CN101043784A - Hybrid plasma reactor - Google Patents

Hybrid plasma reactor Download PDF

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Publication number
CN101043784A
CN101043784A CNA2007100868758A CN200710086875A CN101043784A CN 101043784 A CN101043784 A CN 101043784A CN A2007100868758 A CNA2007100868758 A CN A2007100868758A CN 200710086875 A CN200710086875 A CN 200710086875A CN 101043784 A CN101043784 A CN 101043784A
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power
source current
frequency
negative electrode
unit
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CN101043784B (en
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李元默
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Weihai dianmei Shiguang electromechanical Co Ltd
DMS Co Ltd
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Display Manufacturing Services Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
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  • Computer Hardware Design (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Drying Of Semiconductors (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

Provided is a hybrid plasma reactor. The hybrid plasma reactor includes an ICP (Inductively Coupled Plasma) source unit and a bias RF (Radio Frequency) power supply unit. The ICP source unit includes a chamber, an antenna coil unit, and a source power supply unit. The chamber includes a chamber body whose top is opened and a dielectric window covering the opened top of the chamber body. The antenna coil unit is disposed outside of the dielectric window. The source power supply unit supplies a source power to the antenna coil unit. The bias RF power supply unit supplies a bias RF power to a cathode. The cathode is installed within the chamber and mounts a target wafer on its top.

Description

Hybrid plasma reactor
Technical field
The present invention relates to a kind of equipment that in semiconductor fabrication process, uses, and relate in particular to plasma reactor.
Background technology
Normally, the plasma reactor that uses plasma to carry out dry etching process depends on the method for generation plasma in chamber and is classified as capacitively coupled plasma (CCP) type plasma reactor and inductive coupled plasma (ICP) type plasma reactor.As well known in the art, in CCP type plasma reactor, ion flow energy proportional raising that plasma chamber is indoor along with the frequencies go lower of the radio frequency that offers top electrode or negative electrode (RF) power.And in CCP type plasma reactor, ion concentration increases along with the frequency gets higher of the RF power that offers upper electrode or negative electrode.In ICP type plasma reactor, along with the RF power increase that offers aerial coil can provide low ionization condition and high ionization condition in chamber.The degree of ionization of reacting gas (degree of dissociation) is lower in low ionization condition, and higher in the high ionization condition.When ICP type plasma reactor was carried out etch process under each low ionization condition and high ionization condition, target wafer demonstrated mutually different physical attribute.In particular, when ICP type plasma reactor was carried out etch process under low ionization condition, target wafer demonstrated the physical attribute that is similar to when CCP type plasma reactor is carried out etch process.When ICP type plasma reactor is carried out etch process under the high ionization condition, along with the frequency of the bias RF power that offers negative electrode becomes lower, the increase that offers the RF power of aerial coil causes the unexpected reduction of the plasma ion energy in the chamber.
Dry etching process for using plasma to realize exists insulation film (oxide) etch process and polyethylene (poly)/metal etching process.The insulation film etch process is mainly based on physical etch technology.Therefore, insulation film mainly uses narrow crack CCP type plasma reactor to carry out etching, and wherein multi-frequency RF power is provided for top electrode or negative electrode.The advantage of this CCP type plasma reactor is to use high electric field to produce high energy ion.Yet CCP type plasma reactor has caused because the process unit that ion collision causes damages, and has caused because the electric arc problem that the characteristic of higher ion bulk potential causes.Low ionization has reduced the efficient of real time chamber cleaning (ICC), and therefore, be embodied as very short average time between the chamber clean (MTBC).CCP type plasma reactor is in hardware designs and provide high-frequency power to existing problems aspect the required cost of top electrode or negative electrode.
Different with the insulation film etch process, the polyethylene/metal etching process based on relative chemical etching mode mainly uses ICP type plasma reactor usually.This is because ICP type plasma reactor can indoor plasma ion density and the energy of independent control chamber, promote under low pressure to produce high density and large-scale plasma, and by little plasma ion energy and etching machines fully, thereby reduce equipment loss.
The very important parameter that realizes ICP type plasma reactor is for owing to offer the damage of the dielectric window that the high voltage of aerial coil causes, uniformity in high/low plasma ion density and the extensive area, excessive radical concentration control, adjustable ion energy, and wide ion energy distribution.
Yet the ICP type plasma reactor of Zhi Zaoing can produce the high-density plasma ion so far, but can not control the concentration of excessive group, can not control plasma ion energy, and can not expand the plasma ion energy distribution.Therefore, ICP type plasma reactor has demonstrated than the worse processing performance of CCP type plasma reactor, although it is more effective than CCP type plasma reactor.Therefore, ICP type plasma reactor is difficult in assurance very high photosensitive (PR) and optionally carries out high aspect ratio technology simultaneously.
Carry out at ICP type plasma reactor under the situation of dry etching process, the high ionization of reacting gas and source current power increase the unexpected reduction that causes plasma ion energy when low frequency RF power is provided to negative electrode.Therefore some phenomenon can occur, for example etching stops, chamber mates, hang down PR selectivity and narrow process window.
Summary of the invention
An aspect of illustrated embodiments of the invention is in order to solve described problem and/or defective at least, and following advantage is provided at least.Therefore, an aspect of illustrated embodiments of the invention provides a kind of hybrid plasma reactor, be used to provide the bias RF power of having mixed high-frequency RF power and low frequency RF power to offer the source current of aerial coil to negative electrode and control, thereby compensation when low frequency RF power is provided to negative electrode is because source current power increases the unexpected reduction of the plasma ion energy that causes, and plasma ion density and energy are maintained within the setting range.
An aspect according to illustrated embodiments of the invention provides a kind of hybrid plasma reactor.Described hybrid plasma reactor comprises ICP (inductive coupled plasma) source unit and skew RF (radio frequency) power subsystem.Described ICP source unit comprises chamber, antenna unit, and source current unit.Described chamber comprises the chamber body of open top (opened) and the dielectric window that covers the open top of described chamber body.Described antenna unit places the described dielectric window outside.Described source current unit provides source current to described antenna unit.Described skew RF power subsystem provides bias RF power to negative electrode.Described negative electrode is installed in the described chamber, and on the negative electrode top installation targets wafer.Plasma ion density when the source current greater than setting power is provided for described antenna unit in the described chamber is greater than the plasma ion density in the described chamber when the source current less than described setting power is provided for described antenna unit.Plasma ion energy when the source current less than described setting power is provided for described antenna unit in the described chamber is greater than the plasma ion energy in the described chamber when the source current greater than described setting power is provided for described antenna unit.In order to improve described setting power and to expand the adjustable extent of described source current, described skew RF power subsystem provides the bias RF power of having mixed high-frequency RF power and low frequency RF power to negative electrode, thereby reduction suddenly compensates to the plasma ion energy in the described chamber that takes place when the source current power that offers described antenna unit is increased to greater than described setting power, thereby perhaps plasma ion density in the described chamber and energy is remained in the setting range.
Another aspect according to illustrated embodiments of the invention provides a kind of hybrid plasma reactor.Described hybrid plasma reactor comprises ICP source unit and high-frequency RF power subsystem.Described ICP source unit comprises chamber, antenna unit, and source current unit.Described chamber comprises open-topped chamber body and the dielectric window that covers the open top of described chamber body.Described antenna unit places the described dielectric window outside.Described source current unit provides source current to described antenna unit.Described high-frequency RF power subsystem provides bias RF power to negative electrode.Described negative electrode is installed in the described chamber, and on the negative electrode top installation targets wafer.The low frequency RF power subsystem is parallel to the high-frequency RF power subsystem and is connected to described negative electrode, and provides low frequency RF power to described negative electrode.Plasma ion density when the source current greater than setting power is provided for described antenna unit in the described chamber is greater than the plasma ion density in the described chamber when the source current less than described setting power is provided for described antenna unit.Plasma ion energy when the source current less than described setting power is provided for described antenna unit in the described chamber is greater than the plasma ion energy in the described chamber when the source current greater than described setting power is provided for described antenna unit.In order to improve described setting power and to expand the adjustable extent of described source current, described high-frequency RF power subsystem and low frequency RF power subsystem are worked together and are provided the bias RF power of having mixed high-frequency RF power and low frequency RF power to described negative electrode, thereby reduction suddenly compensates to the plasma ion energy in the described chamber that takes place when the source current power that offers described antenna unit is increased to greater than described setting power, thereby perhaps plasma ion density in the described chamber and energy is remained in the setting range.
Another aspect according to illustrated embodiments of the invention provides a kind of hybrid plasma reactor.Described hybrid plasma reactor comprises the ICP source unit, high-frequency RF power subsystem, low frequency RF power subsystem, and source current switch unit.Described ICP source unit comprises chamber, antenna unit, and source current unit.Described chamber comprises open-topped chamber body and the dielectric window that covers the open top of described chamber body.Described antenna unit places the described dielectric window outside.Described source current unit provides source current to described antenna unit.Described high-frequency RF power subsystem provides bias RF power to negative electrode.Described negative electrode is installed in the described chamber, and on the negative electrode top installation targets wafer.The low frequency RF power subsystem is parallel to the high-frequency RF power subsystem and is connected to described negative electrode, and provides low frequency RF power to described negative electrode.Described source current switch unit is parallel to described high-frequency RF power subsystem and is connected to described negative electrode.Described source current switch unit switches to be opened by described source current switch unit described negative electrode optionally being connected to ground connection, thereby the high-frequency RF power that produces from described source current unit is optionally offered described negative electrode.
Form the closed-loop path when described negative electrode is connected to ground connection by described source current switch unit, described closed-loop path comprises described source current unit, described antenna unit, described negative electrode, described source current switch unit and ground connection.Described source current is RF power with the frequency that is higher than described high-frequency RF power-frequency, have the RF power of the frequency that is lower than described low frequency RF power-frequency and have in the RF power of the frequency between described low frequency RF power-frequency and the high-frequency RF power-frequency any one.
Plasma ion density when the source current greater than setting power is provided for described antenna unit in the described chamber is greater than the plasma ion density in the described chamber when the source current less than described setting power is provided for described antenna unit.Plasma ion energy when the source current less than described setting power is provided for described antenna unit in the described chamber is greater than the plasma ion energy in the described chamber when the source current greater than described setting power is provided for described antenna unit.
In order to improve described setting power and to expand the adjustable extent of described source current, described high-frequency RF power subsystem, described low frequency RF power subsystem and described source current switch unit are worked together and are provided by high-frequency RF power and low frequency RF power being mixed the bias RF power that obtains with described source current to described negative electrode, thereby reduction suddenly compensates to the plasma ion energy in the described chamber that takes place when the source current power that offers described antenna unit is increased to greater than described setting power, thereby perhaps plasma ion density in the described chamber and energy is remained in the setting range.
Description of drawings
Help to understand in conjunction with the accompanying drawings, above-mentioned and other targets of the present invention, feature and advantage can be clearer by following detailed description with the accompanying drawing, wherein:
Fig. 1 has shown according to the present invention the structure of the plasma reactor of first example embodiment;
Fig. 2 has shown the sectional view of antenna unit shown in Figure 1, and the DISTRIBUTION OF MAGNETIC FIELD that produces around antenna unit when source current is provided to antenna unit;
Fig. 3 is the diagram that shows the magnetic field intensity of each radius (R) depend on the primary antenna coil groups that comprises and secondary antenna coil groups in antenna unit shown in Figure 2 and the length (L) between primary antenna coil groups and the secondary antenna coil groups;
Fig. 4 is for showing the flow chart of the etching program of realizing by plasma reactor shown in Figure 1;
Fig. 5 has shown according to the present invention the structure of the plasma reactor of second example embodiment;
Fig. 6 is for showing the flow chart of the etching program of realizing by plasma reactor shown in Figure 5;
Fig. 7 has shown according to the present invention the structure of the plasma reactor of the 3rd example embodiment;
Fig. 8 is for showing the flow chart of the etching program of realizing by plasma reactor shown in Figure 7;
Fig. 9 is for showing the diagram of the plasma ion density characteristic that depends on the increase of source current power;
Figure 10 shows according to the variation of skew certainly that forms in the negative electrode during to the negative electrode of plasma reactor when the bias RF power that 2MHz is provided of the present invention (VDC) with respect to the diagram of source current variable power;
Figure 11 shows according to the variation of skew certainly that forms in the negative electrode during to the negative electrode of plasma reactor when the bias RF power that 12.56MHz is provided of the present invention (VDC) with respect to the diagram of source current variable power;
Figure 12 shows according to the variation of skew certainly that forms in the negative electrode during to the negative electrode of plasma reactor when the bias RF power that 27.12MHz is provided of the present invention (VDC) with respect to the diagram of source current variable power;
Figure 13 shows according to of the present inventionly changing in the skew certainly that provides unifrequency bias RF power and hybrid frequency bias RF power to form in the negative electrode under to the situation of the negative electrode of plasma reactor respectively (VDC) with respect to the diagram of source current variable power;
Figure 14 be show according to of the present invention when the source current power that 600W is provided during to the antenna unit of plasma reactor the etching speed variation with respect to the diagram of the variation of the frequency compounding ratio of the bias RF power that offers negative electrode; And
Figure 15 be show according to of the present invention when the source current power that 1500W is provided during to the antenna unit of plasma reactor the etching speed variation with respect to the diagram of the variation of the frequency compounding ratio of the bias RF power that offers negative electrode.
In institute's drawings attached, identical referenced drawings numeral similar elements, feature and structure.
Embodiment
With reference now to the more detailed description of accompanying drawing example embodiment of the present invention.In the following description, be omitted in the detailed description of this known function that comprises and structure for simplicity.
The invention provides the required plasma properties of the technology of making semiconductor, liquid crystal diode (LCD) and other integrated circuits (adjustable plasma ion concentration for example, adjustable ion energy distribution, adjustable ion energy, adjustable group, and low ion loss plasma) mixed type plasma generating apparatus and method.The hybrid frequency that these plasma properties many antenna coil construction, cartridge type dielectric window, inductive coupled plasma (ICP) source unit that provides above chamber can be provided and offer negative electrode is offset and controls.
Fig. 1 has shown according to the present invention the structure of the plasma reactor of first example embodiment.With reference to figure 1, plasma reactor comprises inductive coupled plasma (ICP) source unit 1, and skew RF power subsystem, and skew RF power subsystem comprises low frequency radio frequency (RF) power subsystem 20 and high-frequency RF power subsystem 30.ICP source unit 1 comprises chamber 5, antenna unit 7, and source current unit 10.Chamber 5 comprises chamber body 13, and cartridge type dielectric window 11.Chamber body 13 is in its open top.Dielectric window 11 covers the open top of chamber body 13.Antenna unit 7 comprises primary antenna coil groups 21 and secondary antenna coil groups 23.Primary antenna coil groups 21 is arranged on dielectric window 11 outsides and is positioned at dielectric window 11 top on every side.Secondary antenna coil groups 23 is arranged on dielectric window 11 outsides and is positioned at dielectric window 11 bottom on every side.Masked segment 3 attaches to the top of the peripheral sidewall of chamber body 13, around dielectric window 11 and antenna unit 7 with dielectric window 11 and antenna unit 7 and exterior shield.
Dielectric window 11 has gas inlet 31 at its top.The gas injection system (not shown) is injected reacting gas to chamber 5 by gas inlet 31.Cathode assembly supports 15 and is arranged in the chamber 5.Cathode assembly supports 15 physical fixation to chamber body 13, and electrical ground.Negative electrode 17 places cathode assembly to support on 15.Insulator 19 places between cathode assembly support 15 and the negative electrode 17.Insulator 19 carries out electric insulation between cathode assembly support 15 and negative electrode 17.Wafer (W) is installed on the negative electrode 17 as editing objective.In particular, use the ceramic electrostatic chuck (CESC) that on negative electrode 17, is provided with that wafer (W) is fixed.
Source current unit 10 provides each source current to primary antenna coil groups 21 and secondary antenna coil groups 23.Source current unit 10 comprises that source impedance match circuit 22 is used for the source impedance coupling, and source radio-frequency generator 26.Source impedance match circuit 22 is connected with secondary antenna coil groups 23 primary antenna coil groups 21 with source radio-frequency generator 26.Source radio-frequency generator 26 is connected to ground connection.When source current unit 10 provides source current to primary antenna coil groups 21 and secondary antenna coil groups 23, near primary antenna coil groups 21 and secondary antenna coil groups 23, produce magnetic field.Therefore, at chamber 5 internal induction RF electric fields.
Low frequency RF power subsystem 20 is skew RF power subsystems, provides low frequency RF power to negative electrode 17.Low frequency RF power subsystem 20 comprises skew impedance matching circuit/low pass filter (LF coupling/LPF) 24 and skew low frequency generator 27.LF coupling/LPF 24 matched impedances and optionally only by low frequency RF power.Skew low frequency generator 27 produces low frequency RF power.
High-frequency RF power subsystem 30 comprises skew impedance matching circuit/high pass filter (HF coupling/HPF) 25 and skew radio-frequency generator 28.HF coupling/HPF 25 matched impedances and optionally only by high-frequency RF power.Skew radio-frequency generator 28 produces high-frequency RF power.Bias RF power is the mixing of low frequency RF power and high-frequency RF power, is provided for negative electrode 17 when low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 are worked together.
The ion concentration of plasma ion density when the source current power less than setting power (below be referred to as " breakover point power ") is provided for antenna unit 7 in the chamber 5 in the chamber 5 when providing source current power greater than setting power to antenna unit 7.Breakover point power is the standard of dividing low ionized space and high ionization zone.With reference to figure 9, the degree of ionization of the reacting gas when the source current power greater than breakover point power is provided for antenna unit 7 is much larger than the degree of ionization of the reacting gas when providing source current power less than breakover point power to be provided for antenna unit 7.For example, have in the plasma reactor of wafer of 200mm diameter in processing, breakover point power can be arranged in the scope of about 500W to 700W.Breakover point power depends on size, type and the process conditions of plasma reactor can be bigger or littler.
The ion energy of plasma ion energy when the source current power less than setting power is provided for antenna unit 7 in the chamber 5 in the chamber 5 when providing source current power greater than setting power to antenna unit 7.When the skew RF power subsystem that comprises low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 provides the bias RF power of having mixed low frequency RF power and high-frequency RF power during to negative electrode 17, setting power can improve.Therefore, the adjustable extent of source current power can further expand in the low ionized space.For example, when only providing low frequency RF power the phenomenon that the plasma ion energy in the chamber 5 reduces suddenly can take place to negative electrode 17 and when providing source current power greater than setting power to antenna unit 7.And, when high-frequency RF power only is provided to negative electrode 17, make raising source current power still can not normally carry out the degree of etch process although the plasma ions energy in the chamber 5 is reduced to.Yet, when providing the bias RF power of having mixed low frequency RF power and high-frequency RF power during to negative electrode 17, the bust of the plasma ion energy in the chamber 5 can be compensated, and plasma ion energy can remain within the setting range, can normally carry out etch process.
According to the present invention, ICP plasma source unit 1 comprises antenna unit 7.As shown in Figures 2 and 3, antenna unit 7 provides uniform magnetic field attribute and plasma properties shown in Figure 9.Can optionally use low ionization and high ionization zone like this, and the even ion concentration of describing after a while.
Cylinder dielectric window 11 guaranteed lead the ceramic electrostatic chuck (CESC) on (bulk) plasma and the negative electrode 17 thus the constant distance between the (not shown) is placed the wafer as process goal, thereby support independent control plasma ion density and energy.Therefore, cylinder dielectric window 11 has minimized the physics loss, supports effective etching and processing target simultaneously.
Antenna unit 7 is arranged on cylinder dielectric window 11 outsides.Cylinder dielectric window 11 has the structure of top flat surface.Gas inlet 31 places that provide in the dielectric window 11 are provided gas injection system.Gas injection system is effectively discharged the etching byproduct that produces in the etching by discharge orifice.Therefore, reacting gas can have constant residence time on the whole surface of editing objective, thereby guarantees the process window of wide region.And because surveillance can be installed in the space of dielectric window 11 tops, hardware designs can be very flexible.
As shown in Figure 2, antenna unit 7 comprises primary antenna coil groups 21 and secondary antenna coil groups 23.Primary antenna coil groups 21 all has the parallel a plurality of aerial coils that are connected with secondary antenna coil groups 23.Secondary antenna coil groups 23 be positioned to keep at a distance the distance of primary antenna coil groups 21 be coil radius (R) or less than or greater than coil radius (R).When length (L) Be Controlled between two aerial coil groups 21 and 23, the magnetic field intensity that produces in the chamber 5 is Be Controlled suitably.Chamber design very flexibly is provided like this, has been used to obtain ion concentration uniformity/intensity and uniform etching speed.Fig. 3 be between the antenna coil windings 21 and 23 length (L) less than coil radius (R), when its equal coil radius (R) and when its greater than the situation lower chambers 5 of coil radius (R) in the diagram of distribution of magnetic field intensity of generation.As shown in Figure 3, magnetic field intensity increases when length (L) is equal to or less than radius (R).When antenna coil unit 7 satisfies above-mentioned condition and each aerial coil winding 21 and 23 on the sense of current when mutually the same, can produce and compare the magnetic field that traditional solenoid type aerial coil has better uniformity and bigger intensity.Can in chamber 5, realize uniform and very high plasma ion density like this.
Primary antenna coil groups 21 and the secondary antenna coil groups of being made up of a plurality of coils 23 has low impedance value respectively.Therefore, very little source current voltage is dissipated relatively, and is provided for a plurality of coils.Can be reduced in the sputters (sputtering) (promptly low splash effect) that take place in the chamber 5 like this, and the damage and the minimum contamination of the dielectric window 11 that will cause by sputter.
To produce and keep plasma be possible being lower than under the low RF power of 20W.When the bias RF power of having mixed high and low frequency RF power is provided for negative electrode 17, set power (being breakover point) as the standard of dividing low ionized space and high ionization zone, this point moves to point (P2) from point (P1) as shown in Figure 9.Because this moving can guarantee low ionization and high ionization zone in the wide range relatively, and can guarantee the flexibility of insulation film etch process.In other words, can control radical concentration by the high ionization attribute of control IC P type plasma reactor.Can realize low-loss and high efficiency real time chamber cleaning (ICC), thereby with maximization average time between the chamber clean (MTBC), because can obtain higher ion volume ion density and high ionization condition down at constant RF power (approximately 500W to 700W or bigger).And, the effective solution to the process unit damage problem of chronic chamber electric arc and capacitively coupled plasma (CCP) type plasma reactor can be provided.
Fig. 4 is the flow chart that shows the etch process of realizing by plasma reactor shown in Figure 1.
With reference to figure 4, when plasma reactor is carried out dry ecthing, fix by the CESC (not shown) that provides on the negative electrode 17 as the wafer (W) of editing objective.Reacting gas is provided in the chamber 5 by gas inlet 31.Vacuum pump (not shown) and pressure control unit (not shown) remain on operating pressure with the pressure in the chamber 5.
Aspect physical/chemical, the plasma that produces by ICP plasma source unit 1 can obtain two kinds of patterns: CCP pattern and ICP pattern.As shown in Figure 9, along with the ICP source power increases, the particular plasma volume ion density can significantly not increase in low ionized space (CCP pattern), and in high ionization zone (ICP pattern) ionization takes place suddenly.
In particular, unexpected ionization can not take place below constant RF source current power (being breakover point power), plasma reactor demonstrates the CCP attribute.It is unexpected that ionization take place on constant RF source current power, and plasma reactor demonstrates the built-in attribute of ICP.When the pressure in the chamber 5 reached the required pressure of technology, the process characteristic that plasma reactor can depend on the etching pattern optionally was operated in in CCP pattern and the ICP pattern any one.
When carrying out etch process in low ionized space, source current power is set under the breakover point power.When carrying out etch process in the high ionization zone, source current power is set on the breakover point power.In case the source current setting is finished, then source current unit 10, low frequency RF power subsystem 20, and high-frequency RF power subsystem 30 is opened.Therefore, source current unit 10 provides constant RF power (source current just) to give antenna unit 7, forms plasma simultaneously in chamber 5.Low frequency/high-frequency RF power is mixed and offer negative electrode 17.
In other words, top ICP plasma source unit 1 produces the plasma that is suitable for operational characteristic, and provides high-frequency/low-frequency RF power to negative electrode 17 according to the hybrid frequency mode that is suitable for operational characteristic simultaneously, thereby realizes required technology.And the bust of ion energy intensity/ion concentration/radical concentration can and offer the low frequency/high-frequency RF power of negative electrode and Be Controlled by suitable control IC P source current in low ionized space and high ionization zone.Therefore, can guarantee high etching speed, high photosensitive (PR) selectivity and wide process window.
During etch process, the etching byproduct gives off outside the chamber 5 by exhaust system, and its part is deposited on the inwall of chamber 5.The etching byproduct that is deposited on the inwall of chamber 5 has changed operational characteristic and simultaneously as impurity, has caused the severe contamination problem of processing object, thereby reduces quality and productivity ratio.In order to address this problem, article on plasma precursor reactant device realizes using the ICC of plasma.
When plasma reactor is in the ICC cleaning mode, even it only uses the ICP source current dried cleaning course of high density (recipe) of carrying out no wafer from the RF power of source current unit 10.In particular, when plasma reactor is operated in the ICC cleaning mode, source current unit 10 provides source current to antenna unit 7, and skew RF power subsystem (being low frequency RF power subsystem 20 and high-frequency RF power subsystem 30) stops to provide bias RF power to negative electrode 17.Thus, plasma reactor is not installed at target wafer (W) and uses high-density plasma to carry out ICC technology under the situation on the negative electrode 17.
Fig. 5 has shown the structure according to the plasma reactor of second embodiment of the invention.
With reference to figure 5, the structure and the detail operations of plasma reactor described, based on some differences because they are almost identical with plasma reactor according to first embodiment of the invention.A difference is that RF power subsystem 50 only produces one in high-frequency RF power and the low frequency RF power, is connected to negative electrode 17.In other words, high-frequency RF power subsystem or low frequency RF power subsystem are connected to negative electrode 17.Another difference is that source current switch unit 42 is parallel to RF power subsystem 50 and is connected to negative electrode 17.Source current switch unit 42 supports that negative electrode 17 optionally is connected to ground connection by source current switch unit 42, thereby the high frequency or the low frequency RF power that produce by source current unit 40 are optionally offered negative electrode 17.When negative electrode 17 is connected to ground connection by source current switch unit 42, form the closed-loop path that comprises source current unit 40, antenna unit 7, negative electrode 17, source current switch unit 42 and ground connection.Source current switch unit 42 comprises source current filter 37 and switch 39.Source current filter 37 carries out filtering by 17 pairs of source currents that receive from antenna unit 7 of negative electrode, gets rid of other frequency signals except the source current frequency.Switch 39 is electrically connected to ground connection with source current filter 37, perhaps is connected with ground connection disconnection.When negative electrode 17 was connected to ground connection and skew RF power subsystem 50 and 40 work of source current unit by source current switch unit 42, the bias RF power of having mixed high-frequency RF power and low frequency RF power was provided for negative electrode 17.Therefore, comprise that the skew RF power subsystem 50 of low frequency or high-frequency RF power subsystem and source current switch unit 42 provide bias RF power to negative electrode 17.
Comprise the low frequency RF power subsystem and provide under the situation of low frequency RF power to negative electrode 17 that at skew RF power subsystem 50 source current unit 40 comprises the high-frequency RF power subsystem and optionally provides high-frequency RF power to negative electrode 17 by source current switch unit 42.
Comprise the high-frequency RF power subsystem and provide under the situation of high-frequency RF power to negative electrode 17 that at skew RF power subsystem 50 source current unit 40 comprises the low frequency RF power subsystem and optionally provides low frequency RF power to negative electrode 17 by source current switch unit 42.
Source current filter 37 is tuned to the source current frequency that produces by source current unit 40.
Fig. 6 is the flow chart that shows the etching program of realizing by plasma reactor as shown in Figure 5.With reference to figure 6, when the pressure in the chamber 5 reaches the required pressure of technology, plasma reactor can depend on the operational characteristic of etching pattern, according to the similar fashion of the plasma reactor of first example embodiment according to the present invention, optionally be operated in CCP pattern and the ICP pattern any one.
When carrying out etch process in low ionized space, the source current power that offers antenna unit 7 is set at below the breakover point power.When carrying out etch process in the high ionization zone, the source current power that offers antenna unit 7 is set on the breakover point power.In case the source current setting is finished, source current unit 40, source current switch unit 42 and skew RF power subsystem 50 are opened.Therefore, when RF power subsystem 50 provided high frequency or low frequency bias RF power to negative electrode 17, source current unit 40 provided source current to negative electrode 17 by antenna unit 7.At this moment, negative electrode 17 is connected to ground connection by source current switch unit 42.
When plasma reactor was in the etching pattern, source current switch unit 42 switches opened and carries out etch process.When plasma reactor was in the ICC cleaning mode, source current switch unit 42 switches shutoff and source current only is provided for antenna unit 7.The plasma reactor of second example embodiment provides the advantage that reduces cost with equipment size according to the present invention, because it can obtain the performance corresponding to the plasma reactor of first example embodiment according to the present invention, substitute three RF generators and three impedance matching circuit/filters by two RF power generators 33 and 35 and two impedance matching circuit/filters 29 and 31 simultaneously.
Breakover point power is greater than the breakover point power of first example embodiment, because it supports the ICP source current by dual antenna unit 7 and the negative electrode 17 that offers ICP source unit 1.
Fig. 7 has shown according to the present invention the structure of the plasma reactor of the 3rd example embodiment.With reference to figure 7, plasma reactor has and structure like the composite class of the plasma reactor of first and second example embodiment according to the present invention.This plasma reactor is with the similar part of the plasma reactor of first example embodiment is to be offset the RF power subsystem and comprises low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 according to the present invention.This plasma reactor is that with the similar part of the plasma reactor of second example embodiment according to the present invention it comprises that further source current switch unit 42 is optionally to provide source current to negative electrode 17.
In particular, low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 are electrically connected to negative electrode 17 concurrently, thereby low frequency/high-frequency RF power is mixed and offer negative electrode 17.Source current switch unit 42 is constructed to optionally provide source current to negative electrode 17.
Low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 in being included in skew RF power subsystem provide respectively under low frequency RF power and the situation of high-frequency RF power to negative electrode 17, source current unit 10 can optionally provide low frequency RF power by source current switch unit 42, and this power is lower than the low frequency RF power that offers negative electrode 17.
Low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 in being included in skew RF power subsystem provide respectively under low frequency RF power and the situation of high-frequency RF power to negative electrode 17, source current unit 10 can use source current switch unit 42 that low frequency RF power optionally is provided, and this power is greater than the low frequency RF power that offers negative electrode 17 and be lower than the high-frequency RF power that offers negative electrode 17.
Low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 in being included in skew RF power subsystem provide respectively under low frequency RF power and the situation of high-frequency RF power to negative electrode 17, source current unit 10 can use source current switch unit 42 that high-frequency RF power optionally is provided, and this power is greater than the high-frequency RF power that offers negative electrode 17.
Fig. 8 is the flow chart that shows the etching program of realizing by plasma reactor shown in Figure 7.
With reference to figure 8, when the pressure in the chamber 5 reaches the required pressure of technology, plasma reactor can depend on the operational characteristic of etching pattern, according to the similar fashion of the plasma reactor of first example embodiment according to the present invention, optionally be operated in CCP pattern and the ICP pattern any one.
When carrying out etch process in low ionized space, the source current power that offers antenna unit 7 is set at below the breakover point power.When carrying out etch process in the high ionization zone, the source current power that offers antenna unit 7 is set on the breakover point power.In case the source current power setting is finished, then source current unit 10, low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 and source current switch unit 42 are opened.Therefore, low frequency RF power subsystem 20 and high-frequency RF power subsystem 30 provide the mixing of low frequency/high-frequency RF power to negative electrode 17, and source current unit 40 provides source current power to negative electrode 17 by antenna unit 17.At this moment, negative electrode 17 is connected to ground connection by source current switch unit 42.
When plasma reactor was in the etching pattern, source current switch unit 42 switches opened and carries out etch process.When plasma reactor is in the ICC cleaning mode, switches at source current switch unit 42 and to turn-off and source current only is provided for the high density ICC process of carrying out no wafer under the state of antenna unit 7.The plasma reactor of the 3rd example embodiment is for mass wafer (300mm, purpose 450mm) and providing are provided according to the present invention.This plasma reactor can reduce cost and equipment size, because it substitutes four RF power generators and four impedance matching circuit/filters by 26,27 and 28 and three impedance matching circuit/filters 22,24 of three RF generators and 25.
Breakover point in this breakover point power ratio first example embodiment is more powerful, because it supports the ICP source current to be offered the antenna unit 7 and the negative electrode 17 of ICP source unit 1 doubly.
Show the diagram of ICP attribute among Fig. 9, thereby described operation of the present invention in detail.With reference to figure 9, low ionized space and high ionization zone are provided.Along with the RF source current power that offers antenna unit 7 improves, reacting gas not ionization suddenly in low ionized space, and ionization suddenly in the high ionization zone.In particular, plasma reactor does not take place to demonstrate the CCP attribute under the situation of unexpected ionization when being lower than constant RF source current power.And plasma reactor takes place to demonstrate the ICP built-in attribute under the situation of unexpected ionization when being higher than constant RF source current power.
Except ICP source current power, offset power should offer negative electrode 17 and place wafer on the negative electrode 17 with processing.Be provided for respectively under the situation of negative electrode 17 in offset power with mutually different frequency (low frequency/intermediate frequency/high frequency) and offset power with hybrid frequency, certainly (attribute VDC) is compared, and whether prediction obtains any processing result in all cases in the skew of promptly definite low ionized space of two attributes of ICP plasma and high ionization zone intermediate ion energy.Like this, why be appreciated that the insulation film etching machines as a kind of etching machines that adopts traditional IC P type plasma reactor can not provide good result, and why a lot of system is removed from production line.
Figure 10 shows according to the variation of skew certainly that forms in the negative electrode during to the negative electrode of plasma reactor when the bias RF power that 2MHz is provided of the present invention (VDC) with respect to the diagram of source current variable power.
Figure 11 shows according to the variation of skew certainly that forms in the negative electrode during to the negative electrode of plasma reactor when the bias RF power that 12.56MHz is provided of the present invention (VDC) with respect to the diagram of source current variable power.
Figure 12 shows according to the variation of skew certainly that forms in the negative electrode during to the negative electrode of plasma reactor when the bias RF power that 27.12MHz is provided of the present invention (VDC) with respect to the diagram of source current variable power.
The diagram of Figure 10 to Figure 12 is illustrated in reacting gas CF 4The value that the processing conditions of the internal pressure that has about 50 millitorrs with the speed injecting chamber 5 and the chamber 5 of 150 standard cubic centimeters per minute (SCCM) is measured down.
Low ionized space
In the zone that is lower than constant ICP source RF power (approximately 500W to 700W) in Fig. 9, ion concentration can be along with RF power increases and increases suddenly.In this zone, ionization can not take place suddenly.
Determine that (VDC) attribute can depend on low frequency 2.0MHz, the intermediate frequency 12.56MHz of the offset power that offers negative electrode and high frequency 27.12MHz and change, thereby processing places the wafer on the negative electrode for the skew certainly of plasma ion energy.These attribute display are in Figure 10 to Figure 12.By these diagrams, be appreciated that (source current power increases and increases in VDC) along with the zone that is lower than constant ICP source current power (approximately 500W to 700W) from skew.And plasma ion energy increases along with the reduction of the frequency of the offset power that offers negative electrode.Plasma ion energy raises along with the frequency of the offset power that offers negative electrode and reduces.
Figure 13 shows according to of the present inventionly changing in the skew certainly that provides unifrequency bias RF power and hybrid frequency bias RF power to form in the negative electrode under to the situation of the negative electrode of plasma reactor respectively (VDC) with respect to the diagram of source current variable power.In Figure 13, when " ◆ " mark line is illustrated in the low frequency bias RF power and is provided for negative electrode from the skew (VDC) variation of (corresponding to plasma ion energy)." ▲ " mark line is represented when high frequency offset RF power is provided for negative electrode from skew (variation VDC)." * " mark line is represented when the bias RF power of having mixed low frequency and high-frequency RF power is provided for negative electrode from skew (variation VDC).Be appreciated that when the hybrid frequency bias RF power is provided for negative electrode that by each lines ion energy approximates the mean value of the energy value of low frequency/when high-frequency RF power is provided for negative electrode greatly.
In the diagram of Figure 13, measured value does not show, but plasma ion density can depend on the offset power amount in frequency size and the low ionized space and have bigger value.
Therefore, reacting gas can the ionization suddenly along with the increase of source current power in the low ionized space.Because relative frequency and the offset power amount of depending on ion concentration of ion energy intensity can be carried out concentration control to excessive group.And can obtain wide process window and stable technology.
Showing insulation film (SiO 2) Figure 14 of etching speed in, when identical offset power amount was provided, etching speed was the highest under hybrid frequency.This macroion density that is the high ion energy that causes owing to the low frequency that offers negative electrode and high frequency cause produces.With this understanding, etching speed and etching speed inhomogeneities depend on offset power more.
The high ionization zone
Be higher than in Fig. 9 in the zone of constant ICP source RF power (approximately 500W to 700W), ion concentration improves and increases suddenly along with RF power.In this zone, ionization takes place suddenly.
Figure 10 to Figure 12 shows to depend on to impose on negative electrode is determined plasma ion energy with low frequency 2.0MHz, the intermediate frequency 12.56MHz of the offset power of the wafer of installation and processing on negative electrode and the high frequency 27.12MHz (diagram of attribute VDC) of skew certainly.By these diagrams, be appreciated that (source current power increases and changes greatly in VDC) along with the zone that is being higher than constant ICP source power (approximately 500W to 700W) from skew.In other words, be appreciated that along with source current power in this zone increases, skew (VDC) becomes littler suddenly certainly.And along with frequency diminishes, skew becomes littler suddenly certainly.Along with frequency becomes bigger, skew becomes littler gradually certainly.
Figure 13 shows from skew (diagram of relation, i.e. ion energy and single and hybrid frequency VDC).Ion energy intensity under the hybrid frequency approximates the mean value of ion energy intensity under low frequency/high frequency greatly.The bust of ion energy can be smoothed to a great extent by adding high frequency 27.12MHz under low frequency 2.0MHz.
Herein, measured value does not show, but plasma ion density may depend on offset power amount in frequency size and the high ionization zone and have bigger value.
Therefore, along with source current power in the high ionization zone increases, the unexpected ionization of reacting gas.Add and apply high-frequency to guarantee stable and wide processing window, because along with the frequencies go lower ion energy intensity flip-flop that offers negative electrode.
Showing insulation film (SiO 2) Figure 15 of etch-rate in, when applying the offset power of same amount, etch-rate under low frequency and hybrid frequency much at one.Be appreciated that change in etch rate is different greatly in change in etch rate in the high ionization zone and the low ionized space.This is because the ion concentration of plasma reactor depends on ICP source current power more.Suddenly the ion energy intensity/ion concentration/radical concentration that reduces can and offer the low frequency/high-frequency RF power of negative electrode and Be Controlled by suitable control IC P source power in the high ionization zone.Therefore, can guarantee high etch rates, high selectivity and wide processing window.
As mentioned above, the invention provides hybrid plasma reactor and be used for realizing simultaneously capacitive and inductive coupled function, thereby double to improve processing performance and productivity ratio.In particular, the present invention can suitably coordinate to have the ICP source current of macroion density attributes and low ion energy attribute by the hybrid frequency bias RF power, thereby improve processing performance, for example adjustable ion concentration, adjustable ion energy and ion energy distribution, radical concentration is controlled and is boosted productivity for example remarkable improvement of MTBC.
According to the present invention, when ICP type of reactor realization dry etching process, the high-frequency quilt is additional to be added, thus the ion energy intensity bust that compensation takes place along with the raising of ICP source power in the high ionization zone when applying low frequency to negative electrode.Like this, the present invention can provide that etching to the ICP type of reactor stops, the solution of defectives such as chamber coupling, low PR selectivity and narrow process window.The present invention can add high-frequency to low frequency in low ionized space, thereby guarantees high ion energy and ion concentration, and improves etching speed.
The present invention can utilize the advantage of ICP type of reactor to greatest extent, high efficiency for example, and low ion loss, and decoupling zero (decoupled) effect, and compare with the CCP type of reactor and can effectively carry out no wafer ICC.The present invention can provide the solution to the chronic electric arc problem that takes place in CCP type plasma reactor.
Plasma reactor of the present invention can inhibitory reaction gas excessive ionization, keep the higher ion volume ion density, and when low frequency is provided for negative electrode in the unexpected reduction of the above counterion energy intensity of constant ICP source power.
Although show and described the present invention with reference to certain preferred embodiment, it will be understood by those skilled in the art that and to make the change on various forms and the details and not deviate from the spirit and scope of the invention that are defined by the following claims it.

Claims (20)

1. hybrid plasma reactor comprises:
The ICP source unit, described ICP source unit comprises:
Chamber, described chamber comprise open-topped chamber body and the dielectric window that covers the open top of described reaction cell body;
Antenna unit places the described dielectric window outside; And
The source current unit is used to provide source current to described antenna unit; And
Skew RF power subsystem is used to provide bias RF power to negative electrode, and described negative electrode is installed in the described chamber, and on the top of negative electrode the installation targets wafer,
Wherein when the source current greater than setting power is provided for described antenna unit the plasma ion density in the described chamber greater than the plasma ion density in the described chamber when the source current less than described setting power is provided for described antenna unit
Wherein when the source current less than described setting power is provided for described antenna unit the plasma ion energy in the described chamber greater than the plasma ion energy in the described chamber when the source current greater than described setting power is provided for described antenna unit, and
Wherein in order to improve described setting power and to expand the adjustable extent of described source current, described skew RF power subsystem provides the bias RF power of having mixed high-frequency RF power and low frequency RF power to negative electrode, thereby the plasma ion energy in the described chamber that takes place when being increased to greater than described setting power when the source current that offers described antenna unit reduces suddenly and compensates, thereby perhaps plasma ion density in the described chamber and energy is remained in the setting range.
2. reactor according to claim 1 wherein depends on the degree of ionization that injects the reacting gas in the described chamber and etch process is provided and etch process is provided in the high ionization zone at low ionized space, and
Wherein when the source current less than described setting power is provided for described antenna unit, described plasma reactor is carried out etch process in described low ionized space, and when the source current greater than described setting power was provided for described antenna unit, described plasma reactor was carried out etch process in described high ionization zone.
3. reactor according to claim 1, wherein said skew RF power subsystem comprises:
The high-frequency RF power subsystem is used to provide high-frequency RF power to described negative electrode; And
The low frequency RF power subsystem is parallel to described high-frequency RF power subsystem and is connected to described negative electrode, and provides low frequency RF power to described negative electrode,
Wherein when described high-frequency RF power subsystem and low frequency RF power subsystem were worked together, the bias RF power of having mixed described high-frequency RF power and low frequency RF power was provided for described negative electrode.
4. reactor according to claim 1, wherein when described plasma reactor was carried out etch process to the wafer with 200mm diameter, described setting power was in the scope of 500W to 700W.
5. reactor according to claim 1, wherein when described plasma reactor is carried out the real time chamber clean operation, described source current unit provides source current to described antenna unit, and described skew RF power subsystem stops to provide bias RF power to described negative electrode, and described plasma reactor is carried out the high density plasma chamber cleaning course under the situation that wafer is not installed on the described negative electrode.
6. reactor according to claim 1, wherein said source current unit produce high-frequency RF power as source current,
Wherein said skew RF power subsystem comprises:
The low frequency RF power subsystem provides low frequency RF power to described negative electrode; And
The source current switch unit is connected to described negative electrode with described low frequency RF power subsystem is parallel,
Wherein said source current switch unit switches to be opened optionally described negative electrode being connected to ground connection by described source current switch unit, thereby the high-frequency RF power that produces by described source current unit is optionally offered described negative electrode,
Wherein form the closed-loop path when described negative electrode is connected to ground connection by described source current switch unit, this closed-loop path comprises described source current unit, described antenna unit, described negative electrode, described source current switch unit and described ground connection, and
Wherein when described negative electrode was connected to described ground connection and the work of described low frequency RF power subsystem by described source current switch unit, the bias RF power of having mixed high-frequency RF power and low frequency RF power was provided for described negative electrode.
7. reactor according to claim 1, wherein said source current unit produce low frequency RF power as source current,
Wherein said skew RF power subsystem comprises:
The high-frequency RF power subsystem provides high-frequency RF power to described negative electrode; And
The source current switch unit is connected to described negative electrode with described high-frequency RF power subsystem is parallel,
Wherein said source current switch unit switches to be opened optionally described negative electrode being connected to ground connection by described source current switch unit, thereby the low frequency RF power that produces by described source current unit is optionally offered described negative electrode,
Wherein form the closed-loop path when described negative electrode is connected to ground connection by described source current switch unit, this closed-loop path comprises described source current unit, described antenna unit, described negative electrode, described source current switch unit and described ground connection, and
Wherein when described negative electrode was connected to described ground connection and the work of described high-frequency RF power subsystem by described source current switch unit, the bias RF power of having mixed high-frequency RF power and low frequency RF power was provided for described negative electrode.
8. reactor according to claim 1, wherein said skew RF power subsystem comprises:
The high-frequency RF power subsystem is used to provide high-frequency RF power to described negative electrode;
The low frequency RF power subsystem is parallel to described high-frequency RF power subsystem and is connected to described negative electrode, and provides low frequency RF power to described negative electrode; And
The source current switch unit is parallel to described high-frequency RF power subsystem and is connected to described negative electrode,
Wherein said source current switch unit switches to be opened so that described negative electrode is connected to ground connection by described source current switch unit, thereby the source current that produces by described source current unit is offered described negative electrode by selectivity, and
Wherein form the closed-loop path when described negative electrode is connected to ground connection by described source current switch unit, this closed-loop path comprises described source current unit, described antenna unit, described negative electrode, described source current switch unit and described ground connection.
9. reactor according to claim 8, wherein said source current unit produce have the frequency that is lower than described low frequency RF power additional RF power as source current,
Wherein said skew RF power subsystem produces and mixes the bias RF power that obtains by described additional RF power is added with described high-frequency RF power and low frequency RF power, and
Wherein when described negative electrode is connected to ground connection and described high-frequency RF power subsystem and the work of low frequency RF power subsystem by described source current switch unit,, described additional RF power is provided for described negative electrode by being mixed the bias RF power that obtains with described high-frequency RF power and low frequency RF power.
10. reactor according to claim 8, wherein said source current unit produce have the frequency that is higher than described low frequency RF power-frequency and is lower than described high-frequency RF power-frequency additional RF power as source current,
Wherein said skew RF power subsystem produces and mixes the bias RF power that obtains by described additional RF power is added with described high-frequency RF power and low frequency RF power, and
Wherein when described negative electrode is connected to ground connection and described high-frequency RF power subsystem and the work of low frequency RF power subsystem by described source current switch unit,, described additional RF power is provided for described negative electrode by being mixed the bias RF power that obtains with described high-frequency RF power and low frequency RF power.
11. reactor according to claim 8, wherein said source current unit produce have the frequency that is higher than described high-frequency RF power additional RF power as source current,
Wherein said skew RF power subsystem produces and mixes the bias RF power that obtains by described additional RF power is added with described high-frequency RF power and low frequency RF power, and
Wherein when described negative electrode is connected to ground connection and described high-frequency RF power subsystem and the work of low frequency RF power subsystem by described source current switch unit,, described additional RF power is provided for described negative electrode by being mixed the bias RF power that obtains with described high-frequency RF power and low frequency RF power.
12. a hybrid plasma reactor comprises:
The ICP source unit, described ICP source unit comprises:
Chamber, described chamber comprise open-topped chamber body and the dielectric window that covers the open top of described chamber body;
Antenna unit places the described dielectric window outside; And
The source current unit is used to provide source current to described antenna unit;
The high-frequency RF power subsystem is used to provide bias RF power to negative electrode, and described negative electrode is installed in the described chamber, and on the top of negative electrode the installation targets wafer; And
The low frequency RF power subsystem is parallel to described high-frequency RF power subsystem and is connected to described negative electrode, and provides low frequency RF power to described negative electrode,
Wherein when the source current greater than setting power is provided for described antenna unit the plasma ion density in the described chamber greater than the plasma ion density in the described chamber when the source current less than described setting power is provided for described antenna unit
Wherein when the source current less than described setting power is provided for described antenna unit the plasma ion energy in the described chamber greater than the plasma ion energy in the described chamber when the source current greater than described setting power is provided for described antenna unit, and
Wherein in order to improve described setting power and to expand the adjustable extent of described source current, described high-frequency RF power subsystem and low frequency RF power subsystem are worked together and are provided the bias RF power of having mixed high-frequency RF power and low frequency RF power to described negative electrode, thereby the plasma ion energy in the described chamber that takes place when being increased to greater than described setting power when the source current that offers described antenna unit reduces suddenly and compensates, thereby perhaps plasma ion density in the described chamber and energy is remained in the setting range.
13. reactor according to claim 12 wherein depends on the degree of ionization that injects the reacting gas in the described chamber and etch process is provided and etch process is provided in the high ionization zone at low ionized space, and
Wherein when the source current less than described setting power is provided for described antenna unit, described plasma reactor is carried out etch process in described low ionized space, and when the source current greater than described setting power was provided for described antenna unit, described plasma reactor was carried out etch process in described high ionization zone.
14. reactor according to claim 12, wherein when described plasma reactor was carried out etch process to the wafer with 200mm diameter, described setting power was in the scope of 500W to 700W.
15. reactor according to claim 12, wherein when described plasma reactor is carried out the real time chamber clean operation, described source current unit provides source current to described antenna unit, and described high-frequency RF power subsystem and low frequency RF power subsystem stop to provide bias RF power to described negative electrode, and described plasma reactor is carried out the high density plasma chamber cleaning course under the situation that wafer is not installed on the described negative electrode.
16. a hybrid plasma reactor comprises:
The ICP source unit, described ICP source unit comprises:
Chamber, described chamber comprise open-topped chamber body and the dielectric window that covers the open top of described chamber body;
Antenna unit places the described dielectric window outside; And
The source current unit is used to provide source current to described antenna unit;
The high-frequency RF power subsystem is used to provide bias RF power to negative electrode, and described negative electrode is installed in the described chamber, and on the top of negative electrode the installation targets wafer;
The low frequency RF power subsystem is parallel to described high-frequency RF power subsystem and is connected to described negative electrode, and provides low frequency RF power to described negative electrode; And
The source current switch unit is parallel to described high-frequency RF power subsystem and is connected to described negative electrode,
Wherein said source current switch unit switches to be opened by described source current switch unit described negative electrode selectivity being connected to ground connection, thereby the high-frequency RF power that produces from described source current unit is optionally offered described negative electrode,
Wherein form the closed-loop path when described negative electrode is connected to ground connection by described source current switch unit, described closed-loop path comprises described source current unit, described antenna unit, described negative electrode, described source current switch unit and ground connection,
Wherein said source current is RF power with the frequency that is higher than described high-frequency RF power-frequency, have the RF power of the frequency that is lower than described low frequency RF power-frequency and have in the RF power of the frequency between described low frequency RF power-frequency and the high-frequency RF power-frequency any one
Wherein when the source current greater than setting power is provided for described antenna unit the plasma ion density in the described chamber greater than the plasma ion density in the described chamber when the source current less than described setting power is provided for described antenna unit
Wherein when the source current less than described setting power is provided for described antenna unit the plasma ion energy in the described chamber greater than the plasma ion energy in the described chamber when the source current greater than described setting power is provided for described antenna unit, and
Wherein in order to improve described setting power and to expand the adjustable extent of described source current, described high-frequency RF power subsystem, described low frequency RF power subsystem and described source current switch unit are worked together and are provided by high-frequency RF power and low frequency RF power being mixed the bias RF power that obtains with described source current to described negative electrode, thereby the plasma ion energy in the described chamber that takes place when being increased to greater than described setting power when the source current that offers described antenna unit reduces suddenly and compensates, thereby perhaps plasma ion density in the described chamber and energy is remained in the setting range.
17. reactor according to claim 16 wherein depends on the degree of ionization that injects the reacting gas in the described chamber and etch process is provided and etch process is provided in the high ionization zone at low ionized space, and
Wherein when the source current less than described setting power is provided for described antenna unit, described plasma reactor is carried out etch process in described low ionized space, and when the source current greater than described setting power was provided for described antenna unit, described plasma reactor was carried out etch process in described high ionization zone.
18. reactor according to claim 16, wherein when described plasma reactor was carried out etch process to the wafer with 200mm diameter, described setting power was in the scope of 500W to 700W.
19. reactor according to claim 16, wherein when described plasma reactor is carried out the real time chamber clean operation, described source current unit provides source current to described antenna unit, and described high RF power subsystem and low frequency RF power subsystem stop to provide bias RF power to described negative electrode, and described source current switch unit switches shutoff, and described plasma reactor is carried out the high density plasma chamber cleaning course under the situation that wafer is not installed on the described negative electrode.
20. reactor according to claim 16, wherein said source current switch unit comprises:
The source current filter is used for getting rid of other frequency signals except the source current frequency to carrying out filtering by described negative electrode from the source current that described aerial coil receives; And
Switch is used for described source current filter being electrically connected to ground connection or being connected with ground connection disconnection.
CN2007100868758A 2006-03-21 2007-03-21 Hybrid plasma reactor Expired - Fee Related CN101043784B (en)

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US20070221331A1 (en) 2007-09-27
CN101043784B (en) 2011-01-26

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