CN102290384B - 绝缘构件、金属基底衬底、半导体模块及其制造方法 - Google Patents

绝缘构件、金属基底衬底、半导体模块及其制造方法 Download PDF

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CN102290384B
CN102290384B CN201110172889.8A CN201110172889A CN102290384B CN 102290384 B CN102290384 B CN 102290384B CN 201110172889 A CN201110172889 A CN 201110172889A CN 102290384 B CN102290384 B CN 102290384B
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inorganic filler
insulating component
epoxy resin
metallic substrates
weight
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CN102290384A (zh
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冈本健次
雁部龙也
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明提供散热性和击穿强度两者都更好的绝缘构件、使用该绝缘构件的金属基底衬底和半导体模块及其制造方法。本发明的绝缘构件包括：环氧树脂；第一无机填料，该第一无机填料扩散入环氧树脂，且具有1-99nm的平均粒径；以及第二无机填料，该第二无机填料扩散入环氧树脂，且具有0.1-100μm的平均粒径。第一无机填料和第二无机填料彼此独立，且是从包括Al2O3、SiO2、BN、AlN、和Si3N4的组中选出的至少一种物质，绝缘构件中的第一无机填料和第二无机填料的混合比分别为0.1到7重量％和80到95重量％。可通过将金属箔和金属基底分别形成在绝缘构件的任一表面上从而形成金属基底衬底。

Description

绝缘构件、金属基底衬底、半导体模块及其制造方法
技术领域
本发明涉及绝缘构件、金属基底衬底、半导体模块及其制造方法。
背景技术
用于供电设备的半导体模块应用广泛，从诸如家用空调和电冰箱的消费者设备到诸如逆变器和伺服控制器的工业设备都有所应用。从功耗的角度看，将半导体模块安装在诸如金属基底衬底或陶瓷衬底的布线衬底上。将诸如功率半导体元件的一个或多个电路元件安装在布线衬底上，固定塑料外壳框架，并通过用硅胶、环氧树脂等进行密封而制成半导体模块。
而且，为了降低制造成本，已开发出一种使用传递模塑方法的完全模塑的半导体模块(参考JP-A-9-139461，段落0038，图1和图18)。关于完全模塑的半导体模块，引线框和散热结构固定联结，确保其间的电绝缘。图4到图6示出现有的完全模塑的半导体模块40的示例。
在图4所示的示例中，将诸如功率半导体元件或驱动IC的多个电路元件46安装在引线框上47，并通过接合线48彼此连接。在将该组合件置于预定的模塑模具中之后，通过将模塑树脂49注入模塑模具中从而制成完全模塑的半导体模块40a。在图5所示的示例中，除了图4所示的示例的结构之外，还在模块下部设置散热结构50。在图6所示的示例中，设有金属基底衬底60，该金属基底衬底60通过将金属箔62和金属基底63预先附着到绝缘层61的前表面和后表面而形成。金属基底衬底60兼有绝缘层和散热结构两者的功能。
然而，从功耗的角度看，迄今已知的完全模塑的半导体模块具有在200V、50A的范围中的应用限制，且当电流容量超过50A时，功率半导体元件损耗增大，存在完全模塑的半导体模块的冷却性能不够的问题。关于使用金属基底衬底的半导体模块，可使金属基底衬底的绝缘层的厚度减小至100-150μm，这意味着可减小功率半导体下部的热阻。与此同时，关于完全模塑的半导体模块，为了确保模塑树脂的填充性，需要使模塑树脂的厚度成为300μm或更大，从而使热阻增大。
在图5所示的示例中，当使模块下部中的模塑树脂49的厚度成为200μm或更小时，会例如在引线框47和散热结构50之间的间隙中残留未填充模塑树脂49的空间，并且会引发绝缘失效。虽然可通过在模塑时提高树脂注入压力从而提高填充性，但这可能会导致接合线47的变形或断开。
在图6所示的示例中，由于电路元件46和接合线47直接接合到金属基底衬底60，因此无需在模块下部中填充模塑树脂。然而，由于需要单独制造金属基底衬底60，因此存在材料成本增加的问题。
而且，在金属基底衬底60的绝缘层61中，通过将无机填料(例如，氧化硅、氧化铝、氮化硅、氮化铝、或氮化硼)填充到环氧树脂中而使热导率增加，但由于击穿电压随着填充量的增加而减小，因此3-4W/m·K的热导率是极限，并且对于冷却性能存在限制。
虽然可对布线衬底使用作为氧化铝、氮化硅、氮化铝等的烧结体的陶瓷衬底以增加热导率，但存在陶瓷衬底相比金属基底衬底具有更高成本的问题。
发明内容
因此，鉴于上述的问题，本发明的目的在于，提供散热性和击穿强度两者都更好的绝缘构件、使用该绝缘构件的金属基底衬底和半导体模块及其制造方法。
为了实现该目的，本发明的一个方面是一种绝缘构件，其包括：环氧树脂；第一无机填料，该第一无机填料扩散在环氧树脂中，且具有1到99nm的平均粒径；以及第二无机填料，该第二无机填料扩散在环氧树脂中，且具有0.1到100μm的平均粒径，其中，第一无机填料和第二无机填料彼此独立，并且是从包括Al2O3、SiO2、BN、AlN、和Si3N4的组中选出的至少一种物质，绝缘构件中的第一无机填料和第二无机填料的混合比分别为0.1-7重量％和80-95重量％。
优选地，第一无机填料的平均粒径为1-50nm。优选地，第二无机填料的平均粒径为0.1到50μm。优选地，第一无机填料的混合比为3-6重量％。
优选地，绝缘构件的厚度为10-500μm。优选地，绝缘构件具有4-15W/m·K的热导率和至少5kV的击穿电压。
本发明的另一方面是一种金属基底衬底，其包括：由上述的绝缘构件构成的绝缘层；金属基底板以及金属箔。
本发明的又一方面是一种半导体模块，包括：上述的金属基底衬底；以及安装在金属基底衬底的金属箔的表面上的至少一个电路元件。
根据本发明的这个方面的半导体模块的另一实施方式包括：金属块；附着于金属块的一个表面的由上述绝缘构件构成的绝缘层；以及安装在金属块的另一表面上的至少一个电路元件。
本发明的另一方面是一种绝缘构件制造方法，其包括如下步骤：向环氧树脂添加具有1-99nm的平均粒径的第一无机填料；对第一无机填料和环氧树脂的混合物加压，以使其通过孔并防止第一无机填料的凝聚；进一步向已通过孔的混合物添加具有0.1-100μm的平均粒径的第二无机填料；以及对第一无机填料和第二无机填料和环氧树脂的混合物进行成形并固化。
本发明的又一方面是一种半导体模块制造方法，包括如下步骤：将上述的绝缘构件作为绝缘层附着于金属块的一个表面；以及将至少一个电路元件安装在金属块的另一个表面上。
如上所述，根据本发明，通过以预定的混合比使用如此具有不同平均粒径的两种无机填料，可在维持绝缘构件的散热性的同时增加击穿强度。然后，如上所述通过在金属基底衬底或半导体模块中使用绝缘构件，可提供散热性更好的金属基底衬底和半导体模块。
附图说明
图1是示意性地示出根据本发明的金属基底衬底的一个实施方式的截面图。
图2A到图2E是示意性地示出根据本发明的半导体模块制造方法的一个实施方式的截面图。
图3是示意性地示出图2A到图2E所示的制造方法的一个替代性示例的截面图。
图4是示意性地示出迄今已知的半导体模块的一个示例的截面图。
图5是示意性地示出迄今已知的半导体模块的另一个示例的截面图。
图6是示意性地示出迄今已知的半导体模块的又一个示例的截面图。
具体实施方式
下面，参考附图给出对本发明的一个实施方式的描述。下述的实施方式旨在详细描述本发明，而不是限制本发明。
首先，描述根据本发明的绝缘构件的一个实施方式。该绝缘构件包括：环氧树脂；以及具有1-99mm的平均粒径的第一无机填料和具有0.1-100μm的平均粒径的第二无机填料，这两种无机填料均分散在环氧树脂中。
虽然并无特别限制，但例如可对诸如双酚A环氧树脂或双酚F环氧树脂的双官能团环氧树脂；或者诸如苯酚酚醛环氧树脂、甲酚酚醛环氧树脂、双酚A酚醛环氧树脂、双酚F酚醛环氧树脂、萘环氧树脂、联苯环氧树脂、或二环戊二烯环氧树脂的多官能团环氧树脂进行单独或多种组合使用，将其用作环氧树脂。其中，芳香族环氧树脂是优选的，使用双酚A环氧树脂是尤为优选的。
第一无机填料的平均粒径极小，处于1到99nm的范围内。当粒径小于1nm时，存在发生凝聚的问题。与此同时，当粒径为100nm或更大时，存在无法获得纳米填料所特有的益处的问题。第二无机填料的平均粒径相对较大，处于0.1-100μm的范围内。当粒径超过100μm时，存在无法获得绝缘的问题。与此同时，当粒径小于0.1μm时，存在捏和变得困难的问题。
更优选地，第一无机填料的平均粒径处于1-50nm的范围内。而且，更优选地，第二无机填料的平均粒径为0.1-50μm。在本说明书中，平均粒径的测量是使用激光衍射和散射方法进行的。另外，优选地，第一无机填料的粒径分布处于1～99nm的范围内，且更优选地处于1-50nm的范围内。优选地，第二无机填料的微粒尺寸分布处于0.1～100μm的范围内，且更优选地处于0.5-50μm的范围内。
第一无机填料是选自包括Al2O3、SiO2、BN、AlN、和Si3N4的组中的一种物质或多种物质组合。而且，第二无机填料也是选自包括Al2O3、SiO2、BN、AlN、和Si3N4的组中的一种物质或多种物质组合。第一无机填料和第二无机填料可以是相同的化合物，也可以是不同的化合物。
令绝缘构件的重量为100％，则第一无机填料的混合比处于0.1-7重量％的范围内。当混合比小于0.1重量％时，存在无法获得纳米填料的益处的问题。与此同时，当混合比超过7重量％时，存在扩散不能的问题。更优选地，第一无机填料的混合比处于3-6重量％的范围内。
令绝缘构件的重量为100％，则第二无机填料的混合比处于80-95重量％的范围内。当混合比小于80重量％时，存在无法获得预定的热导率的问题。与此同时，当混合比超过95重量％时，存在绝缘性能下降的问题。更优选地，使第二无机填料的混合比处于80到90重量％的范围内。
可将固化剂或固化助剂添加到本发明的绝缘构件中，以控制固化反应。固化剂一般可被用作为环氧树脂固化剂，例如，可使用：诸如双氰胺的胍类固化剂；诸如己二酸二酰肼、问苯二甲酸二酰肼、或十二烷酸二酰肼的二酰肼类固化剂；诸如苯酚酚醛的苯酚类固化剂；诸如甲基四氢邻苯二甲酸酐的酸酐类固化剂；诸如二氨基二苯基甲烷的胺类固化剂；或者诸如2-乙基-4-甲基咪唑的咪唑类固化剂。而且，作为固化助剂，可使用：诸如2-乙基-4-甲基咪唑的咪唑型；诸如苄基甲胺的叔胺型；诸如三苯基膦的芳香膦型；或者诸如三氟化硼单乙胺的路易斯酸。
优选地，令绝缘构件为100重量％，则固化剂的混合比为1到10重量％。优选地，令绝缘构件为100重量％，则固化助剂的混合比为0.1到5重量％。以上描述了绝缘构件的每种原材料的混合比，剩余部分是环氧树脂的混合比。
接下来，描述绝缘构件的制造方法。首先，将第一无机填料添加到环氧树脂中。由于第一无机填料的粒径极小，因此即使搅拌时微粒也会凝聚，很难使得第一无机填料在树脂中扩散。因此，在将第一无机填料添加到环氧树脂中之后，可通过使用加压孔通过型扩散机对混合物加压并使其通过孔，从而使得第一无机填料在环氧树脂中扩散。
接下来，将第二无机填料添加到混合物中。由于第二无机填料的粒径相对较大，因此仅通过搅拌就能使第二无机填料在环氧树脂中扩散，而不会凝聚。可在添加第二无机填料时一并进一步添加环氧树脂。即，环氧树脂的预定混合比可在两个独立的场合下添加。
在添加第二无机填料之后，根据需要添加固化剂和固化助剂，并进行搅拌。而且，当预浸渍混合物时，也可同时添加溶剂。可使用例如甲基乙基酮(MEK)作为溶剂。
接下来，将混合物形成为诸如薄片状的预定形状。例如，在将混合物涂敷到可脱模的金属板或塑料板的表面之后，使用间隔物加压成预定厚度，并通过加热进行固化。这样，可制造绝缘构件。优选地，薄片状绝缘构件的厚度处于10-500μm的范围内，更优选地处于70到300μm的范围内。这样获得的绝缘构件具有4-15W/m·K的热导率和至少5kV的击穿电压，并在散热性和击穿强度方面更好。
参考图1，其给出使用根据本发明的绝缘构件的金属基底衬底和金属基底衬底的制造方法的实施方式的描述。如图1所示，金属基底衬底10包括：由根据本发明的绝缘构件构成的绝缘层11；形成在绝缘层11的一个表面上的一个或多个金属箔12；以及形成在绝缘层11的另一表面上的金属基底13。
例如，对于金属箔12可使用Cu或Al。在绝缘层11的表面上形成金属箔12之后，利用选择性蚀刻通过图案化形成电路图案。例如，对于金属基底13可使用Cu、Al、或Fe。可通过将金属基底13紧贴在绝缘层11的表面地放置并施加热压，从而使金属基底13附着于绝缘层11。
通过采用这种金属基底衬底10，可对布线衬底采用任意形状，并且还可根据需要来构成电路图案。因此，诸如功率半导体元件的电路只需安装在金属箔12上即可应用于任意类型的半导体模块。
参考图2A到图2E，描述使用根据本发明的绝缘构件的半导体模块和半导体模块的制造方法的实施方式。首先，如图2A所示，通过挤压将金属板冲裁成诸如正方形或长方形的预定形状，由此制造金属块24。例如，对于金属块24可使用Cu或Mo。而且，虽然并无特别限定，但优选地使金属块24的厚度处于1.0-6.0mm的范围内。
接下来，如图2B所示，将由根据本发明的绝缘构件构成的绝缘层21紧贴金属块24的一个表面地放置，并通过热压使两者彼此附着。而且，如图2C所示，诸如功率半导体元件或驱动IC的电路元件26通过焊接与金属块24的另一个表面接合。优选地，焊接在可进行氢还原的炉中并利用球粒形焊料进行。使用可进行氢还原的炉的原因在于，通过利用氢还原除去和活化金属块24表面上的氧化膜，从而提高焊料渗透性。例如，使用诸如SnPbAg的高温焊料、或诸如SnAgCu的无铅焊料作为焊料材料。焊接温度根据焊料熔点来设定。
当在功率半导体元件和金属块的焊料层(未示出)中残留空隙时，热阻增大，因而无法有效地释放从功率半导体元件产生的热量。因此，为了不产生空隙，优选在焊料熔融的情况下在10托或小于10托的压力下进行抽真空。
接下来，如图2D所示，使用接合线28对电路元件26和引线框27进行连接。优选地，使用具有125-500μm直径的Al引线作为接合线28。优选地，接合线28是超声波接合的。
然后，如图2E所示，使用传递模塑方法，用模塑树脂29对组合件进行密封。对密封进行具体描述，虽然未特别示出，但组合件例如放置在附连至传递模塑机的模塑模具中，在使用柱塞将药片形模塑树脂注入到已预热的模塑模具中之后，由于模塑树脂会在数十秒内固化，因此立即将其从模塑模具中除去，并通过在恒温腔中进行后固化从而完成密封。优选地，将模塑模具维持在170-180℃的温度。模塑树脂29包括环氧树脂和选自包括Al2O3、SiO2、BN、AlN、和Si3N4的组中的至少一种物质。优选地，模塑树脂29具有0.5-5W/m·K的热导率。
图2C中，绝缘层21仅形成在金属块24与电路元件相反一侧的表面，但如图3所示，也优选地将绝缘层21a沉积在金属块24的侧表面上。由于绝缘层21a很薄，因此当在金属块24和与喷射膜形成接触的冷却翼片(图中省略)之间施加高电压时是高效率的，并且由此可确保绝缘性能。金属块24的侧表面上的绝缘膜21a的沉积距离根据所使用的电压来确定。
工作例
将5重量％的纳米规模的氧化铝(由大明化学有限公司制造，型号TM-100，平均粒径12nm)添加到100重量％的环氧树脂(由JER有限公司制造，型号828)中，在使用加压孔通过型扩散机一边防止凝聚一边进行扩散之后，添加1250重量％的微米规模氧化铝(由Admatechs有限公司制造，平均粒径0.6-10μm)并进行搅拌。之后，添加5重量％的双氰胺固化剂(由JER有限公司制造，型号DICY15)和2重量％的咪唑固化助剂(由四国化学公司制造，型号2P4MHZ)。接下来，通过将混合物涂敷在可脱模的板上，并在5MPa、180℃下加压从而将薄片形绝缘构件制造成200μm的厚度(工作例1)。然后，测量绝缘构件的热导率和击穿电压。使用激光闪光法进行热导率的测量。为了进行比较，还对以相同方式制造——除了将微米规模氧化铝设为92重量％而不添加纳米规模氧化铝这一点以外——的绝缘构件(比较例1)进行测量。结果在表1中示出。
表1
如表1所示，工作例1和比较例1两者都具有8.0W/m·K的热导率，但工作例1中的击穿电压为6.0kV，示出成为比较例1的4.0kV的1.5倍的较高值。这样，通常情况下，尽管无机填料填充得越多，热导率增加，但击穿电压会降低，与此相对地，可通过如工作例1那样添加纳米规模无机填料，从而防止击穿电压降低。

Claims (6)

1.一种绝缘构件制造方法，包括如下步骤：
向环氧树脂添加具有1到99nm的平均粒径的第一无机填料的步骤；
对所述第一无机填料和所述环氧树脂的混合物进行加压，以使其通过孔，从而使所述第一无机填料在所述环氧树脂中扩散的步骤；
进一步向已通过所述孔的混合物添加具有0.1到100μm的平均粒径的第二无机填料的步骤；以及
对所述第一无机填料和第二无机填料和所述环氧树脂的混合物进行成形并固化的步骤。
2.如权利要求1所述的绝缘构件制造方法，其特征在于，
所述第一无机填料和第二无机填料彼此独立，且是从包括Al2O3、SiO2、BN、AlN、和Si3N4的组中选出的至少一种物质，
所述绝缘构件中的所述第一无机填料和第二无机填料的混合比分别为0.1到7重量％和80到95重量％。
3.一种金属基底衬底用绝缘构件制造方法，该绝缘构件用于形成于金属基底的一个表面，所述制造方法包括如下步骤：
向环氧树脂添加具有1到99nm的平均粒径的第一无机填料的步骤；
对所述第一无机填料和所述环氧树脂的混合物进行加压，以使其通过孔，从而使所述第一无机填料在所述环氧树脂中扩散的步骤；
进一步向已通过所述孔的混合物添加具有0.1到100μm的平均粒径的第二无机填料的步骤；以及
对所述第一无机填料和第二无机填料和所述环氧树脂的混合物进行成形并固化的步骤。
4.如权利要求3所述的金属基底衬底用绝缘构件制造方法，其特征在于，
所述第一无机填料和第二无机填料彼此独立，且是从包括Al2O3、SiO2、BN、AlN、和Si3N4的组中选出的至少一种物质，
所述绝缘构件中的所述第一无机填料和第二无机填料的混合比分别为3到7重量％和80到95重量％。
5.一种半导体模块制造方法，包括如下步骤：
将绝缘构件作为绝缘层附着于金属块的一个表面的步骤；以及
将至少一个电路元件安装在所述金属块的另一个表面上的步骤，
作为制造所述绝缘构件的步骤，还包括如下步骤：
向环氧树脂添加具有1到99nm的平均粒径的第一无机填料的步骤；
对所述第一无机填料和所述环氧树脂的混合物进行加压，以使其通过孔，从而使所述第一无机填料在所述环氧树脂中扩散的步骤；
进一步向已通过所述孔的混合物添加具有0.1到100μm的平均粒径的第二无机填料的步骤；以及
对所述第一无机填料和第二无机填料和所述环氧树脂的混合物进行成形并固化的步骤。
6.如权利要求5所述的半导体模块制造方法，其特征在于，
所述第一无机填料和第二无机填料彼此独立，且是从包括Al2O3、SiO2、BN、AlN、和Si3N4的组中选出的至少一种物质，
所述绝缘构件中的所述第一无机填料和第二无机填料的混合比分别为0.1到7重量％和80到95重量％。
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