CN111364019A - Graphical epitaxial growth equipment structure - Google Patents
Graphical epitaxial growth equipment structure Download PDFInfo
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- CN111364019A CN111364019A CN202010288319.4A CN202010288319A CN111364019A CN 111364019 A CN111364019 A CN 111364019A CN 202010288319 A CN202010288319 A CN 202010288319A CN 111364019 A CN111364019 A CN 111364019A
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- 238000010438 heat treatment Methods 0.000 claims description 27
- 239000002243 precursor Substances 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 235000013024 sodium fluoride Nutrition 0.000 claims description 3
- 239000011775 sodium fluoride Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 239000002346 layers by function Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 5
- 230000003760 hair shine Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 9
- 238000007639 printing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010146 3D printing Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Composite Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of preparation of graphical functional layers and discloses an equipment structure for graphical epitaxial growth. This equipment structure of graphical epitaxial growth, through setting up the vacuum chamber, arrange the vacuum chamber in with the wafer, be favorable to the homogeneity of function rete, simultaneously very big pollution abatement improves the yield, laser generator passes through the laser window and shines to the vacuum chamber is inside, the laser window allows laser to pass through and shines the surface at the wafer, the laser that laser generator produced passes through optical focusing system and forms the nanometer yardstick facula, make the device compare with the 3D printer and can print nanometer pattern, can use in integrated circuit preparation.
Description
Technical Field
The invention relates to the technical field of preparation of graphical functional layers, in particular to a graphical epitaxial growth equipment structure.
Background
An integrated circuit is a microelectronic device or component. The elements such as transistor, resistor, capacitor and inductor, etc. required in a circuit and wiring are interconnected together by a certain process, and are made on a small or several small semiconductor wafers or medium substrates, and then are packaged in a tube shell to form a miniature structure with required circuit functions, wherein all the elements are structurally integrated into a whole, so that the electronic element is greatly developed towards microminiaturization, low power consumption, intellectualization and high reliability.
At present, the existing 3D printer is a device for constructing an object by using a powder sol as a raw material in a layer-by-layer printing manner, and can be manufactured as small as a tooth and as large as a building facility, however, in the aspect of semiconductor integrated circuit manufacturing, the patterning size is reduced to a nanometer level, 3D printing cannot be performed, and a nanometer-scale printing device is not blank, so that the patterning functional layer needs to be improved.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a device structure for patterned epitaxial growth, which has the advantages of being capable of printing nano-scale patterns, being applied to integrated circuit preparation and directly printing a patterned functional layer, and solves the problems that the conventional 3D printer is a device for constructing an object in a layer-by-layer printing mode by using powder sol as a raw material, the size is as small as that of a tooth and the size can be manufactured as large as that of a building facility, but the patterned size is reduced to the nano-scale in the aspect of semiconductor integrated circuit manufacturing, 3D printing cannot be performed, and the nano-scale printing device is not blank, so that the patterned functional layer needs to be improved.
The invention provides the following technical scheme: an equipment structure for graphical epitaxial growth comprises a vacuum chamber, wherein one end of the vacuum chamber is provided with an air supply pipe, the air supply pipe is fixedly connected with the vacuum chamber, one end of the air supply pipe, which is far away from the vacuum chamber, is provided with a vacuum pump, the vacuum pump is fixedly connected with the air supply pipe, the outer side of the vacuum chamber is provided with a laser window, the laser window is fixedly connected with the vacuum chamber, the upper right side of the vacuum chamber is provided with an operating panel, the operating panel is fixedly connected with the vacuum chamber, the bottom end in the vacuum chamber is provided with a heating chamber, the heating chamber is fixedly connected with the vacuum chamber, the upper surface of the heating chamber is provided with a heating table top, the heating table top is fixedly connected with the heating chamber, the upper surface of the heating table top is provided with a, the vacuum chamber inner wall is provided with the condensing lens, just the condensing lens with vacuum chamber fixed connection.
Preferably, the vacuum degree in the vacuum chamber can be regulated and controlled from time to time, and the regulation and control range is from zero point to ten thousand Pa.
Preferably, a high-purity inert gas or a reducing gas is arranged in the vacuum chamber, the inert gas is nitrogen or argon, and the reducing gas is hydrogen.
Preferably, a precursor is arranged in the gas supply pipe, and the precursor is one or two or more gaseous chemicals.
Preferably, when the precursor is two or more chemicals, the precursor may be introduced into the vacuum chamber simultaneously or alternately as required.
Preferably, the laser window is arranged between the wafer and the galvanometer, the laser window is made of high-purity quartz or glass or quartz crystal or sodium fluoride crystal and the like, and quartz glass is preferred.
Compared with the prior art, the invention has the following beneficial effects:
1. this equipment structure of graphical epitaxial growth, through setting up the vacuum chamber, arrange the vacuum chamber in with the wafer, be favorable to the homogeneity of function rete, simultaneously very big pollution abatement improves the yield, laser generator passes through the laser window and shines to the vacuum chamber is inside, the laser window allows laser to pass through and shines the surface at the wafer, the laser that laser generator produced passes through the optics focus system and forms the nanometer yardstick facula, make the device compare with the 3D printer and can print nanometer pattern, can use in integrated circuit preparation, consequently, the practicality of this equipment structure of graphical epitaxial growth has been increased.
2. According to the equipment structure for the patterned epitaxial growth, the vibrating mirror system is arranged to complete pattern scanning under the drive of a computer program, and compared with an integrated circuit equipment photoetching machine, the equipment structure can directly print a patterned functional layer, so that the cost and the yield potential are huge, and the practicability of the equipment structure for the patterned epitaxial growth is improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the internal structure of a vacuum chamber according to the present invention;
fig. 3 is a schematic structural diagram of the working system of the present invention.
In the figure: 1. an operation panel; 2. a vacuum pump; 3. a gas supply pipe; 4. a vacuum chamber; 5. a laser window; 6. a heating chamber; 7. heating the table top; 8. a condenser lens; 9. and (5) a wafer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, an apparatus structure for patterned epitaxial growth includes a vacuum chamber 4, the vacuum degree inside the vacuum chamber 4 can be adjusted and controlled from zero to ten thousand pa, the inside of the vacuum chamber 4 is provided with a high purity inert gas or a reducing gas, the inert gas is nitrogen or argon, the reducing gas is hydrogen, one end of the vacuum chamber 4 is provided with an air supply pipe 3, the air supply pipe 3 is fixedly connected with the vacuum chamber 4, the air supply pipe 3 is internally provided with a precursor, the precursor is one or two or more gaseous chemicals, when the precursor is more than two chemicals, the precursor can be introduced into the vacuum chamber 4 simultaneously or alternatively as required, one end of the air supply pipe 3, which is far away from the vacuum chamber 4, is provided with a vacuum pump 2, the vacuum pump 2 is fixedly connected with the air supply pipe 3, the outside of the vacuum chamber 4 is provided with a laser window 5, and the laser window 5, the laser window 5 is arranged between the wafer 9 and the vibrating mirror, the laser window 5 is made of high-purity quartz or glass or quartz crystal or sodium fluoride crystal and the like, preferably quartz glass, the operation panel 1 is arranged on the upper right of the vacuum chamber 4 and is fixedly connected with the vacuum chamber 4, the heating chamber 6 is arranged at the bottom end inside the vacuum chamber 4, the heating chamber 6 is fixedly connected with the vacuum chamber 4, the heating table top 7 is arranged on the upper surface of the heating chamber 6, the heating table top 7 is fixedly connected with the heating chamber 6, the wafer 9 is arranged on the upper surface of the heating table top 7 and is fixedly connected with the heating table top 7, the condenser 8 is arranged on the inner side wall of the vacuum chamber 4, and the condenser 8 is fixedly connected with.
During operation, the wafer 9 is placed on the upper surface of the heating table 7, the heating table 7 is fixed inside the vacuum chamber 4, the vacuum chamber 4 is connected with the vacuum pump 2 through the air supply pipe 3, the air supply pipe 3 inside the vacuum chamber 4 provides a precursor, laser is allowed to pass through and irradiate on the surface of the wafer 9 through the laser window 5, the laser system comprises a human-computer interface or a computer and an operation panel 1, a vibrating mirror system, an optical focusing system and a laser generator, laser generated by the laser generator forms a nanoscale light spot through the optical focusing system, and the vibrating mirror system completes graphic scanning under the drive of a computer program.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A patterned epitaxial growth apparatus structure comprising a vacuum chamber (4), characterized in that: an air supply pipe (3) is arranged at one end of the vacuum chamber (4), the air supply pipe (3) is fixedly connected with the vacuum chamber (4), a vacuum pump (2) is arranged at one end, far away from the vacuum chamber (4), of the air supply pipe (3), the vacuum pump (2) is fixedly connected with the air supply pipe (3), a laser window (5) is arranged on the outer side of the vacuum chamber (4), the laser window (5) is fixedly connected with the vacuum chamber (4), an operation panel (1) is arranged on the upper right side of the vacuum chamber (4), the operation panel (1) is fixedly connected with the vacuum chamber (4), a heating chamber (6) is arranged at the bottom end inside the vacuum chamber (4), the heating chamber (6) is fixedly connected with the vacuum chamber (4), and a heating table board (7) is arranged on the upper surface of the heating chamber (6), and the heating table board (7) is fixedly connected with the heating chamber (6), the upper surface of the heating table board (7) is provided with a wafer (9), the wafer (9) is fixedly connected with the heating table board (7), the inner side wall of the vacuum chamber (4) is provided with a condenser lens (8), and the condenser lens (8) is fixedly connected with the vacuum chamber (4).
2. A patterned epitaxial growth device structure according to claim 1, characterized in that: the vacuum degree in the vacuum chamber (4) can be regulated and controlled at any time, and the regulation and control range is from zero to ten thousand Pa.
3. A patterned epitaxial growth device structure according to claim 1, characterized in that: the inside of vacuum chamber (4) is provided with high-purity inert gas or reducing gas, inert gas is nitrogen or argon, reducing gas is hydrogen.
4. A patterned epitaxial growth device structure according to claim 1, characterized in that: a precursor is arranged in the gas supply pipe (3), and the precursor is one or two or more gaseous chemicals.
5. A patterned epitaxial growth device structure according to claim 4, characterized in that: when the driver is more than two chemicals, the driver can be simultaneously or alternatively introduced into the vacuum chamber (4) according to requirements.
6. A patterned epitaxial growth device structure according to claim 1, characterized in that: the laser window (5) is arranged between the wafer (9) and the vibrating mirror, the material of the laser window (5) is high-purity quartz or glass or quartz crystal or sodium fluoride crystal and the like, and preferably quartz glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010288319.4A CN111364019A (en) | 2020-04-13 | 2020-04-13 | Graphical epitaxial growth equipment structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010288319.4A CN111364019A (en) | 2020-04-13 | 2020-04-13 | Graphical epitaxial growth equipment structure |
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| CN111364019A true CN111364019A (en) | 2020-07-03 |
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| CN202010288319.4A Pending CN111364019A (en) | 2020-04-13 | 2020-04-13 | Graphical epitaxial growth equipment structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113099620A (en) * | 2021-03-29 | 2021-07-09 | 华南理工大学 | Method for preparing metal circuit on glass by utilizing laser plasma sputtering |
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| CN101866996A (en) * | 2010-05-21 | 2010-10-20 | 山东大学 | LED large-area controllable surface coarsening and etching method based on laser |
| CN102684072A (en) * | 2012-05-30 | 2012-09-19 | 北京工业大学 | Hybrid integrated laser and preparation method thereof |
| CN102938369A (en) * | 2012-11-23 | 2013-02-20 | 清华大学 | Epitaxial growth pretreatment method and epitaxial growth pretreatment process chamber |
| CN105821472A (en) * | 2016-04-25 | 2016-08-03 | 武汉大学 | Femtosecond-laser-assisted semiconductor material epitaxial growth method and device |
| CN106057644A (en) * | 2016-06-07 | 2016-10-26 | 中国船舶重工集团公司第七二五研究所 | Method for directly writing graphene pattern on nonmetal surface by laser |
| CN110265493A (en) * | 2019-06-13 | 2019-09-20 | 深圳市科创数字显示技术有限公司 | A kind of solar battery and preparation method thereof with patterning PDMS structure |
| CN212476874U (en) * | 2020-04-13 | 2021-02-05 | 艾华(无锡)半导体科技有限公司 | Graphical epitaxial growth equipment structure |
-
2020
- 2020-04-13 CN CN202010288319.4A patent/CN111364019A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866996A (en) * | 2010-05-21 | 2010-10-20 | 山东大学 | LED large-area controllable surface coarsening and etching method based on laser |
| CN102684072A (en) * | 2012-05-30 | 2012-09-19 | 北京工业大学 | Hybrid integrated laser and preparation method thereof |
| CN102938369A (en) * | 2012-11-23 | 2013-02-20 | 清华大学 | Epitaxial growth pretreatment method and epitaxial growth pretreatment process chamber |
| CN105821472A (en) * | 2016-04-25 | 2016-08-03 | 武汉大学 | Femtosecond-laser-assisted semiconductor material epitaxial growth method and device |
| CN106057644A (en) * | 2016-06-07 | 2016-10-26 | 中国船舶重工集团公司第七二五研究所 | Method for directly writing graphene pattern on nonmetal surface by laser |
| CN110265493A (en) * | 2019-06-13 | 2019-09-20 | 深圳市科创数字显示技术有限公司 | A kind of solar battery and preparation method thereof with patterning PDMS structure |
| CN212476874U (en) * | 2020-04-13 | 2021-02-05 | 艾华(无锡)半导体科技有限公司 | Graphical epitaxial growth equipment structure |
Non-Patent Citations (1)
| Title |
|---|
| 王敬义主编: "《薄膜生长理论》", 30 November 1993, 华中理工大学出版社, pages: 229 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113099620A (en) * | 2021-03-29 | 2021-07-09 | 华南理工大学 | Method for preparing metal circuit on glass by utilizing laser plasma sputtering |
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