance it is high local etch rate it is low, part electricity
It is high to hold low local etch rate.When actually using lower electrode interface disk 7, it is put into the higher corresponding receiving portion of etch rate
The local dielectric constant adjustment block 10 of high dielectric constant is put into low-k in the lower corresponding receiving portion of etch rate
Local dielectric constant adjustment block 10.According to Cinterface=ε s/d can pass through the depth and local dielectric constant of increase receiving portion
The height of adjustment block 10 is adjusted.The distribution density in hole is higher simultaneously, and aperture is smaller, and it is higher to adjust fineness.
Specifically, the lower electrode interface disk 7 in the present embodiment is widely used in integrated circuit (IC) process for making
In, especially techniques such as plasma etching (ETCH), physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD).
As shown in Figure 6, it is preferred that the lower electrode 1 further includes the aluminium for being set to 7 lower section of lower electrode interface disk
Pedestal 15 processed and the pedestal 16 for being set to 15 lower section of aluminum base, the aluminum base 15 and the pedestal 16 detachably connect
It connects, the lower electrode interface disk 7, the aluminum base 15, the pedestal 16 form accommodation space, and the accommodation space is for accommodating
The component passed through from the element interface 6 of the electrostatic chuck.Aluminum base 15 and pedestal 16 use separate structure, can facilitate
Across the installation of the component of the element interface 6 of electrostatic chuck and the disassembly of electrostatic chuck 2.
Workpiece to be machined in specific the present embodiment is chip 13, and chip 13 is placed on electrostatic chuck 2, lower electrode
The periphery of electrostatic chuck 2 and chip 13 is arranged in edge ring 9, and lower electrode edge ring 9 is used to limit position and the constraint of chip 13
Radio frequency passes through region.Lower electrode interface disk 7 is located under electrostatic chuck 2, lower electrode interface disk 7 for electrostatic chuck 2 water route,
Gas circuit is connected with electrical interface.Aluminum base 15 and pedestal 16 and lower electrode interface disk 7 and electrostatic chuck 2 constitute completely
Airtight cavity.
The effect of aluminum base 15 and pedestal 16 is that the component installed by lower electrode interface disk 7 provides installation space, this
It is that can dismantle pedestal 16 to facilitate each portion for safeguarding that lower electrode interface disk 7 is installed from below that the two, which is made into the reason of separate type,
Part.Aluminum base 15, pedestal 16 and lower electrode interface disk 7, electrostatic chuck 22 constitute lower 1 basic structure of electrode.For it is equal from
For sub- etching machine, lower electrode 1 is mounted in the vacuum chamber of plasma etching machine, and external environment is vacuum environment, and described
Component inside airtight cavity need to be guided to outside the vacuum chamber of etching machine, be ordinary atmosphere, therefore need closed.
Embodiment 2
The present embodiment also provides a kind of reaction chamber, the lower electrode being provided in embodiment 1 in the reaction chamber.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of lower electrode, including electrostatic chuck and the lower electrode interface disk being set to below the electrostatic chuck, the lower electricity
Pole interface disc is for installing the element interface connecting with the electrostatic chuck, which is characterized in that the lower electrode interface disk includes
The receiving portion being arranged on lower electrode interface disk ontology, the lower electrode interface disk, the lower electrode interface disk further include with it is described
The different local dielectric constant adjustment block of the dielectric constant of lower electrode interface disk ontology, described accommodation section is for accommodating the part
Dielectric constant adjustment block, wherein the quantity of described accommodation section be it is multiple, the quantity of the local dielectric constant adjustment block with it is described
The quantity of receiving portion is identical, and is arranged in a one-to-one correspondence, by adjusting local dielectric constant adjustment block in different described accommodation sections
Dielectric constant adjusts the dielectric constant of the lower electrode interface disk；Also, described accommodation section is blind hole, and the partial dielectric is normal
Number adjustment block is inserted into described accommodation section above the lower electrode interface disk, alternatively, described accommodation section is through-hole, the part is situated between
Electric constant adjustment block is arranged in described accommodation section.
2. lower electrode according to claim 1, which is characterized in that the material of the lower electrode interface disk ontology includes main body
Material metal and the insulating layer being set to outside the material of main part metal.
3. lower electrode according to claim 1, which is characterized in that the material of the local dielectric constant adjustment block is pottery
One of porcelain, quartz, silicon carbide.
4. lower electrode according to any one of claims 1 to 3, which is characterized in that described accommodation section is in the lower electrode
It arranges in the form of concentric circles on interface disc.
5. lower electrode according to any one of claims 1 to 3, which is characterized in that on the lower electrode interface disk by
The distribution density of the outside described accommodation section in center is from low to high.
6. lower electrode according to any one of claims 1 to 3, which is characterized in that on the lower electrode interface disk by
The dielectric constant for the local dielectric constant adjustment block that the outside described accommodation section in center accommodates is from low to high.
7. lower electrode according to any one of claims 1 to 3, which is characterized in that further include being set to the lower electrode
Aluminum base below interface disc and the pedestal being set to below the aluminum base, the aluminum base and the pedestal are removable
Connection is unloaded, the lower electrode interface disk, the aluminum base, the pedestal form accommodation space, and the accommodation space is for accommodating
The element being connect with the electrostatic chuck.
8. a kind of reaction chamber, which is characterized in that under being provided in the reaction chamber described in claim 1~7 any one
Electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510872794.5A CN106816354B (en) | 2015-12-02 | 2015-12-02 | A kind of lower electrode and reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510872794.5A CN106816354B (en) | 2015-12-02 | 2015-12-02 | A kind of lower electrode and reaction chamber |
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| Publication Number | Publication Date |
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| CN106816354A CN106816354A (en) | 2017-06-09 |
| CN106816354B true CN106816354B (en) | 2019-08-23 |
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| CN201510872794.5A Active CN106816354B (en) | 2015-12-02 | 2015-12-02 | A kind of lower electrode and reaction chamber |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107610999A (en) * | 2017-08-28 | 2018-01-19 | 北京北方华创微电子装备有限公司 | Bottom electrode mechanism and reaction chamber |
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| CN103757608A (en) * | 2014-01-22 | 2014-04-30 | 清华大学 | Gradient impedance module for regulating temperature and power spatial distribution |
| CN104715996A (en) * | 2013-12-13 | 2015-06-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bottom electrode device and plasma machining device |
| CN104768317A (en) * | 2009-10-27 | 2015-07-08 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101477944A (en) * | 2003-02-03 | 2009-07-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| CN104768317A (en) * | 2009-10-27 | 2015-07-08 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
| CN102468208A (en) * | 2010-11-16 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chuck and semiconductor processing device |
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| CN106816354A (en) | 2017-06-09 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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