CN102384789A - Infrared focal plane array device and manufacture method thereof - Google Patents
Infrared focal plane array device and manufacture method thereof Download PDFInfo
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- CN102384789A CN102384789A CN2010102679822A CN201010267982A CN102384789A CN 102384789 A CN102384789 A CN 102384789A CN 2010102679822 A CN2010102679822 A CN 2010102679822A CN 201010267982 A CN201010267982 A CN 201010267982A CN 102384789 A CN102384789 A CN 102384789A
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Abstract
The invention provides an infrared focal plane array device, which comprises a substrate, a cavity, an infrared sensing layer, a reflecting layer and a cantilever beam, wherein the cavity is positioned in the substrate, the infrared sensing layer is suspended above the cavity, the reflecting layer is arranged at the bottom of the cavity and is opposite to the infrared sensing layer, the cantilever beam is suspended above the substrate, one end of the cantilever beam is fixedly connected with the substrate, the other end of the cantilever beam is fixedly connected with the infrared sensing layer, the substrate around the cavity is a heat sinking element for heat radiation, and the end of the cantilever beam connected with the substrate is connected onto the heat sinking element. Correspondingly, the invention also provides a manufacture method of the infrared focal plane array device. The infrared focal plane array device adopts a resonance absorption structure consisting of the reflecting layer, the infrared sensing layer and the cavity formed between the two layers for improving the absorption efficiency of a detection unit on infrared rays, and the manufacture of the resonance absorption structure is completely compatible with the conventional integrated circuit (IC) process.
Description
Technical field
The present invention relates to the infrared imagery technique field, particularly a kind of infrared focal plane array device and preparation method thereof.
Background technology
Infrared imagery technique is widely used in each field such as military affairs, industry, agricultural, medical treatment, forest fire protection, environmental protection, the core component of infreared imaging device be infrared focal plane array (Infrared Focal Plane Array, IRFPA).According to the principle of work classification, infreared imaging device can be divided into: photon type infrared eye and non-refrigeration type infrared eye.
The photon type infrared eye adopts the low-gap semiconductor material; Like HgCdTe, InSb etc.; Utilize photoelectric effect to realize the conversion of infrared signal to electric signal, thereby will be operated under 77K or the lower temperature, this just needs the heavy and complicated refrigeration plant of coupling; Cause this infreared imaging device to be difficult to miniaturization, carry inconvenience; On the other hand, material prices such as HgCdTe and InSb are expensive, the preparation difficulty, and incompatible with conventional IC technology, so the price of photon type infrared eye is high always.
Above-mentioned factor has all greatly hindered the widespread use of infreared imaging device (for example thermal camera), particularly aspect civilian, presses for a kind of moderate performance of exploitation, cheap new infrared video camera.The non-refrigeration type infrared eye absorbs infrared ray through infrared detecting unit, and infrared energy causes that the electrology characteristic of infrared detecting unit changes then, is converted into electric signal to infrared energy, reads this signal and handles through sensing circuit.
Infrared focal plane array device is made up of a plurality of probe units; It is the core component of non-refrigeration type infrared detector; Fig. 1 and Fig. 2 are the structural representations of present two kinds of main infrared focal plane array devices, only show the microstructure of one of them probe unit among the figure.Both all adopt amorphous silicon and VOx (vanadium oxide) to form infrared-sensitive layer 11 as thermo-sensitive resistor and realize ultrared detection.
Because the making of VOx material can not be incompatible with the IC technology of routine, thereby the infrared focal plane array device of said structure can not produce in existing integrated circuits manufacturing works on a large scale, causes device cost than higher, influences it and applies.In addition; Above-mentioned two kinds of structures are manufactured all on the silicon chip that is formed with sensing circuit; Usually have the sensing circuit silicon chip and have thicker dielectric layer, thereby form a bigger thermal capacitance, the infrared energy that absorbs on the probe unit can't in time dissipate away; Can cause crosstalking between a plurality of probe units, thereby reduce the quality of infrared imaging.
Summary of the invention
The problem that the present invention solves provides a kind of infrared focal plane array device, and its structure can adopt conventional IC manufacture craft, helps reducing cost of manufacture.
For addressing the above problem, the present invention provides a kind of infrared focal plane array device, comprising:
Substrate;
Cavity is positioned at said substrate;
The infrared-sensitive layer is suspended on the top of said cavity;
The reflection horizon is arranged at the bottom of said cavity, and is relative with said infrared-sensitive layer;
Semi-girder is suspended on said substrate top, and an end is fixedly connected with substrate, and the other end is fixedly connected with the infrared-sensitive layer.
Preferably, the substrate around the said cavity is be used to dispel the heat heat sink, the end that said semi-girder is connected with substrate promptly be connected said heat sink on.
Optional, said heat sink and substrate are one, and said cavity forms through etched substrate.
Optional, the said heat sink said substrate surface that is formed at is around forming said cavity.
Preferably, said semi-girder is arranged at said cavity top, and isolates between the said infrared-sensitive layer.
Said semi-girder is arranged at the outer substrate top of said cavity, and has the gap between the substrate.
Said semi-girder comprises electrical lead and electrical lead dielectric layer, and said electrical lead absorbs heat and spills into said heat sink from the infrared-sensitive layer.
Said infrared-sensitive layer comprises the supporting medium layer that infrared absorption layer is outer with being wrapped in said infrared absorption layer.
The material of said electrical lead is Ti, and the composite bed of TiN or Ti/TiN, the material of said infrared-sensitive layer are amorphous silicon, amorphous germanium silicon, VOx, and said heat sink material is amorphous silicon, amorphous germanium silicon or metal.
Accordingly, a kind of infrared focal plane array device is provided also, comprises:
Substrate is provided;
On said substrate, form heat sink around cavity and the cavity;
Form the reflection horizon that discharges on restraining barrier and the said release restraining barrier in said bottom;
In said cavity, fill releasing sacrificial layer;
Form infrared-sensitive layer and semi-girder at said substrate surface with releasing sacrificial layer, the gap between said semi-girder and the infrared-sensitive layer is as the release aperture in the release process;
Remove releasing sacrificial layer, thereby form hanging structure and resonance absorption structure.
Optional, specifically comprise forming heat sink around cavity and the cavity on the said substrate: in said substrate, form cavity through photoetching, etching technics, the substrate around the said cavity is heat sink.
Optional, on said substrate, form heat sink around cavity and the cavity and specifically comprise:
Deposit the 3rd dielectric layer at said substrate surface, adopt photoetching, etching technics in said the 3rd dielectric layer, to make cavity then;
In said cavity, form releasing sacrificial layer and first dielectric layer of deposit in the above;
On said first dielectric layer, form and have heat sink pattern photoresist layer;
With said photoresist layer is mask forms heat sink area in said the 3rd dielectric layer groove, exposes following substrate surface;
In said groove, fill heat sink material, thereby form heat sink.
Preferably, in said cavity, fill in the step of releasing sacrificial layer and also comprise: at the said releasing sacrificial layer that keeps specific thicknesses on heat sink.
Compared with prior art, technique scheme has the following advantages:
Infrared focal plane array device in the embodiment of the invention; The resonance absorption structure that adopts reflection horizon, infrared-sensitive layer and the cavity between them to form improves probe unit to ultrared absorption efficiency, the complete and conventional IC process compatible of the making of this resonance absorption structure; Secondly, adopting with monocrystalline silicon or monocrystalline silicon with sensing circuit is substrate, around the infrared-sensitive layer, makes forming the heat sink of heat radiation, thereby helps reducing crosstalking between the probe unit, improves the infrared imaging quality; In addition, embodiments of the invention also adopt hanging structure to increase the hot isolation effect between infrared-sensitive layer and other zones.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 and Fig. 2 are the structural representations of present two kinds of main infrared focal plane array devices;
Fig. 3 is the structural representation of infrared focal plane array device among the embodiment one;
Fig. 4 is the top view of Fig. 3;
The synoptic diagram of the method for making of Fig. 5 to Fig. 9 embodiment one infrared focal plane array device;
Figure 10 is the structural representation of infrared focal plane array device among the embodiment two;
Figure 11 to Figure 15 is the synoptic diagram of the method for making of infrared focal plane array device among the embodiment two;
Figure 16 is the structural representation of infrared focal plane array device among the embodiment three;
Figure 17 is the top view of Figure 16;
Figure 18 is a probe unit array synoptic diagram among Figure 17.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
Secondly, the present invention combines synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is example, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
For present civilian non-refrigeration type infrared eye; Reducing cost is the key of large-scale application; With the silicon planner technology be the ic manufacturing technology of core developed ripe relatively; If can utilize conventional IC technology to make the core component infrared focal plane array device of non-refrigeration type infrared eye, then will reduce the device fabrication cost greatly.
Based on this, the present invention adopts the resonance absorption structure to improve infrared detecting unit to ultrared absorption efficiency, the complete and conventional IC process compatible of the making of this resonance absorption structure; On the other hand, it is substrate that the present invention adopts with monocrystalline silicon or monocrystalline silicon with sensing circuit, particularly is manufactured with in the electrical lead zone and is beneficial to the heat sink of heat radiation, thereby help reducing crosstalking between the probe unit, improves the infrared imaging quality; On the one hand, the present invention also adopts hanging structure to increase the hot isolation effect between infrared-sensitive layer and other zones again.
Below specify the specific embodiment of infrared focal plane array device according to the invention and preparation method thereof.
Embodiment one
Fig. 3 is the structural representation of infrared focal plane array device in the present embodiment, and Fig. 4 is the top view of Fig. 3, for clearly showing innovative point of the present invention, only shows a probe unit of infrared focal plane array among the figure, and said probe unit comprises:
Infrared-sensitive layer 105 is suspended on the top of said cavity 104;
Wherein, said substrate 101 is the naked wafer of monocrystalline silicon, and cavity 104 forms through the monocrystalline silicon in the etched substrate, and cavity described in the present embodiment 104 is a rectangle, has occupied the most area of a probe unit; Substrate around the said cavity 104 be used to dispel the heat heat sink 108; The end that said semi-girder 106 is connected with substrate 101 promptly is fixedly connected on said heat sink 108 through anchor 109; In other words, after etched substrate formed cavity 104, the monocrystalline silicon sidewall around the cavity 104 was heat sink 108.
Said semi-girder 106 also is arranged at cavity 104 tops; And isolate between the said infrared-sensitive layer 105; Probe unit in the present embodiment has two semi-girders 106; They are connected to the diagonal angle (referring to Fig. 2) of infrared-sensitive layer 105, and are unsettled to support this infrared-sensitive layer 105, thereby form unsettled heat insulation structure.
Said infrared-sensitive layer 105 comprises the supporting medium layer 1052 that infrared absorption layer 1051 is outer with being wrapped in said infrared absorption layer.The material of said infrared absorption layer is amorphous silicon, amorphous germanium silicon or VOx.The material of said electrical lead is Ti, and the composite bed of TiN or Ti/TiN, said heat sink material also can be amorphous silicon, amorphous germanium silicon or metal.
The inside surface of said cavity 104 has the restraining barrier 102 of release, is used for protecting substrate at release process, and the release restraining barrier of cavity 104 bottom surfaces is provided with reflection horizon 103.Reflection horizon 103, infrared-sensitive layer 105 and the cavity between them are formed the resonance absorption structure jointly, help improving the effect of probe unit infrared absorption.The material in said reflection horizon comprises the combination of a kind of among Al, AlSi, AlSiCu and the Ni or at least two kinds.
The synoptic diagram of the method for making of the above-mentioned infrared focal plane array device of Fig. 5 to Fig. 9 said method comprising the steps of:
As shown in Figure 5; Monocrystalline substrate 101 is provided; In said substrate 101, form cavity 104 through photoetching, etching technics, it is heat sink 108 that the substrate around the cavity 104 is, and forms at cavity 104 inside surfaces to discharge restraining barrier 102; Said release restraining barrier 102 is a monox, adopts thermal oxide or CVD technology to form.
As shown in Figure 6, on the release restraining barrier 102 of said cavity 104 bottoms, form reflection horizon 103, concrete; Through the sputtering method splash-proofing sputtering metal film 103 ' in the IC technology; Apply photoresist 401 then, and return and carve, then adopt the metal erosion liquid in the IC technology to suitable thickness; Like H2SO4:H2O2 etc. said metal film 103 ' is corroded, finally form reflection horizon 103 (see figure 7)s that the resonance absorption structure needs.
As shown in Figure 7; In said cavity 104, fill releasing sacrificial layer 402; Concrete, adopt PECVD (plasma enhanced CVD) method at whole exposed substrate surface deposit low temperature amorphous silicon, remove cavity 104 outer unnecessary amorphous silicons through the flattening method in the IC technology then; Only stay the releasing sacrificial layer 402 that is used to discharge cavity 104, utilize PECVD method deposit first dielectric layer 403 at last again.
As shown in Figure 8, form infrared-sensitive layer 105 and semi-girder 106 at said substrate surface.Concrete; Deposition of amorphous silicon film (not shown) on said first dielectric layer; Photoetching, lithographic method through conventional in the IC technology are produced infrared absorption layer 1051, electrical lead 1061 by said amorphous silicon film; At last at said infrared absorption layer 1051, electrical lead 1061 surface heat oxidations formation second dielectric layer (among the figure not label); Said second dielectric layer and first dielectric layer have constituted the supporting medium layer 1052 of infrared-sensitive layer 105 and the electrical lead dielectric layer 1062 of semi-girder 106, and the gap between semi-girder 106 and the infrared-sensitive layer is as the release aperture in the release process 107.
As shown in Figure 9, remove releasing sacrificial layer 402 (see figure 8)s, thereby form hanging structure and resonance absorption structure, concrete, gaseous corrosion technology such as employing XeF2 are removed releasing sacrificial layer 402, discharge cavity 104.
Infrared focal plane array device in the present embodiment; The resonance absorption structure that adopts reflection horizon, infrared-sensitive layer and the cavity between them to form improves probe unit to ultrared absorption efficiency, the complete and conventional IC process compatible of the making of this resonance absorption structure; On the other hand, it is substrate that present embodiment adopts with monocrystalline silicon or monocrystalline silicon with sensing circuit, around the infrared-sensitive layer, makes forming the heat sink of heat radiation, thereby helps reducing crosstalking between the probe unit, improves the infrared imaging quality; On the one hand, the present invention also adopts hanging structure to increase the hot isolation effect between infrared-sensitive layer and other zones again.
Among the above embodiment, said heat sink and substrate are as a whole, and heat sink is the part of monocrystalline substrate, and formation was heat sink naturally after etching formed cavity, in fact, said heat sinkly also can form separately at substrate surface, below specify among the embodiment.
Embodiment two
Figure 10 is the structural representation of infrared focal plane array device described in the present embodiment; Same; Its probe unit also comprises: substrate 201, be positioned at the cavity 204 of said substrate 201, and be suspended on the infrared-sensitive layer 205 of the top of said cavity 204; Be arranged at said cavity 204 the bottom, with said infrared-sensitive layer 205 relative reflection horizon 203; Be suspended on the semi-girder 206 of said substrate 201 tops, an end of semi-girder is fixedly connected with heat sink 208, and the other end is fixedly connected with infrared-sensitive layer 205.
Be that with the difference of embodiment one heat sink 208 are formed at said substrate surface, by heat sink 208 around forming said cavity 204.In other words, heat sink 208 with substrate 201 be not one, but in the specifically created structure of substrate surface, and cavity 204 neither have etched substrate to form, but centers on and form through making heat sink 208.
Below further specify the method for making of above-mentioned infrared focal plane array device, Figure 11 to Figure 15 is the synoptic diagram of the method for making of infrared focal plane array device in the present embodiment.
Shown in figure 11, the naked wafer of monocrystalline silicon that the naked wafer of monocrystalline silicon is provided or has sensing circuit forms the reflection horizon 203 in cavity 204 and the cavity as substrate 201 on said substrate 201.Concrete; Deposit the 3rd dielectric layer 404 at said substrate surface; Adopt in the IC technology conventional photoetching, etching technics in said the 3rd dielectric layer 404, to produce cavity 204 then, utilize then with embodiment one in identical method form and discharge restraining barrier 202 and reflection horizon 203.
Shown in figure 12, in said cavity, form releasing sacrificial layer 402 and adopt PECVD method deposit first dielectric layer 403 in the above, formation has heat sink pattern photoresist layer 401 on said first dielectric layer 403 then.
Shown in figure 13, in said the 3rd dielectric layer 404, form heat sink 208.Concrete; With said photoresist layer 401 (seeing Figure 12) is the mask groove that in the 3rd dielectric layer 404, forms heat sink area (among the figure not label), exposes following substrate surface, in said groove, fills heat sink material; For example monocrystalline silicon, amorphous silicon or metal material, thus form heat sink 208.
Shown in figure 14, form infrared-sensitive layer 205, semi-girder 206, and release aperture 207.Concrete method for making and embodiment one are similar, repeat no more at this.
Shown in figure 15, remove releasing sacrificial layer 402 (seeing Figure 12), thereby form hanging structure and resonance absorption structure, concrete, gaseous corrosion technology such as employing XeF2 are removed releasing sacrificial layer 402, discharge cavity 204.
Among above-mentioned two embodiment, said semi-girder is positioned at the cavity top basically, and in fact, semi-girder also can be positioned at the outer substrate top of cavity, specifically in following examples, specifies.
Embodiment three
Figure 16 is the structural representation of infrared focal plane array device in the present embodiment, and Figure 17 is the top view of Figure 16, only shows a probe unit among the figure, and Figure 18 is a probe unit array synoptic diagram among Figure 17.
Like Figure 16, shown in 17, be that with the difference of previous embodiment said semi-girder 306 is arranged at heat sink 308 tops that are positioned at around the cavity 304, and has the gap between heat sink 308.Link to each other with heat sink from the end with semi-girder 306 through anchor 309, the other end links to each other with infrared-sensitive layer 305, thereby whole infrared-sensitive layer is supported.So, infrared-sensitive layer 305 almost can cover the upper area of whole cavity 304, has then increased the specular cross section of resonance absorption structure, thereby improves the absorption efficiency of infrared-sensitive layer 305.
Shown in figure 18, a plurality of probe unit 30 repeated arrangement are formed array structure, and the probe unit among the embodiment one, two also is similar.
The manufacturing approach of infrared focal plane array device and embodiment one, two are similar in the present embodiment, wherein heat sinkly can be arbitrary form among the embodiment one, two.
The main difference part is when forming releasing sacrificial layer 402, need on heat sink 308, keep certain thickness releasing sacrificial layer 402, so that after passing through release process, can between semi-girder 306 and heat sink below it, leave the gap, thereby reduce thermal conductance.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (13)
1. an infrared focal plane array device is characterized in that, comprising:
Substrate;
Cavity is positioned at said substrate;
The infrared-sensitive layer is suspended on the top of said cavity;
The reflection horizon is arranged at the bottom of said cavity, and is relative with said infrared-sensitive layer;
Semi-girder is suspended on said substrate top, and an end is fixedly connected with substrate, and the other end is fixedly connected with the infrared-sensitive layer.
2. according to the said infrared focal plane array device of claim 1, it is characterized in that the substrate around the said cavity is be used to dispel the heat heat sink, the end that said semi-girder is connected with substrate promptly be connected said heat sink on.
3. according to the said infrared focal plane array device of claim 2, it is characterized in that said heat sink and substrate are one, said cavity forms through etched substrate.
4. according to the said infrared focal plane array device of claim 2, it is characterized in that the said heat sink said substrate surface that is formed at is around forming said cavity.
5. according to claim 1 or 2 said infrared focal plane array devices, it is characterized in that said semi-girder is arranged at said cavity top, and isolates between the said infrared-sensitive layer.
6. according to claim 1 or 2 said infrared focal plane array devices, it is characterized in that said semi-girder is arranged at the outer substrate top of said cavity, and has the gap between the substrate.
7. according to the said infrared focal plane array device of claim 2, it is characterized in that said semi-girder comprises electrical lead and electrical lead dielectric layer, said electrical lead absorbs heat and spills into said heat sink from the infrared-sensitive layer.
8. according to the said infrared focal plane array device of claim 7, it is characterized in that said infrared-sensitive layer comprises the supporting medium layer that infrared absorption layer is outer with being wrapped in said infrared absorption layer.
9. said according to Claim 8 infrared focal plane array device; It is characterized in that the material of said electrical lead is Ti, the composite bed of TiN or Ti/TiN; The material of said infrared-sensitive layer is amorphous silicon, amorphous germanium silicon, VOx, and said heat sink material is amorphous silicon, amorphous germanium silicon or metal.
10. an infrared focal plane array device is characterized in that, comprising:
Substrate is provided;
On said substrate, form heat sink around cavity and the cavity;
Form the reflection horizon that discharges on restraining barrier and the said release restraining barrier in said bottom;
In said cavity, fill releasing sacrificial layer;
Form infrared-sensitive layer and semi-girder at said substrate surface with releasing sacrificial layer, the gap between said semi-girder and the infrared-sensitive layer is as the release aperture in the release process;
Remove releasing sacrificial layer, thereby form hanging structure and resonance absorption structure.
11. the method for making according to the said infrared focal plane array device of claim 10 is characterized in that, on said substrate, forms heat sink around cavity and the cavity and specifically comprises:
In said substrate, form cavity through photoetching, etching technics, the substrate around the said cavity is heat sink.
12. the method for making according to the said infrared focal plane array device of claim 10 is characterized in that, on said substrate, forms heat sink around cavity and the cavity and specifically comprises:
Deposit the 3rd dielectric layer at said substrate surface, adopt photoetching, etching technics in said the 3rd dielectric layer, to make cavity then;
In said cavity, form releasing sacrificial layer and first dielectric layer of deposit in the above;
On said first dielectric layer, form and have heat sink pattern photoresist layer;
With said photoresist layer is mask forms heat sink area in said the 3rd dielectric layer groove, exposes following substrate surface;
In said groove, fill heat sink material, thereby form heat sink.
13. the method for making according to claim 10,11 or 12 said infrared focal plane array devices is characterized in that, in said cavity, fills in the step of releasing sacrificial layer also to comprise: at the said releasing sacrificial layer that keeps specific thicknesses on heat sink.
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| CN105486412A (en) * | 2015-12-31 | 2016-04-13 | 武汉高芯科技有限公司 | Uncooled infrared focal plane array detector with overlap vertical bridge legs |
| CN106219480A (en) * | 2016-07-07 | 2016-12-14 | 烟台睿创微纳技术股份有限公司 | A kind of uncooled ir 3D MEMS system structure and preparation method thereof |
| CN107271042A (en) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | A kind of detector crosstalk measuring device, its preparation method and crosstalk measuring method |
| CN114364954A (en) * | 2019-09-16 | 2022-04-15 | 芬兰国家技术研究中心股份公司 | Heat detector |
| CN112748474A (en) * | 2020-12-31 | 2021-05-04 | 上海集成电路研发中心有限公司 | Efficient infrared detector structure |
| CN113091919A (en) * | 2021-04-12 | 2021-07-09 | 上海芯物科技有限公司 | Thermopile sensor and manufacturing method thereof |
| CN115818556A (en) * | 2022-10-25 | 2023-03-21 | 微集电科技(苏州)有限公司 | MEMS infrared light source with improved photoelectric conversion efficiency |
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