CN102201402A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN102201402A
CN102201402A CN2010101951608A CN201010195160A CN102201402A CN 102201402 A CN102201402 A CN 102201402A CN 2010101951608 A CN2010101951608 A CN 2010101951608A CN 201010195160 A CN201010195160 A CN 201010195160A CN 102201402 A CN102201402 A CN 102201402A
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heating panel
lead terminal
semiconductor chip
power semiconductor
lead
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志贺利贵
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Abstract

本发明提供半导体装置。其课题在于得到提高了散热性的高可靠性半导体装置。在第1散热板(31)的主面上安装功率半导体芯片(第1半导体芯片)(41)，在第2散热板(32)的主面上安装控制用IC芯片(第2半导体芯片)(42)。第1散热板(31)具有延伸部(31A)，该延伸部(31A)在第1引线端子(引线端子21～24)的排列方向上，朝设置第2散热板(32)的一侧延伸。第1引线端子(引线端子21～24)连结在第1散热板(31)的第1侧面上，作为功率半导体芯片(41)的背面电极(D：漏电极)的引出电极发挥功能。第2引线端子(引线端子25)与作为源电极(S)的焊盘(411)连接。第3引线端子(引线端子26～28)与控制用IC芯片(42)的电极连接。

Description

半导体装置
技术领域
本发明涉及将进行大功率动作的功率半导体芯片以及对其进行控制的控制用半导体芯片一起安装到引线框上、并内置在封装中的半导体装置的构造。
背景技术
进行大电流开关动作和整流的功率半导体元件(整流用二极管、功率MOSFET、IGBT等)在工作中的发热量很大。因此，对于将这样的功率半导体元件内置在塑封材料中的功率半导体模块，希望其具有很高的散热功率。
例如在专利文献1等中对这样的功率半导体模块进行了记载。一般情况下，在这样的功率半导体模块中，使用由散热板和引线端子(引线)构成的引线框，并将功率半导体芯片安装在该散热板上。用由树脂构成的塑封(mold)材料对上述构造进行密封，固化后的该塑封材料成为封装。引线框由导热率高的铜等形成。另外，构成引线框的一部分的引线端子采用从塑封材料突出的方式。使用键合线(bonding wire)等，将功率半导体芯片的电极与构成电信号的输入输出端子的各引线连接。功率半导体芯片根据从外部施加在各引线上的电压而工作。在实际中，该结构的功率半导体模块是通过将各引线***到印制基板上形成的通孔中并进行焊接来使用的。或者，还可以采用这样的方式，即：不仅各引线从塑封材料突出，而且在塑封材料的背面，使散热板露出。在该情况下，有时背面的散热板自身也被焊接到印制基板上来使用。
这里，塑封材料的导热率与引线框相比，不是很高。因此，为了提高上述散热效率，重要的是如何经由引线框将从功率半导体芯片发出的热量释放到外部。即，从功率半导体芯片发出的热量或者经由从塑封材料引出的引线或散热板直接释放到外部，或者经由塑封材料间接释放到外部。
专利文献1：日本特许3250213号公报
但是，在功率半导体模块中，有时混合安装有功率半导体芯片和控制用IC。在这样的情况下，有时功率半导体芯片发出的热量进行传递而导致控制用IC的温度上升，致使性能显著劣化。因此，有时功率半导体芯片的温度上升被传递给控制用IC芯片等，从而导致功率半导体模块无法再进行正确的工作。专利文献1中，控制用IC和功率半导体芯片被安装在同一引线框上，从散热的角度来看，是散热不充分的结构。即，在现有技术中，不能很好地将来自功率半导体芯片的发热量引导至外部，从而会导致控制用IC芯片等的温度上升，很难得到高可靠性的功率半导体模块。而且，用于引出从功率半导体芯片输出的高电压的端子与用于引出从控制用IC输出的低电压的端子被并行地引出，因此，在耐压方面也存在问题。
因此，难以得到提高了散热性的高可靠性的半导体装置。
发明内容
本发明正是鉴于这样的问题而完成的，其目的在于提供解决上述问题的发明。
为了解决上述课题，本发明采用下述结构。
本发明的半导体装置具有：第1散热板；与该第1散热板分离配置的第2散热板；多个第1引线端子，其配置在所述第1散热板的第1侧面侧；第2引线端子，其配置在所述第1散热板的位于所述第1侧面相反侧的第2侧面侧；第3引线端子，其配置在所述第2侧面侧的、比所述第2引线端子更靠近所述第2散热板的一侧；第1半导体芯片，其安装在所述第1散热板的主面上，具有1对主电极；第2半导体芯片，其安装在所述第2散热板的主面上；以及塑封材料，其覆盖所述第1散热板、所述第2散热板、所述第1引线端子的一部分、所述第2引线端子的一部分、所述第3引线端子的一部分、所述第1半导体芯片以及所述第2半导体芯片，所述第1引线端子与所述第2引线端子及所述第3引线端子分别从所述塑封材料的1对侧面向彼此相反的方向引出，该半导体装置的特征在于，所述第1散热板具有延伸部，该延伸部在所述第1引线端子的排列方向上，向设置所述第2散热板的一侧延伸，所述多个第1引线端子中的至少一部分连结在所述第1散热板上，所述第1半导体芯片的一个主电极与所述第1引线端子连接，所述第1半导体芯片的另一个主电极与所述第2引线端子连接，所述第2半导体芯片的电极与所述第3引线端子连接。
本发明的半导体装置的特征在于，在所述第2半导体芯片中安装有温度传感器。
本发明的半导体装置的特征在于，所述第1半导体芯片在背面侧具有一个主电极，在上表面侧具有另一个主电极，所述一个主电极与所述第1散热板电连接，所述多个第1引线端子连结在所述第1散热板上，作为所述一个主电极的引出电极，由所述第1半导体芯片和所述第2半导体芯片构成的电路中的最大电压被施加在所述第1引线端子与所述第2引线端子之间。
本发明的半导体装置的特征在于，所述延伸部以如下方式进行配置：该延伸部在沿着所述第1散热板的所述第1侧面的方向上，至少延伸到所述第2半导体芯片的离所述第1散热板最远的边所处的位置处，且在该延伸部与所述第2散热板之间隔有间隙。
本发明的半导体装置的特征在于，包含所述延伸部的所述第1散热板形成得比所述第1引线端子、所述第2引线端子以及所述第3引线端子厚。
由于本发明按以上方式构成，因此能够得到提高了散热性的高可靠性半导体装置。
附图说明
图1是示出本发明的实施方式的半导体装置的结构的、从上面观察的透视图。
图2是示出本发明的实施方式的半导体装置的外观的立体图。
图3是在本发明的实施方式的半导体装置制造中使用的金属图案的平面图。
图4是在本发明的实施方式的半导体装置中构成的电路图的一例。
标号说明
10功率半导体模块(半导体装置)；11封装；21～24第1引线端子(引线端子)；25第2引线端子(引线端子)；26～28第3引线端子(引线端子)；31散热板(第1散热板)；31A延伸部；32散热板(第2散热板)；41功率半导体芯片(第1半导体芯片)；42控制用IC芯片(第2半导体芯片)；50键合线；311、321引线框固定杆；411、412、421～425键合焊盘；428温度传感器。
具体实施方式
下面，作为本发明的实施方式的半导体装置，对功率半导体模块进行说明。在该功率半导体模块中，形成了如下形式的引线框组装体：将功率半导体芯片和控制用IC芯片分别安装在独立的散热板上，并与多个引线端子组合在一起。以引线框组装体被塑封材料包围的方式，构成功率半导体模块(半导体装置)。
图1是从上侧观察该功率半导体模块(半导体装置)10的透视图。这里，图中被虚线围住的区域对应于塑封材料。在塑封材料外侧，分别沿相反方向，从其一个侧面引出4个引线端子21～24，从另一个侧面引出4个引线端子25～28。在该功率半导体模块10中，功率半导体芯片(第1半导体芯片)进行大功率的开关动作，控制用IC芯片(第2半导体芯片)对该功率半导体芯片进行控制。
另外，图2是该功率半导体模块10的外观立体图。如图所示，功率半导体模块10对从塑封材料引出的引线端子实施了引线成形(弯折加工)，各引线端子的前端部可***到印制基板上的通孔中，而且可通过焊接固定到印制基板上。
在该功率半导体模块10中，使用了彼此分离地形成的第1散热板31和第2散热板32。其中，在第1散热板31的主面上安装着功率半导体芯片(第1半导体芯片)41，在第2散热板32的主面上安装着控制用IC芯片(第2半导体芯片)42。与控制用IC芯片42相比，功率半导体芯片41会产生更大的发热，为了提高其散热效果，第1散热板31的面积形成得比第2散热板32的面积更大。在控制用IC芯片42中，形成有测量其温度的温度传感器428。
这里使用的引线端子21～28在其功能上可划分为第1引线端子(引线端子21～24)、第2引线端子(引线端子25)以及第3引线端子(引线端子26～28)。
第1散热板31具有延伸部31A，该延伸部31A在第1引线端子(引线端子21～24)的排列方向上，向设置第2散热板32的一侧延伸。因此，在图1中，第2散热板32的作为外周部的边c、边d靠近于第1散热板31的边a、边b并与它们相对。为了使温度传感器428检测到的温度接近于功率半导体芯片41的温度，边c与边a、边d与边b的间隔例如优选为0.15mm～0.9mm。
第1散热板31以及第2散热板32由能够得到期望的机械强度和散热效果的厚度的铜或铜合金、铁或铁合金、铝或铝合金等构成。另外，第1散热板31、第2散热板32以及延伸部31A可以比引线端子21～24、25～28厚。具体而言，优选的是，第1散热板31、第2散热板32以及延伸部31A由0.25mm至1.0mm的厚度构成，引线端子21～24、25～28由0.25mm至0.75mm的厚度构成。铜或铜合金、铁或铁合金、铝或铝合金等具有远高于构成塑封材料的环氧树脂等的导热率，因此，能够使功率半导体芯片41在工作时发出的热量经由散热板而从引线端子释放出。
在制造该功率半导体模块10的时候，使用由功率半导体模块10的多个散热板和引线端子排列而成的、图3所示的金属框。在将功率半导体芯片41、控制用IC芯片42等安装在该金属框的各散热板上而成为排列着多个引线框组装体的状态之后，在与各功率半导体模块对应的场所形成塑封材料，沿着划分多个功率半导体模块的边界部(图3中用虚线表示的场所)，切断金属框，由此得到了图1的功率半导体模块10。这里，为了将第1散热板31以及第2散热板32固定在金属框上，设置了固定杆311、321，但这些固定杆在功率半导体模块10的制造过程中将被去除。该制造方法本身与在引线框上安装半导体芯片的方式的半导体模块的通常公知的制造方法相同。
这里，功率半导体芯片(第1半导体芯片)41是以被施加高电压、流过大电流的方式工作的半导体元件，例如是整流用二极管、功率-MOSFET、IGBT(Insulated Gate Bipolar Transistor，绝缘栅型双极晶体管)等。功率半导体芯片(第1半导体芯片)41的一个主面经由导电性粘接材料(未图示)与第1散热板31电连接，在另一主面上设有多个键合焊盘(电极)411、412。
控制用IC芯片(第2半导体芯片)42是构成控制功率半导体芯片41的电路的IC，在其上表面上，与功率半导体芯片41同样设有键合焊盘421、423、424、425。另外，在其内部形成有控制电路和温度传感器
(温度感测元件)428。温度传感器428以电学方式感测功率半导体芯片41的温度，并将其输出到控制电路。在功率半导体芯片41的温度比其正常工作时的温度大的情况下，控制电路的功能是控制功率半导体芯片41的动作。在本发明中，延伸部31A向设置第2散热板32的一侧延伸。因此，利用间隙来分离第1散热板31发出的热量，由此，能够防止控制用IC芯片42因过热而发生误动作。另一方面，以安装着功率半导体芯片41的第1散热板31(延伸部31A)将控制用IC芯片42的温度传感器428围住的方式进行配置，因此，能够可靠地将温度传递到温度传感器428，从而能够使温度传感器428可靠地感测温度。
通过在形成于功率半导体芯片41、控制用IC芯片42的上表面上的引线焊盘上连接键合线来与功率半导体芯片41、控制用IC芯片42进行电连接。在图1中，利用键合线50，将功率半导体芯片41的键合焊盘411(源电极)与第2引线端子(引线端子25)之间、功率半导体芯片41的键合焊盘411与控制用IC芯片42的键合焊盘422之间、以及功率半导体芯片41的键合焊盘412(栅电极)与控制用IC芯片42的键合焊盘421之间电连接。并且，利用键合线50，将控制用IC芯片42的键合焊盘423、425与第3引线端子(引线端子26、28)之间电连接。而且，利用键合线50，将控制用IC芯片42的键合焊盘424与第2散热板32之间电连接。在功率半导体芯片41的背面(与设有焊盘411等的面相反侧的面)上设有漏电极，该漏电极经由导电性粘接材料而固定在第1散热板31的上表面上。
图4示出了使用该功率半导体模块10来实现的电源电路(例如，待机用电源电路)的一例。在实现图4的电源电路的功率半导体模块10中，功率半导体芯片41的工作电流在作为1对主电极的漏极(D)与源极(S)之间流动。因此，通常工作时施加给该电源电路的最高电压是施加在D-S之间。并且，通过来自控制用IC芯片42的输出信号(栅极信号)来控制该工作电流的通断。用于使控制用IC芯片42工作的电源电压输入端子为Vcc，控制信号输入端子为FB。最终，对右上方标记的负载施加输出电压Vo。因此，在该功率半导体模块10中，需要D、S、Vcc、FB、GND(接地)这5个端子，这些端子被分配给所述各引线端子。
在该功率半导体模块10中，沿着第1散热板31的第1侧面(一方的侧面：在图1中为右侧面)，彼此并行地配置第1引线端子(引线端子21～24)。另一方面，在第1散热板31的位于第1侧面相反侧的第2侧面(另一方的侧面：在图1中为左侧面)的一侧，配置第2引线端子(引线端子25)。另外，在形成第2引线端子的一侧(第2侧面侧)的靠近于第2散热板32的一侧，配置第3引线端子(引线端子26～28)。
这里，第1引线端子(引线端子21～24)连结在第1散热板31的第1侧面上，作为固定在第1散热板31上表面上的功率半导体芯片41的背面电极(D：漏电极：一个主电极)的引出电极发挥功能。第2引线端子(引线端子25)与作为源电极(S：另一个主电极)的键合焊盘411连接。第3引线端子(引线端子26～28)与控制用IC芯片42的电极(Vcc、GND、FB)连接。并且，第2引线端子和第3引线端子均与第1散热板31分离。其中，引线端子27连结在第2散热板32上，作为接地端子发挥功能。
如上所述，在图1的功率半导体模块10中，最高电压被施加在功率半导体芯片41的DS(漏-源)之间。即，电路工作时，在第1引线端子(引线端子21～24)与第2引线端子25之间产生最大的电位差。因此，在该功率半导体模块10中构成为，与D端子连接的引线端子21～24和与S端子连接的引线端子25，之间隔着第1散热板31而分别被配置在相反侧。即，产生大电位差的一方的引线端子21～24集中配置在第1散热板31的第1侧面侧，产生大电位差的另一方的引线端子25配置在第1散热板31的第2侧面侧。并且，引线端子25与和其邻接的引线端子26之间的电位差远小于引线端子25与引线端子21～24之间的电位差。作为结果，在图1的功率半导体模块10中，能够确保产生大电位差的引线端子之间有足够大的间隔，能够稳定地实现高耐压化。
另外，在图1中，第1散热板31的形成在第1侧面与第2侧面之间的边a靠近于第2散热板32的边c且与其相对。另外，第1散热板31的构成延伸部31A的边b靠近于第2散热板32的边d且与其现对。引线端子23、24连结在延伸部31A的第1侧面侧。另外，作为延伸部31A的前端部的边e与第2散热板32的位于边c相反侧的边f大致处于同一直线上。利用这样的结构，能够提高功率半导体芯片41的散热效率，且能够使控制用IC芯片42更准确地检测温度上升。
不过，作为延伸部31A的前端部的边e不是必须与第2散热板32的边f处于同一直线上。例如，只要采用如下方式配置延伸部31A，即可起到相同的效果，即：延伸部31A在沿着第1散热板31的第1侧面(右侧面)的方向上，至少延伸到控制用IC芯片42的离第1散热板31最远的边所处的位置处，且在延伸部31A与第2散热板32之间隔开间隙。
经由第1散热板31来进行功率半导体芯片41的散热。这里，在图1的功率半导体模块10中，由于在该第1散热板31上设有延伸部31A，因此，能够经由第1散热板31，将从功率半导体芯片41发出的热量高效地释放到外部。即，通过在第1散热板31上形成延伸部31A，能够增大作为功率半导体芯片41的散热器发挥功能的第1散热板31的面积。因此，能够利用第1散热板31良好地吸收来自功率半导体芯片41的过渡性的放热等，并通过塑封材料等将其很好地释放到外部。另外，连结在第1散热板31上的第1引线端子(引线端子21～24)延伸到塑封材料的外部，具有将从功率半导体芯片41发出的热量导出到外部的功能。特别是在延伸部31A上还连结有作为第1引线端子的引线端子23、24，因此，能够使传递到延伸部31A的热量经由该引线端子而释放到外部。因此，能够实现散热性良好的半导体模块。
另外，在图1的结构中，引线端子的结构为左右对称，在右侧面设置了4个引线端子，不过，也可以采用左右设有不同个数的引线端子的非对称结构。另外，在第1引线端子的个数很多的情况下，不一定要将所有的第1引线端子均连结在第1散热板上。
另外，在上述例子中，分别在各散热板上安装了功率半导体芯片和控制用IC芯片，但也可以同时将其它芯片安装在各散热板上。在该情况下，优选将工作时发热量大的芯片安装在第1散热板上，将发热量小的芯片安装在第2散热板上。

Claims (5)

1.一种半导体装置，该半导体装置具有：
第1散热板；
与该第1散热板分离配置的第2散热板；
多个第1引线端子，其配置在所述第1散热板的第1侧面侧；
第2引线端子，其配置在所述第1散热板的位于所述第1侧面相反侧的第2侧面侧；
第3引线端子，其配置在所述第2侧面侧的、比所述第2引线端子更靠近所述第2散热板的一侧；
第1半导体芯片，其安装在所述第1散热板的主面上，具有1对主电极；
第2半导体芯片，其安装在所述第2散热板的主面上；以及
塑封材料，其覆盖所述第1散热板、所述第2散热板、所述第1引线端子的一部分、所述第2引线端子的一部分、所述第3引线端子的一部分、所述第1半导体芯片以及所述第2半导体芯片，
所述第1引线端子与所述第2引线端子及所述第3引线端子分别从所述塑封材料的1对侧面向彼此相反的方向引出，
该半导体装置的特征在于，
所述第1散热板具有延伸部，该延伸部在所述第1引线端子的排列方向上，向设置所述第2散热板的一侧延伸，
所述多个第1引线端子中的至少一部分连结在所述第1散热板上，
所述第1半导体芯片的一个主电极与所述第1引线端子连接，所述第1半导体芯片的另一个主电极与所述第2引线端子连接，所述第2半导体芯片的电极与所述第3引线端子连接。
2.根据权利要求1所述的半导体装置，其特征在于，
在所述第2半导体芯片中安装有温度传感器。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述第1半导体芯片在背面侧具有一个主电极，在上表面侧具有另一个主电极，
所述一个主电极与所述第1散热板电连接，所述多个第1引线端子连结在所述第1散热板上，作为所述一个主电极的引出电极，
由所述第1半导体芯片和所述第2半导体芯片构成的电路中的最大电压被施加在所述第1引线端子与所述第2引线端子之间。
4.根据权利要求2或3所述的半导体装置，其特征在于，
所述延伸部以如下方式进行配置：该延伸部在沿着所述第1散热板的所述第1侧面的方向上，至少延伸到所述第2半导体芯片的离所述第1散热板最远的边所处的位置处，且在该延伸部与所述第2散热板之间隔有间隙。
5.根据权利要求2至4中任意一项所述的半导体装置，其特征在于，
包含所述延伸部的所述第1散热板形成得比所述第1引线端子、所述第2引线端子以及所述第3引线端子厚。
CN2010101951608A 2010-03-23 2010-05-31 半导体装置 Pending CN102201402A (zh)

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