CN101819913A - Front gate type field emission cathode structure with edge enhancement effect and preparation method thereof - Google Patents
Front gate type field emission cathode structure with edge enhancement effect and preparation method thereof Download PDFInfo
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- CN101819913A CN101819913A CN 201010165816 CN201010165816A CN101819913A CN 101819913 A CN101819913 A CN 101819913A CN 201010165816 CN201010165816 CN 201010165816 CN 201010165816 A CN201010165816 A CN 201010165816A CN 101819913 A CN101819913 A CN 101819913A
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Abstract
The invention relates to a front gate type field emission cathode structure with edge enhancement effect and a preparation method thereof. In the structure of the invention, a strip cathode is arranged on a cathode substrate, a field emitter is arranged on the edge of the cathode, a strip insulating medium layer is arranged on the cathode with the field emitter, and a strip gate electrode is arranged on the insulating medium layer. Therefore, the emitter is transferred to the edge of the field emission cathode, thus fully utilizing the edge enhancement effect, enhancing the regulation of the gate, lowering the turn-on-field of the field emission cathode, increasing the field emission properties of the cathode of a front gate type field emission display device, simplifying the technological process and reducing the production cost.
Description
Technical field
The present invention relates to the minus plate of display of field-emitting flat panel, adopt a kind of front gate type field emission cathode structure with edge enhancement, strengthen the grid regulating and controlling effect, reduce field-transmitting cathode and open electric field, improve the cathodic field emitting performance of front gate type field emission display, simplify process, reduce manufacturing cost.
Background technology
Field-emitter display (FieldEmissionDisplay, FED) be a kind of novel flat-panel display device, have advantages such as light weight, power consumption are low, no subtense angle, its principle of luminosity is near cathode ray tube (CathodeRayTube, CRT), be a kind of display device of widely studying at present.
The front gate type field-emitter display is a kind of flat-panel display device with three-stage structure, assemble by positive plate and minus plate subtend, coming distance between holding anode plate and the minus plate by the supporter array between positive plate and the minus plate, it applies corresponding signal respectively by antianode, grid and negative electrode, make field-transmitting cathode emitting electrons bombardment phosphor anode luminous, wherein grid plays a part the emission of regulation and control cathode electronics.In the front gate type Field Emission Display, the emitting performance of field-transmitting cathode is the key factor that influences its image displaying quality, and cathode construction and field emission body layer are the key factors that influences the field-transmitting cathode emitting performance.
A kind of minus plate structure of typical front gate type field-emitter display as shown in Figure 1, this minus plate from bottom to top is followed successively by glass substrate 11, strip cathode electrode 12, insulating medium layer 13 and perpendicular to the strip gate electrode 14 of strip cathode electrode, wherein on insulating medium layer and the strip gate electrode opening is arranged all, it is interlayer hole 15, grid hole 16, and two openings are aimed at mutually, to expose the part cathode electrode, be that opening portion is on the crosspoint of strip cathode electrode and strip gate electrode, again the cathodic field emissive material is transferred on the exposed part cathode electrode, formed the minus plate of front gate type Field Emission Display.The minus plate of this typical front gate type Field Emission Display is made and has been adopted technologies such as a large amount of screen printing techniques, precision photolithography technology, lithographic technique, and gate openings size, gate openings position, difficulty is controlled in cathodic field emissive material position in actual fabrication bigger, complex process, the field emission performance of device are difficult to guarantee.
Summary of the invention
The purpose of this invention is to provide a kind of front gate type field emission cathode structure with edge enhancement, emitter is transferred to the edge of field-transmitting cathode electrode, make full use of edge enhancement, to strengthen the grid regulating and controlling effect, reduce field-transmitting cathode and open electric field, improve the field emission performance of front gate type field emission cathode.
Another object of the present invention provides a kind of preparation method with front gate type field emission cathode structure of edge enhancement, simplifies process, reduces manufacturing cost.
The present invention proposes a kind of front gate type field emission cathode structure with edge enhancement, front gate type field emission cathode structure with edge enhancement, comprise cathode base, it is characterized in that: described cathode base is provided with the cathode electrode of a plurality of strips at interval that are parallel to each other, the upper surface both sides of the edge of described cathode electrode are provided with field emission body, cathode electrode surface in the middle of the described field emission body is provided with the strip insulating medium layer, and described strip insulating medium layer is provided with the strip gate electrode.
The invention provides a kind of manufacture method, it is characterized in that may further comprise the steps with front gate type field emission cathode structure of edge enhancement:
(1), provides a cathode base;
(2), on described cathode base, utilize coating technique to form a plurality of cathode electrodes at interval that are parallel to each other in conjunction with photoetching technique;
(3), adopt silk screen print method to make a strip insulating medium layer in described cathode electrode surface, described strip insulating medium layer width is narrower than cathode electrode, is used for the fabricating yard emitter with the edge that exposes described cathode electrode;
(4), adopt silk screen print method to form a strip gate electrode at described strip dielectric laminar surface;
(5), adopt electrophoretic deposition to form field emission body in above-mentioned edge.
Purpose same as described above, the present invention also provides a kind of front gate type field emission cathode structure with edge enhancement, comprise cathode base, it is characterized in that: described cathode base is provided with the cathode electrode of strip, the upper surface both sides of the edge of described cathode electrode are provided with field emission body, described field emission body is put on the shelf and is provided with the strip insulating medium layer, and described strip insulating medium layer is provided with the strip gate electrode.
For realizing the said structure feature, the present invention also provides a kind of manufacture method with front gate type field emission cathode structure of edge enhancement in addition, it is characterized in that may further comprise the steps:
(1), provides a cathode base;
(2), on described cathode base, utilize coating technique to form a plurality of cathode electrodes at interval that are parallel to each other in conjunction with photoetching technique;
(3), adopt coating technique to plate one deck Fe, Ni or Co particle catalyst film in described cathode electrode upper surface both sides of the edge as catalyst;
(4), adopt silk screen print method to have the cathode electrode surface of catalyst granules to make the strip insulating medium layer vertical with cathode electrode in preparation;
(5), adopt silk screen print method to form a strip gate electrode at described strip dielectric laminar surface;
(6), adopt gas ions to strengthen the chemical vapour deposition technique field emission body of on the described catalyst film of step (3), growing.
According to front gate type field emission cathode structure with edge enhancement of the present invention and preparation method thereof, emitter is transferred to the edge of field-transmitting cathode electrode, utilize edge enhancement, strengthen the grid regulating and controlling effect, reduce field-transmitting cathode and open electric field, improve the cathodic field emitting performance of device, and simplify process, reduce manufacturing cost.
For the above-mentioned purpose that makes the present invention and other features, advantage are more clear, preferred embodiment cited below particularly, and conjunction with figs. are done following detailed description.
Description of drawings
Fig. 1 is the minus plate structural representation of known front gate type Field Emission Display.
Fig. 2 has the front gate type field emission cathode structure schematic diagram of edge enhancement for the present invention, and the direction of strip gate electrode and insulating medium layer is identical with the cathode electrode direction among the figure.
Fig. 3 has the front gate type field emission cathode structure side cross-sectional, view of edge enhancement for the present invention corresponding with Fig. 2.
Fig. 4 has the front gate type field emission cathode structure schematic diagram of edge enhancement for the present invention, and the direction of strip gate electrode and insulating medium layer is vertical with the cathode electrode direction among the figure.
Fig. 5 has the front gate type field emission cathode structure side cross-sectional, view of edge enhancement for the present invention corresponding with Fig. 4.
Fig. 6 has the front gate type field emission cathode structure front cross-sectional view of edge enhancement for the present invention corresponding with Fig. 4.
In the accompanying drawing, the main element description of symbols is as follows:
11,21,31: cathode base
12,22,32: the strip cathode electrode
23,33: field emission body
13,24,34: insulating medium layer
14,25,35: the strip gate electrode
15: interlayer hole
16: grid hole.
Embodiment
Embodiment one
Fig. 2, Fig. 3 are that the direction of strip gate electrode and insulating medium layer is identical with the cathode electrode direction among the figure according to the schematic diagram of the front gate type field emission cathode structure with edge enhancement of the embodiment of the invention.
Please refer to Fig. 2, Fig. 3, when making minus plate, at first provide cathode base 21, cathode base 21 materials for example are glass.With 10 inches panel technologies is example, then with 10 inches the common float glass panel bottom substrate as minus plate.Then, on the surface of cathode base 21, form the strip cathode electrode 22 of one deck patterning.In one embodiment, cathode electrode 22 be with coating technique in conjunction with the made film conductive electrode of photoetching technique, its thickness is 100-2000nm.This cathode electrode material comprises Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the multi-layer compound film of Ti single thin film or combination in any or alloy firm, the Sn that perhaps has conductivity, Zn, the oxide semiconductor thin-film of one or both and above combination thereof in the oxide of In, the first-selected Cr/Cu/Ag/Cu/Cr composite metal film of present embodiment is as cathode electrode 22, adopt direct current magnetron sputtering process on cathode base 21 surfaces that clean up sputtering sedimentation Cr film successively, the Cu film, the Ag film, the Cu film, the Cr film, form the Cr/Cu/Ag/Cu/Cr composite metal film, utilize photoetching technique to make the electrode mask layer then, adopt wet etching technique etching laminated film, be prepared into Cr/Cu/Ag/Cu/Cr composite metal film electrode, electrode width 100-800um promptly forms strip cathode electrode 22.
Then, adopt silk screen print method to make the strip insulating medium layer 24 parallel on cathode electrode 22 surfaces with cathode electrode 22, the THICKNESS CONTROL of strip insulating medium layer is at 2-10um, and width is narrower than cathode electrode, is used for fabricating yard emitter 23 to expose cathode electrode 22 edges.
Then, at the strip insulating medium layer 24 surface preparation strip gate electrode 25 identical with strip insulating medium layer direction, and the edge of strip gate electrode 25 edges and strip insulating medium layer 24 is very close, under the situation that guarantees gate electrode 25 and field emission body 23 or cathode electrode 22 not short circuits, make strip gate electrode 25 width slightly wide than strip insulating medium layer 24 width.Strip gate electrode 25 is the thick-film conductor electrodes that adopt the way of silk screen printing to make, and printing slurry material comprises the electrocondution slurry of a kind of in the oxide of the Sn, the Zn that contain Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, Ti conducting metal particles or have conductivity, In or two kinds and above combination thereof.In the present embodiment, adopt silk screen print method chromatography on strip insulating medium layer 24 to form strip gate electrode 25, its material is the ag paste electrode that contains the conductive silver paste particle, and its thickness is 5-15um, and electrode width is 90-800um.
At last, at fabricating yard, cathode electrode 22 edge emitter 23.The material of field emission body is a kind of or two kinds and above nano material, can be the nano material of zero dimension, one dimension or two dimension, and its particle or low-dimensional yardstick are 1-900nm, and the higher-dimension yardstick is 0.1-20um.In the present embodiment with carbon nano-tube (CNT) as field emission body, adopt electrophoretic deposition that the CNT nano material is transferred to the cathode electrode edge.At first carbon nano-tube and ethyl cellulose, terpinol, trace mineral supplement and isopropyl alcohol are made into and are uniformly dispersed and stable CNT electrophoresis liquid, afterwards, adopt direct voltage source or pulse voltage source at cathode electrode edge electrophoretic deposition carbon nanotube material, control the amount of the CNT material that is deposited on the cathode electrode by electrophoresis parameters such as control electrophoretic liquid concentration, electrophoretic voltage, electrophoretic current, electrophoresis times.After electrophoresis is finished, carry out sintering, to remove residual organic solvent, organic substance etc., make the good patterned field emission body 23 of tack, its thickness is 2-900nm, and width is 0.5-5um.Promptly finished the making of front gate type field emission cathode plate in this.
Front gate type field emission cathode plate according to the present embodiment made, adopt electrophoretic deposition to shift the CNT field emmision material, can deposit the CNT field emmision material at the upper surface and the side surface at cathode electrode edge, and it is slightly wide than insulating medium layer width to make the gate electrode width, and this all helps utilizing an edge enhancement of emission, strengthens the anticathode regulating and controlling effect of grid, reduce negative electrode and open field intensity, improve the field emission performance of field-transmitting cathode, and technology is simple, cost is low.
Embodiment two
Fig. 4, Fig. 5, Fig. 6 are that the direction of strip gate electrode and insulating medium layer is vertical with the cathode electrode direction among the figure according to the schematic diagram of the front gate type field emission cathode structure with edge enhancement of another embodiment of the present invention.
In the present embodiment, when making the front gate type field emission cathode plate, the technology of making insulating medium layer and gate electrode is identical with embodiment one, the technology and the embodiment one that make cathode electrode are similar, the main difference part is the making of field emission body, in the present embodiment using plasma is strengthened chemical vapour deposition technique (PECVD) and prepares field emission body at the cathode electrode edge.
Please refer to Fig. 4, Fig. 5, Fig. 6, cathode base 31 at first is provided, cathode base 31 materials for example are glass.With 10 inches panel technologies is example, then with 10 inches the common float glass panel bottom substrate as minus plate.Then, on the surface of cathode base 31, form the strip cathode electrode 32 of one deck patterning.In the present embodiment, strip cathode electrode 32 be with coating technique in conjunction with the made film conductive electrode of photoetching technique, its thickness is 100-900nm.Film conductive electrode material comprises Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, the multi-layer compound film of Ti single thin film or combination in any or alloy firm, the Sn that perhaps has conductivity, Zn, the oxide semiconductor thin-film of one or both and above combination thereof in the oxide of In, present embodiment selects the Cr/Cu/Cr composite metal film as strip cathode electrode 32, adopt direct current magnetron sputtering process on cathode base 31 surfaces that clean up sputtering sedimentation Cr film successively, the Cu film, the Cr film, form the Cr/Cu/Cr composite metal film, utilize photoetching technique to make the electrode mask layer then, adopt wet etching technique etching laminated film, be prepared into Cr/Cu/Cr composite metal film electrode, electrode width 100-800um promptly forms strip cathode electrode 32.
Afterwards, adopt coating technique to plate one deck catalyst film,, provide necessary catalyst for preparing field emission body 33 at strip cathode electrode 32 edges in the following technology as Fe, Ni, Co etc. at strip cathode electrode 32 edges.In the present embodiment,, adopt magnetron sputtering method directly to plate the layer of Ni particle as catalyst at cathode electrode 32 edges with the method for mask.
Then, adopt silk screen print method to have strip cathode electrode 32 surfaces of Ni catalyst granules to make the strip insulating medium layer 34 vertical with strip cathode electrode 32 in preparation, the THICKNESS CONTROL of dielectric layer is at 2-10um.
Then, at the strip insulating medium layer 34 surface preparation strip gate electrode 35 identical with the dielectric layer direction, and the edge of strip gate electrode 35 edges and strip insulating medium layer 34 is very close, under the situation that guarantees strip gate electrode 35 and field emission body 33 or the 32 not short circuits of strip cathode electrode, make strip gate electrode 35 width slightly wide than insulating medium layer 24 width.Strip gate electrode 35 is the thick-film conductor electrodes that adopt the way of silk screen printing to make, and printing slurry material comprises the electrocondution slurry of a kind of in the oxide of the Sn, the Zn that contain Cr, Cu, Ag, Fe, Al, Ni, Au, Pt, Ti conducting metal particles or have conductivity, In or two kinds and above combination thereof.In the present embodiment, adopt silk screen print method chromatography on strip insulating medium layer 34 to form the gate electrode 35 of strip, its material is the ag paste electrode that contains the conductive silver paste particle, and its thickness is 5-15um, and electrode width is 90-800um.
At last, at fabricating yard, strip cathode electrode 32 edge emitter 33.The material of field emission body is a kind of or two kinds and above nano material, can be the nano material of zero dimension, one dimension or two dimension, and its particle or low-dimensional yardstick are 1-900nm, and the higher-dimension yardstick is 0.1-20um.In the present embodiment with carbon nano-tube (CNT) as field emission body, using plasma strengthens chemical vapour deposition technique (PECVD) in strip cathode electrode 32 edge direct growth CNT nano materials.The minus plate that is coated with the Ni catalyst film is put in the reative cell of PECVD system, vacuumized and make the vacuum degree of reative cell be less than 10
-4Pa feeds O
2Light plasma with cleaning systems, the cathode substrate temperature is 300-600 ℃, feeds hydrocarbon or hydrocarbon as carbon-source gas, as CH
4, C
2H
4, C
2H
2, CO, CO
2Deng, while proportioning certain amount of H
2Or NH
3As assist gas, regulate suitable carbon-source gas flow and substrate bias voltage, the control growing time is at the CNT of the direct low-temperature epitaxy orientation in strip cathode electrode 32 edges.Promptly finished the making of front gate type field emission cathode plate in this.
According to front gate type field emission cathode structure with edge enhancement of the present invention and preparation method thereof, can make full use of an edge enhancement of emission, strengthen the grid regulating and controlling effect, reduce field-transmitting cathode and open electric field, improve the cathodic field emitting performance of device, and have the advantage that technology is simpler, manufacturing cost is lower.
Though the present invention is described in detail explanation with preferred embodiment, be not in order to limit the present invention.Every equivalent transformation or modification of doing according to claim of the present invention all is included in the claim of the present invention.
Claims (10)
1. front gate type field emission cathode structure with edge enhancement, comprise cathode base, it is characterized in that: described cathode base is provided with the cathode electrode of a plurality of strips at interval that are parallel to each other, the upper surface both sides of the edge of described cathode electrode are provided with field emission body, cathode electrode surface in the middle of the described field emission body is provided with the strip insulating medium layer, and described strip insulating medium layer is provided with the strip gate electrode.
2. the front gate type field emission cathode structure with edge enhancement according to claim 1 is characterized in that: described cathode electrode thickness is 100 ~ 2000nm.
3. the front gate type field emission cathode structure with edge enhancement according to claim 1 is characterized in that: the width of described field emission body is 0.1 ~ 50um.
4. according to claim 1 or 3 described front gate type field emission cathode structures with edge enhancement; it is characterized in that: described field emission body adopts nano material; this nano material is zero dimension, one dimension or two dimension, and its particle or low-dimensional yardstick are 1 ~ 900nm, and high yardstick is 0.1 ~ 20um.
5. manufacture method with front gate type field emission cathode structure of edge enhancement is characterized in that may further comprise the steps:
(1), provides a cathode base;
(2), on described cathode base, utilize coating technique to form a plurality of cathode electrodes at interval that are parallel to each other in conjunction with photoetching technique;
(3), adopt silk screen print method to make a strip insulating medium layer in described cathode electrode surface, described strip insulating medium layer width is narrower than cathode electrode, is used for the fabricating yard emitter with the edge that exposes described cathode electrode;
(4), adopt silk screen print method to form a strip gate electrode at described strip dielectric laminar surface;
(5), adopt electrophoretic deposition to form field emission body in above-mentioned edge.
6. the manufacture method with front gate type field emission cathode structure of edge enhancement according to claim 5; it is characterized in that: described field emission body adopts nano material; this nano material is zero dimension, one dimension or two dimension; its particle or low-dimensional yardstick are 1 ~ 900nm, and high yardstick is 0.1 ~ 20um.
7. the manufacture method with front gate type field emission cathode structure of edge enhancement according to claim 5 is characterized in that: described electrophoretic deposition comprises:
(1), carbon nano-tube and ethyl cellulose, terpinol, trace mineral supplement and isopropyl alcohol are made into are uniformly dispersed and stable CNT electrophoresis liquid;
(2), adopt direct voltage source or pulse voltage source at cathode electrode edge electrophoretic deposition carbon nanotube material, control the amount of the CNT material that is deposited on the cathode electrode by control electrophoretic liquid concentration, electrophoretic voltage, electrophoretic current, these electrophoresis parameters of electrophoresis time;
(3), carry out sintering, to remove residual organic solvent, organic substance etc., make the good patterned field emission body of tack.
8. front gate type field emission cathode structure with edge enhancement, comprise cathode base, it is characterized in that: described cathode base is provided with the cathode electrode of strip, the upper surface both sides of the edge of described cathode electrode are provided with field emission body, described field emission body is put on the shelf and is provided with the strip insulating medium layer, and described strip insulating medium layer is provided with the strip gate electrode.
9. manufacture method with front gate type field emission cathode structure of edge enhancement is characterized in that may further comprise the steps:
(1), provides a cathode base;
(2), on described cathode base, utilize coating technique to form a plurality of cathode electrodes at interval that are parallel to each other in conjunction with photoetching technique;
(3), adopt coating technique to plate one deck Fe, Ni or Co particle catalyst film in described cathode electrode upper surface both sides of the edge as catalyst;
(4), adopt silk screen print method to have the cathode electrode surface of catalyst granules to make the strip insulating medium layer vertical with cathode electrode in preparation;
(5), adopt silk screen print method to form a strip gate electrode at described strip dielectric laminar surface;
(6), adopt gas ions to strengthen the chemical vapour deposition technique field emission body of on the described catalyst film of step (3), growing.
10. the manufacture method with front gate type field emission cathode structure of edge enhancement according to claim 9, it is characterized in that, described gas ions strengthens chemical vapour deposition technique and comprises: the minus plate that will be coated with Fe, Ni or Co catalyst film is put in the reative cell of PECVD system, vacuumizes to make the vacuum degree of reative cell be less than 10
-4Pa feeds O
2Light plasma with cleaning systems, the cathode substrate temperature is 300-600 ℃, feeds hydrocarbon or hydrocarbon as carbon-source gas, simultaneously the proportioning certain amount of H
2Or NH
3As assist gas, regulate suitable carbon-source gas flow and substrate bias voltage, the control growing time is in the carbon nano-tube of the direct low-temperature epitaxy orientation in cathode electrode edge.
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| CN 201010165816 CN101819913A (en) | 2010-05-08 | 2010-05-08 | Front gate type field emission cathode structure with edge enhancement effect and preparation method thereof |
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| CN107316612A (en) * | 2017-07-11 | 2017-11-03 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED display panel and OLED display |
| CN108290735A (en) * | 2015-10-08 | 2018-07-17 | 阿卡伦塞以色列有限公司 | A kind of cold plasma ozone generator |
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| CN1855353A (en) * | 2005-04-29 | 2006-11-01 | 财团法人工业技术研究院 | Three-electrode field transmitting display device |
| CN1750226A (en) * | 2005-10-18 | 2006-03-22 | 中原工学院 | Plane light emitting display of edge emission structure and its producing process |
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| CN108290735A (en) * | 2015-10-08 | 2018-07-17 | 阿卡伦塞以色列有限公司 | A kind of cold plasma ozone generator |
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Application publication date: 20100901 |