CN111916415A - SiC heat sink based on laser processing and preparation method thereof - Google Patents
SiC heat sink based on laser processing and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
Abstract
The invention discloses a SiC heat sink based on laser processing and a preparation method thereof, wherein the SiC heat sink sequentially comprises a SiC layer and SiO from the bottom to the top2‑SiO2A bonding layer, and a semiconductor crystal layer, the SiO2‑SiO2The bonding layer is made of first SiO2Layer and second SiO2Layer bonding to obtain the second SiO2Layer is located on the first SiO2Above the layer, the first SiO2Grooves are obtained on the layer and the SiC layer by a laser processing method. The groove in the SiC heat sink disclosed by the invention forms an air channel, so that the heat dissipation capability of the chip during working can be effectively improved, and the preparation method is simple and low in cost.
Description
Technical Field
The invention belongs to the technical field of semiconductor device manufacturing, and particularly relates to a SiC heat sink based on laser processing and a preparation method thereof.
Background
Silicon carbide (SiC) has a large forbidden band width (3.23 ev) and a high breakdown electric field (2.5-3.5MV cm)-1，Si 0.6MV cm-1) High thermal conductivity (4.9W cm)-1K-1) And the like, so that the SiC device can work in the occasions of high voltage, high switching frequency and high power density. Because of its excellent thermal conductivity, in semiconductorsThe field of manufacturing power devices such as lasers and the like is a key material for manufacturing heat sinks, and third-generation semiconductor materials represented by SiC are important supports for improving the core competitiveness of new-generation information technologies.
One of the core technologies of semiconductor devices is a heat dissipation technology, because the size of a semiconductor chip is very small, the heat flow density is very high during operation, if the heat dissipation cannot be performed in time, the junction temperature can be increased, the parameters such as the threshold power, the output power, the wavelength and the average service life of the semiconductor device can be greatly influenced, and even the device can be completely damaged. The heat sink is a container for heat transfer of the semiconductor device, belongs to a key core component of a heat dissipation technology, and the performance and the service life of the semiconductor device are determined by the heat dissipation capacity of the heat sink. With the application requirements of high-power semiconductor devices, an effective heat dissipation device is of great importance to the device design.
Chinese patent 200910018772 provides a method for fabricating a roughened surface of a semiconductor device using PS spheres as a template. The method comprises the following steps: (1) growing an epitaxial wafer according to a conventional epitaxy method; (2) laying a single-layer film formed by closely arranging PS balls on the P-type contact layer grown in an epitaxial mode; (3) tetraethyl silicate and metal chloride or nitrate are used as precursors, the precursors, ethanol and water are mixed and then filled in a gap between a PS sphere of a single-layer film and a P-type contact layer, and the mixture is stood at room temperature and is heated to decompose into corresponding oxides; (4) placing the epitaxial wafer in dichloromethane, dissolving the PS balls by using dichloromethane to remove the PS balls, and keeping an oxide formed in gaps between the PS balls and the P-type contact layer on the P-type contact layer according to a bowl-shaped periodic arrangement structure;
(5) using the formed oxide as a mask, and etching the P-type contact layer by a dry method to form a roughened surface; (6) and corroding the residual oxide. The method can obtain the roughened device surface with controllable etching period and depth. The method has the advantages that the design that the PS microspheres are used as templates to coarsen the p-GaN surface through ICP etching is extremely complicated, a series of corrosion and chemical processes are introduced in the process, and the PS microspheres which are expensive auxiliary consumables are used, so that the chip manufacturing cost is greatly increased, and the method is not suitable for being combined with a chip production process. And the method does not avoid damage of the ICP etching process to the electrical performance of the device and increase of the cost. The patterning process using the laser processing method used in the present invention is not concerned.
Chinese patent 200910018771 discloses a method for roughening a red light emitting diode using an ITO particle mask. The method for coarsening the red light emitting diode by utilizing the ITO particle mask comprises the following steps: (1) sequentially epitaxially growing an N-type contact layer, a multi-quantum well active region and a P-type contact layer on a substrate by a conventional metal organic chemical vapor deposition method, wherein the substrate is made of a GaAs material; (2) sputtering an ITO film with the thickness of 260nm on the P-type contact layer which grows in an epitaxial mode by using electron beams; (3) immersing the epitaxial wafer covered with the ITO into concentrated hydrochloric acid for 1 minute, and corroding part of the ITO to leave granular ITO; (4) using the residual ITO particles as a mask, and etching the P-type contact layer by a dry method to form a roughened surface; (5) and etching off residual ITO by using concentrated hydrochloric acid. The method needs to evaporate the ITO current expansion layer twice, and the cost is obviously improved compared with the normal LED process. In addition, the damage of the ICP etching process to the electrical properties of the LED device is not avoided. In addition, the method needs to use concentrated hydrochloric acid, which has strong corrosivity and volatility and can cause certain damage to other precision equipment and operators. The patterning process using the laser processing method used in the present invention is not concerned.
Chinese patent 201010182003.3 discloses a single-mode high-power vertical cavity surface emitting laser based on SiC heat sink. The N-type active/passive silicon solar cell comprises an N electrode, an SiC substrate, an N-type DBR, an active region, an oxidation limiting layer, a P-type DBR, SiC (an electrode + a window + a heat sink), Si0, a mask and solder. The invention is characterized in that an inverted top emission structure is adopted. The light-emitting window is manufactured on the P-type DBR, a top light-emitting mode is adopted, and the heat sink is also arranged at one end of the P surface. The SiC wafer is modified by a special technology and simultaneously has high thermal conductivity, high electrical conductivity and high transmittance of near infrared band light. The SiC wafer is used for replacing a P electrode, a light-emitting window and a heat sink in the traditional structure, and the functions of the P electrode, the light-emitting window and the heat sink are combined into one. The SiC wafer is used as an electrode, and a planar electrode or a non-uniform grid electrode mode is used for replacing a ring-shaped P electrode of the traditional VCSEL; the SiC wafer is used as a heat sink material, has a thermal expansion coefficient similar to that of GaAs materials, and is directly connected with the P surface of the epitaxial wafer in an inverted manner; the SiC wafer simultaneously becomes the light exit window. The patterning process using the laser processing method used in the present invention is not concerned.
Chinese patent 201710112965.3 provides a heat sink for a high power semiconductor laser, comprising: a diamond substrate; a metal layer prepared on the surface of the diamond substrate; and preparing a welding layer for welding the laser chip on the surface of the metal layer. According to the invention, the diamond material with high thermal conductivity is used as the substrate to manufacture the heat sink, so that the heat dissipation efficiency of the semiconductor laser chip during working is improved, the working temperature of the chip is reduced, and the technical problem of poor heat dissipation of the high-power laser chip is solved. It is not relevant that the present invention is designed to utilize SiC material as a heat sink.
Chinese patent 201010182003.3 the present invention relates to a single-mode high-power vertical cavity surface emitting laser based on SiC heat sink. The N-type active/passive silicon solar cell comprises an N electrode, an SiC substrate, an N-type DBR, an active region, an oxidation limiting layer, a P-type DBR, SiC (an electrode + a window + a heat sink), Si0, a mask and solder. The invention is characterized in that an inverted top emission structure is adopted. The light-emitting window is manufactured on the P-type DBR, a top light-emitting mode is adopted, and the heat sink is also arranged at one end of the P surface. The SiC wafer is modified by a special technology and simultaneously has high thermal conductivity, high electrical conductivity and high transmittance of near infrared band light. The silicon wafer replaces a P electrode, a light-emitting window and a heat sink in the traditional structure, and combines the functions of the three into one. The SiC wafer is used as an electrode, and a planar electrode or a non-uniform grid electrode mode is used for replacing a ring-shaped P electrode of the traditional VCSEL; the Sic wafer is used as a heat sink material, has a thermal expansion coefficient similar to that of GaAs materials, and is directly connected with the P surface of the epitaxial wafer in an inverted manner; the SiC wafer simultaneously becomes the light exit window. The method of patterning SiC by laser processing used in the present invention is not concerned.
Disclosure of Invention
In order to solve the technical problems, the invention provides a SiC heat sink based on laser processing and a preparation method thereof, so as to achieve the purpose of improving the heat dissipation performance of the SiC heat sink.
In order to achieve the purpose, the technical scheme of the invention is as follows:
based onThe SiC heat sink processed by laser comprises a SiC layer and SiO in turn from bottom to top2-SiO2A bonding layer, and a semiconductor crystal layer, the SiO2-SiO2The bonding layer is made of first SiO2Layer and second SiO2Layer bonding to obtain the second SiO2Layer is located on the first SiO2Above the layer, the first SiO2Grooves are obtained on the layer and the SiC layer by a laser processing method.
In the above scheme, the first SiO2The layer is deposited on the SiC layer by PECVD, sputtering or electron beam evaporation techniques.
In the above aspect, the second SiO is2The layers are grown on the semiconductor crystal layer by the MOCVD technique.
In the above aspect, the material of the semiconductor crystal layer is selected from GaAs, InAs, GaN, InP, AlP, GaP, InGaAsP, AlGaInP, and AlGaAs.
In the scheme, a 355nm laser is selected in the laser processing method, the power is 2.5W, and the repetition frequency is 0-1 MHz.
In the above scheme, the first SiO2Layer and second SiO2The method of layer bonding is selected from adhesive bonding, anodic bonding or plasma activated bonding.
In a further technical scheme, the adhesive bonded with the adhesive comprises epoxy resin, a dry film, bis-benzocyclobutene, polyimide and a UV curing compound.
A preparation method of a SiC heat sink based on laser processing comprises the following steps:
(1) depositing a first SiO on the SiC layer by PECVD, sputtering or electron beam evaporation techniques2A layer;
(2) in the first SiO2Grooves are obtained on the layer and the SiC layer by a laser processing method;
(3) growing a second SiO on the semiconductor crystal layer by MOCVD technique2A layer;
(4) the first SiO2Layer and second SiO2And bonding the layers to obtain the SiC heat sink.
Through the technical scheme, the SiC heat sink based on laser processing and the preparation method thereof have the following beneficial effects:
1. the invention adopts SiC as the heat sink of the semiconductor device, thus effectively improving the heat dissipation capability of the semiconductor chip.
2. The invention uses SiO2-SiO2The bond and layer combine the group III V semiconductor crystal with the SiC layer, solving the problem of lattice mismatch in the direct combination of the semiconductor material and SiC.
2. According to the invention, the air channel is formed in the SiC heat sink by a laser processing method, so that the heat dissipation area is increased.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a front longitudinal sectional view of a laser processing based SiC heat sink as disclosed in an embodiment of the present invention;
fig. 2 is a schematic sectional view taken along line a-a of fig. 1.
In the figure, 1, a SiC layer; 2. a groove; 3. first SiO2A layer; 4. second SiO2A layer; 5. a semiconductor crystal layer.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The invention provides a SiC heat sink based on laser processing, which comprises a SiC layer 1 and SiO sequentially from bottom to top as shown in figures 1 and 22-SiO2Bonding layer, and semiconductor crystal layer 5, SiO2-SiO2The bonding layer is made of first SiO2Layer 3 and second SiO2Layer 4 bonded to obtain the second SiO2Layer 4 is located on the first SiO2Above layer 3, first SiO2The grooves 2 are obtained on the layer 3 and the SiC layer 1 by a laser machining method.
The material of the semiconductor crystal layer 5 is selected from GaAs, InAs, GaN, InP, AlP, GaP, InGaAsP, AlGaInP, and AlGaAs.
The SiC heat sink has a circular cross section and a diameter of 5-100 mm.
The thickness of the SiC layer 1 is 0.1-1 mm.
In the laser processing method, a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 0-1 MHz.
A preparation method of a SiC heat sink based on laser processing comprises the following steps:
(1) depositing a first SiO on the SiC layer 1 by PECVD, sputtering or electron beam evaporation techniques2A layer;
(2) in the first SiO2Grooves 2 are obtained on the layer 3 and the SiC layer 1 through a laser processing method;
(3) growing a second SiO on the semiconductor crystal layer 5 by the MOCVD technique2A layer 4;
(4) the first SiO2Layer 3 and second SiO2And bonding the layers 4 to obtain the SiC heat sink, wherein the adhesive for bonding the adhesive comprises epoxy resin, a dry film, bis-benzocyclobutene, polyimide and a UV curing compound.
Example 1:
a SiC heat sink structure with patterns based on a laser processing method comprises a SiC layer 1 and SiO which are sequentially stacked from bottom to top2-SiO2A bonding layer and a semiconductor crystal layer 5; SiO 22-SiO2The bonding layer is formed by a first SiO deposited on the SiC layer 12Layer 3 and a second SiO grown on the III V group semiconductor crystal layer 52Layer 4 is bonded; the groove 2 with the pattern structure forms an air channel, so that the heat dissipation capacity of the chip during working can be effectively improved.
In this embodiment, the diameter of the SiC layer 1 is 5 mm; the thickness is 0.1 mm; first SiO deposited on SiC layer 1 by PECVD technique2Layer 3 has a thickness of 900 nm; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 900 KHz; second SiO grown on the semiconductor crystal layer 5 by an electron beam evaporation technique2Layer 4 is 100nm thick; first SiO2Layer and second SiO2The bonding technique of the layers uses polyimide adhesive bonding; the semiconductor crystal layer 5 is made of GaAs; the thickness was 950 nm.
Example 2:
in this example, the diameter of the SiC layer 1 is 25 mm; the thickness is 0.5 mm; first SiO deposited on SiC layer 1 by sputtering technique2Layer 3 thickness is 1800 nm; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 100 KHz; second SiO grown on the semiconductor crystal layer 5 by an electron beam evaporation technique2Layer 4 is 10nm thick; first SiO2Layer and second SiO2The bonding and technique of the layers is plasma activated bonding; InAs is selected as the material of the semiconductor crystal layer 5; the thickness was 60 nm.
Example 3:
in this embodiment, the diameter of the SiC layer 1 is 45 mm; the thickness is 1 mm; first SiO deposited on SiC layer 1 by PECVD technique2Layer 3 is 2400nm thick; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 800 KHz; second SiO grown on the semiconductor crystal layer 5 by sputtering technique2Layer 4 is 1um thick; first SiO2Layer and second SiO2The bonding and technique of the layers employs anodic bonding; the material of the semiconductor crystal layer 5 is GaN; the thickness is 800 nm.
Example 4:
in this embodiment, the diameter of the SiC layer 1 is 60 mm; the thickness is 0.7 mm; first SiO deposited on SiC layer 1 by Electron Beam Evaporation2Layer 3 has a thickness of 300 nm; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 0.7 MHz; a second SiO layer grown on the semiconductor crystal layer 5 by PECVD technique2Layer 4 is 2um thick; first SiO2Layer and second SiO2The bonding of the layers and techniques employs UV curing compound adhesive bonding; InP is selected as the material of the semiconductor crystal layer 5; the thickness was 750 nm.
Example 5:
in this embodiment, the diameter of the SiC layer 1 is 50 mm; the thickness is 0.8 mm; first SiO deposited on SiC layer 1 by PECVD technique2Layer 3 has a thickness of 1300 nm; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 80 KHz; second SiO grown on the semiconductor crystal layer 5 by PECVD technique2Layer 4 is 3um thick; first SiO2Layer and second SiO2The bond and technique of the layers is bonded using a polyimide adhesive; the material of the semiconductor crystal layer 5 is GaN(ii) a The thickness was 600 nm.
Example 6:
in this embodiment, the diameter of the SiC layer 1 is 100 mm; the thickness is 0.9 mm; first SiO deposited on SiC layer 1 by PECVD technique2Layer 3 has a thickness of 2500 nm; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 600 KHz; second SiO grown on the semiconductor crystal layer 5 by an electron beam evaporation technique2Layer 4 has a thickness of 2500 nm; first SiO2Layer and second SiO2The bonds and techniques of the layers are bonded using epoxy adhesives; InP is selected as the material of the semiconductor crystal layer 5; the thickness was 250 nm.
Example 7:
in this example, the diameter of the SiC layer 1 is 85 mm; the thickness is 0.5 mm; first SiO deposited on SiC layer 1 by Electron Beam Evaporation2Layer 3 is 3um thick; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 400 KHz; second SiO grown on the semiconductor crystal layer 5 by an electron beam evaporation technique2Layer 4 is 1500nm thick; first SiO2Layer and second SiO2The bonding and technique of the layers is plasma activated bonding; the material of the semiconductor crystal layer 5 is AlP; the thickness was 500 nm.
Example 8:
in this embodiment, the diameter of the SiC layer 1 is 95 mm; the thickness is 0.6 mm; first SiO deposited on SiC layer 1 by PECVD technique2Layer 3 is 2um thick; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 300 KHz; second SiO grown on the semiconductor crystal layer 5 by sputtering technique2Layer 4 has a thickness of 500 nm; first SiO2Layer and second SiO2The bonding and technique of the layers employs anodic bonding; GaP is selected as the material of the semiconductor crystal layer 5; the thickness was 50 nm.
Example 9:
in this embodiment, the diameter of the SiC layer 1 is 70 mm; the thickness is 0.3 mm; first SiO deposited on SiC layer 1 by Electron Beam Evaporation2Layer 3 is 1um thick; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 500 KHz; a second SiO layer grown on the semiconductor crystal layer 5 by PECVD technique2Layer 4 has a thickness of 1200 nm; first SiO2Layer and second SiO2The bonds and techniques of the layers are bonded using epoxy adhesives; the material of the semiconductor crystal layer 5 is AlGaInP; the thickness was 100 nm.
Example 10:
in this embodiment, the diameter of the SiC layer 1 is 20 mm; the thickness is 0.4 mm; first SiO deposited on SiC layer 1 by PECVD technique2Layer 3 is 1500nm thick; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 1 MHz; SiO grown on the semiconductor crystal layer 5 by sputtering technique2Layer 4 has a thickness of 2200 nm; first SiO2Layer and second SiO2The bond and technique of the layers is bonded by a Biphenyl cyclobutene adhesive; AlGaAs is selected as the material of the semiconductor crystal layer 5; the thickness was 10 nm.
Example 11:
in this embodiment, the diameter of the SiC layer 1 is 55 mm; the thickness is 0.2 mm; first SiO deposited on SiC layer 1 by PECVD technique2Layer 3 has a thickness of 500 nm; a 355nm laser is selected, the power is 2.5W, and the repetition frequency is 200 KHz; second SiO grown on the semiconductor crystal layer 5 by an electron beam evaporation technique2Layer 4 has a thickness of 600 nm; first SiO2Layer and second SiO2The bonding and technique of the layers is by dry film adhesive bonding; the semiconductor crystal layer 5 is made of InGaAsP; the thickness is 1 um.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. The SiC heat sink based on laser processing is characterized by sequentially comprising a SiC layer and SiO from bottom to top2-SiO2A bonding layer, and a semiconductor crystal layer, the SiO2-SiO2Bonding layerFrom the first SiO2Layer and second SiO2Layer bonding to obtain the second SiO2Layer is located on the first SiO2Above the layer, the first SiO2Grooves are obtained on the layer and the SiC layer by a laser processing method.
2. The SiC heat sink of claim 1, wherein the first SiO is2The layer is deposited on the SiC layer by PECVD, sputtering or electron beam evaporation techniques.
3. The SiC heat sink of claim 1, wherein the second SiO is2The layers are grown on the semiconductor crystal layer by the MOCVD technique.
4. The SiC heat sink of claim 1, wherein the material of the semiconductor crystal layer is selected from GaAs, InAs, GaN, InP, AlP, GaP, InGaAsP, AlGaInP, AlGaAs.
5. The SiC heat sink based on laser processing of claim 1, wherein a 355nm laser is selected in the laser processing method, the power is 2.5W, and the repetition frequency is 0-1 MHz.
6. The SiC heat sink of claim 1, wherein the first SiO is2Layer and second SiO2The method of layer bonding is selected from adhesive bonding, anodic bonding or plasma activated bonding.
7. The laser processing based SiC heatsink of claim 6, wherein the adhesive-bonded adhesive comprises epoxy, dry film, bis-benzocyclobutene, polyimide, and UV-curable compounds.
8. A preparation method of a SiC heat sink based on laser processing is characterized by comprising the following steps:
(1) depositing a first SiO on the SiC layer by PECVD, sputtering or electron beam evaporation techniques2A layer;
(2) in the first SiO2Grooves are obtained on the layer and the SiC layer by a laser processing method;
(3) growing a second SiO on the semiconductor crystal layer by MOCVD technique2A layer;
(4) the first SiO2Layer and second SiO2And bonding the layers to obtain the SiC heat sink.
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| DE102021130989A1 (en) | 2021-11-25 | 2023-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | ELECTRONIC DEVICE AND METHOD OF MAKING AN ELECTRONIC DEVICE |
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