CN102318090B - 封装过的带有焊接停止层的光电子半导体装置以及相应方法 - Google Patents
封装过的带有焊接停止层的光电子半导体装置以及相应方法 Download PDFInfo
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Abstract
设计了一种带有至少一个导体装置(2)和半导体元件(3)的半导体装置,该半导体元件固定在导体装置上并且导电连接。焊接停止层(5)和封装材料(6)施加在导体装置(2)上,其中封装材料(6)遮盖半导体元件(3)并且至少部分地靠置在焊接停止层(5)上。此外,设计了相应的制造方法。
Description
本发明涉及一种半导体装置以及一种用于制造半导体装置的方法。
导体框架(所谓的引线框架)常用于制造半导体装置。引线框架由金属的板状半成品构成,在该半成品中通过冲制或者刻蚀而部分预制各个彼此分离的导体区段,这些导体区段至少部分地与引线框架的外部区域连接。因此,术语“引线框架”、“导体框架”得出:在随后的时刻,各个导体区段通过冲制、刻蚀或者锯割从框架中分割出来。作为材料通常使用铜板,其例如设置有镍层或者金层,以便能够实现可靠的焊接接触。
在制造已知的半导体装置的情况下,常将至少一个半导体芯片以机械方式和以电方式与所设置的电导体区段连接。随后,以封装材料封装芯片和每个导体区段的至少一部分。电导体区段于是至少部分地从封装材料中伸出,以便将这些导体区段例如设置在板上或者其他接触装置上。这种布置通常借助焊接方法实现。因为封装材料常以小的粘附性靠置在导体区段的表面上,所以形成裂缝,在将半导体装置焊接在电路板上时焊剂和焊料通过该裂缝借助毛细力渗入到半导体装置中。在此,焊锡到达导体框架的表面上,在那里其会导致损伤。如果实现对设置在封装部中的接合线的所不希望的接触,则这会由于变脆导致损害。尤其在将硅树脂用作封装材料时存在该危险。
现在,本发明的任务是:提出一种用于制造半导体装置的方法和一种半导体装置,其中焊锡渗入到封装部中的可能性被可靠地阻止。
根据本发明,该任务通过在并列权利要求中提出的措施来解决,其中进一步的有利扩展方案在从属权利要求中说明。通过将焊接停止层设置在导体装置上,在导体装置上至少一个半导体元件被固定并且导电连接,以及通过封装材料将半导体元件遮盖为使得封装材料至少部分地在焊接停止层上而阻止焊锡在封装材料紧贴到焊接停止层的区域中进入到封装材料中,因为封装材料被焊接停止层挡住。
通过在导体装置中设置凹处能够实现:制造平的紧密封装的半导体装置。
如果将焊接停止漆设计为焊接停止层,则得到在封装材料和导体装置之间的较强的粘附性。随后,在参考附图借助实施例阐述了本发明。
根据半导体装置的至少一个实施形式,导体装置具有彼此对置的上侧和下侧。上侧和下侧分别局部地被焊接停止层覆盖。焊接停止层于是在导体装置的两个主侧上延伸。一个或多个半导体元件优选地仅仅安置在上侧上。
根据半导体装置的至少一个实施形式,导体装置多件式地实施。例如,导体装置具有至少两个独立的区段,其不通过导体装置的相关联的材料来连接。区段之间的机械连接例如通过尤其透射辐射的封装材料实现,该封装材料覆盖半导体元件和导体装置的至少一部分。在电学上,导体装置的区段优选地彼此绝缘,除了通过半导体元件本身的电连接之外。
根据半导体装置的至少一个实施形式,焊接停止层是唯一的、连续地彼此连接的层、尤其相对于导体装置的区段中的每个。
根据半导体装置的至少一个实施形式,导体装置具有连接面。连接面设置用于半导体元件的安置和电接触以及用于半导体装置的外部的电接触和/或机械接触。用于外部接触的连接面以及用于接触半导体元件的连接面优选地位于导体装置的彼此对置的侧上。
根据半导体装置的至少一个实施形式,连接面中的至少一个、优选地所有连接面被焊接停止层完全镶边。换言之,尤其围绕每个连接面在导体装置的表面上存在焊接停止层的材料的封闭的路径。封闭的路径或者镶边部完全地位于导体装置的主侧上。同样可能的是,封闭的路径围绕连接面或者连接面之一在导体装置的上侧和下侧上延伸,连接面于是可以伸到端面上。
根据半导体装置的至少一个实施形式,在导体装置的下侧上的连接面不被封装材料覆盖。换言之,形成连接面的材料并不与封装材料物理接触。优选地,在垂直于连接面的方向上在下侧上的连接面之后未设置封装材料的材料。与此相反,在上侧上的连接面可以完全被封装材料覆盖。
根据半导体装置的至少一个实施形式,焊接停止层延伸离开导体装置的端面,其中焊接停止层(在横截面中来看)局部地U形地构建。在此,端面是导体装置的将上侧与下侧连接的表面。换言之,端面部分地或者完全地被焊接停止层覆盖或者以焊接停止层来涂覆。
此外,提出了一种用于制造半导体装置的方法。借助该方法尤其制造如结合一个或多个所提及的实施形式所说明的半导体装置。因此,用于方法的特征也针对半导体装置公开并且反之亦然。
根据方法的至少一个实施形式,连接区域设置有至少一个金属层。该层优选地在施加焊接停止层之后施加。在施加金属层时,焊接停止层可以用作掩膜。尤其,焊接停止层是电绝缘的并且金属层例如以电镀方式来施加,其中焊接停止层在施加金属层期间保持未被涂覆。
根据方法的至少一个实施形式,焊接停止层以结构化方式施加在导电装置上并且接着硬化和/或干燥。例如焊接停止层借助喷射、印刷、丝网印刷、帘式浇注(Vorhangiessen)或者借助辊涂(Walzenauftragung)来施加。
根据方法的至少一个实施形式,焊接停止层在硬化和/或干燥之后完全保留在导体装置上。完全保留在导体装置上并不排除:焊接停止层的部分被去除,这些部分位于导体装置的区域之上,这些区域例如在从导线框架或者从导体框架复合结构中分割导体装置的过程(例如通过锯割)中同样被去除。
相同的、类似的和作用相同的元件在附图中设置有相同的附图标记。附图和在附图中示出的元件的相互的大小关系不应视为合乎比例的。更确切而言,为了更好的可示出性和/为为了更好的理解,各个元件可以被夸大地示出。
其中:
图1、2、4至7示出了在此描述的半导体装置的实施例的示意图,以及
图3和8示出了引线框架。
图1在横截面中示出了半导体装置1。在此,设置有导体装置2,其由三个导体区段2a、2b和2c构成。各个区段2a、2b、2c通过缝隙8分离。在导体区段2b上,半导体元件3、例如发光二极管(也以LED而公知)在连接区域9中固定在导体装置2的上侧20上并且导电连接(例如借助焊接)。通过接合线4,发光二极管3与导体区段2a导电连接。导体区段2b、2c可以单件式地构建。
此外,焊接停止部5作为焊接停止层涂覆在导体装置2上,并且封装材料6将二极管3连同接合线4的结合连接部封装,其中封装材料6涂覆为使得封装材料6在半导体装置1的边缘上靠置在焊接停止层5上。由此,能够实现封装材料6的保持力的提高。
为了可以将导体结构2良好地焊接到板接触部(在此未示出)上,将尤其相继地以镍、钯和金涂覆的铜板,其用作导体装置2的原材料。同样,借助银的点状涂覆(所谓的Ag点镀)是可能的。
尤其在将发光二极管用作要求透明、清澈的封装部的半导体元件3时,将硅树脂、环氧化物、或者硅树脂-环氧化物-混合物用作封装材料6。为了使该封装材料6在导体装置2上更好地保持,封装部(如在图1中所示那样)环绕导体装置2的端面28地从导体装置2的上侧20环绕地引导到导体装置2的与半导体元件3对置的下侧25上,如同焊接停止层5。然而,缝隙8被焊接停止层5完全覆盖,使得没有封装材料6的材料渗透到缝隙8中。
因为如图1所示那样,焊接停止层5也涂覆在导体装置2的背离半导体元件3的下侧25上,所以得到与封装材料6的足够大的粘附性,使得在封装材料6的边缘上不形成在封装材料6和导体装置2和/或焊接停止层之间的开口。在焊接停止层5上的封装材料6的以每个面单元计算的附着力优选地超过直接在导体装置2上的封装材料6的附着力至少1.5倍、尤其至少2倍。
为了可以将如在图1中那样封装的导体装置2与板端子焊接,导体装置3具有在垂直于导体装置3的主延伸方向的方向上突出于封装材料6之上的、在下侧25上的连接面9。这些连接面9通过冷变形形成,尤其在导体装置2的上侧20上形成与连接面9对置的凹处7。然而,该结构化也可以借助刻蚀进行。与在图1中所示不同,同样可能的是:封装材料6和连接面9在垂直于导体装置3的主延伸方向的方向上和/或在横向上平坦或者彼此齐平地结束。
在图2中示出了另一实施例,其中半导体装置1具有平面的导体装置2。在该实施例中,封装材料6仅仅单侧地涂覆,使得上侧20的仅仅一部分被封装材料6覆盖并且使得下侧25没有或者基本上没有封装材料6。例如,下侧25的少于25%或者少于10%被封装材料6或者焊接停止层5覆盖。
导体装置2的部分在横向方向上在导体装置2的边缘上突出于封装材料6,以形成连接面9。在所示的实施例中,封装材料6渗入到开口12中,使得封装材料6固定在导体装置2上。可能的是:封装材料6完全渗透分别在导体区段2a、2b中成形的缝隙8和/或开口12并且覆盖下侧25的一部分。
在图3中示出了导体框架复合结构10,其中导体装置2例如通过沿着分离线11冲制或者锯割从导体框架复合结构10中脱离。在图1中所示的横截面装置沿着切割线A/A形成,其中在图3中仅仅示出了没有半导体器件并且没有封装材料的导体框架复合结构10。如果追踪分离线11,则看到的是:导体区段2a和2b例如通过沿着分离线11冲制出来借助缝隙8来彼此绝缘。然而,区域2c和2b通过该分离进一步经由各区段彼此连接。
现在,描述在图1和2中所示的半导体装置1的制造方法的一个示例。提供了如其在根据图3的视图中所示那样的导体框架2。在此,首先从板材料中将所示的缝隙8和开口12冲制出来或者刻蚀出来。板材料包括铜或者由铜构成,并且优选地以镍、钯和金来涂覆。该涂覆可以在导体框架复合结构10的形状的构建之前或者之后进行。此外,根据图1的区域7和9通过冷变形或者通过刻蚀构建。
接下来,在阴影区域中涂覆焊接停止漆并且于是焊接停止层5成形。可替选地,焊接停止层5也可以在涂覆导体框架复合结构10之前实现。于是,焊接停止层5的材料与导体框架复合结构10的材料例如铜直接接触。焊接停止层5对铜的附着比对涂层、尤其比对金的附着高。尤其当导体框架复合结构10具有底切时,焊接停止层5从导体框架复合结构10的两侧起、例如通过两侧的丝网印刷方法来施加。
随后,半导体元件3在导体区段2b中固定在凹处7中并且与区段2b导电连接。然后,借助接合线4在导体区段2a中在半导体元件3和凹处7之间构建接合连接。最后,涂覆封装材料6。如果随后延着分离线11通过分离、锯割、刻蚀或者切割将半导体装置1从在图3中所示的导体框架复合结构10中分离出来,则导体区段2a和2c不分开,因为它们通过封装材料6保持在一起。
如果然后在图1中所示的半导体装置1以连接面9放置和焊接在未示出的板上,则焊接停止漆5阻止:焊锡渗入到封装材料下、尤其到封装材料6和导体框架2之间。当不存在焊接停止漆5时,这种渗入会通过毛细力增强。
通过使用焊接停止漆通过如下方式给出另一有利的结果:当封装材料6是清澈透明的时,用于焊接停止漆的确定的颜色的选择于是也确定半导体装置1的颜色设计。通过黑色的焊接停止层5,可提高例如由半导体装置1所发射的辐射的对比度。借助白色的焊接停止层5,可以提高从封装材料6中出来的辐射的耦合输出效率。焊接停止层5也可以构建为透明的或者漫散射的。
在图4中所示的装置涉及根据图2的实施例的另一扩展方案。在此,半导体元件3也设置在导体区段2b上并且通过接合线4与导体区段2a导电连接。与导体区段2c一起,共同形成导体装置2的三个区段被封装材料6几乎完全围绕。只有连接面9如在图4中所示那样是暴露的。可选地,在横向上形成导体装置2的边界的端面28也可以没有封装材料6,这例如由于分割处理而造成。
在此,优选地在导体装置2的对于半导体元件3的接触或者对于外部接触所不需要的所有面上涂覆焊接停止层5,该焊接停止层负责封装材料6在导体装置2上的良好附着并且阻止焊剂渗入到封装材料6和导体装置2之间。可选地,横向位于外部的端面28可以不被焊接停止层5覆盖,不同于图4中所示。
在图5中示出了另一实施例。在该实施例中,导体装置2具有支承体13并且在两侧具有连接面9和15。内连接面15提供了用于半导体元件3(在此例如也为LED)的接触垫和在其上固定有来自半导体元件3的接合线4的接合垫。通过穿通连接部14,内连接面15与连接面9导电连接。
基本上可以得出:在该实施例中由塑料材料构成的支承体13在端面28上阻止在焊接连接面9时焊接材料的爬行上来(Heraufkriechen)。然而,所描述的根据该实施例的导体装置2在分割时被锯割。在锯割时会发生:连接面9和/或15的导电材料到达端面28,这又产生如下危险:焊接材料到达封装材料6。因此,在该实施例中也有利的是:如所示那样,焊接停止层尤其涂覆在导体装置的端面28上。此外,在该实施例中焊接停止层5也负责封装材料6在内连接面15上的更好的保持。
该实施例的制造与如参考根据图1的实施例描述那样的制造方法类似地来进行。在图6C和图6D中分别以透视方式示出了半导体装置的另一实施例的示意性俯视图和示意性仰视图。在图6A和6B中以透视方式示出了作为基础的引线框架或者作为基础的导体框架复合结构10的俯视图和仰视图。
在图6中未示出导体装置2的各个导体区段,与封装材料同样少。在导体装置2中的每个的上侧20上有连接面9中的两个,在下侧25上分别有连接面9中的三个。连接面9中的每个完全被焊接停止层5围住。在上侧20上,在共同的第一连接面9上安置有半导体元件3和防止由于静电充电造成的损伤的保护部件17。保护部件17同样可以是发光二极管。
借助在上侧20上的第二连接面9,通过接合线4建立至半导体元件3或者至保护部件17的电连接。接合线4例如通过摩擦焊接方法来固定。通过以焊接停止层5包围连接面9,接合线4持久性地受保护而避免与未示出的焊锡的物理接触,半导体装置1借助焊锡通过下侧25例如固定在未绘出的电路板上。由此,也可以阻止接合线4的变脆或者断裂。
在半导体装置1的另一实施例中,参见图7中的剖视图,导体区段2a、2c与导体区段2a以机械方式通过封装材料6a、6b、6c的多个层连接。封装材料6a、6b、6c基于或者包含例如硅树脂和尤其一种或多种混合物,这些混合物具有如下形式:扩散剂、用于波长转换的转换剂、过滤剂、用于提高导热能力或用于适配热膨胀系数的介质和/或硬化剂。例如,直接围绕和环绕半导体元件3的封装材料6a掺杂有转换剂,连续的封装材料6b掺杂有用于吸收或者反射紫外辐射的介质并且层状的封装材料6c掺杂有用于提高例如耐刮擦性的硬化剂。同样,封装材料6a、6b、6c可以基于彼此不同的材料。封装材料6a在横向方向上基本上限制到连接面9上,封装材料6b、6c覆盖整个上侧20。
在图8A中示出了引线框架的另一实施例的俯视图并且在图8B中示出了引线框架的该实施例的仰视图。在上侧20上构建有多个连接面9b,其中在上侧20上的连接面9b中的多个分别与唯一的、对应的在下侧25上的连接面9b组合。尤其,为了标记在例如在此未绘出的电路板上的安装方向,连接面9a在下侧25上具有例如有色地构建的标记,该标记具有凹到连接面9a中的焊接停止层5的凹进部95的形式,也参见图6D。分离线11分别横跨通过引线框架的多个穿通部例如开口。
本发明不通过根据实施例的描述而限于其。更确切而言,本发明包括任意新特征以及特征的任意组合,这尤其包含在权利要求中的特征的任意组合,即使这些特征或者这些组合本身未在权利要求或者实施例中明确说明。
本专利申请要求德国专利申请10 2009 008 738.9的优先权,其公开内容通过引用结合于此。
Claims (11)
1.一种半导体装置(1),其具有:
至少一个由金属的、板状的半成品构成的导体装置(2),所述导体装置具有上侧(20)和与上侧(20)对置的下侧(25),其中所述导体装置(2)具有至少两个分别彼此电绝缘的区段(2a,2b,2c),
至少一个焊接停止层(5),所述焊接停止层将上侧(20)和下侧(25)分别部分覆盖,其中至少所述区段的未被所述焊接停止层(5)覆盖的部分区域在所述导体装置(2)的上侧(20)和下侧(25)上形成电的连接面(9),
光电子半导体元件(3),该光电子半导体元件在所述导体装置(2)的上侧(20)上固定在连接面(9)中的至少一个上并且与所述连接面(9)中的所述至少一个导电连接,其中半导体元件(3)安置在区段之一(2b)上并且通过导电连接元件(4)与所述区段中的至少另一个(2a,2c)导电连接,
以及
透射辐射的封装材料(6),该封装材料至少施加在所述导体装置(2)的上侧(20)上,其中封装材料(6)遮盖半导体元件(3)并且至少部分地紧贴在所述焊接停止层(5)上并且所述区段(2a,2b,2c)之间的机械连接通过所述封装材料(6)实现,其中连接面(9)分别完全被所述焊接停止层(5)镶边,
其中所述焊接停止层(5)在横截面中U形地构建,使得所述焊接停止层(5)延伸离开所述导体装置(2)的横向位于内部的端面(28)并且作为连续的层从上侧(20)伸至下侧(25),即横向位于内部的端面(28)完全被所述焊接停止层(5)覆盖并且横向位于外部的端面(28)未被所述焊接停止层(5)覆盖。
2.根据权利要求1所述的半导体装置(1),其中所述导体装置(2)具有至少一个凹处(7),半导体元件(3)固定在所述凹处(7)中。
3.根据权利要求1或2所述的半导体装置(1),其中下侧(25)的连接面(9)不被封装材料(6)覆盖。
4.根据权利要求1或2所述的半导体装置(1),其中所述至少两个区段(2a,2b,2c)借助裂缝(8)彼此分离。
5.根据权利要求1或2所述的半导体装置(1),其中所述焊接停止层(5)由焊接停止漆构成。
6.根据权利要求1或2所述的半导体装置(1),其在上侧(20)和在下侧(25)上均具有连接面(9)中的至少两个。
7.根据权利要求1或2所述的半导体装置,其中连接元件(4)是接合线(4)。
8.根据权利要求1或2所述的半导体装置(1),其中所述至少一个半导体元件(3)是发光二极管、激光二极管或者光电二极管。
9.一种用于制造半导体装置(1)的方法,其中
提供具有上侧(20)和与上侧(20)对置的下侧(25)的导体装置(2),
在导体装置(2)的上侧(20)和下侧(25)上至少部分地涂覆有焊接停止层(5),其中至少所述区段的未被焊接停止层(5)覆盖的部分区域在导体装置(2)的上侧(20)和下侧(25)上形成电的连接面(9),
光电子半导体元件(3)在导体装置(2)的上侧(20)上设置在连接面(9)中的一个上并且与所述连接面(9)中的所述一个导电连接,
借助封装材料(6)封装在导体装置(2)上的半导体元件(3),使得封装材料(6)至少部分地与焊接停止层(5)机械接触,其中连接面(9)分别完全被焊接停止层(5)镶边,以及
将导体装置(2)作为制成板状的金属半成品的部分来提供,并且在将导体装置(2)从半成品中分离出来之前涂覆焊接停止层(5),
其中所述焊接停止层(5)在横截面中U形地构建,使得所述焊接停止层(5)延伸离开所述导体装置(2)的横向位于内部的端面(28)并且作为连续的层从上侧(20)伸至下侧(25),即横向位于内部的端面(28)完全被所述焊接停止层(5)覆盖并且横向位于外部的端面(28)未被所述焊接停止层(5)覆盖。
10.根据权利要求9所述的方法,其中在涂覆焊接停止层(5)之后,分别为连接面(9)设置至少一个金属层(16),其中上侧(20)和下侧(25)的被焊接停止层(5)覆盖的区域保持未被所述金属层(16)覆盖。
11.根据权利要求9或10所述的方法,其中焊接停止层(5)以结构化方式来施加并且随后硬化和/或干燥,其中在硬化和/或干燥之后,焊接停止层(5)完全保留在导体装置(2)的上侧(20)和下侧(25)上。
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