CN102468207A - Wafer supporting plate and method for using wafer supporting plate - Google Patents

Wafer supporting plate and method for using wafer supporting plate Download PDF

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Publication number
CN102468207A
CN102468207A CN2011103292794A CN201110329279A CN102468207A CN 102468207 A CN102468207 A CN 102468207A CN 2011103292794 A CN2011103292794 A CN 2011103292794A CN 201110329279 A CN201110329279 A CN 201110329279A CN 102468207 A CN102468207 A CN 102468207A
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wafer
supporting plate
cutting
wafer supporting
scratch diskette
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CN2011103292794A
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CN102468207B (en
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关家一马
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Disco Corp
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides a wafer supporting plate capable of semi-cutting a wafer without using a cutting belt and a using method of the wafer supporting plate. The wafer supporting plate used for supporting and transporting the wafer is characterized in that the wafer supporting plate includes a wafer supporting part formed by a round recess and used for receiving the wafer for supporting; a plurality of through holes formed in the bottom of the round recess; and a frame part formed around the wafer supporting part. And a transporting module of a processing device works on the frame part.

Description

The method for using of wafer supporting plate and wafer supporting plate
Technical field
The present invention relates to be used to support and transport the method for using of wafer supporting plate and this wafer supporting plate of wafer.
Background technology
For example; In process for fabrication of semiconductor device; Forming devices such as IC, LSI respectively through be formed at each zone that the Cutting Road on the surface of the semiconductor wafer of circular plate shape (cutting apart preset lines) roughly divides with clathrate; Cut apart each zone that is formed with this device along cutting apart preset lines, thereby produce each device.
As the segmenting device that semiconductor wafer is divided into each device; The general topping machanism that is called as cutter sweep that uses; This topping machanism cuts semiconductor wafer through the bite with extremely thin cutting edge along cutting apart preset lines, thereby wafer is divided into each device.Divided like this device pack and extensively be used in the electric equipment of portable phone or PC etc.
In recent years, people require lightweight, the miniaturization of electric equipments such as portable phone or PC, require thinner device.As the technology that wafer is divided into thinner device, developed the so-called cutting techniques that is called first patterning method, and be able to practicality (for example, with reference to japanese kokai publication hei 11-40520 communique).
This elder generation's patterning method is along cutting apart preset lines forms desired depth (degree of depth that is equivalent to the fine finishining thickness of device) from the surface of semiconductor wafer slot segmentation; Then grinding be formed with on the surface slot segmentation semiconductor wafer the back side and make slot segmentation expose at this back side; Thereby wafer is divided into the technology of each device, and this technology can be processed as the thickness of device below the 50 μ m.
Formerly in the patterning method; The wafer incomplete cut-off is carried out half cut-off; Therefore need not to use the cutting belt of using when cutting fully, and in order to practice thrift cutting belt, the applicant has developed the special-purpose cutter sweep (with reference to TOHKEMY 2004-235622 communique) that is used to implement half cut-off.
Patent documentation 1 japanese kokai publication hei 11-40520 communique
Patent documentation 2 TOHKEMY 2004-235622 communiques
Patent documentation 3 spies open the 2005-166969 communique
But the special-purpose topping machanism of disclosed half cut-off does not have application widely in the patent documentation 2, under the situation of not implementing half cut-off, moves to be interrupted, and has the bad problem of productivity.In addition, if through cutting belt,,,, therefore there is sub-economic problem owing to need to use cutting belt though then can use general cutting to bring the enforcement half cut-off by the ring-shaped frame supporting wafer.
Summary of the invention
The present invention puts in view of the above problems and researches and develops, and the object of the present invention is to provide a kind of need not during with the wafer half cut-off to use the wafer supporting plate that cuts off band and the method for using of this wafer supporting plate.
According to the invention of technical scheme one, a kind of wafer supporting plate that is used to support and transport wafer is provided, this wafer supporting plate is characterised in that, comprising: wafer supporting portion, it is formed by circular depressions, takes in wafer and supports; A plurality of through holes, it is formed at the bottom of this circular depressions; And frame section, it is around this wafer supporting portion, and the delivery unit of processing unit (plant) acts on this frame section.
Be preferably, dispose anti-slide plate in the bottom of circular depressions.
According to the invention of technical scheme three, a kind of claim 1 or method for using of 2 described wafer supporting plates in processing unit (plant) is provided, wherein, this processing unit (plant) comprises: scratch diskette, it has maintenance face, and effect has the attraction that keeps wafer on this maintenance face; Machining cell, it implements predetermined processing to the wafer that remains on this scratch diskette; The 1st delivery unit, it is transported into wafer to this scratch diskette; And the 2nd delivery unit; It transports wafer from this scratch diskette, and the method for using of this wafer supporting plate is characterised in that, comprising: wafer is transported into step; The 1st delivery unit is transported into wafer in the maintenance face of this scratch diskette to this frame section effect of this wafer supporting plate of taking in wafer; Keep step, to the maintenance face effect attraction of this scratch diskette, these a plurality of through holes of the bottom through being formed at this circular depressions attract and keep wafer; Procedure of processing is implemented predetermined processing through this machining cell to wafer; Wafer transports step, makes the 2nd delivery unit that transports wafer from this scratch diskette act on this frame section of this wafer supporting plate, and removes the attraction of the maintenance face that acts on this scratch diskette, transports wafer from this scratch diskette.
Be preferably, set the degree of depth of the circular depressions of wafer supporting plate more shallow to the distance at the back side of wafer than bottom from the cutting slot that is formed at wafer.
Through coming supporting wafer by wafer supporting plate of the present invention, even do not use the topping machanism of the special use of implementing half cut-off, also need not to use the cutting band and can use general topping machanism and wafer is carried out half cut-off, therefore both economical.And wafer supporting plate of the present invention can be reused, and is therefore both economical.
Further; The surface irradiation to wafer wafer is had the laser beam of absorbefacient wavelength and implement to melt laser processing device that processing forms slot segmentation and to the inside of wafer optically focused and irradiation wafer had permeability wavelength laser beam and in the inner laser processing device that forms the upgrading layer of wafer, also can use wafer supporting plate of the present invention; Can avoid cutting the use of band, therefore both economical.
Description of drawings
Fig. 1 is the stereoscopic figure of topping machanism.
Fig. 2 is that expression comes the exploded perspective view of the appearance of supporting wafer by the wafer supporting plate of embodiment of the present invention.
Fig. 3 comes the stereogram under the state of supporting wafer by the wafer supporting plate.
Fig. 4 is the sectional arrangement drawing of wafer supporting plate.
Fig. 5 is the stereogram of representing the appearance of being cut by wafer supporting plate wafer supported.
Symbol description
2 topping machanisms
18 scratch diskettes
24 cutting units
28 bites
30 wafer supporting plates
32 circular depressions (wafer supporting portion)
33 frame sections
34 through holes
Embodiment
Below, specify execution mode of the present invention with reference to accompanying drawing.With reference to Fig. 1, represented among this figure to use wafer supporting plate of the present invention and with the stereoscopic figure of the topping machanism 2 of wafer half cut-off.
Be provided with in the front face side of topping machanism 2 and be used for importing the operating unit 4 to the indication of device such as processing conditions by the operator.Be provided with display units 6 such as CRT on device top, show on this display unit 6 to operator's guiding picture and through after the image unit the stated image of making a video recording.
Like Fig. 2 and shown in Figure 3; On surface as the device wafer W of cutting object; Mode with quadrature is formed with the 1st Cutting Road (cutting apart preset lines) S1 and the 2nd Cutting Road (cutting apart preset lines) S2, and a plurality of device D are formed on the wafer W by division through the 1st Cutting Road S1 and the 2nd Cutting Road S2.The 11st, the otch of the mark of the crystal orientation of conduct expression silicon wafer W.
With reference to Fig. 2, represented to come the exploded perspective view of the appearance of supporting wafer W among this figure by the wafer supporting plate 30 of embodiment of the present invention.Wafer supporting plate 30 has circular depressions 32, and this circular depressions 32 has the diameter bigger slightly than the diameter of wafer W, is formed with a plurality of through holes 34 in the bottom of circular depressions 32.In addition, be formed with the projection 31 chimeric in the face of circular depressions 32 with the otch of wafer W 11.
Wafer supporting plate 30 has the frame section 33 around circular depressions 32, and the delivery unit of topping machanism 2 acts on this frame section 33 and transports wafer supporting plate 30.Wafer supporting plate 30 is preferably formed by resin, but also can be formed by metals such as aluminium.
Wafer supporting plate 30 is used for wafer W is carried out half cut-off, thus the degree of depth of circular depressions 32 be set to than from the bottom of the cutting slot that is formed at wafer W to the shallow slightly degree of depth of the distance at the back side of wafer W.For example, if the thickness of wafer W is 700 μ m, the degree of depth of cutting slot is 100 μ m, and then the depth ratio 600 μ m of circular depressions 32 are shallow, for example are set to 500 μ m.
Fig. 3 representes the wafer supporting portion of circular depressions 32 as supporting wafer W, makes that the projection 31 of wafer supporting plate 30 is chimeric with the otch 11 of wafer W, and wafer W is inserted the stereogram under the state in the circular depressions 32.Preferably, shown in the sectional arrangement drawing of Fig. 4, dispose anti-slide plate 36 in the bottom of the circular depressions 32 of supporting wafer.
On anti-slide plate 36, also be formed with a plurality of through holes 37 that are communicated with through hole 34.Through anti-slide plate 36 is set in the bottom as the acting circular depressions 32 of wafer supporting portion, thus prevent by wafer supporting plate 30 come supporting wafer W and in the process of transporting wafer W fly out from circular depressions 32.
Refer again to Fig. 1, in wafer case 8, taken in many pieces by wafer supporting plate 30 wafer supported W.Wafer case placed on the cassette elevator 9 that can move up and down in 8 years.
Dispose at the rear of wafer case 8 and to transport into unit 10, this transports into unit 10 and transports the wafer W before the cutting from wafer case 8, and the wafer after will cutting is transported into wafer case 8.
In wafer case 8 and transport to be provided with between the unit 10 and temporary transient carry that to put the zone that transports into the wafer W of object be interim put area 12, in interim put area 12, disposing the wafer W contraposition in certain locational bit cell 14.
Near interim put area 12, dispose delivery unit 16; This delivery unit 16 has turning arm; This turning arm adsorbs the frame section 33 of the wafer supporting plate 30 that has supported wafer W and transports; The wafer W that transports interim put area 12 is transported unit 16 absorption and is transported on the scratch diskette 18, on the maintenance face of this scratch diskette 18, is attracted, and remains on the scratch diskette 18 through the frame section 33 that is fixed wafer supporting plate 30 by a plurality of clamping plate 19.
Scratch diskette 18 constitutes and can rotate and can on X-direction, carry out back and forth movement, above the mobile route of the X-direction of scratch diskette 18, disposes the aligned units 20 of the Cutting Road that should cut that detects wafer W.
Aligned units 20 has the image unit of being made a video recording in the surface of wafer W 22, can detect the Cutting Road that should cut through processing such as pattern match according to the image of obtaining through shooting.The image of being obtained by image unit 22 is displayed on the display unit 6.
Dispose cutting unit 24 in the left side of aligned units 20,24 pairs of this cutting units remain on the wafer W of scratch diskette 18 and implement cut.Cutting unit 24 constitutes with aligned units 20 one, and both link and on Y direction and Z-direction, move.
Cutting unit 24 is installed bite 28 and is constituted at the front end of the main shaft that can rotate 26, and can on Y direction and Z-direction, move.Bite 28 is positioned on the extended line of X-direction of image unit 22.
The wafer W that completion is cut transports from scratch diskette 18 through delivery unit 25 and is transported to rotation wash mill 27, is spinned by rotation wash mill 27 and washs and spin drying.
Below, the as above method for using of the wafer supporting plate 30 of the embodiment of the present invention of structure is described.The method for using of wafer supporting plate comprises the steps: that wafer is transported into step, and the delivery unit 16 that is transported into wafer W acts on takes in the also frame section 33 of the wafer supporting plate 30 of supporting wafer W, wafer W is transported into the maintenance face of scratch diskette 18; And the maintenance step, with the maintenance face of attraction force acts in scratch diskette 18, a plurality of through holes 34 of the bottom of the circular depressions 32 through being formed at wafer holding plate 30 attract and keep wafer W.
As stated, after scratch diskette 18 attracts and keeps wafer W, implement wafer W is carried out the cutting step of cut through wafer supporting plate 30 by cutting unit (machining cell) 24.About this cutting step, will describe with reference to Fig. 5.
With reference to Fig. 5, represented among this figure to cut by the stereogram of the appearance of wafer supporting plate 30 wafer supported W along Cutting Road through cutting unit 24.The 25th, the main shaft housing of cutting unit 24 can have been taken in main shaft 26 rotatably in main shaft housing 25, and this main shaft 26 rotates driving through not shown servo motor.Bite 28 is electroforming cuttves, has the cutting edge 28a that in the nickel mother metal, disperses diamond whetstone grain to form at its peripheral part.
The 40th, the cutter that covers bite 28 covers, and the not shown cutting (operating) water nozzle that extends along the side of bite 28 is installed and will cuts water to be ejected into the cutting edge 28a of bite 28 and the cutting water injection nozzle 46 of the contact area between the wafer W.
Cutting water from cutting water supply unit 44 supplies to not shown cutting (operating) water nozzle through managing 42, supplies to cutting water injection nozzle 46 through managing 48.Cutting water for example is pressurised into about 0.3MPa in cutting water supply unit 44, with the flow of 1.6～2.0 liters of per minutes from 46 injections of cutting water injection nozzle.
The 50th, the loading and unloading lid can be installed on the cutter lid 40 through screw 52 with loading and unloading.Loading and unloading are covered 50 and are had the cutting (operating) water nozzle 54 that extends along the side of bite 28, and cutting water supplies to cutting (operating) water nozzle 54 through managing 56.
The 60th, the blade of blade sensor that is built-in with breach or the abrasion of the cutting edge 28a that detects bite 28 detects piece, can be installed on the cutter lid 40 through screw 62 with loading and unloading.Blade detects the adjustment screw 64 that piece 60 has the position of adjustment blade sensor.
Along Cutting Road S1, S2 cutting by wafer supporting plate 30 wafer supported W before, through known gimmicks such as pattern match, aiming between the Cutting Road S1 that enforcement should be cut, S2 and the cutter 28.
After implementing aligning; Carry out the contraposition between the 1st Cutting Road S1 and the bite 28; With scratch diskette 18 in Fig. 5 by moving on the X-direction shown in the arrow X; And with bite 28 in the direction high speed rotating (for example 30000rpm) of arrow A, make cutting unit 24 descend, on the 1st Cutting Road S1 after the contraposition, form the slot segmentation of the predetermined degree of depth (degree of depth suitable) with the fine finishining thickness of device.
The degree of depth of this slot segmentation forms the top degree of depth of the frame section 33 that does not arrive wafer supporting plate 30, for example is 100 μ m.As stated, through carrying out half cut-off, thereby under the situation of not damaging wafer supporting plate 30, can form the slot segmentation of desired depth by 28 pairs of wafer W of bite.
Cut when calibration is seen off on Y direction according to the Cutting Road spacing that is stored in memory with cutting unit 24, thereby, form identical slot segmentation the whole half cut-ofves of the 1st Cutting Road S1.In addition, if with scratch diskette 18 revolve turn 90 degrees after, carry out cutting same as described above, then, form identical slot segmentation with the whole half cut-ofves of the 2nd Cutting Road S2.
Like this; After the procedure of processing of implementing all Cutting Road S1, S2 half cut-off; Remove the attraction of scratch diskette 18; The adsorption section of delivery unit 25 is acted on the frame section 33 of wafer supporting plate 30 and attracts and keep wafer supporting plate 30, be transported to rotation wash mill 27, dry through spin washing and the spin of 27 pairs of wafer W of rotation wash mill.
Then, after boundary belt was pasted on the surface of wafer W, grinding was formed with the back side of the wafer of slot segmentation through the back side grinding step of using grinding attachment, makes slot segmentation be exposed at this back side outward, thereby can wafer W be divided into each device D.
According to above-mentioned execution mode of the present invention; Through coming supporting wafer W by wafer supporting plate 30, thereby even do not use the topping machanism of the special use of carrying out half cut-off, and use general cutter sweep and do not use cutting belt; Also can carry out half cut-off to wafer W, therefore very economical.And wafer supporting plate 30 can be reused, and is therefore both economical.
In above-mentioned execution mode to wafer supporting plate 30 of the present invention is applicable to that the example of topping machanism 2 is illustrated; But wafer supporting plate 30 of the present invention is not limited to such method for using, the present invention be equally applicable to surface irradiation to wafer W wafer W is had the laser beam of absorbefacient wavelength and implement to melt laser processing device that processing forms slot segmentation and to the inside of wafer W optically focused and irradiation wafer W is had permeability wavelength laser beam and in the inner laser processing device that forms the upgrading layer of wafer.

Claims (5)

1. wafer supporting plate that is used to support and transport wafer is characterized in that comprising:
Wafer supporting portion, it is formed by circular depressions, takes in wafer and supports;
A plurality of through holes, it is formed at the bottom of this circular depressions; And
Frame section, it is around this wafer supporting portion, and the delivery unit of processing unit (plant) acts on this frame section.
2. wafer supporting plate according to claim 1 is characterized in that,
Dispose anti-slide plate in the bottom of this circular depressions.
3. the claim 1 in the processing unit (plant) or the method for using of 2 described wafer supporting plates, this processing unit (plant) comprises: scratch diskette, it has maintenance face, and effect has the attraction that keeps wafer on this maintenance face; Machining cell, it implements predetermined processing to the wafer that remains on this scratch diskette; The 1st delivery unit, it is transported into wafer to this scratch diskette; And the 2nd delivery unit, it transports wafer from this scratch diskette,
The method for using of this wafer supporting plate is characterised in that and comprises:
Wafer is transported into step, and the 1st delivery unit acts on this frame section of this wafer supporting plate of taking in wafer, wafer is transported into the maintenance face of this scratch diskette;
Keep step, to the maintenance face effect attraction of this scratch diskette, these a plurality of through holes of the bottom through being formed at this circular depressions attract and keep wafer;
Procedure of processing is implemented predetermined processing through this machining cell to wafer; And
Wafer transports step, makes the 2nd delivery unit that transports wafer from this scratch diskette act on this frame section of this wafer supporting plate, and removes the attraction of the maintenance face that acts on this scratch diskette, transports wafer from this scratch diskette.
4. the method for using of wafer supporting plate according to claim 3 is characterized in that,
This machining cell is made up of cutting unit, and this cutting unit has the bite of wafer being implemented cut,
In this procedure of processing, on by this wafer supporting plate wafer supported, form cutting slot.
5. the method for using of wafer supporting plate according to claim 4 is characterized in that,
The depth ratio of this circular depressions of this wafer supporting plate is shallow slightly to the distance at the back side of wafer from the bottom of the cutting slot that is formed at wafer.
CN201110329279.4A 2010-10-29 2011-10-26 The using method of wafer supporting plate and wafer supporting plate Active CN102468207B (en)

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