CN102358614A - Processing method of graphene nano-patterns - Google Patents
Processing method of graphene nano-patterns Download PDFInfo
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- CN102358614A CN102358614A CN2011103218067A CN201110321806A CN102358614A CN 102358614 A CN102358614 A CN 102358614A CN 2011103218067 A CN2011103218067 A CN 2011103218067A CN 201110321806 A CN201110321806 A CN 201110321806A CN 102358614 A CN102358614 A CN 102358614A
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Abstract
The invention relates to a processing method of graphene nano-patterns. The method comprises the following steps of: forming artificial defects on graphene; and carrying out anisotropic etching on the graphene by using hydrogen-containing plasma. According to the method disclosed by the invention, the nano-level graphene structure can be processed in a controllable way, the precision can reach below 10nm, and the graphene nanostructure with an atom-level smooth zigzag edge structure can be obtained.
Description
Technical field
The invention belongs to the micro-nano manufacture field, relate in particular to a kind of processing method of graphene nano pattern.
Background technology
The graphite flake with nano thickness that is made up of one of crystalline graphite or a few atomic layer is called Graphene.
2004, the Britain scientist went out single-layer graphene (Science 306,666 (2004)) in prepared in laboratory first.Electronics in the single-layer graphene belongs to the dirac fermion of no quality, so being found to be of this material utilizes condensed state investigation of materials quantrm electrodynamics and relativistic effect to open up a brand-brand-new way.Electron mobility in the Graphene is up to 200000cm
2V
-1s
-1, be a kind of ideal material of making high-speed electronic components.The electrical properties of graphene nano structure receives the influence of marginal texture and quantum confined effect simultaneously.The marginal texture of graphene nano structure is divided into the two kinds of (see figure 1)s in armchair (armchair) edge and zigzag (zigzag) edge.Wherein the surface state that has of zigzag edge tends to make it to conduct electricity more, and quantum confined effect is then tended to make Graphene band gap to occur and become non-conductive.In addition, the electronics with graphene nano structural edge place of zigzag marginal texture also the spin polarization phenomenon can occur, can be applicable to the spintronics field.
The report of the method for some processing graphite alkene nanostructureds is arranged in the prior art, mainly comprise: Graphene sonic oscillation method, CNT is peeled off method, and the carbon back molecular link is legal, electron beam exposure-oxygen plasma etching method.Wherein, though first three methods can process nano level graphene-structured, its structure plan all is uncontrollable.Last a kind of method is the good method of a kind of controllability, but its machining accuracy is difficult to reach below ten nanometers.In addition, above-mentioned these methods all can not obtain having the graphene nano structure of atomically flating zigzag marginal texture.
Summary of the invention
Therefore; The object of the present invention is to provide a kind of processing method of graphene nano pattern; Can controllably process nano level graphene-structured, precision can reach below ten nanometers, and can access the graphene nano structure of the zigzag marginal texture with atomically flating.
The inventor finds after deliberation; Through on Graphene, forming artificial defect and this Graphene being carried out anisotropic etching with containing hydrogen plasma; The hole that some regular hexagons on the Graphene of over etching, can occur; Rather than the common circular opening that obtains of plasma etching, thereby obtain required zigzag marginal texture.
According to above-mentioned discovery, the invention provides a kind of processing method of graphene nano pattern, comprising:
On Graphene, form artificial defect;
With containing hydrogen plasma this Graphene is carried out anisotropic etching.
According to the processing method of graphene nano pattern provided by the invention, wherein said artificial defect comprises the hole.
According to the processing method of graphene nano pattern provided by the invention, wherein said artificial defect can be arranged in the dot matrix pattern.
According to the processing method of graphene nano pattern provided by the invention, wherein said dot matrix pattern can be triangle dot matrix or rectangular lattice.
According to the processing method of graphene nano pattern provided by the invention, wherein artificial defect can form through photoetching, nano impression, mechanical shock, laser scanning.
According to the processing method of graphene nano pattern provided by the invention, wherein, artificial defect is increased gradually, till forming required pattern with containing the anisotropic etching of hydrogen plasma to Graphene.
According to the processing method of graphene nano pattern provided by the invention, the parameter of wherein said hydrogeneous plasma etching is: reaction temperature, room temperature to 520 ℃; Air pressure is less than 1Torr; Plasma power, 30-120W; Etching speed was less than 15nm/ minute.
According to the processing method of graphene nano pattern provided by the invention, also comprise and confirm the Graphene crystal lattice orientation, and design orientation and the angle between the Graphene crystal lattice orientation of the dot matrix pattern of said artificial defect.
According to the processing method of graphene nano pattern provided by the invention, confirm that wherein the method for Graphene crystal lattice orientation comprises:
On graphene film, etch an aperture;
Use hydrogeneous plasma etching, this aperture is extended to the hexagon macropore, confirm the crystal lattice orientation of Graphene according to the orientation at the edge of this hexagon macropore.
According to the processing method of graphene nano pattern provided by the invention, wherein contain hydrogen plasma and comprise the plasmas that hydrogen-containing gas generated such as hydrogen, methane, ethene, steam.
Method provided by the invention can obtain the various graphene-structured of nano-scale, comprises quantum dot, nano belt, superlattice structure, and these graphene nano structures all have the zigzag marginal texture of atomically flating.Method provided by the invention has excellent controllability, has benefited from containing the etching scavenging action of hydrogen plasma to some organic pollutions, and the graphene nano body structure surface that processes in this way is very clean.And this method and conventional semiconductor processing technology are compatible.
In addition, it is integrated that this method can be used for device, produces the graphene nano structure devices in batches.These processing with various graphene nano patterns of atomically flating zigzag marginal texture are not merely research Graphene size restrictions effect a kind of effectively controlled method are provided; For research zigzag marginality provides a kind of reliable approach to the influence of device rerum natura, comprise the quantum device of single electron quantum dot device, FET device, spin polarization, the ballistic transport device under the room temperature, quantum hall effect device etc. simultaneously.
Description of drawings
Followingly the embodiment of the invention is described further with reference to accompanying drawing, wherein:
Fig. 1 is the zigzag marginal texture of Graphene and the sketch map of armchair marginal texture;
Fig. 2 is the step sketch map of the processing method that provides according to embodiment 1;
Fig. 3 is a Graphene lattice structure sketch map;
Fig. 4 is a square lattice pattern sketch map;
Fig. 5 is the atomic force microscopy image of a kind of graphene nanobelt of obtaining according to the method for embodiment 1;
Fig. 6 triangulation point system of battle formations case sketch map;
Fig. 7 is the atomic force microscopy image of a kind of Graphene superlattices of obtaining according to the method for embodiment 2;
Fig. 8 is the atomic force microscopy image of a kind of graphene quantum dot of obtaining according to the method for embodiment 2;
Fig. 9 is the atomic force microscopy image of a kind of Graphene superlattices of obtaining according to the method for embodiment 3.
The specific embodiment
Processing method provided by the invention mainly comprises two key steps:
(1) design of artificial defect and processing;
(2) hydrogeneous plasma anisotropic etching.
Containing hydrogen plasma has anisotropic etching effect to Graphene in face, the hole of some regular hexagons promptly on the Graphene of over etching, can occur, rather than the common circular opening that obtains of plasma etching.The orientation of these the hexagonal holes on a slice single crystal graphite alkene all is consistent.Because the zigzag edge is the most stable in all marginal textures of Graphene, so the remaining later on marginal texture of hydrogeneous plasma etching all is the zigzag type, and the roughness at edge is on the atom level level.
Contain hydrogen plasma comes from the carbon atom generation chemical reaction generation gaseous state in hydrogen plasma and the Graphene to the etching effect of Graphene hydrocarbon.This course of reaction relatively relaxes, and its intensity can be come accurately control through etching condition.Because it is variant to be in the chemical stability of the carbon atom on graphene film inside and the edge, therefore can make etching only occur in the defective and the edge of Graphene through the control etching condition.According to hydrogeneous isoionic these etching characteristics, but the manufacture of intraocular defective is controlled the zone that etching takes place, and obtains required sample structure.
The sample topography of processing as required; At first designing and preparing goes out to possess the artificial defect of certain distributed characteristics; Carry out etching and make these artificial defects grow up and become hexagon with containing hydrogen plasma then; Etch away those unwanted places in the graphene film gradually, finally obtain required graphene nano structure plan.Because the orientation of the hexagonal hole on same Graphene all is consistent, the graphene nano structure plan that therefore obtains at last depends primarily on structure and the orientation of artificial defect array and the angle between the Graphene crystal orientation of artificial defect array.
Artificial defect traditional micro-nano process technology for example capable of using forms, and for example the electron beam exposure through standard combines the method for oxygen plasma etching on Graphene, to prepare diameter and is about tens nano apertures, as artificial defect.These traditional micro-nano process technologies can accurately be controlled shape, position and the distribution of these artificial defects.
Can regulate through the control etching condition and contain the etch rate of hydrogen plasma Graphene.Etch rate makes that on nanoscale, accurately controlling sample size becomes possibility comparatively slowly.The preferred reaction conditions that contains hydrogen plasma and Graphene is a reaction temperature: room temperature to 520 ℃, and air pressure: less than 1Torr, plasma power: 30-120W, etching speed: less than 15nm/ minute.
Several kinds of various embodiment are provided below, and in these embodiment, these embodiment are merely exemplary, and the improvement of the following example being made according to the present invention will become apparent to those skilled in the art that so fall into equally scope of the present invention.
Embodiment 1
Shown in Fig. 2 a to Fig. 2 d, present embodiment provides a kind of processing method of graphene nano pattern, comprising:
1) shown in Fig. 2 a, transfers to graphene film 2 at the bottom of the silicon wafer-based with 300nm oxide layer (300nm SiO on 1 through the mechanical stripping method
2/ Si),, therefore can confirm the crystal orientation of Graphene through the edge of Graphene because mostly the edge of the graphene film that the mechanical stripping method obtains is the zigzag limit, the lattice structure of Graphene is as shown in Figure 3, wherein available a
1And a
2The crystal orientation of representing Graphene;
2) spin coating one deck PMMA photoresist 3 on sample; On photoresist, form a plurality of circular holes with electron beam exposure and developing technique, Circularhole diameter is 50nm, shown in Fig. 2 b; These a plurality of circular holes are arranged in square lattice pattern as shown in Figure 4, and make the orientation c of this square lattice
1Be parallel to Graphene crystal orientation a
1
3) carry out etching with oxygen plasma,, with acetone photoresist is cleaned up then the square lattice design transfer on the photoresist (shown in Fig. 2 c) to Graphene;
4) carry out etching with hydrogen plasma, etching temperature is 450 ℃, and air pressure 0.3Torr, hydrogen plasma power are 50W, and etching speed is 5nm/min, and a plurality of circular holes are enlarged gradually, forms a plurality of hex holes shown in Fig. 2 d.
Because the zigzag edge is the most stable in all marginal textures of Graphene, so the remaining later on marginal texture of hydrogen plasma etching all is the zigzag type.
According to present embodiment; Can on the basis of step 4), carry out step 5) continues to carry out etching with hydrogen plasma; Further enlarge hex hole; Thereby form pattern as shown in Figure 5, accurately control etch period, between adjacent two hex holes, form the graphene nanobelt of nanoscale width.
According to present embodiment; Can on the basis of step 5), carry out step 6) and further carry out etching with hydrogen plasma; Etch away the graphene nanobelt between adjacent two hex holes, form isolated graphene quantum dot array, wherein each quantum dot is a parallelogram.
According to present embodiment, except that hydrogen plasma, can also adopt other hydrogen-containing gas such as methane, ethene, steam to carry out etching to form the Graphene pattern.
Because containing hydrogen plasma has anisotropic etching effect to Graphene in face; Therefore will be extended to the hole of regular hexagon through the artificial defect of over etching; And the orientation of regular hexagon hole and the crystal lattice orientation of Graphene are fixing angle; With dashed lines 1, dotted line 2 and arrow are expressed the propagation direction of hexagon hole among Fig. 3; The orientation of all hexagonal holes all is consistent in same Graphene; Therefore the graphene nano structure plan that obtains at last depends primarily on structure and the orientation of artificial defect array and the angle between the Graphene crystal orientation of artificial defect array, and hereinafter is introduced resulting other patterns of structure of other artificial defect array through other embodiment.
Present embodiment provides a kind of processing method of graphene nano pattern, comprising:
1) (300nm SiO on transferring to graphene film at the bottom of the silicon wafer-based with 300nm oxide layer through the mechanical stripping method
2/ Si), confirm the crystal orientation of Graphene, the crystal orientation of Graphene such as a among Fig. 3 through the edge of Graphene
1And a
2Shown in;
2) spin coating one deck PMMA photoresist on sample forms a plurality of circular holes with electron beam exposure and developing technique on photoresist, and Circularhole diameter is 50nm, and these a plurality of circular holes are arranged in triangulation point system of battle formations case as shown in Figure 6, and makes the orientation b of this triangle dot matrix
1Be parallel to Graphene crystal orientation a
1
3) carry out etching with oxygen plasma, the triangulation point system of battle formations case on the photoresist is transferred on the Graphene, with acetone photoresist is cleaned up then;
4) carry out etching with methane plasma, etching temperature is 500 ℃, air pressure 0.4Torr; Plasma power is 100W, and etching speed is 8nm/min, and a plurality of circular holes are enlarged gradually; Form a plurality of hex holes as shown in Figure 7, thereby obtain a kind of Graphene superlattice structure.
According to present embodiment, can on the basis of step 4), carry out step 5) and continue to carry out etching with methane plasma, further enlarge hex hole, each hex hole is overlapped each other, thereby form graphene quantum dot array as shown in Figure 8.
Present embodiment provides a kind of processing method of graphene nano pattern, and is basic identical with the method that embodiment 2 provides, and the orientation of dot matrix is different with angle between the Graphene crystal orientation in the triangulation point system of battle formations case that its difference is to be designed, and makes b
1With a
1Be 30 ° of angles, carry out etching with methane plasma after, form cellular Graphene superlattice structure as shown in Figure 9.
According to present embodiment, after forming cellular Graphene superlattice structure as shown in Figure 9, can also carry out further methane plasma etching, thereby between two adjacent hex holes, form graphene nanobelt.
Embodiment 4
Present embodiment provides the processing method of another kind of graphene nano pattern; Be definite mode in Graphene crystal orientation with the difference of the foregoing description; All confirm the crystal orientation of Graphene in the foregoing description through the edge of Graphene; The Graphene crystal orientation that this method is confirmed is more coarse usually, and present embodiment provides a kind of new method, can control the orientation of artificial defect array and the angle between the Graphene crystal orientation more accurately.
The processing method of the graphene nano pattern that present embodiment provides comprises:
1) (300nm SiO on transferring to graphene film at the bottom of the silicon wafer-based with 300nm oxide layer through the mechanical stripping method
2/ Si);
2) on graphene film, etch an aperture;
3) use the hydrogen plasma etching, this aperture is extended to the hexagon macropore, confirm the crystal lattice orientation of Graphene according to the orientation at the edge of this hexagon macropore;
4) spin coating one deck PMMA photoresist on sample forms a plurality of circular holes with electron beam exposure and developing technique on photoresist, and Circularhole diameter is 50nm, and these a plurality of circular holes are arranged in square lattice pattern as shown in Figure 4, and makes the orientation c of this square lattice
1Be parallel to Graphene crystal orientation a
1
5) carry out etching with oxygen plasma, the square lattice design transfer on the photoresist to Graphene, is cleaned up photoresist with acetone then;
6) carry out etching with hydrogen plasma, etching temperature is 400 ℃, and air pressure 0.35Torr, hydrogen plasma power are 50W, and etching speed is 4nm/min, and a plurality of circular holes are enlarged gradually, forms a plurality of hex holes shown in Fig. 2 d.
In the present embodiment, also the triangle dot matrix in embodiment 2 and 3 can be the structure of artificial defect dot matrix be designed to, embodiment 2 or 3 resulting patterns can be obtained equally through the angle between adjustment dot matrix orientation and the Graphene orientation.
According to one embodiment of present invention, wherein can also utilize the additive method except that Mechanical Method to transfer to graphene film in the substrate, this substrate also is not limited to have the silicon chip of 300nm oxide layer, can select the substrate of other materials according to practical application.
According to one embodiment of present invention; Wherein the dot matrix pattern of artificial defect is not limited to triangle dot matrix and rectangular lattice; Angle between dot matrix orientation and the Graphene crystal orientation also is not limited to the angle described in the foregoing description, and those skilled in the art can easily design suitable dot matrix pattern and suitable angle according to required Graphene pattern.
According to one embodiment of present invention, wherein the manufacturing approach of artificial defect is not limited to photoetching, also can utilize the additive method manufacturing, like nano impression, mechanical shock, laser scanning etc.The shape of artificial defect also is not limited to circular hole, also can be square opening, bellmouth etc.
According to one embodiment of present invention, wherein the size of artificial defect tens to the hundreds of nanometer.
According to one embodiment of present invention, contain temperature that hydrogen plasma carries out etching preferably in room temperature to 520 ℃, air pressure is preferably less than 1Torr, and the power that contains hydrogen plasma is preferably at 30-120W, and etching speed is preferably below 15nm/min.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is specified with reference to embodiment; Those of ordinary skill in the art is to be understood that; Technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and the scope of technical scheme of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. the processing method of a graphene nano pattern comprises:
On Graphene, form artificial defect;
With containing hydrogen plasma this Graphene is carried out anisotropic etching.
2. method according to claim 1, wherein said artificial defect comprises the hole.
3. method according to claim 1, wherein said artificial defect can be arranged in the dot matrix pattern.
4. method according to claim 3, wherein said dot matrix pattern can be triangle dot matrix or rectangular lattice.
5. method according to claim 1, wherein artificial defect can form through photoetching, nano impression, mechanical shock, laser scanning.
6. method according to claim 1 wherein with containing the anisotropic etching of hydrogen plasma to Graphene, increases artificial defect gradually, till forming required pattern.
7. method according to claim 1, the parameter of wherein said hydrogeneous plasma etching is: reaction temperature, room temperature to 520 ℃; Air pressure is less than 1Torr; Plasma power, 30-120W; Etching speed was less than 15nm/ minute.
8. method according to claim 3 also comprises and confirms the Graphene crystal lattice orientation, and designs orientation and the angle between the Graphene crystal lattice orientation of the dot matrix pattern of said artificial defect.
9. method according to claim 8, confirm that wherein the method for Graphene crystal lattice orientation comprises:
On graphene film, etch an aperture;
Use hydrogeneous plasma etching, this aperture is extended to the hexagon macropore, confirm the crystal lattice orientation of Graphene according to the orientation at the edge of this hexagon macropore.
10. according to claim 1,6,7 or 9 described methods, wherein contain the plasma that hydrogen plasma comprises that hydrogen, methane, ethene, steam generate.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103021808A (en) * | 2012-11-29 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method for preparing graphene image with specific edge |
| CN103787270A (en) * | 2014-01-27 | 2014-05-14 | 中国科学院物理研究所 | Method for processing graphene superlattice nano-structure with atomic force microscope |
| CN103789204A (en) * | 2012-10-29 | 2014-05-14 | 中国科学院微电子研究所 | Graphene sequencing device and manufacturing method thereof |
| CN105006482A (en) * | 2015-07-08 | 2015-10-28 | 上海集成电路研发中心有限公司 | Preparation method of graphene field effect transistor |
| CN105399049A (en) * | 2015-12-03 | 2016-03-16 | 中山大学 | Micro-nano structure of two-dimensional atomic material and patterning preparation method |
| CN105987990A (en) * | 2015-03-06 | 2016-10-05 | 兰州空间技术物理研究所 | Simple method for representing crystalline state of graphene |
| CN106442468A (en) * | 2016-11-22 | 2017-02-22 | 深圳大学 | Raman spectrum imaging resolution target and preparation method thereof |
| CN107200317A (en) * | 2017-04-14 | 2017-09-26 | 北京航空航天大学 | A kind of method that loose structure graphene is prepared based on laser |
| CN107622961A (en) * | 2016-07-15 | 2018-01-23 | 延世大学校产学协力团 | Utilize the manufacture device and method of the semiconductor devices of two-dimensional nano material |
| CN109437171A (en) * | 2013-08-13 | 2019-03-08 | 医药研究委员会 | Graphene is modified |
| CN109721049A (en) * | 2017-10-30 | 2019-05-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of graphene band that edge is neat, preparation method and application |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101285175A (en) * | 2008-05-29 | 2008-10-15 | 中国科学院化学研究所 | Process for preparing graphenes by chemical vapour deposition method |
| WO2009059193A1 (en) * | 2007-10-31 | 2009-05-07 | The Trustees Of Columbia University In The City Of New York | Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials |
| CN101503174A (en) * | 2009-03-18 | 2009-08-12 | 北京大学 | Method for cutting graphite alkene by titanium dioxide photocatalysis |
| KR20100112728A (en) * | 2009-04-10 | 2010-10-20 | 포항공과대학교 산학협력단 | The method of distributing catalysts on graphene |
| CN102180439A (en) * | 2011-03-31 | 2011-09-14 | 华中科技大学 | Carbon microtructure with graphene integrated on surface and preparation method thereof |
-
2011
- 2011-10-20 CN CN2011103218067A patent/CN102358614A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009059193A1 (en) * | 2007-10-31 | 2009-05-07 | The Trustees Of Columbia University In The City Of New York | Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials |
| CN101285175A (en) * | 2008-05-29 | 2008-10-15 | 中国科学院化学研究所 | Process for preparing graphenes by chemical vapour deposition method |
| CN101503174A (en) * | 2009-03-18 | 2009-08-12 | 北京大学 | Method for cutting graphite alkene by titanium dioxide photocatalysis |
| KR20100112728A (en) * | 2009-04-10 | 2010-10-20 | 포항공과대학교 산학협력단 | The method of distributing catalysts on graphene |
| CN102180439A (en) * | 2011-03-31 | 2011-09-14 | 华中科技大学 | Carbon microtructure with graphene integrated on surface and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| ZHIWEN SHI: "Patterning Graphene with Zigzag Edges by Self-Aligned Anisotropic Etching", 《ADVANCED MATERIALS》, vol. 23, no. 27, 19 May 2011 (2011-05-19), pages 3061 * |
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| CN103021808A (en) * | 2012-11-29 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method for preparing graphene image with specific edge |
| CN109437171B (en) * | 2013-08-13 | 2022-11-22 | 英国研究与创新署 | Graphene modification |
| CN109437171A (en) * | 2013-08-13 | 2019-03-08 | 医药研究委员会 | Graphene is modified |
| CN103787270A (en) * | 2014-01-27 | 2014-05-14 | 中国科学院物理研究所 | Method for processing graphene superlattice nano-structure with atomic force microscope |
| CN105987990A (en) * | 2015-03-06 | 2016-10-05 | 兰州空间技术物理研究所 | Simple method for representing crystalline state of graphene |
| CN105006482B (en) * | 2015-07-08 | 2018-04-06 | 上海集成电路研发中心有限公司 | A kind of preparation method of graphene field effect transistor |
| CN105006482A (en) * | 2015-07-08 | 2015-10-28 | 上海集成电路研发中心有限公司 | Preparation method of graphene field effect transistor |
| CN105399049A (en) * | 2015-12-03 | 2016-03-16 | 中山大学 | Micro-nano structure of two-dimensional atomic material and patterning preparation method |
| CN105399049B (en) * | 2015-12-03 | 2017-05-03 | 中山大学 | Micro-nano structure of two-dimensional atomic material and patterning preparation method |
| CN107622961A (en) * | 2016-07-15 | 2018-01-23 | 延世大学校产学协力团 | Utilize the manufacture device and method of the semiconductor devices of two-dimensional nano material |
| CN107622961B (en) * | 2016-07-15 | 2021-05-25 | 延世大学校产学协力团 | Two-dimensional nano-material processing device and method |
| CN106442468A (en) * | 2016-11-22 | 2017-02-22 | 深圳大学 | Raman spectrum imaging resolution target and preparation method thereof |
| CN107200317A (en) * | 2017-04-14 | 2017-09-26 | 北京航空航天大学 | A kind of method that loose structure graphene is prepared based on laser |
| CN109721049B (en) * | 2017-10-30 | 2021-03-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene strip with neat edge, and preparation method and application thereof |
| CN109721049A (en) * | 2017-10-30 | 2019-05-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of graphene band that edge is neat, preparation method and application |
| CN112354375A (en) * | 2020-10-23 | 2021-02-12 | 北京大学 | Decoupling etching method for introducing nano-pores into graphene |
| CN112354375B (en) * | 2020-10-23 | 2021-12-28 | 北京大学 | Decoupling etching method for introducing nano-pores into graphene |
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