CN101873125B - 一种复位电路 - Google Patents
一种复位电路 Download PDFInfo
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- CN101873125B CN101873125B CN2009100820758A CN200910082075A CN101873125B CN 101873125 B CN101873125 B CN 101873125B CN 2009100820758 A CN2009100820758 A CN 2009100820758A CN 200910082075 A CN200910082075 A CN 200910082075A CN 101873125 B CN101873125 B CN 101873125B
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- voltage
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- inverter
- reset circuit
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- 239000004065 semiconductor Substances 0.000 claims description 45
- 230000007306 turnover Effects 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000011946 reduction process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 17
- 230000007423 decrease Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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Abstract
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Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009100820758A CN101873125B (zh) | 2009-04-22 | 2009-04-22 | 一种复位电路 |
Applications Claiming Priority (1)
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CN2009100820758A CN101873125B (zh) | 2009-04-22 | 2009-04-22 | 一种复位电路 |
Publications (2)
Publication Number | Publication Date |
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CN101873125A CN101873125A (zh) | 2010-10-27 |
CN101873125B true CN101873125B (zh) | 2012-06-13 |
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CN2009100820758A Active CN101873125B (zh) | 2009-04-22 | 2009-04-22 | 一种复位电路 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102006039B (zh) * | 2010-12-14 | 2012-10-03 | 苏州华芯微电子股份有限公司 | 一种复位电路 |
CN102270979B (zh) * | 2011-04-12 | 2013-03-20 | 建荣集成电路科技(珠海)有限公司 | 一种上电复位电路 |
TWI545541B (zh) * | 2015-06-02 | 2016-08-11 | 瑞鼎科技股份有限公司 | 應用於顯示裝置之閘極驅動器的電源開啓重置電路 |
CN106059550A (zh) * | 2016-06-03 | 2016-10-26 | 乐视控股(北京)有限公司 | 一种***复位电路及电子设备 |
CN107342758B (zh) * | 2017-07-20 | 2020-11-27 | 苏州精诚智造智能科技有限公司 | 一种基于rc复位模块的闭环控制复位电路 |
CN109257035B (zh) * | 2018-08-30 | 2022-04-05 | 龙迅半导体(合肥)股份有限公司 | 一种上电复位电路 |
CN111510122A (zh) * | 2020-04-15 | 2020-08-07 | 华南理工大学 | 一种多电源***的上电复位装置 |
CN113746460A (zh) * | 2021-08-19 | 2021-12-03 | 北京中科胜芯科技有限公司 | 一种多电源上电复位电路 |
CN116700458B (zh) * | 2023-08-09 | 2024-01-26 | 深圳奥简科技有限公司 | 一种电压监测复位电路及电子设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1637945A (zh) * | 2003-12-30 | 2005-07-13 | 海力士半导体有限公司 | 半导体存储装置中的加电电路 |
CN101009485A (zh) * | 2006-01-05 | 2007-08-01 | 三星电子株式会社 | 半导体器件中的复位信号产生器 |
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2009
- 2009-04-22 CN CN2009100820758A patent/CN101873125B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1637945A (zh) * | 2003-12-30 | 2005-07-13 | 海力士半导体有限公司 | 半导体存储装置中的加电电路 |
CN101009485A (zh) * | 2006-01-05 | 2007-08-01 | 三星电子株式会社 | 半导体器件中的复位信号产生器 |
Non-Patent Citations (1)
Title |
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JP特开2006-74210A 2006.03.16 |
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Publication number | Publication date |
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CN101873125A (zh) | 2010-10-27 |
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Address after: 100084 room B301, research building, Tsinghua University, Beijing, Haidian District Applicant after: GIGADEVICE SEMICONDUCTOR Inc. Address before: 100084 room B301, research building, Tsinghua University, Beijing, Haidian District Applicant before: GigaDevice Semiconductor Inc. |
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Free format text: CORRECT: APPLICANT; FROM: BEIJING XINJI JIAYI, MICROELECTRONIC SCIENCE + TECH. CO., LTD. TO: GIGADEVICE SEMICONDUCTOR INC. |
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Owner name: BEIJING GIGADEVICE SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: BEIJING GIGADEVICE SEMICONDUCTOR INC. |
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CP03 | Change of name, title or address |
Address after: 100083 Beijing City, Haidian District Xueyuan Road No. 30, large industrial building A block 12 layer Patentee after: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Address before: 100084 room B301, research building, Tsinghua University, Beijing, Haidian District Patentee before: GigaDevice Semiconductor Inc. |
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CP03 | Change of name, title or address |
Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |