CN102585721B - 用于发光器件的粘合剂膜和使用该膜制造led封装件的方法 - Google Patents

用于发光器件的粘合剂膜和使用该膜制造led封装件的方法 Download PDF

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CN102585721B
CN102585721B CN201210010336.7A CN201210010336A CN102585721B CN 102585721 B CN102585721 B CN 102585721B CN 201210010336 A CN201210010336 A CN 201210010336A CN 102585721 B CN102585721 B CN 102585721B
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luminescent device
sided adhesive
adhesive layer
double
binder film
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Expired - Fee Related
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CN201210010336.7A
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CN102585721A (zh
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朴娜娜
朴一雨
李圭珍
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
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    • H01—ELECTRIC ELEMENTS
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)

Abstract

本发明提供一种用于LED芯片的粘合剂膜，包括：双面粘合剂层，使得LED芯片被粘接至其上部表面，并且使得引线框架被粘接至其下部表面；紫外线固化层，其被粘接至双面粘合剂层的一个表面；以及上部覆盖层和下部覆盖层，其分别被粘接至双面粘合剂层和紫外线固化层的暴露于外部的面。

Description

用于发光器件的粘合剂膜和使用该膜制造LED封装件的方法
相关申请的交叉引用
本申请要求于2011年1月14日在韩国知识产权局提交的韩国专利申请No.10-2011-0004162的优先权，其公开内容通过引用合并于此。
技术领域
本发明涉及用于发光器件的粘合剂膜和使用该膜制造发光二极管(LED)封装件的方法，具体而言，涉及用于发光器件的粘合剂膜，该膜用于在与电极的连结过程期间实质上减少从发光器件发射的光中的光损失，并且涉及使用这种膜制造LED封装件的方法。
背景技术
发光二极管(LED)(一种半导体光源)是一种能够发出具有各种颜色的光的半导体器件，这是通过当对p型半导体和n型半导体之间的结部分施加电流时电子与电子空穴在p型半导体和n型半导体之间的结部分中的再结合实现的。
由于LED与使用灯丝的光源相比具有延长的寿命、低功耗、卓越的初始驱动特性、高抗振性以及其他正面的特性，因此对于LED的需求不断增加。
具体而言，能够发射短波长区域的蓝色光的第III族氮化物半导体LED已被大量需要。
在用于液晶显示器(LCD)背光单元的发光模块的情况下，已经使用了根据相关技术的冷阴极荧光灯(CCFL)，但是由于CCFL使用汞气体进行操作，所以这会导致环境污染。此外，CCFL以低速响应时间进行操作、具有较低的颜色复现性并且不适合于供轻便的、薄的且紧凑的LCD面板使用。
与根据相关技术的CCFL相比，LED是环境友好的并且能够以几个纳秒的高速响应时间进行操作，从而对于视频信号流是有效的，LED还能够被脉冲地驱动。
另外，LED具有100％的颜色复现性，并且不仅能够对通过红色、绿色和蓝色LED发射的光量进行调节以选择性地改变亮度、色温等，还可以适合于供轻便的、薄的且紧凑的LCD面板使用。因此，当前的趋势是积极地采用LED作为用于背光单元的发光模块。
根据相关技术，为了将LED作为上述发光器件粘接至诸如引线框架之类的电极的顶部，在引线框架上点上树脂，然后按压LED并将其粘接至引线框架。
例如，在通过使用诸如阶状销(stepping pin)之类的器件利用搅拌器粘合树脂涂覆引线框架的顶部之后，将LED芯片粘接至引线框架。
然而，上述根据相关技术的LED粘接方法依赖于粘合树脂的性质经常会引起拖尾效应或滴效应(dripping effect)等，并且在制造LED封装件时在单个产品中点上的粘合树脂的量不是恒定的。
此外，在制造LED封装件时，通常执行晶片接合(die bonding)工艺并随后完成热固工艺。由于在热固工艺期间，根据传送至点在引线框架上的树脂的热分布水平，LED各个部分上的树脂均匀性会变得不同，因此会产生LED的所点部分的体积改变以部分地降低LED的亮度。
为了使用LED封装件作为蓝色发光模块等，可以制造实质上阵列形式的LED封装件。此时，应当将多个LED芯片晶片接合至衬底，但该方法会使得工作效率被显著地降低。
发明内容
本发明的一个方面提供一种用于发光器件的粘合剂膜和使用该膜制造LED封装件的方法，其中所述发光器件被粘接至电极以保持树脂均匀性，从而在保持相对最大亮度值的同时显著地减少光损失。
本发明的另一个方面提供一种制造LED封装件的方法，其能够通过缩短的工艺过程来改进工作效率，其中当制造阵列形式的LED封装件时，在无需晶片接合工艺的情况下将多个LED芯片简单地粘接至衬底的顶部。
根据本发明的一个方面，提供一种用于发光器件的粘合剂膜，所述粘合剂膜包括：双面粘合剂层，使得所述发光器件被粘接至所述双面粘合剂层的上部表面，并且使得电极被粘接至所述双面粘合剂层的下部表面；紫外线(UV)固化层，其被粘接至所述双面粘合剂层的一个表面；以及上部覆盖层和下部覆盖层，其分别被粘接至所述双面粘合剂层和所述UV固化层的暴露于外部的面。
所述双面粘合剂层可以由下列材料形成：包含硅的热固树脂，或者基于橡胶的、基于丙烯酸酯的、基于硅的、基于环氧树脂的和基于乙烯基的材料中的一种材料或它们的混合物，或者高透光性的基于矿物的材料。
所述双面粘合剂层还可以包括金属、陶瓷和碳纳米管中的一种。
所述双面粘合剂层还可以包括导电粒子。
所述双面粘合剂层还可以包括高辐射填充物。
所述双面粘合剂层还可以被形成为包括多个单元粘合剂层，所述单元粘合剂层被切割为具有与所述发光器件的尺寸相对应的尺寸。
所述双面粘合剂层可以被提供有位置引导部件，所述位置引导部件形成在发光器件粘接表面的边界部分上，以便将LED引导至所述双面粘合剂层的上部表面上的发光器件粘接位置。
在此，所述位置引导部件可以是下列中的一种：在所述双面粘合剂层的上部表面中形成的沟槽部件、在所述双面粘合剂层的上部表面上形成的凸起部件、以及在所述双面粘合剂层的上部表面上的标记。
根据本发明的另一个方面，提供一种制造LED封装件的方法，该方法包括：通过顺序地层叠下部覆盖层、UV固化层、粘合剂层和上部覆盖层来制备粘合剂膜；移除所述粘合剂膜的上部覆盖层；将至少一个LED芯片粘接至所述粘合剂膜的粘合剂层的暴露的上部表面上；对被提供有所述LED芯片的所述粘合剂膜进行UV硬化，所述LED芯片被粘接至所述粘合剂膜；除去经过UV固化的粘合剂膜的UV固化层和下部覆盖层；布置具有暴露于芯片安装区域的电极的封装件体；以及将所述粘合剂膜的暴露的粘合剂层的下部表面粘接至暴露于所述芯片安装区域的电极。
在此，所述LED芯片可以按照倒装芯片的方式被粘接至所述电极的顶部。
所述电极可以是一对引线框架，其被设置为部分地暴露于所述封装件体的芯片安装区域，并且所述粘合剂膜的暴露的粘合剂层的下部表面可以被粘接至所述引线框架中的一个的暴露区域。
UV硬化温度范围可以为从160℃至180℃。
制造LED封装件的方法还可以包括在移除所述上部覆盖层之后，将多个LED芯片粘接至所述粘合剂层的暴露的上部表面，使得所述多个LED芯片彼此间隔开，然后将所述粘合剂膜切割成与各个LED芯片相对应。
制造LED封装件的方法还可以包括在移除所述上部覆盖层之后，将晶圆粘接至所述粘合剂层的暴露的上部表面，将所述粘合剂膜切割成多个单元粘合剂膜，以具有与所述LED芯片的尺寸相对应的尺寸，然后通过使用单元粘合剂膜的晶圆制造LED芯片。
可以执行所述粘合剂膜的制备以包括：首先将所述粘合剂层切割成与各个LED芯片相对应，然后将切割的粘合剂层彼此间隔开地层叠在所述UV固化层上。
粘合剂膜的制备还可以包括在LED芯片粘接表面的边界部分上形成位置引导部件，以便在所述UV固化层上层叠所述粘合剂层之后将LED引导至层叠的粘合剂层上的LED芯片粘接位置。
根据本发明的另一个方面，提供一种制造LED封装件的方法，该方法包括：通过顺序地层叠下部覆盖层、UV固化层、粘合剂层和上部覆盖层来制备粘合剂膜；移除所述粘合剂膜的上部覆盖层；将晶圆粘接至所述粘合剂膜的粘合剂层的暴露的上部表面上；将被提供有所述晶圆的粘合剂膜切割成多个单元粘合剂膜以具有与LED芯片的尺寸相对应的尺寸，所述晶圆被粘接至所述粘合剂膜；通过使用单元粘合剂膜的晶圆制造各个LED芯片；对被制造为各个LED芯片的所述粘合剂膜进行UV硬化；除去经过UV固化的粘合剂膜的UV固化层和下部覆盖层；布置具有暴露于芯片安装区域的电极的封装件体；以及将所述粘合剂膜的暴露的粘合剂层的下部表面粘接至暴露于所述芯片安装区域的电极。
附图说明
通过以下结合附图的详细说明，将更加清晰地理解本发明的上述和其他方面、特征以及其他优点，其中：
图1是根据本发明的一个实施例的粘合剂膜的侧视图；
图2是已经移除了上部覆盖层的图1的粘合剂膜的侧视图；
图3是发光器件被粘接至图2的粘合剂膜的粘合剂层的上部表面的粘合剂膜的侧视图；
图4是切割成各个发光器件的图3的粘合剂膜的侧视图；
图5是使用根据本发明实施例的粘合剂膜彼此粘接的结合发光器件与电极的侧视图；
图6是根据本发明的另一个实施例的粘合剂膜的侧视图；
图7是示出了在根据本发明的一个实施例的粘合剂膜的粘合剂层中提供的位置引导部件的一个示例的侧视图；
图8是示出了在根据本发明的一个实施例的粘合剂膜的粘合剂层中提供的位置引导部件的另一个示例的侧视图；以及
图9是根据本发明的另一个实施例的粘合剂膜的侧视图。
具体实施方式
现在将参考附图对各实施例进行详细说明，使得本发明所属领域的技术人员能够容易地实践这些实施例。然而，在描述本发明的各实施例中，将省略已知的功能或结构的详细描述，从而不会使得本发明的描述被不必要的细节模糊。
另外，相同的附图标记始终表示相同的元件。
除非相反地明确描述，否则词语“包括”及其变形(诸如“包含”或“包括有”)将被理解为意味着包括所陈述元件但没有排除其他元件。
参考图1至图5，根据本发明的一个实施例的用于发光器件的粘合剂膜可以包括：粘合剂层40，在其两个面上都形成有粘合强度，以便将发光器件粘接至粘合剂层40的上部表面并且将电极60粘接至粘合剂层40的下部表面；UV固化层，其被粘接至粘合剂层40的下部表面；以及上部覆盖层20和下部覆盖层10，其分别被粘接至粘合剂层40的上部表面和UV固化层30的下部表面。
在此，发光器件可以是当对其施加电信号时发出光的光电器件，并且在此情况下，可以应用各种光电器件，例如，根据本发明的一个实施例可以应用发光二极管(LED)芯片50。在本实施例中，将LED芯片50描述为示例。
可以将电极60形成为部分地暴露于封装件体的外部以被用作端子，当将LED封装件安装在衬底上时，通过该端子施加外部电信号。电极60可以由具有卓越的热导率的金属材料形成，例如Au、Ag、Cu等，其能够增加电导率并且能够平稳地辐射热。
在根据本实施例的结构的情况下，LED芯片50可以不采用导线而以倒装芯片接合方式被安装在电极60上，但是根据使用的芯片的类型这种连接方式可以是不同的，并且没有将本发明特别限定于此。
例如，可以由一对引线框架构成电极，其被设置以部分地暴露于封装件体的芯片安装区域上。在此，可以将粘合剂膜(LED芯片被粘接至该粘合剂膜)中的暴露的粘合剂层的下部表面粘接至引线框架中的一个中的暴露区域的上部表面，以便与其直接电连接。可以将LED芯片构造为通过导线被连接至设置在相反的方向处的引线框架。
此外，将导线提供为布线结构的示例，但是可以利用其中能够实现电信号传输功能的不同形式的布线结构来适当地取代，例如金属线等。
可以将粘合剂层40形成为保持具有最小限度的厚度，以便显著地增加从LED芯片50发出的光中的光效率，并且可以将粘合剂层40形成为具有50μM或更小的厚度。
为了显著地增加从LED芯片50发出的光中的光效率，该膜应当是透明的以增加折射和透光率，即可以由具有相对较高的折射率和卓越的透光率的材料来形成粘合剂层40，例如，包含硅的热固树脂，或者基于橡胶的材料、基于丙烯酸酯的材料、基于硅的材料、基于环氧树脂的材料和基于乙烯基的材料中的一种材料或它们的混合物，并且在一些情况下还可以由高透光性的基于矿物的材料来形成粘合剂层40。
另外，在粘合剂层40的情况下，可以将例如金属、陶瓷和碳纳米管之类的高热传导材料添加至粘合剂层40，以便保证平稳的热辐射。
在根据本实施例的倒装芯片型LED封装件的情况下，可以添加导电粒子作为LED芯片50与电极之间的电路径，并从而改进电连接性能。
在将LED封装件用于对其施加高电平电流的高功率产品的情况下，相对较高的热不仅会流向LED封装件还会流向连接至该LED封装件的粘合剂膜。由于上述热固树脂，或者基于橡胶的、基于丙烯酸酯的、基于硅的、基于环氧树脂的和基于乙烯基的材料中的一种材料或它们的混合物，或者基于矿物的材料等，在高温环境下会具有恶化的热特性，因此可以将具有卓越的辐射特性的Al2O3、B2O3等填充物添加至粘合剂层40。
与此同时，在将LED芯片50粘接至粘合剂膜之后，可以在制造单个产品时垂直地切割粘合剂膜以与LED芯片50的尺寸相对应。在一些情况下，如图6所示，可以将粘合剂层首先构造为与LED芯片50的数量一致的多个切割的单元粘合剂层40’，然后可以在单元粘合剂层40’的两个面上将UV固化层30和上部覆盖层20构造为被粘接至单元粘合剂层40’。
在粘合剂层40的上部表面上，可以在其中与LED芯片50的粘接表面的边界部分相对应的位置上形成位置引导部件，以便将LED引导至LED芯片50的粘接位置。
可以将位置引导部件形成为如图7所示的在粘合剂层40的上部表面中向下凹陷形成的沟槽部件61，或者可以将位置引导部件形成为如图8所示的从粘合剂层40的上部表面向上凸起形成的凸起部件62。除此之外，可以不同地形成能够被工人的肉眼识别的简单标记等。
可以由具有卓越的耐热属性的材料来形成上部覆盖层20和下部覆盖层10，该材料能够经受160℃至180℃、或170℃或更高的晶片接合UV硬化温度。在此，上部覆盖层20可以防止在要粘接LED芯片50的粘合剂层40的上部表面上发生刮擦、可以保护粘合剂层不受外部物质影响、还可以在将LED芯片50粘接至粘合剂层40的上部表面时被移除。可以提供下部覆盖层10以保护要粘接电极60的粘合剂层40的下部表面，并且可以在被粘接至电极60时移除下部覆盖层10。
可以形成UV固化层30以防止在不使用UV固化层30的情况下发生这样的缺陷，其中下部覆盖层10被牢固地粘贴至粘合剂层40的下部表面，从而不容易从粘合剂层40的下部表面分开。即，在UV硬化时，UV固化层30可以与下部覆盖层10一起从粘合剂层40的下部表面分离。可以按照热固方案来制造UV固化层30，使得在晶片接合期间UV固化层30不会发生反应，但是也可以按照其他方案来制造UV固化层30，并没有限定于此。
将描述根据本发明的一个实施例的、使用如上所述的粘合剂膜配置来制造LED封装件的方法。
首先，制备粘合剂膜，其包括顺序层叠的下部覆盖层10、UV固化层30、粘合剂层40以及上部覆盖层20。
在制备粘合剂膜中，可以在层叠在UV固化层30之上的粘合剂层40的上部表面上形成位置引导部件61或62，即，在其中与LED芯片50的粘接表面边界部分相对应的位置上形成位置引导部件61或62，以便将LED引导至LED芯片50的粘接位置，使得工人可以确认LED芯片50的粘接位置以进行工作。
可以将位置引导部件61或62形成为向下凹陷或向上凸起，并且还可以通过其他各种方案来形成位置引导部件61或62，例如，印制能够被工人的肉眼识别的简单标记等。
随后，可以从粘合剂膜移除上部覆盖层20，并且可以将LED芯片50粘接至粘合剂膜的暴露的粘合剂层40的上部表面。在本实施例中描述了将多个LED芯片50彼此间隔开地以倒装芯片的方式粘接至粘合剂层40，但是这些发光器件的种类、形式或数量并没有限定于此。
例如，参考图9，作为LED芯片的材料的晶圆50’可以被粘接至粘合剂层40的上部表面，并且可以沿着虚拟切割线将粘合剂膜切割为具有与LED芯片的尺寸相对应的尺寸以产生单元粘合剂膜，然后，可以将单元粘合剂膜的晶圆50’制造为各个LED芯片。
与此同时，根据本实施例，可以按照条状形状的阵列形式来制造LED封装件，但是在生产只将LED芯片50中的每一个粘接至单个产品封装件的情况下，可以执行关于各个LED芯片沿着切割线41切割粘合剂膜的另外的操作。
另外，在粘合剂膜制造操作中，可以首先将粘合剂层切割成单元粘合剂层40’以便具有包括封装件与LED芯片50之间的间隔的布置，并且可以将单元粘合剂层40’彼此间隔开地粘接至UV固化层30的顶部，然后可以在单元粘合剂层40’上粘接上部覆盖层20以制造粘合剂膜。此时，当UV固化层30和下部覆盖层10对于单个产品封装件来说是多余的时，可以省略上述对粘合剂膜的切割操作。
此外，在制造单元粘合剂层40’时，可以一起切割粘合剂层，使得将UV固化层30和下部覆盖层10粘接至各个单元粘合剂层40’的下部表面。
然后，粘接了LED芯片50的粘合剂膜可以在160℃至180℃、或170℃或更高的温度下进行UV固化，随后可以顺序地移除下部覆盖层10和UV固化层30。
UV硬化是通过使用紫外线将液体粘合剂硬化成为固化的固体状态。在紫外线硬化的情况下，从紫外线灯产生的强烈的紫外线光能被提供至光引发剂(light initiator)作为引发元素之间的化学反应的能量，使得单体和低聚物(紫外线硬化涂料的主要成分)被即刻改变为聚合物。此时，在一个大气压力和25℃的标准状态下单体和低聚物是液体，但是当该液体成为聚合物时，单体和低聚物被改变为固体状态。
可以在没有稀释剂或溶剂的情况下执行UV硬化工艺，从而在硬化或印制之后减少环境污染因素并且特别提供了几项卓越的物理属性(通常在热固树脂中很少见)，例如，在硬化之后的改进的抛光、抗磨损性、表面硬度和粘附强度等。
接下来，可以制备封装件体，其中形成要暴露于芯片安装区域的电极，然后可以将粘合剂层40的下部表面粘接至暴露于芯片安装区域的电极的顶部以制造LED封装件。
在此，在LED芯片50的情况下，可以不使用导线而按照倒装芯片接合的方式将粘合剂层40直接粘接至电极60的顶部。在电极由一对引线框架构成的情况下，粘合剂膜的暴露的粘合剂层的下部表面可以被粘接，以便直接电连接至引线框架中的一个的暴露区域的顶部，并且LED芯片可以被构造为通过导线连接至相对的引线框架。
在本实施例中，在以卷状物(roll)形式在长度方向上提供粘合剂膜并且制造工艺不是针对单个产品的情况下，可以将多个LED芯片50沿着粘合剂膜的长度方向成一直线地设置在粘合剂膜上，从而本实施例可以应用于电视机的背光单元、照明设备、台灯的全部长度、用于移动电话的照明设备等，从而在提高附加价值的同时简化组件的制造和组装工艺。
如上所述，在根据本发明的一个实施例的用于发光器件的粘合剂膜中，可以将多个发光器件装配在电极上以保持树脂均匀性，从而显著地减少从发光器件发出的光中的光损失，该光损失是由于根据现有技术的发光器件或各个发光器件的粘接位置的不均匀的晶片接合造成的。
具体而言，使用根据本发明的实施例的用于发光器件的粘合剂膜来制造LED封装件的方法对于这样的情况会相对更加有用，其中以晶圆状态来粘接LED芯片或者以不使用导线而通过将LED芯片直接电连接至电极的倒装芯片的方式来制造封装件。
此外，当制造阵列形式的LED封装件时，可以将各个LED芯片在没有晶片接合工艺时粘接至以卷状物形式形成的粘合剂膜，然后可以根据需要切割粘合剂膜以将封装件制造为单个产品，从而简化工作过程并改进可加工性。
虽然已经结合本发明中的各实施例示出并描述了本发明，但是对于本领域技术人员来说应当清楚的是，在不背离由所附权利要求书定义的本发明的精神和范围的情况下，可以进行修改和改变。

Claims (12)

1.一种用于发光器件的粘合剂膜，包括：
双面粘合剂层，使得所述发光器件被粘接至所述双面粘合剂层的上部表面，并且使得电极被粘接至所述双面粘合剂层的下部表面；
紫外线固化层，其被粘接至所述双面粘合剂层的一个表面；以及
上部覆盖层和下部覆盖层，其分别被粘接至所述双面粘合剂层和所述紫外线固化层的暴露于外部的面，
其中，在进行紫外线硬化时，所述紫外线固化层与所述下部覆盖层一起从所述双面粘合剂层的所述一个表面分离。
2.权利要求1的用于发光器件的粘合剂膜，其中所述发光器件是LED芯片。
3.权利要求1的用于发光器件的粘合剂膜，其中所述双面粘合剂层由下列材料形成：基于橡胶的、基于丙烯酸酯的、基于硅的、基于环氧树脂的和基于乙烯基的材料中的一种材料或它们的混合物，或者高透光性的基于矿物的材料。
4.权利要求1的用于发光器件的粘合剂膜，其中所述双面粘合剂层由包含硅的热固树脂形成。
5.权利要求1的用于发光器件的粘合剂膜，其中所述双面粘合剂层还包括金属、陶瓷和碳纳米管中的一种。
6.权利要求1的用于发光器件的粘合剂膜，其中所述双面粘合剂层还包括导电粒子。
7.权利要求1的用于发光器件的粘合剂膜，其中所述双面粘合剂层还包括高辐射填充物。
8.权利要求1的用于发光器件的粘合剂膜，其中所述双面粘合剂层被形成为包括多个单元粘合剂层，所述单元粘合剂层被切割为具有与所述发光器件的尺寸相对应的尺寸。
9.权利要求1的用于发光器件的粘合剂膜，其中所述双面粘合剂层被提供有位置引导部件，所述位置引导部件形成在发光器件粘接表面的边界部分上，以便将所述发光器件引导至所述双面粘合剂层的上部表面上的发光器件粘接位置。
10.权利要求9的用于发光器件的粘合剂膜，其中所述位置引导部件是在所述双面粘合剂层的上部表面中形成的沟槽部件。
11.权利要求9的用于发光器件的粘合剂膜，其中所述位置引导部件是在所述双面粘合剂层的上部表面上形成的凸起部件。
12.权利要求9的用于发光器件的粘合剂膜，其中所述位置引导部件是在所述双面粘合剂层的上部表面上的标记。
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