CN100567567C - Can obtain the big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode of uniform electric field - Google Patents
Can obtain the big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode of uniform electric field Download PDFInfo
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- CN100567567C CN100567567C CNB2007101502293A CN200710150229A CN100567567C CN 100567567 C CN100567567 C CN 100567567C CN B2007101502293 A CNB2007101502293 A CN B2007101502293A CN 200710150229 A CN200710150229 A CN 200710150229A CN 100567567 C CN100567567 C CN 100567567C
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Abstract
The invention discloses a kind of big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode that obtains uniform electric field, comprise parallel plate power electrode plates and power feed-in connectivity port, it is characterized in that described power feed-in connectivity port is positioned at the back side of power electrode plates, the front of power electrode plates is relative with substrate S.The present invention utilizes the optimization of electrode power feed-in port position to distribute, the logarithmic singularity effect and the electromotive force standing wave effect that have suppressed near the electromotive force of feedthrough electrode inbound port, make the electric field distribution homogeneity obtain bigger improvement, thereby can avoid because the non-uniform electric problem that adopts electrode edge power feed-in mode to cause.The invention solves the homogeneity question of broad-area electrode plate Potential distribution, lay a good foundation, can promote silicon thin-film battery and film transistor matrix technology industrialization process effectively for researching and developing big area VHF-PECVD thin film deposition and etching system.
Description
[technical field]
The present invention relates to the film transistor matrix technical field in silicon-film solar-cell and the flat pannel display field, the electrode design of the big area VHF-PECVD reaction chamber of the obtained uniform electric field of particularly a kind of plasma enhanced chemical vapor deposition or plasma etching reaction chamber.
[background technology]
In recent years, existing report application very high frequency(VHF) (VHF) technology can increase depositing of thin film speed to the method for PECVD, and result of study shows: VHF-PECVD is fit to the high speed deposition of microcrystalline silicon film and amorphous silicon membrane fully.Yet the applied research of VHF-PECVD is normally carried out in small size PECVD reaction chamber, thereby can not directly apply in the large-scale commercial production.Radio frequency condenser coupling parallel-plate electrode reaction chamber is widely used in the plasma reinforced chemical vapour deposition or the film etching of amorphous silicon membrane, silica membrane, silicon nitride film; Area surpasses 1m
2Rectangle PECVD reaction chamber be used to the film transistor matrix producing the photovoltaic solar battery and be used for the large-area flat-plate indicating meter.These industrial application are had relatively high expectations to the ununiformity of film thickness.Generally, these reaction chambers drive with standard 13.56MHz excitation frequency, and (the very high frequency(VHF) technology VHF) has keen interest but people are to using higher frequency.Adopt the VHF activated plasma, thereby can reduce the ion energy that plasma sheath layer thickness and voltage reduce electronic temp, reduce the bombardment substrate, increased the ion-flow rate that is transported to growth surface, can improve the particle size that sedimentation rate can increase crystal grain in the film again, and have the good technical compatibility with the amorphous/microcrystalline silicon solar cell preparation technology of routine.Therefore, people produce very big interest to VHF-PECVD in industrial application.
In the process of deposition or etching, many factors can cause the heteropical generation of film transverse growth in radio frequency parallel plate reaction chamber.This comprises substrate and electrode imperfectly contacts, have that dust granules pollutes in the geometrical shape of substrate, inappropriate gas flow distribution, plasma body, electrode asymmetric, and various electrostatics and Electromagnetic Environmental Effect etc.Consider the parameter of plasma body and the design of reaction chamber, these effects all have remarkable influence under various excitation frequencies, but usually appropriate design and the appropriate parameters adjustment by reaction chamber can partly or entirely be solved.Yet, when improving along with the excitation frequency that is applied to the big area reaction chamber, in the reaction chamber of traditional condenser coupling parallel-plate electrode reaction chamber or application ladder type electrode, the electromotive force logarithmic singularity effect of electromotive force standing wave effect and power feed-in coupling end has had a strong impact on the homogeneity of Potential Distributing.Consider since plasma body have caused wavelength attenuation or a degradation effects, when the size of reaction chamber approximately is to be in the wavelength X in the freeboard under the excitation frequency
0(λ under 13.56MHz
0/ 4=5.53m only is 0.75m when 100MHz) four/for the moment, it is important that the standing wave heterogeneity has become.Expect that uniform plasma body realizes uniformly deposition or etching, must be to reaction chamber, particularly electrode wherein and power feed-in mode reasonably design, and come the standing electromagnetic wave effect in the inhibited reaction chamber.Therefore, obtain the uniform big area VHF-PECVD electrode design of electric field, have important practical significance and using value.
[summary of the invention]
The objective of the invention is to be the solution prior art problems, and a kind of big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode that obtains uniform electric field is provided.This electrode and power feed-in mode can obtain the big area VHF-PECVD reaction chamber of practicability, solving by the heteropical problem of the caused plasma body of electric field non-uniform Distribution, and then promote the industrialization process of low-cost silicon-film solar-cell.
The present invention is for addressing the above problem, designed a kind of big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode that obtains uniform electric field, comprise parallel plate power electrode plates and power feed-in connectivity port, it is characterized in that described power feed-in connectivity port is positioned at the back side of power electrode plates, the front of power electrode plates is relative with substrate S.
Described power feed-in connectivity port can be single-point or multiple spot.
Described single-point power feed-in connectivity port is positioned at the central position at the power electrode plates back side.
Described multiple spot power feed-in connectivity port can be 2 points, 4 points, 6 or 8 etc.Each port phase place equal amplitudes of described multiple spot power feed-in connectivity port equates.
Two points of described 2 power feed-in connectivity ports generally should place on the battery lead plate planar longitudinal cenlerline, and are the placement of diad symmetry with the cross central line.
Four points of described 4 power feed-in connectivity ports, generally placing with battery lead plate planar longitudinal cenlerline and cross central line respectively is on four points of diad.
Described power electrode plates can be solid flat board, also can be the parallel-plate electrode with shower-head form of aperture.The shape of described power electrode plates can be shapes such as circle, square or rectangle.
The invention has the beneficial effects as follows: the back feed-in type power electrode utilizes the optimization of electrode power feed-in port position to distribute, the logarithmic singularity effect and the electromotive force standing wave effect that have suppressed near the electromotive force of feedthrough electrode inbound port, make the electric field distribution homogeneity obtain bigger improvement, thereby can avoid because the non-uniform electric problem that adopts electrode edge power feed-in mode to cause.The invention solves the homogeneity question of broad-area electrode plate Potential distribution, lay a good foundation, can promote silicon thin-film battery and film transistor matrix technology industrialization process effectively for researching and developing big area VHF-PECVD thin film deposition and etching system.
[description of drawings]
Fig. 1 is a back feed-in type parallel plate electrode single-point center power feed-in PECVD reaction chamber synoptic diagram;
Fig. 2 is a back feed-in type parallel plate electrode single-point center power feed-in structure synoptic diagram;
Fig. 3 is a back feed-in type parallel plate electrode power load point position X-Y plane distribution schematic diagram;
Fig. 4 is the vacuum electric field distribution synoptic diagram between the feed electrode of back feed-in type parallel plate single-point center;
Fig. 5 is 2 feed-in PECVD of back feed-in type parallel plate electrode reaction chamber synoptic diagram;
Fig. 6 is 2 power feed-in structures of back feed-in type parallel plate electrode synoptic diagram;
Fig. 7 is 2 power feed-ins (I) X-Y plane position distribution synoptic diagram;
Fig. 8 is the interelectrode vacuum electric field distribution of 2 power feed-ins (I) synoptic diagram;
Fig. 9 is 2 power feed-ins (II) X-Y plane position distribution synoptic diagram;
Figure 10 is a vacuum electric field distribution synoptic diagram between 2 power feed-ins (II) 40.68MHz excitation frequency lower electrode;
Figure 11 is a vacuum electric field distribution synoptic diagram between 2 power feed-ins (II) 54.24MHz excitation frequency lower electrode;
Figure 12 is 4 power feed-in structures of back feed-in type parallel plate electrode synoptic diagram;
Figure 13 is 4 power feed-ins (I) X-Y plane position distribution synoptic diagram;
Figure 14 is 4 power feed-ins (I) vacuum electric field distribution synoptic diagram;
Figure 15 is 4 power feed-ins (II) X-Y plane position distribution synoptic diagram;
Figure 16 is a vacuum electric field distribution synoptic diagram between 4 power feed-ins (II) 40.68MHz excitation frequency electrode;
Figure 17 is a vacuum electric field distribution synoptic diagram between 4 power feed-ins (II) 60MHz excitation frequency electrode;
Figure 18 is 4 power feed-ins (III) X-Y plane position distribution synoptic diagram;
Figure 19 is 4 power feed-ins (III) vacuum electric field distribution synoptic diagram.
[embodiment]
Be described in detail with reference to accompanying drawing below in conjunction with embodiments of the invention.
The load point quantity of power power-supply, position are to influence the inhomogeneity important parameter of electric field distribution, the homogeneity that the present invention improves electric field by the quantity and the position of optimization design back feed-in type power electrode load point.Shown in Fig. 1,5, use big area back feed-in type parallel plate electrode VHF-PECVD reaction chamber of the present invention, form by ground connection reaction chamber R, ground-electrode G, dull and stereotyped power electrode P, power transmission line L, power electrode and power transit line connectivity port D.The connectivity port D of power transit line of the present invention and power electrode is positioned at the back side of power electrode, and the front of power electrode is relative with substrate S.
The present invention is according to the shape and size of electrode, optimization design power feed-in connectivity port quantity and position, distribute by of the optimization of power feed-in port position at the parallel plate power electrode back side, suppress the electric field non-uniform Distribution that near the electromotive force logarithmic singularity effect of electromotive force standing wave effect and power feedback port is caused, thereby can obtain uniform relatively Potential Distributing between electrode.
Back feed-in type parallel plate electrode of the present invention mainly comprises single-point center back feed-in type parallel plate electrode and multiple spot distribution back feed-in type parallel plate electrode.This parallel-plate electrode can be that solid flat board also can be the parallel-plate electrode with shower-head form of aperture.Shape generally can be circle, square and rectangle.
Single-point of the present invention center back feed-in type electrode promptly only have the connectivity port of a power transmission line and power electrode at the parallel-plate electrode back side, and the connectivity port is positioned at the central position (as shown in Figures 2 and 3) of parallel-plate electrode.For square, orthogonal parallel-plate electrode or circular parallel-plate electrode, the load point of single-point power feed-in is an optimum way in the electrode centers position.For the square meter level PECVD system of production application, the electrode used therein shape is generally rectangle.The yardstick of electrode mainly refers to the length and the width of electrode.Satisfy under the area certain condition at electrode, the length and width yardstick of electrode can carry out appropriate design according to reaction chamber structure.
Promptly there are two or more power input ports in multiple spot distribution back feed-in type electrode of the present invention at the parallel-plate electrode back side, each port distribution is in different position, the electrode back side, and each port phase place equal amplitudes equates.
Described multiple spot distribution back feed-in type electrode can be: 2 points, and 4 points, 6 points, 8 or the like.Electrode shown in Figure 6 has adopted 2 back feed-in type electrode structures, and two power feed-in port position is placed on the X-axis and is that the symmetry axis symmetry is placed with the Y-axis.Electrode shown in Figure 13 has adopted 4 power feed-in type electrode structures, and the position of its four power feed-in ports is that symmetry axis is symmetrically distributed with X-axis and Y-axis.
The present invention can adopt in the PECVD reaction chamber of any excitation frequency and arbitrary area size, and can obtain relative uniform electric field distribution under the condition of hertzian wave vacuum wavelength 1/4th less than the length of electrode that guarantees power supply excitation frequency correspondence
The back feed-in type parallel plate power electrode design that obtains uniform electric field of the present invention according to basic theory of electromagnetic field knowledge, is utilized the optimization of power load point quantity and position distribution, can reach and improve the inhomogeneity purpose of electric field distribution.
Back feed-in type parallel plate electrode single-point center power feed-in structure (as shown in Figure 2)
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts the feed-in of backside single-point, and electrode structure is as implementing shown in the illustration 1.Power load point position as shown in Figure 3, load point D1 is positioned at x-y planar center.Adopt the PECVD reaction chamber of the back feed-in type parallel plate electrode structure of this example design, use the excitation frequency power supply of 40.68MHz, between its electrode electric field distribution Theoretical Calculation result as shown in Figure 4, the electric field heterogeneity is within ± 4%.
Embodiment 2
2 power feed-ins of back feed-in type parallel plate electrode (I) structure
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts 2 feed-ins of backside, and electrode structure is as shown in Figure 6.Power load point position as shown in Figure 7, the x-y planimetric rectangular coordinates of load point D1 and D2 is respectively (40cm, 0) and (40cm, 0).Adopt the PECVD reaction chamber of the back feed-in type parallel plate electrode structure of this example design, use the excitation frequency power supply of 40.68MHz, the two ends equiphase, etc. the feed-in of amplitude power, between its electrode electric field distribution Theoretical Calculation result as shown in Figure 8, the electric field heterogeneity is within ± 5%.
Embodiment 3
2 power feed-ins of back feed-in type parallel plate electrode (II) structure
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts 2 feed-ins of backside, and electrode structure is as shown in Figure 6.Power load point position as shown in Figure 9, the x-y planimetric rectangular coordinates of load point D1 and D2 is respectively (25cm, 0) and (25cm, 0).Adopt the PECVD reaction chamber of the back feed-in type parallel plate electrode structure of this example design, use the excitation frequency power supply of 40.68MHz and 54.24MHz respectively, the two ends equiphase, etc. the feed-in of amplitude power, electric field distribution Theoretical Calculation result is shown in Figure 10,11 between its electrode, and the electric field heterogeneity is within ± 2.5% and ± 4.6%.
Embodiment 4
4 power feed-ins of back feed-in type parallel plate electrode (I) structure
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts 4 feed-ins of backside, and electrode structure is as shown in figure 12.Power load point position as shown in figure 13, the x-y planimetric rectangular coordinates of load point D1, D2 and D3, D4 be respectively (33cm ,-30cm), (33cm ,-30) and (33cm, 30cm), (33cm, 30cm).Adopt the PECVD reaction chamber of the back feed-in type parallel plate electrode structure of this example design, use the excitation frequency power supply of 40.68MHz, four end equiphases, etc. the feed-in of amplitude power, between its electrode electric field distribution Theoretical Calculation result as shown in figure 14, within electric field heterogeneity ± 4%.
Embodiment 5
4 power feed-ins of back feed-in type parallel plate electrode (II) structure
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=80cm, high H=10cm adopts 4 feed-ins of backside, and electrode structure is as shown in figure 12.Power load point position as shown in figure 15, the x-y planimetric rectangular coordinates of load point D1, D2 and D3, D4 be respectively (27cm ,-10cm), (27cm ,-10) and (27cm, 10cm), (27cm, 10cm).Adopt the PECVD reaction chamber of the back feed-in type parallel plate electrode structure of this example design, use the excitation frequency power supply of 40.68MHz and 60MHz respectively, four end equiphases, etc. the feed-in of amplitude power, electric field distribution Theoretical Calculation result is shown in Figure 16,17 between its electrode, and the electric field heterogeneity is respectively within ± 2.5% and ± 5.5%.
Embodiment 6
4 power feed-ins of back feed-in type parallel plate electrode (III) structure
The long L=120cm of rectangle parallel-plate electrode in this example, wide W=100cm, high H=10cm adopts 4 feed-ins of backside, and electrode structure is as shown in figure 12.Power load point position as shown in figure 18, the x-y planimetric rectangular coordinates of load point D1, D2 and D3, D4 be respectively (25cm ,-15cm), (25cm ,-15) and (25cm, 15cm), (25cm, 15cm).Adopt the PECVD reaction chamber of the back feed-in type parallel plate electrode structure of this example design, use the excitation frequency power supply of 40.68MHz, four end equiphases, etc. the feed-in of amplitude power, between its electrode electric field distribution Theoretical Calculation result as shown in figure 19, the electric field heterogeneity is within ± 3.5%.
Claims (4)
1, a kind of big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode that obtains uniform electric field, comprise parallel plate power electrode plates and multiple spot power feed-in connectivity port, it is characterized in that described multiple spot power feed-in connectivity port is 2 points, be positioned at the back side of power electrode plates, the front of power electrode plates is relative with substrate S; Described power electrode plates is the parallel-plate electrode with shower-head form of aperture; Each port phase place equal amplitudes of described 2 power feed-in connectivity ports equates; Two points of described 2 power feed-in connectivity ports place on the longitudinal cenlerline of power electrode plates back side plane, and are the placement of diad symmetry with the cross central line.
2, the big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode that obtains uniform electric field according to claim 1, what it is characterized in that described power electrode plates is shaped as circle, square or rectangle.
3, a kind of big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode that obtains uniform electric field, comprise parallel plate power electrode plates and multiple spot power feed-in connectivity port, it is characterized in that described multiple spot power feed-in connectivity port is 4 points, be positioned at the back side of power electrode plates, the front of power electrode plates is relative with substrate S; Described power electrode plates is the parallel-plate electrode with shower-head form of aperture; Each port phase place equal amplitudes of described 4 power feed-in connectivity ports equates; Four points of described 4 power feed-in connectivity ports place respectively on four points that longitudinal cenlerline and cross central line with the power electrode plates back side plane be diad.
4, the big area VHF-PECVD reaction chamber back feed-in type parallel plate power electrode that obtains uniform electric field according to claim 3, what it is characterized in that described power electrode plates is shaped as circle, square or rectangle.
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| CN102098864B (en) * | 2009-12-09 | 2013-01-23 | 财团法人工业技术研究院 | Plasma generating device |
| CN101800148A (en) * | 2010-03-17 | 2010-08-11 | 南开大学 | Tile type power electrode of large-area VHF-PECVD reaction chamber capable of obtaining uniform electric field |
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-
2007
- 2007-11-19 CN CNB2007101502293A patent/CN100567567C/en not_active Expired - Fee Related
Non-Patent Citations (4)
| Title |
|---|
| VHF-PECVD技术制备大面积硅基薄膜的研究. 王凯杰等.第八届全国光伏会议暨中日光伏论坛论文集. 2004 |
| VHF-PECVD技术制备大面积硅基薄膜的研究. 王凯杰等.第八届全国光伏会议暨中日光伏论坛论文集. 2004 * |
| 薄膜材料制备原理、技术及应用. 唐伟忠，99-100，冶金工业出版社. 1998 |
| 薄膜材料制备原理、技术及应用. 唐伟忠，99-100，冶金工业出版社. 1998 * |
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|---|---|---|---|---|
| US9960011B2 (en) | 2011-08-01 | 2018-05-01 | Plasmart Inc. | Plasma generation apparatus and plasma generation method |
| US9734990B2 (en) | 2011-10-13 | 2017-08-15 | Korea Advanced Institute Of Science And Technology | Plasma apparatus and substrate-processing apparatus |
| US9281176B2 (en) | 2012-06-29 | 2016-03-08 | Taewon Lighting Co., Ltd. | Microwave plasma lamp with rotating field |
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