CN102088031B - Nldmos器件及其制造方法 - Google Patents
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Abstract
一种NLDMOS器件,包括浮置-P型结构,第一场氧区,第二场氧区,N型漂移区,第一场氧区和第二场氧区位于N型漂移区之上相对设置,所述浮置-P型结构位于N型漂移区的中部,所述的第一场氧区和第二场氧区不是连在一起,两者之间的有源区的宽度配合注入浮置-P型结构的长度。采用本发明的结构,不但可以提高半导体器件的击穿电压,而且有效地降低了导通电阻,同时减小了对高能注入的需求,降低了对工艺机台的限制,生产中容易实现。
Description
【技术领域】
本发明涉及一种NLDMOS(N型横向双扩散金属氧化物半导体)器件,尤其涉及一种具有较高击穿电压和较低导通电阻的NLDMOS及其制造方法。
【背景技术】
随着半导体器件操作电压的不断提高,为了获得更高的器件耐压及较小的导通电阻,就引入了Super Junction(超结)概念。以NLDMOS(N型横向双扩散金属氧化物半导体)为例,首先为了获得较小的导通电阻而形成了浓度较高的N型漂移区,由于漂移区浓度较高使器件击穿值偏低,这时在N型漂移区内形成一定的P型区域。该P型区域一般是在漂移区的表面,沿沟道方向呈条状分布。通过引入的P型杂质与漂移区的N型杂质达到电荷平衡,以增强漂移区的耗尽,提高器件的击穿电压。但是由于该P型区是通过小能量注入到漂移区表面,电流只能从其下方的漂移区流过。而且为使其能够在纵向上耗尽整个漂移区,P型区的结深就不能太浅,因此必须经过一定的热过程推阱形成,这样就会使得N型漂移区杂质浓度受到P型杂质的影响而降低,抬高了导通电阻。而且经过热过程形成的P型区由于横扩使其尺寸增大,同样减小了电流流经的路径,再次抬高了导通电阻。
【发明内容】
有鉴于此,有必要针对NLDMOS器件导通电阻较大和击穿电压较小的问题,提供一种能提高击穿电压和降低导通电阻的NLDMOS器件。
此外,还有必要提供一种提高击穿电压和降低导通电阻的NLDMOS器件的制造方法。
一种NLDMOS器件,包括浮置-P型结构,第一场氧区,第二场氧区,N型漂移区,第一场氧区和第二场氧区位于N型漂移区之上相对设置,所述浮置-P型结构位于N型漂移区的中部沿着N型漂移区的沟道方向,所述的第一场氧区和第二场氧区之间的有源区的宽度不小于浮置-P型结构的长度,浮置-P型在N型漂移区的中部。
优选地,所述浮置-P型结构的数量不少于两个。
优选地,所述浮置-P型结构在版图上为条状,横截面为长方形。
优选地,所述浮置-P型结构的横截面为圆形。
优选地,所述第一场氧区和所述第二场氧区长度不一样。
一种NLDMOS器件制造方法,所述NLDMOS器件包括浮置-P型结构,第一场氧区,第二场氧区,N型漂移区,第一场氧区和第二场氧区位于N型漂移区之上相对设置,包括五个步骤:
步骤一:采用常规的外延生产工艺在埋氧层上形成外延层;
步骤二:采用常规的MOS工艺的进行阱注入,形成所述的N型漂移区;
步骤三:通过生长形成所述第一场氧区和所述第二场氧区,所述第一场氧区和第二场氧区之间就是有源区,该有源区尺寸配合将要注入的浮置-P型结构的长度;
步骤四:注入源栅和漏区;
步骤五:透过所述第一场氧区和所述第二场氧区之间的有源区将浮置-P型结构植入所述N型漂移区的中部。
优选地,所述浮置-P型结构的注入能量为200Kev~2000Kev。
采用上述结构,可以提高NLDMOS器件的击穿电压和降低导通电阻,降低了制作过程中对光刻胶厚度的要求,以及对高能注入机的要求。
【附图说明】
图1是本发明实施例NLDMOS器件结构示意图。
图2是图1沿着A-A’方向的截面示意图。
【具体实施方式】
如图1所示,是本发明的NLDMOS器件的结构示意图。该NLDMOS器件包括衬底引出101,源区引出103,栅极引出105,第一场氧区107,第二场氧区109,漏端引出111,高压N阱做成的N型漂移区113,浮置-P型结构(浮置P结构)115,埋氧层117,高压P阱做成的衬底119,N型漂移区113位于埋氧层117之上,衬底119和N型漂移区113相邻位于埋氧层117之上,浮置-P型结构115置于N型漂移区113之内。
根据各部分杂质浓度的调整,上述NLDMOS器件的击穿电压范围可达100V~1000V。
浮置-P型结构115沿着N型漂移区113沟道的方向位于其中部,浮置-P型结构115的数量不限于一个,可以有两个以上(如图2所示)。浮置-P型结构115在版图上为条状,横截面为长方形。浮置-P型结构115通过大能量注入到N型漂移区113的中部,注入能量为200Kev~2000Kev,注入能量可根据N型漂移区113的杂质分布及外延工艺的厚度作适当调整。浮置-P型结构115的剂量需要和N型漂移区113形成电荷平衡。浮置-P型结构115位于N型漂移区113的中部,可以在横向和纵向上耗尽N型杂质,有利于N型漂移区113的耗尽,提高器件的击穿电压,降低导通电阻。并且,电流可以在浮置-P型结构115的上方和下方的N型漂移区113沿着沟道流过,电流流经的路径较大。采用上述结构,漂移区的杂质浓度还可以适当提高,以继续降低电阻。
浮置-P型结构115横截面不限于长方形,只要有利于和N型漂移区耗尽的其他形状也可以,如圆形。
第一场氧区107和第二场氧区109在N型漂移区113之上相对设置,第一场氧区107和第二场氧区109两者没有完全覆盖N型漂移区113,因此,两者之间仍然是有源区。两者之间的有源区的宽度配合注入浮置-P型结构115的长度。第一场氧区107和第二场氧区109的长度可以不一样。
传统做法中,100V以上的LDMOS器件整个漂移区都被场氧区覆盖,由于浮置-P型结构要植入N型漂移区的中部,因此它必须用很高的能量注入,这就要求注入机必须能够做高能注入,同时光刻胶要足够厚,以阻挡浮置-P型注入到其它区域。在本实施方式中,第一场氧区107和第二场氧区109两者之间做成有源区,此有源区区域的氧化层较薄,方便了浮置-P型结构115的注入,因此降低了对注入机的能量和光刻胶厚度的要求,从而可以形成宽度及间距更小的浮置-P型结构,浮置-P型结构注入峰值更深,在生产中容易实现。
根据本发明的一种实施方式,上述NLDMOS器件的制造方法包括:
步骤一:采用常规的外延生产工艺在埋氧层上形成外延层;
步骤二:采用常规的MOS工艺的进行阱注入,形成所述的N型漂移区;
步骤三:通过生长形成所述第一场氧区和所述第二场氧区,所述第一场氧区和第二场氧区之间就是有源区,该有源区尺寸配合将要注入的浮置-P型结构的长度;
步骤四:注入源栅和漏区;
步骤五:透过所述第一场氧区和所述第二场氧区之间的有源区将浮置-P型结构植入所述N型漂移区的中部。
本发明的实施例的器件是在SOI硅片(绝缘体硅片)上做的,故有埋氧层。本领域的技术人员应当明了采用SOI硅片是为了增强器件的隔离效果,不能理解为对本发明的限制。
以上五个步骤只是给出了主要的步骤,本领域的技术人员应该对其中未提及公知细节明了。
本发明实施例的浮置-P型结构的注入在源漏的注入之后,使浮置-P型结构经受更少的热过程,避免了P型杂质扩散导致N型杂质浓度降低,及浮置-P型结构尺寸变大等因素抬高导通电阻。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (7)
1.一种NLDMOS器件,包括浮置-P型结构,第一场氧区,第二场氧区,N型漂移区,第一场氧区和第二场氧区位于N型漂移区之上相对设置,其特征在于:所述浮置-P型结构位于N型漂移区的中部沿着N型漂移区的沟道方向,所述的第一场氧区和第二场氧区之间是有源区,所述有源区的宽度不小于浮置-P型结构的长度,浮置-P型在N型漂移区的中部。
2.如权利要求1所述的NLDMOS器件,其特征在于:所述浮置-P型结构的数量不少于两个。
3.如权利要求1所述的NLDMOS器件,其特征在于:所述浮置-P型结构在版图上为条状,横截面为长方形。
4.如权利要求1所述的NLDMOS器件,其特征在于:所述浮置-P型结构的横截面为圆形。
5.如权利要求1所述的NLDMOS器件,其特征在于:所述第一场氧区和所述第二场氧区长度不一样。
6.一种NLDMOS器件制造方法,所述NLDMOS器件包括浮置-P型结构,第一场氧区,第二场氧区,N型漂移区,第一场氧区和第二场氧区位于N型漂移区之上相对设置,其特征在于:
步骤一:采用常规的外延生产工艺在埋氧层上形成外延层;
步骤二:采用常规的MOS工艺的进行阱注入,形成所述的N型漂移区;
步骤三:通过生长形成所述第一场氧区和所述第二场氧区,所述第一场氧区和第二场氧区之间就是有源区,该有源区尺寸配合将要注入的浮置-P型结构的长度;
步骤四:注入源栅和漏区;
步骤五:透过所述第一场氧区和所述第二场氧区之间的有源区将浮置-P型结构植入所述N型漂移区的中部;
所述浮置-P型结构的植入步骤在源漏的注入步骤之后进行。
7.如权利要求6所述的NLDMOS器件制造方法,其特征在于:所述浮置-P型结构的注入能量为200Kev~2000Kev。
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