CN101962759B - PECVD system with internal heater - Google Patents
PECVD system with internal heater Download PDFInfo
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- CN101962759B CN101962759B CN2009101582047A CN200910158204A CN101962759B CN 101962759 B CN101962759 B CN 101962759B CN 2009101582047 A CN2009101582047 A CN 2009101582047A CN 200910158204 A CN200910158204 A CN 200910158204A CN 101962759 B CN101962759 B CN 101962759B
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Abstract
The invention discloses a PECVD system with an internal heater, comprising a vacuum chamber and movable plasma boxes arranged in the vacuum chamber. The four peripheral walls of the vacuum chamber are provided with heating panels, and at least two movable plasma boxes exist. Each of the movable plasma boxes is arranged in the vacuum chamber in parallel, and the internal heater for heating the vacuum chamber uniformly is arranged between the movable plasma boxes. The internal heater can greatly enhance the output of the single-chamber deposition system, and avoid the problem of unbalanced temperature distribution caused by the traditional heating ways. The PECVD system of the invention effectively solves the non-uniform thickness of silicon-based thin film deposited on the glass substrate with TCO, enhances the performance of the large-area silicon-based thin film solar cell, lays the foundation of the development of the large-area PECVD thin film deposition system, and effectively promotes the industrialization of the silicon-based thin film cell technology.
Description
Technical field
The present invention relates to the vacuum coater of a kind of big area, high speed deposition silica-base film, particularly a kind of PECVD system that has internal heater.
Background technology
Around improving the research work of photoelectric transformation efficiency, actively carry out in each developed country and some developing countries with the various novel solar batteries of two general objectives that reduce production costs always.The solar cell filmization is the main developing direction that reduces cost, so thin-film solar cells (non-crystalline silicon, amorphous silicon/microcrystalline silicon tandem battery etc.) becomes a big focus of global novel solar battery research and development.How hull cell is with the breakthrough of new technology and industrialization combination on a large scale in addition, and production unit is a restriction hull cell development key.Modern thin film preparation process, the PECVD technology of especially constantly bringing forth new ideas proposes very high requirement to the performance of equipment.Therefore, advanced person's vacuum film deposition equipment has constituted the important step of whole thin film material and device technology.
General a whole set of silicon thin-film battery production line comprises: ultrasonic cleaning device, plasma reinforced chemical vapor deposition system (being called for short the PECVD system), magnetron sputtering aluminize equipment, laser scribing machine, battery test system, baking system and other utility appliance.Wherein the PECVD system is the nucleus equipment of silicon thin-film battery production line, is restricting the performance of whole production line, and the PECVD system is a plasma reinforced chemical vapor deposition system; The principle of PECVD technology is to utilize low-temperature plasma to make energy source; Sample places on the electrode of radio frequency discharge under the low pressure, and the process gas of feeding forms plasma body after radio frequency discharge; Contain a large amount of high-energy electrons in the plasma body, they can provide chemical vapor deposition processes required intensity of activation.The collision of electronics and gas molecule in space can promote the process gas molecule decomposition, chemical combination, excite and ionization process, generate active very high various chemical groups, these chemical groups form solid film again through series reaction at sample surfaces.
Silicon-based thin film solar cell is to utilize the PECVD method to go up the silica-base film photoelectric conversion layer that deposits p-i-n, p-i-n/p-i-n or p-i-n/p-i-n/p-i-n structure at the glass substrate with nesa coating (TCO) (glass substrate), makes back electrode then and forms.In thin-film solar cells whole production manufacturing processed, the silica-base film deposition is most important, and silica-base material wherein can be aluminosilicate alloy materials such as non-crystalline silicon, nano-silicon, microcrystal silicon, polysilicon and amorphous germanium silicon etc.In the hull cell in the photoelectric conversion layer thickness of every tunic have only tens～hundreds of nanometer; The sedimentary quality of film will be directly connected to the electrical property and the visual appearance of solar cell; Its deposition process is except that having the relation with factors such as processing parameter such as temperature, pressure, flow, power, working gas proportionings, and is also relevant with the structure of PECVD system.
The PECVD system of traditional silicon-based thin film solar cell manufacturing has adopted the sedimentary capacitance coupling type PECVD of monolithic system, has had embedded (inline) PECVD system of a plurality of linear coating chambers that intercouple, the multicell bunch type PECVD system (cluster) of perhaps a plurality of reaction chambers around the transferring chamber.In the sedimentary capacitance coupling type PECVD of the monolithic system, exciting electrode and ground-electrode have only a pair of, and the substrate that is used to plated film generally is positioned on the ground-electrode; There is a well heater at the back side of ground-electrode; To substrate one preset temperature is provided, is carved with the hole of suitable density on the exciting electrode, process gas gets into region of discharge through these holes; So can not place substrate on the exciting electrode, the yield-power of this PECVD system receives serious limit.In having the embedded system of big slightly throughput; The substrate that forms silicon film must constantly move to another reaction chamber from a reaction chamber and carry out next process; This means if a reaction chamber breaks down; Total system must quit work so, and this interdependent property has seriously restricted its stability and throughput.For a bunch type PECVD equipment, substrate is through the transporting room shift-in or the coating chamber around shifting out, and is connected by dodge gate between each coating chamber and the transporting room simultaneously; Make single coating chamber be in sealed state, one of them coating chamber breaks down, and can not have influence on other coating chamber; Overcome the shortcoming of above-mentioned embedded system; But bunch type PECVD equipment by several coating chambers are formed is extremely complicated and expensive, owing to quick operation reliably requires high, limited owing to the space in addition to its mechanical tolerance range; Have only a small amount of coating chamber to be connected with transporting room, this means to increase turnout through increasing coating chamber.Therefore above-mentioned PECVD system is not suitable for the production of the low-cost high yield of large substrate plated film, particularly silicon-based thin film solar cell.
The PECVD system that is used for the suitability for industrialized production silicon-based thin film solar cell the earliest is the PECVD system of the internal-connection amorphous silicon solar cell of U.S. Chronar company design; See Fig. 1, there are 6 Vakuumkammer 1-1 in whole PECVD system, the external well heater 1-2 of Vakuumkammer; Each Vakuumkammer is adorned 1 movable plasma case 1-3; Movable plasma case adopts single exciting electrode 1-4, and each movable plasma case is adorned 4 plate base 1-5, i.e. one batch of deposition of production line, 24 plate bases.The area of substrate is 305 * 915mm (12 " * 36 ").Its weak point is: adopt six Vakuumkammers, Vakuumkammer is many, and whole vacuum system is complicated; 6 movable plasma cases of separation, thus cargo handling process time-consuming often, loaded down with trivial details, efficient is low; Every batch of substrate of being adorned is few, has only 24, and the area of substrate little (305 * 915mm), so yield poorly.
To the problems referred to above, last century the eighties, U.S. APS and EPV company improve on the Equipment Foundations of six Vakuumkammers of U.S. Chrona company, single exciting electrode; Adopt single Vakuumkammer 2-1, Vakuumkammer 2-1 adorns a movable plasma case 2-2, built-in 12 the exciting electrode 2-3 of each movable plasma case; Can adorn 12 * 4=48 plate base 2-4; Be one batch of deposition of production line, 48 plate bases, the area of substrate is 635 * 1245mm, 760 * 1250mm, sees Fig. 2.This system compares with respect to the system of Chrona company, has simplified equipment, has optimized vacuum system; The also corresponding increase of output; And reduced production cost, be more suitable for of the production of big area high speed, but still have following problems based on the solar cell of silica-base film:
On the one hand; Because such packaged type plasma case volume is very big; And the type of heating that all PECVD systems adopt is an external heating mode, and promptly heating tube is near the outside of Vakuumkammer wall, thus near around the temperature of wall high; Movable plasma case intermediary temperature is relatively low, and in the vacuum environment of the PECVD of thin film deposition system, can not solve the problems referred to above through gas blower with traditional method.Therefore the distribution of temperature is difficult to reach the ideal uniform degree in the large-scale movable plasma case; Because temperature non causes between the substrate and the thickness offset of same substrate different positions institute deposited film is fairly obvious; This physics and electrical parameter influence to the silicon film material is very big, further influences the electrical property and the visual appearance of solar cell.
On the other hand, the many employings of movable plasma case is 12 exciting electrode parallel connections.The size of electrode for example will prepare the silicon-film solar-cell of 635 * 1245mm a little more than the size of substrate in the movable plasma case, and the size of electrode is generally greater than 650 * 1270mm.Movable plasma case mainly uses stainless material; The weight of so movable plasma case can reach more than the 500Kg; Because self is overweight; For non-automatic continuous production, the moving operation of armrest, this makes movable plasma case in shift-in, workman's inconvenient operation and have potential safety hazard when shifting out.
In view of the problem that above-mentioned PECVD system exists, we add several internal heaters in single Vakuumkammer; Thickness is 10～30mm, single Vakuumkammer inner chamber is become 1 be 2 or 3, but still be same integrated vacuum chamber; A Vakuumkammer inner chamber is adorned a movable plasma case, so whole Vakuumkammer can be adorned 2 or 3 movable plasma cases, and 1 movable plasma case can be adorned 5～10 electrodes; Be that per 1 movable plasma case can be adorned 20～40 substrates, as adorning two plasma cases, whole Vakuumkammer once can be adorned 40～80 substrates so; As adorn 3 plasma cases, whole Vakuumkammer once can be adorned 60～120 substrates.The special new PE CVD system that designs for the reliable high quality of production of low-cost silicon-based thin film solar cell has realized big area, high yield, high quality, has reduced production cost.
Summary of the invention
In order to overcome defective of the prior art, the object of the present invention is to provide a kind of compact construction, easy to operate, working stability, efficient, the PECVD system that has internal heater that can be used for the making of production bulk silicon based thin film solar cell that quality is high.
For this reason; The invention provides a kind of PECVD system that has internal heater; Comprise the Vakuumkammer that has inlet, outlet and place the movable plasma case that is used for plated film in the Vakuumkammer; The periphery wall of said Vakuumkammer is provided with and is used for the hot-plate that heats to Vakuumkammer integral body; It is characterized in that: the movable plasma case in this system is at least two, and each movable plasma case is parallel in the Vakuumkammer, is provided with the internal heater that is used to make thermally equivalent in the Vakuumkammer between each movable plasma case.
Wherein, said Vakuumkammer inner bottom part is provided with track, and pulley is equipped with in said movable plasma case bottom, and movable plasma case is carried by pulley and moves along track.
Wherein, said internal heater comprises two radial lamellas and is clipped in the heating tube between the radial lamella, and said two radial lamellas are affixed with the upper/lower terminal of Vakuumkammer inwall respectively through support component, and the end of said heating tube is passed flange and fixed.
Wherein, said support component is made up of draw-in groove and pillar, and said two radial lamellas are connected in the draw-in groove, and the upper/lower terminal of pillar and Vakuumkammer inwall is affixed; The periphery of said flange is socketed with sealing-ring along the place.
Wherein, the spacing of said internal heater and movable plasma case is 5-12cm.
Wherein, Exciting electrode and the ground-electrode alternately placed are installed in the said movable plasma case; Outermost two ground-electrodes respectively carry a substrate as the inboard of side plate, two side plates; Remaining electrode except side plate all respectively carries two substrates, forms region of discharge between each adjacent electrode, and each exciting electrode is all independently by a power supply and the energy supply of power match device; The top of said exciting electrode and ground-electrode is provided with a common shower plate, the bottom is provided with a common stainless steel plate; Shower plate and stainless steel plate are provided with the hole, and the top of said shower plate is provided with a cover plate, and cover plate is provided with the air intake that is connected with Vakuumkammer upper end inlet mouth; All be equipped with polyester insulated between said exciting electrode and shower plate and the stainless steel plate to realize the insulation between exciting electrode and the movable plasma case, pulley is equipped with in the bottom of said movable plasma case.
Wherein, the number of said exciting electrode is N, and the number of said ground-electrode is N+1, and wherein N is integer and 5≤N≤10.
Wherein, said power supply adopts external radio-frequency power supply, and power supply is connected through shielding cable with the edge of exciting electrode.
Wherein, the aperture Φ in said hole is 1～4mm, and pitch-row d is 10～30mm.
Wherein, said substrate area is (381～1243) * (915～1778) mm, and promptly substrate width is that 381～1243mm, length are 915～1778mm.
Beneficial effect of the present invention is:
1, PECVD system architecture compact of the present invention, load, unload sheet, advance stove, the easy handling of coming out of the stove, more improved the quality of output and product;
2, the present invention adopts independently movable plasma case, avoids influence each other;
3, the present invention adopts 1 Vakuumkammer; Vakuumkammer can be installed a plurality of movable plasma cases as required, is respectively equipped with an internal heater between each adjacent plasma case, and PECVD of the present invention system is through having improved the quantity of the product of single chamber primary depositing to structural improvement; Improved the output of single chamber deposition system greatly; And the homogeneity of temperature distribution in the assurance total system, make the big area product in the Vakuumkammer obtain the height uniform heating, thereby improved the performance of total system.
4, the present invention adopts an internal heater between per two movable plasma cases; Help keeping the temperature of movable plasma case both inner pad; Make the temperature of glass substrate more constant evenly, thereby reach the homogeneity of large-area coating film, more improved the stability of total system;
Description of drawings
Fig. 1 is the Six-pack system schematic of Chronar company in the prior art, wherein, and the 1-1-Vakuumkammer; The 1-2-well heater; The movable plasma case of 1-3-; The 1-4-exciting electrode; The 1-5-substrate;
Fig. 2 is the synoptic diagram of PECVD system of primary depositing 48 plate bases of EPV company in the prior art, wherein, and the 2-1-Vakuumkammer; The movable plasma case of 2-2-; The 2-3-exciting electrode; The 2-4-substrate;
Fig. 3 a is the schematic internal view (promptly adopting two movable plasma cases, each movable plasma case to adorn the schematic internal view of the PECVD system of 6 exciting electrodes) of PEVCD system embodiment 1 according to the invention;
Fig. 3 b is the schematic internal view (promptly adopting two movable plasma cases, each movable plasma case to adorn the schematic internal view of the PECVD system of 8 exciting electrodes) of PEVCD system embodiment 2 according to the invention;
Fig. 3 c is the schematic internal view (promptly adopting three movable plasma cases, each movable plasma case to adorn the schematic internal view of the PECVD system of 6 exciting electrodes) of PEVCD system embodiment 3 according to the invention;
Fig. 4 is the decomposing schematic representation of internal heater in the PECVD according to the invention system;
Wherein: the 1-Vakuumkammer; The movable plasma case of 2-; The 3-internal heater; The 4-exciting electrode; The 5-hot-plate; The 6-inlet system; The 7-air outlet; The 8-power supply; The 9-radial lamella; The 10-heating tube; The 11-support component; The 11a-draw-in groove, 11b-pillar, 12-flange; The 13-ground-electrode; The 14-substrate; The 15-cable; The 16-shower plate; The 17-cover plate; The 18-hole; The 19-stainless steel plate; The 20-inlet mouth; The 21-corrugated tube; The 22-air intake; The 23-collets; The 24-pulley; The 25-region of discharge; The 26-track, the 27-air-bleed system.
Embodiment
Below in conjunction with accompanying drawing the PECVD system that has internal heater of the present invention is done further to set forth.
Embodiment 1
PECVD of the present invention system adopts computer control; Shown in Fig. 3 a, this PECVD system adopts single Vakuumkammer, and said Vakuumkammer 1 is a rectangle stainless steel casing body; Its upper end is provided with inlet mouth 20, the lower end is provided with air outlet 7; With hot-plate 5, be good to adopt the known electric heating panel of prior art on the periphery wall of Vakuumkammer, said hot-plate 5 closely contacts with the periphery wall of Vakuumkammer through machine riveting mechanism (for example rivet or screw); Obtaining net heat transmission, and then the movable plasma case in the Vakuumkammer 2 is carried out even heating to the Vakuumkammer wall.Said inlet mouth 20 is used for being communicated with so that to plasma case input service gas with inlet system 6; Said air outlet 7 is used for being communicated with so that the working gas behind the Vakuumkammer internal reaction is taken away with air-bleed system 27, and said inlet system 6 all adopts prior art known in those skilled in the art with air-bleed system 27.
Parallelly in the Vakuumkammer be placed with two movable plasma cases 2; The bottom of each movable plasma case 2 is provided with six pulleys 24; In the Vakuumkammer bottom several tracks that is arranged in parallel 26 are housed, movable plasma case is just carried along track 26 by pulley 24 and advances in the Vakuumkammer.Be mounted alternately with six exciting electrodes 4 and seven ground-electrodes 13 in each movable plasma case; Wherein outermost two ground-electrodes are as side plate, substrate of its inboard carrying of plasma case; Remaining electrode except side plate all respectively carries two substrates 14, so the electrode in each plasma case in should example can carry 24 plate bases, total system can be adorned 48 plate bases; The major part of electrode is covered by substrate, substrate area 635 * 1245mm that this is routine.Each exciting electrode is all independently by radio-frequency power supply 8 energy supplies; On the firm edge that is connected exciting electrode of shielding cable 15; The other end links to each other with the supporting radio-frequency power supply that has the power match device in outside; This independent electric power-feeding structure makes has fault-tolerance between the exciting electrode: promptly circuit goes wrong, and (for example short circuit or open circuit) when influencing radio frequency discharge, other circuit still can work in the movable plasma case.Form region of discharge 25 between each adjacent electrode; A public shower plate 16 that has hole 18 is equipped with at the top of electrode; A cover plate 17 is equipped with at the top of shower plate 16, and shower plate 16 and cover plate 17 are formed semi-enclosed containers and be connected through corrugated tube 21 with inlet mouth 20 on the Vakuumkammer through the air intake 22 that is provided with on the cover plate 17, the bottom of electrode be the bottom of plasma case be equipped with one have a hole 18 public stainless steel plate 19; Mixed gas through inlet system charges into is introduced in the movable plasma case through corrugated tube 21; Many holes 18 flow down from the shower plate, flow along region of discharge 25, and reacted gas is through the many holes 18 on the stainless steel plate 19; Flow in the space of movable plasma case and Vakuumkammer inwall, and discharge Vakuumkammer by air-bleed system 27 through air outlet 7.All be equipped with polyester insulated 23 between exciting electrode and shower plate 16 and the stainless steel plate 19 to realize the insulation between exciting electrode and the movable plasma case 2.
Key of the present invention is to have used one to be positioned over any two movable plasma case intermediary internal heaters 3 in the Vakuumkammer, and itself and Vakuumkammer indirect heating plate 5 are realized the even heating in the Vakuumkammer jointly.One internal heater 3 is installed in the middle of two movable plasma cases 2 in this example, and it is of a size of 1500 * 950 * 20mm, 3000 watts of heating powers, and said plasma case 2 is all placed perpendicular to the Vakuumkammer bottom with internal heater 3.
As shown in Figure 4; Said internal heater 3 mainly is made up of two radial lamellas 9, U type heating tube 10 and support component 11 between radial lamella; Said support component 11 is made up of draw-in groove 11a and pillar 11b, and two radial lamellas are connected in the draw-in groove, and the inside upper and lower end of pillar and Vakuumkammer is affixed.U type heating tube 10 reaches fixing through circular steel flange; The periphery of flange is arranged with sealing-ring 12 along the place; Structure through flange and sealing-ring has realized being connected of U type heating tube and Vakuumkammer externally fed device (220V); The power of U type heating tube 10 is 3000W, through thermal radiation the both sides heating member is carried out even heating, and makes the big area sample in the Vakuumkammer obtain the height uniform heating.The distance of internal heater and movable plasma case is moderate, can not be too far or too near, too far will influence the utilization ratio of Vakuumkammer and the thermal utilization rule of heating unit, and distance generally in 5～12cm scope, is preferably 8cm or 9cm.This type of heating makes in the single chamber does not influence the homogeneity and the quality of forming film of whole Vakuumkammer temperature distribution through increasing movable plasma case number and then increasing under the situation of substrate quantity.The use of internal heater has realized high yield, has hanged down the production of equipment cost, and the ununiformity that has reduced temperature distribution has improved the quality of silica-base film device again.
Down in the face of the operating process explanation of PECVD of the present invention system as follows:
The first step, the glass substrate that is coated with tin dioxide film after the laser quarterization is after the ultrasonic cleaning drying; Pack in the movable plasma case; Push the preheating oven preheating by transporting car, be used to deposit the preceding preheating glass substrate of PIN film, the preheating oven storing temperature is adjustable; The PID temperature control is regulated, and preheating temperature is traditionally arranged to be 160～260 ℃.
In second step, with two that are preheating to assigned temperature movable plasma cases 2, before transporting the stainless-steel vacuum chamber 1 that car is sent to the PECVD system, movable plasma case is just carried along track 26 by pulley 24 and advances Vakuumkammers.Exciting electrode 4 and shielding cable 15 are connected, the air intake on the movable plasma case 22 is linked to each other through the quick plug of soft corrugated tube 21 and the inlet mouth 20 of Vakuumkammer upper end, close the sealed door of Vakuumkammer, tighten the sealing handwheel.Utilize air-bleed system 27 to bleed; Reach certain vacuum tightness up to all pipelines and Vakuumkammer; Simultaneously; Vakuumkammer indirect heating plate 5 is worked with internal heater 3 simultaneously, and each zone of Vakuumkammer comprises that movable plasma case will be raised to predetermined Heating temperature in very short time, is generally 150～250 ℃.
The 3rd one, in plasma case, pass through depositing treatment to form P, I and the N photonic layer of solar cell.At first utilize inlet system 6 that mixed gas is fed in the plasma case, mixed gas decomposes at region of discharge 25.Before the deposition PIN layer, at first feed argon gas and discharge, the purpose of argon gas discharging mainly contains two; The one, Vakuumkammer is cleaned; Particularly to glass substrate, the 2nd, make its surface form active coating to the plasma bombardment of glass substrate, help above silica-base film is deposited on.Feed the process gas of preparation P layer, I layer, N layer then successively, on glass substrate, deposit P, I, N layer successively, after every layer of deposition, all Vakuumkammer is repeatedly cleaned, so as to preventing the crossed contamination of residual doping agent with Ar gas.
The 4th step; After accomplishing a P, I, N photonic layer,, can carry out the deposition of PIN layer once or twice again if needs are arranged; Form binode or three joint laminated silicon-base film solar cells respectively; This moment, the intrinsic layer of second or the 3rd knot can be made a-Si, a-SiGe, μ c-Si, poly-Si, nc-Si etc., enlarged the spectral absorption scope of silicon-based thin film solar cell, improved battery conversion efficiency and stability.The second or the 3rd used process gas of knot and processing parameter change as required, repeat the operation of the 3rd step during deposition.
The 5th the step, plated film after, repeatedly wash charging into Ar gas in the Vakuumkammer with inlet system once more, and then pour nitrogen N
2To a normal atmosphere, the hermatic door of open vacuum chamber, two movable plasma cases will placing in orbit with waggon take out from Vakuumkammer, naturally cool to room temperature, get into next process.Get into Vakuumkammer with the good next batch substrate of stylish preheating and repeat above operating process.
Embodiment 2
The structure of this routine described PECVD system and operating process have different being only basically with embodiment 1:
Shown in Fig. 3 b, this routine described PECVD system adopts single Vakuumkammer, two movable plasma cases of parallel placement in the Vakuumkammer; Each movable plasma case has 8 exciting electrodes, can carry 32 plate bases, and total system can be adorned 64 plate bases; Substrate area 381 * 1270mm; There is an internal heater centre of two movable plasma cases, and heating unit is of a size of 1500 * 760 * 20mm, 3000 watts of heating powers.
Embodiment 3
The structure of this routine described PECVD system and operating process have different being only basically with embodiment 1:
Shown in Fig. 3 c, this routine described PECVD system adopts single Vakuumkammer, three movable plasma cases of parallel placement in the Vakuumkammer; Each movable plasma case is adorned 6 exciting electrodes, can carry 24 plate bases, and total system can be adorned 72 plate bases; Substrate area 635 * 1245mm, there is an internal heater centre of any two movable plasma cases, totally two well heaters in the total system; Well heater is of a size of 1500 * 950 * 20mm, 3000 watts of the heating powers of each heating unit.
The PECVD system that relates to a single chamber, a plurality of movable plasma case and utilize internal heater of the present invention, the quality of the silica-base film photovoltaic cell of can improving single chamber output, reduce production costs, ease of Use, raising being made.
There is very big difference in PECVD of the present invention system with prior art.According to design of the present invention, make that the PECVD system operation is more simple, the Vakuumkammer temperature distribution evenness improves greatly, thereby makes the big area rate of film build more even, is a kind of large-scale cheaply silicon-based thin film solar cell production unit.The producing apparatus of this high productivity and low maintenance rate can continue, reliably, simply make low-cost, high performance silicon-based film solar cells.This quality and production efficiency for extensive raising silica-base film photoelectric device (particularly non-crystal silicon solar cell) is significant.
Should be pointed out that for the present invention also to have the embodiment of multiple conversion and remodeling, be not limited to the specific embodiment of above-mentioned embodiment.The foregoing description is as just explanation of the present invention, rather than for restriction of the present invention.In a word, protection scope of the present invention should comprise those conspicuous to those skilled in the art conversion or substitute and remodeling.
Claims (10)
1. plasma reinforced chemical vapor deposition system that has internal heater; This system comprises the Vakuumkammer (1) that has inlet, outlet (20,7) and places movable plasma case (2) in the Vakuumkammer; The periphery wall of said Vakuumkammer is provided with hot-plate (5); It is characterized in that: the movable plasma case (2) in this system is at least two; Each movable plasma case (2) is parallel in the Vakuumkammer, is provided with the internal heater (3) that is used to make thermally equivalent in the Vakuumkammer between each movable plasma case.
2. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 1; It is characterized in that: said Vakuumkammer (1) inner bottom part is provided with track (26); Pulley (24) is equipped with in said movable plasma case (2) bottom, and movable plasma case is carried by pulley and moves along track.
3. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 1; It is characterized in that: said internal heater (3) comprises two radial lamellas (9) and is clipped in the heating tube (10) between the radial lamella; Said two radial lamellas are affixed with the upper/lower terminal of Vakuumkammer (1) inwall respectively through support component (11), and the end of said heating tube (10) is passed flange (12) and fixed.
4. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 3; It is characterized in that: said support component (11) is made up of draw-in groove (11a) and pillar (11b); Said two radial lamellas are connected in the draw-in groove, and the upper/lower terminal of pillar and Vakuumkammer (1) inwall is affixed; The periphery of said flange is socketed with sealing-ring along the place.
5. like claim 1 or the 3 described plasma reinforced chemical vapor deposition systems that have internal heater, it is characterized in that: said internal heater (3) is 5-12cm with the spacing of movable plasma case (2).
6. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 1; It is characterized in that: exciting electrode (4) and the ground-electrode (13) alternately placed are installed in the said movable plasma case (2); Outermost two ground-electrodes respectively carry a substrate (14) as the inboard of side plate, two side plates; Remaining electrode except side plate all respectively carries two substrates (14); Form region of discharge (25) between each adjacent electrode; Each exciting electrode is all independently by a power supply (8) and the energy supply of power match device, and the top of said exciting electrode (4) and ground-electrode (13) is provided with a common shower plate (16), the bottom is provided with a common stainless steel plate (19), and shower plate and stainless steel plate are provided with hole (18); The top of said shower plate is provided with a cover plate (17); Cover plate is provided with the air intake (22) that is connected with Vakuumkammer upper end inlet mouth (20), polyester insulated (23) all is installed to realize the insulation between exciting electrode and the movable plasma case (2) between said exciting electrode (4) and shower plate (16) and the stainless steel plate (19), and pulley (24) is equipped with in the bottom of said movable plasma case.
7. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 6 is characterized in that: the number of said exciting electrode (4) is N, and the number of said ground-electrode is N+1, and wherein N is integer and 5≤N≤10.
8. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 6 is characterized in that: said power supply (8) adopts external radio-frequency power supply (8), and power supply is connected through shielding cable (15) with the edge of exciting electrode (4).
9. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 6 is characterized in that: the aperture Φ of said hole (18) is 1～4mm, and pitch-row d is 10～30mm.
10. the plasma reinforced chemical vapor deposition system that has internal heater as claimed in claim 6 is characterized in that: said substrate (14) area is (381～1243) * (915～1778) mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101582047A CN101962759B (en) | 2009-07-21 | 2009-07-21 | PECVD system with internal heater |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009101582047A CN101962759B (en) | 2009-07-21 | 2009-07-21 | PECVD system with internal heater |
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| Publication Number | Publication Date |
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| CN101962759A CN101962759A (en) | 2011-02-02 |
| CN101962759B true CN101962759B (en) | 2012-07-25 |
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| CN2009101582047A Expired - Fee Related CN101962759B (en) | 2009-07-21 | 2009-07-21 | PECVD system with internal heater |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102953046B (en) * | 2011-08-26 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | CVD (chemical vapor deposition) reaction cavity and CVD equipment |
| CN102953051A (en) * | 2011-08-31 | 2013-03-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate treating plant with same |
| CN103140011A (en) * | 2011-11-30 | 2013-06-05 | 亚树科技股份有限公司 | Vertical type plasma producing device |
| CN103167716A (en) * | 2011-12-19 | 2013-06-19 | 亚树科技股份有限公司 | Vertical type plasma generating device |
| CN103451621B (en) * | 2012-06-05 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | MOCVD reaction chamber and processing unit |
| CN103911601B (en) * | 2013-01-06 | 2016-07-06 | 深圳市宇光高科新能源技术有限公司 | A kind of shower plate and comprise the plasma case of this shower plate |
| CN104388908B (en) * | 2014-11-29 | 2017-12-29 | 洛阳康耀电子有限公司 | A kind of magnetron sputtering plating vacuum chamber wall body temperature control heating device and application process |
| CN104404472B (en) * | 2014-11-29 | 2017-08-25 | 洛阳康耀电子有限公司 | A kind of magnetron sputtering plating vacuum chamber temperature control door and application process |
| JP6757629B2 (en) * | 2016-08-30 | 2020-09-23 | 東京応化工業株式会社 | Substrate heating device, substrate heating method and infrared heater |
| CN108149225A (en) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | A kind of vacuum reaction device and reaction method |
| CN108588684B (en) * | 2018-05-23 | 2020-06-16 | 深圳市捷佳伟创新能源装备股份有限公司 | PECVD (plasma enhanced chemical vapor deposition) reaction furnace with newly added heat source in furnace and control method thereof |
| CN111501022A (en) * | 2020-06-20 | 2020-08-07 | 西南石油大学 | Multiunit heater response device |
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| CN2695449Y (en) * | 2004-05-22 | 2005-04-27 | 温振超 | Vacuum radiation type heater |
| CN2931495Y (en) * | 2006-05-18 | 2007-08-08 | 威海蓝星玻璃股份有限公司 | PECVD device for manufacturing amorphous silicon solar cell |
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