CN101308838B - Flip LED integrated chip with high break-over voltage and production method - Google Patents
Flip LED integrated chip with high break-over voltage and production method Download PDFInfo
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- CN101308838B CN101308838B CN2008100286728A CN200810028672A CN101308838B CN 101308838 B CN101308838 B CN 101308838B CN 2008100286728 A CN2008100286728 A CN 2008100286728A CN 200810028672 A CN200810028672 A CN 200810028672A CN 101308838 B CN101308838 B CN 101308838B
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- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
The invention discloses a high break-over voltage LED flip-chip and the fabrication method thereof, which is easy to integrate, low in cost, good in heat dissipation effect and good in high voltage resistance. The integrated chip comprises a plurality of LED flip-chips(1) and a plurality of silicon bulks(2); each LED flip-chip(1)is composed of an underlay(10), an N type epitaxial layer(11) and a P type epitaxial layer(12); at least one heat conduction insulated layer is developed on each silicon bulk(2); metal layers(6) are deposited on the heat conduction insulated layers; the corresponding N type epitaxial layers(11) and P type epitaxial layers(12) of the LED flip-chips(1) are reversely welded respectively on two separate metal layers through weld beads(80,81). The LED flip-chips (1) are connected into a circuit through the metal layers (6). The fabrication method includes the steps of forming the heat conducting insulated layer, the metal layers and an LED flip-chip enclosure.
Description
Technical field
The present invention relates to a kind of high break-over voltage flip-chip LED integrated chip; In addition, the invention still further relates to a kind of manufacture method of this high break-over voltage flip-chip LED integrated chip.
Background technology
Flip chip technology (fct) is one of current state-of-the-art microelectronic packaging technology, and it is a kind of chip interconnect technology, is again a kind of desirable die bonding technology, and it has risen to a new height with the circuit packaging density.In all surface mounting technique, flip-chip can reach minimum, the thinnest encapsulation, and along with further dwindling of electronic product volume, the application of flip-chip will be more and more widely.The packing forms that the LED bare chip is tipped upside down on the substrate is called flip LED.Single of traditional flip LED adopts the bigger power-type LED chip of area, and cost is higher, because chip area is bigger, thermal source is concentrated, so radiating effect is bad; Simultaneously, this flip LED is difficult realizes that the multicore sheet is integrated.
The flip-chip LED integrated chip of diode has also appearred protecting with the static electrification on silicon substrate that the diffusion isolation method is made at present; when the integrated level of the bare chip of LED integrated chip series connection is higher; be that the bare chip series connection quantity of LED integrated chip is when more; the rated voltage of whole LED integrated chip is higher; in this moment silicon substrate with interior well region of the joining diffusion layer of LED both positive and negative polarity and silicon substrate and silicon substrate between the parasitic thyristor that forms take place easily that conducting between emitter and the collector electrode is leaked electricity and the phenomenon that produces withstand voltage deficiency; simultaneously also make the silicon substrate that should insulate also have current potential; so after whole integrated chip secondary is encapsulated in the metal-back; metal-back also is easy to generate current potential; be difficult to again further the application of connecting again of the packaged integrated chip of secondary; it is unstable what time to make that below the whole LED integrated chip occurs when high pressure easily; even do not reach rated voltage at all, cause the brightness of chip not reach designing requirement.Especially when entire chip being designed to AC power that the two poles of the earth directly are connected to 220V or 110V when using, when promptly several LED bare chips series connection or connection in series-parallel were connected, leaky was serious especially.Therefore, the high voltage performance of existing LED integrated chip is bad.
Summary of the invention
Technical problem to be solved by this invention is to overcome the deficiencies in the prior art, provide a kind of cost low, be easy to integrated, good heat dissipation effect, high break-over voltage flip-chip LED integrated chip that high voltage performance is good.
In addition, the present invention also provides a kind of manufacture method of this high break-over voltage flip-chip LED integrated chip.
First kind of technical scheme that high break-over voltage flip-chip LED integrated chip of the present invention is adopted is: high break-over voltage flip-chip LED integrated chip of the present invention comprises several LED bare chip and silicon substrates, described LED bare chip comprises substrate and N type epitaxial loayer, P type epitaxial loayer, the front of described silicon substrate deposits heat conductive insulating layer II, deposit metal level on the described heat conductive insulating layer II, the described P type epitaxial loayer of each described LED bare chip correspondence, described N type epitaxial loayer is welded on the described metal level of two separation by solder-ball flip respectively, between several described LED bare chips by the described metal level built-up circuit that is connected.
Further, the positive inwardly diffusion of described silicon substrate has one deck N+ diffusion layer.
Described heat conductive insulating layer II constituted by silicon nitride layer or silicon dioxide layer or silicon nitride layer and silicon dioxide layer.
The back side of described silicon substrate also has the heat dissipating layer that is made of one or more layers metal, the outer surface of described metal level is a reflective surface, described silicon substrate is P type or N type, described soldered ball is gold goal bolt or copper ball bolt or tin ball, described metal level is aluminium or copper or silicon-aluminum, and serial or parallel connection or connection in series-parallel are connected between several described LED bare chips.
First kind of technical scheme that manufacture method adopted of high break-over voltage flip-chip LED integrated chip of the present invention is: may further comprise the steps:
(a) form heat conductive insulating layer II: adopt the low-pressure vapor phase method all to deposit at the front of described silicon substrate deposited silicon nitride or silicon dioxide or the two, the silicon dioxide layer that forms thickness and be the silicon nitride layer of 1000～6000 dusts or silicon dioxide layer that thickness is 1500～8000 dusts or form 400～8000 dusts earlier forms the silicon nitride layer that thickness is 1000～6000 dusts again, or the silicon nitride layer of formation 1000～6000 dusts forms the silicon dioxide layer that thickness is 1500～8000 dusts more earlier, promptly forms described heat conductive insulating layer II;
(b) form metal level: with the method depositing metal layers of sputter or evaporation, on mask aligner, utilize the metal lithographic mask to carry out photoetching then, with wet method or dry method etch technology metal level is carried out etching again, the described metal level that remaining metal level formation serial or parallel connection or connection in series-parallel are connected after the etching;
(c) LED bare chip encapsulation: for each described LED bare chip, plant gold goal bolt or copper ball bolt or tin ball on the described metal level of two separation, again by ultrasonic bonding or Reflow Soldering with several described LED bare chip upside-down mountings on gold goal bolt or copper ball bolt or tin ball.
Further, further comprising the steps of before in step (a):
(a0) form the N+ diffusion layer: in the High temperature diffusion boiler tube to the front doped N-type foreign matter of phosphor of described silicon substrate, perhaps with ion implantation foreign matter of phosphor ion or arsenic ion are injected described silicon substrate and at high temperature drive in, the formation internal resistance is the described N+ diffusion layer of 10～40 Ω/;
Further comprising the steps of between step (b) and step (c):
(b ') forms heat dissipating layer: earlier with the back side of described silicon substrate abrasive method attenuate, again with the method for metal sputtering or evaporation deposition layer of aluminum metal level or the multiple layer metal layer that comprises titanium, nickel, ag material in the back side of described silicon substrate, form described heat dissipating layer.
Second kind of technical scheme that high break-over voltage flip-chip LED integrated chip of the present invention is adopted is: high break-over voltage flip-chip LED integrated chip of the present invention comprises several LED bare chip and silicon substrates, described LED bare chip comprises substrate and N type epitaxial loayer, P type epitaxial loayer, the positive inwardly diffusion of described silicon substrate has one deck N+ diffusion layer, growth has one deck heat conductive insulating layer I on the described N+ diffusion layer, deposit metal level on the described heat conductive insulating layer I, the described P type epitaxial loayer of each described LED bare chip correspondence, described N type epitaxial loayer is welded on the described metal level of two separation by solder-ball flip respectively, between several described LED bare chips by the described metal level built-up circuit that is connected.
Deposit heat conductive insulating layer II between described heat conductive insulating layer I and the described metal level.
Described heat conductive insulating layer II constituted by silicon nitride layer or silicon dioxide layer or silicon nitride layer and silicon dioxide layer.
The back side of described silicon substrate also has the heat dissipating layer that is made of one or more layers metal, the outer surface of described metal level is a reflective surface, described silicon substrate is P type or N type, described soldered ball is gold goal bolt or copper ball bolt or tin ball, described metal level is aluminium or copper or silicon-aluminum, and serial or parallel connection or connection in series-parallel are connected between several described LED bare chips.
Second kind of technical scheme that manufacture method adopted of high break-over voltage flip-chip LED integrated chip of the present invention is: may further comprise the steps:
(a) form the N+ diffusion layer: to the front doped N-type foreign matter of phosphor of described silicon substrate or with ion implantation foreign matter of phosphor ion or arsenic ion are injected described silicon substrate and at high temperature drive in, the formation internal resistance is the described N+ diffusion layer of 10～40 Ω/ in the High temperature diffusion boiler tube;
(b) form heat conductive insulating layer I: in the oxidation boiler tube, adopt wet oxygen method thermal oxide growth to go out the oxide layer that thickness is 400～8000 dusts described silicon substrate, form described heat conductive insulating layer I;
(c) form metal level: with the method depositing metal layers of sputter or evaporation, on mask aligner, utilize the metal lithographic mask to carry out photoetching then, with wet method or dry method etch technology metal level is carried out etching again, the described metal level that remaining metal level formation serial or parallel connection or connection in series-parallel are connected after the etching;
(d) LED bare chip encapsulation: for each described LED bare chip, plant gold goal bolt or copper ball bolt or tin ball on the described metal level of two separation, again by ultrasonic bonding or Reflow Soldering with several described LED bare chip upside-down mountings on gold goal bolt or copper ball bolt or tin ball.
Further, further comprising the steps of between step (b) and step (c):
(b ') forms heat conductive insulating layer II: adopt low-pressure vapor phase method deposited silicon nitride or silicon dioxide or the two on described heat conductive insulating layer I all to deposit, the silicon dioxide layer that forms thickness and be the silicon nitride layer of 1000～6000 dusts or silicon dioxide layer that thickness is 1500～8000 dusts or form 400～8000 dusts earlier forms the silicon nitride layer that thickness is 1000～6000 dusts again, or the silicon nitride layer of formation 1000～6000 dusts forms the silicon dioxide layer that thickness is 1500～8000 dusts more earlier, promptly forms described heat conductive insulating layer II;
Further comprising the steps of between step (c) and step (d):
(c ') earlier with the back side of described silicon substrate abrasive method attenuate, and the multiple layer metal layer that deposits the layer of aluminum metal level or comprise titanium, nickel, ag material with the method for metal sputtering or evaporation forms described heat dissipating layer in the back side of described silicon substrate again.
The invention has the beneficial effects as follows: since between several described LED bare chips of high break-over voltage flip-chip LED integrated chip of the present invention by the described metal level built-up circuit that is connected, can serial or parallel connection between several described LED bare chips or connection in series-parallel be connected, a plurality of described LED bare chip distribution areas are wide, illumination effect is better, and manufacturing cost is lower than adopting the bigger power-type LED chip of single area; In addition, the present invention uses technology such as the photoetching, oxidation, etching of integrated circuit, so the size of described metal level is littler than the metal level size that has the technology that several LED directly are installed in the circuit board now, its area occupied is less, can realize that little chip is integrated, reaching the purpose that reduces cost, thus cost of the present invention low, be easy to integrated;
Owing to generate on the described silicon substrate of high break-over voltage flip-chip LED integrated chip of the present invention heat conductive insulating layer (described heat conductive insulating layer I and described heat conductive insulating layer II) arranged, deposit metal level on the described heat conductive insulating layer, the described P type epitaxial loayer of each described LED bare chip correspondence, described N type epitaxial loayer is welded on the described metal level of two separation by solder-ball flip respectively, between several described LED bare chips by the described metal level built-up circuit that is connected, each described LED bare chip passes to described metal level by two described soldered balls that join with it with heat, and heat is passed to described silicon substrate and described heat dissipating layer by described heat conductive insulating layer, described heat conductive insulating layer is constituted by silicon nitride layer or silicon dioxide layer or silicon nitride layer and silicon dioxide layer, high several 10 times to more than 100 times of the general heat-conducting glue of its thermal conductivity ratio, the thin thickness of described heat conductive insulating layer of while, therefore thermal conductivity is good, the area of described metal level and described heat dissipating layer is bigger, thermal source disperses, good heat dissipation effect, long service life is so high break-over voltage flip-chip LED integrated chip thermal conductivity of the present invention is good, good heat dissipation effect, long service life;
Owing between described silicon substrate of high break-over voltage flip-chip LED integrated chip of the present invention and the described metal level heat conductive insulating layer is arranged, described heat conductive insulating layer is when guaranteeing that thermal conductivity is good, the insulation property of satisfying the demand are provided, through test, when the two poles of the earth after the integrated chip of several series connection is connected again directly are connected to the AC power application of 220V or 110V, the present invention can satisfy the high pressure resistant leakproof that requires, so high break-over voltage flip-chip LED integrated chip high voltage performance of the present invention is good,, the LED integrated chip provides wide prospect for directly being connected to the civil power application;
Because the described metal level of high break-over voltage flip-chip LED integrated chip of the present invention is down the heat conductive insulating layer, the polarity of the described metal level of each described LED bare chip correspondence is not necessarily identical on the described heat conductive insulating layer, therefore each described LED bare chip can produce the multiple circuit connecting mode that serial or parallel connection or connection in series-parallel are connected each other, avoided existing employing each LED bare chip on a metal substrate to be connected in parallel to realize connecting and drawback that connection in series-parallel is connected, so high break-over voltage flip-chip LED integrated chip of the present invention can be realized multiple connected mode;
Because the outer surface of the described metal level of high break-over voltage flip-chip LED integrated chip of the present invention is a reflective surface, the light that the PN junction of described LED bare chip sends in the bottom surface runs into described metal level and can reflect, the light of reflection penetrates from the front again, the light that sends from the bottom surface of the PN junction of described LED bare chip has obtained effective utilization like this, reduced the waste of bottom surface light, improved luminous efficiency, so high break-over voltage flip-chip LED integrated chip luminous efficiency height of the present invention, front go out the luminous intensity height;
In like manner, adopt the high break-over voltage flip-chip LED integrated chip of manufacture method manufacturing of the present invention to have above-mentioned advantage, and this method technology is easy, good product quality.
Description of drawings
Fig. 1 is the section structure schematic diagram of the embodiment of the invention one high break-over voltage flip-chip LED integrated chip;
Fig. 2 is the section structure schematic diagram after step (a) is finished in the manufacture method of the embodiment of the invention one high break-over voltage flip-chip LED integrated chip;
Fig. 3, Fig. 4 are the section structure schematic diagrames of step (b) process in the manufacture method of the embodiment of the invention one high break-over voltage flip-chip LED integrated chip;
Fig. 5 is the section structure schematic diagram after step (b ') is finished in the manufacture method of the embodiment of the invention one high break-over voltage flip-chip LED integrated chip;
Fig. 6 is the section structure schematic diagram of the embodiment of the invention two high break-over voltage flip-chip LED integrated chips;
Fig. 7 is the section structure schematic diagram after step (a) is finished in the manufacture method of the embodiment of the invention two high break-over voltage flip-chip LED integrated chips;
Fig. 8 is the section structure schematic diagram after step (b) is finished in the manufacture method of the embodiment of the invention two high break-over voltage flip-chip LED integrated chips
Fig. 9 is the section structure schematic diagram after step (b ') is finished in the manufacture method of the embodiment of the invention two high break-over voltage flip-chip LED integrated chips
Figure 10, Figure 11 are the section structure schematic diagrames of step (c) process in the manufacture method of the embodiment of the invention two high break-over voltage flip-chip LED integrated chips
Figure 12 is the section structure schematic diagram after step (c ') is finished in the manufacture method of the embodiment of the invention two high break-over voltage flip-chip LED integrated chips.
Embodiment
Embodiment one:
As shown in Figure 1, the high break-over voltage flip-chip LED integrated chip of present embodiment comprises several LED bare chips 1 and silicon substrate 2, and described LED bare chip 1 comprises sapphire (Al
2O
3) substrate 10 and gallium nitride (GaN) N type epitaxial loayer 11, P type epitaxial loayer 12, certainly, described substrate 10 also can be the substrate of carborundum other materials such as (SiC), described silicon substrate 2 is a P type silicon substrate, deposit heat conductive insulating layer II 5 on the described silicon substrate 2, described heat conductive insulating layer II 5 is made of silicon nitride layer, the conductive coefficient of silicon nitride is very high, the general heat-conducting glue of its thermal conductivity ratio is high more than 100 times, the thin thickness of described heat conductive insulating layer II 5 of while, therefore thermal conductivity is good, can play good heat conduction and thermolysis, the good insulating of while silicon nitride, make that the barotolerance of integrated chip of the present invention is good, deposit metal level 6 on the described heat conductive insulating layer II 5, the outer surface of described metal level 6 is a reflective surface, described metal level 6 is an aluminium, can certainly adopt copper or silicon-aluminum, described metal level 6 is an electrode, electric conductor, it is again the fin of LED, or the refractive body of bottom surface light, the back side of described silicon substrate 2 also has by comprising titanium, nickel, the heat dissipating layer 7 that ag material constitutes, certain described heat dissipating layer 7 also can be made of layer of metal aluminium, the described P type epitaxial loayer 12 of each described LED bare chip 1 correspondence, described N type epitaxial loayer 11 is respectively by soldered ball 80,81 flip chip bondings are connected on the described metal level 6 of two separation, described soldered ball 80,81 is the gold goal bolt, can certainly be copper ball bolt or tin ball, be connected by described metal level 6 between several described LED bare chips 1 and form the circuit of full series connection.
Certainly, described silicon substrate 2 also can be N type silicon substrate, described heat conductive insulating layer II 5 also can be made of the silicon dioxide layer of deposition, high several 10 times of the general heat-conducting glue of its thermal conductivity ratio, perhaps constitute, also can be connected between several described LED bare chips 1 and form the circuit that parallel connection or connection in series-parallel are connected by described metal level 6 by silicon nitride layer and silicon dioxide layer.
In addition, the front of described silicon substrate 2 also can inwardly be spread one deck N+ diffusion layer 3.
Each described LED bare chip 1 passes to described metal level 6 by two described soldered balls 80,81 that join with it with heat, and heat is passed to described silicon substrate 2 and described heat dissipating layer 7 by described heat conductive insulating layer II 5, the area of described metal level 6 and described heat dissipating layer 7 is bigger, thermal source disperses, good heat dissipation effect, long service life; Described heat conductive insulating layer II 5 is when guaranteeing that thermal conductivity is good, the insulation property of satisfying the demand are provided, through test, when the two poles of the earth after the integrated chip of several series connection is connected again directly are connected to the AC power application of 220V or 110V, high break-over voltage flip-chip LED integrated chip of the present invention can satisfy the high pressure resistant leakproof that requires, and provides wide prospect for the LED integrated chip directly is connected to the civil power application.
As Fig. 1～shown in Figure 5, the manufacture method of the high break-over voltage flip-chip LED integrated chip of present embodiment may further comprise the steps:
(a) form heat conductive insulating layer II: adopting the low-pressure vapor phase method is the silicon nitride layer of 3500 dusts at the front of described silicon substrate 2 deposit thickness, promptly form described heat conductive insulating layer II 5, the thickness range of described silicon nitride layer can be controlled in 1000～6000 dusts, the thickness of described silicon nitride layer increases with the raising of requirement of withstand voltage, thickness generally is to control according to the described silicon nitride layer of withstand voltage needs 1000 dusts of every 100V, and the last sectional drawing that forms of this step as shown in Figure 2; Certainly, described heat conductive insulating layer II 5 also can form by deposition of silica, the thickness range of silicon dioxide layer can be controlled in 1500～8000 dusts, the thickness of described silicon dioxide layer increases with the raising of requirement of withstand voltage, and thickness generally is to control according to the described silicon dioxide layer of withstand voltage needs 1500 dusts of every 100V; In like manner, described heat conductive insulating layer II 5 also can be by silicon nitride layer and silicon dioxide layer combination structure, its thickness range can be controlled to according to above-mentioned rule, depositing formation thickness again such as the silicon dioxide layer that deposits formation 400～8000 dusts earlier is the silicon nitride layer of 1000～6000 dusts, and the silicon nitride layer that perhaps forms 1000～6000 dusts earlier forms the silicon dioxide layer that thickness is 1500～8000 dusts again;
(b) form metal level: the method deposit thickness with sputter or evaporation is the metal level of 12000 dusts, as shown in Figure 3, described metal layer thickness scope can be controlled in 5000～40000 dusts, on mask aligner, utilize the metal lithographic mask to carry out photoetching then by photoresist 9, with semiconductor technology dry method etch technology commonly used metal level is carried out etching again, certainly, also can adopt wet etching that metal level is carried out etching, LED after the etching after remaining metal level and the upside-down mounting constitutes the be connected described metal level 6 of circuit of serial or parallel connection or connection in series-parallel, as shown in Figure 4;
(b ') forms heat dissipating layer: earlier with the back side of described silicon substrate 2 abrasive method attenuate, the thickness of described silicon substrate 2 is thinned to 200～250 microns by 400～650 microns, to improve heat-sinking capability, again with the method for metal sputtering or evaporation deposition layer of aluminum metal level or the multiple layer metal layer that comprises titanium, nickel, ag material in the back side of described silicon substrate 2, form described heat dissipating layer 7, the last sectional drawing that forms of this step as shown in Figure 5;
(c) LED bare chip encapsulation: for each described LED bare chip 1, planting gold goal is bolted on the described metal level 6 of two separation, again by ultrasonic bonding with several described LED bare chip 1 upside-down mountings on the gold goal bolt, certainly the gold goal bolt also can adopt copper ball bolt or tin ball to replace, when adopting the tin ball, need by Reflow Soldering with several described LED bare chip 1 upside-down mountings on the tin ball, the last sectional drawing that forms of this step is as shown in Figure 1.
If the positive inwardly diffusion of described silicon substrate 2 has one deck N+ diffusion layer 3, then its manufacture method also needs to carry out following steps before in step (a):
(a0) form the N+ diffusion layer: in the High temperature diffusion boiler tube under 900 ℃～1000 ℃ to the front doped N-type foreign matter of phosphor of described silicon substrate 2, the formation internal resistance is the described N+ diffusion layer 3 of 10～40 Ω/, certainly, also can foreign matter of phosphor ion or arsenic ion be injected described silicon substrate 2 with ion implantation, at high temperature drive in described silicon substrate 2 again, the last sectional drawing that forms of this step is referring to Fig. 7.
Embodiment two:
As shown in Figure 6, the high break-over voltage flip-chip LED integrated chip of present embodiment comprises several LED bare chips 1 and silicon substrate 2, and described LED bare chip 1 comprises sapphire (Al
2O
3) substrate 10 and gallium nitride (GaN) N type epitaxial loayer 11, P type epitaxial loayer 12, certainly, described substrate 10 also can be the substrate of carborundum other materials such as (SiC), described silicon substrate 2 is a P type silicon substrate, the positive inwardly diffusion of described silicon substrate 2 has one deck N+ diffusion layer 3, growth has one deck heat conductive insulating layer I 4 on the described N+ diffusion layer 3, generate on the described heat conductive insulating layer I 4 heat conductive insulating layer II 5 arranged, described heat conductive insulating layer I 4 is made of silicon dioxide, described heat conductive insulating layer II 5 is made of silicon nitride, the conductive coefficient of silicon dioxide and silicon nitride is higher, high several 10 times to more than 100 times of the general heat-conducting glue of its thermal conductivity ratio, the thin thickness of described heat conductive insulating layer I 4 of while and described heat conductive insulating layer II 5, therefore thermal conductivity is good, can play good heat conduction and thermolysis, the good insulating of while silicon dioxide and silicon nitride, make that the barotolerance of integrated chip of the present invention is good, deposit metal level 6 on the described heat conductive insulating layer II 5, the outer surface of described metal level 6 is a reflective surface, described metal level 6 is an aluminium, can certainly adopt copper or silicon-aluminum, described metal level 6 is an electrode, electric conductor, it is again the fin of LED, or the refractive body of bottom surface light, the back side of described silicon substrate 2 also has by comprising titanium, nickel, the heat dissipating layer 7 that ag material constitutes, certain described heat dissipating layer 7 also can be made of layer of metal aluminium, the described P type epitaxial loayer 12 of each described LED bare chip 1 correspondence, described N type epitaxial loayer 11 is respectively by soldered ball 80,81 flip chip bondings are connected on the described metal level 6 of two separation, described soldered ball 80,81 is the gold goal bolt, can certainly be copper ball bolt or tin ball, be connected by described metal level 6 between several described LED bare chips 1 and form the circuit of full series connection.
Certainly, described silicon substrate 2 also can be N type silicon substrate, described heat conductive insulating layer II 5 also can or be constituted by silicon nitride layer and silicon dioxide layer by the silicon dioxide layer of deposition, also can be by described metal level 6 circuit that composition parallel connection or connection in series-parallel be connected that is connected between several described LED bare chips 1.
In addition, described heat conductive insulating layer II 5 even can omit, and have only a heat conductive insulating layer, promptly described heat conductive insulating layer I 4.
Each described LED bare chip 1 passes to described metal level 6 by two described soldered balls 80,81 that join with it with heat, and by described heat conductive insulating layer II 5, described heat conductive insulating layer I 4, described N+ diffusion layer 3 heat is passed to described silicon substrate 2 and described heat dissipating layer 7 successively, the area of described metal level 6 and described heat dissipating layer 7 is bigger, thermal source disperses, good heat dissipation effect, long service life; Described heat conductive insulating layer II 5 and described heat conductive insulating layer I 4 are when guaranteeing that thermal conductivity is good, the insulation property of satisfying the demand are provided, through test, when the two poles of the earth after the integrated chip of several series connection is connected again directly are connected to the AC power application of 220V or 110V, high break-over voltage flip-chip LED integrated chip of the present invention can satisfy the high pressure resistant leakproof that requires, and provides wide prospect for the LED integrated chip directly is connected to the civil power application.
As Fig. 6～shown in Figure 12, the manufacture method of the high break-over voltage flip-chip LED integrated chip of present embodiment may further comprise the steps:
(a) form the N+ diffusion layer: in the High temperature diffusion boiler tube under 900 ℃～1000 ℃ to the front doped N-type foreign matter of phosphor of described silicon substrate 2, the formation internal resistance is the described N+ diffusion layer 3 of 10～40 Ω/, certainly, also can foreign matter of phosphor ion or arsenic ion be injected described silicon substrate 2 with ion implantation, at high temperature drive in described silicon substrate 2 again, the last sectional drawing that forms of this step as shown in Figure 7;
(b) form heat conductive insulating layer I: in the oxidation boiler tube, adopt wet oxygen method thermal oxide growth to go out the oxide layer that thickness is 6000 dusts down in the front of described silicon substrate 2 at 900 ℃～1100 ℃, described thickness of oxide layer scope can be controlled in 400～8000 dusts, form described heat conductive insulating layer I 4, described thickness of oxide layer increases with the raising of requirement of withstand voltage, thickness generally is to control according to the described oxide layer of withstand voltage needs 1500 dusts of every 100V, and the last sectional drawing that forms of this step as shown in Figure 8;
(b ') forms heat conductive insulating layer II: adopting the low-pressure vapor phase method is the silicon nitride layer of 1500 dusts at the front of described silicon substrate 2 deposit thickness, promptly form described heat conductive insulating layer II 5, the thickness range of described silicon nitride layer can be controlled in 1000～6000 dusts, the thickness of described silicon nitride layer increases with the raising of requirement of withstand voltage, thickness generally is to control according to the described silicon nitride layer of withstand voltage needs 1000 dusts of every 100V, and the last sectional drawing that forms of this step as shown in Figure 9; Certainly, described heat conductive insulating layer II 5 also can form by deposition of silica, the thickness range of silicon dioxide layer can be controlled in 1500～8000 dusts, the thickness of described silicon dioxide layer increases with the raising of requirement of withstand voltage, and thickness generally is to control according to the described silicon dioxide layer of withstand voltage needs 1500 dusts of every 100V; In like manner, described heat conductive insulating layer II 5 also can be constituted by silicon nitride layer and silicon dioxide layer, its thickness range can be controlled according to above-mentioned rule, form the silicon nitride layer that thickness is 1000～6000 dusts again such as the silicon dioxide layer that forms 400～8000 dusts earlier, the silicon nitride layer that perhaps forms 1000～6000 dusts earlier forms the silicon dioxide layer that thickness is 1500～8000 dusts again;
(c) form metal level: the method deposit thickness with sputter or evaporation is the metal level of 12000 dusts, as shown in figure 10, described metal layer thickness scope can be controlled in 5000～40000 dusts, on mask aligner, utilize the metal lithographic mask to carry out photoetching then by photoresist 9, with semiconductor technology dry method etch technology commonly used metal level is carried out etching again, certainly, also can adopt wet etching that metal level is carried out etching, after the etching remaining metal level constitute with upside-down mounting after LED serial or parallel connection or the be connected described metal level 6 of circuit of connection in series-parallel, as shown in figure 11;
(c ') forms heat dissipating layer: earlier with the back side of described silicon substrate 2 abrasive method attenuate, the thickness of described silicon substrate 2 is thinned to 200～250 microns by 400～650 microns, to improve heat-sinking capability, again with the method for metal sputtering or evaporation deposition layer of aluminum metal level or the multiple layer metal layer that comprises titanium, nickel, ag material in the back side of described silicon substrate 2, form described heat dissipating layer 7, the last sectional drawing that forms of this step as shown in figure 12;
(d) LED bare chip encapsulation: for each described LED bare chip 1, planting gold goal is bolted on the described metal level 6 of two separation, again by ultrasonic bonding with several described LED bare chip 1 upside-down mountings on the gold goal bolt, certainly the gold goal bolt also can adopt copper ball bolt or tin ball to replace, when adopting the tin ball, need by Reflow Soldering with several described LED bare chip 1 upside-down mountings on the tin ball, the last sectional drawing that forms of this step is as shown in Figure 6.
High break-over voltage flip-chip LED integrated chip of the present invention is integrated in several described LED bare chips 1 on the described silicon substrate 2, good heat dissipation effect, long service life, improved luminous efficiency, cost is low, be easy to realize that the multicore sheet is integrated, high voltage performance is good, and the ac commercial power voltage of ability 220V or 110V especially is for the application of LED integrated chip provides wide prospect; In like manner, adopt the high break-over voltage flip-chip LED integrated chip of manufacture method manufacturing of the present invention to have above-mentioned advantage, and this method technology is easy, good product quality.
The present invention can be widely used in LED integrated chip field.
Claims (9)
1. high break-over voltage flip-chip LED integrated chip, comprise several LED bare chips (1) and silicon substrate (2), described LED bare chip (1) comprises substrate (10) and N type epitaxial loayer (11), P type epitaxial loayer (12), it is characterized in that: the front of described silicon substrate (2) deposits heat conductive insulating layer II (5), deposit metal level (6) on the described heat conductive insulating layer II (5), the described P type epitaxial loayer (12) that each described LED bare chip (1) is corresponding, described N type epitaxial loayer (11) is respectively by soldered ball (80,81) flip chip bonding is connected on the described metal level (6) of two separation, between several described LED bare chips (1) by described metal level (6) built-up circuit that is connected, serial or parallel connection or connection in series-parallel are connected between several described LED bare chips (1), and described heat conductive insulating layer II (5) is that the silicon nitride layer of 3500～6000 dusts constitutes or thickness is that the silicon dioxide layer of 1500～8000 dusts constitutes or thickness is that the silicon dioxide layer of 400～8000 dusts and silicon nitride layer that thickness is 1000～6000 dusts constitute or thickness is that the silicon nitride layer of 1000～6000 dusts and silicon dioxide layer that thickness is 1500～8000 dusts constitute by thickness.
2. high break-over voltage flip-chip LED integrated chip according to claim 1 is characterized in that: the positive inwardly diffusion of described silicon substrate (2) has one deck N+ diffusion layer (3).
3. high break-over voltage flip-chip LED integrated chip, comprise several LED bare chips (1) and silicon substrate (2), described LED bare chip (1) comprises substrate (10) and N type epitaxial loayer (11), P type epitaxial loayer (12), it is characterized in that: the positive inwardly diffusion of described silicon substrate (2) has one deck N+ diffusion layer (3), described N+ diffusion layer (3) is gone up growth one deck heat conductive insulating layer I (4), deposit metal level (6) on the described heat conductive insulating layer I (4), the described P type epitaxial loayer (12) that each described LED bare chip (1) is corresponding, described N type epitaxial loayer (11) is respectively by soldered ball (80,81) flip chip bonding is connected on the described metal level (6) of two separation, between several described LED bare chips (1) by described metal level (6) built-up circuit that is connected, serial or parallel connection or connection in series-parallel are connected between several described LED bare chips (1), and described heat conductive insulating layer I (4) is that thickness is the oxide layer of 6000～8000 dusts.
4. high break-over voltage flip-chip LED integrated chip according to claim 3, it is characterized in that: deposit heat conductive insulating layer II (5) between described heat conductive insulating layer I (4) and the described metal level (6), described heat conductive insulating layer II (5) is that the silicon nitride layer of 1000～6000 dusts constitutes or thickness is that the silicon dioxide layer of 1500～8000 dusts constitutes or thickness is that the silicon dioxide layer of 400～8000 dusts and silicon nitride layer that thickness is 1000～6000 dusts constitute or thickness is that the silicon nitride layer of 1000～6000 dusts and silicon dioxide layer that thickness is 1500～8000 dusts constitute by thickness.
5. according to claim 1 or 2 or 3 or 4 described high break-over voltage flip-chip LED integrated chips, it is characterized in that: the back side of described silicon substrate (2) also has the heat dissipating layer (7) that is made of one or more layers metal, the outer surface of described metal level (6) is a reflective surface, described silicon substrate (2) is P type or N type, described soldered ball (80,81) is gold goal bolt or copper ball bolt or tin ball, and described metal level (6) is aluminium or copper or silicon-aluminum.
6. method that is used to make the described high break-over voltage flip-chip LED integrated chip of claim 1 is characterized in that: may further comprise the steps:
(a) form heat conductive insulating layer II: adopt the low-pressure vapor phase method all to deposit at the front deposited silicon nitride of described silicon substrate (2) or silicon dioxide or the two, the silicon dioxide layer that forms thickness and be the silicon nitride layer of 3500～6000 dusts or silicon dioxide layer that thickness is 1500～8000 dusts or form 400～8000 dusts earlier forms the silicon nitride layer that thickness is 1000～6000 dusts again, or the silicon nitride layer of formation 1000～6000 dusts forms the silicon dioxide layer that thickness is 1500～8000 dusts more earlier, promptly forms described heat conductive insulating layer II (5);
(b) form metal level: with the method depositing metal layers of sputter or evaporation, on mask aligner, utilize the metal lithographic mask to carry out photoetching then, with wet method or dry method etch technology metal level is carried out etching again, remaining metal level constitutes described metal level (6) after the etching;
(c) LED bare chip encapsulation: for each described LED bare chip (1), plant gold goal bolt or copper ball bolt or tin ball on the described metal level (6) of two separation, again by ultrasonic bonding or Reflow Soldering with several described LED bare chip (1) upside-down mountings on gold goal bolt or copper ball bolt or tin ball.
7. the manufacture method of high break-over voltage flip-chip LED integrated chip according to claim 6, it is characterized in that: the positive inwardly diffusion of described silicon substrate (2) has one deck N+ diffusion layer (3), the back side of described silicon substrate (2) also has the heat dissipating layer (7) that is made of one or more layers metal
(a) is further comprising the steps of before in step:
(a0) form the N+ diffusion layer: in the High temperature diffusion boiler tube to the front doped N-type foreign matter of phosphor of described silicon substrate (2), perhaps with ion implantation foreign matter of phosphor ion or arsenic ion are injected described silicon substrate (2) and at high temperature drive in, the formation internal resistance is the described N+ diffusion layer (3) of 10～40 Ω/;
Further comprising the steps of between step (b) and step (c):
(b ') forms heat dissipating layer: elder generation is with the back side abrasive method attenuate of described silicon substrate (2), again with the method for metal sputtering or evaporation deposition layer of aluminum metal level or the multiple layer metal layer that comprises titanium, nickel, ag material in the back side of described silicon substrate (2), form described heat dissipating layer (7).
8. method that is used to make the described high break-over voltage flip-chip LED integrated chip of claim 3 is characterized in that: may further comprise the steps:
(a) form the N+ diffusion layer: in the High temperature diffusion boiler tube to the front doped N-type foreign matter of phosphor of described silicon substrate (2), perhaps with ion implantation foreign matter of phosphor ion or arsenic ion are injected described silicon substrate (2) and at high temperature drive in, the formation internal resistance is the described N+ diffusion layer (3) of 10～40 Ω/;
(b) form heat conductive insulating layer I: in the oxidation boiler tube, adopt wet oxygen method thermal oxide growth to go out the oxide layer that thickness is 400～8000 dusts described silicon substrate (2), form described heat conductive insulating layer I (4);
(c) form metal level: with the method depositing metal layers of sputter or evaporation, on mask aligner, utilize the metal lithographic mask to carry out photoetching then, with wet method or dry method etch technology metal level is carried out etching again, remaining metal level constitutes described metal level (6) after the etching;
(d) LED bare chip encapsulation: for each described LED bare chip (1), plant gold goal bolt or copper ball bolt or tin ball on the described metal level (6) of two separation, again by ultrasonic bonding or Reflow Soldering with several described LED bare chip (1) upside-down mountings on gold goal bolt or copper ball bolt or tin ball.
9. the manufacture method of high break-over voltage flip-chip LED integrated chip according to claim 8, it is characterized in that: deposit heat conductive insulating layer II (5) between described heat conductive insulating layer I (4) and the described metal level (6), the back side of described silicon substrate (2) also has the heat dissipating layer (7) that is made of one or more layers metal
Further comprising the steps of between step (b) and step (c):
(b ') forms heat conductive insulating layer II: adopt the low-pressure vapor phase method to go up deposited silicon nitride or silicon dioxide or the two at described heat conductive insulating layer I (4) and all deposit, the silicon dioxide layer that forms thickness and be the silicon nitride layer of 1000～6000 dusts or silicon dioxide layer that thickness is 1500～8000 dusts or form 400～8000 dusts earlier forms the silicon nitride layer that thickness is 1000～6000 dusts again, or the silicon nitride layer of formation 1000～6000 dusts forms the silicon dioxide layer that thickness is 1500～8000 dusts more earlier, promptly forms described heat conductive insulating layer II (5);
Further comprising the steps of between step (c) and step (d):
(c ') elder generation is with the back side abrasive method attenuate of described silicon substrate (2), again with the method for metal sputtering or evaporation deposition layer of aluminum metal level or the multiple layer metal layer that comprises titanium, nickel, ag material in the back side of described silicon substrate (2), form described heat dissipating layer (7).
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| CN101982883A (en) * | 2010-09-01 | 2011-03-02 | 晶科电子（广州）有限公司 | Luminescent device formed by inverted luminous cell array and manufacture method thereof |
| CN102403413B (en) * | 2010-09-19 | 2013-09-18 | 常州普美电子科技有限公司 | LED (Light-Emitting Diode) heat dissipation base plate, LED packaging structure, and manufacturing method of LED heat dissipation base plate and LED packaging structure |
| CN102446948B (en) * | 2010-10-12 | 2014-07-30 | 晶元光电股份有限公司 | Light emitting element |
| CN102386178B (en) * | 2011-12-08 | 2015-12-02 | 晶科电子（广州）有限公司 | A kind of LED of high drive and manufacture method thereof |
| CN104576626A (en) * | 2013-10-22 | 2015-04-29 | 泰谷光电科技股份有限公司 | Flip chip type light emitting diode element packaging structure |
| CN103560196B (en) * | 2013-10-31 | 2016-04-13 | 上海大学 | Flip LED chips encapsulating structure |
| CN103824848B (en) * | 2014-01-16 | 2017-03-15 | 大连德豪光电科技有限公司 | LED display and preparation method thereof |
| CN108615795B (en) * | 2018-03-27 | 2020-09-08 | 北京大学 | Method for realizing interconnection in micron LED chip |
| CN108493306B (en) * | 2018-03-27 | 2020-09-08 | 北京大学 | Preparation method of high-voltage high-power GaN-based LED array chip |
| US11349052B2 (en) * | 2019-02-05 | 2022-05-31 | Facebook Technologies, Llc | Bonding interface for hybrid TFT-based micro display projector |
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| CN1189244A (en) * | 1995-06-30 | 1998-07-29 | 西门子微电子公司 | Method of manufacturing monolithic linear optocoupler |
| CN1877833A (en) * | 2006-05-19 | 2006-12-13 | 广州南科集成电子有限公司 | U-grooved integrated chip and method for fabricating same |
| CN1967883A (en) * | 2005-11-17 | 2007-05-23 | 上海蓝光科技有限公司 | High power LED flip-chip and its manufacturing method |
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| CN1189244A (en) * | 1995-06-30 | 1998-07-29 | 西门子微电子公司 | Method of manufacturing monolithic linear optocoupler |
| CN1967883A (en) * | 2005-11-17 | 2007-05-23 | 上海蓝光科技有限公司 | High power LED flip-chip and its manufacturing method |
| CN1877833A (en) * | 2006-05-19 | 2006-12-13 | 广州南科集成电子有限公司 | U-grooved integrated chip and method for fabricating same |
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