CN101866996B - LED large-area controllable surface coarsening and etching method based on laser - Google Patents
LED large-area controllable surface coarsening and etching method based on laser Download PDFInfo
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Abstract
The invention relates to an LED large-area controllable surface coarsening and etching method based on a laser, belonging to the technical field of an LED. The method utilizes semiconductor material for carrying out strong absorption generating gasification on high-power laser with the wavelength less than the band edge absorption wavelength of the semiconductor material, thus realizing surface coarsening for the semiconductor material on the surface of the LED. A high-speed galvanometer or a precise displacement platform is used for controlling the laser processing area or pattern, and can be used for controlling the laser power and the processing line width and depth of focus level adjustment. The LED large-area controllable surface coarsening and etching method can be applied to surface coarsening and etching of the GaAs-based LED and the GaN-based LED of various structures. The laser takes the wavelength less than the band edge absorption wavelength of the processed semiconductor material as reference. The method has the advantages of wide applicable material, rapid processing speed, large area, low cost, good coarsening effect, low damage for the semiconductor material, high controllability of system processing parameters and the like, can effectively solve the problem of p-GaN layer coarsening, and has great application potential in the production of the high-brightness LED.
Description
Technical field:
The present invention relates to a kind of LED large-area controllable surface coarsening and lithographic method, belong to light-emitting diode manufacturing technology field based on laser.
Background technology:
Be under the effort of many well-known research institutions of representative the fifties in last century at IBM Thomas J.Watson Research Center, is that the III-V family semiconductor of representative emerges rapidly in the semiconductor light emitting field with GaAs.Along with the appearance of metal oxide chemical vapor deposition (MOCVD) technology, make the semi-conductive growth of high-quality III-V family break through the technology potential barrier afterwards, the semiconductor light emitting diode device of various wavelength floods the market in succession.Because semiconductor light-emitting-diode has speciality such as theoretical efficiency height, life-span length, drag impact with respect to present luminescent device, worldwide be counted as illuminating device of new generation.But because the generally higher (GaAs:3.2 of the semi-conductive refractive index of III-V family, GaN:2.4), this is limited by the interface total reflection phenomenon with regard to the light that the light-emitting zone that causes LED sends when shining in the air through chip surface, have only the light of few part can shine device outside (GaAs is about 2.4%, and GaN is about 4%).The interface total reflection phenomenon causes the external quantum efficiency of LED low, is the main cause that restriction LED substitutes existing illuminating device.
People such as Nuese had delivered the method for utilizing the epoxy encapsulation led chip at J.Electrochem Soc.:Solid State Sci. in 1969, and the external quantum efficiency of ruddiness GaAs base LED has been improved 1-2 doubly.Between GaAs material and air, add one deck refractive index and be 1.5 epoxy resin and can effectively increase cirtical angle of total reflection degree, make more rays can shine LED device outside.But the method is limited for the raising of external quantum efficiency, and has introduced a bed boundary more and also can cause the interface Fresnel loss, and the radiation aging of resin material also can cause light extraction efficiency to descend simultaneously.
1993, thus people such as Schnitzer at first propose to utilize the method for etching that the semi-conducting material light output surface is carried out the method that alligatoring improves the external quantum efficiency of led chip at Appl.Phys.Lett., have obtained 50% light extraction efficiency.The principle that surface coarsening improves led chip light ejection efficiency is to utilize the concaveconvex structure of LED light output surface, the light scatter of total reflection angle is gone out or is guided out chip, can shine LED light from outside ratio thereby increase.After this, Windisch has reported that at periodicals such as IEEE Trans.Electron Dev. and Appl.Phys.Lett. similar method carries out alligatoring to the LED light output surface.Utilize the method for etching that the weak point that the LED light output surface carries out alligatoring is: (1) etching has very big destructiveness for the carrier transport properties of semi-conducting material, makes the electric property of LED obviously reduce; (2) etching apparatus purchase and use cost high unusually, make the cost of LED rise significantly; (3) utilize etching that pattern and size that the LED light output surface carries out alligatoring are had no idea to control and optimize.(4) process time longer, production efficiency is lower.
Up to the present, the chemical corrosion method of III-V family semi-conducting materials such as GaAs, GaP and GaN is very few.1998, Stocker published an article at Appl.Phys.Lett., had reported and had utilized hot KOH solution or hot H
3PO
4Successfully realize the corrosion of GaN material, LED has been carried out effective alligatoring, and obtained 50% light extraction efficiency.Utilize the method for chemical corrosion that the deficiency that the LED light output surface carries out alligatoring is: (1) is difficult to the speed and the degree of depth of accurately control corrosion, and this is by the latent defect decision of chemical method; (2) be subject to the influence of factors such as ambient temperature, be difficult to obtain the alligatoring led chip of high duplication; (3) structure that obtains of corrosion is single, is difficult to be optimized at the light extraction effect.(4) process time longer, production efficiency is lower.
In the epitaxial process of semi-conducting material, carry out certain design and regulation and control, also can reach the result who the LED light output surface is carried out alligatoring, as the patent No.: 200910061316, title: a kind of method that improves LED external quantum efficiency is described, the growth pattern of P type layer has adopted a kind of method of roughening of novelty in the LED epitaxial slice structure: improve the doping content of P type layer Mg, thereby reach the effect of epitaxial wafer surface roughening.Roughened layer can be any one deck in the P type composite bed, or multilayer, or the some zones of certain one deck.The design of the inventive method has not only guaranteed higher hole concentration but also coarse surface is provided, LED surface coarsening layer changes direction with the light that those satisfy the total reflection law, destroy the total reflection of light, be lifted out optical efficiency, thereby improve external quantum efficiency in LED inside.Because it is very big to obtain the p-GaN difficulty of high Mg doping content in epitaxial process, the method is difficult to be realized.And change the decline that epitaxial growth parameters can cause led chip electricity and optical property.The coarse surface roughness of utilizing the method to obtain is limited, is difficult to obtain desirable light ejection efficiency and improves.
The patent No.: 200910046834, title: can make the manufacture method of P-GaN laminar surface alligatoring of LED described, at first on Semiconductor substrate, grow n-GaN layer, quantum well layer, p-GaN layer, and the alligatoring GaN layer of non-doping successively, adopt the alligatoring GaN layer of ICP or the described non-doping of ion dry etching then so that the coarse surface shape of the alligatoring GaN layer of described non-doping is transferred to described p-GaN layer, thereby make the alligatoring of described p-GaN laminar surface.This invention is subject to the technical bottleneck of ICP etching, destroys the electric property of LED device, and too much ICP is etched with and may causes the chip electric leakage, and rate of finished products descends greatly.In addition, this kind method can improve the cost of led chip product greatly, and reason is to want extraneous growth one deck to be used for the intrinsic GaN layer of alligatoring in the epitaxial process, and Another reason is an ICP etching cost costliness, and extra etching must make the LED production cost improve.
The patent No.: 200910018772, title: utilize the PS spheres as template to make the method for light-emitting diode coarse surface.May further comprise the steps: (1) is the epitaxial growth epitaxial wafer routinely; (2) on epitaxially grown P type contact layer, lay the monofilm that one deck is closely arranged and formed by the PS ball; (3) chloride or the nitrate with tetraethyl orthosilicate, metal is precursor, and precursor, second alcohol and water are filled in the PS ball and the gap between the P type contact layer of monofilm after mixing, and room temperature leaves standstill and heating and decomposition is corresponding oxide; (4) epitaxial wafer is placed carrene, get rid of the PS ball with the carrene dissolving, the oxide that forms in the gap between PS ball and P type contact layer is retained on the P type contact layer by bowl-shape periodic arrangement structure; (5) make mask with the oxide that forms, dry etching P type contact layer forms coarse surface; (6) erode residual oxide.This invention can obtain the alligatoring L E D surface of etching cycle and depth controlled.The design that the method utilizes the PS microballoon alligatoring to be carried out on the p-GaN surface by the ICP etching as template is loaded down with trivial details unusually, this process is introduced a series of corrosion and chemical process, and used this expensive auxiliary consumptive material of PS microballoon, make the led chip cost significantly improve, be not suitable for combining with the LED production technology.And the method does not also avoid the ICP etching technics for the destruction of the electric property of LED device and the raising of cost.
The patent No.: 200910018771, title: a kind of method of utilizing ITO particle mask alligatoring red light-emitting diode.Utilize the method for ITO particle mask alligatoring red light-emitting diode, may further comprise the steps: the method that (1) utilizes metal organic chemical vapor deposition routinely epitaxial growth N type contact layer, Multiple Quantum Well active area and P type contact layer successively on substrate, substrate is the GaAs material; (2) ito thin film of usefulness electron beam transpiration one bed thickness 260nm on epitaxially grown P type contact layer; (3) epitaxial wafer that will be coated with ITO immersed in the concentrated hydrochloric acid 1 minute, eroded part ITO, and that residual is granular ITO; (4) make mask with residual ITO particle, dry etching P type contact layer forms coarse surface; (5) erode residual ITO with concentrated hydrochloric acid.The method needs twice evaporation ITO current extending, and the normal LED technology of cost obviously improves.In addition, also do not avoid the destruction of ICP etching technics for the electric property of LED device.And the method need be used concentrated hydrochloric acid, because concentrated hydrochloric acid has severe corrosive and strong volatility, may cause certain infringement to other precision equipments and operating personnel.
The patent No.: 200710199280, title: the processing method of GaN basis light emitting diode surface coarsing.The implementation procedure of this method is: (1) is under 600 ℃～750 ℃ cryogenic conditions, P type GaN cap layer in the growing GaN based LED epitaxial slice, the dislocation of this cap layer is propagated along the direction perpendicular to epitaxial surface, do not bend, thereby the dislocation density of this cap layer is increased and do not influence the photoelectric characteristic of device; (2) in the KOH corrosion LED epitaxial slice of corrosion temperature of setting and usefulness fusion under the time, highdensity dislocation perpendicular to epitaxial surface is corroded by selectivity in the P type GaN layer, forms the etch pit of intensive regular shape at device surface.The method is had relatively high expectations for the epitaxial growth of semi-conducting material, is difficult for realizing, the control difficulty is very big.
In sum, that above technology, patent all do not possess is highly controlled, low-cost, be easy to combine with existing LED technology, nonhazardous, do not have the characteristics of destruction for the led chip electric property, does not relate to provided by the invention based on the high light ejection efficiency of laser, high controllability, low cost, large tracts of land, multiple pattern, nonhazardous, to the undamaged LED method for coarsening surface of led chip.
Summary of the invention
At the deficiencies in the prior art, the invention provides a kind of LED large-area controllable surface coarsening and lithographic method based on laser.
A kind of LED large-area controllable surface coarsening and lithographic method based on laser, alligatoring and lithographic method are as follows:
(1) laser is selected: optical maser wavelength is less than epitaxial wafer material band edge absorbing wavelength to be processed; Laser power density is greater than the threshold power density of epitaxial wafer material gasification to be processed, and for GaN base, GaAs base LED epitaxial wafer, power density is greater than 10
12W/m
2For the GaN sill, select 355nm laser for use, threshold power is 300mW; For the GaAs sill, select 532nm laser for use, threshold power is 250mW;
(2) laser beam energy profile adjustment: the adjustment light beam shaping module is regulated light spot energy and is distributed as Gaussian Profile or tack distribution, realizes that the alligatoring sidewall is inclination or steep;
(3) the laser beam focus level is regulated: by regulating the height of focus module or sample, regulate the focus level of laser beam at sample surfaces, realize the control of alligatoring live width; If use the lens focus of focal length as 100mm, the minimum process live width is 1 micron; If will obtain wideer processing live width,, sample surfaces is in owes burnt state realization then by the adjusting height of specimen;
(4) adjusting of working depth: control the power density of laser by the input power of regulating laser, or regulate the number of times of processing, realize the adjusting of the alligatoring degree of depth; The alligatoring depth bounds that can realize is that 10nm is to unlimited dark; When blue light GaN epitaxial loayer was carried out alligatoring, as if 10 microns of laser output power 400mW, spot diameters, the alligatoring degree of depth of time processing was 150nm; When GaAs base epitaxial loayer was carried out alligatoring, under the condition of 10 microns of 400mW laser powers, spot diameter, an alligatoring degree of depth was 250nm;
(5) realization of different graphics processings: it is best that the alligatoring figure is drawn effect with the two-dimension netted figure in micron order cycle or donut figure light; The control of LED alligatoring pattern realizes by regulating high-speed vibrating mirror or high accuracy electricity driving displacement platform, and the alligatoring figure that designs is imported the Control Software of high-speed vibrating mirror or high accuracy electricity driving displacement platform, and system can carry out alligatoring processing according to the figure that imports; The alligatoring figure minimum resolution that realizes by high-speed vibrating mirror is 10 microns, uses high accuracy electricity driving displacement platform minimum resolution and can reach 1 micron;
(6) clean: after machining, use watery hydrochloric acid to clean the residual Ga of sample surfaces in ultrasonic 1-2 minute under the room temperature
2O
3
Described alligatoring and lithographic method are applicable to that all GaAs bases of alligatoring etching, GaN base ternary, four-tuple divide alligatoring and etching red, green, yellow, each layer of blue led chip epitaxial structure.
Described alligatoring and lithographic method are applicable to the alligatoring and the etching of the led chip and the epitaxial wafer of formal dress, upside-down mounting, vertical process, thin-film technique.
A kind of claim 1 that realizes is described based on the LED large-area controllable surface coarsening of laser and the device of lithographic method, is made up of the computer of power supply module, laser module, light beam shaping module, light beam focus module, high-speed vibrating mirror or high accuracy electricity driving displacement platform, lifting sample stage and control high-speed vibrating mirror or high accuracy electricity driving displacement platform; Wherein light beam shaping module and the position of light beam focus module in light path can exchange; High-speed vibrating mirror is connected with computer with high accuracy electricity driving displacement platform.
Superiority of the present invention
1) the LED surface coarsening lithographic technique that the present invention is based on laser is selected the etching processing of suitable laser module applicable to all semi-conducting materials, character to machined material requires extremely low, can be used for alligatoring etching GaAs base, GaP base, GaN base ternary, quaternary component LED just, flip-chip, effective semi-conducting material of this extremely difficult corrosion of alligatoring p-GaN particularly, promote the light extraction efficiency of blue-ray LED greatly, simplified production technology.
2) it is cheap to the present invention is based on the LED surface coarsening lithographic technique equipment and the use cost of laser.At first avoid using traditional lithographic method of this costliness of ICP, secondly the method has the characteristics of time processing, need not technologies such as exposure, mask and can process multiple figure.
3) owing to avoided use ICP etching, for the electrical properties not damaged of led chip, and laser irradiation can effectively activate the Mg ion among the p-GaN, improves the conductive capability of p-GaN, thereby makes the electric current injection efficiency of LED device be improved.
4) process velocity is fast.With period pitch is that 20 microns donut figure is an example, 2 inches GaN bases of processing a slice forward LED epitaxial wafer only need be about 15-20 second.Exceed the process velocity several times of all coarsening techniques at present.
5) working (finishing) area is big.Parameter or adjusting light path by changing Control Software can easily realize the processing of large scale sample.
6) the alligatoring graphics processing is versatile and flexible.Control Software by high-speed vibrating mirror or high accuracy electricity driving displacement sample stage can realize the various alligatoring etching figures of design voluntarily.
7) etching depth controllability height.Because the power output of laser module can be carried out High Accuracy Control by the power output of regulating power supply, so the control precision of the etching depth of sample can reach below the 10nm.
8) processing line width, the resolution height.The etching live width of the method can be controlled by the focus level of regulating laser beam, laser beam can be focused on by the focusing technology minimum in 1 micron the scope, and on behalf of the etching resolution of the method, this just to reach 1 micron precision.
9) alligatoring is effective.Led chip light extraction efficiency through the method alligatoring can double above.
Description of drawings
Fig. 1 is based on the LED large-area controllable surface coarsening of laser and etching collocation high-speed vibrating mirror configuration schematic diagram.
Fig. 2 is based on the LED large-area controllable surface coarsening of laser and etching collocation high accuracy electricity driving displacement platform configuration schematic diagram.
Wherein, 1, laser module, 2, the laser beam shaping module, 3, the laser beam focus module, 4, speculum, 5, the high-speed vibrating mirror module, 6, LED epitaxial wafer to be processed, 7, the lifting sample stage, 8, high accuracy electricity driving displacement platform.
Embodiment
Embodiment 1:
With 2 inches GaN base forward LED epitaxial wafers is that example illustrates implementation method of the present invention:
(1) GaN base forward LED epitaxial wafer is followed successively by sapphire, carborundum or silicon substrate, resilient coating GaN, intrinsic GaN layer, n-GaN limiting layer, the active luminous zone of Multiple Quantum Well, p-GaN limiting layer from the bottom to the structure at top.
(2) carry out alligatoring processing at the p-GaN limiting layer, the thickness of p-GaN limiting layer is about 200nm.
(3) open ultraviolet 355nm laser, make its laser output be in holding state.
(4) regulating the laser beam shaping module distributes to obtain the required beam energy of processing.
(5) GaN base forward LED epitaxial wafer is fixed on the center of lifting sample stage, regulates the lifting sample stage and make ultraviolet 355nm laser beam be positioned at the center of epitaxial wafer, and regulate the sample stage height and guarantee that laser beam rationally focuses on the epitaxial wafer surface.
(6) required alligatoring graphics processing is imported to the high-speed vibrating mirror Control Software, for example ectonexine is 20 microns donut structure at interval, and the processing duty ratio is 50%, and working (finishing) area is for covering whole 2 inches GaN base forward LED epitaxial wafers.
(7) control the power output of ultraviolet 355nm laser module by the power output of regulating power supply module, thereby realize the degree of depth of control alligatoring processing.Because the thickness of p-GaN limiting layer is 200nm, for the hole injection effect of not destroying the active luminous zone of Multiple Quantum Well and guaranteeing p-GaN, working depth is less than 150nm, and then the power of laser should be controlled at 300mW.
(8) order that begins to process in the computer terminal input of controlling high-speed vibrating mirror, then the output of ultraviolet 355nm laser module reaches the 300mW of setting, and high-speed vibrating mirror begins to begin to process according to the graphics processing of input, and process velocity is 3cm
2/ S, 2 inches GaN bases of full wafer forward LED epitaxial wafer completion of processing needs 15-20 second.
(9) working concentration is that the Ga on epitaxial wafer surface was removed in 20% watery hydrochloric acid ultrasonic cleaning in 2 minutes
2O
3Residual, and use acetone, ethanol etc. to clean epitaxial wafer.
(10) 2 inches GaN base forward LED epitaxial wafers after the alligatoring are proceeded normal electrode manufacture craft.
Embodiment 2:
With 2 inches GaN base vertical process LED epitaxial wafers is that example illustrates implementation method of the present invention, and the 4th, 5,9,10 steps are identical with embodiment 1, and difference is:
(1) structure of GaN base vertical process LED epitaxial wafer from the bottom to the top is followed successively by silicon substrate, p-GaN limiting layer, the active luminous zone of Multiple Quantum Well, n-GaN limiting layer, intrinsic GaN.
(2) carry out alligatoring processing at intrinsic GaN layer, the thickness of intrinsic GaN layer is about 1.5 microns.
(3) open ultraviolet 355nm laser, make its laser output be in holding state.
(6) required alligatoring graphics processing is imported to high accuracy electricity driving displacement platform Control Software, for example the cycle is 15 microns the structure of vertical stripes in length and breadth, and the processing duty ratio is 50%, and working (finishing) area is for covering whole 2 inches GaN base vertical process LED epitaxial wafers.
(7) control the power output of ultraviolet 355nm laser module by the power output of regulating power supply module, thereby realize the degree of depth of control alligatoring processing.Because the thickness of intrinsic GaN layer is 1.5 microns, for the hole injection effect of not destroying the active luminous zone of Multiple Quantum Well and guaranteeing n-GaN, working depth is less than 1.2 microns, and then the power of laser should be controlled at 1W.
(8) order that begins to process in the computer terminal input of controlling high accuracy electricity driving displacement platform, then the output of ultraviolet 355nm laser module reaches the 1.5W of setting, and high-speed vibrating mirror begins to begin to process according to the graphics processing of input, and process velocity is 1cm
2/ S, 2 inches GaN bases of full wafer vertical process LED epitaxial wafer completion of processing needs 30-45 second.
Embodiment 3:
With 2 inches GaAs red-light LED epitaxial wafers is that example illustrates implementation method of the present invention, and the 4th, 5,9,10 steps are identical with embodiment 1, and difference is:
(1) GaAs red-light LED epitaxial wafer is followed successively by the GaAs substrate, n-GaAs limiting layer, the active luminous zone of Multiple Quantum Well, p-GaAs limiting layer, GaP Window layer from the bottom to the structure at top.
(2) carry out alligatoring processing in the GaP Window layer, the thickness of GaP Window layer is about 8 microns.
(3) open the 532nm laser, make its laser output be in holding state.
(6) required alligatoring graphics processing is imported to the high-speed vibrating mirror Control Software, for example ectonexine is 20 microns donut structure at interval, and the processing duty ratio is 50%, and working (finishing) area is for covering whole 2 inches GaAs red-light LED epitaxial wafers.
(7) control the power output of 532nm laser module by the power output of regulating power supply module, thereby realize the degree of depth of control alligatoring processing.Because the thickness of GaP Window layer is 8 microns, for the hole injection effect of not destroying the active luminous zone of Multiple Quantum Well and guaranteeing p-GaAs, working depth is less than 2 microns, and then the power of 532nm laser should be controlled at 2W.
(8) order that begins to process in the computer terminal input of controlling high-speed vibrating mirror, then the output of 532nm laser module reaches the 2W of setting, and high-speed vibrating mirror begins to begin to process according to the graphics processing of input, and process velocity is 3cm
2/ S, 2 inches GaAs red-light LEDs of full wafer epitaxial wafer completion of processing needs 15-20 second.
Embodiment 4:
With 2 inches AlGaInP Huangs, green light LED epitaxial wafer is that example illustrates implementation method of the present invention, and the 4th, 5,9,10 steps are identical with embodiment 1, and difference is:
(1) AlGaInP Huang, green light LED epitaxial wafer are followed successively by the GaAs substrate, n-GaAs limiting layer, the active luminous zone of Multiple Quantum Well, p-AlGaAs limiting layer, GaP Window layer from the bottom to the structure at top.
(2) carry out alligatoring processing in the GaP Window layer, the thickness of GaP Window layer is about 8 microns.
(3) open the 532nm laser, make its laser output be in holding state.
(6) required alligatoring graphics processing is imported to the high-speed vibrating mirror Control Software, for example ectonexine is 20 microns donut structure at interval, and the processing duty ratio is 50%, and working (finishing) area is for covering whole 2 inches AlGaInP Huangs, green light LED epitaxial wafer.
(7) control the power output of 532nm laser module by the power output of regulating power supply module, thereby realize the degree of depth of control alligatoring processing.Because the thickness of GaP Window layer is 8 microns, for the hole injection effect of not destroying the active luminous zone of Multiple Quantum Well and guaranteeing p-AlGaAs, working depth is less than 2 microns, and then the power of 532nm laser should be controlled at 2W.
(8) order that begins to process in the computer terminal input of controlling high-speed vibrating mirror, then the output of 532nm laser module reaches the 2W of setting, and high-speed vibrating mirror begins to begin to process according to the graphics processing of input, and process velocity is 3cm
2/ S, 2 inches AlGaInP Huangs of full wafer, green light LED epitaxial wafer completion of processing need 15-20 second.
Claims (5)
1. LED large-area controllable surface coarsening and lithographic method based on a laser is characterized in that alligatoring and lithographic method are as follows:
(1) laser is selected: optical maser wavelength is less than epitaxial wafer material band edge absorbing wavelength to be processed; Laser power density is greater than the threshold power density of epitaxial wafer material gasification to be processed;
(2) laser beam energy profile adjustment: the adjustment light beam shaping module is regulated light spot energy and is distributed as Gaussian Profile or tack distribution, realizes that the alligatoring sidewall is inclination or steep;
(3) the laser beam focus level is regulated: by regulating the height of focus module or sample, regulate the focus level of laser beam at sample surfaces, realize the control of alligatoring live width; (4) adjusting of working depth: control the power density of laser by the input power of regulating laser, or regulate the number of times of processing, realize the adjusting of the alligatoring degree of depth; The alligatoring depth bounds that can realize is that 10nm is to unlimited dark;
(5) realization of different graphics processings: it is best that the alligatoring figure is drawn effect with the two-dimension netted figure in micron order cycle or donut figure light; The control of LED alligatoring pattern realizes by regulating high-speed vibrating mirror or high accuracy electricity driving displacement platform, and the alligatoring figure that designs is imported the Control Software of high-speed vibrating mirror or high accuracy electricity driving displacement platform, and system can carry out alligatoring processing according to the figure that imports;
(6) clean: after machining, use watery hydrochloric acid to clean the residual Ga of sample surfaces in ultrasonic 1-2 minute under the room temperature
2O
3
2. LED large-area controllable surface coarsening and lithographic method based on laser as claimed in claim 1, it is characterized in that, described alligatoring and lithographic method are applicable to that all GaAs bases, GaN base ternary, four-tuple divide alligatoring and etching red, green, yellow, each layer of blue led chip epitaxial structure.
3. LED large-area controllable surface coarsening and lithographic method based on laser as claimed in claim 1, it is characterized in that, described alligatoring and lithographic method are applicable to the alligatoring and the etching of the led chip and the epitaxial wafer of formal dress, upside-down mounting, vertical process, thin-film technique.
4. realize that claim 1 is described based on the LED large-area controllable surface coarsening of laser and the device of lithographic method for one kind, it is characterized in that: the computer by power supply module, laser module, light beam shaping module, light beam focus module, high-speed vibrating mirror or high accuracy electricity driving displacement platform, lifting sample stage and control high-speed vibrating mirror or high accuracy electricity driving displacement platform is formed; Wherein light beam shaping module and the position of light beam focus module in light path can exchange; High-speed vibrating mirror is connected with computer with high accuracy electricity driving displacement platform.
5. LED large-area controllable surface coarsening and lithographic method based on laser as claimed in claim 1, it is characterized in that, the described laser power density of step (1) is meant greater than the threshold power density of epitaxial wafer material gasification to be processed: for GaN base, GaAs base LED epitaxial wafer, power density is greater than 10
12W/m
2For the GaN sill, select 355nm laser for use, threshold power is 300mW; For the GaAs sill, select 532nm laser for use, threshold power is 250mW.
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| CN103586580A (en) * | 2013-11-15 | 2014-02-19 | 王晓峰 | Laser annealing device and laser annealing method used for P type GaN activation |
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| CN109033587B (en) * | 2018-07-13 | 2023-04-07 | 闽南师范大学 | LED chip optical characteristic prediction method and system |
| CN109507006B (en) * | 2018-12-20 | 2021-09-28 | 中科芯电半导体科技（北京）有限公司 | Layer-by-layer etching method applied to photoluminescence test of VCSEL structure epitaxial wafer and VCSEL structure epitaxial wafer |
| CN111364019A (en) * | 2020-04-13 | 2020-07-03 | 艾华(无锡)半导体科技有限公司 | Graphical epitaxial growth equipment structure |
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| JP5719493B2 (en) * | 2003-12-09 | 2015-05-20 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Highly efficient (B, Al, Ga, In) N-based light emitting diode by surface roughening |
| KR100649494B1 (en) * | 2004-08-17 | 2006-11-24 | 삼성전기주식회사 | Fabrication method of light emitting diode incorporating laser surface treatment of substrate and light emitting diode fabricated thereby |
| CN100463102C (en) * | 2004-11-23 | 2009-02-18 | 北京大学 | Large-area and low-power laser stripping method for GaN-base epitaxial layer |
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