CN103911601B - A kind of shower plate and comprise the plasma case of this shower plate - Google Patents
A kind of shower plate and comprise the plasma case of this shower plate Download PDFInfo
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- CN103911601B CN103911601B CN201310003503.XA CN201310003503A CN103911601B CN 103911601 B CN103911601 B CN 103911601B CN 201310003503 A CN201310003503 A CN 201310003503A CN 103911601 B CN103911601 B CN 103911601B
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Abstract
The invention discloses a kind of shower plate and the plasma case comprising this shower plate, the main body of shower plate is corrosion resistant plate, and the lower face of corrosion resistant plate offers groove, and groove includes the exciting electrode groove and the ground electrode groove that are arranged alternately；Corrosion resistant plate is provided with groove both sides and runs through the through hole in the upper and lower plate face of corrosion resistant plate.This plasma case includes shower plate, cover plate and the N number of exciting electrode being alternately arranged and N+1 ground electrode, and N is integer；Outermost two ground electrodes, as the side plate of plasma case, form region of discharge between each adjacent electrode；Exciting electrode and the top of ground electrode, bottom are respectively equipped with a public shower plate；The shower plate top being positioned at top is provided with the hollow form cover plate of a bottom opening, and forms semi-enclosed cavity with cover plate, and cover plate is provided with air inlet.This shower plate can improve the uniformity of air pressure distribution in large area plasma case region of discharge, and then improves the uniformity of deposited film thickness.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly to a kind of shower plate and the plasma case comprising this shower plate.
Background technology
Plasma case device is generally used for deposition or stripping film or object is carried out surface treatment, thin film deposition aspect is such as at deposited on substrates silicon-based semiconductor thin film, form these thin film, the working gas of different component must be introduced the region of discharge in plasma case, then pass through radio-frequency (RF) energy and these working gas are excited into plasma, through series of chemical at the intended thin film of deposited on substrates.
Plasma case structure is as shown in Figure 1, plasma case alternately installs N number of exciting electrode 1-4 and N+1 ground electrode 1-5, wherein outermost two ground electrodes are as the side plate 1-12 of plasma case, each exciting electrode all independent by a radio-frequency power supply energy supply, between each adjacent electrode formed region of discharge 1-3.The top of electrode is equipped with a upper shower plate 1-1, for corrosion resistant plate, there is outer surface and inner surface, through hole 1-6 including several connection outer surfaces to inner surface, the top of upper shower plate 1-1 is formed semi-enclosed cavity 1-2 equipped with a cover plate 1-7, upper shower plate 1-1 and cover plate 1-7 and is connected by corrugated tube 1-9 with external feed stream system by the air inlet 1-8 arranged on cover plate 1-7.The bottom of electrode and the bottom of plasma case equipped with one with the public lower shower plate 1-10 of through hole 1-6, working gas is from storing the container cavity 1-2 that shower plate 1-1 and cover plate 1-7 is formed through gas handling system and corrugated tube 1-9 entrance, from upper shower plate, each exhausting hole 1-6 flows down, enter the region of discharge 1-3 of each pair of parallel pole formation and flow downward along region of discharge 1-3, the reacted gas all multi-through hole 1-6 on lower shower plate 1-10, stream, outside movable plasma case, is discharged by extract system.Polyester insulated piece it is mounted on to realize the insulation between exciting electrode 1-4 and movable plasma case between exciting electrode 1-4 and upper shower plate 1-1 and lower shower plate 1-10.
In large-scale plasma case, the purposes of shower plate is that working gas spreads to region of discharge that each pair of parallel pole is formed uniformly, in order to form thin film in uniform thickness.
In known conventional plasma case on shower plate the shape of through hole and distribution as shown in Figure 2, the shape of the two kinds of conventional holes used in Fig. 2 A and Fig. 2 B graphic extension prior art and distribution, the conventional shower plate hole that wherein Fig. 2 A shows is the evenly distributed clear opening with same apertures, and aperture Φ is 0.5mm to 1mm.
The conventional shower plate that Fig. 2 B shows is the evenly distributed hole with various sizes of entrance and exit diameter, entrance hole diameter more than outlet aperture, entrance hole diameter at about 1mm, outlet aperture less than entrance hole diameter at about 0.5mm.
Use the shower plate in the hole shown in Fig. 2 B with different entrance and exit aperture to improve the uniformity of deposition thin film to a certain extent relative to shower plate shown in Fig. 2 A, but do not reach gratifying effect.
nullWhen using large area plasma filming equipment，Increase along with plasma case size，In plasma case, the uniformity of working gas pressure often has not satisfied change，Its reason is just as the increase of plasma case linear dimension，When gas flows through long and narrow cavity，Working gas is no longer uniform in cavity pressure distribution everywhere，Cause there is very big difference by the gas flow of above-mentioned each conventional shower plate hole entrance region of discharge in the unit interval，Concrete，After working gas enters plasma case upper strata cavity at a high speed by cavity one end circle air inlet，Forwards and both sides transport，Because air inlet and high-speed gas transport the restriction of direction and inertia，The cavity space near air inlet is made to form the dead angle that gas is difficult to arrive smoothly，Gas pressure is relatively low，Along with the gas pressure that carries out transported tends to be steady gradually，But owing in this process, major part working gas is discharged through extract system after entering region of discharge reaction via shower plate，So it is more few closer to other end throughput，Gas pressure is also more low.The inhomogeneities distribution as shown in Fig. 5 curve 1 is presented from air inlet to other end gas pressure.
If working gas enters the heterogeneity of pressure distribution throughout after region of discharge to use the evenly distributed conventional shower plate of above described holes to cause, make unit volume reacting gas decomposition amount everywhere, namely film deposition rate changes along with the change of substrate position, in this case for length x0Being that the film gauge uniformity that the shower plate of 1330 ~ 1460mm causes is generally ± 4.2%, typical uniformity ± 3.0% required in manufacturing than industry is far short of what is expected, and the film gauge uniformity that larger this design of plasma case is caused is worse.
So, the such as shower plate of the plasma case of large area PECVD depositing system must have the special design uniformity requirement to meet in plasma treatment process.
Summary of the invention
For overcoming the defect of prior art, it is an object of the invention to propose a kind of uniformity of air pressure distribution in large area plasma case region of discharge of can improving and then the shower plate of raising deposited film thickness uniformity.
The present invention is achieved through the following technical solutions:
A kind of shower plate, its main body is corrosion resistant plate, and the lower face of described corrosion resistant plate offers groove, and described groove includes the exciting electrode groove and the ground electrode groove that are arranged alternately；Described corrosion resistant plate is provided with groove both sides and runs through the through hole in the upper and lower plate face of corrosion resistant plate.
Further, the quantity of described exciting electrode groove is N number of, and the quantity of described ground electrode groove is N-1, and described through hole is 2N row, and described N is integer.
Further, the degree of depth of described groove is the 1/3-2/3 of corrosion resistant plate thickness, and the described width of exciting electrode groove and the thickness of exciting electrode adapt, and the described width of ground electrode groove and the thickness of ground electrode adapt.
Further, described through hole includes the exit orifice, mesopore and the endoporus that are from top to bottom coaxially disposed；The longitudinal section of described exit orifice and mesopore is rectangle, and the aperture of mesopore is less than the aperture of exit orifice；The longitudinal section of described endoporus is trapezoidal and the aperture, top of endoporus is equal with the aperture of mesopore.
Further, arrays of openings has following two schemes:
The first: is with adjacent two through hole spacing d in row1It is 20mm, the two through hole spacing d that in adjacent two rows, distance is the shortest2It is 35mm；The aperture of described exit orifice, the aperture of mesopore and the aperture, bottom of endoporus are inversely proportional to through the pressure of respective aperture with gas Steady Flow respectively.
The second: the aperture Φ of described exit orifice1For 8mm, the aperture Φ of mesopore2For 1mm, the bottom diameter Φ of endoporus3For 2mm, the two through hole spacing d that in adjacent two rows, distance is the shortest2It is 35mm；With the spacing d of adjacent two through hole in row1It is inversely proportional to through the pressure of corresponding two through hole spacing middle position to gas Steady Flow.
Further, the hole height h of described exit orifice1For 8mm, the hole height h of mesopore2For 1mm, the hole height h of endoporus3For 1mm.
Another object of the present invention is to propose a kind of plasma case for plasma reinforced chemical vapor deposition system, including two as arbitrary in claim 1-7 as described in shower plate, also including cover plate and the N number of exciting electrode being alternately arranged and N+1 ground electrode, N is integer；
Outermost two ground electrodes are as the side plate of plasma case, and the inner side of two side plates respectively carries a substrate, and the remaining electrode except side plate carries two substrates respectively, form region of discharge between each adjacent electrode；Described exciting electrode and the top of ground electrode, bottom are respectively equipped with a public shower plate；The shower plate top at top is provided with the hollow form cover plate of a bottom opening, and forms semi-enclosed cavity with cover plate, and described cover plate is provided with air inlet.
Further, described air inlet is connected with external feed stream system by corrugated tube.
Further, between described exciting electrode and two shower plates, it is mounted on polyester insulated piece, to realize the insulation between exciting electrode and plasma case.
The beneficial effects of the present invention is:
1. the shower plate simple in construction of the present invention, it is easy to accomplish, it is adaptable to any plasma case, it is only necessary to the through hole of shower plate is made and slightly changes, it is not necessary to article on plasma case does bigger change.
2. the shower plate of the present invention not only can improve working gas in large area plasma case and, in region of discharge pressure distribution, improve the thickness evenness of deposition thin film, it is thus achieved that the semiconductive thin film of better quality.Also can increase the diffraction of gas, reduce the collision of gas molecule and hole wall, reduce the gas conduction of shower plate, improve the cleaning speed of shower plate.
3. after shower plate being improved according to the structure of the present invention, eliminate the defect that miscellaneous part in plasma case brings, improve the overall performance of plasma case.
Accompanying drawing explanation
Preferably executing example more specific description by the present invention shown in accompanying drawing, above-mentioned and other purpose, feature and the advantage of the present invention will become apparent from.It is to be understood that the purpose using accompanying drawing is the concept of the discussed embodiment of graphic extension text, not scale.
The plasma case comprising shower plate that Fig. 1 is common simplifies structural representation, wherein: the upper shower plate of 1-1-；1-2-cavity；1-3-region of discharge；1-4-exciting electrode；1-5-ground electrode；1-6-through hole；1-7-cover plate；1-8-air inlet；1-9-corrugated tube；Shower plate under 1-10-；1-11-groove；1-12-side plate；
Fig. 2 is shape and the distribution schematic top plan view in the two kinds of conventional shower plate holes used in structure shown in display Fig. 1；Wherein: the spray plate hole that Fig. 2 A shows is the evenly distributed clear opening with same apertures, and aperture Φ is 0.5mm to 1mm；The spray plate hole that Fig. 2 B shows is the evenly distributed hole with different entrance and exit diameter, entrance hole diameter: 1mm, outlet aperture: 0.5mm；
Fig. 3 is the distribution schematic top plan view spraying plate hole in the present invention, wherein: wherein d1Pitch of holes between-row；d2-adjacent two round spacing；
Fig. 4 is shower plate internal structure schematic side view in the present invention, wherein: h1-exit orifice is high；Φ1-exit orifice aperture；h2-mesopore is high；Φ2-mesopore pore size；h3-endoporus is high；Φ3Aperture ,-endoporus bottom；α-base angle；
Fig. 5 is air pressure distribution and the middle straight hole pore size distribution curve after improving on airintake direction in plasma case lumen body in structure shown in display Fig. 1, wherein: curve 1 is air pressure distribution curve in cavity；Curve 2 is the middle straight hole pore size distribution curve after improving；
Fig. 6 is the distribution schematic top plan view of spray plate hole according to a first embodiment of the present invention, wherein: Φ '1-exit orifice aperture；Φ′2-mesopore pore size；d′1Pitch of holes between-row；d′2-adjacent two round spacing；
Fig. 7 is the distribution schematic top plan view of spray plate hole according to a second embodiment of the present invention, wherein: Φ "1-exit orifice aperture；Φ″2-mesopore pore size；d″1Pitch of holes between-row；d″2-adjacent two round spacing；
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Elaborate a lot of detail in the following description so that fully understanding the present invention.But the present invention can implement being much different from other modes described here, and those skilled in the art can do similar popularization when without prejudice to intension of the present invention.Therefore the invention of this reality is not by the restriction of specific embodiment described below.
The shower plate of the present invention and the plasma case comprising these parts are applicable to but are not limited to the production of PDP, LCD, solar cell the large area plasma precipitation equipment of practicality.
Embodiment 1
In this example for the plasma case structure of the large-scale PECVD system of plated film as shown in Figure 1, plasma case alternately installs N number of exciting electrode 1-4 and N+1 ground electrode 1-5(N be integer, be especially preferred with 5≤N≤10), wherein outermost two ground electrodes are as the side plate 1-12 of plasma case, each exciting electrode all independent by a radio-frequency power supply energy supply, between each adjacent electrode formed region of discharge 1-3.Exciting electrode and ground electrode are arranged between two shower plates, namely the top of exciting electrode and ground electrode is equipped with a public upper shower plate 1-1, its main body is corrosion resistant plate, there is upper face and lower face, corrosion resistant plate offers the 2N exhausting hole 1-6(N extending vertically through upper and lower plate face and is integer, is especially preferred with 5≤N≤10).The top of upper shower plate 1-1 forms semi-enclosed cavity 1-2 equipped with the hollow form cover plate 1-7 of a bottom end opening, upper shower plate 1-1 and cover plate 1-7, and this cover plate 1-7 is provided with air inlet 1-8, and this air inlet is connected with external feed stream system by corrugated tube 1-9.The bottom (i.e. the bottom of plasma case) of exciting electrode and ground electrode is also equipped with a public lower shower plate 1-10, and the structure of upper and lower shower plate is identical, and is separately positioned on top and the bottom of electrode in symmetrical fashion.Working gas is from storing in the container cavity 1-2 that shower plate 1-1 and cover plate 1-7 is formed through gas handling system and corrugated tube 1-9 entrance, then flow down from each exhausting hole 1-6 of upper shower plate, enter the region of discharge 1-3 of each pair of parallel pole formation and flow downward along region of discharge 1-3, the reacted gas all multi-through hole 1-6 on lower shower plate 1-10, stream, outside movable plasma case, is discharged by extract system.Exciting electrode 1-4 and upper and lower be mounted on polyester insulated piece between shower plate 1-1,1-10 to realize the insulation between exciting electrode 1-4 and plasma case.
On, the thickness of lower shower plate is 10mm, on, the area of lower shower plate is: (410 ~ 830) × (1330 ~ 1460) mm, the rectangular recess 1-11 that width is different it is symmetrically distributed with on the lower face of upper shower plate 1-1 and on the upper face of lower shower plate 1-10, depth of groove is 5mm, width bits 10mm and 20mm is alternately arranged, its effect is exciting electrode and ground electrode to be stuck in, between lower shower plate, wherein the groove of width 10mm is as ground electrode groove, it is directly connected to ground electrode, the groove of width 20mm is as exciting electrode groove, it is connected with exciting electrode again after first connecting polyester insulated piece, to realize the insulation between exciting electrode and movable plasma case.
Being respectively symmetrically on upper and lower shower plate and be provided with 2N exhausting hole 1-6, as shown in Figure 4, through hole includes the exit orifice, mesopore and the endoporus that are from top to bottom coaxially disposed；The longitudinal section of exit orifice and mesopore is rectangle, and the aperture of mesopore is less than the aperture of exit orifice；The longitudinal section of endoporus be trapezoidal and the top end diameter of endoporus and the aperture of mesopore equal.As shown in Figure 6, two through hole spacing (the i.e. adjacent two round spacing) d ' that in adjacent two rows, distance is the shortest2Identical, it is 35mm, with adjacent two through hole spacing in row (i.e. pitch of holes between row) d '1Identical, it is 20mm；The longitudinal section of through hole is class infundibulate.As it is shown in figure 5, during due to gas Steady Flow, at shower plate central gas equalization of pressure, each through-hole aperture therefore often arranging middle part in this example is all identical, and each parameter is as follows: exit orifice height h '1: 8mm, exit orifice aperture Φ '1: 8mm, mesopore height h '2: 1mm, mesopore pore size Φ '2: 1mm, endoporus height h '3: 1mm, the aperture, top of endoporus is identical with mesopore pore size, aperture, bottom Φ '3: 2mm, the base angle of endoporus: 64 °.Base angle selects 64 ° herein, and the gas of this angle injection can arrive the substrate top edge being close to electrode smoothly.The exit orifice aperture of shower plate two ends through hole, mesopore pore size and endoporus bottom diameter are inversely proportional to through the pressure of respective aperture with gas Steady Flow respectively, exit orifice aperture Φ '1It is distributed as shown in Fig. 5 curve 2, mesopore pore size Φ '2With endoporus bottom aperture Φ '3Above-mentioned parameter basis is done and changes in proportion.
So exit orifice aperture Φ '1Change at 8-9.6mm, mesopore pore size Φ '2Change at 1-1.2mm, endoporus bottom aperture Φ '3Change at 2-2.4mm.
Adopt the plasma case of shower plate produces in the present embodiment thickness of semiconductor film uniformity within the scope of ± 0.9-1.2%, typical uniformity ± 3.0% required in manufacturing much smaller than industry.Adopt the uniformity of film that the plasma case of the shower plate (Fig. 3, Fig. 4) that hole shape is identical, hole size is identical, pitch of holes is identical is made at ± 3.5-3.8% under similarity condition.Adopt the uniformity of film that the plasma case of (Fig. 2 A, 2B) shower plate is made about ± 4.2% under similarity condition.
Embodiment 2
The plasma case structure of the large-scale PECVD system for plated film described in this example, substantially with embodiment 1, has different being in that only:
As it is shown in fig. 7, on upper shower plate 1-1 and lower shower plate 1-10, the aperture of each through hole is identical in this example, parameter is as follows: two through hole spacing (the i.e. adjacent two round spacing) d that in adjacent two rows, distance is the shortest2Identical, it is 35mm；Exit orifice height h "1: 8mm, exit orifice aperture Φ "1: 8mm, mesopore height h "2: 1mm, mesopore pore size Φ "2: 1mm, inner hole section is trapezoidal, endoporus height h "3: 1mm, bottom diameter Φ "3: 2mm, base angle: 64 °.With adjacent two through hole spacing in row (i.e. pitch of holes between row) d "1It is inversely proportional to through the pressure of corresponding two through hole spacing middle position to gas Steady Flow, so pitch of holes d between row "1More little the closer to two ends, change at 16.67-20mm.
Adopt the plasma case of shower plate produces in the present embodiment thickness of semiconductor film uniformity within the scope of ± 0.9-1.2%, under similarity condition, adopt the uniformity of film that the plasma case of the shower plate (Fig. 3, Fig. 4) that hole shape is identical, hole size is identical, pitch of holes is identical is made at ± 3.5-3.8%.Adopt the uniformity of film that the plasma case of (Fig. 2 A, 2B) shower plate is made about ± 4.2% under similarity condition.
The distribution of the spray plate hole of the embodiment of the present invention 1 and example 2 design, after making working gas enter region of discharge, pressure distribution is more uniform, improves the uniformity of deposited film thickness distribution.
Although the present invention with preferred embodiment openly as above, but is not intended to limit the present invention.Any those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may be by method disclosed above and technology contents and technical solution of the present invention is made many possible variations and modification, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content without departing from technical solution of the present invention, the technical spirit of the foundation present invention, to inventing any simple modification, equivalent variations and the modification done above, all still falls within the protection domain of technical solution of the present invention.
Claims (8)
1. a shower plate, it is characterised in that: the main body of this shower plate is corrosion resistant plate, and the lower face of described corrosion resistant plate offers groove, and described groove includes the exciting electrode groove and the ground electrode groove that are arranged alternately；Described corrosion resistant plate is provided with groove both sides and runs through the through hole in the upper and lower plate face of corrosion resistant plate；
The degree of depth of described groove is the 1/3 2/3 of corrosion resistant plate thickness, and the described width of exciting electrode groove and the thickness of exciting electrode adapt, and the described width of ground electrode groove and the thickness of ground electrode adapt；
Described through hole includes the exit orifice, mesopore and the endoporus that are from top to bottom coaxially disposed；The longitudinal section of described exit orifice and mesopore is rectangle, and the aperture of mesopore is less than the aperture of exit orifice；The longitudinal section of described endoporus is trapezoidal and the aperture, top of endoporus is equal with the aperture of mesopore.
2. shower plate as claimed in claim 1, it is characterised in that:
The quantity of described exciting electrode groove is N number of, and the quantity of described ground electrode groove is N-1, and described through hole is 2N row, and described N is integer.
3. shower plate as claimed in claim 1, it is characterised in that:
With adjacent two through hole spacing d in row1It is 20mm, the two through hole spacing d that in adjacent two rows, distance is the shortest2It is 35mm；The aperture of described exit orifice, the aperture of mesopore and the bottom diameter of endoporus are inversely proportional to through the pressure of respective aperture with gas Steady Flow respectively.
4. shower plate as claimed in claim 1, it is characterised in that:
The aperture Φ of described exit orifice1For 8mm, the aperture Φ of mesopore2For 1mm, aperture, the bottom Φ of endoporus3For 2mm, the two through hole spacing d that in adjacent two rows, distance is the shortest2It is 35mm；With the spacing d of adjacent two through hole in row1It is inversely proportional to through the pressure of corresponding two through hole spacing middle position to gas Steady Flow.
5. the shower plate as described in claim 3 or 4, it is characterised in that:
The hole height h of described exit orifice1For 8mm, the hole height h of mesopore2For 1mm, the hole height h of endoporus3For 1mm.
6. the plasma case for plasma reinforced chemical vapor deposition system, it is characterized in that: this plasma case include two as arbitrary in claim 1-5 as described in shower plate, also including cover plate and the N number of exciting electrode being alternately arranged and N+1 ground electrode, N is integer；
Outermost two ground electrodes are as the side plate of plasma case, and the inner side of two side plates respectively carries a substrate, and the remaining electrode except side plate carries two substrates respectively, form region of discharge between each adjacent electrode；Described exciting electrode and the top of ground electrode, bottom are respectively equipped with a public shower plate；The shower plate top being positioned at top is provided with the hollow form cover plate of a bottom opening, and forms semi-enclosed cavity with cover plate, and described cover plate is provided with air inlet.
7. plasma case as claimed in claim 6, it is characterised in that:
Described air inlet is connected with external feed stream system by corrugated tube.
8. plasma case as claimed in claim 6, it is characterised in that:
It is mounted on polyester insulated piece, to realize the insulation between exciting electrode and plasma case between described exciting electrode and two shower plates；
Each exciting electrode all independent by a radio-frequency power supply energy supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310003503.XA CN103911601B (en) | 2013-01-06 | 2013-01-06 | A kind of shower plate and comprise the plasma case of this shower plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310003503.XA CN103911601B (en) | 2013-01-06 | 2013-01-06 | A kind of shower plate and comprise the plasma case of this shower plate |
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| CN103911601A CN103911601A (en) | 2014-07-09 |
| CN103911601B true CN103911601B (en) | 2016-07-06 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101018886A (en) * | 2004-07-12 | 2007-08-15 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser curvature |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
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2013
- 2013-01-06 CN CN201310003503.XA patent/CN103911601B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101018886A (en) * | 2004-07-12 | 2007-08-15 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser curvature |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
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