TW201129863A - Positive radiation-sensitive composition, interlayer insulation film, and method for producing the same - Google Patents

Positive radiation-sensitive composition, interlayer insulation film, and method for producing the same

Info

Publication number
TW201129863A
TW201129863A TW099144134A TW99144134A TW201129863A TW 201129863 A TW201129863 A TW 201129863A TW 099144134 A TW099144134 A TW 099144134A TW 99144134 A TW99144134 A TW 99144134A TW 201129863 A TW201129863 A TW 201129863A
Authority
TW
Taiwan
Prior art keywords
sensitive composition
positive radiation
insulation film
interlayer insulation
producing
Prior art date
Application number
TW099144134A
Other languages
Chinese (zh)
Other versions
TWI489203B (en
Inventor
Daigo Ichinohe
Masaaki Hanamura
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201129863A publication Critical patent/TW201129863A/en
Application granted granted Critical
Publication of TWI489203B publication Critical patent/TWI489203B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0223—Iminoquinonediazides; Para-quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

The object of the present invention is to provide a polysiloxane-based positive radiation-sensitive composition which is capable of forming an interlayer insulation film having high evenness without coating unevenness. A positive radiation-sensitive composition comprises [A] a polysiloxane polymer, [B] a quinine diazide compound and [C] a copolymer of polymeric unsaturated compound comprising (c1) a compound represented by following formula (1) and (c2) a compound represented by following formula (2) and (c3) a polymeric unsaturated compound having a group represented by following formula (3).
TW099144134A 2009-12-16 2010-12-16 Positive radiation-sensitive composition, interlayer insulation film, and method for producing the same TWI489203B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009285791 2009-12-16

Publications (2)

Publication Number Publication Date
TW201129863A true TW201129863A (en) 2011-09-01
TWI489203B TWI489203B (en) 2015-06-21

Family

ID=44401021

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099144134A TWI489203B (en) 2009-12-16 2010-12-16 Positive radiation-sensitive composition, interlayer insulation film, and method for producing the same

Country Status (4)

Country Link
JP (1) JP5659714B2 (en)
KR (1) KR20110068924A (en)
CN (1) CN102156386A (en)
TW (1) TWI489203B (en)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3562599B2 (en) * 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 Photoresist composition
US6156860A (en) * 1997-02-18 2000-12-05 Dainippon Ink And Chemicals, Inc. Surface active agent containing fluorine and coating compositions using the same
JP4055217B2 (en) * 1997-02-18 2008-03-05 大日本インキ化学工業株式会社 Fluorine surfactant and composition using the same
JP2000102727A (en) * 1998-09-29 2000-04-11 Dainippon Ink & Chem Inc Fluorine based surfactant and its composition
JP2001269564A (en) * 2000-03-27 2001-10-02 Dainippon Ink & Chem Inc Fluorine containing surfactant and its composition
JP3800513B2 (en) * 2001-12-13 2006-07-26 富士写真フイルム株式会社 Image forming material
TWI273352B (en) * 2002-01-24 2007-02-11 Jsr Corp Radiation sensitive composition for forming an insulating film, insulating film and display device
JP2004002733A (en) * 2002-03-28 2004-01-08 Dainippon Ink & Chem Inc Coating composition
JP4586655B2 (en) * 2005-07-05 2010-11-24 東レ株式会社 Photosensitive siloxane composition, cured film formed therefrom, and device having cured film
KR101428718B1 (en) * 2007-02-02 2014-09-24 삼성디스플레이 주식회사 Photo-resist composition, coating method thereof, method for patterning of organic film using the same and display device fabricated thereby
JP2008249867A (en) * 2007-03-29 2008-10-16 Fujifilm Corp Photosensitive resin composition, photosensitive transfer material, pixel partition wall and method for forming the same, color filter and method for manufacturing the filter, and display device
WO2009028360A1 (en) * 2007-08-24 2009-03-05 Toray Industries, Inc. Photosensitive composition, cured film formed therefrom, and device having cured film

Also Published As

Publication number Publication date
CN102156386A (en) 2011-08-17
JP5659714B2 (en) 2015-01-28
JP2011145653A (en) 2011-07-28
TWI489203B (en) 2015-06-21
KR20110068924A (en) 2011-06-22

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