CN203134742U - Novel metal-based carbon nanotube field emission cold cathode - Google Patents
Novel metal-based carbon nanotube field emission cold cathode Download PDFInfo
- Publication number
- CN203134742U CN203134742U CN 201320127954 CN201320127954U CN203134742U CN 203134742 U CN203134742 U CN 203134742U CN 201320127954 CN201320127954 CN 201320127954 CN 201320127954 U CN201320127954 U CN 201320127954U CN 203134742 U CN203134742 U CN 203134742U
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- Prior art keywords
- carbon nanotube
- nanotube field
- cathode
- cold cathode
- field emission
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 28
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000002238 carbon nanotube film Substances 0.000 claims abstract description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The utility model discloses a novel carbon nanotube field emission cold cathode, which comprises a metal substrate. A stereoscopic microstructure array is arranged on the surface of the metal substrate. A carbon nanotube film layer is arranged on the stereoscopic microstructure array of the metal substrate. Compared with a conventional carbon nanotube field emission cold cathode, the novel carbon nanotube field emission cold cathode enables greater current emission capabilities and better emission stability.
Description
Technical field
The carbon nano-tube field emission that the utility model relates in the crossing domain of a kind of vacuum electronic technology and new material technology is cold, relates in particular to a kind of novel carbon nanotube field transmitting cold-cathode.
Background technology
To be solid issue the phenomenon of radio in the highfield effect for emission, and it is different in essence that an emission is transmitted in other forms of electronics.Thermionic emission, photoelectron emissions, secondary electron emission etc. are that the solid interior electronics obtains heat energy, photon energy and first electron energy, could overflow from the surface of solids after being excited to the energy state that is higher than surface potential barrier, emission then is that electronics penetrates potential barrier and overflows under the effect of highfield, thereby its emission that can reach is launched high several magnitude than other forms of electronics, at Field Emission Display, the High-Power Microwave technology, the strong current electron beam source, aspects such as novel sensor have good application prospects, so field emission cold-cathode is subjected to the great attention of various countries always.Particularly because the strong current electron beam source can be widely used in fields such as high-current accelerator, High-Power Microwave and electron beam irradiation, for scientific domains such as physics, chemistry, information, material, life, biology, medical science, national defence important application background is arranged.
In the evolution of lift-off technology on the scene, improving current emission ability and raising launcher reliability and stability is its two important aspects all the time.Therefore, field emission cold-cathode becomes in recent years hot research field owing to having the electron emissivity that muchs higher than conventional negative electrode.The researcher constantly seeks to improve the approach of cold cathode emitting performance, and it is the film-type cold cathode of emitter with thin-film materials such as carbon nano-tube, diamonds that the pointed cone array type field emission cold-cathode that cold cathode also therefore proposes from nineteen sixty-eight C. A. Spindt has developed into present.This class negative electrode has excellent field emission characteristic usually, and particularly because the number density at carbon nano-tube tip is bigger, thereby emission current is bigger.When but carbon nanotube density is excessive, screen effect will occur, thereby emission current is restricted with the trend that the density of carbon nano-tube increases.In addition, the growth substrate of traditional carbon nano-tube film is semiconductor silicon normally, when the emission current of carbon nano-tube film is excessive, contact resistance between carbon nano-tube and the substrate can cause huge Joule heat under big electric current, cause the damage of carbon nano-tube emission tip, thereby cause field-transmitting cathode inefficacy or impaired.
For addressing the above problem, we once introduced stereo microstructure and metal buffer layer in the silicon base of carbon nano-tube film growth, increase emitting area area on the unit cathode plane with micro-structural, reduce the current shielding effect, realize the raising of current emission ability, reduce contact resistance between carbon nano-tube-conductive substrates with the metal buffer layer, the thermal effect when reducing big current emission, thus improve the launch stability of negative electrode.
Yet metal material all significantly is being better than semi-conducting material aspect current delivery ability and the thermal property.Therefore, the present invention proposes a kind of having the metallic substrates carbon nanotubes grown film-type cold cathode of stereo microstructure, to realize better current emission ability and launch stability.
The utility model content
The purpose of this utility model provides a kind of novel carbon nanotube field transmitting cold-cathode, can realize current emission ability and the launch stability higher than existing carbon nanotube field transmitting cold-cathode.
The utility model adopts following technical proposals: a kind of novel carbon nanotube field transmitting cold-cathode, comprise metallic substrates, and metal substrate surface has the stereo microstructure array, on the stereo microstructure array of described metallic substrates the carbon nano-tube film layer is arranged.
Also have the Graphene transition zone on the stereo microstructure of described metallic substrates, described carbon nano-tube film layer is on the Graphene transition zone.
Described metallic substrates is copper substrate or the stainless steel-based end.
Described stereo microstructure array is the cone micro structure array.
The utility model provides a kind of novel carbon nanotube field transmitting cold-cathode, can realize current emission ability and the launch stability higher than existing carbon nanotube field transmitting cold-cathode; Wherein the stereochemical structure of metal surface can effectively improve the electron emissivity of negative electrode, and the current emission ability of carbon nano-tube cold cathode is improved; Metallic substrates, Graphene transition zone all have good heat conduction, electric conductivity, can reduce the contact resistance between carbon nano-tube and the substrate, thereby can improve launch stability.
Description of drawings
Fig. 1 is the structural representation of carbon nanotube field transmitting cold-cathode of the present utility model;
Fig. 2 is the perspective view of Fig. 1;
Fig. 3 is the structural representation with carbon nanotube field transmitting cold-cathode of Graphene transition zone of the present utility model.
Embodiment
As shown in Figure 1 and Figure 2, a kind of novel carbon nanotube field transmitting cold-cathode of the utility model comprises metallic substrates 1, and there is stereo microstructure array 2 on metallic substrates 1 surface, and 2 have carbon nano-tube film 3 on the stereo microstructure array of described metallic substrates; Described stereo microstructure array 2 is cone micro structure array or other micro structure arrays, and stereo microstructure is used for strengthening near the electric field strength of substrate surface, suppresses electric field shielding, to improve the cathode current emissivities.Described metallic substrates 1 is copper substrate or the stainless steel-based end, can also be other metallic substrates or alloy substrates, reduce contact resistance between carbon nano-tube-conductive substrates with metallic substrates, the thermal effect when reducing big current emission, thus improve the launch stability of negative electrode.The geometric scale on cone micro-structural base is made as a, the spacing on adjacent both sides, two cone micro-structural bottoms is made as b, and a and b size are decided according to the actual requirements, and (for example a is the 1-100 micron, b is the 0-100 micron), the material of cone micro-structural is identical with metallic substrates.
As shown in Figure 3, also have Graphene transition zone 4 on the stereo microstructure 2 of described metallic substrates 1, described carbon nano-tube film layer 3 is on Graphene transition zone 4.
Claims (4)
1. novel carbon nanotube field transmitting cold-cathode, it is characterized in that: comprise metallic substrates, metal substrate surface has the stereo microstructure array, on the stereo microstructure array of described metallic substrates the carbon nano-tube film layer is arranged.
2. novel carbon nanotube field transmitting cold-cathode according to claim 1 is characterized in that: also have the Graphene transition zone on the stereo microstructure of described metallic substrates, described carbon nano-tube film layer is on the Graphene transition zone.
3. novel carbon nanotube field transmitting cold-cathode according to claim 1, it is characterized in that: described metallic substrates is copper substrate or the stainless steel-based end.
4. novel carbon nanotube field transmitting cold-cathode according to claim 1, it is characterized in that: described stereo microstructure array is the cone micro structure array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320127954 CN203134742U (en) | 2013-03-20 | 2013-03-20 | Novel metal-based carbon nanotube field emission cold cathode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320127954 CN203134742U (en) | 2013-03-20 | 2013-03-20 | Novel metal-based carbon nanotube field emission cold cathode |
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| CN203134742U true CN203134742U (en) | 2013-08-14 |
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| CN 201320127954 Expired - Fee Related CN203134742U (en) | 2013-03-20 | 2013-03-20 | Novel metal-based carbon nanotube field emission cold cathode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742139A (en) * | 2016-03-31 | 2016-07-06 | 南京邮电大学 | Composite type field emission negative electrode emission source and preparation method therefor |
| CN111128635A (en) * | 2019-12-24 | 2020-05-08 | 中国工程物理研究院应用电子学研究所 | High-current repetition frequency carbon nanotube reinforced silver cold cathode and preparation method thereof |
| CN111128634A (en) * | 2019-12-10 | 2020-05-08 | 深圳先进技术研究院 | Graphene field emission cathode and preparation method thereof |
-
2013
- 2013-03-20 CN CN 201320127954 patent/CN203134742U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742139A (en) * | 2016-03-31 | 2016-07-06 | 南京邮电大学 | Composite type field emission negative electrode emission source and preparation method therefor |
| CN111128634A (en) * | 2019-12-10 | 2020-05-08 | 深圳先进技术研究院 | Graphene field emission cathode and preparation method thereof |
| CN111128635A (en) * | 2019-12-24 | 2020-05-08 | 中国工程物理研究院应用电子学研究所 | High-current repetition frequency carbon nanotube reinforced silver cold cathode and preparation method thereof |
| CN111128635B (en) * | 2019-12-24 | 2023-04-07 | 中国工程物理研究院应用电子学研究所 | High-current repetition frequency carbon nanotube reinforced silver cold cathode and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130814 Termination date: 20190320 |
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| CF01 | Termination of patent right due to non-payment of annual fee |