CN101847579B - 用于制造功率半导体器件的方法 - Google Patents
用于制造功率半导体器件的方法 Download PDFInfo
- Publication number
- CN101847579B CN101847579B CN201010159615.0A CN201010159615A CN101847579B CN 101847579 B CN101847579 B CN 101847579B CN 201010159615 A CN201010159615 A CN 201010159615A CN 101847579 B CN101847579 B CN 101847579B
- Authority
- CN
- China
- Prior art keywords
- irradiation
- master
- layer
- diffusion
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 72
- 238000009792 diffusion process Methods 0.000 claims abstract description 48
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000002344 surface layer Substances 0.000 claims abstract description 41
- 239000002245 particle Substances 0.000 claims abstract description 35
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 20
- 230000007547 defect Effects 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000001307 helium Substances 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- -1 helium ion Chemical class 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 4
- 235000012431 wafers Nutrition 0.000 description 44
- 230000008021 deposition Effects 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007775 late Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09156116.7 | 2009-03-25 | ||
EP09156116 | 2009-03-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101847579A CN101847579A (zh) | 2010-09-29 |
CN101847579B true CN101847579B (zh) | 2016-08-03 |
Family
ID=40911129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010159615.0A Active CN101847579B (zh) | 2009-03-25 | 2010-03-25 | 用于制造功率半导体器件的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8415239B2 (zh) |
EP (1) | EP2234144B1 (zh) |
CN (1) | CN101847579B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2234144B1 (en) * | 2009-03-25 | 2018-08-22 | ABB Schweiz AG | Method for manufacturing a power semiconductor device |
DE102012020785B4 (de) * | 2012-10-23 | 2014-11-06 | Infineon Technologies Ag | Erhöhung der Dotierungseffizienz bei Protonenbestrahlung |
CN105470130B (zh) * | 2014-09-03 | 2018-06-29 | 无锡华润华晶微电子有限公司 | 一种局部扩铂二极管及其制作方法 |
CN105702746A (zh) * | 2014-11-26 | 2016-06-22 | 国家电网公司 | 一种快恢复二极管及其制作方法 |
CN106898548A (zh) * | 2015-12-21 | 2017-06-27 | 北京大学 | 一种室温环境下激励硅中金属原子扩散的方法 |
CN111106012B (zh) * | 2019-12-20 | 2022-05-17 | 电子科技大学 | 一种实现半导体器件局域寿命控制的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4026797A1 (de) * | 1990-08-24 | 1992-02-27 | Daimler Benz Ag | Verfahren zur erzeugung von rekombinationszentren in dem halbleiterkoerper eines halbleiterbauelements |
CN1244725A (zh) * | 1998-08-06 | 2000-02-16 | 亚瑞亚·勃朗勃威力有限公司 | 调节半导体元件中的载体寿命的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9709642D0 (en) * | 1997-05-14 | 1997-07-02 | Plessey Semiconductors Ltd | Improvements in or relating to semiconductor devices |
US7485920B2 (en) * | 2000-06-14 | 2009-02-03 | International Rectifier Corporation | Process to create buried heavy metal at selected depth |
US6358825B1 (en) * | 2000-11-21 | 2002-03-19 | Fairchild Semiconductor Corporation | Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control |
US7719054B2 (en) * | 2006-05-31 | 2010-05-18 | Advanced Analogic Technologies, Inc. | High-voltage lateral DMOS device |
EP2234144B1 (en) * | 2009-03-25 | 2018-08-22 | ABB Schweiz AG | Method for manufacturing a power semiconductor device |
EP2320451B1 (en) * | 2009-11-09 | 2013-02-13 | ABB Technology AG | Fast recovery Diode |
ES2374901T3 (es) * | 2009-11-09 | 2012-02-23 | Abb Technology Ag | Diodo de recuperación rápida y método de fabricarlo. |
-
2010
- 2010-03-04 EP EP10155457.4A patent/EP2234144B1/en active Active
- 2010-03-25 CN CN201010159615.0A patent/CN101847579B/zh active Active
- 2010-03-25 US US12/731,977 patent/US8415239B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4026797A1 (de) * | 1990-08-24 | 1992-02-27 | Daimler Benz Ag | Verfahren zur erzeugung von rekombinationszentren in dem halbleiterkoerper eines halbleiterbauelements |
CN1244725A (zh) * | 1998-08-06 | 2000-02-16 | 亚瑞亚·勃朗勃威力有限公司 | 调节半导体元件中的载体寿命的方法 |
Non-Patent Citations (1)
Title |
---|
Radiation-Enhanced Diffusion of Palladium for a Local Lifetime Control in Power Devices;Jan Vobecky et al;《IEEE TRANSACTIONS ON ELECTRON DEVICES》;20070630;第54卷(第6期);1521-1523 * |
Also Published As
Publication number | Publication date |
---|---|
EP2234144A1 (en) | 2010-09-29 |
US20100248462A1 (en) | 2010-09-30 |
EP2234144B1 (en) | 2018-08-22 |
CN101847579A (zh) | 2010-09-29 |
US8415239B2 (en) | 2013-04-09 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20180428 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20210617 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231231 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |
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TR01 | Transfer of patent right |