CN102315257A - 功率半导体器件 - Google Patents
功率半导体器件 Download PDFInfo
- Publication number
- CN102315257A CN102315257A CN201110192302XA CN201110192302A CN102315257A CN 102315257 A CN102315257 A CN 102315257A CN 201110192302X A CN201110192302X A CN 201110192302XA CN 201110192302 A CN201110192302 A CN 201110192302A CN 102315257 A CN102315257 A CN 102315257A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 3
- 239000002019 doping agent Substances 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10167819A EP2402997B1 (en) | 2010-06-30 | 2010-06-30 | Power semiconductor device |
EP10167819.1 | 2010-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102315257A true CN102315257A (zh) | 2012-01-11 |
CN102315257B CN102315257B (zh) | 2015-09-09 |
Family
ID=42985587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110192302.XA Active CN102315257B (zh) | 2010-06-30 | 2011-06-30 | 功率半导体器件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8304814B2 (zh) |
EP (1) | EP2402997B1 (zh) |
JP (1) | JP5781383B2 (zh) |
KR (1) | KR101683751B1 (zh) |
CN (1) | CN102315257B (zh) |
AT (1) | ATE545155T1 (zh) |
ES (1) | ES2382185T3 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579296A (zh) * | 2012-08-06 | 2014-02-12 | 三垦电气株式会社 | 半导体装置及其制造方法 |
CN109449202A (zh) * | 2018-10-30 | 2019-03-08 | 广州工商学院 | 一种逆导双极型晶体管 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5644793B2 (ja) * | 2012-03-02 | 2014-12-24 | 株式会社デンソー | 半導体装置 |
US9666705B2 (en) * | 2012-05-14 | 2017-05-30 | Infineon Technologies Austria Ag | Contact structures for compound semiconductor devices |
JP2015032744A (ja) * | 2013-08-05 | 2015-02-16 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US9768284B2 (en) | 2015-03-05 | 2017-09-19 | Infineon Technologies Americas Corp. | Bipolar semiconductor device having a charge-balanced inter-trench structure |
US9685506B2 (en) * | 2015-03-05 | 2017-06-20 | Infineon Technologies Americas Corp. | IGBT having an inter-trench superjunction structure |
US9831330B2 (en) | 2015-03-05 | 2017-11-28 | Infineon Technologies Americas Corp. | Bipolar semiconductor device having a deep charge-balanced structure |
JP6406452B2 (ja) * | 2015-06-30 | 2018-10-17 | 富士電機株式会社 | 半導体装置及びその製造方法 |
WO2018030440A1 (ja) | 2016-08-12 | 2018-02-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020005548A1 (en) * | 2000-05-30 | 2002-01-17 | Fairchild Korea Semiconductor Ltd. | Trench-gate power semiconductor device preventing latch-up and method for fabricating the same |
US20020125529A1 (en) * | 2001-03-09 | 2002-09-12 | Jun Zeng | Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
JP2008244466A (ja) * | 2007-02-27 | 2008-10-09 | Matsushita Electric Ind Co Ltd | 半導体装置 |
CN100449778C (zh) * | 2004-07-16 | 2009-01-07 | 丰田自动车株式会社 | 绝缘栅双极晶体管 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03246256A (ja) * | 1989-09-27 | 1991-11-01 | Jujo Paper Co Ltd | 新規なフタル酸誘導体金属塩及び該金属塩を含有する光遮断性及び光感応性のあるプレート |
US5202750A (en) * | 1990-04-09 | 1993-04-13 | U.S. Philips Corp. | MOS-gated thyristor |
JP3297060B2 (ja) * | 1990-09-17 | 2002-07-02 | 株式会社東芝 | 絶縁ゲート型サイリスタ |
JP4723816B2 (ja) * | 2003-12-24 | 2011-07-13 | 株式会社豊田中央研究所 | 半導体装置 |
JP2008288386A (ja) * | 2007-05-17 | 2008-11-27 | Hitachi Ltd | 半導体装置 |
JP4544360B2 (ja) * | 2008-10-24 | 2010-09-15 | トヨタ自動車株式会社 | Igbtの製造方法 |
-
2010
- 2010-06-30 AT AT10167819T patent/ATE545155T1/de active
- 2010-06-30 EP EP10167819A patent/EP2402997B1/en active Active
- 2010-06-30 ES ES10167819T patent/ES2382185T3/es active Active
-
2011
- 2011-06-28 KR KR1020110062877A patent/KR101683751B1/ko active IP Right Grant
- 2011-06-29 US US13/172,054 patent/US8304814B2/en active Active
- 2011-06-30 CN CN201110192302.XA patent/CN102315257B/zh active Active
- 2011-06-30 JP JP2011145616A patent/JP5781383B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020005548A1 (en) * | 2000-05-30 | 2002-01-17 | Fairchild Korea Semiconductor Ltd. | Trench-gate power semiconductor device preventing latch-up and method for fabricating the same |
US20020125529A1 (en) * | 2001-03-09 | 2002-09-12 | Jun Zeng | Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge |
CN100449778C (zh) * | 2004-07-16 | 2009-01-07 | 丰田自动车株式会社 | 绝缘栅双极晶体管 |
JP2008244466A (ja) * | 2007-02-27 | 2008-10-09 | Matsushita Electric Ind Co Ltd | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579296A (zh) * | 2012-08-06 | 2014-02-12 | 三垦电气株式会社 | 半导体装置及其制造方法 |
CN109449202A (zh) * | 2018-10-30 | 2019-03-08 | 广州工商学院 | 一种逆导双极型晶体管 |
Also Published As
Publication number | Publication date |
---|---|
US8304814B2 (en) | 2012-11-06 |
KR101683751B1 (ko) | 2016-12-20 |
ES2382185T3 (es) | 2012-06-06 |
JP2012015518A (ja) | 2012-01-19 |
JP5781383B2 (ja) | 2015-09-24 |
ATE545155T1 (de) | 2012-02-15 |
KR20120002455A (ko) | 2012-01-05 |
US20120001199A1 (en) | 2012-01-05 |
CN102315257B (zh) | 2015-09-09 |
EP2402997A1 (en) | 2012-01-04 |
EP2402997B1 (en) | 2012-02-08 |
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191127 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB RESEARCH Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210707 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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Effective date of registration: 20240116 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |