CN104124217B - A kind of high-temperature carborundum power device packaging structure and preparation method thereof - Google Patents
A kind of high-temperature carborundum power device packaging structure and preparation method thereof Download PDFInfo
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- CN104124217B CN104124217B CN201410339911.7A CN201410339911A CN104124217B CN 104124217 B CN104124217 B CN 104124217B CN 201410339911 A CN201410339911 A CN 201410339911A CN 104124217 B CN104124217 B CN 104124217B
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Abstract
The embodiments of the invention provide a kind of high-temperature carborundum power device packaging structure and preparation method, it is related to semiconductor packages field, can effectively strengthens device lifetime, improve device stability, while reduce cost, simplifies technique.The encapsulating structure includes：Metal positive pole (1), silicon carbide power device (2) between metal negative electrode (3) and the metal positive pole (1) and the metal negative electrode (3), tack coat upper strata heat-conducting metal layer (4), tack coat lower floor heat-conducting metal layer (7), package substrate (8), bond the metal negative electrode (3) and the tack coat (5) of the package substrate (8), the multiple heat conduction windows (6) formed in the tack coat (5), multiple heat conduction windows (6) are scattered in array structure in the tack coat (5)；Radiator (10) and the adhesive layer (9) between package substrate (8).Package casing, and external pin.
Description
Technical field
The present invention relates to semiconductor packages field, more particularly to a kind of high-temperature carborundum power device packaging structure and
Its preparation method.
Background technology
Device power and device power density can increase along with electronic device performance boost so that electronic device is in property
The serious challenge in terms of radiating is faced with while being lifted.For carborundum (SiC) high-temperature device and integrated circuit, its
Operating temperature is high, and the temperature range of steady operation is big, under the high temperature conditions with suitable superiority, therefore, studies its temperature
It is significant to spend reliability.
The junction temperature for the silicon carbide device that commercialization company provides is usually no more than 175 DEG C, raising work temperature more further
Degree needs to greatly develop its High-temperature Packaging structure and material.There is document it has been proved that the power device energy based on carbofrax material
For normal work higher than 500 DEG C, still, there is very big temperature limiting today for the encapsulation technology that silicon device designs, and is much applying
In occasion, such as under the extreme environmental conditions such as Aero-Space, more there is tight demand to this technology.Develop this high-performance envelope
Dress, it is necessary to start with from encapsulating structure and its material and studied, to meet the needs of silicon carbide device works at high temperature.It is discrete
The selection that power device has very wide commercial optional encapsulation encapsulation in industrial quarters depends on several factors, including bare chip device
Size, maximum power consumption and circuit application.One traditional discrete power device packaging technique usually uses lead or unleaded
Welding alloy is fitted in an end face of device on heat sink substrate, and end face in addition is bonded together with aluminum steel or gold thread.Cause
It is simple for technique, the low advantage of cost.This encapsulation technology is still occupied an leading position in current power electronics package.
The hot property of device encapsulation depends on the geometric format and bulk thermal conductivities of device and encapsulating material, and select to use glues
Tie the thermal conductivity of layer material far below device in itself and heat-radiating substrate, this often weakens carborundum compared to conventional semiconductors device
Advantage of the part in terms of good thermal properties, the application for high-temperature field, it, which influences often to turn into, expands chip package thermal resistance, leads
An important factor for causing device thermal degradation or even cause thermal damage.
The content of the invention
Embodiments of the invention provide a kind of high-temperature carborundum power device packaging structure and preparation method thereof, can be effective
Ground strengthens device lifetime, improves device stability, while reduces cost, simplifies technique.
To reach above-mentioned purpose, embodiments of the invention adopt the following technical scheme that：
A kind of high-temperature carborundum power device packaging structure, including：
Metal positive pole (1), metal negative electrode (3) and the metal positive pole (1) and the metal negative electrode (3) it
Between silicon carbide power device (2), tack coat upper strata heat-conducting metal layer (4), tack coat lower floor heat-conducting metal layer (7), encapsulate base
Plate (8), the metal negative electrode (3) and the tack coat (5) of the package substrate (8) are bonded, formed in the tack coat (5)
Multiple heat conduction windows (6), multiple heat conduction windows (6) are scattered in array structure in the tack coat (5)；Radiator
(10) adhesive layer (9) and between package substrate (8)；Package casing, and external pin.
Optionally, metal positive pole (1) material is Al/Ti, metal negative electrode (3) material is Ni, tack coat (5) is
Tin-lead silver solder, heat conduction window (6) material are high thermal conductivity graphite.
Optionally, tack coat upper strata heat-conducting metal layer (4), tack coat lower floor heat-conducting metal layer (7) be Ni metal or
Metal Au materials.
Optionally, the heat conduction window (2) being provided with the tack coat (5) be shaped as cylinder or, the tack coat
(5) the heat conduction window (2) being provided with is shaped as cuboid, or, the heat conduction window (2) being provided with the tack coat (5)
It is shaped as tri-prismoid.
Optionally, multiple heat conduction windows (2) are scattered in symmetric array in the tack coat (5)：5-6-5、5-5-
5th, 3-5-5-3 or asymmetric arrays 2-4-6-3.
Optionally, the thickness of the heat conduction window (2) is less than or equal to the thickness of tack coat (5).
A kind of preparation method of above-mentioned high-temperature carborundum power device packaging structure, it is characterised in that methods described bag
Include following steps：
1) distinguish metallization metals electrode in the positive and negative of silicon carbide power device (2), form metal positive pole (1) and gold
Belong to negative electrode (3)；
2) tack coat is formed on the metal negative electrode (3) and package substrate (8) of the silicon carbide power device (2) respectively
Upper strata heat-conducting metal layer (4) and tack coat lower floor heat-conducting metal layer (7), metallic film manufacture method is used when making metal level,
The metallic film manufacture method is vacuum vapour deposition, magnetron sputtering method, ion plating method, DC sputtering deposition method, ion beam splash
Penetrate coating method, radio-frequency sputtering coating method, plasma reinforced chemical vapour deposition method, pulse laser deposition, pulsed plasma
One or several kinds of modes in method, pulse laser method, electron-beam vapor deposition method, galvanoplastic；
3) graphite film is manufactured on the described tack coat upper strata heat-conducting metal layer (4) that step 2) is formed, use is hydrogeneous
Plasma carries out the heat conduction window (6) that anisotropic etching goes out shape described in claim 6 to graphite, according to hydrogeneous plasma
Body is realized to the different characteristic of etching speed of graphite all directions；
4) device formed in the step 3) is mounted on tack coat lower floor heat-conducting metal by the tack coat (5) of formation
On layer (7), mounting method mainly has 4 kinds：Eutectic mounting method, welding mounting method, conducting resinl mounting method, glass cement mounting method；
5) adhesive bonding radiator (10) is used, is formed between the radiator (10) and the package substrate (8)
Adhesive layer (9).
High-temperature carborundum power device packaging structure that above-mentioned technical proposal provides and preparation method thereof, sets in tack coat
The heat conduction window array structure that the graphite material with high heat conductance is formed is put, is led by silicon carbide power device and substrate arrangement
The mode of thermal window array sets passage in the relatively low tack coat of thermal conductivity, effectively produces silicon carbide power device
Heat from workspace export, heat-radiating substrate combine highly thermally conductive performance material fin-shaped fin heat is dissipated rapidly
Send out so as to reduce the temperature of device workspace.
The encapsulating structure provided in the present invention both ensure that effectively contacting between device chip and substrate, solve carbon again
SiClx device effectively strengthened device lifetime, improves device stability because of tack coat thermal conductivity low the problem of causing device failure,
Cost is reduced simultaneously, simplifies technique.Also, the bonding Rotating fields provided in the present invention, can be generalized to other high-temperature devices
In, to obtain more excellent device performance.
In addition, also newly with the addition of the heat-conducting metal layer of two layers of flood in the present invention, add after double layer of metal heat-conducting layer, device
The metal negative electrode of part no longer directly contacts with package substrate, and tack coat directly bonds heat-conducting metal layer up and down, and newly plus heat conduction is golden
The purpose of category layer is the hot-fluid that discrete devices center density is more concentrated, and is improved the work of each heat conduction window efficiency of transmission
With.
Brief description of the drawings
Fig. 1 is a kind of front view of high-temperature carborundum power device packaging structure provided in an embodiment of the present invention；
Fig. 2 is that the array of cuboid heat conduction window in a kind of encapsulating structure provided in an embodiment of the present invention overlooks distribution map；
Fig. 3 is that the array of cylinder heat conduction window in a kind of encapsulating structure provided in an embodiment of the present invention overlooks distribution map；
Fig. 4 is that the array of tri-prismoid heat conduction window in a kind of encapsulating structure provided in an embodiment of the present invention overlooks distribution
Figure.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
The embodiments of the invention provide a kind of high-temperature carborundum power device packaging structure, as shown in figure 1, including：Metal
Carborundum work(between positive electrode (1), metal negative electrode (3) and the metal positive pole (1) and the metal negative electrode (3)
Rate device (2), tack coat upper strata heat-conducting metal layer (4), tack coat lower floor heat-conducting metal layer (7), package substrate (8), bond institute
The tack coat (5) of metal negative electrode (3) and the package substrate (8) is stated, the multiple heat conduction windows formed in the tack coat (5)
Mouth (6), multiple heat conduction windows (6) are scattered in array structure in the tack coat (5)；Radiator (10) and with encapsulation
Adhesive layer (9) between substrate (8).Package casing (not shown), and external pin (not shown).
Articulamentum of the metal positive pole (1) of heretofore described silicon carbide power device as the forward voltage of device,
It requires there is preferable electric conductivity.The metal material (such as gold, copper, silver, platinum) of high work function, the present invention can generally be used
Realized in structure using aluminium/titanium layer, to ensure having preferable Ohmic contact.The metal negative electrode (3) of silicon carbide power device is made
For the articulamentum of device negative voltage, it requires preferable electric conductivity, is typically effectively led using metallic nickel to realize
Electrical connection.
Heat conduction window (6) material is graphite in the present invention.The thermal conductivity factor of the graphite is approximately 4 times of copper, is tin-lead silver
Nearly 20 times of solder, in graphite crystal, the carbon atom with layer forms covalent bond with sp2 hydridization, and each carbon atom is with three
Covalent bond is connected with the other three atom.Six carbon atom forms the ring of positive six shapes repeatedly in approximately the same plane, is extended into
Lamellar structure, the bond distance of C-C keys is all 142pm here, and this just belongs to bond distance's scope of atomic crystal, therefore for same layer
For, it is atomic crystal.In also each surplus next p tracks of conplane carbon atom, they are overlapped.Electronics compares certainly
By equivalent to the free electron in metal, so the heat conduction of graphite energy and conduction, this is exactly metallic crystal feature.Therefore also sort out
In metallic crystal.It is separated by 340pm in graphite crystal between layers, it is in larger distance, combined with Van der Waals force, i.e. layer
Belong to molecular crystal between layer.It is but very strong due to being combined between the carbon atom on same plane layer, it is extremely difficult to destroy, so stone
The fusing point of ink is also very high, and chemical property is also stablized.In view of its special bonding mode, it is impossible to it is single be considered monocrystal or
Person is polycrystal, by the form of presentation in modern times, it is believed that graphite is a kind of mixed crystal.Graphite has due to its special construction
Following special nature：1) heat-resisting quantity：The fusing point of graphite is 3850 ± 50 DEG C, and boiling point is 4250 DEG C, even if through superhigh temperature electric arc
Calcination, the loss very little of weight, thermal coefficient of expansion also very little.Graphite intensity is improved and strengthened with temperature, at 2000 DEG C, graphite
Intensity doubles.2) conductive, thermal conductivity：The electric conductivity of graphite is higher than general nonmetallic ore 100 times.Thermal conductivity exceed steel,
The metal materials such as iron, lead.Graphite can conduction be because each carbon atom only forms 3 covalently with other carbon atoms in graphite
Key, each carbon atom still retain 1 free electron to transmit electric charge.3) chemical stability：Graphite has good at normal temperatures
Chemical stability, can acidproof, alkaline-resisting and organic solvent-resistant corrosion.
Heretofore described, the shape of the interior heat conduction window (6) of tack coat (5) has tri- kinds of different shapes of Fig. 2, Fig. 3 and Fig. 4
Shape, in the top view shown in Fig. 2, the heat conduction window (6) that is provided with the tack coat (5) is shaped as cylinder.Shown in Fig. 3
In top view, the heat conduction window (6) that is provided with the tack coat (5) is shaped as cuboid.In top view shown in Fig. 4, institute
That states the heat conduction window (6) that is provided with tack coat (5) is shaped as tri-prismoid.
Three kinds of windows shown in Fig. 2-Fig. 4 effectively can conduct heat dissipation caused by workspace to radiator (10)
Radiated.
As shown in figs 2-4, multiple heat conduction windows (6) are scattered in symmetric array in the tack coat (5)：5-6-
5, i.e., as shown in figs 2-4,3 row heat conduction windows are provided with altogether, each column all sets 5 heat conduction windows (6) in preceding next two columns, middle
One row are provided with 6 heat conduction windows (6).
Certainly, the array distribution mode of the heat conduction window can carry out other designs as needed, for example, being designed as 5-
5-5,3-5-5-3 or asymmetric 2-4-6-3 etc., is not limited herein.
When silicon carbide power device (2) works, heat transmits from silicon carbide power device (2), and heat passes through heat conduction window
Mouth (6) is ultimately conducted on radiator (10), is ensured during the radiating fin transmission of heat conduction window (6) to radiator (10)
Heat transmission is more fully carried out.
In structure provided by the invention, the thickness of the heat conduction window (6) is less than or equal to the thickness of tack coat (5),
To ensure Cohesion reliability.
It should be noted that the encapsulating structure of above-mentioned offer, it can be used not only for integrally sealing with silicon carbide device module
Dress, can be also used for other semiconductor power device integral packagings, so as to reach the lifting of high radiating effect.
The embodiment of the present invention additionally provides a kind of preparation method of above-mentioned encapsulating structure, described with reference to the structure shown in figure 1
Method comprises the following steps：
1) distinguish metallization metals electrode in the positive and negative of silicon carbide power device (2), form metal positive pole (1) and gold
Belong to negative electrode (3).
2) tack coat is formed on the metal negative electrode (3) and package substrate (8) of the silicon carbide power device (2) respectively
Upper strata heat-conducting metal layer (4) and tack coat lower floor heat-conducting metal layer (7), metallic film manufacture method is used when making metal level,
The metallic film manufacture method is vacuum vapour deposition, magnetron sputtering method, ion plating method, DC sputtering deposition method, ion beam splash
Penetrate coating method, radio-frequency sputtering coating method, plasma reinforced chemical vapour deposition method, pulse laser deposition, pulsed plasma
One or several kinds of modes in method, pulse laser method, electron-beam vapor deposition method, galvanoplastic.
3) graphite film is manufactured on the described tack coat upper strata heat-conducting metal layer (4) that step 2) is formed, use is hydrogeneous
Plasma carries out the heat conduction window (6) that anisotropic etching goes out shape described in claim 6 to graphite, according to hydrogeneous plasma
Body is realized to the different characteristic of etching speed of graphite all directions.
It is described that anisotropic etching is carried out to the surface of graphite or graphene using containing hydrogen plasma in the present invention, be
It make use of and react progress under given conditions containing hydrogen plasma and graphite, the specified conditions are：Reaction temperature：230~500
DEG C, air pressure：0.3~0.4Torr, hydrogen plasma power：80~100W, etching speed：5nm/ minutes.
4) device formed in the step 3) is mounted on tack coat lower floor heat-conducting metal by the tack coat (5) of formation
On layer (7), mounting method mainly has 4 kinds：Eutectic mounting method, welding mounting method, conducting resinl mounting method, glass cement mounting method.
5) adhesive bonding radiator (10) is used, is formed between the radiator (10) and the package substrate (8)
Adhesive layer (9).
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention described should be defined by scope of the claims.
Claims (8)
- A kind of 1. high-temperature carborundum power device packaging structure, it is characterised in that including：Between metal positive pole (1), metal negative electrode (3) and the metal positive pole (1) and the metal negative electrode (3) Silicon carbide power device (2), tack coat upper strata heat-conducting metal layer (4), tack coat lower floor heat-conducting metal layer (7), package substrate (8) metal negative electrode (3) and the tack coat (5) of the package substrate (8), are bonded, is formed in the tack coat (5) Multiple heat conduction windows (6), multiple heat conduction windows (6) are scattered in array structure in the tack coat (5)；Radiator (10) And the adhesive layer (9) between package substrate (8)；Package casing, and external pin；Metal positive pole (1) material is Al/Ti, metal negative electrode (3) material is Ni, tack coat (5) be tin-lead silver solder, Heat conduction window (6) material is high thermal conductivity graphite.
- 2. structure according to claim 1, it is characterised in that tack coat upper strata heat-conducting metal layer (4), under tack coat Layer heat-conducting metal layer (7) is Ni metal or metal Au materials.
- 3. structure according to claim 1, it is characterised in that the adhesive layer (9) is heat conductive silica gel material.
- 4. structure according to claim 1, it is characterised in that the package substrate (8) is copper product, aluminium oxide ceramics material One kind in material, silicon nitride ceramic material, diamond or glass ceramic material.
- 5. structure according to claim 1, it is characterised in that the shape for the heat conduction window (6) being provided with the tack coat (5) Shape is cylinder, cuboid or tri-prismoid.
- 6. according to the structure described in claim any one of 1-4, it is characterised in that multiple heat conduction windows (6) are described viscous Symmetric array is scattered in knot layer (5)：5-6-5,5-5-5,3-5-5-3 or asymmetric array 2-4-6-3.
- 7. according to the structure described in claim any one of 1-5, it is characterised in that the thickness of the heat conduction window (6) be less than or Equal to the thickness of tack coat (5).
- 8. a kind of preparation method of the high-temperature carborundum power device packaging structure described in any one of claim 1-7, its feature It is, the described method comprises the following steps：1) distinguish metallization metals electrode in the positive and negative of silicon carbide power device (2), form metal positive pole (1) and metal is born Electrode (3)；2) tack coat upper strata is formed on the metal negative electrode (3) and package substrate (8) of the silicon carbide power device (2) respectively Heat-conducting metal layer (4) and tack coat lower floor heat-conducting metal layer (7), metallic film manufacture method is used when making metal level, it is described Metallic film manufacture method is vacuum vapour deposition, magnetron sputtering method, ion plating method, DC sputtering deposition method, ion beam sputtering plating Embrane method, radio-frequency sputtering coating method, plasma reinforced chemical vapour deposition method, pulse laser deposition, pulsed plasma method, One or several kinds of modes in pulse laser method, electron-beam vapor deposition method, galvanoplastic；3) step 2) formed described tack coat upper strata heat-conducting metal layer (4) on manufacture graphite film, using hydrogeneous grade from Daughter carries out the heat conduction window (6) that anisotropic etching goes out shape described in claim 5 to graphite, according to containing hydrogen plasma pair The different characteristic of etching speed of graphite all directions is realized；4) device formed in the step 3) is mounted on tack coat lower floor heat-conducting metal layer by the tack coat (5) of formation (7) on, mounting method mainly has 4 kinds：Eutectic mounting method, welding mounting method, conducting resinl mounting method, glass cement mounting method；5) adhesive bonding radiator (10) is used, bonding is formed between the radiator (10) and the package substrate (8) Layer (9).
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| CN104879725B (en) * | 2015-05-18 | 2018-07-27 | 东莞市闻誉实业有限公司 | Radiator |
| CN106552929B (en) * | 2015-09-30 | 2018-12-21 | 比亚迪股份有限公司 | The preparation method and device of a kind of aluminium silicon carbide plate with aluminium column and its product obtained |
| CN105789427A (en) * | 2016-03-15 | 2016-07-20 | 深圳前海华兆新能源有限公司 | Thermoelectric power generation device and preparation method thereof |
| CN108134000B (en) * | 2016-12-01 | 2020-12-08 | 深圳光峰科技股份有限公司 | Light-emitting device, packaging method and projection system |
| CN107613652A (en) * | 2017-09-20 | 2018-01-19 | 四川海英电子科技有限公司 | The manufacture method of high-density interconnected printed circuit board |
| CN108682659B (en) * | 2018-05-16 | 2019-09-13 | 江苏芯澄半导体有限公司 | A kind of wide bandgap semiconductor silicon carbide power device encapsulating structure for new-energy automobile |
| CN108615712A (en) * | 2018-05-17 | 2018-10-02 | 江苏芯澄半导体有限公司 | A kind of wide bandgap semiconductor silicon carbide power device encapsulating structure and packaging method |
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