CN101914754A - 氧化锌类靶 - Google Patents
氧化锌类靶 Download PDFInfo
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- CN101914754A CN101914754A CN2009102584923A CN200910258492A CN101914754A CN 101914754 A CN101914754 A CN 101914754A CN 2009102584923 A CN2009102584923 A CN 2009102584923A CN 200910258492 A CN200910258492 A CN 200910258492A CN 101914754 A CN101914754 A CN 101914754A
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 44
- 229960001296 zinc oxide Drugs 0.000 title claims abstract description 39
- 239000010936 titanium Substances 0.000 claims abstract description 54
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 37
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 31
- 230000007613 environmental effect Effects 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 24
- 239000011248 coating agent Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 238000012360 testing method Methods 0.000 description 12
- 238000007493 shaping process Methods 0.000 description 11
- 238000000465 moulding Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 7
- 238000001914 filtration Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011812 mixed powder Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Abstract
本发明的课题在于提供一种耐环境性优异的氧化锌类靶。所述氧化锌类靶以氧化锌为主要成分,含有钛(Ti)和镓(Ga)两种元素,两元素含量为钛1.1at%以上或镓4.5at%以上的范围。
Description
技术领域
本发明涉及一种以氧化锌为主要成分的氧化锌类靶。
背景技术
透明导电膜在红外线屏蔽板和静电屏蔽板的用途、面发热体或触摸开关等的导电膜、显示装置等的透明电极的需求不断提高。作为这样的透明导电膜目前利用的是掺杂有锡的氧化铟膜(ITO),但由于ITO价格高,因此期望廉价的透明导电膜的出现。
因此,作为比ITO廉价的膜的氧化锌类透明导电膜受到关注,市场上销售的有在氧化锌中添加了氧化铝的AZO或添加了氧化镓的GZO等。
然而,这些氧化锌类透明导电膜与ITO相比,导电性和耐久性差,正在研究寻求高导电性和稳定化而添加有各种元素的透明导电膜(参照专利文献1~4等)。另外,特别是在研究将Ga作为添加元素添加的透明导电膜(参照专利文献5~7等)。
然而,这种氧化锌类透明导电膜存在实际应用该膜时蚀刻速度太快、难以形成图案的问题,另外还存在耐环境性差的问题。
专利文献1:日本特开昭62-154411号公报(权利要求书)
专利文献2:日本特开平9-45140号公报(权利要求书)
专利文献3:日本特开2002-75061号公报(权利要求书)
专利文献4:日本特开2002-75062号公报(权利要求书)
专利文献5:日本特开平10-306367号公报(权利要求书)
专利文献6:日本特开平11-256320号公报(权利要求书)
专利文献7:日本特开平11-322332号公报(权利要求书)
发明内容
本发明的课题在于,鉴于上述情况,提供一种可以形成耐环境性优异的氧化锌类透明导电膜的氧化锌类靶。
解决上述课题的本发明的第1方式是一种氧化锌类靶,其特征在于,具有氧化物烧结体,该氧化物烧结体以氧化锌为主要成分、含有钛(Ti)和镓(Ga)两种元素、两种元素的含量为钛1.1at%以上或镓4.5at%以上的范围。
在这种第1方式中,通过以规定范围含有钛(Ti)和镓(Ga)两种元素,得到可以形成耐环境性优异的膜的氧化锌类靶。
本发明的第2方式是一种氧化锌类靶,其特征在于,在第1方式所述的氧化锌类靶中,镓含量y(at%)在以钛含量x(at%)表示的值(-2x+10.4)以下的范围,且在以钛含量x(at%)表示的值(-0.5x+1.1)以上的范围。
在这种第2方式中,通过将钛和镓设定在所期望的范围,得到可以形成膜的电阻率更小、电导电性更好的氧化锌类透明导电膜的氧化锌类靶。
本发明的第3方式是一种氧化锌靶,其特征在于,在第1或2方式所述的氧化锌类靶中,镓含量y(at%)在以钛含量x(at%)表示的值(-x+3.4)以下、(x-0.9)以下或(-2.3x+10.1)以上的范围。
在这种第3方式中,通过将钛和镓设定在所期望的范围,得到可以形成载流子密度特别小、相当于近红外区域的长波长的光的透射性更加提高、特别适合太阳能电池用途的膜的氧化锌类靶。
对本发明的氧化锌类靶而言,通过在规定的范围内含有钛(Ti)和镓(Ga)两元素,具有可以形成耐环境性优异的膜的效果。
附图说明
图1为表示实施例和比较例中成膜的膜的电阻率的氧分压依存性的图。
图2为表示耐环境性试验的测定结果的图。
图3为表示耐环境性试验和电阻率的测定结果的图。
图4为表示耐环境性试验和电阻率的测定结果的图。
图5为表示耐环境性试验和载流子密度的测定结果的图。
具体实施方式
本发明的氧化锌类靶是基于如下见解而完成的,即,如果制成以氧化锌为主要成分、同时添加有镓和钛的烧结体,则可以形成耐环境性显著提高的氧化锌类透明导电膜。
本发明的氧化锌类靶具有含有钛(Ti)和镓(Ga)两元素作为添加元素的氧化物烧结体,两元素的含量为钛1.1at%以上或镓4.5at%以上的范围,即,所述范围不包括钛低于1.1at%且镓低于4.5at%的区域。因为如果两元素的含量在这些范围内,就可以形成耐环境性得到提高的膜,在此范围外,就无法显著地得到可以形成耐环境性得到提高的膜的效果。
在此,所谓氧化锌类靶是具备氧化锌类烧结体的靶,除了利用溅射的透明导电膜的成膜中使用的溅射靶以外,还包括利用离子镀的透明导电膜的成膜中使用的离子镀用靶(也称为靶丸(pellet))。
即,在本发明的范围中,如后所述,耐环境试验的结果,得到可以形成电阻率的变化小至7%以下、具有可耐实用的耐环境性的膜的靶。
而且,本申请中,各金属元素的含量(at%)用相对于所有金属元素的摩尔数的Ti和Ga的摩尔数的比例(Ti/(Zn+Ti+Ga)、Ga/(Zn+Ti+Ga))来表示。
在此,耐环境试验是测定在60℃、相对湿度为90%的环境下放置250小时时的前后的电阻率的变化。只要电阻率的变化(增加)在7%以内,就可判断在装置设计上没有大的问题,可耐实用。
在此,电阻率的变化率(%)用下式表示。而且,由于电阻率减少时在装置设计上没有大的问题,因此,满足变化在7%以下的条件。
电阻率的变化率(%)=[(耐环境试验后的电阻率/耐环境试验前的电阻率)-1]×100
另外,特别优选镓含量y(at%)在以钛含量x(at%)表示的值(-2x+10.4)以下的范围,且在以钛含量x(at%)表示的值(-0.5x+1.1)以上的范围的氧化锌类靶。
另外,特别是镓含量y(at%)在以钛含量x(at%)表示的值(-2.5x+9.8)以下、且在(-0.5x+1.1)以上的范围内,得到可以形成电阻率为1.5×10-3Ωcm以下的更加良好的膜的靶。
因为通过在该范围含有镓和钛,得到可以形成电阻率特别小至2.5×10-3Ωcm以下或1.5×10-3Ωcm以下、导电性更优异的膜的靶。
电阻率优选为2.5×10-3Ωcm以下或1.5×10-3Ωcm以下,是因为在例如液晶显示器的阵列侧电极中,只要在1×10-3Ωcm左右,就认为可以使用,因而在实用上优选。
而且,特别优选的氧化锌类靶的特征在于,镓含量y(at%)在以钛含量x(at%)表示的值(-x+3.4)以下、(x-0.9)以下或(-2.3x+10.1)以上的范围。
通过在这样的范围含有镓和钛,由于得到载流子密度更小、容易使相当于近红外区域的长波长的光透过的膜,因此,可以形成适合例如太阳能电池用途的透明导电膜。
当设定为上述适合的范围时,载流子密度为4.0×1020cm-3以下,优选用于太阳能电池的用途。
在此,引起光的吸收、反射的自由电子的等离子体振动位于长波长侧的膜的相当于近红外区域的长波长侧的透射率高。引起等离子体振动的等离子体波长用下式表示,载流子密度小,则等离子体波长成为长波长侧。
[数学式1]
在此,c为光速3.0×1010[cm/s]、e为电子电荷4.8×10-10esu、ne为载流子密度[cm-3]、ε0=π/4、ε为介电常数(=折射率的平方、n2=2.02=4.0),m*为氧化锌的电子的有效质量(0.28×9.1×10-28[g])、μ为迁移率[cm2/V·s]。
载流子密度为4×1020cm-3时,等离子体波长为1650nm左右,长波长的光也能充分透过。
对作为本发明的对象的氧化锌类靶的制造方法进行说明,但这只是示例,制造方法没有特别限定。
首先,作为构成本发明的靶的原材料,一般为氧化锌(ZnO)、氧化镓(Ga2O3)、氧化钛(TiO2)的粉末,也可以将它们的单体、化合物、复合氧化物等作为原料。使用单体、化合物时要经过预先制成氧化物这样的程序。
将这些原料粉末以规定的配合比例混合、成形的方法没有特别限定,可以使用目前公知的各种湿式法或干式法。
作为干式法,可以列举冷压(Cold Press)法、热压(Hot Press)法等。在冷压法中,将混合粉末填充在成形模中,制作成形体,进行焙烧。在热压法中,在成形模中对混合粉末进行焙烧,使其烧结。
作为湿式法,优选使用例如过滤式成形法(参照日本特开平11-286002号公报)。该过滤式成形法是,使用过滤式成形模,制备由混合粉末、离子交换水和有机添加剂构成的浆料,将该浆料注入过滤式成形模,只从该过滤器面一侧对浆料中的水分进行减压排水来制作成形体,将得到的陶瓷成形体干燥脱脂后,进行焙烧,所述过滤式成形模是用于从陶瓷原料浆料中对水分进行减压排水而得到成形体的由非水溶性材料构成的过滤式成形模,包括具有1个以上抽水孔的成形用下模、载置于该成形用下模上的具有透水性的过滤器、借助用于密封该过滤器的密封材料从上面一侧夹持的成形用型框,上述成形用下模、成形用型框、密封材料、以及过滤器以各自可以拆卸的方式组装在一起,只从该过滤器面一侧对浆料中的水分进行减压排水。
用冷压法或湿式法成形的成形体的焙烧温度优选为1000~1500℃、更优选为1000~1300℃,其环境为空气环境、氧环境、非氧化性环境、或真空环境等。另一方面,在热压法的情况下优选在900~1300℃使其烧结,其环境为非氧化性环境、真空环境等。而且,在各方法中进行焙烧后,进行机械加工以成形、加工为规定的尺寸,制成靶。
实施例
下面,根据以溅射靶为例的实施例说明本发明,但并不限定于这些。
(溅射靶制造例1~50)
以相对于所有金属元素的摩尔数的Ti和Ga的摩尔数的比例(Ti/(Zn+Ti+Ga)、Ga/(Zn+Ti+Ga))相当于下述表1和表2中作为样品A1~A50表示的摩尔比的比例,准备总量约1.0kg的BET=3.59m2/g的ZnO粉末、BET=7.10m2/g的TiO2粉末以及BET=13.45m2/g的Ga2O3粉末,将其用球磨机混合。然后,以相对于混合粉末为6.6wt%的比例添加作为粘合剂的4wt%的聚乙烯醇水溶液并混合,进行冷压得到成形体。
通过将该成形体在大气中以60℃/h的升温速度升温,在600℃脱脂10小时。接着,在大气中以100℃/h从室温升温到1300℃后,在1300℃焙烧8小时,然后以100℃/h冷却到室温,得到烧结体。将得到的烧结体进行平面研磨,得到Φ100mm×6mm t的靶。
另外,对得到的烧结体用I CP进行分析时,结果确认与原料配合组成基本相同。
(AZO溅射靶制造例)
以相对于所有金属元素的摩尔数的A1的摩尔数的比例(A1/(Zn+A1))相当于2.4at%的比例,准备总量约1.0kg的BET=3.59m2/g的ZnO粉末、BET=3.89m2/g的Al2O3粉末,将其用球磨机混合。然后,以相对于混合粉末为6.6wt%的比例添加作为粘合剂的4wt%的聚乙烯醇水溶液并混合,进行冷压得到成形体。
将该成形体在大气中以60℃/h升温,在600℃脱脂10小时。接着,在大气中以100℃/h从室温升温到1300℃后,在1300℃焙烧8小时,然后以100℃/h冷却到室温,得到烧结体。将得到的烧结体进行平面研磨,得到Φ100mm×6mm t的靶。
(成膜例)
在4英寸阴极的DC磁控溅射装置上分别安装各制造例的溅射靶和AZO溅射靶,在基板温度250℃、使氧分压在0~2.0sccm内每次变化0.5sccm(相当于0~6.6×10-3Pa)的同时,得到透明导电膜。
这样得到的透明导电膜是与溅射而成的透明导电膜用溅射靶的组成为相同组成的氧化锌类透明导电膜。这种氧化锌类透明导电膜的组成分析可以将单膜完全溶解、用ICP进行分析。另外,在膜自身成为元件构成的情况等,根据需要利用FIB等切出该部分的断面,用附属于SEM、TEM等的元素分析装置(EDS、WDS、俄歇分析等)也能进行确定。
靶尺寸:Φ=100mm、t=6mm
溅射方式:DC磁控溅射
排气装置:回转泵+低温泵
到达真空度:3×10-5Pa以下
Ar压力:4.0×10-1Pa
氧压力:0~6.6×10-3Pa
基板温度:250℃
溅射功率:130W(功率密度1.6W/cm2)
使用基板:コ一ニング1737#(液晶显示器用玻璃)
50mm×50mm×0.8mm t
将使氧分压变化而成膜的透明导电膜分别裁剪成10mm×10mm大小,利用范德堡法(Van der Pauw法)(TOYO-TECHNICA制,霍尔系数测定装置ResiTest8300),分别测定电阻率。
图1(b)表示比较例的掺杂有2.4at%的铝(A1)的ZnO(AZO)膜的电阻率的氧分压依存性。如图中所示,对电阻率而言,在氧分压为0时电阻率最低。另外,掺杂有2at%的Ti和1 at%的Ga的ZnO膜(样品A24)的电阻率的氧分压依存性示于图1(a)。样品A24的氧分压依存性显示出与AZO膜相同的特性。其他样品组成中的TiGa类ZnO膜也都显示出相同的特性。因此,表1和表2中所示的特性值均为氧分压为0时的数据。
试验例1(耐环境性试验)
将氧分压为0而成膜的各透明导电膜分别裁剪成10mm×10mm大小,首先,利用范德堡法(TOYO-TECHNICA制,霍尔系数测定装置ResiTest8300)测定电阻率,然后封入恒温恒湿器内(ESPEC制PR-2KP),在60℃、90%RH环境中放置250小时后,再次测定电阻率,计算放置前后的电阻率的变化率。另外,使恒温恒湿器内升降温时,通过控制温度和湿度而使样品不结露。
将该结果示于表1和表2中。
该结果表明,在钛低于1.1at%且镓低于4.5at%的范围的样品A1~A10以及镓为0%的样品A16、A22中,电阻率的变化率超过7%,含量在此之外的范围的样品中,电阻率的变化率为7%以下。即,由表1的数据表明,钛为1.2at%以上,电阻率的变化率为7%以下,表明电阻率的变化率为7%以下的样品的钛为1.1at%以上且镓为4.5at%以上是表1、表2所示数据以外的数据的倾向。
图2中,将耐环境性试验结果在7%以内的样品表示为○、超过7%的样品表示为●。
试验例2(电阻率测定)
将氧分压为0而成膜的各透明导电膜分别裁剪成10mm×10mm大小,利用范德堡法(TOYO-TECHNICA制,霍尔系数测定装置ResiTest8300)测定电阻率。
将该结果示于表1和表2中。
由该结果可知,在镓含量y(at%)为以钛含量x(at%)表示的值(-2x+10.4)以下的范围、且以钛含量x(at%)表示的值(-0.5x+1.1)以上的范围的透明导电膜中,电阻率为2.5×10-3Ωcm以下。另一方面,在其含量超出该范围的样品中,电阻率大于2.5×10-3Ωcm。而且,表明电阻率为2.5×10-3Ωcm以下的以钛含量x(at%)表示的值为(-2x+10.4)以下的范围的界限在镓含量y(at%)为以钛含量x(at%)表示的值(-0.5x+1.1)以上的范围,是包括表1、2所示数据以外的数据而进行综合判断的结果。
图3中,将耐环境性试验结果在7%以内的电阻率在2.5×10-3Ωcm以下的样品表示为□、电阻率超过2.5×10-3Ωcm的样品表示为■,将耐环境性试验结果超过7%的样品表示为●。
另外可知,特别是在镓含量y(at%)为以钛含量x(at%)表示的值(-2.5x+9.8)以下、且(-0.5x+1.1)以上的范围的样品中,电阻率为1.5×10-3Ωcm以下。而且,表明电阻率为1.5×10-3Ωcm以下的以钛含量x(at%)表示的值(-2x+10.4)以下的范围的界限在镓含量y(at%)为以钛含量x(at%)表示的值(-2.5x+9.8)以下且为(-0.5x+1.1)以上的范围,是包括表1、2所示数据以外的数据而进行综合判断的结果。
图4中,将在图3中电阻率为1.5×10-3Ωcm以下的样品表示为◇。
试验例3(霍尔系数测定)
将氧分压为0而成膜的各透明导电膜进行裁剪,根据利用范德堡法(TOYO-TECHNICA制,霍尔系数测定装置ResiTest8300)进行的霍尔系数测定,分别测定各膜的载流子密度和载流子迁移率。
将该结果表示于表1和表2中。
由该结果可知,镓含量y(at%)为以钛含量x(at%)表示的值(-x+3.4)以下、(x-0.9)以下或(-2.3x+10.1)以上范围的样品中,载流子密度为4.0×1020cm-3以下。另一方面,在其含量超出此范围的样品中,载流子密度大于4.0×1020cm-3。而且,表明载流子密度为4.0×1020cm-3以下的范围,镓含量y(at%)为以钛含量x(at%)表示的值(-x+3.4)以下、(x-0.9)以下或(-2.3x+10.1)以上的范围,是包括表1、2所示数据以外的数据而进行综合判断的结果。
图5中,将耐环境性试验结果在7%以内的载流子密度为4.0×1020cm-3以下的样品表示为△、载流子密度超过4.0×1020cm-3的样品表示为▲,将耐环境性试验结果超过7%的样品表示为●。
表1
Ti添加量(at%) | Ga添加量(at%) | 耐环境性试验结果(%) | 电阻率(Ω·cm) | 载流子密度(cm-3) | |
A 1 | 0 | 2.5 | 52.4 | 7.9E-04 | 4.8E+20 |
A 2 | 0 | 3 | 45.7 | 8.3E-04 | 4.1E+20 |
A 3 | 0.1 | 3 | 30 | 8.4E-04 | 4.1E+20 |
A 4 | 0.5 | 1 | 9.8 | 1.7E-03 | 2.0E+20 |
A 5 | 1 | 0 | 8.1 | 8.7E-03 | 7.9E+19 |
A 6 | 1 | 0.5 | 8.1 | 3.3E-03 | 1.3E+20 |
A 7 | 1 | 1 | 7.9 | 1.4E-03 | 2.4E+20 |
A 8 | 1 | 2.5 | 7.2 | 9.1E-04 | 4.2E+2O |
A 9 | 1 | 3 | 7.4 | 8.2E-04 | 4.9E+20 |
A 10 | 1 | 4 | 7.1 | 7.2E-04 | 6.3E+20 |
A 11 | 1 | 4.5 | 6.0 | 7.1E-04 | 6.5E+20 |
A 12 | 1 | 6 | 4.6 | 7.9E-04 | 6.8E+20 |
A 13 | 1 | 7 | 4.3 | 1.5E-03 | 4.3E+20 |
A 14 | 1 | 8 | 4.0 | 2.5E-03 | 3.0E+20 |
A 15 | 1 | 8.5 | 3.8 | 4.0E-03 | 2.0E+20 |
A 16 | 1.2 | 0 | 7.9 | 7.9E-03 | 8.0E+19 |
A 17 | 1.2 | 1 | 6.8 | 1.2E-03 | 3.0E+20 |
A 18 | 1.2 | 2 | 7.0 | 9.9E-04 | 3.7E+20 |
A 19 | 1.5 | 0.5 | 7.0 | 1.1E-03 | 2.5E+20 |
A 20 | 1.5 | 1 | 6.9 | 1.1E-03 | 3.0E+20 |
A 21 | 1.5 | 3 | 6.9 | 1.2E-03 | 4.2E+20 |
A 22 | 2 | 0 | 7.2 | 4.2E-03 | 1.2E+20 |
A 23 | 2 | 0.5 | 6.8 | 1.0E-03 | 2.8E+20 |
A 24 | 2 | 1 | 6.5 | 8.5E-04 | 3.8E+20 |
A 25 | 2 | 1.5 | 6.2 | 8.7E-04 | 4.2E+20 |
A 26 | 2 | 2 | 5.4 | 9.9E-04 | 4.6E+20 |
A 27 | 2 | 4 | 4.8 | 1.3E-03 | 5.3E+20 |
A 28 | 2 | 5.5 | 3.7 | 2.1E-03 | 4.2E+20 |
A 29 | 2 | 6 | 3.6 | 2.5E-03 | 3.9E+20 |
A 30 | 2.5 | 1.5 | 5.7 | 1.1E-03 | 4.0E+20 |
表2
Ti添加量(at%) | Ga添加量(at%) | 耐环境性试验结果(%) | 电阻率(Ω·cm) | 载流子密度(cm-3) | |
A 31 | 3 | 0.5 | 5.7 | 1.3E-03 | 3.3E+20 |
A 32 | 3 | 1 | 4.3 | 1.1E-03 | 3.6E+20 |
A 33 | 3 | 1.5 | 5.1 | 1.2E-03 | 3.8E+20 |
A 34 | 3 | 2 | 4.6 | 1.4E-03 | 3.8E+20 |
A 35 | 3 | 2.5 | 4.5 | 1.6E-03 | 4.1E+20 |
A 36 | 3 | 3 | 4.5 | 1.6E-03 | 4.3E+20 |
A 37 | 3 | 3.5 | 4.2 | 2.0E-03 | 3.8E+20 |
A 38 | 3 | 4 | 4.1 | 2.5E-03 | 3.5E+2O |
A 39 | 3 | 4.5 | 3.9 | 3.3E-03 | 2.9E+2O |
A 40 | 3 | 6 | 3.5 | 6.9E-03 | 2.0E+20 |
A 41 | 3.5 | 1.5 | 4.6 | 1.6E-03 | 3.5E+2O |
A 42 | 4 | 0.5 | 3.9 | 1.6E-03 | 2.9E+20 |
A 43 | 4 | 1.5 | 3.4 | 1.9E-03 | 3.1E+20 |
A 44 | 4 | 1 | 3.9 | 1.8E-03 | 2.9E+20 |
A 45 | 4 | 2 | 4.0 | 2.1E-03 | 3.2E+20 |
A 46 | 5 | 0.5 | 3.9 | 2.9E-03 | 2.3E+20 |
A 47 | 5 | 1 | 3.9 | 3.2E-03 | 2.2E+20 |
A 48 | 6 | 1 | 4.2 | 9.0E-03 | 1.3E+20 |
A 49 | 6 | 2 | 3.5 | 1.3E-02 | 1.2E+20 |
A 50 | 6 | 3 | 3.4 | 2.0E-02 | 1.0E+20 |
Claims (3)
1.一种氧化锌类靶,其特征在于,具有氧化物烧结体,该氧化物烧结体以氧化锌为主要成分、含有钛(Ti)和镓(Ga)两种元素、两种元素的含量为钛1.1at%以上或镓4.5at%以上的范围。
2.如权利要求1所述的氧化锌靶,其特征在于,其中,镓含量y(at%)在以钛含量x(at%)表示的值(-2x+10.4)以下的范围,且在以钛含量x(at%)表示的值(-0.5x+1.1)以上的范围。
3.如权利要求1或2所述的氧化锌靶,其特征在于,其中,镓含量y(at%)在以钛含量x(at%)表示的值(-x+3.4)以下、(x-0.9)以下或(-2.3x+10.1)以上的范围。
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JP2008052913A (ja) * | 2006-08-22 | 2008-03-06 | Sumitomo Chemical Co Ltd | 透明導電膜およびその製造方法 |
JP5003600B2 (ja) * | 2008-06-13 | 2012-08-15 | 住友金属鉱山株式会社 | 酸化物焼結体、ターゲット、およびそれを用いて得られる透明導電膜、導電性積層体 |
JP5585046B2 (ja) * | 2009-10-27 | 2014-09-10 | 東ソー株式会社 | 複合酸化物焼結体、ターゲット及び酸化物透明導電膜 |
WO2011102425A1 (ja) * | 2010-02-18 | 2011-08-25 | 住友化学株式会社 | 酸化物焼結体、酸化物混合体、それらの製造方法およびそれらを用いたターゲット |
JP2011222687A (ja) * | 2010-04-08 | 2011-11-04 | Tosoh Corp | 太陽電池 |
US9111663B2 (en) * | 2010-09-29 | 2015-08-18 | Tosoh Corporation | Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor |
US9885108B2 (en) * | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
KR101526157B1 (ko) * | 2014-12-08 | 2015-06-04 | 주식회사3차버너 | 업소용 대형 국솥 |
JP6776931B2 (ja) * | 2016-03-23 | 2020-10-28 | 三菱マテリアル株式会社 | 積層反射電極膜、積層反射電極パターン、積層反射電極パターンの製造方法 |
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US5236632A (en) * | 1989-08-10 | 1993-08-17 | Tosoh Corporation | Zinc oxide sintered body, and preparation process and use thereof |
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JPH10306367A (ja) | 1997-05-06 | 1998-11-17 | Sumitomo Metal Mining Co Ltd | スパッタリングターゲット用ZnO−Ga2O3系焼結体およびその製造方法 |
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JP3841388B2 (ja) | 1998-02-16 | 2006-11-01 | 日鉱金属株式会社 | 光ディスク用保護膜及び光ディスクの保護膜形成用スパッタリングターゲット |
JP3636914B2 (ja) | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット |
JPH11256320A (ja) | 1998-03-13 | 1999-09-21 | Sumitomo Metal Mining Co Ltd | ZnO系焼結体 |
JPH11322332A (ja) * | 1998-05-21 | 1999-11-24 | Sumitomo Metal Mining Co Ltd | ZnO系焼結体およびその製造方法 |
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JP2002075061A (ja) | 2000-08-30 | 2002-03-15 | Uchitsugu Minami | 透明導電膜 |
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EP1431414A1 (en) * | 2001-09-27 | 2004-06-23 | Idemitsu Kosan Co., Ltd. | Sputtering target and transparent electroconductive film |
CN100363531C (zh) * | 2005-06-21 | 2008-01-23 | 山东大学 | 一种镓掺杂氧化锌透明导电膜的制备方法 |
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