CN101814408B - Manufacturing method of surface-conduction electron emission source based on nano-imprint - Google Patents
Manufacturing method of surface-conduction electron emission source based on nano-imprint Download PDFInfo
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- CN101814408B CN101814408B CN2010101400094A CN201010140009A CN101814408B CN 101814408 B CN101814408 B CN 101814408B CN 2010101400094 A CN2010101400094 A CN 2010101400094A CN 201010140009 A CN201010140009 A CN 201010140009A CN 101814408 B CN101814408 B CN 101814408B
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Abstract
The invention relates to the technical field of the display device of the surface-conduction electron emission flat panel, and discloses a manufacturing method of a surface-conduction electron emission source based on nano-imprint, which particularly comprises the following steps: firstly, preparing a silastic punch used for manufacturing emission gaps of a surface-conduction electron emission source based on imprint; secondly, manufacturing a left electrode, a right electrode, a line extraction electrode and a row extraction electrode on a glass substrate; thirdly, transferrrign UV glue to the glass substrate between the left electrode and the right electrode with the silastic punch according to the reverse imprinting technology, and curing and shaping the UV glue with ultraviolet light to form a spacing bar; then, manufacturing a Pd electron emission film lapped on the left electrode, the right electrode and the spacing bar through overprinting lithography, magnetron sputtering and stripping in sequence; finally, adopting a liquid nitrogen chilling process to soak and chill the Pd electron emission film in liquid nitrogen, so that the Pd electron emission film can be condensed on the top of the spacing bar to form arched cracks, thereby forming the emission gaps of the electron emission source.
Description
Technical field
The present invention relates to surface conductive electron-emission flat panel display spare technology, particularly a kind of manufacture method of the surface-conduction electron emission source based on nano impression.
Background technology
The emission of surface conductive electronics is that the scientist of the former Soviet Union found in early 1960s, belong to the thin film field emission of plane, but emission is unstable, can't be applied to show that therefore, after the seventies in 20th century, few people carry out the research again.
The SI Diamond Technology company that the U.S. specializes in nano material and the research and development of lift-off technology proposed the principle and the complete structure of SED (Surface-conduction Electron-emitter Display) device the earliest in 1992, cathode material is the composite material of metal and medium, and thinks that the surface electronic conductive process is the jump conduction of electronics between metal and dielectric interface.
Canon Inc. has started the research of surface conductive electronics emission the eighties in 20th century, obtain more stable emission by series of process, and open structure, the manufacture method that discloses conventional surface conduction electron emission electron source in the flat 8-321254 communique the spy.
In the manufacture method of above routine, " the formation operation " that form electron-emitting area undertaken by apply voltage to conductive film.The Joule heat (Jiao Erre) that the institute making alive produces makes conductive film partly change character and distortion and forms nano gap.Therefore, mainly there are following two problems in this method:
(1) control problem of the position of electron-emitting area and shape
The position that adds electric forming II gap 5 of conductive film depends on various factors, if conductive film is uniformly, and device electrode has good symmetry, can think that then proper meeting forms II gap 5 in the central authorities of two electrodes.But in fact, the inhomogeneous and electrode shape of conductive film asymmetric has generality, caused the inconsistent of position that the gap forms and shape.When electron-emitting area slit degree of crook was big, the enlarged-diameter of its institute's electrons emitted bundle can produce big bright spots on the fluorescent film of image processing system.Like this, partly irradiation is on adjacent pixels for the electron beam of crooked electron-emitting area, and the quality that makes display image is deterioration seriously.
(2) because the problem of the big caused current in wire capacity of formation electric current
Electric current during formation current ratio electron emission source operate as normal that " formation operation " needs is much bigger.Particularly when making a large amount of electron source array, " formation operation " will carry out on a plurality of electron-emitting areas simultaneously, thereby requires lead to have the current capacity of electric current that tolerance adds.But in case " formation operation " finished, actual needed current capacity is very little in the operate as normal.Thereby, if can eliminate the difference of current capacity or avoid " formation operation ", just can make the design narrowed width of lead and increase the degree of freedom in the device design.
In order to address the above problem, patent 95117375.8 has proposed a kind of technology that has a pair of device electrode of different thickness and form electron-emitting area along the edge of thicker device electrode.Patent 03106605.4 is controlled the position that crackle forms by the patterned conductive film.Te Kaiping 2-297940 discloses a kind of position at the making electron-emitting area one step formation parts has been set, and forms the technology of electron-emitting area along step.Te Kaiping 7-325279 has proposed a kind ofly to lead the part conductive film with laser beam irradiation, and the component that changes this partially conductive film increases its resistance, and by " formation operation " it is become the technology of electron-emitting area.
As mentioned above, the position of control electron-emitting area and the method for profile in the technology of making electron-emitting area.All these methods all are in order to change the partially conductive film of electron emission source, by special technique as with laser beam or use the project organization of special pearl to control the position and the shape of crackle, yet, all can not avoid " formation operation ", and the consistency of crackle is unsatisfactory.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of the surface-conduction electron emission source based on nano impression, can with existing display device preparation technology compatibility, and simple, fast and low-cost.
In order to achieve the above object, the present invention by the following technical solutions with to realize.
A kind of manufacture method of the surface-conduction electron emission source based on nano impression specifically may further comprise the steps:
The first step, preparation are used to make the silicon rubber punch in stamping surface conduction electron emission source emission gap;
In second step, on glass substrate, make left and right electrode and row, column extraction electrode;
In the 3rd step, utilize the silicon rubber punch to adopt contrary stamping technique that UV glue is transferred on the glass substrate in left and right electrode centre position, and, form spacer bar with the ultraviolet light polymerization typing; Then, adopt chromatography photoetching process, magnetron sputtering technique, stripping technology to make the Pd electron emission film that is overlapped on left and right electrode and the spacer bar successively; At last, adopt the liquid nitrogen chilling technology, soak Quench in liquid nitrogen, the Pd electron emission film forms the crackle that arches upward in the shrinkage of spacer bar top, constitutes the emission gap of electron emission source.
Further characteristics of the present invention are
(1) the concrete technology of the described first step is: at first, make the corresponding die that is used to prepare with the silicon rubber punch by common photoetching and etch process at the bottom of the silicon wafer-based; Then, by mould rotating technology, the employing ratio is that 10: 1 silicon rubber and corresponding curing agent mixture turns over system silicon rubber punch.
(2) the concrete technology in described second step is: at first, adopt common photoetching and etch process to make the Pt electrode pattern on glass substrate; Then, adopt the magnetron sputtering technique Pt film that sputter 100nm is thick on left and right electrode pattern; Adopt stripping technology again, unnecessary Pt film is removed in immersion, ultrasonic cleaning in acetone, forms left and right electrod-array, and wherein right electrode and row extraction electrode are one; Then, adopt the intersection preparation insulation glue-line of screen printing technique, guarantee the not short circuit of left and right electrode at row electrode and row extraction electrode; At last, adopt screen printing technique to make the row extraction electrode, be used for the left electrode with delegation is linked together, constitute the line scanning electrode.
(3) the concrete technology in described the 3rd step is: at first, utilize the silicon rubber punch to adopt contrary stamping technique that UV glue is transferred on the glass substrate in left and right electrode centre position, and with the ultraviolet light polymerization typing, form spacer bar; Then, adopt the chromatography photoetching process that the Pd electron emission film graphically is positioned on the spacer bar, overlap left and right sides electrode simultaneously; Adopt the thick Pd electron emission film of magnetron sputtering technique sputter 20nm again; Then, adopt stripping technology, unnecessary Pd electron emission film is removed in immersion, ultrasonic cleaning in acetone, makes the Pd electron emission film cover spacer bar and overlap joint left and right sides electrode; At last, adopt the liquid nitrogen chilling technology, soak Quench in liquid nitrogen, the Pd electron emission film forms the crackle that arches upward in the shrinkage of spacer bar top, constitutes electron emission source emission gap.
Further characteristics of the present invention are: the stripping technology in described the 3rd step and the precedence of liquid nitrogen chilling technology can be exchanged.
The present invention adopts the contrary prefabricated photoresist line spacer bar of stamping technique to induce, utilize the difference of photoresist line spacer bar and Pd electron emission film shrinkage coefficient to form Pd electron emission film stress by the liquid nitrogen Quench and concentrate the cracking that arches upward, constitute electron emission source emission gap, and can guarantee the height unanimity of crack position, can guarantee the quality and the rate of finished products of the surface conductive electron-emission flat panel display made; The present invention has abandoned traditional SED and has adopted Joule heat to concentrate the process of firing nano slit, the inhomogeneities and the unreliability of having avoided the processing of nano slit between traditional SED electron emissive film, and the electronic transmitting efficiency that is brought thus is low, shortcomings such as lack of homogeneity, and the design ampacity of row, column electrode is significantly reduced, provide the bigger degree of freedom to circuit design.
Description of drawings
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Fig. 1 is the schematic cross-section of the surface conductive electronics electron emission device of routine; Among Fig. 1: the 1st, matrix, the 2, the 3rd, a pair of electrode of opposite, the 4th, conductive film, 5 is II gaps, the 6th, the carbon film, 7 is I gaps.
Fig. 2-13 is the schematic diagram of the making flow process of a kind of surface-conduction electron emission source based on nano impression of the present invention, and wherein figure (a) be a front view, and figure (b) is for scheming the A-A cutaway view of (a);
The mask pattern of Figure 14-18 for using in the above-mentioned making flow process;
Figure 19 is the surface-conduction electron emission source structural representation based on nano impression of the present invention; Wherein scheme
(a) be front view, figure (b) is the A-A cutaway view of figure (a).
Embodiment
The manufacture method of the surface-conduction electron emission source based on nano impression of the present invention specifically may further comprise the steps:
The first step, preparation are used to make the silicon rubber punch in stamping surface conduction electron emission source emission gap;
Concrete technology is:
At first, with reference to Fig. 2, make the corresponding die (hard mold) that is used to prepare with the silicon rubber punch by common photoetching and etch process at the bottom of the silicon wafer-based, its figure be long 200um, wide 5um, and 5um deeply, spacing is the wire casing array of 205um; Wherein the mask plate patterns used of photoetching as shown in figure 14;
Then, with reference to Fig. 3, pass through mould rotating technology, the employing ratio is that 10: 1 silicon rubber (ESSIL296/296-OIL) and corresponding curing agent (ESSIL 296/296 LPL) mixture turns over system silicon rubber punch, and its figure is long 200um, wide 5um, high 5um, spacing is the line array of 205um.
In second step, on glass substrate, make left and right electrode and row, column extraction electrode; Concrete technology is:
At first, with reference to Fig. 4, adopt common photoetching and etch process to make the Pt electrode pattern on glass substrate, the figure of the mask that photoetching is used as shown in figure 15;
Then, with reference to Fig. 5, adopt the magnetron sputtering technique Pt film that sputter 100nm is thick on left and right electrode pattern; Adopt stripping technology again, the Pt film on the photoresist is removed in immersion, ultrasonic cleaning in acetone, forms left and right electrod-array, and wherein right electrode and row extraction electrode are one, as shown in Figure 6.
Then, with reference to Fig. 7, adopt the intersection preparation insulation glue-line (SU8) of screen printing technique at row electrode and row extraction electrode, guarantee the not short circuit of left and right electrode, its silk screen printing domain as shown in figure 16;
At last, with reference to Fig. 8, adopt screen printing technique to make row extraction electrode (platinum bar), be used for the left electrode with delegation is linked together, constitute the line scanning electrode, its silk screen printing domain as shown in figure 17;
In the 3rd step, utilize the silicon rubber punch to adopt contrary stamping technique that UV glue is transferred on the glass substrate in left and right electrode centre position, and, form spacer bar with the ultraviolet light polymerization typing; Then, adopt chromatography photoetching process, magnetron sputtering technique, stripping technology, nitrogen chilling technology to make the Pd electron emission film that is overlapped on left and right electrode and the spacer bar successively; Concrete technology is:
At first, utilize the silicon rubber punch to adopt contrary stamping technique with UV glue (model: EPG533) be transferred on the glass substrate in left and right electrode centre position, and, form spacer bar, as shown in Figure 9 with the ultraviolet light polymerization typing;
Then, with reference to Figure 10, adopt the chromatography photoetching process that the emission of Pd electronics graphically is positioned on the spacer bar, overlap left and right sides electrode simultaneously, its Lithographic template is seen Figure 18; Adopt the thick Pd electron emission film of magnetron sputtering technique sputter 20nm, as shown in figure 11, wherein splash-proofing sputtering process parameter is voltage 600V, electric current 1A, 150 ℃ of substrate temperatures, 2 minutes time;
Then, adopt stripping technology, the unnecessary Pd electron emission film on the photoresist is removed in immersion, ultrasonic cleaning in acetone, makes the Pd electron emission film cover spacer bar and overlap joint left and right sides electrode, as shown in figure 12;
At last, adopt the liquid nitrogen chilling technology, soak Quench in liquid nitrogen, the Pd electron emission film forms the crackle that arches upward in the shrinkage of spacer bar top, constitutes the emission gap of electron emission source, and as shown in figure 13, single electron emission source structure as shown in figure 19.The present invention utilizes Pd electron emission film and ultraviolet cured adhesive spacer bar shrinkage coefficient there are differences, and the Pd electron emission film is concentrated and formed the crackle that arches upward at spacer bar top shrinkage stress.Although below in conjunction with the accompanying drawings embodiment of the present invention are described, invention is not limited to above-mentioned specific embodiments, and above-mentioned specific embodiments only is schematic, guiding, rather than restrictive.Those of ordinary skill in the art under the situation that does not break away from the scope that claim of the present invention protects, can also make a variety of forms under the enlightenment of this specification, these all belong to the row of the present invention's protection.
Claims (5)
1. manufacture method based on the surface-conduction electron emission source of nano impression specifically may further comprise the steps:
The first step, preparation are used to make the silicon rubber punch in stamping surface conduction electron emission source emission gap;
In second step, on glass substrate, make left and right electrode and row, column extraction electrode;
In the 3rd step, utilize the silicon rubber punch to adopt contrary stamping technique that UV glue is transferred on the glass substrate in left and right electrode centre position, and, form spacer bar with the ultraviolet light polymerization typing; Then, adopt chromatography photoetching process, magnetron sputtering technique, stripping technology to make the Pd electron emission film that is overlapped on left and right electrode and the spacer bar successively; At last, adopt the liquid nitrogen chilling technology, soak Quench in liquid nitrogen, the Pd electron emission film forms the crackle that arches upward in the shrinkage of spacer bar top, constitutes the emission gap of electron emission source.
2. the manufacture method of a kind of surface-conduction electron emission source based on nano impression according to claim 1, it is characterized in that, the concrete technology of the described first step is: at first, make the corresponding die that is used to prepare with the silicon rubber punch by common photoetching and etch process at the bottom of the silicon wafer-based; Then, by mould rotating technology, the employing ratio is that 10: 1 silicon rubber and corresponding curing agent mixture turns over system silicon rubber punch.
3. the manufacture method of a kind of surface-conduction electron emission source based on nano impression according to claim 1 is characterized in that, the concrete technology in described second step is: at first, adopt common photoetching and etch process to make the Pt electrode pattern on glass substrate; Then, adopt the magnetron sputtering technique Pt film that sputter 100nm is thick on left and right electrode pattern; Adopt stripping technology again, unnecessary Pt film is removed in immersion, ultrasonic cleaning in acetone, forms left and right electrod-array, and wherein right electrode and row extraction electrode are one; Then, adopt the intersection preparation insulation glue-line of screen printing technique, guarantee the not short circuit of left and right electrode at row electrode and row extraction electrode; At last, adopt screen printing technique to make the row extraction electrode, be used for the left electrode with delegation is linked together, constitute the line scanning electrode.
4. the manufacture method of a kind of surface-conduction electron emission source based on nano impression according to claim 1, it is characterized in that, the concrete technology in described the 3rd step is: at first, utilize the silicon rubber punch to adopt contrary stamping technique UV glue to be transferred on the glass substrate in left and right electrode centre position, and, form spacer bar with the ultraviolet light polymerization typing; Then, adopt the chromatography photoetching process that the Pd electron emission film graphically is positioned on the spacer bar, overlap left and right sides electrode simultaneously; Adopt the thick Pd electron emission film of magnetron sputtering technique sputter 20nm again; Then, adopt stripping technology, unnecessary Pd electron emission film is removed in immersion, ultrasonic cleaning in acetone, makes the Pd electron emission film cover spacer bar and overlap joint left and right sides electrode; At last, adopt the liquid nitrogen chilling technology, soak Quench in liquid nitrogen, the Pd electron emission film forms the crackle that arches upward in the shrinkage of spacer bar top, constitutes electron emission source emission gap.
5. according to the manufacture method of claim 1 or 3 described a kind of surface-conduction electron emission sources based on nano impression, it is characterized in that the stripping technology in described the 3rd step and the precedence of liquid nitrogen chilling technology can be exchanged.
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| CN101989520B (en) * | 2010-10-22 | 2012-07-25 | 西安交通大学 | Laminated film and method for manufacturing waveform-contour controlled surface-conduction electron emission source of laminated film |
| CN102623278B (en) * | 2012-04-21 | 2014-11-05 | 福州大学 | Manufacturing method of surface conduction field emission electron source based on contact printing transfer |
| CN104576267B (en) * | 2015-01-23 | 2017-08-01 | 西安交通大学 | A kind of surface-conduction electron emission source structure and preparation method thereof |
| CN115946463A (en) * | 2023-01-30 | 2023-04-11 | 歌尔股份有限公司 | UV rendition technology and UV rendition frock |
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