CN101901808B - Trench-type Schottky-barrier diode rectifier and preparation method - Google Patents
Trench-type Schottky-barrier diode rectifier and preparation method Download PDFInfo
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- CN101901808B CN101901808B CN2010102085881A CN201010208588A CN101901808B CN 101901808 B CN101901808 B CN 101901808B CN 2010102085881 A CN2010102085881 A CN 2010102085881A CN 201010208588 A CN201010208588 A CN 201010208588A CN 101901808 B CN101901808 B CN 101901808B
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- groove
- epitaxial loayer
- silicon
- schottky barrier
- barrier diode
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- 238000002360 preparation method Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims description 45
- 235000012239 silicon dioxide Nutrition 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 27
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 claims description 3
- 102000013275 Somatomedins Human genes 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010102085881A CN101901808B (en) | 2010-06-23 | 2010-06-23 | Trench-type Schottky-barrier diode rectifier and preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102085881A CN101901808B (en) | 2010-06-23 | 2010-06-23 | Trench-type Schottky-barrier diode rectifier and preparation method |
Publications (2)
Publication Number | Publication Date |
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CN101901808A CN101901808A (en) | 2010-12-01 |
CN101901808B true CN101901808B (en) | 2011-11-09 |
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CN2010102085881A Active CN101901808B (en) | 2010-06-23 | 2010-06-23 | Trench-type Schottky-barrier diode rectifier and preparation method |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035751A (en) * | 2012-11-23 | 2013-04-10 | 上海华虹Nec电子有限公司 | Schottky diode |
CN107785256A (en) * | 2016-08-31 | 2018-03-09 | 无锡华润上华科技有限公司 | Semiconductor devices and preparation method thereof |
CN106449774A (en) * | 2016-10-11 | 2017-02-22 | 扬州扬杰电子科技股份有限公司 | Groove-type barrier schottky structure for optimizing electric field on surface and manufacturing method of groove-type barrier schottky structure |
CN111883527B (en) * | 2020-07-10 | 2021-04-27 | 安徽安芯电子科技股份有限公司 | Groove type Schottky barrier chip for manufacturing large-size wafer |
CN117913147A (en) * | 2022-10-11 | 2024-04-19 | 华润微电子(重庆)有限公司 | Composite groove type Schottky diode device and manufacturing method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
CN1591798A (en) * | 2003-07-10 | 2005-03-09 | 国际整流器公司 | Process for forming thick oxides on si or sic for semiconductor devices |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61212060A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Schottky barrier diode |
CN201725794U (en) * | 2010-06-23 | 2011-01-26 | 苏州硅能半导体科技股份有限公司 | Groove type schottky barrier diode rectifying device |
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2010
- 2010-06-23 CN CN2010102085881A patent/CN101901808B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
CN1591798A (en) * | 2003-07-10 | 2005-03-09 | 国际整流器公司 | Process for forming thick oxides on si or sic for semiconductor devices |
Non-Patent Citations (1)
Title |
---|
JP昭61-212060A 1986.09.20 |
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Publication number | Publication date |
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CN101901808A (en) | 2010-12-01 |
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Effective date of registration: 20240205 Address after: No. 306, Building 2, No.1 Qingshan Road, High tech Zone, Suzhou City, Jiangsu Province, 215100 Patentee after: New Silicon Microelectronics (Suzhou) Co.,Ltd. Country or region after: China Address before: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee before: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region before: China Effective date of registration: 20240205 Address after: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee after: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region after: China Address before: Unit 2-B501, No. 328 Xinghu Street, Industrial Park, Suzhou City, Jiangsu Province, 215123 Patentee before: SUZHOU SILIKRON SEMICONDUCTOR TECHNOLOGY CO.,LTD. Country or region before: China |