CN101982875B - Packaging structure of N substrate diode half bridges with common anodes in TO-220 - Google Patents
Packaging structure of N substrate diode half bridges with common anodes in TO-220 Download PDFInfo
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- CN101982875B CN101982875B CN2010102694663A CN201010269466A CN101982875B CN 101982875 B CN101982875 B CN 101982875B CN 2010102694663 A CN2010102694663 A CN 2010102694663A CN 201010269466 A CN201010269466 A CN 201010269466A CN 101982875 B CN101982875 B CN 101982875B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Abstract
The invention provides a packaging structure of N substrate diode half bridges with common anodes in TO-220, which is characterized by comprising an insulating heat conductive aluminium oxide ceramic substrate, wherein the right side of the aluminium oxide ceramic substrate is provided with two mutually independent metal layers; the opposite side of the aluminium oxide ceramic substrate is provided with at least a metal layer; the metal layers at the opposite side of the aluminium oxide ceramic substrate are connected with heating panels; the two metal layers at the right side of the aluminium oxide ceramic substrate are respectively connected with left leads and right leads; the N poles of two diodes are respectively connected on the left leads and the right leads and are two cathodes; and the P poles of the two diodes are respectively connected on the middle leads by aluminium wires and are common anodes. The packaging structure has simple process, low manufacturing difficulty and stable yield and reliability, ensures the diodes to have high effective heat release and is suitable for using the N substrate diodes to assemble the half-bridge devices with common anodes.
Description
Technical field
The present invention relates to a kind of encapsulating structure of common anode half-bridge in TO-220 that is consisted of by N base material Schottky diode or fast recovery diode, belong to the encapsulating structure technical field of diode component.
Background technology
Along with new forms of energy and Switching Power Supply are popularized and extensive use day by day, need a large amount of high performance high-frequency high-power rectifying devices that use.And in electronic circuitry design, the rectifying device of TO-220 packing forms is used more extensive.For making full-wave rectification and full bridge rectifier economic the simplification rationally in design is used, need to jointly form with common cathode, the common anode Half bridge rectifier device of TO-220 packing forms, and both performances need in full accord.As shown in Figure 1, full bridge rectifier consists of common cathode half-bridge A and common anode half-bridge B by four rectifier diodes, and wherein said diode is Schottky diode or fast recovery diode.
The diode of high-frequency rectification device is take the N base material as main at present, being packaged into the common cathode half-bridge device is conventional encapsulation, such as Fig. 2, Fig. 3, shown in Figure 4, the encapsulating structure of common cathode half-bridge in TO-220 is as follows: the reverse side of middle leads 12 is connected with heating panel 2, the N utmost point of two diodes 3 is separately fixed on the front of middle leads 12, as common cathode, the P utmost point of two diodes 3 by aluminum steel 4 respectively with being connected of left side lead-in wire 11 and right side lead-in wire 13, as two anodes.
But when being packaged into the common anode half-bridge device with the N base diode, because polarity needs upside-down mounting on the contrary, but because the frame of the N region electrode of N base material and P region electrode are at grade, can cause short circuit when the upside-down mounting eutectic welds, upside-down mounting is brave in the P district connects so can only fill up with the copper packing 5 less than P district area.Such as Fig. 5, Fig. 6, shown in Figure 7, the encapsulating structure of tradition common anode half-bridge in TO-220 is as follows: the reverse side of middle leads 12 is connected with heating panel 2, the P utmost point of two diodes 3 connects respectively a copper packing 5, the area of copper packing 5 is long-pending less than the P pole-face, two copper packings 5 all are fixed on the front of middle leads 12, as the common anode utmost point, the N utmost point of two diodes 3 is connected with left side lead-in wire 11 and right side lead-in wire 13 respectively by brace 6, as two negative electrodes.This kind encapsulating structure technique is complicated, manufacture difficulty large, yields and reliability are unstable, wherein yields can only reach 60%～85%, and because copper packing 5 is less with the contact area of middle leads 12, so the efficiently radiates heat amount of diode reduces greatly, compare with the common cathode half-bridge device of same specification diode package, use current reduction 20～30%, cause using common anode, common cathode half-bridge device after the same specification diode package, can not mate use because performance is inconsistent.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, the encapsulating structure of a kind of N base diode common anode half-bridge in TO-220 is provided.
Purpose of the present invention is achieved through the following technical solutions:
The encapsulating structure of N base diode common anode half-bridge in TO-220, characteristics are: the aluminium oxide ceramic substrate that comprises an insulating heat-conductive, the front of described aluminium oxide ceramic substrate is provided with two separate metal levels, the reverse side of aluminium oxide ceramic substrate is provided with at least one metal level, the metal level of aluminium oxide ceramic substrate reverse side is connected with heating panel, two metal levels in aluminium oxide ceramic substrate front are connected with the right side lead-in wire with the left side lead-in wire respectively, the N utmost point of two diodes is connected on left side lead-in wire and the right side lead-in wire, be two negative electrodes, the P utmost point of two diodes is connected on the middle leads by aluminum steel respectively, is the common anode utmost point.
Further, the above-mentioned encapsulating structure of N base diode common anode half-bridge in TO-220, wherein, described diode is Schottky diode or fast recovery diode.
Further, the above-mentioned encapsulating structure of N base diode common anode half-bridge in TO-220, wherein, be connected by Sb5Pb92.5Ag2.5 scolder sintering between the metal level of described aluminium oxide ceramic substrate reverse side and the heating panel, all be connected by Sb5Pb92.5Ag2.5 scolder sintering between two metal levels in described aluminium oxide ceramic substrate front and left side lead-in wire and the right side lead-in wire.
The substantive distinguishing features that technical solution of the present invention is outstanding and significant progressive being mainly reflected in:
1. after N base diode common anode half-bridge adopts above-mentioned encapsulating structure, compare with the common cathode half-bridge of the N base diode encapsulation of using same attribute, same specification, realized that electrical property, yields, reliability are in full accord, thus the difficult problem that device is selected when having solved the high frequency bridge rectifier design of rear road;
2. technique is simple, easy implements, and yields is up to more than 99%;
3. after N base diode common anode half-bridge adopts above-mentioned encapsulating structure, the diode specification of using with the common cathode half-bridge is identical, thereby make the easy enforcement of diode manufacturing process and simple and reliable process, high conformity, product qualified rate is high, cost is low, the mixed economy cost can reduce approximately 50%.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1 is the schematic diagram of full bridge rectifier in the background technology;
Fig. 2 is the main TV structure schematic diagram of the encapsulating structure of common cathode half-bridge in TO-220 in the background technology;
Fig. 3 is the left TV structure schematic diagram of Fig. 2;
Fig. 4 is the contour structures schematic diagram of the encapsulating structure of common cathode half-bridge in TO-220 in the background technology;
Fig. 5 is the main TV structure schematic diagram of the encapsulating structure of traditional common anode half-bridge in TO-220 in the background technology;
Fig. 6 is the left TV structure schematic diagram of Fig. 5;
Fig. 7 is the contour structures schematic diagram of the encapsulating structure of traditional common anode half-bridge in TO-220 in the background technology;
Fig. 8 is the decomposition texture schematic diagram of the encapsulating structure of N base diode common anode half-bridge of the present invention in TO-220;
Fig. 9 is the package assembly schematic diagram of the encapsulating structure of N base diode common anode half-bridge of the present invention in TO-220;
Figure 10 is the left TV structure schematic diagram of Fig. 9;
Figure 11 is the contour structures schematic diagram of the encapsulating structure of N base diode common anode half-bridge of the present invention in TO-220.
The implication of each Reference numeral sees the following form among the figure:
Embodiment
Such as Fig. 8, Fig. 9, Figure 10, shown in Figure 11, the encapsulating structure of N base diode common anode half-bridge in TO-220, the aluminium oxide ceramic substrate 1 that comprises an insulating heat-conductive, the obverse and reverse of aluminium oxide ceramic substrate 1 is provided with two separate metal levels, when using aluminium oxide ceramic substrate 1, do not need deliberately to distinguish positive and negative thereby can make, aluminium oxide ceramic substrate 1 plays insulation, the effect of heat conduction, two metal levels of aluminium oxide ceramic substrate 1 reverse side are connected with heating panel 2 sintering by the Sb5Pb92.5Ag2.5 scolder, two metal levels in aluminium oxide ceramic substrate 1 front are connected by Sb5Pb92.5Ag2.5 scolder and left side lead-in wire 11 13 sintering that are connected with the right side respectively, two Schottky diodes 3 are by conventional auto loading machine automatic bonding die on lead-in wire, wherein the N utmost point of two Schottky diodes 3 is connected on left side lead-in wire 11 and the right side lead-in wire 13, as two negative electrodes, the P utmost point of two Schottky diodes 3 is connected on the middle leads 12 by aluminum steel 4 respectively, as the common anode utmost point, heating panel 2 and lead-in wire are the electrolysis copper material.
When concrete encapsulation was made, the packaging technology flow process was as follows:
1) puts the Sb5Pb92.5Ag2.5 scolder at footing reverse side and the heating panel 2 of lead-in wire;
2) respectively heating panel 2, aluminium oxide ceramic substrate 1, lead-in wire are assembled in the frock mould successively, wherein aluminium oxide ceramic substrate 1 is between heating panel 2 and lead-in wire;
3) the frock mould after assembling is finished is sent into the chain-type sintering furnace sintering that meets Sb5Pb92.5Ag2.5 solder temperature curve, then takes out;
4) the N utmost point with two diodes 3 passes through conventional auto loading machine automatic bonding die on the front of left side lead-in wire 11 and right side lead-in wire 13, then the P utmost point with two diodes 3 is connected on the middle leads 12 by aluminum steel 4 respectively, last plastic packaging, zinc-plated, gradation, test, check, packing, warehouse-in.
In sum, the invention provides that a kind of technique is simple, manufacture difficulty is low, yields and reliability be stable, and the efficiently radiates heat amount of diode is high, can mate the encapsulating structure of N base diode common anode half-bridge in TO-220 that uses with the common cathode half-bridge device of using the same specification diode package.After N base diode common anode half-bridge adopts above-mentioned encapsulating structure, compare with the common cathode half-bridge of the N base diode encapsulation of using same attribute, same specification, realized that electrical property, yields, reliability are in full accord, thus the difficult problem that device is selected when having solved the high frequency bridge rectifier design of rear road.Simple, the easy enforcement of technique, yields are up to more than 99%.After N base diode common anode half-bridge adopts above-mentioned encapsulating structure, the diode specification of using with the common cathode half-bridge is identical, thereby make the easy enforcement of diode manufacturing process and simple and reliable process, high conformity, product qualified rate is high, cost is low, the mixed economy cost can reduce approximately 50%.
What need to understand is: the above only is preferred implementation of the present invention; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1.N the encapsulating structure of base diode common anode half-bridge in TO-220, it is characterized in that: the aluminium oxide ceramic substrate that comprises an insulating heat-conductive, the front of described aluminium oxide ceramic substrate is provided with two separate metal levels, the reverse side of aluminium oxide ceramic substrate is provided with at least one metal level, the metal level of aluminium oxide ceramic substrate reverse side is connected with heating panel, two metal levels in aluminium oxide ceramic substrate front are connected with the right side lead-in wire with the left side lead-in wire respectively, the N utmost point of two diodes is connected on left side lead-in wire and the right side lead-in wire, be two negative electrodes, the P utmost point of two diodes is connected on the middle leads by aluminum steel respectively, is the common anode utmost point.
2. the encapsulating structure of N base diode common anode half-bridge according to claim 1 in TO-220, it is characterized in that: described diode is Schottky diode or fast recovery diode.
3. the encapsulating structure of N base diode common anode half-bridge according to claim 1 in TO-220, it is characterized in that: be connected by Sb5Pb92.5Ag2.5 scolder sintering between the metal level of described aluminium oxide ceramic substrate reverse side and the heating panel, all be connected by Sb5Pb92.5Ag2.5 scolder sintering between two metal levels in described aluminium oxide ceramic substrate front and left side lead-in wire and the right side lead-in wire.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102694663A CN101982875B (en) | 2010-09-02 | 2010-09-02 | Packaging structure of N substrate diode half bridges with common anodes in TO-220 |
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| CN2010102694663A CN101982875B (en) | 2010-09-02 | 2010-09-02 | Packaging structure of N substrate diode half bridges with common anodes in TO-220 |
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| CN101982875A CN101982875A (en) | 2011-03-02 |
| CN101982875B true CN101982875B (en) | 2013-02-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105609483B (en) * | 2016-01-04 | 2018-08-21 | 重庆平伟实业股份有限公司 | The packaging technology of common-anode Schottky semiconductor |
| CN107425079B (en) * | 2017-09-15 | 2023-04-28 | 捷捷半导体有限公司 | Common-anode rectifying half-bridge chip and preparation method thereof |
| CN112713094A (en) * | 2020-12-30 | 2021-04-27 | 无锡格能微电子有限公司 | Common anode TO packaging process method |
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| US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
| US6975023B2 (en) * | 2002-09-04 | 2005-12-13 | International Rectifier Corporation | Co-packaged control circuit, transistor and inverted diode |
| CN201392836Y (en) * | 2009-03-25 | 2010-01-27 | 沈富德 | Flatly packaged half-control bridge arm device |
| CN101815395A (en) * | 2010-01-01 | 2010-08-25 | 绍兴科盛电子有限公司 | Trigger module applied to electronic ballast |
| CN201845767U (en) * | 2010-09-02 | 2011-05-25 | 徐永才 | Novel encapsulating structure of N-base diode anode-connected half-bridge in TO-220 |
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