CN102098864B - Plasma generating device - Google Patents
Plasma generating device Download PDFInfo
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- CN102098864B CN102098864B CN 200910250438 CN200910250438A CN102098864B CN 102098864 B CN102098864 B CN 102098864B CN 200910250438 CN200910250438 CN 200910250438 CN 200910250438 A CN200910250438 A CN 200910250438A CN 102098864 B CN102098864 B CN 102098864B
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Abstract
The invention relates to a plasma generating device which comprises a plasma processing cavity, an upper electrode board, a lower electrode board and at least two impedance modulators. The upper electrode board is used for connecting a radio-frequency power supply. The impedance modulators are in pair two by two. Each impedance modulator is provided with an impedance modulating value curve. The impedance modulators are connected to the symmetrical positions of the upper electrode board in parallel, wherein each impedance modulating value curve changes along with time, and an equivalent impedance value curve in parallel connection with the impedance modulating value curves is fixed along with the time.
Description
Technical field
The present invention relates to a kind of plasma (plasma) generation device, and be particularly related to a kind of plasma generating device that produces plasma with radio frequency electromagnetic.
Background technology
Plasma generating device can carry out the processing procedures such as film Shen is long-pending, etching in the manufacture process of the products such as thin-film solar cells, liquid crystal display and semiconductor chip.Therefore plasma generating device is very important key equipment in the said goods.Yet, when the wavelength of the size of the electric pole plate of plasma generating device and radio frequency electromagnetic near the time, radio frequency electromagnetic will produce standing wave phenomena.It is very inhomogeneous that standing wave phenomena will cause plasma to distribute, and finally causes the problems such as the inhomogeneous or etching of plated film is inhomogeneous.Especially when the radio-frequency electromagnetic wave frequency increased, standing wave effect was more notable.For fear of the generation of standing wave phenomena, business circles just propose following several pieces of patents.
Hundred plucked instrument system house (Unaxis) propose 7,487, No. 740 patents of U.S. US, and this piece patent mainly utilizes the mode (shaped electrode) of the shape of revising the upper/lower electrode plate to eliminate standing wave effect.This design is when utilizing standing wave to produce, can be large and phenomenon that successively decrease toward the both sides near the radio-frequency voltage of electric pole plate middle position, by theory calculating electric pole plate is designed to the downward special shape of both sides nick, between electric pole plate and plasma, separate with a dielectric window simultaneously, lower electrode plate is then kept even shape, in obtaining between electric pole plate and lower electrode plate, uniform Electric Field Distribution is arranged, to produce uniform plasma.Also or conversely, revise the curvature that lower electrode plate tool nick makes progress, and insert again one deck insulating material so that integral surface has good flatness.Yet, no matter be the shape of revising electric pole plate or lower electrode plate, the shape of these electric pole plates or lower electrode plate all must be designed for the electromagnetic frequency of particular radio-frequency, in case change the radio-frequency electromagnetic wave frequency or just can't be suitable under different processing procedure pressure or different plasma density.
In addition, Mitsubishi heavy industry (Mitsubishi Heavy Industries, MHI) then proposes 7,141, No. 516 patents of U.S. US.This piece patent mainly is to replace the tabular electric pole plate with palisade top electrode (Ladder-Shape).The maximum characteristics of this technology are to utilize phase-modulation (PhaseModulation) method that radio-frequency power is introduced by the both sides of palisade top electrode respectively, and with two phase change devices the phase difference between two input powers are done periodic variation (0 °～360 °) in time.So can be so that in time displacement of the standing wave node that produces.When the frequency of phase difference change is enough fast, can reach equally distributed purpose to time averaging electric field/plasma density.Yet this kind practice must provide two groups of power supplys and two groups of phase change devices, increases on foot many equipment costs.
In addition, the Mitsubishi heavy industry more proposes 6,417, No. 079 patent of U.S. US.This piece patent mainly is to utilize the other end at the palisade top electrode to install dummy load additional, so that radio frequency electromagnetic is absorbed when being delivered to dummy load and can produce reflected wave, so just can avoid the generation of standing wave.Yet the power that dummy load will the quite a lot of top electrode of loss causes the waste of the energy.
Summary of the invention
The present invention relates to a kind of plasma generating device, it utilizes impedance modulation device paired more than two to regulate plasma, so that the standing wave node that radio frequency electromagnetic produces can along with the time intercropping periodically mobile, for time average, just can produce uniform plasma and distribute.
According to an aspect of the present invention, a kind of plasma generating device is proposed.Plasma generating device comprises that a plasma process chambers, an electric pole plate, a lower electrode plate are with bearing substrate and at least two impedance modulation devices.Electric pole plate is in order to connect a radio-frequency power supply.These a little impedance modulation devices in pairs.Each impedance modulation utensil has an impedance modulation value curve.These a little impedance modulation devices are parallel to the symmetry place of electric pole plate.Wherein, each impedance modulation value curve temporal evolution, and an equivalent impedance curve in parallel of these a little impedance modulation value curves is fixing in time.
For foregoing of the present invention can be become apparent, all embodiment cited below particularly, and cooperation accompanying drawing are described in detail below:
Description of drawings
Fig. 1 illustrates the schematic diagram of the plasma generating device of first embodiment of the invention;
Fig. 2 illustrates the electric pole plate of Fig. 1 and the vertical view of the first～the second impedance modulation device;
Fig. 3 A illustrates the variation diagram of the first～the second impedance modulation value curve of the first embodiment;
Fig. 3 B illustrates the variation diagram of equivalent impedance curve in parallel of the first～the second impedance modulation device of the first embodiment;
Fig. 4 illustrates the vertical view of the electric pole plate and first of a kind of plasma generating device of second embodiment of the invention～the 4th impedance modulation device;
Fig. 5 illustrates the vertical view of the electric pole plate and first of the another kind of plasma generating device of second embodiment of the invention～the 4th impedance modulation device;
Fig. 6 A illustrates the variation diagram of first of the second embodiment～the 4th impedance modulation value curve;
Fig. 6 B illustrates the variation diagram of the equivalent impedance curve in parallel of first of the second embodiment～the 4th impedance modulation device;
Fig. 7 illustrates the vertical view of the electric pole plate and first of the plasma generating device of third embodiment of the invention～the 8th impedance modulation device;
Fig. 8 A illustrates the variation diagram of first of the 3rd embodiment～the 8th impedance modulation value curve; And
Fig. 8 B illustrates the variation diagram of the equivalent impedance curve in parallel of first of the 3rd embodiment～the 8th impedance modulation device.
[main element symbol description]
100,200,300,400: plasma generating device
110: the plasma processing chambers body
120: electric pole plate
130: lower electrode plate
141: the first impedance modulation devices
142: the second impedance modulation devices
143: the three impedance modulation devices
144: the four impedance modulation devices
145: the five impedance modulation devices
146: the six impedance modulation devices
147: the seven impedance modulation devices
148: the eight impedance modulation devices
150: radio-frequency power supply
900: the processing procedure substrate
A1: the first angle point of electric pole plate
A2: the second angle point of electric pole plate
A3: the third angle point of electric pole plate
A4: the 4th angle point of electric pole plate
C: the center of electric pole plate
L1: the first side of electric pole plate
L10: the mid point of first side
L12: the line of the first impedance modulation device and the second impedance modulation device
L2: the second side of electric pole plate
L20: the mid point of second side
L3: the 3rd side of electric pole plate
L30: the mid point of the 3rd side
L34: the line of the 3rd impedance modulation device and the 4th impedance modulation device
L4: the four side of electric pole plate
L40: the mid point of four side
V0, V0 ', V0 ": equivalent impedance curve in parallel
V1: the first impedance modulation value curve
V2: the first impedance modulation value curve
Zmax: the maximum of impedance modulation value
Zmin: the minimum value of impedance modulation value
V3: the 3rd impedance modulation value curve
V4: the 4th impedance modulation value curve
V5: the 5th impedance modulation value curve
V6: the 6th impedance modulation value curve
V7: the 7th impedance modulation value curve
V8: the 8th impedance modulation value curve
Embodiment
Below propose embodiment and be elaborated, embodiment is only in order to as the example explanation, scope that can't limit wish protection of the present invention.In addition, the accompanying drawing among the embodiment omits unnecessary element, with clear demonstration technical characterstic of the present invention.
The first embodiment
Please refer to Fig. 1, it illustrates the schematic diagram of the plasma generating device 100 of first embodiment of the invention.Plasma generating device 100 comprise a plasma process chambers 110, an electric pole plate 120, a lower electrode plate 130, one first impedance modulation device 141, one second impedance modulation device 142, a radio-frequency power supply 150, a steam vent and bleed the side Pu (steam vent and bleed the side Pu do not illustrate).Electric pole plate 120 and lower electrode plate 130 are set in parallel in the up and down both sides in the plasma processing chambers body 110.Electric pole plate 120 connects radio-frequency power supply 150.Usually, radio-frequency power supply 150 puts on electric pole plate, and bottom electrode directly ground connection or electrical suspension joint.Process gas is inputed in the plasma processing chambers body 110 by gas inject mouth (not shown).When the enough radio-frequency powers of radio-frequency power supply 150 outputs, will between electric pole plate 120 and lower electrode plate 130, produce and keep plasma.Processing procedure substrate 900 (such as being semiconductor chip to be processed or glass substrate that becomes display floater, solar panel to be processed etc.) is positioned on the bottom electrode 130, to carry out various processing procedures by plasma.Bleed and help the Pu will react rear gas extraction by steam vent.The symmetry place (Fig. 1 illustrate is for establishing the embodiment that is positioned over electric pole plate 120) that the first paired impedance modulation device 141 and the second impedance modulation device 142 are arranged at electric pole plate 120 or lower electrode plate 130 both sides.The first impedance modulation device 141 and the second impedance modulation device 142 are all variable capacitance.
Please refer to Fig. 2, it illustrates the electric pole plate 120 of Fig. 1 and the vertical view of the first～the second impedance modulation device 141～142.Electric pole plate 120 is a rectangular configuration or a circular configuration.In the present embodiment, electric pole plate 120 is rectangular configuration.Electric pole plate 120 has a first side L1, a second side L2, one the 3rd side L3 and a four side L4.The first impedance modulation device 141 and the second impedance modulation device 142 are parallel to the symmetric position of electric pole plate 120.As shown in Figure 2, the line L12 of the first impedance modulation device 141 and the second impedance modulation device 142 center C of passing through electric pole plate 120.In the present embodiment, the first impedance modulation device 141 and the second impedance modulation device 142 are electrically connected at respectively the mid point L10 of corresponding first side L1 and the mid point L20 of second side L2.
Please refer to Fig. 3 A, it illustrates first, second impedance modulation value curve V1 of the first embodiment, the variation diagram of V2.The first impedance modulation device 141 has in time one first impedance modulation value curve V1 of cycle variation, and the second impedance modulation device 142 has time dependent one second impedance modulation value curve V2.
Take Fig. 3 A as example, in the time interval of time point t0～t3, the first impedance modulation value curve V1 to minimum value Zmin, is incremented to maximum Zmax by minimum value Zmin straight line by maximum Zmax straight-line decline again, and then by maximum Zmax straight-line decline to minimum value Zmin, the rest may be inferred.Opposite, the second impedance modulation value curve V2 is incremented to maximum Zmax by minimum value Zmin straight line, again by maximum Zmax straight-line decline to minimum value Zmin, and then be incremented to maximum Zmax by minimum value Zmin straight line, the rest may be inferred.So in the interval, when the first impedance modulation value curve V1 successively decreased, the second impedance modulation value curve V2 increased progressively at one time; When the first impedance modulation value curve V1 increased progressively, the second impedance modulation value curve V2 successively decreased.
Cycle so repeatedly changes so that the standing wave node that radio frequency electromagnetic produces can along with the time intercropping periodically mobile, for time average, just can produce uniform plasma and distribute, this also is the function that this impedance modulation is wanted to reach.And the change frequency scope of impedance modulation can adjust according to circumstances, to reach the optimization of processing procedure, for example be set as in the situation of 0.1 hertz of (Hz)～1000 hertz at first, second impedance modulation device 141,142 change frequency, can allow the period of change of first, second impedance modulation value curve V1, V2 little.So just, can produce uniform plasma distributes.
In addition, as shown in Figure 3A, the maximum Zmax of the first impedance modulation value curve V1 equals in fact the maximum Zmax of the second impedance modulation value curve V2, and the minimum value Zmin of the first impedance modulation value curve V1 equals in fact the minimum value Zmin of the second impedance modulation value curve V2.Shown in Fig. 3 B, it illustrates first, second impedance modulation device 141 of the first embodiment, the variation diagram of 142 equivalent impedance curve V0 in parallel.In the just the opposite and complementary situation of the variation of the first impedance modulation value curve V1 and the second impedance modulation value curve V2, the equivalent impedance curve V0 in parallel of arbitrary time point is all equal (Zmin+Zmax).So, whole plasma source impedance is to keep a fixed value in time, can be so that the transmission of radio-frequency power can not be subject to the impact that first, second impedance modulation device 141,142 is adjusted in time, and then keep stablizing of plasma intensity.
The second embodiment
Please refer to Fig. 4 and Fig. 5, Fig. 4 illustrates the vertical view of the electric pole plate 120 and first of a kind of plasma generating device 200 of second embodiment of the invention～the 4th impedance modulation device 141～144, and Fig. 5 illustrates the vertical view of the electric pole plate 120 and first of the another kind of plasma generating device 300 of second embodiment of the invention～the 4th impedance modulation device 141～144.Plasma generating device 100 differences of the plasma generating device 200 of present embodiment, the 300 and first embodiment are the quantity of impedance modulation device, and all the other something in common no longer repeat.Such as Fig. 4～shown in Figure 5, except paired the first impedance modulation device 141 and the second impedance modulation device 142, the plasma generating device 200 of present embodiment also comprises one the 3rd paired impedance modulation device 143 and one the 4th impedance modulation device 144.
Similarly, as above-mentioned the first embodiment, the center C that the line L12 of the first impedance modulation device 141 and the second impedance modulation device 142 passes through electric pole plate 120.The center C that the line L34 of the 3rd impedance modulation device 143 and the 4th impedance modulation device 144 also passes through electric pole plate 120.So that the first～the 4th impedance modulation device 141～144 is arranged at symmetrical position.
For instance, take the plasma generating device 200 of Fig. 4 as example, when the first impedance modulation device 141 and the second impedance modulation device 142 were electrically connected at respectively the mid point L20 of the mid point L10 of first side L1 and second side L2, the 3rd impedance modulation device 143 and 144 of the 4th impedance modulation devices were electrically connected at respectively the mid point L30 of the 3rd side L3 and the mid point L40 of four side L4.
Take the plasma generating device 300 of Fig. 5 as example, A2 when the first impedance modulation device 141 and the second impedance modulation device 142 are electrically connected at respectively the first angle point A1 and the second angle point, the 3rd impedance modulation device 143 and the 4th impedance modulation device 144 can be electrically connected at respectively third angle point A3 and the 4th angle point A4.So that the first～the 4th impedance modulation device 141～144 is arranged at symmetrical position.
Then, please refer to Fig. 6 A, it illustrates the variation diagram of first of the second embodiment～the 4th impedance modulation value curve V1～V4.The first impedance modulation device 141, the second impedance modulation device 142, the 3rd impedance modulation device 143 and the 4th impedance modulation device 144 have respectively the first impedance modulation value curve V1, the second impedance modulation value curve V2, the 3rd impedance modulation value curve V3 and the 4th impedance modulation value curve V4 of in time cycle variation.
Take Fig. 6 A as example, in the interval, when the first impedance modulation value curve V1 successively decreased, the second impedance modulation value curve V2 increased progressively at one time; When the first impedance modulation value curve V1 increased progressively, the second impedance modulation value curve V2 successively decreased.When the 3rd impedance modulation value curve V3 successively decreased, the 4th impedance modulation value curve V4 increased progressively; When the 3rd impedance modulation value curve V3 increased progressively, the 4th impedance modulation value curve V4 successively decreased.And it is poor that the 3rd impedance modulation value curve V3 and the first impedance modulation value curve V1 differ 1/4 periodic phase.
Cycle so repeatedly changes so that the standing wave node that radio frequency electromagnetic produces can along with the time intercropping periodically mobile, for time average, just can produce uniform plasma and distribute, this also is the function that this impedance modulation is wanted to reach.And the change frequency scope of impedance modulation can adjust according to circumstances, to reach the optimization of processing procedure.For example be set as in the situation of 0.1 hertz of (Hz)～1000 hertz at the change frequency of the first～the 4th impedance modulation device 141～144, can allow the period of change of first～the 4th impedance modulation value curve V1～V4 little.So just, can produce equally distributed plasma.
In addition, as shown in Figure 6A, the maximum Zmax of the first impedance modulation value curve V1, the second impedance modulation value curve V2, the 3rd impedance modulation value curve V3 and the 4th impedance modulation value curve V4 is all equal.The minimum value Zmin of the first impedance modulation value curve V1, the second impedance modulation value curve V2, the 3rd impedance modulation value curve V3 and the 4th impedance modulation value curve V4 is all equal.Shown in Fig. 6 B, it illustrates the variation diagram of the equivalent impedance curve V0 ' in parallel of first of the second embodiment～the 4th impedance modulation device 141～144.Variation at the first impedance modulation value curve V1 and the second impedance modulation value curve V2 is just the opposite and complementary, and in the just the opposite and complementary situation of the variation of the 3rd impedance modulation value curve V3 and the 4th impedance modulation modulation value curve V4, the equivalent impedance curve V0 ' in parallel of arbitrary time point is all equal (2 * [Zmin+Zmax]).So, whole plasma source impedance is to keep a fixed value in time, can be so that the transmission of radio-frequency power can not be subject to the impact that first, second, third, fourth impedance modulation device 141,142,143,144 is adjusted in time, and then keep the stable of plasma intensity.
The 3rd embodiment
Please refer to Fig. 7, it illustrates the vertical view of the electric pole plate 120 and first of the plasma generating device 400 of third embodiment of the invention～the 8th impedance modulation device 141～148.Plasma generating device 100 differences of the plasma generating device 400 of present embodiment and the first embodiment are the quantity of impedance modulation device, and all the other something in common no longer repeat.As shown in Figure 7, except paired the first impedance modulation device 141 and the second impedance modulation device 142, the plasma generating device 400 of present embodiment also comprises the 3rd paired impedance modulation device 143 and the 4th impedance modulation device 144, paired the 5th impedance modulation device 145 and the 6th impedance modulation device 146 and paired the 7th impedance modulation device 147 and the 8th impedance modulation device 148.The first～the 8th impedance modulation device 141～148 is parallel to respectively mid point L40, third angle point A3 and the 4th angle point A4 of mid point L30, four side L4 of mid point L20, the first angle point A1, the second angle point A2, the 3rd side L3 of mid point L10, the second side L2 of the first side L1 of electric pole plate 120.
Then, please refer to Fig. 8 A, it illustrates the variation diagram of first～the 8th impedance modulation modulation value curve V1～V8 of the impedance modulation group 140 of the 3rd embodiment.The first～the 8th impedance modulation device 141～148 has respectively in time first～the 8th impedance modulation value curve V1～V8 of cycle variation.
Take Fig. 8 A as example, at one time in the interval, variation at the first impedance modulation value curve V1 and the second impedance modulation value curve V2 is just the opposite and complementary, variation at the 3rd impedance modulation value curve V3 and the 4th impedance modulation value curve V4 is just the opposite and complementary, variation at the 5th impedance modulation value curve V5 and the 6th impedance modulation value curve V6 is just the opposite and complementary, and just the opposite and complementary in the variation of the 7th impedance modulation value curve V7 and the 8th impedance modulation value curve V8.
And it is poor that the 3rd impedance modulation value curve V3 and the first impedance modulation value curve V1 differ 1/8 periodic phase, it is poor that the 5th impedance modulation value curve V5 and the 3rd impedance modulation value curve V3 differ 1/8 periodic phase, and it is poor that the 7th impedance modulation value curve V7 and the 5th impedance modulation value curve V5 differ 1/8 periodic phase.
Cycle so repeatedly changes so that the standing wave node that radio frequency electromagnetic produces can along with the time intercropping periodically mobile, for time average, just can produce uniform plasma and distribute, this also is the function that this impedance modulation is wanted to reach.And the change frequency scope of impedance modulation can adjust according to circumstances, to reach the optimization of processing procedure.For example be set as in the situation of 0.1 hertz of (Hz)～1000 hertz at the change frequency of the first～the 8th impedance modulation device 141～148, can allow the period of change of first～the 8th impedance modulation value curve V1～V8 little.So just, can produce equally distributed plasma.
Please refer to Fig. 8 B, it illustrates the variation diagram of the equivalent impedance curve V0 in parallel of first of the 3rd embodiment～the 8th impedance modulation device 141～148.The equivalent impedance curve V0 in parallel of arbitrary time point " be all equal (4 * [Zmin+Zmax]).So, whole plasma source impedance is to keep a fixed value in time, can be so that the transmission of radio-frequency power can not be subject to the impact that first, second, third, fourth impedance modulation device 141,142,143,144 is adjusted in time, and then keep the stable of plasma intensity.
The disclosed plasma generating device of the above embodiment of the present invention utilizes a pair or more of impedance modulation group to regulate plasma, so that the standing wave node that radio frequency electromagnetic produces can along with the time intercropping periodically mobile, for time average, just can produce uniform plasma and distribute, to reach the demand of the plasma process uniformity.
In sum, although the present invention with all embodiment openly as above, so it is not to limit the present invention.Those skilled in the art of the invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking the appended claims person of defining.
Claims (9)
1. plasma generating device comprises:
One plasma process chambers;
One electric pole plate is in order to connect a radio-frequency power supply;
One lower electrode plate; And
At least two impedance modulation devices, these impedance modulation devices in pairs, respectively this impedance modulation utensil has an impedance modulation value curve, a wherein end ground connection of described impedance modulation device in pairs, the other end connects the each other symmetrical position of this electric pole plate;
Wherein, respectively the cycle changes this impedance modulation value curve in time, and within cycle time, the variation of the impedance modulation value curve of paired impedance modulation device is opposite and complementary, so that the integral body of the equivalent impedance curve in parallel of these impedance modulation value curves is fixing in time.
2. plasma generating device as claimed in claim 1, wherein respectively this impedance modulation value curve is that straight line increases progressively or straight-line decline within a time cycle.
3. plasma generating device as claimed in claim 1, wherein respectively the maximum of this impedance modulation value curve is equal in fact.
4. plasma generating device as claimed in claim 1, wherein respectively the minimum value of this impedance modulation value curve is equal in fact.
5. plasma generating device as claimed in claim 1, wherein this electric pole plate is a rectangular configuration or a circular configuration.
6. plasma generating device as claimed in claim 1, wherein the line of these paired impedance modulation devices passes through the center of this electric pole plate.
7. plasma generating device as claimed in claim 1, wherein these paired impedance modulation devices are electrically connected at respectively the mid point of the corresponding dual side-edge of this electric pole plate.
8. plasma generating device as claimed in claim 1, wherein these paired impedance modulation devices are electrically connected at respectively two corresponding angle points of this electric pole plate.
9. plasma generating device as claimed in claim 1, wherein the change frequency of these impedance modulation devices is adjustable.
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| CN103165384B (en) * | 2011-12-16 | 2016-01-06 | 中微半导体设备(上海)有限公司 | A kind of plasma etching room |
| CN103499195A (en) * | 2013-10-12 | 2014-01-08 | 王兆进 | Radio-frequency dryer |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6417079B1 (en) * | 1999-06-17 | 2002-07-09 | Mitsubishi Heavy Industries, Ltd. | Discharge electrode, high-frequency plasma generator, method of power feeding, and method of manufacturing semiconductor device |
| JP2006228933A (en) * | 2005-02-17 | 2006-08-31 | Masayoshi Murata | High frequency plasma generator, surface treatment apparatus constituted thereof and surface treatment method |
| JP2006332704A (en) * | 2006-08-21 | 2006-12-07 | Masayoshi Murata | Method and apparatus for plasma surface treatment |
| CN1879189A (en) * | 2003-09-10 | 2006-12-13 | 尤纳克西斯巴尔策斯公司 | Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates |
| CN101187016A (en) * | 2007-11-19 | 2008-05-28 | 南开大学 | Large area VHF-PECVD reaction chamber back feed-in type parallel plate electrode capable of obtaining even electric field |
| JP2008124028A (en) * | 2006-11-14 | 2008-05-29 | Lg Electronics Inc | Plasma generating device and method, and manufacturing method of plasma display device using it |
| CN101245446A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Method for improving homogeneity of large area film coating |
| CN201194213Y (en) * | 2008-01-18 | 2009-02-11 | 东捷科技股份有限公司 | Pore type electrode having uniform electric field distribution |
-
2009
- 2009-12-09 CN CN 200910250438 patent/CN102098864B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6417079B1 (en) * | 1999-06-17 | 2002-07-09 | Mitsubishi Heavy Industries, Ltd. | Discharge electrode, high-frequency plasma generator, method of power feeding, and method of manufacturing semiconductor device |
| CN1879189A (en) * | 2003-09-10 | 2006-12-13 | 尤纳克西斯巴尔策斯公司 | Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates |
| JP2006228933A (en) * | 2005-02-17 | 2006-08-31 | Masayoshi Murata | High frequency plasma generator, surface treatment apparatus constituted thereof and surface treatment method |
| JP2006332704A (en) * | 2006-08-21 | 2006-12-07 | Masayoshi Murata | Method and apparatus for plasma surface treatment |
| JP2008124028A (en) * | 2006-11-14 | 2008-05-29 | Lg Electronics Inc | Plasma generating device and method, and manufacturing method of plasma display device using it |
| CN101245446A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Method for improving homogeneity of large area film coating |
| CN101187016A (en) * | 2007-11-19 | 2008-05-28 | 南开大学 | Large area VHF-PECVD reaction chamber back feed-in type parallel plate electrode capable of obtaining even electric field |
| CN201194213Y (en) * | 2008-01-18 | 2009-02-11 | 东捷科技股份有限公司 | Pore type electrode having uniform electric field distribution |
Non-Patent Citations (1)
| Title |
|---|
| 葛洪 等.大面积VHF-PECVD用多点馈入平行板电极馈入点优化的数值研究.《真空科学与技术学报》.2008,第28卷(第4期),281-285. * |
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