CN109721049A - A kind of graphene band that edge is neat, preparation method and application - Google Patents
A kind of graphene band that edge is neat, preparation method and application Download PDFInfo
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- CN109721049A CN109721049A CN201711036880.8A CN201711036880A CN109721049A CN 109721049 A CN109721049 A CN 109721049A CN 201711036880 A CN201711036880 A CN 201711036880A CN 109721049 A CN109721049 A CN 109721049A
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Abstract
The invention discloses a kind of graphene band that edge is neat, preparation method and applications.The preparation method includes: that graphene is carried out photolithography patterning, metal film is grown on patterned graphene, the metal film is removed later, hydrogen gas plasma etching processing is carried out to the patterned graphene, obtains the neat graphene band in edge.The present invention passes through on growth metal to not protected graphene; a large amount of defect is manufactured to increase substantially etch rate; then recycle hydrogen gas plasma to the anisotropic etching mechanism of graphene; there is finally obtained graphene band and account for leading geometry with sawtooth pattern edge, to make obtained graphene band carrier mobility with higher and lower resistivity；Technological operation simultaneously is simple and compatible with modern semiconductors processing technology, is expected to improve the performance of the device based on graphene band, application prospect is extensive.
Description
Technical field
It is the present invention relates to a kind of preparation method of graphene band, in particular to a kind of to utilize hydrogen gas plasma etching knot
Closing coating technique preparation has the method and application of graphene band at the neat edge of sawtooth pattern, belongs to nano material technology neck
Domain.
Background technique
Graphene is by carbon atom with SP2The honeycomb monoatomic layer two dimensional crystal that hydridization is formed, because of its unique energy band
Structure and excellent physical property are expected to have very on transparent electrode, high-performance detector, photoelectric device and wearable device
Good application prospect.But the characteristics of due to zero energy gap of graphene, lead to there is no "Off" state, limits it and led in semiconductor devices
The application in domain.And a kind of mode of the graphene band especially graphene nano band as opening energy gap, while being also device
It minimizes, the only way of Highgrade integration, receives significant attention and study.It has developed in recent years and has much prepared graphene and receive
The method of rice band, such as: exposure mask combination oxygen plasma etch splits carbon nanotube, is directly raw in patterned substrate
The methods of chemical synthesis long or using molecular precursor.But that there is edges is not neat for the band of these methods preparation,
Technique is relative complex, and band length, width are uncontrollable and are difficult to the disadvantages of positioning.Therefore develop a kind of length, width can
It controls and the neat preparation method of strip edge seems particularly significant.
Summary of the invention
The main purpose of the present invention is to provide a kind of graphene band that edge is neat, preparation method and application, from
And overcome deficiency in the prior art.
For achieving the above object, present invention employs following technical solutions:
The embodiment of the invention provides a kind of preparation methods of graphene band that edge is neat comprising:
Graphene is subjected to photolithography patterning；
Metal film is grown on patterned graphene, later removes the metal film；
Hydrogen gas plasma etching processing is carried out to the patterned graphene, obtains the neat graphene strips in edge
Band.
In some more specific embodiments, the preparation method further include: before carrying out photolithography patterning, first
It transfers graphene on substrate.
The embodiment of the invention also provides a kind of graphene bands that the edge by preceding method preparation is neat.
Preferably, the edge of the graphene band is in regular figure or abnormity.
Preferably, the graphene band, which has, accounts for leading geometry with sawtooth pattern edge.
The embodiment of the invention also provides the neat graphene band of preceding edge in prepare photoelectric device, senser element,
Purposes in low energy-consumption electronic device or electronic interconnection field.
Compared with the prior art, the beneficial effects of the present invention are:
The present invention combines coating technique using hydrogen gas plasma etching, passes through growth metal to not protected graphene
On, a large amount of defect is manufactured to increase substantially etch rate, and will not influence the graphene under exposure mask protection, then again
Using hydrogen gas plasma to the anisotropic etching mechanism of graphene, there is finally obtained graphene band with sawtooth pattern
Edge accounts for leading geometry.This method will not destroy during the preparation process graphene band lattice structure, can be most
The intrinsic properties of the holding graphene band of limits reduces the unordered caused scattering in edge, to make because edge is neat
Graphene band conductivity with higher, carrier mobility and lower resistivity.And this method can prepare width
Degree can reconcile the very big band of length-width ratio, and technological operation is simple and compatible with modern semiconductors processing technology, be expected to raising and be based on
The performance of the device of graphene band has in terms of electronic interconnection, photoelectric device, senser element and low-power consumption and widely answers
Use prospect.
Detailed description of the invention
Fig. 1 is the scanning electron microscope (SEM) photograph for the graphene band that edge is neat in an exemplary embodiments of the invention.
Fig. 2 a- Fig. 2 b is the polarization Raman figure of the neat graphene band in the obtained edge of the embodiment of the present invention 1.
Fig. 3 is the field-effect test result schematic diagram of the neat graphene band in the obtained edge of the embodiment of the present invention 1.
Fig. 4 is the C-V characteristic test result schematic diagram of the neat graphene band in the obtained edge of the embodiment of the present invention 1.
Fig. 5 is in reference examples 1 of the present invention not using the scanning electron microscope (SEM) photograph of the sample of hydrogen gas plasma etching.
Fig. 6 is in reference examples 2 of the present invention not using the scanning electron microscope (SEM) photograph of the sample of coating technique.
Specific embodiment
As previously mentioned, inventor is studied for a long period of time and largely practiced in view of the defect of the prior art, it is able to propose this
The technical solution of invention mainly utilizes hydrogen gas plasma etching that coating technique is combined to prepare sawtooth pattern edge graphene strips
Band.The technical solution, its implementation process and principle etc. will be further explained as follows.
As the one aspect of technical solution of the present invention, involved in be a kind of graphene band that edge is neat system
Preparation Method comprising:
Graphene is subjected to photolithography patterning；
Metal film is grown on patterned graphene, later removes the metal film；
Hydrogen gas plasma etching processing is carried out to the patterned graphene, obtains the neat graphene band in edge
(also referred to as graphene nano band).
In some more specific embodiments, the preparation method further include: before carrying out photolithography patterning, first
It transfers graphene on substrate.
Specifically, the preparation method includes: to use common photoetching or electron beam lithography graphical, graphene is migrated
Onto substrate, required figure then is exposed using photoetching or electron beam lithography, dimension of picture can be in nanoscale
It can be in micro-meter scale.I.e. using common photoetching or electron beam lithography is formed on the graphene of large area design with one
Determine the exposure mask of pattern.
Further, the graphene can be by chemical vapour deposition technique, mechanical stripping method, epitaxial growth method, oxidation
What any one or two or more combinations in graphite reduction method and graphite intercalation dissociation or other methods were prepared, but
It is without being limited thereto.
Further, the substrate can be silicon wafer, gallium nitride, boron nitride, polyester film, Kapton or its
His rigidity, flexible or organic and inorganic substrate, preferably silica/silicon substrate, but not limited to this.
In some more specific embodiments, the preparation method includes: using coating technique in patterned stone
Deposition forms a metal film on black alkene, is removed later with removing agent for the metal film.
Preferably, the coating technique can be electron beam evaporation, thermal evaporation or magnetron sputtering etc., but not limited to this.
Preferably, the metal film with a thickness of 1~500nm.Using being plated on the graphene of coating technique after development
A layer thickness 1nm~500nm metallic film, in order to make photoresist not be affected substantially during plated film, Yao Jinliang
Reduce operating temperature.
Preferably, the growth of metal film can be electron beam evaporation, thermal evaporation, sputtering or other growth patterns, selected
Metal can be zinc, aluminium, iron, magnesium etc., be also possible to other metals, but not limited to this.
Further, the removal agent includes the solution that can dissolve the metal film, such as dilute acid soln, diluted alkaline are molten
Liquid or other solution etc..
In some more specific embodiments, the preparation method include: with room temperature to 200 DEG C temperature, 50~
The power of 300W, the flow of 10~100SCCM, 10~600Pa pressure to the patterned graphene carry out hydrogen etc. from
Daughter 1~60min of etching processing obtains the neat graphene band in edge.Wherein, make cavity using vacuum pump in etching process
It is interior to be in low-pressure state.
Further, the hydrogen gas plasma can be is generated by modes such as inductive coupling generation, electrode pressurizations, but not
It is limited to this.
Further, the hydrogen gas plasma etching processing can be in room temperature to carrying out within the scope of 200 DEG C, without limiting to
In a certain specific temperature.
In some more specific embodiments, the preparation method further include: with cleaning agent to hydrogen gas plasma
Obtained graphene is cleaned after etching processing.
Wherein, the cleaning agent can use acetone, isopropanol etc., but not limited to this.
In some more specifically embodiments, the preparation method may include: by common photoetching or electronics
Beam photoetching is graphical the large-area graphene being transferred on silica/silicon substrate, deposits one layer of metal by coating technique
Film recycles diluted acid, diluted alkaline or other solution that metal layer is dissolved, then recycles hydrogen on patterned graphene
Property of the plasma along crystal orientation etching graphene, the neat graphene band in the edge being supported on silicon wafer.
Specifically, the preparation method may comprise steps of:
Centainly scheme firstly, forming having for design on the graphene of large area using common photoetching or electron beam lithography
The exposure mask of case.
Then, using plating a layer thickness on coating technique sample after development in the metallic film of 1nm~500nm,
In order to make photoresist not be affected substantially during plated film, operating temperature is reduced as far as possible.
Then, the metal layer plated is dissolved using diluted acid, diluted alkaline or other solution.
Finally, the graphene exposed is etched away using hydrogen gas plasma, the graphene under exposure mask protection is left behind,
It is obtained after washing off photoresist with acetone and isopropanol with the neat graphene band of design width and length and edge.
Wherein, among one more specifically case study on implementation, the preparation method specifically includes the following steps:
Graphene is transferred in target substrate by the method for dry method or wet etching, then passes through painting by the first step
Glue exposes desired figure using common photoetching or electron beam lithography and develops in developer solution.Second step, in development
On the basis of, certain thickness active metal is grown on sample using electron beam evaporation, thermal evaporation, sputtering or other modes.
Third step is immersed in the graphene that grown certain thickness active metal in dilute acid soln to remove active metal layer.4th
The graphene for eliminating active metal layer is etched 1 minute~60 points in hydrogen gas plasma with the power of 50W~300W by step
Clock, hydrogen gas plasma generates hydrocarbon with the graphite alkene reaction being exposed and is pumped, and has photoresist to protect
Part is then unaffected.5th step, the neat graphene strips in edge can be obtained by dissolving photoresist with acetone and isopropanol
Band.This method manufactures a large amount of defect by growing metal layer on not protected graphene to increase substantially quarter
Rate is lost, finally obtained graphene band then is made to the anisotropic etching mechanism of graphene using hydrogen gas plasma
With accounting for leading geometry with sawtooth pattern edge.
The graphene band neat another aspect provides the edge prepared by preceding method of the embodiment of the present invention.
Preferably, prepared to can be the neat graphene band in edge, it is also possible to other various regular figures
Or abnormity, but not limited to this.
Preferably, the graphene band, which has, accounts for leading geometry with sawtooth pattern edge.
Preferably, for the neat graphene band in the edge in being periodically uniformly distributed, line width can be in tens nanometer
To some tens of pm, length-width ratio is 1:1~2000:1, and resistivity is 0.71~4.4k Ω, mobility is 566.05~
1361.3cm2v-1s-1.Interval between the width and adjacent ribbons of band can be adjusted by the layout design before photoetching
It is whole.
The other side of the embodiment of the present invention additionally provides the neat graphene band of preceding edge in preparing phototube
Purposes in the fields such as part, senser element, low energy-consumption electronic device or electronic interconnection.
By above-mentioned technical proposal, the present invention combines coating technique using hydrogen gas plasma etching, by growing metal
Onto not protected graphene, a large amount of defect is manufactured to increase substantially etch rate, and will not influence exposure mask guarantor
Then graphene under shield recycles hydrogen gas plasma to the anisotropic etching mechanism of graphene, makes finally obtained stone
Black alkene band, which has, accounts for leading geometry with sawtooth pattern edge.This method will not destroy graphene strips during the preparation process
The lattice structure of band, the intrinsic properties that graphene band can be kept to greatest extent because edge is neat, reduce edge without
Scattering caused by sequence, to make graphene band conductivity with higher, carrier mobility and lower resistivity.And
This method, which can prepare width, can reconcile the very big band of length-width ratio, technological operation it is simple and with modern semiconductors processing technology
It is compatible, it is expected to improve the performance of the device based on graphene band, in electronic interconnection, photoelectric device, senser element and low function
Consumption aspect is with a wide range of applications.
Below with reference to several preferred embodiments and attached drawing, further details of the technical solution of the present invention, but this hair
It is bright to be not limited only to following embodiments.
Embodiment 1
The method that the present embodiment prepares the neat graphene band in edge includes the following steps:
(1) substrate material selects the thermal oxide growth silicon wafer of 300nm silica, after starting the cleaning processing to substrate
Graphene in migration.
(2) common photoetching or electron beam lithography carry out gluing to the sample for having migrated graphene on substrate, then utilize
Photoetching or electron beam lithography expose required figure, and dimension of picture can be in nanoscale or in micro-meter scale.
(3) growth of metal film: the zinc that growth thickness is 20nm on the sample after photoetching and development using magnetron sputtering.
(4) hydrogen gas plasma etches: at room temperature, using pure hydrogen plasma, power setting 50W is used
100SCCM flow, air pressure 600Pa, etch period 5 minutes.Made in cavity using vacuum pump in low pressure shape in etching process
State.After the completion of etching, cleaning photoresist with acetone and isopropanol can be obtained the neat graphene band in edge.
Embodiment 2
The method that the present embodiment prepares the neat graphene band in edge includes the following steps:
(1) substrate material selects the thermal oxide growth silicon wafer of 100nm silica, after starting the cleaning processing to substrate
Graphene in migration.
(2) common photoetching or electron beam lithography carry out gluing to the sample for having migrated graphene on substrate, then utilize
Photoetching or electron beam lithography expose required figure, and dimension of picture can be in nanoscale or in micro-meter scale.
(3) growth of metal film: the magnesium that growth thickness is 1nm on the sample after photoetching and development using magnetron sputtering.
(4) hydrogen gas plasma etches: at room temperature, using pure hydrogen plasma, power setting 100W is used
10SCCM flow, air pressure 60Pa, etch period 60 minutes.Made in cavity using vacuum pump in low pressure shape in etching process
State.After the completion of etching, cleaning photoresist with acetone and isopropanol can be obtained the neat graphene band in edge.
Embodiment 3
The method that the present embodiment prepares the neat graphene band in edge includes the following steps:
(1) substrate material selects gallium nitride piece, and upper graphene is migrated after starting the cleaning processing to substrate.
(2) common photoetching or electron beam lithography carry out gluing to the sample for having migrated graphene on substrate, then utilize
Photoetching or electron beam lithography expose required figure, and dimension of picture can be in nanoscale or in micro-meter scale.
(3) growth of metal film: using magnetron sputtering, growth thickness is 500nm's on the sample after photoetching and development
Zinc.
(4) hydrogen gas plasma etches: at room temperature, using pure hydrogen plasma, power setting 300W is used
50SCCM flow, air pressure 300Pa, etch period 1 minute.Made in cavity using vacuum pump in low pressure shape in etching process
State.After the completion of etching, cleaning photoresist with acetone and isopropanol can be obtained the neat graphene band in edge.
Embodiment 4
The method that the present embodiment prepares the neat graphene band in edge includes the following steps:
(1) substrate material selects gallium nitride piece, and upper graphene is migrated after starting the cleaning processing to substrate.
(2) common photoetching or electron beam lithography carry out gluing to the sample for having migrated graphene on substrate, then utilize
Photoetching or electron beam lithography expose required figure, and dimension of picture can be in nanoscale or in micro-meter scale.
(3) growth of metal film: using magnetron sputtering, growth thickness is 300nm's on the sample after photoetching and development
Aluminium.
(4) hydrogen gas plasma etches: at 200 DEG C, using pure hydrogen plasma, power setting 150W is used
80SCCM flow, air pressure 300Pa, etch period 10 minutes.Made in cavity using vacuum pump in low pressure shape in etching process
State.After the completion of etching, cleaning photoresist with acetone and isopropanol can be obtained the neat graphene band in edge.
Embodiment 5
The method that the present embodiment prepares the neat graphene band in edge includes the following steps:
(1) substrate material selects the thermal oxide growth silicon wafer of 300nm silica, after starting the cleaning processing to substrate
Graphene in migration.
(2) common photoetching or electron beam lithography carry out gluing to the sample for having migrated graphene on substrate, then utilize
Photoetching or electron beam lithography expose required figure, and dimension of picture can be in nanoscale or in micro-meter scale.
(3) growth of metal film: using magnetron sputtering, growth thickness is 100nm's on the sample after photoetching and development
Aluminium.
(4) hydrogen gas plasma etches: at 100 DEG C, using pure hydrogen plasma, power setting 200W is used
30SCCM flow, air pressure 200Pa, etch period 30 minutes.Made in cavity using vacuum pump in low pressure shape in etching process
State.After the completion of etching, cleaning photoresist with acetone and isopropanol can be obtained the neat graphene band in edge.
Further, inventor's graphene band neat to the edge prepared with technique described in embodiment 1 carries out
Characterization, and its mechanism inquired into, it is specific as follows:
(1) characterization of graphene band pattern
Refering to fig. 1, it can be seen that the neat graphene band in edge prepared by embodiment 1 is periodically to be uniformly distributed
, and the width of single strip is about 150nm.Before interval between the width and adjacent ribbons of band can be by photoetching
Layout design be adjusted.
(2) characterization of graphene band marginal texture
Graphene edge generally has two kinds of marginal textures of sawtooth pattern and armchair, in order to determine the stone of this technique preparation
Black alkene strip edge structural information, inventor are characterized using polarization Raman spectrum.It was found that D peak intensity and G peak intensity
Ratio (the I of degreeD/IG) change with the variation of angle between the polarization direction and strip edge of polarised light, it is specific such as Fig. 2 a and
Shown in Fig. 2 b.The ratio of D peak intensity and G peak intensity is maximum when parallel between polarization direction and strip edge, works as polarization direction
The ratio of D peak intensity and G peak intensity is minimum when vertical between strip edge, this maximum value is 1.4 times of minimum value, according to
This, it can be determined that, the graphene strips belt edge of this technique preparation is that leading edge is accounted for saw-tooth-type structures.
(3) characterization of graphene band electrical properties
The quality for the graphene band that for further evaluation prepared by embodiment 1, inventor is also by the graphite of preparation
Alkene band is made into graphene band fieldtron by the photoetching process of standard, and tests its electrons transport property.Such as
Shown in Fig. 3, the field-effect mobility measured is up to 1332.2cm at room temperature2V-1s-1.As shown in figure 4, the electricity under room temperature normal pressure
Resistance rate is 0.782k Ω.Pass through the test result of above-mentioned mobility and resistivity, it can be deduced that: prepared by the embodiment of the present invention 1
Graphene band has very high quality, has potential application value in fields such as photoelectric device, senser element, electronic interconnections.
Reference examples 1
This reference examples does not use hydrogen gas plasma lithographic technique, includes the following steps:
(1) substrate material selects the thermal oxide growth silicon wafer of 300nm silica, after starting the cleaning processing to substrate
Graphene in migration.
(2) common photoetching or electron beam lithography carry out gluing to the sample for having migrated graphene on substrate, then utilize
Photoetching or electron beam lithography expose required figure, and dimension of picture can be in nanoscale or in micro-meter scale.
(3) growth of metal film: the zinc that growth thickness is 40nm on the sample after photoetching and development using magnetron sputtering.
(4) it does not use hydrogen gas plasma to etch, directly zinc is dissolved using dilute hydrochloric acid, is then gone with acetone and isopropanol
Except photoresist, the graphene exposed as seen from Figure 5 is not etched away, but with the graphite that is photo-etched glue and protects
Alkene connects together, and is still continuous sheet of film, and edge is non-neat.After tested, mobility and resistivity etc. are electric
It learns performance and is obviously not so good as the neat graphene band in the obtained edge embodiment 1-5.
Reference examples 2
This reference examples does not use coating technique, includes the following steps:
(1) substrate material selects the thermal oxide growth silicon wafer of 300nm silica, after starting the cleaning processing to substrate
Graphene in migration.
(2) common photoetching or electron beam lithography carry out gluing to the sample for having migrated graphene on substrate, then utilize
Photoetching or electron beam lithography expose required figure, and dimension of picture can be in nanoscale or in micro-meter scale.
(3) coating technique is not used, is directly etched using hydrogen gas plasma, power setting 100W, using 70SCCM
Flow, air pressure 400Pa, etch period 20 minutes.Then photoresist is removed with acetone and isopropanol, as seen from Figure 6 cruelly
The graphene of exposing is not etched away still, but is connected together with the graphene for being photo-etched glue and protect, and is still a piece of
Continuous film, edge are non-neat.After tested, the electric properties such as mobility and resistivity are obviously not so good as embodiment 1-
The neat graphene band in 5 obtained edges.
In conclusion the present invention combines plated film skill using hydrogen gas plasma etching by the technical solution of embodiment 1-5
Art, by manufacturing a large amount of defect to increase substantially etch rate on growth metal to not protected graphene, and
It will not influence the lower graphene of exposure mask protection, then recycling hydrogen gas plasma is to the anisotropic etching mechanism of graphene,
There is finally obtained graphene band and account for leading geometry with sawtooth pattern edge.This method is during the preparation process not
The lattice structure of graphene band can be destroyed, the intrinsic properties of graphene band can be kept to greatest extent, because edge is neat
It is whole, reduce edge it is unordered caused by scattering, thus make graphene band conductivity with higher, carrier mobility and compared with
Low resistivity.And this method can prepare width can reconcile the very big band of length-width ratio, technological operation it is simple and with it is existing
It is compatible for semiconducter process, be expected to improve the performance of the device based on graphene band, electronic interconnection, photoelectric device,
It is with a wide range of applications in terms of senser element and low-power consumption.
In addition, inventor also refers to the mode of embodiment 1- embodiment 5, with the other raw materials listed in this specification
It is tested with condition etc., and conductivity, carrier mobility and lower resistance with higher has equally successfully been made
Rate, graphene band that edge is neat.
It should be appreciated that the above preferred embodiment is merely to illustrate the contents of the present invention, in addition to this, there are also other by the present invention
Embodiment, as long as those skilled in the art because of technical inspiration involved in the present invention, and use equivalent replacement or equivalent deformation
The technical solution that mode is formed is fallen within the scope of protection of the present invention.
Claims (10)
1. a kind of preparation method for the graphene band that edge is neat, characterized by comprising:
Graphene is subjected to photolithography patterning；
Metal film is grown on patterned graphene, later removes the metal film；
Hydrogen gas plasma etching processing is carried out to the patterned graphene, obtains the neat graphene band in edge.
2. preparation method according to claim 1, it is characterised in that further include: before carrying out photolithography patterning, first will
Graphene is transferred on substrate.
3. preparation method according to claim 1 or 2, it is characterised in that: the graphene is by chemical vapour deposition technique, machine
Any one in tool stripping method, epitaxial growth method, graphite oxide reduction method and graphite intercalation dissociation or two or more combinations
It is prepared.
4. preparation method according to claim 2, it is characterised in that: the substrate includes RF magnetron sputtering and/or inorganic lining
Bottom；Preferably, the substrate includes rigid substrate and/or flexible substrate；Preferably, the substrate includes silicon wafer, gallium nitride, nitrogen
Change boron, polyester film, any one in Kapton；Especially preferably silica/silicon substrate.
5. preparation method according to claim 1 or 2, it is characterised in that: the photolithography patterning includes normal light needle drawing
Shape and/or electron beam lithography are graphical；Preferably, the dimension of picture of the photolithography patterning is nanoscale or micron order.
6. preparation method according to claim 1, characterized by comprising: using coating technique in patterned graphene
Upper deposition forms a metal film, is removed later with removing agent for the metal film；Preferably, the coating technique includes electron beam
Any one in evaporation, thermal evaporation or magnetron sputtering or two or more combinations；Preferably, the metal film with a thickness of 1
~500nm；Preferably, the material of the metal film includes any one in zinc, aluminium, iron and magnesium or two or more combinations；
Preferably, the removal agent includes the solution that can dissolve the metal film；Preferably, the removal agent includes dilute acid soln
And/or dilute alkaline soln.
7. preparation method according to claim 1, characterized by comprising: temperature, 50~300W with room temperature to 200 DEG C
Power, the flow of 10~100SCCM, 10~600Pa pressure hydrogen gas plasma is carried out to the patterned graphene
1~60min of etching processing obtains the neat graphene band in edge；Preferably, the hydrogen gas plasma is by inductive coupling
And/or the mode of electrode pressurization generates.
8. preparation method according to claim 1 or claim 7, it is characterised in that further include: with cleaning agent to hydrogen gas plasma
Obtained graphene is cleaned after etching processing；Preferably, the cleaning agent includes acetone and/or isopropanol.
9. by the graphene band that edge prepared by any one of claim 1-8 the method is neat；Preferably, the graphite
The edge of alkene band is in regular figure or abnormity；Preferably, the graphene band have accounted for sawtooth pattern edge it is leading several
What structure；Preferably, for the graphene band in being periodically uniformly distributed, line width is tens nanometer to some tens of pm, length-width ratio
For 1:1~2000:1, resistivity is 0.71~4.4k Ω, and mobility is 566.05~1361.3cm2v-1s-1。
10. the neat graphene band in edge as claimed in claim 9 is in preparing photoelectric device, senser element, low energy-consumption electronic device
Or the purposes in electronic interconnection field.
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| CN112047327A (en) * | 2020-08-21 | 2020-12-08 | 山西大学 | Preparation method of three-dimensional vertical graphene |
| CN112661140A (en) * | 2020-12-11 | 2021-04-16 | 上海交通大学 | Preparation method of novel graphene nano narrow band |
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