CN102951903A - 陶瓷体及其制备方法及应用该陶瓷体的电子装置 - Google Patents

陶瓷体及其制备方法及应用该陶瓷体的电子装置 Download PDF

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CN102951903A
CN102951903A CN2011102392348A CN201110239234A CN102951903A CN 102951903 A CN102951903 A CN 102951903A CN 2011102392348 A CN2011102392348 A CN 2011102392348A CN 201110239234 A CN201110239234 A CN 201110239234A CN 102951903 A CN102951903 A CN 102951903A
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ceramic body
molar content
display screen
yttrium oxide
thorotrast
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王仁博
关辛午
何柏锋
欧武政
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Shenzhen Futaihong Precision Industry Co Ltd
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Shenzhen Futaihong Precision Industry Co Ltd
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Priority to TW100130585A priority patent/TWI530475B/zh
Priority to US13/430,697 priority patent/US8663781B2/en
Priority to JP2012160299A priority patent/JP6104531B2/ja
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Abstract

本发明提供一种显示屏，其由透明的陶瓷体制成，该陶瓷体的组成成份包括氧化钇、氧化钍、氟化锂和氧化铽，其中该陶瓷体中氧化钇的摩尔百分含量为85~94.99%，氧化钍的摩尔百分含量为4.99~15%，氟化锂和氧化铽的摩尔百分含量均为0.003~0.007%。本发明显示屏具有独特的结构、较高的透光率、耐酸碱腐蚀、使用寿命长、硬度高，能够成为3D结构玻璃的替代材料。本发明还提供一种透明的陶瓷体及其制备方法。

Description

陶瓷体及其制备方法及应用该陶瓷体的电子装置
技术领域
本发明涉及一种透明的陶瓷体及其制备方法，及应用该陶瓷体的电子装置。
背景技术
随着信息产业的不断发展，电子装置的改进一直以来都是技术开发人员所关注的焦点，而显示装置更是重中之重。现有的电子装置的显示屏通常为玻璃材质。而3D玻璃显示屏是区别于平板玻璃而设计出来的一种立体结构玻璃。由于该3D玻璃显示屏可以增大使用者的视角，拓宽显示范围，提高结构美感，一定程度上加强立体视觉效果，因此倍受消费者的青睐。现有的3D玻璃的制备通常采用热压成型的方法，然而，该方法存在成型及加工困难、成本昂贵、设计难、产品性能达不到需求等缺点。
发明内容
有鉴于此，有必要提供一种有效解决上述问题的透明的陶瓷体。
另外，还有必要提供一种上述透明的陶瓷体的制备方法。
此外，还有必要提供一种应用上述透明的陶瓷体的电子装置。
一种透明的陶瓷体，其组成成份包括氧化钇、氧化钍、氟化锂和氧化铽，其中该陶瓷体中氧化钇的摩尔百分含量为85~94.99%，氧化钍的摩尔百分含量为4.99~15%，氟化锂和氧化铽的摩尔百分含量均为0.003~0.007%。
一种透明的陶瓷体的制备方法，其包括如下步骤：
取摩尔百分含量为85~94.99%的氧化钇粉体 (粒径为60~100nm，纯度大于99.99%以上)，摩尔百分含量为4.99~15%的氧化钍粉体 (粒径为60~100nm，纯度大于99.99%以上)，摩尔百分含量为0.003~0.007%的氟化锂及摩尔百分含量为0.003~0.007%的氧化铽作为原料，并将所述原料混合均匀；
取适量混合均匀的原料粉体进行冷等静压成型成一坯体，压力为240~300MPa，保压时间为30~80min；
对成型的坯体进行无压预烧结，烧结温度为1380~1580℃，烧结时间为30～400min；
对预烧结后的坯体进行热等静压，通入氩气作保护气体，处理温度为1950~2150℃，压力为240~300MPa，保温保压的时间为900~3600min。
一种电子装置，其包括显示屏，该显示屏由透明的陶瓷体制成，该陶瓷体的组成成份包括氧化钇、氧化钍、氟化锂和氧化铽，其中该陶瓷体中氧化钇的摩尔百分含量为85~94.99%，氧化钍的摩尔百分含量为4.99~15%，氟化锂和氧化铽的摩尔百分含量均为0.003~0.007%。
本发明利用透明陶瓷制得显示屏，该透明陶瓷体的成型及加工过程简单，以该方法所制得的显示屏具有独特的结构、较高的透光率、耐酸碱腐蚀、使用寿命长、硬度高，能够成为3D结构玻璃的替代品。
附图说明
图1为本发明一较佳实施例的电子装置的示意图；
图2为本发明一较佳实施例的显示屏的示意图；
图3为本发明一较佳实施例的透明陶瓷体的示意图。
主要元件符号说明
电子装置 10
本体 12
显示屏 11
透明陶瓷体 13
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
请参阅图1，本发明较佳实施例的电子装置10包括一本体12及装设于本体12上的显示屏11。请参阅图2及图3，该显示屏11由透明陶瓷体13加工制成，该透明陶瓷体13的主要组成成份为氧化钇(Y2O3)和氧化钍(ThO2)，该透明陶瓷体13中还含有少量的氟化锂(LiF)和氧化铽(Tb2O3)，其中氧化钇的摩尔百分含量为85~94.99%，氧化钍的摩尔百分含量为4.99~15%，氟化锂和氧化铽的摩尔百分含量均为0.003~0.007%。
该透明陶瓷体13的晶粒尺寸为5~20μm，其气孔率低于0.9%，其直线透光率达到85%以上，其抗弯强度为280~350Mpa。
该显示屏11的表面光洁度达到12级(表面粗糙度Ra=0.05μm)。该显示屏11在常温常压下具有良好的耐酸碱腐蚀的性能。
本发明较佳实施例的陶瓷体13的制备方法，其包括如下步骤：
(1)原料的混合
取摩尔百分含量为85~94.99%的氧化钇粉体(粒径为60~100nm，纯度大于99.99%)，摩尔百分含量为4.99~15%的氧化钍粉体(粒径为60~100nm，纯度大于99.99%)，摩尔百分含量为0.003~0.007%的氟化锂及摩尔百分含量为0.003~0.007%的氧化铽作为原料，并将所述原料混合均匀。
(2)冷等静压成型
取适量混合均匀的原料进行冷等静压成型制成一坯体，压力为240~300MPa，保压时间为30~80min。
(3)无压预烧结
对成型的坯体进行无压预烧结，使用无压烧结炉，烧结温度为1380~1580℃，烧结时间为30～400min。在该烧结过程中，所述氧化钍可减小氧化钇晶粒的表面能并能有效抑制晶界迁移速率和不连续的晶粒生长，通过溶解—沉积机制促使氧化钇粉体达到最佳的烧结密度，起到烧结粘结剂(提高烧结致密度)及抑制剂的作用。所述原料中少量的氟化锂为烧结助剂，氧化铽可降低烧结颗粒的尺寸。
(4)热等静压
把预烧结后的坯体置入热等静压炉中，通入氩气作保护气体，处理温度为1950~2150℃，压力为240~300MPa，保温保压的时间为900~3600min，得到相对密度大于99.9%的透明的陶瓷体13(相对密度为多孔体的密度与无孔状态下的同成分材料的密度之比)。
当所述陶瓷体13被用于显示屏11时，可采用CNC(数控雕刻机)对该陶瓷体13进行机械加工，以得到所需显示屏11的形状。
此外，为达到显示屏的表面光洁度的要求，可对所述透明的陶瓷体13进行研磨和抛光处理。根据显示屏11的形状的不同采用相应的研磨设备，如平面研磨机或滚磨机等。抛光处理使用金刚砂和陶瓷专用抛光液组成的混合物。所述显示屏11的表面光洁度为12级。
本发明利用透明陶瓷体13制备显示屏11，该透明陶瓷体13的成型及加工过程相对3D结构玻璃的成型加工过程，工艺更简单稳定，以该方法所制得的显示屏11具有较高的透光率、耐酸碱腐蚀、使用寿命长、硬度高，能够成为3D结构玻璃的替代品。

Claims (12)

1.一种透明的陶瓷体，其组成成份包括氧化钇，其特征在于：该陶瓷体的组成成份还包括氧化钍、氟化锂和氧化铽，其中该陶瓷体中氧化钇的摩尔百分含量为85~94.99%，氧化钍的摩尔百分含量为4.99~15%，氟化锂和氧化铽的摩尔百分含量均为0.003~0.007%。
2.如权利要求1所述的陶瓷体，其特征在于：该陶瓷体的晶粒尺寸为5~20μm。
3.如权利要求1所述的陶瓷体，其特征在于：该陶瓷体的气孔率低于0.9%。
4.如权利要求1所述的陶瓷体，其特征在于：该陶瓷体的直线透光率达到85%以上。
5.如权利要求1所述的陶瓷体，其特征在于：该陶瓷体的抗弯强度为280~350Mpa。
6.如权利要求1所述的陶瓷体，其特征在于：该陶瓷体的相对密度大于99.9%。
7.一种电子装置，其包括本体及装设于本体上的显示屏，该显示屏由透明的陶瓷体制成，其特征在于：该陶瓷体的组成成份包括氧化钇、氧化钍、氟化锂和氧化铽，其中该陶瓷体中氧化钇的摩尔百分含量为85~94.99%，氧化钍的摩尔百分含量为4.99~15%，氟化锂和氧化铽的摩尔百分含量均为0.003~0.007%。
8.如权利要求7所述的电子装置，其特征在于：该显示屏的表面光洁度为12级。
9.如权利要求7所述的电子装置，其特征在于：该显示屏的直线透光率在85%以上。
10.如权利要求7所述的电子装置，其特征在于：该显示屏由所述陶瓷体经机械加工及研磨、抛光后制成。
11.一种透明的陶瓷体的制备方法，其包括如下步骤：
取摩尔百分含量为85~94.99%的氧化钇粉体，摩尔百分含量为4.99~15%的氧化钍粉体，摩尔百分含量为0.003~0.007%的氟化锂及摩尔百分含量为0.003~0.007%的氧化铽作为原料，并将所述原料混合均匀；
取适量混合均匀的原料进行冷等静压成型成一坯体，压力为240~300MPa，保压时间为30~80min；
对成型的坯体进行无压预烧结，烧结温度为1380~1580℃，烧结时间为30～400min；
对预烧结后的坯体进行热等静压，以氩气作保护气体，处理温度为1950~2150℃，压力为240~300MPa，保温保压的时间为900~3600min。
12.如权利要求11所述的透明的陶瓷体的制备方法，其特征在于：该氧化钇粉体和氧化钍粉体的粒径均为60~100nm，纯度均大于99.99%。
CN2011102392348A 2011-08-19 2011-08-19 陶瓷体及其制备方法及应用该陶瓷体的电子装置 Pending CN102951903A (zh)

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