CN102339699B - Field emission triode structure based on graphene - Google Patents
Field emission triode structure based on graphene Download PDFInfo
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- CN102339699B CN102339699B CN201110293192.6A CN201110293192A CN102339699B CN 102339699 B CN102339699 B CN 102339699B CN 201110293192 A CN201110293192 A CN 201110293192A CN 102339699 B CN102339699 B CN 102339699B
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Abstract
The invention relates to a field emission triode structure based on graphene. The field emission triode structure comprises a cathode substrate (1), a support body (7) and an anode (8), wherein the support body (7) is positioned on the cathode substrate (1), the anode (8) is positioned on the support body (7) and parallel to the cathode substrate (1), and the cathode substrate (1), the support body (7) and the anode (8) constitute a cavity; and the field emission triode structure also comprises a cathode electrode (2) positioned in the enclosed cavity, a field emission body (3) for emitting electron beams (9), an insulated dielectric layer (4), a grid electrode (5) and the graphene (6). The field emission triode structure based on the graphene, provided by the invention, can realize high-current uniform emission, has the capability of effectively separating emission of field emission current from acceleration and focusing of electronic beams and can be used for a cold cathode X-ray source, a microwave amplifier tube and a field emission display.
Description
Technical field
The present invention is a kind of field emission tripolar construction, relates to device structure design and the material preparation of field electron transmitting device.
Background technology
Field electron transmitting device adopts cold cathode as electron emission source, has fast response time, power is low and reliability high.But field emission electron device also has a certain distance apart from the marketization at present, has some key technology bottlenecks.Wherein the design of three-stage structure and preparation are to affect a practical key factor of feds.
There is electron field emission and electron focusing/accelerate two physical processes in field emission electron device, only adopt two-level structure can not obtain outstanding electron beam characteristic, so three-stage structure is the core of field electron transmitting device.In conventional three-stage structure, metal electrode with fenestra is set conventionally as grid in field emitter the place ahead, on grid, apply a positive voltage, electronics is launched from field emitter, through the motion of grid fenestra anode, finally collected by anode, as shown in Figure 1.
In conventional field emission tripolar construction, because grid is the electrode with fenestra, at the edge of fenestra, part electric field is stronger, and the field emission current of therefore corresponding this part is larger, and very little at the central area of fenestra emission current.In order to guarantee enough emission currents, improve emission current uniformity, need to reduce membrane pore size as far as possible, membrane pore size is only 10 ~ 20 microns conventionally, this brings very large difficulty to processing preparation.
Due to the electron lens effect of gate electrode film pore electrod, the electronics sending from emitter is easy to be intercepted and captured by gate electrode, thereby has reduced the utilance of electronics.
Summary of the invention
technical problem:the object of the present invention is to provide a kind of field emission tripolar construction based on Graphene, it can launch x-ray source, a launched microwave pipe and long emission flat panel display for field.
technical scheme:field emission tripolar construction based on Graphene provided by the invention, this field emission tripolar construction comprises cathode base, be positioned at supporter on cathode base, be positioned on supporter and the anode parallel with cathode base, and cathode base, supporter and anode form the cavity of a sealing;
This transmitting tertiary structure also comprises cathode electrode, the field emitter for divergent bundle, insulating medium layer, gate electrode, the Graphene of the cavity that is positioned at described sealing; Wherein
On cathode base, be provided with the insulating medium layer with medium fenestra, cathode electrode is located on cathode base and is positioned at described medium fenestra, field emitter is located on cathode electrode, on insulating medium layer, be provided with the gate electrode with grid fenestra, Graphene is positioned on gate electrode and cover gate fenestra;
The electron beam that field emitter is launched, by the electric field action of gate electrode, through graphene layer, and anode is arrived in bombardment under the effect of anode electric field.
Preferably, medium fenestra is consistent with the width of grid fenestra.
Preferably, Graphene is individual layer or double-layer graphite alkene, and the thickness of Graphene (6) is less than 10nm.
Preferably, field emitter is any in the micro-point of metal, silicon tip, carbon nano-tube, nano zine oxide.
beneficial effect:the field emission tripolar construction based on Graphene that the present invention proposes is provided with graphene layer on grid fenestra, because graphene layer has good conductive characteristic, so the introducing of graphene layer can form uniform electric field before field emitter, avoid the field emission current problem of non-uniform that in common field emission tripolar construction, gate electrode film pore area comes, and can improve a transmitting total current; What the present invention proposed adopts individual layer, bilayer or few layer graphene layer cover gate fenestra based on Graphene field emission tripolar construction, because the thickness of graphene layer is less than 10nm, therefore electronics can be through the motion of graphene layer anode, Graphene is very little to the intercepting and capturing of electronics, has improved the effective rate of utilization of electronics; What the present invention proposed adopts individual layer, bilayer or few layer graphene layer cover gate fenestra based on Graphene field emission tripolar construction, cathodic region electric field and anode region electric field are isolated completely, the variation of anode voltage or other focus voltage can not affect the Electric Field Distribution in cathodic region, has avoided Electron Beam Focusing and the interactional problem of emission current in conventional field emission tripolar construction.
Accompanying drawing explanation
Fig. 1 is conventional field emission tripolar construction;
Fig. 2 be the present invention propose based on Graphene field emission tripolar construction;
Wherein have: cathode base 1, cathode electrode 2, field emitter 3, insulating medium layer 4, gate electrode 5, Graphene 6, supporter 7, anode 8.
Embodiment
The present invention will be described below with reference to accompanying drawings.
The present invention proposes a kind of field emission tripolar construction based on Graphene, and this field emission tripolar construction comprises cathode base, cathode electrode, the field emitter for divergent bundle, insulating medium layer, gate electrode, graphene layer, supporter and anode; Wherein:
On cathode base, be provided with cathode electrode, be provided with field emitter on cathode electrode, insulating medium layer is positioned on cathode base, is provided with gate electrode on insulating medium layer, is provided with graphene layer on gate electrode.Anode is positioned at cathode base top and is oppositely arranged with cathode base, and fixes by supporter and cathode base.The electron beam that field emitter is launched, through gate electrode modulation, bombards on anode through graphene layer.
Field emission body is the micro-point of metal, the micro-point of silicon, carbon nano-tube, nano zine oxide etc.
Graphene layer is individual layer or double-layer graphite alkene, and its thickness is less than 10nm.
For the technological difficulties of common field emission tripolar construction, the present invention proposes a kind of field emission tripolar construction based on Graphene.The field emission tripolar construction based on Graphene that the present invention proposes is adopted the graphene layer cover gate electrode fenestra below 10nm, forms uniform electric field before field emitter, has improved field transmitting uniformity, has increased emission current; Due to graphene layer cover gate electrode fenestra, between negative electrode-grid, between electric field and grid-intensifying ring, electric field is relatively independent, has avoided the impact on emission current such as accelerating field and focusing electric field; In based on Graphene field emission tripolar construction, field emission electron, through graphene layer outgoing, therefore can suitably increase gate electrode film hole diameter, reduces manufacture difficulty.
The field emission tripolar construction based on Graphene that the present invention proposes; On cathode base, be provided with cathode electrode, be provided with field emitter on cathode electrode, insulating medium layer is positioned on cathode base, and thickness of insulating layer is between 50nm to 100nm; On insulating medium layer, be provided with the gate electrode with fenestra, film hole diameter can expand to 500nm to 1000nm; On gate electrode, be provided with graphene layer, graphene layer thickness is less than 10nm.Anode is positioned at gate electrode top and parallel with cathode base, between grid and anode, also focusing electrode can be set.
The field emission tripolar construction based on Graphene that the present invention proposes adopts conventional field emitter, point as micro-in metal, the micro-point of silicon, carbon nano-tube, nano zine oxide etc.
Referring to Fig. 1-2, field emission tripolar construction based on Graphene provided by the invention, this three-stage structure comprises cathode base 1, cathode electrode 2, field emitter 3, insulating medium layer 4, gate electrode 5, Graphene 6, supporter 7, anode 8 and field emission electron bundle 9;
On cathode base 1, be provided with cathode electrode 2, on cathode electrode 2, be provided with field emitter 3, on cathode base, be provided with insulating medium layer 4, and on insulating medium layer, be provided with gate electrode 5, Graphene 6 is positioned on gate electrode, supporter 7 is positioned on cathode base, and anode 8 is by supporter placement parallel with cathode base.The electron beam 9 that field emitter 3 is launched, by the electric field action of gate electrode 5, through graphene layer 6, and anode 8 is arrived in bombardment under the effect of anode electric field.
Graphene 6 is individual layer or double-layer graphite alkene, to guarantee that electron beam passes graphene layer and collected by anode.
The method of preparation is: on cathode base, adopt the method for printing, sintering or plated film, photoetching to prepare cathode electrode; On cathode electrode, by methods such as printing, spraying, plated film, coated or autonomous growths, on cathode electrode, prepare field emission body; On cathode base, adopt method preparation prepared by the method for printing, sintering or plated film, photoetching with the dielectric layer of fenestra, fenestra position is corresponding with field emission body, thereby has avoided the destruction of dielectric layer to field emission body; On dielectric layer, adopt the method preparation of printing, sintering or plated film, photoetching with the gate electrode of fenestra, gate electrode fenestra is corresponding with dielectric layer fenestra; Adopt the method for chemical vapour deposition (CVD) at metallic film (preparing graphene layer on as copper film or nickel film), and adopt the methods such as etched the matrix method or heat release adhesive tape that graphene layer is transferred on gate electrode, graphene layer cover gate electrode fenestra.
Anode substrate is electrically-conductive backing plate, the assembling parallel with cathode base of this anode substrate.By cathode base and anode substrate sealing-in exhaust, form the vacuum working environment in device.Between anode substrate and gate electrode, some focusing electrodes can also be set, realize the focusing to e-book.
In field emission tripolar construction based on Graphene proposed by the invention, on gate electrode, apply different voltage, because graphene layer has good conductive characteristic, by gate electrode and graphene layer, can form in field emitter the place ahead a uniform longitudinal electric field, thereby control autoelectronic current.The electronics of launching from field emitter bombards the graphene layer covering grid fenestra, because the very thin thickness of graphene layer, so electronics can continue anode motion through graphene layer.Because graphene layer has been eliminated the divergent lens effect of grid fenestra, so what the present invention proposed can realize the even field emission of large electric current based on Graphene three-stage structure, and the focusing of electron beam is separated with emission process, thereby obtain better Electron Beam Focusing effect.
The field emission tripolar construction based on Graphene that the present invention proposes adopts individual layer, double-layer graphite alkene layer cover gate electrode fenestra, makes field emission electron can penetrate the motion of graphene layer anode; Adopt micro-point or nano material as field emitter.
The foregoing is only preferred embodiments of the present invention; protection scope of the present invention is not limited with above-mentioned execution mode; in every case the equivalence that those of ordinary skills do according to disclosed content is modified or is changed, and all should include in the protection range of recording in claims.
Claims (1)
1. the field emission tripolar construction based on Graphene, it is characterized in that: this field emission tripolar construction comprises cathode base (1), be positioned at supporter (7) on cathode base (1), be positioned at the upper and anode (8) parallel with cathode base (1) of supporter (7), and cathode base (1), supporter (7) and anode (8) form the cavity of a sealing;
This field emission tripolar construction also comprises cathode electrode (2), the field emitter (3) for divergent bundle (9), insulating medium layer (4), gate electrode (5), the Graphene (6) of the cavity that is positioned at described sealing; Wherein,
On cathode base (1), be provided with the insulating medium layer (4) with medium fenestra, cathode electrode (2) is located at cathode base (1) above and is positioned at described medium fenestra, field emitter (3) is located on cathode electrode (2), on insulating medium layer (4), be provided with the gate electrode (5) with grid fenestra, Graphene (6) is positioned at the upper also cover gate fenestra of gate electrode (5);
The electron beam (9) that field emitter (3) is launched, by the electric field action of gate electrode (5), through Graphene (6), and anode (8) is arrived in bombardment under the effect of anode electric field,
Medium fenestra is consistent with the width of grid fenestra,
Graphene (6) is individual layer or double-layer graphite alkene, and the thickness of Graphene (6) is less than 10nm,
Field emitter (3) is any in the micro-point of metal, silicon tip, carbon nano-tube, nano zine oxide.
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Cited By (2)
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| EP3144953A4 (en) * | 2014-05-13 | 2018-02-28 | Samsung Electronics Co., Ltd. | Electron emitting device using graphene and method for manufacturing same |
| EP3834223A4 (en) * | 2018-08-10 | 2022-12-14 | John Bennett | Low voltage electron transparent pellicle |
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| US9018861B2 (en) | 2011-12-29 | 2015-04-28 | Elwha Llc | Performance optimization of a field emission device |
| US9171690B2 (en) | 2011-12-29 | 2015-10-27 | Elwha Llc | Variable field emission device |
| CN104024147A (en) * | 2011-12-29 | 2014-09-03 | 埃尔瓦有限公司 | Electronic device graphene grid |
| US9349562B2 (en) | 2011-12-29 | 2016-05-24 | Elwha Llc | Field emission device with AC output |
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| CN103632903A (en) * | 2013-03-12 | 2014-03-12 | 东南大学 | Cold-cathode triode with electric field compensation |
| KR102040150B1 (en) * | 2013-09-02 | 2019-11-04 | 삼성전자주식회사 | Field emission element and method of manufacturing emitter of field emission element |
| KR20150026363A (en) * | 2013-09-02 | 2015-03-11 | 삼성전자주식회사 | Field emission element and method of manufacturing gate electrode of field emission element |
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| CN106783488B (en) * | 2016-12-09 | 2019-05-10 | 中国科学院深圳先进技术研究院 | CT system and its cold cathode X-ray tube |
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| JP3984548B2 (en) * | 2001-02-01 | 2007-10-03 | シャープ株式会社 | Electron emission device and field emission display |
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| CN101964292A (en) * | 2009-07-24 | 2011-02-02 | 清华大学 | Graphene sheet-carbon nanotube film composite structure and preparation method thereof |
| CN102034664A (en) * | 2009-09-30 | 2011-04-27 | 清华大学 | Field emission cathode structure and field emission display |
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| EP3144953A4 (en) * | 2014-05-13 | 2018-02-28 | Samsung Electronics Co., Ltd. | Electron emitting device using graphene and method for manufacturing same |
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