CN102566262B - Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate - Google Patents
Device and method suitable for carrying out wafer-level nano imprinting on uneven substrate Download PDFInfo
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Abstract
The invention discloses a device and method suitable for carrying out wafer-level nano imprinting on an uneven substrate. The method has the following basic principle: a fluoropolymer-based thin film structure composite flexible die is introduced, gas auxiliary micro-contact is adopted to imprint and a fluid dielectrophoresis force is adopted to drive so as to implement the rapid and complete filling of liquid polymer in a nano structure cavity of the die under the condition of a very small imprinting force; and the demoulding is carried out on the basis of fluoropolymer-based ultralow surface energy and the large-scale demoulding can be implemented by combining a twice-curing and uncovering demoulding method and adopting a micro ejection force. According to the invention, the manufacturing of a large-area micro/nano structure on the uneven (bent, warped or step) or curve or fragile substrate is implemented, and the method has the obvious advantages of high complex accuracy, large imprinting area, high efficiency and low cost and is suitable for manufacturing devices such as LED (Liquid Emitting Diode) nano patterning technology, optical devices (such as an optical lens), butterfly solar condensers, microfluidic devices and the like.
Description
Technical field
The present invention relates to a kind of method in the non-smooth or surperficial manufacturing large-area nano of curved substrate structure, relate in particular to a kind of based on fluoropolymer base film structure composite soft mold and the power-actuated apparatus and method that are applicable to non-smooth substrate wafer level nano impression of fluid dielectrophoresis, realize efficient, low-cost LED nano patterning, belong to minute manufacturing and optoelectronic device manufacturing technology field.
Background technology
Has application very widely at non-smooth (bending, warpage or step) or curved substrate surface manufacturing large area micro-nano rice structure, as LED nano patterning technology, optical device (as optical lens, diffraction optical element etc.), butterfly solar concentrator, compound eye image sensor, micro-fluidic device etc.especially LED nano patterning (adopting the photosphere of getting of graphics of nanometer dimension Sapphire Substrate and graphics of nanometer dimension LED epitaxial wafer) is thought to improve the effective way of light generation efficiency and light extraction efficiency by academia and industry member, be so-called nano patterned Sapphire Substrate (Nano-Patterned Sapphire Substrate, NPSS) and LED epitaxial wafer pattern technology (Photonic Crystal LED, photonic crystal LED), especially photonic crystal is thought to improve by industry at present and is got optical efficiency, realize ultra-high brightness LED one of the most effective technological means.But LED epitaxial wafer surface irregularity, there is buckling deformation in the surface, and has the protrusion of surface of several micron-scales, belongs to frangible substrate.But it is very difficult making the large-area nano structure at surface of uneven substrate.For example, because the LED epitaxial wafer exists warpage and rat, the optical lithography depth of focus is than the requirement that can't adapt to exposure; Adopt beamwriter lithography to make the large-area nano infrastructure cost high, throughput rate is low, is difficult to realize the manufacturing of large tracts of land, scale.For NPSS, adopt existing contact or proximity lithographic equipment can't satisfy the requirement of nano graph manufacturing accuracy, adopt step-by-step movement projection lithography (Stepper) although can realize that NPSS makes, but the Stepper that semicon industry uses seems too expensive in the LED industry, increased the manufacturing cost of LED, and LED is very responsive for cost.Although it is graphical that other has also attempted being applied to LED such as nanometer manufacture methods such as nanosphere pearly-lustre quarter, anodic oxidation aluminium formwork (AAO), laser interference lithographies; but all in the deficiency that exists aspect certain, as cost, throughput rate, consistance, yield and scale manufacturing etc.Can't satisfy the LED industry for the harshness requirement (LED is very strict for the requirement of cost, consistance and yield) of high rate/low cost production, high yield.
Summary of the invention
The object of the invention is to utilize good conformal contact and the stripping feature of fluoropolymer base film structure composite soft mold, and drive in conjunction with the fluid dielectrophoretic force method that nano impression is filled, a kind of apparatus and method that are applicable to non-smooth substrate wafer level nano impression towards non-smooth substrate wafer level nano impression are provided, realize going out the large-area nano structure at surperficial efficient, the low cost fabrication of non-smooth or curved substrate.
The present invention proposes: introduce a kind of fluoropolymer base film structure composite soft mold, and in conjunction with " twice curing " and the demoulding of " opening " formula, adopt small knockout press can realize the large tracts of land demoulding, avoid the adhesion defects in the large tracts of land knockout course and need large knockout press to cause mould and copy pattern damage are affected complex quality and die life; Based on gas auxiliary " little contact " and high resiliency membrane structure two-layer compound soft mold (guaranteeing complete even conformal the contacting of mould and non-flat substrate in moulding process), adopt " fluid dielectrophoretic force " to drive and realize liquid polymer quick and complete filling for mould nanostructured cavity under very little force of impression condition, becoming traditional nano impression " pressure-driven " drives into " fluid dielectrophoretic force ", realization forms the large-area nano structure on non-smooth, frangible substrate, solve that nano impression is filled and the contradictory problems of the demoulding.
To achieve these goals, the present invention takes following technical solution:
A kind of device that is applicable to non-smooth substrate wafer level nano impression, it comprises: the substrate of worktable, conduction (can be wafer or epitaxial wafer), liquid organic polymer, template, valve plate, gas chamber, ultraviolet source, eindruckwerk, vacuum line, pressure piping, electric field; Wherein, being coated with the full wafer substrate that is covered with liquid organic polymer is fixed on worktable; Template is adsorbed on the bottom surface of valve plate by vacuum line, and (the template outermost adheres on valve plate, when guaranteeing not have pull of vacuum absorption, mould still is tightly connected with valve plate), valve plate is fixed on the bottom surface with gas chamber, and ultraviolet source is fixed on the item face of gas chamber; Eindruckwerk is connected with gas chamber; Pressure piping is connected with the air intake opening of gas chamber; Described template comprises support conductive layer and feature structure layer, is provided with electric field between support conductive layer and substrate; Also has the nanostructured chamber on the feature structure layer.
Described support conductive layer carries out surface modification treatment, perhaps applies the coupling agent material of layer of transparent.
The high resiliency film-form PET material that described support conductive layer is electrically conducting transparent (being typical compliant conductive film); Described feature structure layer is utmost point low-surface-energy, hard (high elastic modulus), high-k, transparent fluoropolymer material (high-k).
Described feature structure layer thickness is the 10-50 micron, and supporting conductive layer thickness is the 100-200 micron.
Described ultraviolet source is LED array.
Described electric field is take the template end as anodal, and substrate terminal is negative pole; Electric field adopts alternating voltage, the frequency 5-30Hz of voltage, the big or small 50-380V of voltage.
The working range of described pressure piping is: 0-5bar; Working pressure in moulding process is 100-1000mbar; The working range of vacuum line＜-0.2bar.
A kind of employing is applicable to the method for stamping of the device of non-smooth substrate wafer level nano impression, if substrate itself conducts electricity, it comprises the steps:
(1) preprocessing process
The liquid organic polymer (also claiming resist, is a kind of high-k " epoxy radicals " low viscosity polymer material) of spin coating one deck, be placed on worktable on substrate; Template is adsorbed on bottom surface at valve plate by vacuum mode; And template and substrate are aligned;
(2) moulding process
1. eindruckwerk band moving platen moves to substrate from initial station, and the opening pressure pipeline, pass into pressurized air to gas chamber simultaneously; Eindruckwerk moves to substrate with the speed of fast feed, in case the minimum point of feature structure layer contacts with liquid organic polymer on substrate, eindruckwerk just changes work speed into;
2. advance under the combined action of force of impression in the work of the auxiliary force of impression of gas and eindruckwerk, the film-form template is shakeout on the liquid organic polymer that spreads over substrate gradually, and makes conformal contact of liquid organic polymer on template and substrate;
3. apply electric field between the support conductive layer (the PET film of electrically conducting transparent) of template and substrate, wherein the template end is anodal, substrate terminal is negative pole, under the effect of extra electric field, form " fluid dielectrophoresis " and " class Jie powers on wetting ", make the interfacial characteristics of liquid organic polymer and template change infiltration into by non-infiltration, and the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, drive the Fast Filling of liquid organic polymer in the nanostructured cavity of template characteristic structural sheet, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance,
4. continue to increase the auxiliary force of impression of gas, realize the complete filling of liquid organic polymer in the nanostructured chamber of the feature structure layer of template, and residual layer is thinned to predetermined thickness;
(3) one-step solidification process
Open ultraviolet source (LED lamp array), ultraviolet light sees through the exposure of template liquid towards organic polymer, makes it " one-step solidification ", completes the typing of polymer nanocomposite structure; " once suitably in advance solidify " helps the demoulding (after polymkeric substance solidifies fully, generate larger adhesion on template and polymer interface, the demoulding needs larger knockout press, and the defective that is easy to adhere to), and after pressure discharges fully, solidify fully, be conducive to the raising of complex precision.
(4) knockout course
1. close the auxiliary force of impression of electric field and gas, the little movement that makes progress of eindruckwerk band moving platen, at first the adhesion of the horizontal contact interface of destructive characteristics structural sheet and stamping structure (polymkeric substance after curing), template and the stamping structure of " one-step solidification " are separated from each other, under the complete release conditions of force of impression, then regelate or rear curing (post-curing) processing are carried out in the stamping structure of " one-step solidification ", reach fully and to solidify (purpose of twice curing: the one, after avoiding solidifying fully, polymkeric substance and substrate produce larger adhesion, be unfavorable for the demoulding, the 2nd, before solidifying fully, discharge in advance the distortion of stamping structure, improve the quality of coining pattern),
2. after stamping structure solidifies fully fully, " opening " formula of employing release method is (because adopt the fexible film structure mold, at first the knockout course mould is inevitable is separated from periphery and stamping structure, increase along with hoisting depth, the demoulding is expanded to the centre), be that at first the knockout course template is separated from periphery and stamping structure, increase along with hoisting depth, the demoulding is expanded to the centre, (mainly overcome the friction force of polymkeric substance and substrate interface sidewall) and can realize being separated from each other gradually of template and coining pattern under very little knockout press effect, complete the demoulding;
3. template is with after stamping structure separates fully, and eindruckwerk band moving platen 4 moves upward fast, returns to the impression original position, in order to change conductive substrates, begins working cycle next time;
(5) last handling process
Anisotropic etch process (for example RIE) equal proportion by routine is etching down, removes residual layer, copies the micro-nano feature structure of mould on polymkeric substance;
Further combined with etching technics (wet etching or dry etching), take the polymkeric substance figure as mask, feature pattern is transferred on substrate, realize substrate graph.
Perhaps, a kind of employing is applicable to the method for stamping of the device of non-smooth substrate wafer level nano impression, if substrate itself is non-conductive, it comprises the steps:
(1) preprocessing process
At first deposit one deck conductive layer on non-conductive substrate, the liquid organic polymer of spin coating one deck, be placed on worktable on conductive layer; Template is adsorbed on bottom surface at valve plate by vacuum mode; And template and substrate are aligned;
(2) moulding process
1. eindruckwerk band moving platen moves to substrate from initial station, and the opening pressure pipeline, pass into pressurized air to gas chamber simultaneously; Eindruckwerk moves to substrate with the speed of fast feed, in case the minimum point of feature structure layer contacts with liquid organic polymer on substrate, eindruckwerk changes work speed into;
2. advance under the combined action of force of impression at the auxiliary force of impression of gas and eindruckwerk work, the film-form template is shakeout on the liquid organic polymer that spreads over substrate gradually, and makes conformal contact of liquid organic polymer on template and substrate;
3. apply electric field between the support conductive layer of template and substrate conductive layer, wherein the template end is anodal, substrate conductive layer end is negative pole, under the effect of extra electric field, form " fluid dielectrophoresis " and " class Jie powers on wetting ", make the interfacial characteristics of liquid organic polymer and template change infiltration into by non-infiltration, and the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, drive liquid organic polymer Fast Filling in the nanostructured chamber of feature structure layer, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance,
4. continue to increase the auxiliary force of impression of gas, realize the complete filling of liquid organic polymer in the nanostructured chamber of feature structure layer, and residual layer is thinned to predetermined thickness;
(3) one-step solidification process
Open ultraviolet source, ultraviolet light sees through the exposure of template liquid towards polymkeric substance, makes it " one-step solidification ", completes the stamping structure of polymer nanocomposite structure.
(4) knockout course
1. close the auxiliary force of impression of electric field and gas, the little movement that makes progress of eindruckwerk band moving platen, at first the adhesion of destructive characteristics structural sheet and the horizontal contact interface of stamping structure, template and the stamping structure of " one-step solidification " are separated from each other, under the complete release conditions of force of impression, then regelate or rear curing processing are carried out in the stamping structure of " one-step solidification ", reach fully and solidify;
2. after stamping structure solidifies fully fully, " opening " formula of employing release method. be that at first the knockout course template is separated from periphery and stamping structure, increase along with hoisting depth, the demoulding is expanded to the centre, can realize being separated from each other gradually of template and stamping structure under very little knockout press effect, complete the demoulding;
3. template is with after stamping structure separates fully, and eindruckwerk band moving platen moves upward fast, returns to the impression original position, in order to change substrate, begins working cycle next time.
(5) last handling process
Anisotropic etch process equal proportion by routine is etching down, removes residual layer, copies the micro-nano feature structure of mould on stamping structure;
Further combined with etching technics, take the stamping structure figure as mask, feature pattern is transferred on the conductive layer of substrate, and take conductive layer as mask layer, feature structure is transferred on substrate, remove polymkeric substance and conductive layer, realize substrate graph.
Described one-step solidification time 10-20s, the time 20-50s of regelate.
In the present invention, template, liquid organic polymer, substrate need to satisfy following condition:
(1) template: template is the membrane structure two-layer composite, namely comprises dielectric layer (dielectric layer) and conductive layer; Mold integral has very high elasticity or flexibility, to adapt to the requirement of non-smooth substrate conformal (conformal) contact; Should have good uv transmittance in addition, satisfy the ultra-violet curing requirement;
(2) liquid organic polymer: liquid polymer is high-k " epoxy radicals " low viscosity material, and contains light-initiated son, to realize the ultra-violet curing function.
(3) substrate: have electric conductivity or comprise conductive layer, for example for LED epitaxial wafer and some conductive substrates (as the SiC substrate), itself just has electric conductivity; And for some nonconducting substrates, need to deposit one deck conductive layer such as Cr, nickel or ITO etc. as Sapphire Substrate on substrate, this layer be the double hard mask layer (Hard Mask) of doing the sapphire etching simultaneously.
(4) specific inductive capacity of polymkeric substance must be higher than the specific inductive capacity of template dielectric layer (feature structure layer, i.e. fluoropolymer).
Notable feature of the present invention is:
(1) fluoropolymer base film structure two-layer compound soft mold, good conformal contact and antiwear characteristic, the feature structure layer has higher elastic modulus and (compares with PDMS, non-deformability is strong, multiple precision is high), support the very high elasticity of conductive layer and contact with the non-smooth substrate conformal of pliability adaptation;
(2) becoming traditional nano impression " pressure-driven " drives into " fluid dielectrophoretic force ";
(3) little contact, impression all is based on little the contact with knockout course, reduces die deformation and knockout press;
(4) fluoropolymer material such as Teflon has very high gas penetration potential, and the bubble that produces in moulding process is easy to eliminate;
(5) utilize master mold to make fluoropolymer basic mode tool and coining pattern manufacturing, all need not to carry out surperficial anti-stiction treatment, the demoulding is easy, simplifies mould manufacturing and imprint process;
(6) the mold work life-span long, defective is low.
Of the present inventionly realized at non-smooth or curved surface or step or frangible substrate surface is efficient, low cost fabrication goes out the large-area nano structure, the present invention be suitable for LED nano patterning technology, optical device (as optical lens, diffraction optical element etc.), butterfly solar concentrator, compound eye image sensor, etc. manufacturing, especially be fit to LED nano patterning technology.
Description of drawings
Fig. 1 is wafer scale nano-imprinting device structural representation of the present invention.
Fig. 2 is formwork structure schematic diagram of the present invention.
Fig. 3 a is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 b is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 c is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 d is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 e is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 f is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 g is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 h is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 i is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 3 j is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of LED epitaxial wafer step schematic diagram.
Fig. 4 a is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 b is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 c is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 d is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 e is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 f is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 g is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 h is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 i is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Fig. 4 j is based on apparatus of the present invention and method is carried out the graphical wafer scale nano-imprint process of Sapphire Substrate step schematic diagram.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
In Fig. 1, it comprises: worktable (wafer-supporting platform) 1, substrate (wafer, epitaxial wafer) 2, liquid organic polymer 3, template (mould) 4, valve plate 5, gas chamber 6, ultraviolet source 7, eindruckwerk 8, vacuum line 9, pressure piping 10, electric field 11; Wherein, being coated with the substrate 2 that is covered with liquid organic polymer 3 is fixed on worktable 1; Template 4 is adsorbed on the bottom surface of valve plate 5 by vacuum line 9, and (template 4 outermost adhere on valve plate 5, when guaranteeing not have pull of vacuum absorption, template 4 still is tightly connected with valve plate 5), valve plate 5 is fixed on the bottom surface of gas chamber 6, and ultraviolet source (can adopt LED lamp array) 7 is fixed on the item face of gas chamber 6; Eindruckwerk 8 is connected with gas chamber 6; Pressure piping 10 is connected with the air intake opening of gas chamber 6; Apply electric field 11 (die end is for anodal, and substrate terminal is negative pole) between the support conductive layer 401 of template 4 and conductive substrates 2 (the perhaps conductive layer 201 of non-conductive substrate).
In Fig. 2, described template 4 is the compound soft mold of fluoropolymer base film shape, it is by supporting conductive layer 401 and 403 one-tenth, feature structure layer, wherein feature structure layer 403 has extremely low surface energy, hard (high elastic modulus), high dielectric property and transparent characteristic, supports the characteristic that conductive layer 401 has transparent, conduction, highly flexible and membrane structure.Take the high resiliency film-form PET material of electrically conducting transparent as supporting conductive layer 401, take utmost point low-surface-energy, hard and transparent fluoropolymer material (high-k) as feature structure layer 403, wherein feature structure layer 403 comprises the graphic structure that will copy, i.e. the nanostructured chamber.Supporting conductive layer 401 is positioned on feature structure layer 403.Fluoropolymer base feature structure layer 403 thickness are the 10-50 microns, and its nanostructured is hard (having very high elastic modulus), but should keep whole flexibility; Supporting conductive layer 401PET thickness is the 100-200 micron, and the yardstick of the relative X of its thickness and Y is much smaller, and high resiliency and pliability good (lower Young modulus) are typical compliant conductive films.In addition, because fluoropolymer material has low-down surface energy, less with the adhesion of the PET that supports conductive layer 401, in order to increase adhesion both, must carry out surface modification treatment to the PET that supports conductive layer 401, perhaps apply the coupling agent material 402 of layer of transparent.
When reality was used, template 4 of the present invention was take the elastomeric PET film of electrically conducting transparent as supporting conductive layer 401, and clear, colorless KH-550 coupling agent is middle adhesion layer 402, and transparent fluoropolymer Teflon AF 1600 is feature structure layer 403.
Embodiment 1
The present invention is fabricated to the graphical embodiment of LED epitaxial wafer (conductive substrates) with GaN photonic crystal LED, carries out the patterned concrete technology step of LED epitaxial wafer as shown in Figure 3 based on apparatus and method of the present invention, comprising:
(1) preprocessing process
The liquid organic polymer 3 of spin coating one deck on GaN base LED substrate 2 is placed on worktable 1.Template 4 is adsorbed on bottom surface at valve plate 5 by vacuum mode; And template 4 and GaN base LED substrate 2 are aligned.As shown in Fig. 3 a.
(2) moulding process
1. base LED substrate 2 moves eindruckwerk 8 band moving platens 4 from initial station to GaN, and opening pressure pipeline 10, pass into pressurized air to gas chamber 6 simultaneously.Eindruckwerk 8 moves to substrate 2 with the speed of fast feed, in case the minimum point 40301 of film-form dual-layer composite soft mold feature structural sheet 403 contacts with liquid organic polymer 3 on substrate 2, eindruckwerk 8 changes work speed into, as shown in Fig. 3 b;
2. advance under the combined action of force of impression 801 at the auxiliary force of impression 1001 of gas and the small work of eindruckwerk 8, film-form template 4 is shakeout on the liquid organic polymer 3 that spreads over substrate 2 gradually, and make conformal contact of liquid organic polymer 3 on template 4 and substrate 2, as shown in Fig. 3 c;
3. (template 4 ends are for anodal to apply electric field 11 between the support conductive layer 401 (the PET film of electrically conducting transparent) of template 4 and substrate 2, epitaxial wafer 2 ends are negative pole), under the effect of extra electric field 11, form " fluid dielectrophoresis " and " class Jie powers on wetting ", make liquid organic polymer 3 and the interfacial characteristics of template 4 change infiltration into by non-infiltration, and the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, drive liquid organic polymer 3 Fast Filling of 40302 in template 4 feature structure layer 403 nanostructured cavity, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance, as shown in Fig. 3 d,
4. continue to increase the auxiliary force of impression of gas, realize 40302 the complete filling in the feature structure layer 403 nanostructured cavity of template 4 of liquid organic polymer 3, and residual layer is thinned to predetermined thickness, as shown in Fig. 3 e.
(3) one-step solidification process
Open ultraviolet source 7 (LED lamp array), ultraviolet light sees through template 4 liquid towards organic polymer 3 exposures, makes it " one-step solidification ", completes the typing of polymer nanocomposite structure." once suitably in advance solidify " helps the demoulding (after polymkeric substance solidifies fully, generate larger adhesion on mould and polymer interface, the demoulding needs larger knockout press, and the defective that is easy to adhere to), and after pressure discharges fully, solidify fully, be conducive to the raising of complex precision, as shown in Fig. 3 f.
(4) knockout course
1. close the auxiliary force of impression of electric field 11 and gas, the little movement that makes progress of eindruckwerk 8 band moving platens 4, at first destroy the feature structure layer 403 of template 4 and the adhesion of the horizontal contact interface 1301 of stamping structure 301 (polymkeric substance after curing) and vertical contact interface 1302, large tracts of land interface contact adhesion is the chief component of knockout press), mould and the stamping structure of " one-step solidification " are separated from each other, under the complete release conditions of force of impression, then regelate or rear curing (post-curing) processing are carried out in the stamping structure 301 of " one-step solidification ", reach fully and to solidify (purpose of twice curing: the one, after avoiding solidifying fully, liquid organic polymer 3 produces larger adhesion with template 4, be unfavorable for the demoulding, the 2nd, before solidifying fully, discharge in advance the distortion of stamping structure, improve the quality of coining pattern).As shown in Fig. 3 g;
2. after solidifying fully fully, " opening " formula of employing release method is (because adopt flexible thin film type template 4, at first knockout course template 4 is inevitable is separated from periphery and stamping structure, increase along with hoisting depth, the demoulding is expanded to the centre), (mainly overcome the friction force of polymkeric substance and mold interface sidewall 1302) and can realize being separated from each other gradually of template 4 and coining pattern 302 under very little knockout press effect, complete the demoulding, as shown in Fig. 3 h;
3. template 4 is with after stamping structure 302 separates fully, and eindruckwerk 8 band moving platens 4 move upward fast, return to the impression original position, in order to change substrate 2, begin working cycle next time, as shown in Fig. 3 i.
(5) last handling process
Anisotropic etch process (for example RIE) equal proportion by routine is etching down, removes residual layer 303, copies the micro-nano feature structure of mould on resist, as shown in Fig. 3 j.
Follow-up in conjunction with etching technics (wet etching or ICP etching), take the resist figure as mask, feature pattern is transferred on GaN base LED substrate 2, realize the graphical or photonic crystal LED manufacturing of LED substrate 2.
The present embodiment 1 electric field adopts alternating voltage, the frequency 10Hz of voltage, the big or small 200V of voltage.
Working pressure in moulding process is 500mbar.
Described one-step solidification time 10s, the time 30s of regelate.
For non-conductive substrate, need to first deposit one deck conductive layer on substrate, such as metallic nickel, chromium, ITO etc., this layer be the double hard mask layer (Hard Mask) of doing the figure transfer simultaneously.The present embodiment 2 is patterned into example with Sapphire Substrate, and at first deposition layer of metal nickel conductive layer 201 on Sapphire Substrate 2, carry out the patterned concrete technology step of Sapphire Substrate as shown in Figure 4 based on apparatus of the present invention and method subsequently, comprising:
(1) preprocessing process
The liquid organic polymer 3 of spin coating one deck, be placed on worktable 1 on the Sapphire Substrate 2 of plated metal nickel.Template 4 is adsorbed on bottom surface at valve plate 5 by vacuum mode; And template 4 and Sapphire Substrate 2 are aligned.As shown in Fig. 4 a.
(2) moulding process
1. eindruckwerk 8 band moving platens 42 move from initial station to Sapphire Substrate, and opening pressure pipeline 10, pass into pressurized air to gas chamber 6 simultaneously.Eindruckwerk 8 moves to Sapphire Substrate 2 with the speed of fast feed, in case the minimum point 40301 of film-form dual-layer composite soft mold feature structural sheet 403 contacts with the liquid organic polymer 3 on Sapphire Substrate 2, eindruckwerk 8 changes work speed into, as shown in Fig. 4 b;
2. advance under the combined action of force of impression 801 at the auxiliary force of impression 1001 of gas and the small work of eindruckwerk 8, film-form template 4 is shakeout on the liquid organic polymer 3 that spreads over Sapphire Substrate 2 gradually, and making template 4 and the liquid organic polymer 3 on Sapphire Substrate 2, complete homogeneity is conformal contacts, as shown in Fig. 4 c;
3. (template 4 ends are for anodal to apply electric field 11 between the support conductive layer 401 (the PET film of electrically conducting transparent) of template 4 and Sapphire Substrate 2 conductive layers 201, Sapphire Substrate conductive layer 201 ends are negative pole), under the effect of extra electric field 11, form " fluid dielectrophoresis " and " class Jie powers on wetting ", make liquid organic polymer 3 and the interfacial characteristics of template 4 change infiltration into by non-infiltration, and the lifting force that under the effect of fluid dielectrophoretic force, the liquid polymerization deposits yields is made progress, drive liquid organic polymer 3 Fast Filling of 40302 in template 4 feature structure layer 403 nanostructured cavity, the average height of filling depends on the balance of fluid dielectrophoretic force and gaseous pressure and polymeric rheology resistance, as shown in Fig. 4 d,
4. continue to increase the auxiliary force of impression of gas, realize 40302 the complete filling in template 4 feature structure layer 403 nanostructured cavity of liquid organic polymer 3, and residual layer is thinned to predetermined thickness, as shown in Fig. 4 e.
(3) one-step solidification process
Open ultraviolet source 7 (LED lamp array), ultraviolet light sees through template 4 liquid towards organic polymer 3 exposures, makes it " one-step solidification ", completes the typing of polymer nanocomposite structure." one-step solidification " helps the demoulding (after polymkeric substance solidifies fully, generate larger adhesion on template 4 and liquid organic polymer 3 interfaces, the demoulding needs larger knockout press, and the defective that is easy to adhere to), and after pressure discharges fully, solidify fully, be conducive to the raising of complex precision, as shown in Fig. 4 f.
(4) knockout course
1. close the auxiliary force of impression of electric field 11 and gas, the little movement that makes progress of eindruckwerk 8 band moving platens 4, at first destroy the adhesion of template 4 feature structure layers 40302 and the horizontal contact interface 1301 of stamping structure (polymkeric substance after curing) and vertical contact interface 1302, large tracts of land interface contact adhesion is the chief component of knockout press), template 4 and the stamping structure of " one-step solidification " are separated from each other, under the complete release conditions of force of impression, then the structure 1 of " one-step solidification " is carried out regelate or rear curing (post-curing) processing, reach fully and to solidify (purpose of twice curing: the one, after avoiding solidifying fully, liquid organic polymer 3 produces larger adhesion with template 4, be unfavorable for the demoulding, the 2nd, before solidifying fully, discharge in advance the distortion of stamping structure, improve the quality of coining pattern).As shown in Fig. 4 g;
2. after stamping structure 302 solidifies fully fully, " opening " formula of employing release method is (because adopt flexible thin film type template 4, at first knockout course template 4 is inevitable is separated from periphery and stamping structure, increase along with hoisting depth, the demoulding is expanded to the centre), (mainly overcome the friction force of polymkeric substance and mold interface sidewall 1302) and can realize being separated from each other gradually of template 4 and coining pattern under very little knockout press effect, complete the demoulding, as shown in Fig. 4 h; 3. template 4 is with after stamping structure 302 separates fully, and eindruckwerk 8 band moving platens 4 move upward fast, return to the impression original position, in order to change Sapphire Substrate 2, begin working cycle next time, as shown in Fig. 4 i.
(5) last handling process
Anisotropic etch process (for example RIE) equal proportion by routine is etching down, removes residual layer 303, copies the micro-nano feature structure of mould on resist, as shown in Fig. 4 j.
Follow-up in conjunction with etching technics (wet etching or ICP etching), take the resist figure as mask, feature pattern is transferred on the conductive layer 201 of Sapphire Substrate, and take conductive layer nickel 201 as hard mask layer, feature structure is transferred on Sapphire Substrate, remove resist and conductive layer, realize Sapphire Substrate 2 nano patternings.
The present embodiment 2 electric fields adopt alternating voltage, the frequency 10Hz of voltage, the big or small 250V of voltage.
Working pressure in moulding process is 600mbar.
Described one-step solidification time 15s, the time 30s of regelate.
In addition, those skilled in the art also can do other variation in spirit of the present invention.Certainly, the variation that these are done according to spirit of the present invention all should be included in the present invention's scope required for protection.
Claims (4)
1. device that is applicable to non-smooth substrate wafer level nano impression, it comprises: the substrate of worktable, conduction, liquid organic polymer, template, valve plate, gas chamber, ultraviolet source, eindruckwerk, vacuum line, pressure piping, electric field; Wherein, being coated with the full wafer substrate that is covered with liquid organic polymer is fixed on worktable; Template is adsorbed on the bottom surface of valve plate by vacuum line, valve plate is fixed on the bottom surface of gas chamber, and ultraviolet source is fixed on the end face of gas chamber; Eindruckwerk is connected with gas chamber; Pressure piping is connected with the air intake opening of gas chamber; Described template comprises support conductive layer and feature structure layer, is provided with electric field between support conductive layer and substrate; Also has the nanostructured chamber on the feature structure layer;
It is characterized in that the high resiliency film-form PET material that described support conductive layer is electrically conducting transparent; Described feature structure layer is utmost point low-surface-energy, hard, high-k, transparent fluoropolymer material.
2. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 1, is characterized in that, described support conductive layer carries out surface modification treatment, perhaps applies the coupling agent material of layer of transparent.
3. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 1 or 2, is characterized in that, described feature structure layer thickness is the 10-50 micron, and supporting conductive layer thickness is the 100-200 micron.
4. the device that is applicable to non-smooth substrate wafer level nano impression as claimed in claim 1, is characterized in that, described electric field is take the template end as anodal, and substrate terminal is negative pole; Electric field adopts alternating voltage, the frequency 5-30Hz of voltage, the big or small 50-380V of voltage.
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| EP3134771B1 (en) * | 2014-04-22 | 2019-08-28 | Ev Group E. Thallner GmbH | Method and device for embossing a nanostructure |
| CN104122747A (en) * | 2014-08-08 | 2014-10-29 | 青岛理工大学 | Electroosmosis driving nanoimprint device and working method thereof |
| CN104898371A (en) * | 2015-06-25 | 2015-09-09 | 河海大学常州校区 | Nano-imprinting easy demoulding method |
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| CN111724676B (en) * | 2019-03-21 | 2022-09-02 | 昆山工研院新型平板显示技术中心有限公司 | Stretchable wire, manufacturing method thereof and display device |
| CN113189840A (en) * | 2021-04-16 | 2021-07-30 | 深圳先进技术研究院 | Micro-nano structure manufacturing method and micro-nano structure manufacturing device |
| CN114656133B (en) * | 2022-05-23 | 2022-08-26 | 山东大学 | Anti-adhesion and anti-attrition ultra-precise mold, machining system and method |
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