CN102339699A - Field emission triode structure based on graphene - Google Patents
Field emission triode structure based on graphene Download PDFInfo
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- CN102339699A CN102339699A CN2011102931926A CN201110293192A CN102339699A CN 102339699 A CN102339699 A CN 102339699A CN 2011102931926 A CN2011102931926 A CN 2011102931926A CN 201110293192 A CN201110293192 A CN 201110293192A CN 102339699 A CN102339699 A CN 102339699A
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Abstract
The invention relates to a field emission triode structure based on graphene. The field emission triode structure comprises a cathode substrate (1), a support body (7) and an anode (8), wherein the support body (7) is positioned on the cathode substrate (1), the anode (8) is positioned on the support body (7) and parallel to the cathode substrate (1), and the cathode substrate (1), the support body (7) and the anode (8) constitute a cavity; and the field emission triode structure also comprises a cathode electrode (2) positioned in the enclosed cavity, a field emission body (3) for emitting electron beams (9), an insulated dielectric layer (4), a grid electrode (5) and the graphene (6). The field emission triode structure based on the graphene, provided by the invention, can realize high-current uniform emission, has the capability of effectively separating emission of field emission current from acceleration and focusing of electronic beams and can be used for a cold cathode X-ray source, a microwave amplifier tube and a field emission display.
Description
Technical field
The present invention is a kind of field emission tripolar construction, relates to the device architecture design and the material preparation of field electron transmitting device.
Background technology
Field electron transmitting device adopts cold cathode as electron emission source, has that response speed is fast, power is low and characteristics such as reliability height.But field emission electron device also has a certain distance apart from the marketization at present, has some key technology bottlenecks.Wherein the design of three-stage structure and preparation are key factors that influences feds practicability.
Field emission electron device exists electron field emission and electron focusing/two physical processes of acceleration, only adopt two-level structure can not obtain outstanding electron beam characteristic, so three-stage structure is the core of field electron transmitting device.In the three-stage structure of routine, the metal electrode that the band fenestra is set in field emitter the place ahead usually applies a positive voltage as grid on grid; Electronics is launched from field emitter; Pass the motion of grid fenestra anode, collected by anode at last, as shown in Figure 1.
In the field emission tripolar construction of routine, because grid is the electrode of band fenestra, the part electric field is stronger at the edge of fenestra, and therefore the field emission current of corresponding this part is bigger, and emission current is very little in the central area of fenestra.In order to guarantee enough emission currents, improve the emission current uniformity, need reduce membrane pore size as far as possible, membrane pore size is merely 10 ~ 20 microns usually, and this brings very big difficulty to processing and preparing.
Because the electron lens effect of gate electrode film pore electrod, the electronics that sends from emitter is easy to intercepted and captured by gate electrode, thereby has reduced the utilance of electronics.
Summary of the invention
Technical problem:The object of the present invention is to provide a kind of field emission tripolar construction based on Graphene, it can be used for an emission x-ray source, a launched microwave pipe and long hair and penetrate flat-panel monitor.
Technical scheme:Field emission tripolar construction based on Graphene provided by the invention; This field emission tripolar construction comprises cathode base, be positioned at supporter on the cathode base, be positioned on the supporter and the anode parallel with cathode base, and cathode base, supporter and anode constitute a sealed hollow;
This emission tertiary structure also comprises the cathode electrode that is positioned at said sealed hollow, the field emitter that is used for divergent bundle, insulating medium layer, gate electrode, Graphene; Wherein
On cathode base, be provided with the insulating medium layer of band medium fenestra; Cathode electrode is located on the cathode base and is positioned at said medium fenestra; Field emitter is located on the cathode electrode; On insulating medium layer, be provided with the gate electrode of band grid fenestra, Graphene is positioned on the gate electrode and the cover gate fenestra;
The electron beam that field emitter is launched, the electric field action through gate electrode passes graphene layer, and under the effect of anode electric field, bombards anode.
Preferably, the medium fenestra is consistent with the width of grid fenestra.
Preferably, Graphene is individual layer or double-layer graphite alkene, and the thickness of Graphene (6) is less than 10nm.
Preferably, field emitter is any in the little point of metal, silicon tip, CNT, the nano zine oxide.
Beneficial effect:The field emission tripolar construction based on Graphene that the present invention proposes is provided with graphene layer on the grid fenestra; Because graphene layer has good conductive characteristic; So the introducing of graphene layer can form uniform electric field before field emitter; Avoid the field emission current problem of non-uniform that the gate electrode film pore area comes in the common field emission tripolar construction, and can improve an emission total current; What the present invention proposed adopts individual layer, the double-deck layer graphene layer cover gate fenestra that perhaps lacks based on the Graphene field emission tripolar construction; Because the thickness of graphene layer is less than 10nm; Therefore electronics can pass the motion of graphene layer anode; Graphene is very little to the intercepting and capturing of electronics, has improved the effective rate of utilization of electronics; What the present invention proposed adopts individual layer, the double-deck layer graphene layer cover gate fenestra that perhaps lacks based on the Graphene field emission tripolar construction; Cathodic region electric field and anode region electric field are isolated fully; The variation of anode voltage or other focus voltage can not influence the Electric Field Distribution in cathodic region, has avoided electron beam focusing and the interactional problem of emission current in the conventional field emission tripolar construction.
Description of drawings
Fig. 1 is conventional field emission tripolar construction;
Fig. 2 be the present invention propose based on the Graphene field emission tripolar construction;
Wherein have: cathode base 1, cathode electrode 2, field emitter 3, insulating medium layer 4, gate electrode 5, Graphene 6, supporter 7, anode 8.
Embodiment
The present invention will be described below with reference to accompanying drawings.
The present invention proposes a kind of field emission tripolar construction based on Graphene, and this field emission tripolar construction comprises cathode base, cathode electrode, is used for field emitter, insulating medium layer, gate electrode, graphene layer, supporter and the anode of divergent bundle; Wherein:
On cathode base, be provided with cathode electrode, on cathode electrode, be provided with field emitter, insulating medium layer is positioned on the cathode base, on insulating medium layer, is provided with gate electrode, on gate electrode, is provided with graphene layer.Anode is positioned at the cathode base top and is oppositely arranged with cathode base, and fixes through supporter and cathode base.The electron beam that field emitter is launched passes graphene layer and bombards on the anode through the gate electrode modulation.
Field emission body is the little point of metal, the little point of silicon, CNT, nano zine oxide etc.
Graphene layer is individual layer or double-layer graphite alkene, and its thickness is less than 10nm.
To the technological difficulties of common field emission tripolar construction, the present invention proposes a kind of field emission tripolar construction based on Graphene.The field emission tripolar construction based on Graphene that the present invention proposes is adopted the graphene layer cover gate electrode fenestra below the 10nm, before field emitter, forms uniform electric field, has improved field transmitting uniformity, has increased emission current; Because graphene layer cover gate electrode fenestra, between negative electrode-grid between electric field and the grid-intensifying ring electric field relatively independent, avoided the influence to emission current such as accelerating field and focusing electric field; In based on the Graphene field emission tripolar construction, field emission electron passes the graphene layer outgoing, therefore can suitably increase the gate electrode film hole diameter, reduces manufacture difficulty.
The field emission tripolar construction that the present invention proposes based on Graphene; On cathode base, be provided with cathode electrode, on cathode electrode, be provided with field emitter, insulating medium layer is positioned on the cathode base, and thickness of insulating layer is between the 50nm to 100nm; On insulating medium layer, be provided with the gate electrode of band fenestra, film hole diameter can expand to 500nm to 1000nm; On gate electrode, be provided with graphene layer, graphene layer thickness is less than 10nm.Anode is positioned at gate electrode top and parallel with cathode base, between grid and anode, also focusing electrode can be set.
The field emission tripolar construction based on Graphene that the present invention proposes adopts conventional field emitter, like the little point of metal, the little point of silicon, CNT, nano zine oxide etc.
Referring to Fig. 1-2; Field emission tripolar construction based on Graphene provided by the invention, this three-stage structure comprises cathode base 1, cathode electrode 2, field emitter 3, insulating medium layer 4, gate electrode 5, Graphene 6, supporter 7, anode 8 and field emission electron bundle 9;
On cathode base 1, be provided with cathode electrode 2; On cathode electrode 2, be provided with field emitter 3; On cathode base, be provided with insulating medium layer 4, and on insulating medium layer, be provided with gate electrode 5, Graphene 6 is positioned on the gate electrode; Supporter 7 is positioned on the cathode base, and anode 8 is through the parallel placement with cathode base of supporter.The electron beam 9 that field emitter 3 is launched through the electric field action of gate electrode 5, passes graphene layer 6, and under the effect of anode electric field, bombards anode 8.
Graphene 6 is individual layer or double-layer graphite alkene, to guarantee that electron beam passes graphene layer and collected by anode.
The method of preparation is: on cathode base, adopt the method for printing, sintering or plated film, photoetching to prepare cathode electrode; On the cathode electrode through printing, spraying, plated film, be coated with attach or independently method such as growth on cathode electrode, prepare field emission body; On cathode base, adopt the method for the method preparation of printing, sintering or plated film, photoetching to prepare the dielectric layer that has fenestra, the fenestra position is corresponding with field emission body, thereby has avoided the destruction of dielectric layer to field emission body; On dielectric layer, adopt the gate electrode of the method preparation band fenestra of printing, sintering or plated film, photoetching, the gate electrode fenestra is corresponding with the dielectric layer fenestra; The method that adopts chemical vapour deposition (CVD) is at metallic film (preparing graphene layer on like copper film or nickel film), and methods such as employing etched the matrix method or hot releasing adhesive tape are transferred to graphene layer on the gate electrode graphene layer cover gate electrode fenestra.
Anode substrate is an electrically-conductive backing plate, the parallel assembling with cathode base of this anode substrate.With cathode base and anode substrate sealing-in exhaust, form the vacuum working environment in the device.Between anode substrate and the gate electrode some focusing electrodes can also be set, realize focusing e-book.
In the field emission tripolar construction based on Graphene proposed by the invention; On gate electrode, apply different voltages with different; Because graphene layer has the favorable conductive characteristic; Can form a uniform longitudinal electric field in field emitter the place ahead through gate electrode and graphene layer, thus the control autoelectronic current.The electron bombard of launching from field emitter is to the graphene layer that covers on the grid fenestra, because the very thin thickness of graphene layer continues the anode motion so electronics can pass graphene layer.Because graphene layer has been eliminated the divergent lens effect of grid fenestra; So what the present invention proposed can realize the even field emission of big electric current based on the Graphene three-stage structure; And the focusing of electron beam is separated with emission process, thereby obtain better electron beam focusing effect.
The field emission tripolar construction based on Graphene that the present invention proposes adopts individual layer, double-layer graphite alkene layer cover gate electrode fenestra, makes field emission electron can penetrate the motion of graphene layer anode; Adopt little point or nano material as field emitter.
The above is merely preferred embodiments of the present invention; Protection scope of the present invention is not exceeded with above-mentioned execution mode; As long as the equivalence that those of ordinary skills do according to disclosed content is modified or changed, all should include in the protection range of putting down in writing in claims.
Claims (4)
1. field emission tripolar construction based on Graphene; It is characterized in that: this field emission tripolar construction comprises cathode base (1), be positioned at supporter (7) on the cathode base (1), be positioned at supporter (7) goes up and the anode (8) parallel with cathode base (1) cathode base (1), supporter (7) and anode (8) formation one sealed hollow;
This emission tertiary structure also comprises the cathode electrode (2) that is positioned at said sealed hollow, the field emitter (3) that is used for divergent bundle (9), insulating medium layer (4), gate electrode (5), Graphene (6); Wherein,
On cathode base (1), be provided with the insulating medium layer (4) of band medium fenestra; Cathode electrode (2) is located on the cathode base (1) and is positioned at said medium fenestra; Field emitter (3) is located on the cathode electrode (2); On insulating medium layer (4), be provided with the gate electrode (5) of band grid fenestra, Graphene (6) is positioned at gate electrode (5) and goes up and the cover gate fenestra;
The electron beam (9) that field emitter (3) is launched through the electric field action of gate electrode (5), passes graphene layer (6), and under the effect of anode electric field, bombards anode (8).
2. the field emission tripolar construction based on Graphene according to claim 1 is characterized in that: the medium fenestra is consistent with the width of grid fenestra.
3. the field emission tripolar construction based on Graphene according to claim 1 is characterized in that: Graphene (6) is individual layer or double-layer graphite alkene, and the thickness of Graphene (6) is less than 10nm.
4. the field emission tripolar construction based on Graphene according to claim 1 is characterized in that: field emitter (3) is any in the little point of metal, silicon tip, CNT, the nano zine oxide.
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| CN102709142A (en) * | 2012-06-19 | 2012-10-03 | 清华大学 | Nanopore-based electric beam field emitting device |
| CN103632903A (en) * | 2013-03-12 | 2014-03-12 | 东南大学 | Cold-cathode triode with electric field compensation |
| CN103943441A (en) * | 2014-05-10 | 2014-07-23 | 福州大学 | Field emission energizing gas discharge display device and driving method thereof |
| CN104024147A (en) * | 2011-12-29 | 2014-09-03 | 埃尔瓦有限公司 | Electronic device graphene grid |
| US20150060757A1 (en) * | 2013-09-02 | 2015-03-05 | Kumoh National Institute Of Technology | Field emission devices and methods of manufacturing gate electrodes thereof |
| US20150060758A1 (en) * | 2013-09-02 | 2015-03-05 | Kumoh National Institute of Technology - Academic Cooperation Foundation | Field emission devices and methods of manufacturing emitters thereof |
| CN104798170A (en) * | 2012-11-21 | 2015-07-22 | 加州理工学院 | Systems and methods for fabricating carbon nanotube-based vacuum electronic devices |
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