CN102074586A - 快速恢复二极管 - Google Patents
快速恢复二极管 Download PDFInfo
- Publication number
- CN102074586A CN102074586A CN2010105519755A CN201010551975A CN102074586A CN 102074586 A CN102074586 A CN 102074586A CN 2010105519755 A CN2010105519755 A CN 2010105519755A CN 201010551975 A CN201010551975 A CN 201010551975A CN 102074586 A CN102074586 A CN 102074586A
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- sublayer
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- diode
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000011084 recovery Methods 0.000 title claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004411 aluminium Substances 0.000 claims abstract description 7
- 239000002019 doping agent Substances 0.000 claims description 54
- 235000012431 wafers Nutrition 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 22
- 230000007547 defect Effects 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 11
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 10
- 230000002950 deficient Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 helium ion Chemical class 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09175421A EP2320452B1 (en) | 2009-11-09 | 2009-11-09 | Fast recovery diode and its manufacturing method |
EP09175421.8 | 2009-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102074586A true CN102074586A (zh) | 2011-05-25 |
CN102074586B CN102074586B (zh) | 2014-11-19 |
Family
ID=41730958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010551975.5A Active CN102074586B (zh) | 2009-11-09 | 2010-11-09 | 快速恢复二极管 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8395244B2 (zh) |
EP (1) | EP2320452B1 (zh) |
JP (1) | JP5769950B2 (zh) |
CN (1) | CN102074586B (zh) |
AT (1) | ATE529888T1 (zh) |
ES (1) | ES2374901T3 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105960758A (zh) * | 2014-02-05 | 2016-09-21 | 罗伯特·博世有限公司 | 具有自钳位晶体管的整流器电路 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2234144B1 (en) * | 2009-03-25 | 2018-08-22 | ABB Schweiz AG | Method for manufacturing a power semiconductor device |
EP2535940B1 (en) * | 2011-06-14 | 2013-08-21 | ABB Technology AG | Bipolar diode and method for manufacturing the same |
DE102012020785B4 (de) * | 2012-10-23 | 2014-11-06 | Infineon Technologies Ag | Erhöhung der Dotierungseffizienz bei Protonenbestrahlung |
CN104701386B (zh) * | 2015-02-11 | 2018-05-29 | 株洲南车时代电气股份有限公司 | 集成门极换流晶闸管配套用快恢复二极管及其制造方法 |
EP3196943A1 (en) * | 2016-01-22 | 2017-07-26 | ABB Technology AG | Bipolar diode and method for manufacturing such a diode |
JP7244306B2 (ja) | 2019-03-08 | 2023-03-22 | 株式会社東芝 | 半導体装置 |
FR3118529B1 (fr) | 2020-12-24 | 2024-01-05 | St Microelectronics Tours Sas | Diodes fines |
CN116799039B (zh) * | 2023-06-30 | 2024-03-08 | 海信家电集团股份有限公司 | 快恢复二极管 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0361320A2 (de) * | 1988-09-27 | 1990-04-04 | Asea Brown Boveri Aktiengesellschaft | Leistungshalbleiterdiode |
US6261874B1 (en) * | 2000-06-14 | 2001-07-17 | International Rectifier Corp. | Fast recovery diode and method for its manufacture |
DE10261424B3 (de) * | 2002-12-30 | 2004-07-01 | Infineon Technologies Ag | Verfahren zum Herstellen eines Emitters mit niedrigem Emitterwirkungsgrad |
JP2009521816A (ja) * | 2005-12-27 | 2009-06-04 | キュースピード セミコンダクター インコーポレーテッド | 高速回復整流器構造体の装置および方法 |
CN101504954A (zh) * | 2009-03-02 | 2009-08-12 | 吉林华微电子股份有限公司 | 一种高压功率快恢复二极管及其制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5061972A (en) * | 1988-12-14 | 1991-10-29 | Cree Research, Inc. | Fast recovery high temperature rectifying diode formed in silicon carbide |
DE4342482C2 (de) * | 1993-12-13 | 1995-11-30 | Siemens Ag | Schnelle Leistungshalbleiterbauelemente |
EP1014453B1 (en) | 1997-08-14 | 2016-04-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
US7015562B2 (en) * | 2000-06-28 | 2006-03-21 | Infineon Technologies Ag | High-voltage diode |
DE10349582B4 (de) | 2003-10-24 | 2008-09-25 | Infineon Technologies Ag | Halbleiterdiode sowie dafür geeignetes Herstellungsverfahren |
JP2006156936A (ja) * | 2004-10-25 | 2006-06-15 | Matsushita Electric Ind Co Ltd | 定電圧ダイオードおよびその製造方法 |
DE102005031398A1 (de) * | 2005-07-05 | 2007-01-11 | Infineon Technologies Ag | Diode |
JP2008091705A (ja) | 2006-10-03 | 2008-04-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
DE102007001108B4 (de) * | 2007-01-04 | 2012-03-22 | Infineon Technologies Ag | Diode und Verfahren zu ihrer Herstellung |
JP5249532B2 (ja) * | 2007-06-27 | 2013-07-31 | 一般財団法人電力中央研究所 | 炭化珪素バイポーラ型半導体装置 |
-
2009
- 2009-11-09 ES ES09175421T patent/ES2374901T3/es active Active
- 2009-11-09 AT AT09175421T patent/ATE529888T1/de not_active IP Right Cessation
- 2009-11-09 EP EP09175421A patent/EP2320452B1/en active Active
-
2010
- 2010-11-09 CN CN201010551975.5A patent/CN102074586B/zh active Active
- 2010-11-09 US US12/942,410 patent/US8395244B2/en active Active
- 2010-11-09 JP JP2010250658A patent/JP5769950B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0361320A2 (de) * | 1988-09-27 | 1990-04-04 | Asea Brown Boveri Aktiengesellschaft | Leistungshalbleiterdiode |
US6261874B1 (en) * | 2000-06-14 | 2001-07-17 | International Rectifier Corp. | Fast recovery diode and method for its manufacture |
DE10261424B3 (de) * | 2002-12-30 | 2004-07-01 | Infineon Technologies Ag | Verfahren zum Herstellen eines Emitters mit niedrigem Emitterwirkungsgrad |
JP2009521816A (ja) * | 2005-12-27 | 2009-06-04 | キュースピード セミコンダクター インコーポレーテッド | 高速回復整流器構造体の装置および方法 |
CN101504954A (zh) * | 2009-03-02 | 2009-08-12 | 吉林华微电子股份有限公司 | 一种高压功率快恢复二极管及其制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105960758A (zh) * | 2014-02-05 | 2016-09-21 | 罗伯特·博世有限公司 | 具有自钳位晶体管的整流器电路 |
Also Published As
Publication number | Publication date |
---|---|
US20110108953A1 (en) | 2011-05-12 |
US8395244B2 (en) | 2013-03-12 |
EP2320452A1 (en) | 2011-05-11 |
JP5769950B2 (ja) | 2015-08-26 |
CN102074586B (zh) | 2014-11-19 |
ES2374901T3 (es) | 2012-02-23 |
JP2011101021A (ja) | 2011-05-19 |
ATE529888T1 (de) | 2011-11-15 |
EP2320452B1 (en) | 2011-10-19 |
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PB01 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180428 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210617 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231231 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |