CN102378547B - Vapor chamber - Google Patents
Vapor chamber Download PDFInfo
- Publication number
- CN102378547B CN102378547B CN201010256409.1A CN201010256409A CN102378547B CN 102378547 B CN102378547 B CN 102378547B CN 201010256409 A CN201010256409 A CN 201010256409A CN 102378547 B CN102378547 B CN 102378547B
- Authority
- CN
- China
- Prior art keywords
- plate
- evaporation
- soaking plate
- soaking
- technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a vapor chamber. The upper part of the vapor chamber is a condensation part, the lower part of the vapor chamber is an evaporation part, the center part of a condensation board is provided with a groove, the inner part of the groove is fixed with a plurality of protruding cylinders, an evaporation board is a flat board, the surface of the evaporation board is fixed with a plurality of nanometer bars, the nanometer bars are formed by a sweep angle deposition technology, an electrochemical corrosion technology or a micro electroforming technology, the relative positions of the condensation board and the evaporation board are fixed after the condensation board and the evaporation board are mutually matched and are tightly adhered, and working medium can be filled into a cavity body formed after the combination of the condensation board and the evaporation board. Since the surface of the evaporation board adopts a nanometer bar structure, the radiating efficiency is obviously improved, the radiating efficiency of a small-sized electronic device with high heat-flow density is particularly better, the structure is more small-sized, the requirement for a future electronic device can be met, the vapor chamber is applicable for the radiating of a computer chip and the cooling of a light emitting diode illuminating device and a high-energy electronic chip, a photoelectricitychip or a radio frequency chip in a wireless or wired communication industry.
Description
Technical field
The present invention relates to a kind of heat radiation product, be specifically related to a kind of computer CPU, the high power of video card class, the soaking plate of microminiature cooling electronic component.
Background technology
Heat pipe is a kind of heat transfer element of the G.M.Grover invention of LosAlamos National Laboratory of the U.S. in 1963, it takes full advantage of the heat of transformation hereditary property of heat-conduction principle and working medium, be delivered to rapidly outside thermal source by the heat of thermal objects through heat pipe, its capacity of heat transmission exceedes the capacity of heat transmission of any known metal.Being widely used in the industry such as aerospace, military project before hot pipe technique, since being introduced into heating radiator manufacturing, making people change the mentality of designing of traditional heat sinks, open heat radiation industry new world.Heat pipe is a kind of heat-transfer device of passive, closed circulation, by heat from heat source to heat sink.Such as, in notebook computer, heat is passed to heating radiator from CPU by heat pipe, thus prevents cpu temperature too high.Along with the development of computing mechanism technology for making, the integrated level of computer chip, size and performance improve constantly.The mean heat flux on current chip surface is close to 100W/cm
2, the heat dissipation capacity of large server CPU still tool continues the trend that increases.The uneven of energy distribution be result also in the miniaturization of equipment requirement and the complicated of design simultaneously, namely occur at chip surface region-" focus (the heat spot) " that amount of localized heat is too high." focus " will cause chip local surface temperature sharply to increase and emerge large thermograde, thus affects the stable of high-performance server operation.
Heat pipe is the vacuum cavity of an inwall tool microstructure, as shown in Figure 1, when heat conducts to the evaporating area of soaking plate by thermal source by the heat input section 16 in heat pipe, working medium inside cavity can in the environment of low vacuum, just the phenomenon producing liquid phase vaporization can be started, now working medium absorbs heat energy and rapid spatial expansion, the working medium of gas phase can be full of whole cavity very soon, just the phenomenon of condensation can be produced when gas-phase working medium touches a colder region, phenomenon by condensation discharges the heat of accumulating when evaporating by the heat deferent segment 17 in heat pipe, liquid phase working fluid after condensation can return evaporation thermal source place by the capillarity of microstructure, this running will go round and begin again and carry out in cavity, the function mode of soaking plate that Here it is.Again because working medium microstructure when evaporating can produce capillary force, so the running of heat pipe can not by the impact of gravity.
Principle and the Theoretical Framework of soaking plate and heat pipe are identical, but the mode of heat trnasfer is not identical, and at inside heat pipe, the type of flow of steam is approximate one dimension, and the mode of therefore heat pipe heat transmission is linear transmission; And inner in soaking plate, as shown in Figure 2, the type of flow of steam is approximate two dimension, and therefore the heat transfer mode of the hot face 18 of soaking plate is plane transfer mode, faster than heat pipe, more efficient.Further, soaking plate can adopt phase-change heat transfer mode over a greater surface area, utilizes the heat transfer of phase transformation can solve all restrictions of conventional heat pipe.Current existing soaking plate can reach the heat radiation of about 150W, and in addition, soaking plate also has following advantage: (1) performance is little by the impact of gravity; (2) compact conformation, lightweight; (3) the different types of cooling can be taked, as air-cooled, water-cooled etc.; (4) save precious metal material, cost price is cheap.
The sixties in 20th century formed method for manufacturing integrated circuit, through more than 20 years developed into the eighties, the manufacturing technology of integrated circuit is very ripe.Complete MEMS (micro electro mechanical system) manufacturing technology is defined with the infiltration of the technology such as photoetching, burn into ion implantation and other chemical processes and optical manufacturing method.Current integrated circuit surface process technology distance between centers of tracks develops into Nano grade by micron level.Along with the maturation of nano material preparation technology and the development of micro fabrication, existing technical foundation can manufacture nanometer rods heat pipe.The method forming micro/nano level structure at metal (such as copper) or semiconductor (such as silicon) thin-film material surface plunders angle deposition technique, galvanic corrosion technology, microelectroforming technology technology etc.
Plunder angle deposition technique (Glancing Angle Deposition, GLAD) be based upon windstream, plunder angle incidence, shadow covers effect and come up in surface diffusion basis oriented growth nanometer rods, be one of effective technology of novel feasible nano-structure design and preparation.Its ultimate principle is: shown in Figure 3, on rotation substrate, as on evaporation plate matrix 5, growth forerunner or reaction primitive orientation plunder angle θ, incident with inclination angle jet 19, utilize the shadow that the shadow of early stage nucleus covers effect formation to cover region 20, oriented growth nanometer rods layer 4.The feature of GLAD can rotate by controlling substrate, design and control nanorod shape, arrangement, orientation and macroscopic symmetry, obtains the nanostructured such as column, spring dress that orientation, density are controlled.This technology easily obtains vertical nanometer rods.
Galvanic corrosion technology is the special redox reaction process of carrying out in liquid phase body, can apply in prepared by nano material, expands the approach that homogeneous precipitation strategy realizes.The electric potential difference that the metal surface be made up of the galvanic interaction of countless short circuits occurs in electrochemical metal corrosion is caused by impurity or lattice imperfection.The oxidation product generated in the discharge process of the two poles of the earth and reduzate deposit and are deposited in metal surface mussily in transition process.If electrochemical corrosion course is transferred in the discrete liquid-phase system in the two poles of the earth, for slowly providing precipitation reagent constantly in liquid-phase system, consider the peptizaiton of colloidal particle (nanoscale) metastable character and hydrone polarity in water, combined with electrochemical corrosion process can realize homogeneous precipitation process, thus realize the object preparing metal or metal oxide nano-material through green approach.Galvanic corrosion is in the mixed solution of hydrofluorite and ethanol, applies to silicon chip the method obtaining porous silicon lower than the current density of electropolishing.According to the difference of its etching apparatus used, electrochemical erosion method can be divided into again single groove galvanic corrosion and double flute galvanic corrosion.Traditional single groove galvanic corrosion needs to have the metal electrode of good ohmic contact as anode in the silicon chip back side formation be corroded.Compared with single groove galvanic corrosion, double flute galvanic corrosion technology adopts platinum electrode as negative electrode and anode, and silicon chip is fixed on and electrolytic tank is separated in the middle of electrolytic tank two separate half grooves, the other parts mutually insulated of two and half grooves, realizes conducting by means of only silicon substrate.Pre-service to be carried out to silicon chip before carrying out corrosion test, first print is put into the cleaning fluid prepared, soak at ambient temperature, till Fails To Respond, to remove the organic contaminant on surface, then rinse well by secondary deionized water, then carry out Ultrasonic Cleaning to remove the impurity of remained on surface with acetone and ethanol respectively.Be soak certain hour in the HF solution of 20% to remove the oxide layer on surface again in concentration, put into ethanol after clean with deionized water rinsing for subsequent use.
Microelectroforming technology technology is the new ideas of establishing relative to conventional electroforming process, it be applicable to micro-structure shaping and set up batch machining technology, both can be regarded as the extension of the traditional galvanoplastics on microfabrication mold foundation, also can think the result of mask plating at high-aspect-ratio future development, be widely used in microelectromechanical systems (MEMS) technical field.Traditional electrical casting process is at mandrel surface electrodeposit metals, then makes both be separated the technique producing part.Its ultimate principle is identical with plating, its difference be electrodeposited coating will with base material strong bonded, and electroformed layer will be separated with base material (core); The thickness of electrodeposited coating generally only has several microns to tens microns, and traditional electrical cast layer has a few tenths of a mm to arrive several millimeters, and microelectroforming technology technology only has sub-micron to a few micron thickness.In principle, allly the metal or alloy of electro-deposition all can be used for electroforming, but consider from its performance, cost and technique, a few is with practical value for Shang Youtong, nickel, iron, nickel cobalt (alloy) etc.At present in the industry widespread use only have copper and mickel.
Current traditional soaking plate material mainly utilizes metal, and internal wicking structure mainly utilizes sintering metal powder.Under existing soaking plate structure condition, its radiating effect reaches the limit of, and in order to meet the demand of future electronic equipment cooling, is necessary to excavate its heat radiation potentiality on the basis of existing soaking plate theory.And nano-rod shaped heat pipe can have substantive breakthroughs to existing sintering metal powder type soaking plate in many aspects in heat radiation, physical dimension.Nanorod structure heat pipe class soaking plate is on evaporation direction than the advantage of plain metal powder sintering type heat pipe class soaking plate, and nanometer rods has lower resistance to flow, therefore more excellent than ordinary sinter type heat pipe heat radiation effect.Current sintering metal powder liquid sucting core structure thickness is comparatively large, and therefore whole soaking plate thickness is very large compared with nano-rod shaped soaking plate.The preparation technology of nano material, make nanometer rods soaking plate thickness very thin, whole soaking plate thickness can be less than 1mm.
Existing soaking plate mainly contains the problem of following several respects: (1) current existing soaking plate structure is too huge, causes the heat radiation that cannot be applied to small electronic equipment; (2) heat-sinking capability is limited, and the heat-sinking capability especially under complex working condition is not still very good.
Summary of the invention
The deficiency of the limited defect of huge structure, heat-sinking capability is there is in order to overcome existing soaking plate, the object of the invention is to: a kind of soaking plate is provided, this soaking plate is provided with nanometer rods, adopts plunder angle deposition technique or galvanic corrosion technology and generate nanometer rods as porous medium wick area in the porous medium wick area of the evaporation surface of its nanometer rods soaking plate.The technology that nanometer rods soaking plate prepares institute's foundation is mainly the technology that MEMS (micro electro mechanical system) (MEMS) manufactures, and comprises thin film physics growing technology, bonding techniques, etching technique etc.This soaking plate can be applied to the heat radiation of small electronic equipment, and can adopt the different types of cooling according to different radiating requirements.
The technical solution adopted for the present invention to solve the technical problems is as follows:
A kind of soaking plate, described soaking plate comprises upper and lower two parts, and upper part is condensation portion, and lower part is evaporation section, and the cold plate in condensation portion and the evaporation plate in evaporation section are combined as a whole; The cryosurface of cold plate is relative with the evaporation surface of evaporation plate and put.Cold plate center is fluted, and inside grooves is fixed with some outstanding cylinders; Evaporation plate is a flat board, evaporation plate face is fixed with some nanometer rods, and this nanometer rods is utilized and plunders angle deposition technique or generated by galvanic corrosion technology or microelectroforming technology technology, and cold plate, evaporation plate are in the same size, make relative position fix after cooperatively interacting, fit tightly; Actuating medium is filled with in the cavity formed after cold plate and evaporation plate combine.
The inside cavity formed after cold plate and evaporation plate combine has capillary structure.
The capillary structure of soaking plate inside cavity is nanometer rods, plunders angle deposition technique or galvanic corrosion technology or microelectroforming technology technology generate nanometer rods in the single side surface utilization of evaporation plate.Its nanometer rods layer produces capillary force after being formed under the condition being filled with working fluid, drives hydraulic fluid to produce backflow.
Generation paxilla in cold plate inside is as supporting construction and provide current return circuit, and the unlike material according to cold plate adopts different formation methods.When cold plate adopts silicon to be material, then dry etch technique in MEMS (micro electro mechanical system) body micro-processing technology is utilized to generate cylinder.When cold plate adopts copper or aluminium to be material, then mechanical processing tools is adopted to generate cylinder.
Owing to adopting technique scheme, make the present invention compared with prior art, there is following beneficial effect:
1, adopt nanorod structure at soaking plate evaporation surface, therefore heat dissipation is significantly increased, and especially in the miniaturized electronics heat radiation of high heat flux, usefulness is better.
The present invention mainly takes mechanical processing technique different from conventional sintering metal powder type soaking plate, but adopt plunder that angle deposition technique or galvanic corrosion technology or microelectroforming technology technology generate nanometer rods, nanorod structure heat pipe class soaking plate is on evaporation direction than the advantage of plain metal powder sintering type heat pipe class soaking plate, nanometer rods has lower resistance to flow, therefore more excellent than ordinary sinter type heat pipe heat radiation effect.
2, because soaking plate evaporation surface adopts nanorod structure, therefore will miniaturization more in configuration aspects, be applicable to very much the demand of future electronic equipment.
Soaking plate of the present invention and conventional sintering powder-type soaking plate are significantly increased in size and aspect of performance, for ordinary sinter metal powder porous medium liquid sucting core structure, thickness is greater than 1mm, therefore sintered metal powder type soaking plate integral thickness is comparatively large, can not meet the demand of future electronic equipment cooling like this.And adopt the porous medium liquid sucting core structure of nanorod structure, its nanometer rods can according to the difference of institute's service condition, generate the nanorod structure of different-thickness, its porous medium liquid sucting core structure thickness range can reach 20nm ~ 100 μm, therefore, the one-piece construction of nanometer rods soaking plate will be less than 1mm, requirement in the miniaturized electronics heat radiation that can meet high heat flux in future.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is heat pipe principle schematic diagram.
Fig. 2 is soaking plate principle schematic.
Fig. 3 plunders angle deposition technique schematic diagram.
Fig. 4 is the one-piece construction schematic diagram of metal material nanometer rods soaking plate of the present invention.
Fig. 5 is cold plate structural representation in Fig. 4.
Fig. 6 is evaporation plate structural representation in Fig. 4.
Fig. 7 is matrix growing nano-rod structure for amplifying schematic diagram in Fig. 6.
Fig. 8 is nanometer rods soaking plate structure schematic diagram after bonding.
Fig. 9 has been rear nanometer rods soaking plate structure schematic diagram.
Figure 10 is semiconductor nanorods soaking plate encapsulating structure schematic diagram of the present invention.
Figure 11 is the structural representation after semiconductor nanorods soaking plate encapsulates.
Figure 12 is that semiconductor nanorods soaking plate carries out encapsulating rear structural profile schematic diagram.
Figure 13 is the section decomposition texture schematic diagram of Figure 12.
Figure 14 is nanometer rods soaking plate of the present invention and heat radiator, combination of fans scheme of installation.
In figure, 1. topping up vacuum-pumping tube, 2. cold plate, 3. evaporation plate, 4. nanometer rods layer, 5. evaporation plate matrix, 6. vacuumize and fill hole with working medium, 7. vacuumize hole and working medium fills hole, 8. place solidification sebific duct hole, 9. clamp-on solidification sebific duct, 10. bonding complete after semiconductor nanorods soaking plate, 11. semiconductor nanorods soaking plate encapsulation, 12. fans, 13. radiator fins, 14. nanometer rods soaking plate, 15. outstanding cylinders, heat input section in 16. heat pipes, heat deferent segment in 17. heat pipes, the hot face of 18. soaking plate, 19. inclination angle jets, 20. shadows cover region.
Embodiment
Figure 4 shows that an embodiment of soaking plate of the present invention, this soaking plate comprises these two parts of the evaporation section shown in the condensation portion shown in Fig. 5 and Fig. 6, above condensation portion is positioned at, below evaporation section is positioned at, the cold plate 2 of condensation portion and the evaporation plate 3 of evaporation section are combined as a whole.The cryosurface of cold plate 2 is relative with the evaporation surface of evaporation plate 3 and put, and forms cavity, have capillary structure in this inside cavity after cold plate 2 and evaporation plate 3 combine.As shown in Figure 4, on the condensation portion limit of soaking plate, have a topping up vacuum-pumping tube 1, size and the position of installing the topping up hole of topping up vacuum-pumping tube should be able to ensure the intensity of soaking plate and the requirement of heat radiation, topping up hole is rectangle or circle, and open at cold plate wherein.The effect of this pipe mainly contains two, carries out vacuum suction and inject actuating medium to soaking plate in cavity.As shown in Figure 5, fluted at cold plate center, groove internal fixtion has some outstanding cylinders 15.As shown in Figure 6, evaporation plate is a flat board, there is on evaporation plate matrix 5 surface the nanometer rods utilizing and plunder angle deposition technique or galvanic corrosion technology or microelectroforming technology technology and prepare, form nanometer rods layer 4, this structure serves as the capillary structure of reaming medium in soaking plate, nanometer rods layer 4 produces capillary force under the condition being filled with working fluid, drives hydraulic fluid to produce backflow.Cold plate 2 and evaporation plate 3 in the same size, relatively put, cooperatively interact, relative position is fixed, fit tightly.Actuating medium is filled with in the cavity formed after cold plate 2 and evaporation plate 3 combine.
The present invention shown in Fig. 4 adopts the soaking plate of metal material nanometer rods, and the metal material that its cold plate and evaporation plate adopt is copper or aluminium, and because the thermal conductivity of copper, aluminum metallic material is good, and copper, aluminum metal material are beneficial to machining, and intensity can meet the demands.When the soaking plate condensation portion shown in Fig. 5, namely cold plate adopts copper or aluminium to be material, and the mode of machining can be utilized to generate outstanding cylinder 15 structure as shown in the figure.Wherein the effect of outstanding cylinder 15 is: 1, provide the path that working medium refluxes; 2, as supporting construction, the intensity of soaking plate entirety is improved.
Figure 6 shows that soaking plate evaporation section, i.e. evaporation plate.Evaporation plate be copper or aluminium as matrix material, plunder angle deposition technique or galvanic corrosion technology or microelectroforming technology technology in the one-sided utilization of evaporation plate and generate nanometer rods, nanometer rods material can be copper or carbon.Such as plunderring angle deposition technique, first use a clean smooth copper or aluminium sheet as substrate, then grow nucleus at substrate corrosion, nucleus place is later nanorod growth place.Growing nano-rod adopts sputtering technology in physical vapour deposition (PVD), sputter procedure is in a low vacuum chamber, make gas ionization with high-tension electricity and form gas ions, material to be sputtered is made target and is placed in negative electrode, positive ion in plasma bombards target surface with high-energy, make the atom of material to be sputtered on target leave target surface, deposit to anode working stylobate sheet.Plunderring angle deposition technique mainly makes material to be sputtered become certain pitch angle with substrate, and because the shadow shown in Fig. 3 covers effect, its nanometer rods can not grow perpendicular to substrate surface, its growth will with base plan at angle.When substrate with at the uniform velocity rotate with a fixed angular speed time, nanometer rods will with substrate vertical-growth, the nanometer rods enlarged drawing of growth is as shown with 7.
The soaking plate for being formed after metal material cold plate and the mutual bonding of evaporation plate shown in Fig. 8.Metallic bonding refers to by simple metal or alloy, rely on metallic bond, between metal and wafer surface diffusion, metal melting etc. effect two wafers are bonded together Face to face.First treat bonding material and first carry out surface clean, make surface, smooth, clean nothing contamination.Then be the face prealignment wanting bonding, be tightly superimposed together Face to face, apply suitable pressure by bonding apparatus, put in annealing furnace and anneal.During annealing, should carry out under protective atmosphere, and set heating rate, annealing temperature, annealing time, rate of temperature fall etc.In annealing process, intermetallic spreads, mutually melting etc., and be bonded together securely by metallic bond, covalent bond, hydrogen bond, van der waals force, melt-flow muscle power or atoms permeating etc., bond strength is high.
Cold plate and evaporation plate all adopt copper as material, after making relative position fixing, vacuumize fill hole 6 place with working medium and weld the copper pipe shown in a Fig. 4 at cold plate side after two plates cooperatively interact by standard molecule Diffusion Welding technology or ordinary soldering techniques.The effect of copper pipe mainly contains two, carries out vacuum suction and inject actuating medium to soaking plate in cavity.Cold plate and evaporation plate all adopt copper as material, by standard molecule Diffusion Welding technology or ordinary soldering techniques, relative position are fixed after two plates cooperatively interact.Silver solder should be adopted during welding to weld, and this kind of welding manner can ensure that the smooth welded seam that soaking plate is welded is attractive in appearance, and weldquality is higher.The temperature of cryosurface and evaporation surface should be ensured when carrying out welding process, prevent copper coin Yin Wendu too high and generation distortion and nanometer rods come off.Utilize vacuum pump to vacuumize soaking plate after having welded, vacuum should ensure that environment cleaning is dustless.After vacuum completes, by distilled water, (concrete working medium is as the criterion with institute's service condition, product utilization water of the present invention is as working medium) carry out degasification, process embodiment, for distilled water is carried out heating evaporation, utilizes steam to take away to be dissolved in the inconduc in distilled water.After this, the negative pressure formed in cavity when vacuumizing soaking plate before utilization carries out filling topping up to soaking plate.Because soaking plate exists optimum charge of working fluid, the optimum charge of working fluid utilizing prior art to draw this kind of soaking plate of the present invention.After topping up completes, by topping up vacuum-pumping tube 1 pinch off, and fracture is welded.Ensure that soaking plate internal cavity and outside air cut off, and afterwards in the middle of use procedure in cavity high temperature and high pressure steam must not leak.The soaking plate finally formed as shown in Figure 9.
Figure 10 shows that the present invention adopts another embodiment of the soaking plate of semiconductor nanorods, this soaking plate comprises structure condensation portion as shown in Figure 5 and these two parts of the evaporation section shown in Fig. 6, above condensation portion is positioned at, below evaporation section is positioned at, the cold plate 2 of condensation portion and the evaporation plate 3 of evaporation section are combined as a whole by bonding pattern.The cryosurface of cold plate 2 is relative with the evaporation surface of evaporation plate 3 and put, and forms cavity, have capillary structure in this inside cavity after cold plate 2 and evaporation plate 3 combine.As shown in Figure 4, on the condensation portion limit of soaking plate, have a topping up vacuum-pumping tube 1, the size in this topping up hole and position should be able to ensure the intensity of soaking plate and the requirement of heat radiation, and topping up hole is rectangle or circle, and open at cold plate wherein.The effect of this pipe mainly contains two, carries out vacuum suction and inject actuating medium to soaking plate in cavity.As shown in Figure 5, fluted at cold plate center, groove internal fixtion has some outstanding cylinders 15.As shown in Figure 6, evaporation plate is a flat board, there is on evaporation plate matrix 5 surface the nanometer rods utilizing and plunder angle deposition technique or galvanic corrosion technology or microelectroforming technology technology and prepare, form nanometer flaggy 4, this structure serves as the capillary structure of reaming medium in soaking plate, nanometer rods layer 4 produces capillary force under the condition being filled with working fluid, drives hydraulic fluid to produce backflow.Cold plate 2 and evaporation plate 3 in the same size, relatively put, cooperatively interact, relative position is fixed, fit tightly.Actuating medium is filled with in the cavity formed after cold plate 2 and evaporation plate 3 combine.
The present invention adopts the soaking plate of semiconductor material nano-plates, and the semiconductor material that its cold plate and evaporation plate adopt is silicon, and because the thermal conductivity of silicon materials is good, and the processing of the micro mechanical system of silicon material is ripe, and intensity can meet the demands.
Adopt the soaking plate of semiconductor nanorods, its soaking plate condensation portion, namely the structure of cold plate as shown in Figure 5, when cold plate adopts silicon to be material, then the mode of dry etching in MEMS (micro electro mechanical system) body micro-processing technology can be utilized to generate outstanding cylinder 15 as shown in the figure.Wherein the effect of silicon post is: 1, provide the path that working medium refluxes; 2, as supporting construction, the intensity of soaking plate entirety is improved.Dry etching produces plasma in gas discharge, and the transmission of corrosivity particle both can pass through diffusion, also can be realized by orientation.The characteristic of transmission to corrosion process of corrosivity particle has a significant impact.Dry etching be by mordant figure's molecule be corroded sample surfaces contacts and realizes corrosion function.The step that dry etching forms cold plate mainly contains: 1, the generation of corrosive gas particle; 2, particle is to the transmission of substrate; 3, the corrosion of substrate surface; 4, the discharge of corrosion reaction thing.
Adopt the soaking plate of semiconductor nanorods, its soaking plate evaporation section, namely the structure of evaporation plate as shown in Figure 6.Evaporation plate be silicon as matrix material, plunder angle deposition technique or galvanic corrosion technology or microelectroforming technology technology generates nanometer rods in the one-sided utilization of evaporation plate, nanometer rods material can be silicon, copper or carbon.Such as plunderring angle deposition technique, first use a clean smooth silicon plate as substrate, then grow nucleus at substrate corrosion, nucleus place is later nanorod growth place.Growing nano-rod adopts sputtering technology in physical vapour deposition (PVD), sputter procedure is in a low vacuum chamber, make gas ionization with high-tension electricity and form gas ions, material to be sputtered is made target and is placed in negative electrode, positive ion in plasma bombards target surface with high-energy, make the atom of material to be sputtered on target leave target surface, deposit to anode working stylobate sheet.Plunderring angle deposition technique mainly makes material to be sputtered become certain pitch angle with substrate, and because the shadow shown in Fig. 3 covers effect, its nanometer rods can not grow perpendicular to substrate surface, its growth will with base plan at angle.When substrate with at the uniform velocity rotate with a fixed angular speed time, nanometer rods will with substrate vertical-growth.Shown in Fig. 7 is the schematic diagram of nanometer rods structure for amplifying.
Adopt the soaking plate of semiconductor nanorods, after its cold plate and the mutual bonding of evaporation plate, form the soaking plate of structure as shown in Figure 8.Cold plate and evaporation plate all adopt silicon as material, by standard fusion bonding techniques, relative position are fixed after two plates cooperatively interact.It is lower that anode linkage has bonding temperature, better with other process compatibility, bond strength and stability high, bonding apparatus is simple.Anode linkage technology be under powerful electrostatic forcing, the surface that two are bonded is pressed together; At a certain temperature, by chemical valence bonding, silicon chip is firmly bonded together.
Cold plate and evaporation plate all adopt silicon as material, after making relative position fixing by fusion bonding techniques after two plates cooperatively interact, a Metal Packaging is done in soaking plate outside, whole soaking plate or part soaking plate are wrapped up or covered, there is a copper pipe encapsulation side, and copper pipe position coordinates with soaking plate side aperture place.Copper pipe external-open one aperture, stretches into probe and clamp-ons solidification glue as soaking plate encapsulation.Encapsulating material can utilize metal, such as copper.Shown in Figure 10 is the structural representation of semiconductor nanorods soaking plate encapsulating housing.At the outstanding pipe of encapsulation side, pipe position is relative with soaking plate side tapping, and its effect mainly contains two, carries out vacuum suction and inject actuating medium to soaking plate in cavity.Have a placement solidification sebific duct hole 8 on the surface of this pipe, clamp-oning shown in Figure 11 is installed in this hole and solidifies sebific duct 9.Have one at the end face of this pipe and vacuumize hole and working medium fills hole 7.Utilize vacuum pump to vacuumize soaking plate, vacuum should ensure that environment cleaning is dustless.After vacuum completes, by distilled water, (concrete working medium is as the criterion with institute's service condition, product utilization water of the present invention is as working medium) carry out degasification, process embodiment, for distilled water is carried out heating evaporation, utilizes steam to take away to be dissolved in the inconduc in distilled water.After this, the negative pressure formed in cavity when vacuumizing soaking plate before utilization carries out filling topping up to soaking plate.Because soaking plate exists optimum charge of working fluid, the optimum charge of working fluid utilizing prior art to draw this kind of soaking plate of the present invention.Have an aperture at pipe top, it act as and gos deep into probe, and solidification glue is clamp-oned in acting as of probe, and the effect of solidification glue is mainly to be carried out vacuum suction and inject in cavity after actuating medium completes utilizing solidification glue that soaking plate side openings place is sealed to soaking plate.After completing sealing, probe is cut off and opens encapsulation.Ensure that soaking plate internal cavity and outside air cut off, and afterwards in the middle of use procedure in cavity high temperature and high pressure steam must not leak.As shown in figure 11 be structural representation after semiconductor material nanometer rods soaking plate encapsulates.Finally complete and open encapsulation, its soaking plate formed as shown in Figure 9.Shown in Figure 12 has been the cross-sectional view of semiconductor nanorods soaking plate after encapsulation.Encapsulating structure housing in schematic diagram adopts cross-sectional view.Shown in Figure 13 is that semiconductor nanorods soaking plate carries out encapsulating rear structural profile decomposing schematic representation.Demonstrate in Figure 12, Figure 13 bonding complete after semiconductor nanorods 10 and semiconductor nanorods soaking plate encapsulation 11.Shown in Figure 14 is nanometer rods soaking plate and heat radiator, combination of fans scheme of installation.Adopt one be arranged on the fan 12 at top and be arranged on the radiator fins 13 at middle part and the nanometer rods soaking plate 14 of the present invention being arranged on bottom in figure, carry out combination and install.
The present invention is applicable to computer chip radiation, comprise CPU (central processing unit) (CPU) and Graphics Processing Unit (GPU), the present invention simultaneously also goes for light emitting diode lighting equipment (LED), the cooling of the high energy electron chip of wireless telecommunications or wire communication industry or photoelectric chip or radio frequency chip, the present invention simultaneously can be adapted to military radar, laser equipment, the cooling of medicine equipment or the inner high energy heat generating components of aerospace equipment.
Any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be the content not departing from technical solution of the present invention, the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (10)
1. a soaking plate, is characterized in that: described soaking plate comprises upper and lower two parts, and upper part is condensation portion, and lower part is evaporation section, and the cold plate in condensation portion and the evaporation plate in evaporation section are combined as a whole; The cryosurface of cold plate is relative with the evaporation surface of evaporation plate and put, and described cold plate center is fluted, and inside grooves is fixed with some outstanding cylinders, and groove is positioned at the cryosurface of cold plate; Evaporation plate is a flat board, evaporation plate face is fixed with some metal material nanometer rods, this nanometer rods is utilized and plunders angle deposition technique or generated by galvanic corrosion technology or microelectroforming technology technology, cold plate, evaporation plate are in the same size, make relative position fix after cooperatively interacting, fit tightly; Actuating medium is filled with in the cavity formed after cold plate and evaporation plate combine.
2. soaking plate according to claim 1, is characterized in that: the inside cavity formed after cold plate and evaporation plate combine has capillary structure, and the capillary structure of described soaking plate inside cavity is nanometer rods.
3. soaking plate according to claim 2, it is characterized in that: the capillary structure of described soaking plate inside cavity is nanometer rods, plunder angle deposition technique or galvanic corrosion technology or microelectroforming technology technology in the single side surface utilization of evaporation plate and generate nanometer rods, its nanometer rods layer produces capillary force after being formed under the condition being filled with working fluid, drives hydraulic fluid to produce backflow.
4. soaking plate according to claim 1, it is characterized in that: generate paxilla in cold plate inside, unlike material according to cold plate adopts different formation methods, when cold plate adopts silicon to be material, then utilizes dry etch technique in MEMS (micro electro mechanical system) body micro-processing technology to generate cylinder; When cold plate adopts copper or aluminium to be material, then mechanical processing tools is adopted to generate cylinder.
5. soaking plate according to claim 1, is characterized in that: described cold plate and evaporation plate adopt silicon or copper, aluminium material; Described nanometer rods adopts copper material.
6. soaking plate according to claim 5, is characterized in that: when described cold plate and evaporation plate all adopt copper as material, by standard molecule Diffusion Welding technology or ordinary soldering techniques, relative position is fixed after two plates cooperatively interact; When described cold plate and evaporation plate all adopt silicon as material, after two plates cooperatively interact, by standard fusion bonding techniques, relative position is fixed.
7. soaking plate according to claim 1, is characterized in that: in soaking plate, open a topping up hole, and the size in this topping up hole and position should be able to ensure the intensity of soaking plate and the requirement of heat radiation.
8. soaking plate according to claim 7, is characterized in that: described topping up hole is rectangle or circle, and open at cold plate wherein.
9. soaking plate according to claim 6, it is characterized in that: cold plate and evaporation plate all adopt copper as material, after making relative position fixing by molecular diffusion solder technology or solder technology after two plates cooperatively interact, in the welding one of cold plate side aperture place for the copper pipe vacuumized and working medium fills.
10. soaking plate according to claim 6, it is characterized in that: cold plate and evaporation plate all adopt silicon as material, after making relative position fixing by fusion bonding techniques after two plates cooperatively interact, a Metal Packaging is done in soaking plate outside, whole soaking plate or part soaking plate are wrapped up or covered, there is a copper pipe encapsulation side, and copper pipe position coordinates with soaking plate side aperture place; Copper pipe external-open one aperture, stretches into probe and clamp-ons solidification glue as soaking plate encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010256409.1A CN102378547B (en) | 2010-08-18 | 2010-08-18 | Vapor chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010256409.1A CN102378547B (en) | 2010-08-18 | 2010-08-18 | Vapor chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102378547A CN102378547A (en) | 2012-03-14 |
| CN102378547B true CN102378547B (en) | 2015-07-15 |
Family
ID=45796222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010256409.1A Expired - Fee Related CN102378547B (en) | 2010-08-18 | 2010-08-18 | Vapor chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102378547B (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI507653B (en) * | 2013-08-23 | 2015-11-11 | Asia Vital Components Co Ltd | Heat dissipation unit |
| KR20150091905A (en) * | 2014-02-04 | 2015-08-12 | 엘지전자 주식회사 | Vapor chamber |
| CN104540373A (en) * | 2014-12-23 | 2015-04-22 | 江苏大学 | Low-melting-point alloy-silicon-based miniature cooler used for smartphone heat dissipation |
| CN105865243A (en) * | 2016-05-14 | 2016-08-17 | 广东工业大学 | Novel flat plate thiele tube and preparation method thereof |
| CN107796070A (en) * | 2016-08-31 | 2018-03-13 | 杨坤 | A kind of method and device of evaporation water |
| CN107906989A (en) * | 2017-02-10 | 2018-04-13 | 北京丰联奥睿科技有限公司 | A kind of superconduction hot plate and its manufacturing process |
| WO2019056506A1 (en) * | 2017-09-19 | 2019-03-28 | 华为技术有限公司 | Thin type heat uniformizing plate formed by stamping process |
| TWI697651B (en) * | 2017-12-13 | 2020-07-01 | 奇鋐科技股份有限公司 | Heat dissipation device manufacturing method |
| CN108758581A (en) * | 2018-08-09 | 2018-11-06 | 广东工业大学 | A kind of soaking plate applied to LED light group heat dissipation |
| CN109855438A (en) * | 2019-03-27 | 2019-06-07 | 常州大学 | High-performance flexible cryosurface and preparation method thereof based on carbon nanomaterial film |
| CN110906773B (en) * | 2019-12-24 | 2023-12-26 | 中国科学院近代物理研究所 | Spallation target and heat exchange method thereof |
| TWI749763B (en) * | 2020-09-11 | 2021-12-11 | 建準電機工業股份有限公司 | Vapor chamber and electronic device including the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101001515A (en) * | 2006-01-10 | 2007-07-18 | 鸿富锦精密工业（深圳）有限公司 | Plate radiating pipe and manufacturing method thereof |
| CN101232794A (en) * | 2007-01-24 | 2008-07-30 | 富准精密工业(深圳)有限公司 | Soaking plate and heat radiating device |
-
2010
- 2010-08-18 CN CN201010256409.1A patent/CN102378547B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101001515A (en) * | 2006-01-10 | 2007-07-18 | 鸿富锦精密工业（深圳）有限公司 | Plate radiating pipe and manufacturing method thereof |
| CN101232794A (en) * | 2007-01-24 | 2008-07-30 | 富准精密工业(深圳)有限公司 | Soaking plate and heat radiating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102378547A (en) | 2012-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102378547B (en) | Vapor chamber | |
| Liang et al. | Review of pool boiling enhancement by surface modification | |
| CN102070120B (en) | Preparation method for high-density interposer for microelectronic system-in-package | |
| US8405996B2 (en) | Article including thermal interface element and method of preparation | |
| CN1707783A (en) | Thermal tube and producing method thereof | |
| CN105679683B (en) | A kind of copper and tin copper bonding technology and structure based on copper nanometer rods | |
| US20040195934A1 (en) | Solid state thermal engine | |
| CN107623067B (en) | A kind of miniature vertical structure thermo-electric device and preparation method thereof of portable high aspect ratio interlayer connection | |
| CN112071817A (en) | Immersion cooling heat dissipation structure, radiator, heat dissipation system and manufacturing method thereof | |
| CN103839905B (en) | There is silicon substrate microchannel heat exchanger and the manufacture method thereof of electrohydrodynamic Micropump | |
| CN101853822B (en) | Novel heat sink and production method thereof | |
| CN104124217B (en) | A kind of high-temperature carborundum power device packaging structure and preparation method thereof | |
| CN111725144A (en) | High-temperature electronic packaging substrate material device based on gas-liquid phase change and preparation method thereof | |
| CN109560054A (en) | A kind of metallic micro channel heat sink structure and its manufacturing method applied to chip cooling | |
| CN113675159A (en) | Inner-packaging self-adaptive uniform-temperature thermal interface based on liquid metal infiltration and preparation method and application thereof | |
| WO2021136222A1 (en) | Silicon wafer back metallization structure and manufacturing process therefor | |
| CN212587492U (en) | Immersion cooling radiator and immersion cooling radiating system | |
| Chen et al. | Enhanced boiling heat transfer performance on mini-pin-finned copper surfaces in FC-72 | |
| CN108962525A (en) | A kind of preparation method of Sintered NdFeB magnet surface layer magnetic gradient nanostructure | |
| CN107570688A (en) | The method for preparing the anti-corrosion liquid cold plate of microwave power frequency shift | |
| CN110944493B (en) | Metal-based composite material device based on gas-liquid phase change and preparation method thereof | |
| CN103193507B (en) | Method for improving wettability of metal to SiC ceramic | |
| CN113257650A (en) | X-ray tube and preparation method thereof | |
| CN105420679A (en) | Device and method for preparing copper-clad ceramic substrate based on twin-target magnetron sputtering | |
| CN112420638A (en) | Diamond film copper-clad heat sink and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150715 Termination date: 20160818 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |