CN102104006A - 一种场效应晶体管的制备方法 - Google Patents
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Abstract
本发明提供一种场效应晶体管的制备方法,该方法包括如下步骤:提供第一型体衬底,利用光刻和刻蚀的方法形成浅槽,并在浅槽内生长形成二氧化硅浅槽隔离结构;在衬底与浅槽隔离结构的上面进行淀积形成高K栅介质层以及金属栅电极层;利用光刻或腐蚀等工艺形成栅极结构;进行第二型体杂质离子注入,形成源漏扩展区;淀积绝缘层,形成紧贴栅极边缘的侧墙;进行第二型体杂质离子注入,形成第二型体场效应晶体管的源漏区,形成源漏区和硅衬底之间的PN结界面;进行微波退火,激活注入的离子。本发明提出的这种新的场效应晶体管的工艺,可以在较低的温度下对源漏区的杂质进行激活,可以减小源漏退火对高K栅介质/金属栅电极的影响。
Description
【技术领域】
本发明涉及一种半导体的制作方法,尤其涉及一种场效应晶体管的制备方法。
【背景技术】
随着半导体技术的发展,金属-氧化物-半导体场效应晶体管(MOSFET)已经得到了广泛的应用。近年来,以硅集成电路为核心的微电子技术得到了迅速的发展,集成电路芯片的发展基本上遵循摩尔定律,即半导体芯片的集成度以每18个月翻一番的速度增长。
可是随着半导体芯片集成度的不断增加,MOSFET的沟道长度也在不断的缩短,当MOSFET的沟道长度变得非常短时,会产生严重的短沟道效应,比如:沟道长度减小到一定程度后,源、漏结的耗尽区在整个沟道中所占的比重增大,栅下面的硅表面形成反型层所需的电荷量减小,因而阈值电压减,同时衬底内耗尽区沿沟道宽度侧向展宽部分的电荷使阈值电压增加,当沟道宽度减小到与耗尽层宽度同一量级时,阈值电压增加变得十分显著,会使半导体芯片性能劣化,甚至无法正常工作。
通过提高栅极对沟道的控制以及采用更浅的源漏结可以达到对短沟道效应更好的控制。在过去的几十年中,MOSFET器件的源漏深度、栅极氧化层的厚度以及栅极长度基本上都是按比例缩小,这样做的目的是为了控制短沟道器件的性能。通常减少栅极氧化层的有效厚度是提高栅极对沟道控制最直接的方式。
目前,对采用高介电常数的介质(高K介质)来作为栅极绝缘层的研究已经进行了十几年。高介电常数的介质,比如铪基氧化物可以得到1纳米以下的有效栅氧厚度,同时栅极隧穿电流可以保持一个比较低的水平。除了用高K介质取代传统的二氧化硅做栅极绝缘层之外,用金属栅电极取代传统的多晶硅栅电极可以消除多晶硅的耗尽效应,进一步减小有效的栅极绝缘层的厚度,从而进一步增强栅电极对沟道的控制。
为了使源漏区和衬底之间的PN结变的更浅,人们一直在研究超低能量的离子注入和毫秒级的热退火工艺,比如激光热退火和闪光退火。为了能够对注入的杂质离子进行充分激活,一般退火时的最高温度至少要达到900甚至1000摄氏度以上。目前,工业界最新世代的场效应晶体管技术就同时采用了高K栅介质/金属栅电极和毫米级的激光热退火工艺。常规的MOSFET器件的工艺技术采用先栅(Gate-First)工艺,即,栅绝缘层/栅电极在源漏区的杂质退火激活之前形成。但是由于高温热退火工艺对高K栅介质和硅衬底以及高K栅介质和金属栅电极界面的影响,会造成有效的栅介质厚度增加以及阈值电压漂移和不稳定。因此,现在已量产的高K栅介质/金属栅电极技术一般采用复杂的大马士革(Damascene)式后栅(Gate-Last)工艺。其特点是高K栅介质/金属栅电极在源漏区杂质激活之后形成,消除了高温退火带来的影响,但是其工艺复杂、成本高,而且由于受到大马士革工艺开孔填充比的限制导致其可缩微能力比常规的Gate-First工艺差。
如何解决或减少源漏区杂质退火对高K栅介质和硅衬底以及高K栅介质和金属栅电极界面的影响,对未来世代的MOSFET工艺集成技术和器件结构的发展都至关重要。
鉴于此,本发明即提出一种改进的场效应管制备方法,以消除或改善上述问题。
【发明内容】
本发明要解决的技术问题在于提供一种改善或消除源漏区杂质退火对高K栅介质和硅衬底以及高K栅介质和金属栅电极界面的影响的场效应晶体管的制备工艺。
本发明通过这样的技术方案解决上述的技术问题:
本发明提供一种场效应晶体管的制备方法,该方法包括如下步骤:
提供第一型体衬底,利用光刻及刻蚀的方法形成浅槽,并在浅槽内生长形成二氧化硅浅槽隔离结构;
在衬底与浅槽隔离结构的上面进行淀积形成高K栅介质层以及金属栅电极层;
利用光刻及刻蚀等工艺形成栅极结构;
进行第二型体杂质离子注入,形成源漏扩展区;
淀积绝缘层,形成紧贴栅极边缘的侧墙;
进行第二型体杂质离子注入,形成第二型体场效应晶体管的源漏区,形成源漏区和硅衬底之间的PN结界面;
进行微波退火,激活注入的离子。
可选的,第一型体衬底可以为硅或绝缘体上的硅。
可选的,所述高K栅介质层可以为氧化铪、氧化硅铪、氮氧硅铪、氮氧硅、氧化铝、氧化镧、或者氧化锆,或者上述物质组成的多层结构或者混合物。
可选的,金属栅电极层可以为氮化钛、氮化钽、金属硅化物、金属钨、金属铝、金属钌、金属铂,或者上述物质组成的多层结构或混合物以及它们与多晶硅组成的多层结构。
可选的,上述的金属硅化物是镍、钛、钴、铂等金属与硅的化合物。
可选的,第一型体衬底为P型时,第二型体杂质为N型杂质,离子注入为用磷或砷进行离子注入;第一型体衬底为N型时,第二型体为P型,杂质离子注入为用硼、氟化硼、或铟进行离子注入。
可选的,在形成源漏扩展区之前进行第一型体杂质离子注入以形成晕圈区以改进器件的短沟道效应。
可选的,在形成源漏扩展区之后进行第一型体杂质离子注入以形成晕圈区以改进器件的短沟道效应。
可选的,第一型体衬底为P型时,第一型体杂质为硼、氟化硼、或铟;第一型体衬底为N型时,第一型体杂质为磷或者砷。
可选的,退火温度不高于400摄氏度。
与现有技术相比较,本发明具有以下优点:本发明提出的这种新的场效应晶体管的工艺,场效应晶体管的高K栅介质/金属栅电极在源漏区的杂质激活之前进行,杂质激活采用微波退火技术,可以在较低的温度下对源漏区的杂质进行激活,可以减小源漏退火对高K栅介质/金属栅电极的影响。
【附图说明】
图1为本发明场效应晶体管的制备方法的步骤-在半导体衬底上形成浅槽隔离结构的示意图;
图2为本发明场效应晶体管的制备方法的步骤-形成栅极叠层结构的示意图;
图3为本发明场效应晶体管的制备方法的步骤-利用光刻、刻蚀形成栅极叠层结构的示意图;
图4为本发明场效应晶体管的制备方法的步骤-离子注入形成源漏扩展区域的示意图;
图5为本发明场效应晶体管的制备方法的步骤-淀积绝缘层、形成侧墙的示意图;
图6为本发明场效应晶体管的制备方法的步骤-离子注入、杂质微波退火激活、形成源漏区的示意图。
【具体实施方式】
下面结合附图详细说明本发明的具体实施方式。
本发明的场效应晶体管的制备方法可应用于N型晶体管与P型晶体管,两者之间的区别在于衬底与源漏区域掺杂的类型互换,即,N型晶体管衬底掺杂P型杂质,P型晶体管衬底掺杂N型杂质。
请参图1-6,以N型场效应晶体管为例,本发明的场效应晶体管的制备方法,包括如下步骤:
(1)提供P型体硅衬底11,利用光刻及刻蚀的方法形成浅槽,并在浅槽内生长形成二氧化硅,形成浅槽隔离结构21(Shallow TrenchIsolation),于该步骤中,P型体硅衬底11可以利用绝缘衬底上的硅(SOI,Silicon-on-Insulator)来替代;
(2)在衬底11与浅槽隔离结构21的上面进行淀积形成高K栅介质层31以及金属栅电极层41,其中,高K栅介质层31可以为氧化铪(HfO2)、一氧化硅铪(HfSiO)、氮氧硅铪(HfSiON)、氮氧硅(SiN)、氧化铝(Al2O3)、氧化镧(La2O3)、氧化锆(ZrO2),或者上述物质组成的多层结构或者混合物;金属栅电极层41可以为氧化钛(TiO)、氧化钽(TaO)、金属硅化物、金属钨(W)、铝(Al)、钌(Ru)、铂(Pt),或者上述物质组成的多层结构或混合物以及它们与多晶硅组成的多层结构;上述的金属硅化物可以是镍(Ni)、钛(Ti)、钴(Co)、铂(Pt)等金属与硅的化合物;
(3)利用光刻及刻蚀等工艺形成栅极结构;
(4)进行N型体杂质离子注入,形成源漏扩展区111,其中的杂质可选用磷(N)或砷(As);另外,在此步骤之前或者之后,可选择进行P型体杂质离子注入,硼(B)、氟化硼(BF2)、铟(In)可作为选用的杂质,以形成Halo(晕圈)区以改进器件的短沟道效应;
(5)淀积绝缘层,可选用氧化硅(SiO2)或者氮化硅(SiN),利用各向异性干法刻蚀等方法,形成紧贴栅极边缘的侧墙51;
(6)进行N型杂质(磷或者砷)离子注入,形成N型场效应晶体管的源漏区,形成源漏区和硅衬底之间的PN结界面111a;
(7)进行微波退火,激活注入的离子,退火温度不超过400摄氏度,以减小对高K栅介质、金属栅电极以及它们之间的界面的影响。
经过上述步骤,基本的金属氧化物场效应晶体管的结构就形成了,后续的工艺如在源漏区形成金属硅化物以及后道的互连工艺为常规工艺,这里不作赘述。
本发明提出的这种新的场效应晶体管的工艺,场效应晶体管的高K栅介质/金属栅电极在源漏区的杂质激活之前形成,杂质激活采用微波退火技术,可以在较低的温度下对源漏区的杂质进行激活,可以减小源漏退火对高K栅介质/金属栅电极的影响,从而可以形成用于未来世代的场效应晶体管的工艺集成技术。
本发明提供的实施方式,是以N型场效应晶体管为例,实际上,可以同样应用于P型场效应晶体管,两者不同之处,仅在于根据不同的型体衬底,提供相反型体的杂质离子注入,因此,可定义第一型体与第二型体,第一型体为P型时,即为P型体衬底,进行第二型体,即N型杂质离子注入,如磷(N)或砷(As);第一型体为N型时,即为N型体衬底,进行第二型体,即P型杂质离子注入,如硼(B)、氟化硼(BF2)、铟(In)等。
以上所述仅为本发明的较佳实施方式,本发明的保护范围并不以上述实施方式为限,但凡本领域普通技术人员根据本发明所揭示内容所作的等效修饰或变化,皆应纳入权利要求书中记载的保护范围内。
Claims (11)
1.一种场效应晶体管的制备方法,其特征在于,该方法包括如下步骤:
提供第一型体衬底,利用光刻及刻蚀的方法形成浅槽,并在浅槽内生长形成二氧化硅浅槽隔离结构;
在衬底与浅槽隔离结构上淀积形成高K栅介质层以及金属栅电极层;
利用光刻及刻蚀等工艺形成栅极结构;
进行第二型体杂质离子注入,形成源漏扩展区;
淀积绝缘层,形成紧贴栅极边缘的侧墙;
进行第二型体杂质离子注入,形成第二型体场效应晶体管的源漏区,形成源漏区和硅衬底之间的PN结界面;
进行微波退火,激活注入的离子。
2.根据权利要求1所述的场效应晶体管的制备方法,其特征在于:第一型体衬底可以为硅或绝缘体上的硅。
3.根据权利要求1所述的场效应晶体管的制备方法,其特征在于:所述高K栅介质层可以为为氧化铪、氧化硅铪、氮氧硅铪、氮氧硅、氧化铝、氧化镧、或者氧化锆,或者上述物质组成的多层结构或者混合物。
4.根据权利要求3所述的场效应晶体管的制备方法,其特征在于:金属栅电极层为氮化钛、氮化钽、金属钨、金属铝、金属钌、金属铂、金属硅化物,或者上述物质组成的多层结构或混合物以及它们与多晶硅组成的多层结构。
5.根据权利要求4所述的场效应晶体管的制备方法,其特征在于:上述的金属硅化物是镍、钴、钛、铂等金属与硅的化合物。
6.根据权利要求1所述的场效应晶体管的制备方法,其特征在于:第一型体衬底为P型时,第二型体杂质为N型杂质,离子注入为用磷或砷进行离子注入;第一型体衬底为N型时,第二型体杂质为P型杂质,离子注入为用硼、氟化硼、或铟进行离子注入。
7.根据权利要求1所述的场效应晶体管的制备方法,其特征在于:在形成源漏扩展区之前进行第一型体杂质离子注入以形成晕圈区以改进器件的短沟道效应。
8.根据权利要求1所述的场效应晶体管的制备方法,其特征在于:在形成源漏扩展区之后进行第一型体杂质离子注入以形成晕圈区以改进器件的短沟道效应。
9.根据权利要求7或8所述的场效应晶体管的制备方法,其特征在于:第一型体衬底为P型时,第一型体杂质为硼、氟化硼、或铟;第一型体衬底为N型时,第一型体杂质为磷或者砷。
10.根据权利要求1所述的场效应晶体管的制备方法,其特征在于:退火温度不高于400摄氏度。
11.一种场效应晶体管的制备方法,其特征在于,该方法包括如下步骤:
提供衬底;
在衬底上淀积形成高K栅介质层以及金属栅电极层;
杂质离子注入,形成源漏区;
在衬底上淀积形成高K栅介质层、金属栅电极层和源漏区杂质离子注入之后,进行微波退火,激活源漏区注入的杂质离子。
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WO2012097606A1 (zh) * | 2011-01-17 | 2012-07-26 | 复旦大学 | 一种场效应晶体管的制备方法 |
CN103000579A (zh) * | 2012-12-14 | 2013-03-27 | 复旦大学 | 一种半导体器件及其制备方法 |
CN103839812A (zh) * | 2012-11-21 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
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