CN102576682A - 半导体装置的制造方法 - Google Patents
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Abstract
本发明提供一种半导体装置的制造方法,能够有效地抑制半导体封装件和基板双方的刚性、及热膨胀系数的不同导致的一侧相对大的翘曲、变形、焊锡层等的损伤。由下述工序构成:在成形模K内配置电极(4)、散热焊盘(3)、半导体元件(1)并注入树脂,在该树脂固化前的未固化体(5′)的与散热焊盘(3)相反一侧的侧面配置剥离膜(6),且在剥离膜(6)的侧面配置刚性材料(7),未固化体(5′)固化而形成密封树脂体(5),由此制造半导体封装件的中间体(10)的工序;经由回流焊接在中间体(10)和基板(20)之间形成焊锡层(30)的工序;及从剥离膜(6)拆下刚性材料(7)的工序,通过将刚性材料(7)组装入中间体(10),使该中间体(10)和基板(20)双方的热膨胀系数及刚性近似。
Description
技术领域
本发明涉及半导体封装件和基板经由焊锡层接合而成的半导体装置的制造方法。
背景技术
随着近年的电子设备的多功能化、高性能化、小型化,进一步要求半导体零件的高密度安装,如何实现半导体封装件的小型化(薄型化)和散热性提高这两方面成为该领域重要的技术课题之一。而且,作为这样的半导体封装件,可以列举CSP(Chip Size Package:小尺寸封装)、BGA封装(Ball Grid Array:球栅阵列)、LGA封装(Land Grid Array:栅格阵列)、MCP(Multi Chip Package:多晶片封装)、SiP(System inPackage:***封装)等。
从半导体封装件的小型化(薄型化)的观点来说,将电极端子的一部分不在树脂中密封,而在封装件的底面、侧面露出,以不引出导线的无导线类的半导体封装件被导入市场。
另外,从半导体封装件的散热性的观点来说,将具有散热板的功能的模焊盘(散热焊盘)的一部分不封入树脂中而露出的构造的半导体封装件、内装另外的散热板的构造的半导体封装件被导入市场。
在从密封树脂体中完全地露出散热焊盘,或使其一部分露出的构造的半导体封装件中,与内装另外的散热板的构造相比,相对而言散热性良好,适于搭载发热量多的半导体元件的情况。
图7、8表示在基板上安装上述的无导线类且散热焊盘的一部分或全部露出的构造的半导体封装件而成的半导体装置的一实施例。,图示例表示散热焊盘的全部从密封树脂体露出的构造,即在与密封树脂体的基板相对的侧面完全露出散热焊盘的构造的半导体装置,图7是其纵剖面图,图8是图7的VIII-VIII向视图。
图7、8中,半导体元件a以通过导电性粘接剂等小片接合材料b接合的姿势搭载于散热焊盘c上,通过导线e与电极d1、d2(最外周侧为d1)电连接。此外,在密封半导体元件a的密封树脂体f的下表面配置散热焊盘c和电极d1、d2(电极的一部分、散热焊盘的一部分也可以埋设于密封树脂体内),并形成半导体封装件P。该半导体封装件P的散热焊盘c及电极d1、d2、基板g经由焊锡层h接合,由此形成半导体装置H。
但是,在图7、8所示的现有的半导体装置H中,公知有在通过回流焊接接合散热焊盘c及电极d1、d2、基板g的过程中,在封装件P和基板g双方作用有回流焊接时的热,在封装件P中,在组装之后到安装的期间,其内部吸收的水分产生气化膨胀。
另外,通常,还已知有基板g与半导体封装件P相比为相对的高刚性,且热膨胀系数相对低(因此,难以热变形)。
因此,在上述回流焊接时,相对于高刚性且热膨胀少的基板g,半导体封装件P为相对低刚性且热膨胀大,因此,例如半导体元件a的区域向基板g侧突出,离开该半导体元件a的区域的电极d1、d2附近呈现相对于基板g向相反侧翘曲的变形模式。例如图示例所示,在其中央位置配置有半导体元件a,在其外周侧配置有电极d1、d2的构造的半导体封装件P中,具有电极d1、d2的周缘区域呈现相对于基板g向相反侧翘曲的变形模式(图7中点划线)。
其结果,将配置于半导体封装件P的外周的电极d1、d2和基板g连接,并且即使在该半导体封装件P的构成部件中也会在构造薄弱部即焊锡层h作用剪断力、拉伸力Q而容易产生剥离、龟裂之类的问题,半导体封装件P的过度的变形导致的半导体元件a和散热焊盘c之间的剥离、散热焊盘c和密封树脂体f之间的剥离、可在密封树脂体f上产生的裂缝等问题显著化,在该技术领域成为当务之急的解决课题之一。
在此,对现有的公开技术转换视线,在专利文献1中公示有一种半导体封装件,为了防止上述的半导体封装件的翘曲、该翘曲引起的半导体装置构成部件的破损,而在半导体装置的厚度中心配置散热板,以相对于该中心线成线对称的方式在其上下分别配置半导体元件、模制树脂、***基板而构成。
而且,在构成该半导体封装件的两个***基板中,以半导体封装件的热膨胀系数为代表,最终使将该半导体封装件通过回流焊接接合的安装基板的热膨胀系数和上述半导体封装件的热膨胀系数近似,由此,降低半导体封装件和安装基板的位移量差。
但是,容易理解将半导体封装件制成相对于其厚度中心线对称的构成带来制造困难性和由此引起的制造成本增加的问题,此外,从现实的侧面考虑,不得不说所述上下对称或左右对称的半导体封装件缺乏通用性,因此,难说是用于消除上述的该技术领域的解决课题的现实且有效的对策。
专利文献1:日本特开2006-93679号公报
发明内容
本发明是为解决上述的问题而创立的,其目的在于,提供一种半导体装置的制造方法,在半导体封装件中不实施任何特殊的构造改良,通过对在基板上利用回流焊接接合半导体封装件而制造半导体装置的制造过程加以改良,能够有效地抑制半导体封装件和基板双方的刚性及热膨胀系数的不同导致的一侧的相对大的翘曲、变形、由此引起的焊锡层等的损伤。
为了实现所述目的,本发明提供一种半导体装置的制造方法,由散热焊盘、搭载于该散热焊盘上的半导体元件、配置于离开该散热焊盘的位置并与半导体元件电连接的电极、及至少密封半导体元件的密封树脂体形成半导体封装件,将散热焊盘和电极分别经由焊锡层与基板接合而形成所述半导体装置,其中,包括如下工序:第一工序,在成形模内配置所述电极、所述散热焊盘及所述半导体元件并注入所述密封树脂体用的树脂,且在该树脂固化前的未固化体的与所述散热焊盘相反一侧的侧面配置剥离膜,在该剥离膜的与所述未固化体相反一侧的侧面配置刚性材料,所述未固化体固化而形成所述密封树脂体,由此制造半导体封装件的中间体;第二工序,在形成从所述成形模取出的半导体封装件的中间体的所述散热焊盘及所述电极与所述基板之间通过回流焊接形成所述焊锡层;第三工序,将所述刚性材料从所述剥离膜拆下,通过将所述刚性材料组装入所述半导体封装件的中间体,使该半导体封装件的中间体和所述基板双方的热膨胀系数及刚性近似。
本发明的制造方法其主要目的在于,在所述制造过程中抑制或制止尤其是在回流焊接半导体封装件和基板(电路基板)时的高温环境下,半导体封装件和基板双方的刚性和热膨胀系数不同引起的该半导体封装件的翘曲(例如,在半导体元件配置于半导体封装件的中央的情况下,其中央区域向基板侧突出,配置有电极的其周缘区域相对于基板沿着相反一侧的变形模式)、该翘曲导致的尤其是在将周缘区域的电极和基板连接的焊锡层容易产生的剥离、龟裂等。
作为用于此的制造方法的特征构成,在第一工序即制造半导体封装件的工序中,在其构成部件即密封树脂体(固化前的未固化体)中,在与基板相对的侧面的相反一侧的侧面临时安装用于提高半导体封装件整体的刚性的刚性材料。
半导体封装件为半导体元件用由适当的树脂构成的密封树脂体密封并在其一侧面配置了散热焊盘和电极(外部电极)的构成(它们的一部分也可以埋设于密封树脂体内),但通常,该密封树脂体占据半导体封装件整体尺寸的较多部分,因此,半导体封装件整体的热膨胀系数、刚性较大地依据该密封树脂体所具有的热膨胀系数、刚性。
例如,在密封树脂体由环氧树脂构成的情况下,其热膨胀系数大致为60ppm/K程度,决定刚性的杨式模量为3~4GPa程度。
另一方面,在基板由玻璃环氧树脂构成的情况下,其热膨胀系数为10ppm/K程度,其杨式模量为20GPa程度,从而与半导体封装件相比基板的刚性可以极其高,热变形量可以极其小。虽然这是因双方的形成原材料而其背离的程度发生变化,但可以视为一般的倾向,因此,在回流焊接过程中,产生已述的变形模式和起因于此而在焊锡层产生剥离、龟裂的情况可以视为一般的课题。
当然,在要将部件的变形模式由该部件的热膨胀系数和弯曲刚性规定的情况下,该弯曲刚性不仅以杨式模量,而且还以其剖面刚性(剖面惯性矩等)为其决定主要因素,因此,当然与部件的剖面形状、尺寸相关。
因此,在本发明的制造方法中,在制造半导体封装件的过程即在将半导体元件、搭载该半导体元件的散热焊盘、与半导体元件电连接的电极制为一体的密封树脂体的成形过程中,在密封树脂体用的树脂固化的前段的未固化体的阶段,在其中的散热焊盘的相反一侧的侧面(即,在后工序经由焊锡层连接的基板侧的侧面的相反一侧的侧面),临时安装对半导体封装件的整体赋予刚性且抑制半导体封装件整体的热变形量的刚性材料。在此所说的半导体封装件整体的热变形量的抑制的意思是,例如,将与密封树脂体相比高刚性且低热膨胀系数的刚性材料作为半导体封装件的中间体的构成要素,由此,该刚性材料抑制在高温环境下要相对大地变形的密封树脂体的变形量,由此,抑制半导体封装件整体的热变形量。
例如,该刚性材料可以由具有与基板同程度的刚性(或杨式模量)和热膨胀系数的原材料、与基板相同的原材料、进而虽然与基板具有同程度的热膨胀系数但具有比基板高的刚性(或杨式模量)的原材料等形成。当然,该刚性材料只要是如下刚性材料,则其形成原材料、尺寸、剖面形状、平面形状就没有特别的限定,即所述刚性材料在配置该刚性材料而成的半导体封装件的中间体和基板之间,在回流焊接时的高温环境下,使双方的热变形量近似,且能够以由一侧相对大的热变形对另一侧作用的拉伸力成为不对介于其间的焊锡层造成损伤的程度的方式调整半导体封装件的中间体整体的刚性、热变形量。
另外,所谓“使半导体封装件的中间体和所述基板双方的热膨胀系数及刚性近似”,包括双方的热膨胀系数和刚性相同及成为近似值这两方面,关于成为该近似值的意思是,使该半导体封装件整体的热膨胀系数和刚性与基板的热膨胀系数和刚性近似,以将半导体封装件的热变形抑制到在半导体装置中的构造薄弱部即焊锡层不产生剥离、龟裂、割裂等的程度。
而且,经由第二工序形成焊锡层,接着,经由第三工序将上述的刚性材料从剥离膜拆下,由此,在形成半导体封装件的同时,制造半导体装置。
在此,对未固化体配置剥离膜,经由该剥离膜在未固化体上配置刚性材料,由此,保障从固化的密封树脂体容易地拆下刚性材料。
该剥离膜为由与刚性材料之间具有剥离性、或剥离性优异的树脂原材料的薄膜、带、片材等形成的膜,可以列举氟树脂、聚酯、聚丙烯、聚酰胺、聚酰胺酰亚胺等,进而在它们的表面实施了氟树脂涂敷的膜等。
另外,也可以由与密封树脂体用的树脂相同原材料的树脂形成剥离膜,在该情况下,剥离膜容易追随密封树脂体的热变形,通过回流焊接时的密封树脂体的热变形,有效地抑制薄层的剥离膜破断等。
另外,也可以适用如下方式的刚性材料,即在所述刚性材料的剥离膜侧的侧面设置有突起,在将该刚性材料配置于所述未固化体的侧面时,将该突起埋入未固化体。
通过将单个或多个突起埋入密封树脂体内,在回流焊接过程中半导体封装件的中间体发生变形时,能够抑制刚性材料从该中间体脱落,因而,在焊锡层形成过程中,能够保障刚性材料对于中间体整体的刚性赋予,能够保障中间体整体相对于基板的过度的热变形抑制。
此外,优选的是,在第三工序中拆下的所述刚性材料在制造另外的半导体装置时转用。
在第三工序结束后,刚性材料经由剥离膜容易地从密封树脂体拆下且不损伤其接合面地拆下,因此,能够将拆下的刚性材料直接转用到另外的半导体装置的制造。
因此,在上述的刚性材料进行的半导体封装件整体的热变形的抑制、及通过所述转用而提高成品率的基础上,能够降低制造成本,并实现品质良好的半导体装置的制造。
从以上的说明能够理解,根据本发明的半导体装置的制造方法,对半导体装置自身不施加任何的构造的变更、改良,在其制造过程尤其是在制造半导体封装件时,通过仅应用使该半导体封装件整体的刚性和热膨胀系数与基板的刚性和热膨胀系数近似的刚性材料的极其简易的制造方法改良,可以不增加制造成本,而有效地抑制在连接半导体封装件和基板的回流焊接时的高温环境下的焊锡层的损伤等问题。
附图说明
图1是说明表示本发明的半导体装置的制造方法的第一工序的示意图;
图2是接着图1说明第一工序的示意图;
图3是接着图2说明第一工序的示意图;
图4是说明经由第一工序制造的半导体封装件的中间体的示意图;
图5是说明表示本发明的半导体装置的制造方法的第二工序的示意图;
图6是说明表示本发明的半导体装置的制造方法的第三工序、所制造的半导体装置的一实施方式的示意图;
图7是现有的半导体装置的纵剖面图,是说明半导体封装件的热变形模式、和由该变形对焊锡层作用拉伸力的图;
图8是图7的VIII-VIII向视图。
标号说明:
1…半导体元件、
21…小片接合层、
22…导线、
3…散热焊盘、
4…电极(外部电极)、
5…密封树脂体、
5’…未固化体、
6…剥离膜、
7…刚性材料、
71…突起、
10…半导体封装件的中间体、
10A…半导体封装件、
20…基板、
30…焊锡层
具体实施方式
下面,参照附图说明本发明的实施方式。当然,图示的半导体装置、其构成部件的纵剖面形状、半导体元件、电极的配置位置等不限于图示例,半导体装置还可以收容于外部壳体内。
图1~图3是按顺序说明表示本发明的半导体装置的制造方法的第一工序的示意图,图4是说明经第一工序制造的半导体封装件的中间体的示意图。另外,图5是说明表示本发明的半导体装置的制造方法的第二工序的示意图,图6是说明表示本发明的半导体装置的制造方法的第三工序、和所制造的半导体装置的一实施方式的示意图。
首先,如图1所示,准备具备具有应成形的密封树脂体的外形尺寸的内空的成形模K,在其内部收容散热焊盘3和搭载于其上的半导体元件1及电极4。
在此,例如由硅芯片等构成的半导体元件1经由导电性粘接剂等小片接合层21固定于例如由铜、其合金等构成的散热焊盘3上,半导体元件1和电极4通过导线22电连接,在向成形模K收容之前,它们的一部分或全部也可以预先组装为一体。
在图示例中,为在成形模K的底面设有定位收容散热焊盘3和电极4的凹槽且在该凹槽内收容散热焊盘3、电极4的实施例。因此,在将它们收容于成形模K的凹槽内的姿势中,它们的上表面与成形模的底面成为一个面,在后工序成形密封树脂体时,它们的全部形成从密封树脂体的底面突出的半导体封装件,但是,也可以使它们的一部分从成形模K的底面向上方突出,在密封树脂体的内部形成埋设该突出的部位的构造。
接着,如图2所示,向成形模K内注入密封树脂体用的树脂,形成密封树脂体的未固化体5’。
在此,该密封树脂体用的树脂没有特别限定,但是,例如可以应用由热固化性的环氧单体、环氧低聚物、环氧预聚物等环氧化合物和固化剂构成的原材料等。
形成密封树脂体的未固化体5’后,在其固化之前,在其上表面即未固化体5’中的散热焊盘3的相反一侧的侧面敷设剥离膜6。
在此,该剥离膜6只要由在后工序与配置于该侧面的刚性材料之间有剥离性、或剥离性优异的原材料构成就没有特别限定,但是,例如由树脂原材料的薄膜、带、片材等形成,可以使用氟树脂、聚酯或聚丙烯、聚酰胺、聚酰胺酰亚胺等,进而在它们的表面实施了氟树脂涂敷的膜等。
接着,在未固化体5’的一侧面配置剥离膜6,且在该未固化体5’固化前,如图3所示,将在刚性材料7的局部具备突起71的刚性材料7配置于剥离膜6的表面,对其进行按压,将突起71埋入未固化体5’,而使该未固化体5’、剥离膜6、刚性材料7成为一体。
在此,经由剥离膜6配置于未固化体5’的一侧面的刚性材料7的原材料、形状、尺寸等虽没有特别限定,但是,应用至少在进行后工序的与基板的回流焊接时能够抑制半导体封装件(的中间体)比基板过度地变形,或过度地翘曲的原材料、形状、尺寸的刚性材料。例如,为具有与基板同程度的刚性(或杨式模量)和热膨胀系数的原材料、与基板同样的原材料、进而虽然具有与基板同程度的热膨胀系数但具有比基板高的刚性(或杨式模量)的原材料等,可以由氧化铝等陶瓷、铁、钢、铝、其合金、玻璃环氧等形成。
通过未固化体5’固化而成形密封树脂体5,从而形成将半导体元件1、散热焊盘3、电极4、剥离膜6、刚性材料7由密封树脂体5一体化而成的半导体封装件的中间体10(第一工序)。图4表示从成形模K取出的半导体封装件的中间体10。
在制造半导体封装件的中间体10后,接着,通过回流焊接将构成该中间体10的散热焊盘3及电极4、基板20接合。
在此,基板20(电路基板、配线基板)由玻璃环氧、氧化铝、氧化锆等陶瓷等构成,通常,其刚性(杨式模量)比密封树脂体5高,其热膨胀系数比密封树脂体5小。
在基板20的规定部位或在电极4、散热焊盘3上配置焊锡膏(也包含焊锡球等),在调整为200~230℃程度的炉内使焊锡膏溶融固化,由此,如图5所示,经由焊锡层30将半导体封装件的中间体10和基板20接合(第二工序)。
在该第二工序即回流焊接时的高温环境下,如同图所示,相比基板20的热变形量:δ3,没有刚性材料7的情况下的半导体封装件的中间体10整体的热变形量:δ1相对变大,在其周缘侧,可能产生相对于基板20向相反侧翘曲的变形模式(翘曲量:δ2)。
这是依据,在密封树脂体5由一般的形成原材料即环氧树脂构成且基板20由玻璃环氧树脂构成的情况下,环氧树脂的热膨胀系数大致为60ppm/K程度,决定刚性的杨式模量大致为3~4GPa程度,与此相对,玻璃环氧树脂的热膨胀系数为10ppm/K程度,其杨式模量为20GPa程度。
而且,即使在变更了密封树脂体5、基板20各自的形成原材料的情况下,通常该热膨胀系数、杨式模量的大小倾向也没有大的变更。
半导体封装件的中间体10相对于基板20相对较大地热变形,且相对于基板20向相反侧大幅挠曲,由此,在连接基板20和半导体封装件的中间体10的焊锡层30上作用超过该焊锡层30所具有的耐力(剪断耐力、拉伸耐力等)的过度的拉伸力、剪断力等,可能导致龟裂、剥离等。
相对于该现象,在如图5所示的半导体封装件的中间体10中,在其上表面(密封树脂体5中与基板20相反一侧的侧面)对该中间体10的整体赋予刚性,且配置能够抑止密封树脂体5的过度热变形的刚性材料7,由此,在密封树脂体5要发生热变形时,能够使与该热变形方向相反方向的剪断力:S等作用于该密封树脂体5。其结果是,密封树脂体5的热变形量:δ1、翘曲量:δ2被抑制,能够将作用于焊锡层30的拉伸力、剪断力等调整为不产生剥离、龟裂的程度。
另外,图示的刚性材料7具有埋设于密封树脂体5内的突起71,因此,该突起担当剪断键的作用,有效地防止刚性材料7从密封树脂体5脱落。
在形成焊锡层30并将半导体封装件10和基板20的一体单元冷却而抑制其整体的热变形并且经热收缩成为常温时的状态的阶段,刚性材料7被从密封树脂体5取下,如图6所示,在形成半导体封装件10A的同时(不存在刚性材料7的封装件构成),制造半导体装置100。
刚性材料7相对于密封树脂体5不是直接安装,而是经由剥离膜6间接地安装,因此,该刚性材料7的拆卸可以极其顺畅,而且能够不会伤及刚性材料7的安装面地执行。
另外,该拆卸下的刚性材料7可转用到另外的半导体装置的制造,在其耐久期间可实现有效利用。
这样,在半导体装置的制造过程中,对半导体封装件的整体赋予刚性,且配置了抑制密封树脂体的过度的热变形的刚性材料之后,进行该半导体封装件(的中间体)和基板的回流焊接,由此,能够有效地抑制以焊锡层为首的半导体装置的构成部件间的剥离、龟裂等损伤,能够制造品质优异的半导体装置。另外,该刚性材料丝毫不是高价的材料,能够实现其转用,由此,也有助于制造成本的降低。
以上,利用附图详细说明了本发明的实施方式,但是,具体的构成不限于该实施方式,即使有不脱离本发明宗旨的范围的设计变更等也均包括在本发明中。
Claims (4)
1.一种半导体装置的制造方法,由散热焊盘、搭载于该散热焊盘上的半导体元件、配置于离开该散热焊盘的位置并与半导体元件电连接的电极、及至少密封半导体元件的密封树脂体形成半导体封装件,将散热焊盘和电极分别经由焊锡层与基板接合而形成所述半导体装置,其中,包括如下工序:
第一工序,在成形模内配置所述电极、所述散热焊盘及所述半导体元件并注入所述密封树脂体用的树脂,且在该树脂固化前的未固化体的与所述散热焊盘相反一侧的侧面配置剥离膜,在该剥离膜的与所述未固化体相反一侧的侧面配置刚性材料,所述未固化体固化而形成所述密封树脂体,由此制造半导体封装件的中间体;
第二工序,在形成从所述成形模取出的半导体封装件的中间体的所述散热焊盘及所述电极与所述基板之间通过回流焊接形成所述焊锡层;
第三工序,将所述刚性材料从所述剥离膜拆下,
通过将所述刚性材料组装入所述半导体封装件的中间体,使该半导体封装件的中间体和所述基板双方的热膨胀系数及刚性近似。
2.如权利要求1所述的半导体装置的制造方法,其中,在所述回流焊接时的高温环境下,所述半导体封装件的中间体和所述基板双方呈现近似的热膨胀量。
3.如权利要求1或2所述的半导体装置的制造方法,其中,在所述刚性材料的所述剥离膜侧的侧面设置有突起,在将该刚性材料配置于所述未固化体的侧面时,将该突起埋入未固化体。
4.如权利要求1~3中任一项所述的半导体装置的制造方法,其中,在所述第三工序中拆下的所述刚性材料在制造另外的半导体装置时转用。
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