CN102156386A - 正型放射线敏感性组合物、层间绝缘膜及其形成方法 - Google Patents

正型放射线敏感性组合物、层间绝缘膜及其形成方法 Download PDF

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Publication number
CN102156386A
CN102156386A CN2010105998586A CN201010599858A CN102156386A CN 102156386 A CN102156386 A CN 102156386A CN 2010105998586 A CN2010105998586 A CN 2010105998586A CN 201010599858 A CN201010599858 A CN 201010599858A CN 102156386 A CN102156386 A CN 102156386A
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CN
China
Prior art keywords
compound
positive radiation
radiation line
sensitive compositions
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010105998586A
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English (en)
Chinese (zh)
Inventor
一户大吾
花村政晓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of CN102156386A publication Critical patent/CN102156386A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0223—Iminoquinonediazides; Para-quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN2010105998586A 2009-12-16 2010-12-14 正型放射线敏感性组合物、层间绝缘膜及其形成方法 Pending CN102156386A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009285791 2009-12-16
JP2009-285791 2009-12-16

Publications (1)

Publication Number Publication Date
CN102156386A true CN102156386A (zh) 2011-08-17

Family

ID=44401021

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010105998586A Pending CN102156386A (zh) 2009-12-16 2010-12-14 正型放射线敏感性组合物、层间绝缘膜及其形成方法

Country Status (4)

Country Link
JP (1) JP5659714B2 (ko)
KR (1) KR20110068924A (ko)
CN (1) CN102156386A (ko)
TW (1) TWI489203B (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156860A (en) * 1997-02-18 2000-12-05 Dainippon Ink And Chemicals, Inc. Surface active agent containing fluorine and coating compositions using the same
CN1445315A (zh) * 2002-01-24 2003-10-01 捷时雅株式会社 一种制备绝缘膜和显示器的射线敏感组合物
WO2009028360A1 (ja) * 2007-08-24 2009-03-05 Toray Industries, Inc. 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562599B2 (ja) * 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物
JP4055217B2 (ja) * 1997-02-18 2008-03-05 大日本インキ化学工業株式会社 フッ素系界面活性剤及びそれを使用した組成物
JP2000102727A (ja) * 1998-09-29 2000-04-11 Dainippon Ink & Chem Inc フッ素系界面活性剤及びその組成物
JP2001269564A (ja) * 2000-03-27 2001-10-02 Dainippon Ink & Chem Inc フッ素系界面活性剤及びその組成物
JP3800513B2 (ja) * 2001-12-13 2006-07-26 富士写真フイルム株式会社 画像形成材料
JP2004002733A (ja) * 2002-03-28 2004-01-08 Dainippon Ink & Chem Inc コーティング用組成物
JP4586655B2 (ja) * 2005-07-05 2010-11-24 東レ株式会社 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
KR101428718B1 (ko) * 2007-02-02 2014-09-24 삼성디스플레이 주식회사 감광성 유기물, 이의 도포 방법, 이를 이용한 유기막 패턴형성 방법, 이로써 제조되는 표시 장치
JP2008249867A (ja) * 2007-03-29 2008-10-16 Fujifilm Corp 感光性樹脂組成物、感光性転写材料、離画壁及びその形成方法、カラーフィルタ及びその製造方法、並びに表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156860A (en) * 1997-02-18 2000-12-05 Dainippon Ink And Chemicals, Inc. Surface active agent containing fluorine and coating compositions using the same
CN1445315A (zh) * 2002-01-24 2003-10-01 捷时雅株式会社 一种制备绝缘膜和显示器的射线敏感组合物
WO2009028360A1 (ja) * 2007-08-24 2009-03-05 Toray Industries, Inc. 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子

Also Published As

Publication number Publication date
JP5659714B2 (ja) 2015-01-28
JP2011145653A (ja) 2011-07-28
TW201129863A (en) 2011-09-01
TWI489203B (zh) 2015-06-21
KR20110068924A (ko) 2011-06-22

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Application publication date: 20110817