CN102130274A - 一种透明荧光陶瓷封装的白光led光源 - Google Patents

一种透明荧光陶瓷封装的白光led光源 Download PDF

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CN102130274A
CN102130274A CN2010105858222A CN201010585822A CN102130274A CN 102130274 A CN102130274 A CN 102130274A CN 2010105858222 A CN2010105858222 A CN 2010105858222A CN 201010585822 A CN201010585822 A CN 201010585822A CN 102130274 A CN102130274 A CN 102130274A
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黄金鹿
缪应明
刁文和
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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Abstract

一种透明荧光陶瓷封装的白光LED光源，由LED芯片、封装基座、支架、电极和透明荧光陶瓷封装材料构成，封装基座和支架组合安装，LED芯片固晶于封装基座固晶区，并由金线连接于正负电极，LED芯片由透明荧光陶瓷材料整体封装，对应于LED芯片透明荧光陶瓷材料由模具定型为突起的曲面出光面；透明荧光陶瓷由荧光粉与透明陶瓷粉体掺杂共烧而成。透明陶瓷相较传统封装材料具有更高的折射率，由此封装的LED光源具有较高的取光效率，同时透明陶瓷在导热系数、稳定性和机械强度方面均优于传统封装材料，透明陶瓷与荧光粉掺杂共烧可实现蓝光LED的白光功能。

Description

一种透明荧光陶瓷封装的白光LED光源
技术领域
本发明涉及一种白光LED光源，确切地讲是一种由透明荧光陶瓷材料封装的白光LED光源。
背景技术
当前，国内外现行的白光LED封装工艺方法有多种，其中“蓝光芯片+荧光粉”封装工艺中，由于环氧树脂具有优良的粘结性、电绝缘性、密封性和介电性能且成本较低、易成型等优点成为LED封装的主流材料。但是随着白光LED亮度和功率的不断提高，对LED的封装材料提出更高的要求，而环氧树脂自身存在的吸湿性、易老化、耐热性差、高温和短波光照下易变色等缺陷暴露了出来，环氧树脂也不易实现与荧光粉的均匀掺杂，从而大大影响和缩短LED器件的性能和使用寿命。为了解决环氧树脂存在的上述问题，有机硅材料由于具有良好的透明性、耐高低温性、耐候性、绝缘性等，受到了国内外研究者的广泛关注，被认为是替代环氧树脂的理想材料。但有机硅作为封装材料也存在一些缺点，有机硅没有解决荧光粉均匀掺杂的问题，有机硅的折射率在1.5左右，与LED芯片的折射率相差较大，不利于光的输出；另外，有机硅虽然较环氧树脂在耐热性、力学性能方面有所提高，但在高温、高腐蚀性等恶劣环境下工作的能力较差。而且由于有机硅的生产工艺较复杂、成本较高，当前市场上的有机硅价格十分昂贵，不利于白光LED的推广及应用。
发明内容
为了克服上述缺陷，本发明提出了一种由高折射率透明陶瓷材料与荧光粉掺杂共烧形成的透明荧光陶瓷封装的高出光率白光LED光源。
本发明为了解决其技术问题所采用的技术方案是：
一种透明荧光陶瓷封装的白光LED光源，由LED芯片、封装基座、支架、电极和透明荧光陶瓷封装材料构成，封装基座和支架组合安装，LED芯片固晶于封装基座固晶区，并由金线连接于正负电极，LED芯片由透明荧光陶瓷材料整体封装，对应于LED芯片透明荧光陶瓷材料由模具定型为突起的曲面出光面；
所述透明荧光陶瓷由荧光粉与透明陶瓷粉体掺杂共烧而成，分为无压烧结工艺和真空热压烧结；
无压烧结工艺：将压制成型和烧结工艺分开进行，先将粉体冷压成型，成型方式选择钢模冷压成型、或铺以冷等静压成型和湿法成型中的一种，之后进行素烧以去除一些添加剂，再在真空、氢气或其他惰性气体条件下进行高温烧结；
真空热压烧结：成型和烧结在同一工序完成，先将粉体放入模具冷压成型，然后将成型样品放入真空热压炉进行热压烧结，所得制品再放入热等静压炉内高温、高压下进行后处理，炉内温度1600-1800℃，氩气条件下压力150-200Mpa，进而提高荧光透明陶瓷的光学性能。
所述封装基座由高导热金属或合金制成，固晶区域为平面或凹凸结构。
所述透明陶瓷选用高纯原料，通过工艺手段排除气孔获得，其折射率大于1.7。
所述曲面出光面为规则弧面出光面或异形曲面出光面。
本发明的技术原理：LED芯片折射率约2-4，如GaN(n＝2.5)及GaP(n＝3.45)均远高于环氧树脂或硅氧烷树脂封装材料折射率(n＝1.40-1.53)，折射率差异过大导致全反射发生，将光线反射回芯片内部而无法有效导出，因此提高封装材料的折射率将可减少全反射的发生。以蓝光芯片/黄色YAG荧光粉的白光LED组件为例，蓝光LED芯片折射率为2.5，当封装材料的折射率从1.5时提升至1.7时，光取出效率提升了近30％；因此，提升封装材料的折射率降低芯片与封装材料间折射率差异来达到提升出光效能。
本发明的有益效果：MgAl2O4透明陶瓷热导率较高(17.0W/m·K)，约为环氧树脂和有机硅的十倍，可以使工作中产生的热量更为及时地传递出去，有利于降低荧光物质的工作温度，延长荧光物质的寿命，有助于降低芯片结温，从而可以提高工作电流，进一步提高LED发光强度。
MgAl2O4透明荧光陶瓷的折射率在1.7左右，比环氧树脂和有机硅有较大提高，有研究表明当封装材料的折射率从1.5时提升至1.7时，光取出效率可提升近30％。
由于透明荧光陶瓷有比环氧树脂和有机硅更高的热导率和折射率，可同时解决散热和高效率问题；由于陶瓷材料有比有机材料更高的强度、硬度、更耐腐蚀，能够大幅度提高LED制品的寿命，并为实现白光LED在高温、高冲击、腐蚀性等恶劣工作环境下长时间工作的使用提供了可能性。
附图说明：
图1为规则弧面出光面LED光源剖视图；
图2为异形曲面出光面LED光源剖视图；
图3为异形曲面出光面LED光源立体图。
附图中所指图例
1、封装基座2、支架3、LED芯片4、电极5、透明荧光陶瓷
具体实施方式
透明荧光陶瓷由荧光粉与透明陶瓷粉体掺杂共烧而成，分为无压烧结工艺和真空热压烧结；
无压烧结工艺：将压制成型和烧结工艺分开进行，先将粉体冷压成型，成型方式选择钢模冷压成型、或铺以冷等静压成型和湿法成型中的一种，之后进行素烧以去除一些添加剂，再在真空、氢气或其他惰性气体条件下进行高温烧结；
真空热压烧结：成型和烧结在同一工序完成，先将粉体放入模具冷压成型，然后将成型样品放入真空热压炉进行热压烧结，所得制品再放入热等静压炉内高温、高压下进行后处理，炉内温度1600-1800℃，氩气条件下压力150-200Mpa，进而提高荧光透明陶瓷的光学性能。
封装基座由高导热金属或合金制成，其底面为导热面，固晶区可设置凹面结构。
透明陶瓷选用高纯原料，通过工艺手段排除气孔获得，其折射率大于1.7。
实施例1：一种透明荧光陶瓷封装的白光LED光源，由封装基座1、支架2、LED芯片3、电极4和透明荧光陶瓷5封装材料构成，封装基座和支架配合安装，LED芯片固晶于封装基座固晶区，并由金线连接于正负电极，LED芯片由透明荧光陶瓷材料整体封装，对应于LED芯片透明荧光陶瓷材料由模具定型为突起的曲面出光面。如图1出光面为规则弧面，规则弧面出光面可用于配光要求不高的场合，对于道路、隧道等照明灯具通常需二次配光才能达到相应要求；结构与传统单颗封装LED光源相似，在结构相仿的情况下将传统树脂材料或有机硅材料换作MgAl2O4透明荧光陶瓷，可有效提高取光效率和散热性能。
实施例2：出光面设置为异形曲面出光面，异形曲面出光面是将二次配光透镜与LED光源一体化设计从而适用于特殊场合的配光要求。如图2、3所示LED光源通过调整曲面形状可实现不同配光要求，如道路照明、隧道照明、以及不对称偏心配光等。

Claims (4)

1.一种透明荧光陶瓷封装的白光LED光源，其特征在于：由LED芯片、封装基座、支架、电极和透明荧光陶瓷封装材料构成，封装基座和支架组合安装，LED芯片固晶于封装基座固晶区，并由金线连接于正负电极，LED芯片由透明荧光陶瓷材料整体封装，对应于LED芯片透明荧光陶瓷材料由模具定型为突起的曲面出光面；
所述透明荧光陶瓷由荧光粉与透明陶瓷粉体掺杂共烧而成，分为无压烧结工艺和真空热压烧结；
无压烧结工艺：将压制成型和烧结工艺分开进行，先将粉体冷压成型，成型方式选择钢模冷压成型、或铺以冷等静压成型和湿法成型中的一种，之后进行素烧以去除一些添加剂，再在真空、氢气或其他惰性气体条件下进行高温烧结；
真空热压烧结：成型和烧结在同一工序完成，先将粉体放入模具冷压成型，然后将成型样品放入真空热压炉进行热压烧结，所得制品再放入热等静压炉内高温、高压下进行后处理，炉内温度1600-1800℃，氩气条件下压力150-200Mpa，进而提高荧光透明陶瓷的光学性能。
2.根据权利要求1所述的一种透明荧光陶瓷封装的白光LED光源，其特征在于：所述封装基座由高导热金属或合金制成，固晶区域为平面或凹凸结构。
3.根据权利要求1所述的一种透明荧光陶瓷封装的白光LED光源，其特征在于：所述透明陶瓷选用高纯原料，通过工艺手段排除气孔获得，其折射率大于1.7。
4.根据权利要求1所述的一种透明荧光陶瓷封装的白光LED光源，其特征在于：所述曲面出光面为规则弧面出光面或异形曲面出光面。
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Cited By (5)

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Publication number Priority date Publication date Assignee Title
CN102324424A (zh) * 2011-09-22 2012-01-18 华南师范大学 一种荧光透明陶瓷透镜封装的白光led
CN102569604A (zh) * 2011-10-27 2012-07-11 深圳市灏天光电有限公司 一种隐脚式大功率led支架及封装结构与封装工艺
US20120178193A1 (en) * 2009-09-30 2012-07-12 Bright Crystals Technology, Inc. Method for manufacturing led with transparent ceramics
CN102951903A (zh) * 2011-08-19 2013-03-06 深圳富泰宏精密工业有限公司 陶瓷体及其制备方法及应用该陶瓷体的电子装置
CN106098910A (zh) * 2016-08-24 2016-11-09 苏州大学 基于荧光陶瓷及双层纳米光栅结构的偏振白光led

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US20120178193A1 (en) * 2009-09-30 2012-07-12 Bright Crystals Technology, Inc. Method for manufacturing led with transparent ceramics
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