CN102378547A - Vapor chamber - Google Patents
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- CN102378547A CN102378547A CN2010102564091A CN201010256409A CN102378547A CN 102378547 A CN102378547 A CN 102378547A CN 2010102564091 A CN2010102564091 A CN 2010102564091A CN 201010256409 A CN201010256409 A CN 201010256409A CN 102378547 A CN102378547 A CN 102378547A
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Abstract
The invention discloses a vapor chamber. The upper part of the vapor chamber is a condensation part, the lower part of the vapor chamber is an evaporation part, the center part of a condensation board is provided with a groove, the inner part of the groove is fixed with a plurality of protruding cylinders, an evaporation board is a flat board, the surface of the evaporation board is fixed with a plurality of nanometer bars, the nanometer bars are formed by a sweep angle deposition technology, an electrochemical corrosion technology or a micro electroforming technology, the relative positions of the condensation board and the evaporation board are fixed after the condensation board and the evaporation board are mutually matched and are tightly adhered, and working medium can be filled into a cavity body formed after the combination of the condensation board and the evaporation board. Since the surface of the evaporation board adopts a nanometer bar structure, the radiating efficiency is obviously improved, the radiating efficiency of a small-sized electronic device with high heat-flow density is particularly better, the structure is more small-sized, the requirement for a future electronic device can be met, the vapor chamber is applicable for the radiating of a computer chip and the cooling of a light emitting diode illuminating device and a high-energy electronic chip, a photoelectricitychip or a radio frequency chip in a wireless or wired communication industry.
Description
Technical field
The present invention relates to a kind of heat radiation product, be specifically related to the high power of a kind of computer CPU, video card class, the soaking plate of microminiature cooling electronic component.
Background technology
Heat pipe is a kind of heat transfer element of the G.M.Grover invention of U.S. LosAlamos National Laboratory in 1963; It has made full use of the heat of transformation hereditary property of heat-conduction principle and working medium; Be delivered to rapidly outside the thermal source through the heat of heat pipe with thermal objects, its capacity of heat transmission surpasses the capacity of heat transmission of any known metal.Hot pipe technique was widely used in industries such as aerospace, military project in the past, since being introduced into the radiator manufacturing, made people change the mentality of designing of traditional heat-dissipating device, had opened up heat radiation industry new world.Heat pipe is a kind of heat-transfer device of passive, closed circulation, transfers to heat heat sink from thermal source.For example, in notebook computer, heat pipe is passed to radiator with heat from CPU, thereby prevents that cpu temperature is too high.Along with the development of computing mechanism technology for making, the integrated level of computer chip, size and performance improve constantly.The mean heat flux on current chip surface is near 100W/cm
2, the heat dissipation capacity of large server CPU is the tool trend that continues to increase still.Simultaneously the miniaturization of equipment requirements and design complicated also caused the inhomogeneous of Energy distribution, promptly the too high zone of amount of localized heat-" focus (heat spot) " occurred at chip surface." focus " will cause chip local surfaces temperature sharply to increase and emerge big temperature gradient, thereby influence the stable of high-performance server operation.
Heat pipe is the vacuum cavity of an inwall tool micro-structural; As shown in Figure 1, when heat conducted to the evaporating area of soaking plate by thermal source through the input of the heat in heat pipe section 16, the working medium of cavity the inside can be in the environment of rough vacuum; Just can begin to produce the phenomenon of liquid phase vaporization; This moment, working medium absorbed heat energy and volume expands rapidly, and the working medium of gas phase can be full of whole cavity very soon, colder just can produce the phenomenon of condensing when regional when gas phase working medium touches one; Discharge the heat of accumulation when evaporating through the heat deferent segment 17 in the heat pipe by the phenomenon of condensing; Liquid phase working fluid after condensing can return evaporation thermal source place by the capillarity of micro-structural, and this running will go round and begin again in cavity and carry out the function mode of soaking plate that Here it is.Again because working medium micro-structural when evaporation can produce capillary force, so the running of heat pipe can not receive the influence of gravity.
Soaking plate is identical with the principle and the Theoretical Framework of heat pipe, but the mode that heat is transmitted is inequality, and at inside heat pipe, the type of flow of steam is to be similar to one dimension, so the mode of heat pipe heat transferred is linear the transmission; And inner in soaking plate, as shown in Figure 2, the type of flow of steam is approximate two dimension, so the heat transferred mode of the heating surface 18 of soaking plate is the plane transfer mode, and is faster than heat pipe, more efficient.Say that further soaking plate can adopt the phase-change heat transfer mode on bigger area, all restrictions that utilize the heat transfer of phase transformation can solve conventional heat pipe.Present existing soaking plate can reach the heat radiation about 150W, and in addition, soaking plate also has following advantage: (1) performance receives the influence of gravity little; (2) compact conformation, in light weight; (3) can take the different types of cooling, as air-cooled, water-cooled etc.; (4) save the precious metal material, cost price is cheap.
The method for manufacturing integrated circuit that form the sixties in 20th century, to the eighties, the manufacturing technology of integrated circuit is very ripe through 20 years of development.Infiltration with technology such as photoetching, the injection of burn into ion and other chemical process methods and optics processing method has formed complete MEMS manufacturing technology.Integrated circuit surface process technology distance between centers of tracks develops into Nano grade by micron level at present.Along with the maturation of nano material preparation technology and the development of micro fabrication, on existing technical foundation, can make the nanometer rods heat pipe.Method in metal (for example copper) or semiconductor (for example silicon) thin-film material surface formation micro/nano level structure is plunderred angle deposition technique, electrochemical corrosion technology, little electroforming process technology etc.
Plunder the angle deposition technique (Glancing Angle Deposition, GLAD) be based upon windstream, plunder angle incident, shadow and cover effect and the diffusion into the surface basis oriented growth nanometer rods of coming up, be one of novel feasible nano-structure design and effective technology of preparation.Its basic principle is: see also shown in Figure 3, the rotation substrate on, on evaporation plate matrix 5; Growth forerunner or reaction primitive orientation are plunderred angle θ; With 19 incidents of inclination angle jet, utilize the shadow of early stage nucleus to cover the shadow that effect forms and cover zone 20, oriented growth nanometer rods layer 4.The characteristics of GLAD are can be through control substrate rotation, and design and control nanometer rods shape, arrangement, orientation and macroscopic symmetry are orientated, nanostructures such as the column of controllable density, spring dress.This technology obtains vertical nanometer rods easily.
The electrochemical corrosion technology is the special redox reaction process of in the liquid phase body, carrying out, and can aspect nano material preparation, use, and expands the approach that the homogeneous precipitation strategy is realized.The electrical potential difference that the metal surface that the primary cell reaction by countless short circuits constitutes takes place for electrochemical metal corrosion is to be caused by impurity or lattice defect.Oxidation product that generates in the discharge process of the two poles of the earth and reduzate deposit and are deposited in mussily the metal surface in transition process.If transfer to electrochemical corrosion course in the discrete liquid-phase system in the two poles of the earth; For precipitation reagent slowly is provided in the liquid-phase system constantly; Consider the peptizaiton of colloidal particle (nanoscale) metastable character and hydrone polarity in water; Can the combined with electrochemical corrosion process realize the homogeneous precipitation process, thereby realize preparing the purpose of metal or metal oxide nano-material through green approach.Electrochemical corrosion is in the mixed solution of hydrofluoric acid and ethanol, and silicon chip is applied the current density that is lower than electropolishing and the method that obtains porous silicon.According to the difference of its used etching apparatus, electrochemical erosion method can be divided into single groove electrochemical corrosion and double flute electrochemical corrosion again.Traditional single groove electrochemical corrosion need form at the silicon chip back side that is corroded have the good ohmic contact metal electrode as anode.Compare with single groove electrochemical corrosion; Double flute electrochemical corrosion technology adopts platinum electrode as negative electrode and anode; And silicon chip is separated into two half separate grooves with electrolysis tank in the middle of being fixed on electrolysis tank, and other part mutually insulated of two and half grooves is only realized conducting through silicon substrate.Before carrying out corrosion test, to carry out preliminary treatment to silicon chip; At first print is put into the cleaning fluid for preparing; Soak at ambient temperature, till Fails To Respond, to remove the organic pollution on surface; Rinse well with secondary deionized water then, carry out ultrasonic waves for cleaning to remove the impurity of remained on surface with acetone and ethanol respectively again.Be to soak certain hour in 20% the HF solution to remove the oxide layer on surface in concentration again, it is subsequent use to put into ethanol after rinsing well with deionized water.
Little electroforming process technology is the new ideas of establishing with respect to conventional electroforming process; It is to be applicable to the micro-structure moulding and the batch machining set up technology; Both can be regarded as the extension of the traditional galvanoplastics on the microfabrication mold foundation; Also can think mask plating in high-aspect-ratio direction result of development, be widely used in microelectromechanical systems (MEMS) technical field.The traditional electrical casting process is at the mandrel surface electrodeposit metals, makes both separation produce the technology of part then.Its basic principle with electroplate identical, its difference be electrodeposited coating will with the base material strong bonded, and electroformed layer will separate with base material (core); Thickness of plating layer generally has only several microns to tens microns, and the traditional electrical cast layer has a few tenths of a mm to arrive several millimeters, and little electroforming process technology has only sub-micron to several micron thickness.In principle, all metal or alloy that can electro-deposition all can be used for electroforming, but consider from its performance, cost and technology, and a few is with practical value for Shang Youtong, nickel, iron, nickel cobalt (alloy) etc.Has only copper and mickel industry-wide at present.
Present traditional soaking plate material is mainly utilized metal, and inner liquid sucting core structure mainly utilizes sintering metal powder.Under existing soaking plate structural condition, its radiating effect reaches the limit of, and in order to satisfy the demand of following electronic equipment dissipating heat, is necessary on the basis of existing soaking plate theory, its heat radiation potentiality to be excavated.And nano-rod shaped heat pipe can have substantive breakthroughs aspect heat radiation, the overall dimension to existing sintering metal powder type soaking plate in many aspects.Nanorod structure heat pipe class soaking plate is on the evaporation direction that than the advantage of the powder sintered type heat pipe of common metal class soaking plate nanometer rods has lower flow resistance, and is therefore more excellent than ordinary sinter type heat pipe heat radiation effect.Sintering metal powder liquid sucting core structure thickness is bigger at present, and therefore whole soaking plate thickness is compared very big with nano-rod shaped soaking plate.The preparation technology of nano material makes nanometer rods soaking plate thickness extremely thin, and whole soaking plate thickness can be less than 1mm.
Existing soaking plate mainly contains the problem of following several respects: (1) present existing soaking plate structure is too huge, causes being applied to the heat radiation of small electric subset; (2) heat-sinking capability is limited, and especially the heat-sinking capability under complex working condition still is not very good.
Summary of the invention
In order to overcome the deficiency that there is the defective that structure is huge, heat-sinking capability is limited in existing soaking plate; The objective of the invention is to: a kind of soaking plate is provided; This soaking plate is provided with nanometer rods, adopts in the porous media wick area of the evaporating surface of its nanometer rods soaking plate and plunders the angle deposition technique or the electrochemical corrosion technology generates nanometer rods as the porous media wick area.The technology that the nanometer rods soaking plate prepares institute's foundation is mainly the technology that MEMS (MEMS) is made, and comprises thin film physics growing technology, bonding techniques, etching technique etc.This soaking plate can be applied to the heat radiation of small electric subset, and can adopt the different types of cooling according to different radiating requirements.
The technical solution adopted for the present invention to solve the technical problems is following:
A kind of soaking plate, described soaking plate comprise two parts up and down, and upper part is a condensation portion, and lower part is an evaporation section, and cold plate in the condensation portion and the evaporation plate in the evaporation section are combined as a whole; The cryosurface of cold plate and the evaporating surface of evaporation plate are put relatively.The cold plate center is fluted, and inside grooves is fixed with some outstanding cylinders; Evaporation plate is a flat board; On the evaporation plate face, be fixed with some nanometer rods, this nanometer rods is to utilize to plunder the angle deposition technique perhaps through technological generation of the perhaps little electroforming process of electrochemical corrosion technology, cold plate, evaporation plate size unanimity; Relative position is fixed, fitted tightly; In the cavity of cold plate and evaporation plate combination back formation, charge into working media.
Combine the inside cavity of back formation to have capillary structure at cold plate and evaporation plate.
The capillary structure of soaking plate inside cavity is a nanometer rods, plunders angle deposition technique or electrochemical corrosion technology or little electroforming process technology in the single side surface utilization of evaporation plate and generates nanometer rods.Its nanometer rods layer forms the back and produces capillary force being filled with under the condition of working solution, drives hydraulic fluid and produces and reflux.
The inner generation of cold plate paxilla is as supporting construction and current return circuit is provided, according to the different formation method of unlike material employing of cold plate.When cold plate adopts silicon is material, then utilizes dry etch technique generation cylinder in the MEMS body micro-processing technology.When cold plate adopts copper or aluminium is material, then adopts mechanical processing tools to generate cylinder.
Owing to adopt technique scheme, make the present invention compared with prior art, have following beneficial effect:
1, adopt nanorod structure at the soaking plate evaporating surface, so heat dissipation is significantly increased, especially usefulness is better aspect the miniaturized electronics heat radiation of high heat flux.
The present invention mainly takes mechanical processing technique different with conventional sintering metal dust type soaking plate; But adopt plunder that angle deposition technique or electrochemical corrosion technology or little electroforming process technology generate nanometer rods; Nanorod structure heat pipe class soaking plate is on the evaporation direction than the advantage of the powder sintered type heat pipe of common metal class soaking plate; Nanometer rods has lower flow resistance, and is therefore more excellent than ordinary sinter type heat pipe heat radiation effect.
2,,, be fit to very much the demand of following electronic equipment therefore in structure aspects miniaturization more because the soaking plate evaporating surface adopts nanorod structure.
Soaking plate of the present invention and conventional sintering powder-type soaking plate are significantly increased in size and aspect of performance; For ordinary sinter metal dust porous media liquid sucting core structure; Thickness is greater than 1mm; Therefore metal sintering powder-type soaking plate integral thickness is bigger, can not satisfy the demand of following electronic equipment dissipating heat like this.And the porous media liquid sucting core structure of employing nanorod structure; Its nanometer rods can be according to the difference of institute's service condition; Generate the nanorod structure of different-thickness, its porous media liquid sucting core structure thickness range can reach 20nm～100 μ m, therefore; The overall structure of nanometer rods soaking plate will be less than 1mm, can satisfy requirement aspect the miniaturized electronics heat radiation of high heat flux in future.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the heat pipe principle sketch map.
Fig. 2 is the soaking plate principle schematic.
Fig. 3 is plunderred angle deposition technique sketch map.
Fig. 4 is the overall structure sketch map of metal material nanometer rods soaking plate of the present invention.
Fig. 5 is a cold plate structural representation among Fig. 4.
Fig. 6 is an evaporation plate structural representation among Fig. 4.
Fig. 7 is a matrix growing nano-rod structure for amplifying sketch map among Fig. 6.
Fig. 8 is a nanometer rods soaking plate structural representation behind the bonding.
Fig. 9 is a nanometer rods soaking plate structure sketch map after accomplishing.
Figure 10 is a semiconductor nanorods soaking plate encapsulating structure sketch map of the present invention.
Figure 11 is the structural representation after the semiconductor nanorods soaking plate encapsulates.
Figure 12 is that the semiconductor nanorods soaking plate encapsulates back structural profile sketch map.
Figure 13 is the section decomposition texture sketch map of Figure 12.
Figure 14 is nanometer rods soaking plate of the present invention and fin, combination of fans scheme of installation.
Among the figure, 1. topping up vacuum-pumping tube, 2. cold plate, 3. evaporation plate, 4. nanometer rods layer; 5. the evaporation plate matrix 6. vacuumizes with working medium and fills the hole, 7. vacuumizes the hole and working medium fills the hole, 8. places to solidify the sebific duct hole; 9. clamp-on the curing sebific duct, semiconductor nanorods soaking plate after 10. bonding is accomplished, the encapsulation of 11. semiconductor nanorods soaking plate, 12. fans; 13. radiator fins, 14. nanometer rods soaking plate, 15. outstanding cylinders, the heat input section in 16. heat pipes; 17. the heat deferent segment in the heat pipe, the heating surface of 18. soaking plate, 19. inclination angle jets, 20. shadows cover the zone.
Embodiment
Shown in Figure 4 for an embodiment of soaking plate of the present invention; This soaking plate comprises condensation portion shown in Figure 5 and these two parts of evaporation section shown in Figure 6; Above condensation portion was positioned at, below evaporation section was positioned at, the cold plate 2 of condensation portion and the evaporation plate 3 of evaporation section were combined as a whole.The evaporating surface of the cryosurface of cold plate 2 and evaporation plate 3 is put relatively, and cold plate 2 combines the back to form cavity with evaporation plate 3, has capillary structure in this inside cavity.As shown in Figure 4; On the condensation portion limit of soaking plate, a topping up vacuum-pumping tube 1 is arranged, size and position that the topping up hole of topping up vacuum-pumping tube is installed should be able to ensure the intensity of soaking plate and the requirement of heat radiation; The topping up hole is a rectangle or circular, and opens in cold plate wherein on one side.The effect of this pipe mainly contains two, and soaking plate is carried out vacuum suction and in cavity, injected working media.As shown in Figure 5, fluted at the cold plate center, the groove internal fixation has some outstanding cylinders 15.As shown in Figure 6; Evaporation plate is a flat board; Have the nanometer rods that angle deposition technique or electrochemical corrosion technology or the preparation of little electroforming process technology are plunderred in utilization on evaporation plate matrix 5 surfaces, formation nanometer rods layer 4, this structure is served as the capillary structure of reaming medium in the soaking plate; Nanometer rods layer 4 produces capillary force being filled with under the condition of working solution, drives hydraulic fluid and produces and reflux.Cold plate 2 is consistent with evaporation plate 3 sizes, puts relatively, cooperatively interacts, and relative position is fixed, and fits tightly.In the cavity that cold plate 2 and evaporation plate 3 combine the back to form, charge into working media.
The present invention shown in Figure 4 adopts the soaking plate of metal material nanometer rods, and the metal material that its cold plate and evaporation plate are adopted is copper or aluminium, because the thermal conductivity of copper, aluminum metallic material is good, and copper, aluminum metal material is beneficial to machining, and intensity can meet the demands.When soaking plate condensation portion shown in Figure 5, promptly cold plate employing copper or aluminium are material, can utilize the mode of machining to generate outstanding cylinder 15 structures as shown in the figure.Wherein the effect of outstanding cylinder 15 is: the path that 1, provides working medium to reflux; 2,, improve the soaking plate integral intensity as supporting construction.
Shown in Figure 6 is soaking plate evaporation section, i.e. evaporation plate.Evaporation plate be copper or aluminium as basis material, plunder angle deposition technique or electrochemical corrosion technology or little electroforming process technology in the one-sided utilization of evaporation plate and generate nanometer rods, the nanometer rods material can be copper or carbon.For example for plunderring the angle deposition technique, at first use clean smooth copper or aluminium sheet as substrate, grow nucleus in the substrate corrosion then, the nucleus place is later nanorod growth place.Growing nano-rod adopts sputtering technology in the physical vapour deposition (PVD); Sputter procedure is in a low vacuum chamber; Make gas ionization and form gas ions with high-tension electricity, will treat that sputtering material processes target and place negative electrode, the cation in the plasma bombards target surface with high-energy; Make the atom of treating sputtering material on the target leave target surface, deposit to anode working stylobate sheet.Plunderring the angle deposition technique mainly is to make to treat that sputtering material becomes certain inclination angle with substrate, because shadow shown in Figure 3 covers effect, its nanometer rods can not grown perpendicular to substrate surface, its growth will with base plan at angle.When substrate when at the uniform velocity rotating with a fixed angular speed, nanometer rods will with the substrate vertical-growth, the nanometer rods enlarged drawing of growth is shown in 7.
Soaking plate for forming behind metal material cold plate and the mutual bonding of evaporation plate shown in Figure 8.Metal bonding is meant that through simple metal or alloy effects such as the diffusion between dependence metallic bond, metal and wafer surface, metal melting are bonded together two wafers Face to face.At first treat bonding material and carry out surface clean earlier, surface, smooth, clean nothing are stain.Then be the face prealignment of wanting bonding, tightly be superimposed together Face to face, apply suitable pressure, put in the annealing furnace and anneal through bonding apparatus.During annealing, should under protective atmosphere, carry out, and set heating rate, annealing temperature, annealing time, rate of temperature fall etc.In annealing process, intermetallic spreads, fusion etc. mutually, is bonded together securely through metallic bond, covalent bond, hydrogen bond, van der waals force, melt-flow muscle power or atom diffusion etc., and bond strength is high.
Cold plate and evaporation plate all adopt copper as material, and two plates cooperatively interact after the back makes relative position fixing through standard molecule Diffusion Welding technology or common solder technology, vacuumize at the cold plate side to fill 6 places, hole with working medium and weld a copper pipe shown in Figure 4.The effect of copper pipe mainly contains two, and soaking plate is carried out vacuum suction and in cavity, injected working media.Cold plate and evaporation plate all adopt copper as material, through standard molecule Diffusion Welding technology or common solder technology relative position are fixed after two plates cooperatively interact.Should adopt silver solder to weld during welding, this kind welding manner can guarantee that the smooth welded seam of soaking plate welding is attractive in appearance, and weldquality is higher.Should guarantee the temperature of cryosurface and evaporating surface when carrying out welding process, prevent that copper coin Yin Wendu is too high and produce distortion and nanometer rods comes off.Welding utilizes vacuum pump that soaking plate is vacuumized after accomplishing, and vacuum should guarantee that the environment cleaning is dustless.After vacuum is accomplished, distilled water (concrete working medium is as the criterion with institute's service condition, and product utilization water of the present invention is as working medium) is carried out degasification, the process embodiment is utilized steam to take away and is dissolved in the on-condensible gas in the distilled water for distilled water is carried out heating evaporation.After this, utilize the negative pressure that forms in the cavity when before soaking plate being vacuumized that soaking plate is carried out the can topping up.Because there is best filling amount in soaking plate, the best filling amount that utilizes prior art to draw this kind of soaking plate of the present invention.After topping up is accomplished,, and fracture welded topping up vacuum-pumping tube 1 pinch off.Guarantee that soaking plate internal cavity and outside air cut off, and the interior high temperature and high pressure steam of the central cavity of use must not leak afterwards.The soaking plate that forms at last is as shown in Figure 9.
Another embodiment that adopts the soaking plate of semiconductor nanorods for the present invention shown in Figure 10; This soaking plate comprises condensation portion that structure is as shown in Figure 5 and these two parts of evaporation section shown in Figure 6; Above condensation portion is positioned at; Below evaporation section was positioned at, the cold plate 2 of condensation portion and the evaporation plate 3 of evaporation section were combined as a whole through the bonding mode.The evaporating surface of the cryosurface of cold plate 2 and evaporation plate 3 is put relatively, and cold plate 2 combines the back to form cavity with evaporation plate 3, has capillary structure in this inside cavity.As shown in Figure 4, on the condensation portion limit of soaking plate, a topping up vacuum-pumping tube 1 is arranged, the size in this topping up hole and position should be able to ensure the intensity of soaking plate and the requirement of heat radiation, the topping up hole is a rectangle or circular, and opens in cold plate wherein on one side.The effect of this pipe mainly contains two, and soaking plate is carried out vacuum suction and in cavity, injected working media.As shown in Figure 5, fluted at the cold plate center, the groove internal fixation has some outstanding cylinders 15.As shown in Figure 6; Evaporation plate is a flat board; Have the nanometer rods that angle deposition technique or electrochemical corrosion technology or the preparation of little electroforming process technology are plunderred in utilization on evaporation plate matrix 5 surfaces, formation nanometer flaggy 4, this structure is served as the capillary structure of reaming medium in the soaking plate; Nanometer rods layer 4 produces capillary force being filled with under the condition of working solution, drives hydraulic fluid and produces and reflux.Cold plate 2 is consistent with evaporation plate 3 sizes, puts relatively, cooperatively interacts, and relative position is fixed, and fits tightly.In the cavity that cold plate 2 and evaporation plate 3 combine the back to form, charge into working media.
The present invention adopts the soaking plate of semiconductor material nano-plates, and the semi-conducting material that its cold plate and evaporation plate are adopted is a silicon, because the thermal conductivity of silicon materials is good, and the processing of the micro mechanical system of silicon material is ripe, and intensity can meet the demands.
Adopt the soaking plate of semiconductor nanorods; Its soaking plate condensation portion; The structure that is cold plate is as shown in Figure 5, is material when cold plate adopts silicon, then can utilize the mode of dry etching in the MEMS body micro-processing technology to generate outstanding cylinder 15 as shown in the figure.Wherein the effect of silicon post is: the path that 1, provides working medium to reflux; 2,, improve the soaking plate integral intensity as supporting construction.Dry etching is in gas discharge, to produce plasma, and the transmission of corrosivity particle both can also can realize through orientation through diffusion.The transmission of corrosivity particle has very big influence to the characteristic of corrosion process.Dry etching is figure's molecule of leaning on corrosive agent and be corroded to such an extent that sample surfaces contacts and realizes corroding function.The step that dry etching forms cold plate mainly contains: 1, the generation of corrosive gas particle; 2, particle is to the transmission of substrate; 3, the corrosion of substrate surface; 4, the discharge of corrosion reaction thing.
Adopt the soaking plate of semiconductor nanorods, its soaking plate evaporation section, promptly the structure of evaporation plate is as shown in Figure 6.Evaporation plate be silicon as basis material, plunder angle deposition technique or electrochemical corrosion technology or little electroforming process technology generates nanometer rods in the one-sided utilization of evaporation plate, the nanometer rods material can be silicon, copper or carbon.For example for plunderring the angle deposition technique, at first use a clean smooth silicon plate as substrate, grow nucleus in the substrate corrosion then, the nucleus place is later nanorod growth place.Growing nano-rod adopts sputtering technology in the physical vapour deposition (PVD); Sputter procedure is in a low vacuum chamber; Make gas ionization and form gas ions with high-tension electricity, will treat that sputtering material processes target and place negative electrode, the cation in the plasma bombards target surface with high-energy; Make the atom of treating sputtering material on the target leave target surface, deposit to anode working stylobate sheet.Plunderring the angle deposition technique mainly is to make to treat that sputtering material becomes certain inclination angle with substrate, because shadow shown in Figure 3 covers effect, its nanometer rods can not grown perpendicular to substrate surface, its growth will with base plan at angle.When substrate when at the uniform velocity rotating with a fixed angular speed, nanometer rods will with the substrate vertical-growth.Shown in Figure 7 is the sketch map of nanometer rods structure for amplifying.
Adopt the soaking plate of semiconductor nanorods, form the soaking plate of structure as shown in Figure 8 behind the mutual bonding of its cold plate and evaporation plate.Cold plate and evaporation plate all adopt silicon as material, merge bonding techniques through standard after two plates cooperatively interact relative position is fixed.It is lower that anode linkage has a bonding temperature, better with other process compatibility, and bond strength and stability are high, and bonding apparatus is simple.What anode linkage was technological is under powerful electrostatic force, and two surfaces by bonding are pressed together; At a certain temperature, through the chemical valence bonding, silicon chip firmly is bonded together.
Cold plate and evaporation plate all adopt silicon as material; After two plates cooperatively interact and afterwards make relative position fixing through the fusion bonding techniques; Do a metallic packaging in the soaking plate outside; With whole soaking plate or part soaking plate parcel or covering, encapsulating a side has a copper pipe, and the copper pipe position cooperates with soaking plate side aperture place.Copper pipe external-open one aperture stretches into probe and clamp-ons curing glue as soaking plate encapsulation.Encapsulating material can utilize metal, for example copper.Shown in Figure 10 is the structural representation of semiconductor nanorods soaking plate encapsulating housing.At the outstanding pipe of encapsulation side, the pipe position is relative with soaking plate side tapping, and its effect mainly contains two, and soaking plate is carried out vacuum suction and in cavity, injected working media.Have one on the surface of this pipe and place curing sebific duct hole 8, shown in Figure 11 clamp-oning is installed in this hole solidifies sebific duct 9.Have one at the end face of this pipe and vacuumize the hole and working medium fills hole 7.Utilize vacuum pump that soaking plate is vacuumized, vacuum should guarantee that the environment cleaning is dustless.After vacuum is accomplished, distilled water (concrete working medium is as the criterion with institute's service condition, and product utilization water of the present invention is as working medium) is carried out degasification, the process embodiment is utilized steam to take away and is dissolved in the on-condensible gas in the distilled water for distilled water is carried out heating evaporation.After this, utilize the negative pressure that forms in the cavity when before soaking plate being vacuumized that soaking plate is carried out the can topping up.Because there is best filling amount in soaking plate, the best filling amount that utilizes prior art to draw this kind of soaking plate of the present invention.At the pipe top one aperture is arranged, it act as and gos deep into probe, and curing glue is clamp-oned in acting as of probe, and the effect of solidifying glue is mainly to be carried out vacuum suction and inject working media in the cavity and accomplish back utilization curing glue soaking plate side openings place is sealed soaking plate.After completion is sealed, probe is cut off and opens encapsulation.Guarantee that soaking plate internal cavity and outside air cut off, and the interior high temperature and high pressure steam of the central cavity of use must not leak afterwards.Shown in figure 11 is the structural representation after semiconductor material nanometer rods soaking plate encapsulates.Accomplish at last and open encapsulation, the soaking plate of its formation is as shown in Figure 9.Shown in Figure 12 is the cross-sectional view of accomplishing the semiconductor nanorods soaking plate after encapsulating.Encapsulating structure housing in the sketch map adopts cross-sectional view.Shown in Figure 13 is that the semiconductor nanorods soaking plate encapsulates back structural profile decomposing schematic representation.Demonstrate in Figure 12, Figure 13 that bonding is accomplished back semiconductor nanorods 10 and the semiconductor nanorods soaking plate encapsulates 11.Nanometer rods soaking plate that shown in Figure 14 is and fin, combination of fans scheme of installation.Employing one is installed in the fan 12 at top and is installed in the middle part among the figure radiator fins 13 and the nanometer rods soaking plate 14 of the present invention that is installed in the bottom are carried out aggregate erection.
The present invention is applicable to the computer chip heat radiation; Comprise CPU (CPU) and GPU (GPU); The present invention simultaneously also goes for light emitting diode lighting equipment (LED), the high energy electron chip of wireless telecommunications or wire communication industry or the cooling of photoelectric chip or radio frequency chip, and the present invention simultaneously can be adapted to military radar; Laser equipment, the cooling of the inner high energy heat generating components of medicine equipment or aerospace equipment.
Anyly be familiar with the professional and technical personnel; In not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be the content that does not break away from technical scheme of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (10)
1. soaking plate, described soaking plate comprise two parts up and down, and upper part is a condensation portion, and lower part is an evaporation section, and cold plate in the condensation portion and the evaporation plate in the evaporation section are combined as a whole; The cryosurface of cold plate and the evaporating surface of evaporation plate are put relatively, and it is characterized in that: the cold plate center is fluted, and inside grooves is fixed with some outstanding cylinders; Evaporation plate is a flat board; On the evaporation plate face, be fixed with some nanometer rods, this nanometer rods is to utilize to plunder the angle deposition technique perhaps through technological generation of the perhaps little electroforming process of electrochemical corrosion technology, cold plate, evaporation plate size unanimity; Relative position is fixed, fitted tightly; In the cavity of cold plate and evaporation plate combination back formation, charge into working media.
2. soaking plate according to claim 1 is characterized in that: combine the inside cavity of back formation to have capillary structure at cold plate and evaporation plate.
3. soaking plate according to claim 2; It is characterized in that: the capillary structure of described soaking plate inside cavity is a nanometer rods; Plunder angle deposition technique or electrochemical corrosion technology or little electroforming process technology in the single side surface utilization of evaporation plate and generate nanometer rods; Its nanometer rods layer forms the back and produces capillary force being filled with under the condition of working solution, drives hydraulic fluid and produces and reflux.
4. soaking plate according to claim 1; It is characterized in that: cold plate inner generate paxilla as supporting construction with current return circuit is provided; Unlike material according to cold plate adopts different formation methods; When cold plate adopts silicon is material, then utilizes dry etch technique generation cylinder in the MEMS body micro-processing technology; When cold plate adopts copper or aluminium is material, then adopts mechanical processing tools to generate cylinder.
5. soaking plate according to claim 1 is characterized in that: described cold plate and evaporation plate employing silicon or copper, aluminium material; Described nanometer rods adopts silicon, copper or carbon material.
6. soaking plate according to claim 5 is characterized in that: when described cold plate and evaporation plate all adopt copper as material, through standard molecule Diffusion Welding technology or common solder technology relative position is fixed after two plates cooperatively interact; When described cold plate and evaporation plate all adopt silicon as material, merge bonding techniques through standard after two plates cooperatively interact relative position is fixed.
7. soaking plate according to claim 1 is characterized in that: on soaking plate, open a topping up hole, the size in this topping up hole and position should be able to ensure the intensity of soaking plate and the requirement of heat radiation.
8. soaking plate according to claim 7 is characterized in that: described topping up hole is a rectangle or circular, and opens in cold plate wherein on one side.
9. soaking plate according to claim 6; It is characterized in that: cold plate and evaporation plate all adopt copper as material; Two plates cooperatively interact after the back makes relative position fixing through molecular diffusion solder technology or solder technology, the copper pipe that welding one is used to vacuumize and working medium fills at cold plate side aperture place.
10. soaking plate according to claim 6; It is characterized in that: cold plate and evaporation plate all adopt silicon as material; Two plates cooperatively interact the back through after merging bonding techniques and making relative position fixing, do a metallic packaging in the soaking plate outside, with whole soaking plate or part soaking plate parcel or cover; Encapsulating a side has a copper pipe, and the copper pipe position cooperates with soaking plate side aperture place; Copper pipe external-open one aperture stretches into probe and clamp-ons curing glue as soaking plate encapsulation.
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| CN201010256409.1A CN102378547B (en) | 2010-08-18 | 2010-08-18 | Vapor chamber |
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| CN201010256409.1A CN102378547B (en) | 2010-08-18 | 2010-08-18 | Vapor chamber |
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| CN102378547B CN102378547B (en) | 2015-07-15 |
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| CN104540373A (en) * | 2014-12-23 | 2015-04-22 | 江苏大学 | Low-melting-point alloy-silicon-based miniature cooler used for smartphone heat dissipation |
| TWI507653B (en) * | 2013-08-23 | 2015-11-11 | Asia Vital Components Co Ltd | Heat dissipation unit |
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