CN102082102A - 形成柔性应力消除缓冲区的半导体器件和方法 - Google Patents
形成柔性应力消除缓冲区的半导体器件和方法 Download PDFInfo
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- CN102082102A CN102082102A CN2010105596319A CN201010559631A CN102082102A CN 102082102 A CN102082102 A CN 102082102A CN 2010105596319 A CN2010105596319 A CN 2010105596319A CN 201010559631 A CN201010559631 A CN 201010559631A CN 102082102 A CN102082102 A CN 102082102A
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Abstract
Description
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US12/625,975 US8034661B2 (en) | 2009-11-25 | 2009-11-25 | Semiconductor device and method of forming compliant stress relief buffer around large array WLCSP |
US12/625975 | 2009-11-25 |
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CN102082102A true CN102082102A (zh) | 2011-06-01 |
CN102082102B CN102082102B (zh) | 2015-09-09 |
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US20110121449A1 (en) | 2011-05-26 |
SG171522A1 (en) | 2011-06-29 |
TWI511211B (zh) | 2015-12-01 |
US8912648B2 (en) | 2014-12-16 |
US9508621B2 (en) | 2016-11-29 |
US20150145126A1 (en) | 2015-05-28 |
US8034661B2 (en) | 2011-10-11 |
TW201125051A (en) | 2011-07-16 |
CN102082102B (zh) | 2015-09-09 |
SG183777A1 (en) | 2012-09-27 |
US20120001325A1 (en) | 2012-01-05 |
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