CN101777591B - Full-spectral-domain laminated silicon-base film solar cell - Google Patents
Full-spectral-domain laminated silicon-base film solar cell Download PDFInfo
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- CN101777591B CN101777591B CN2009102452055A CN200910245205A CN101777591B CN 101777591 B CN101777591 B CN 101777591B CN 2009102452055 A CN2009102452055 A CN 2009102452055A CN 200910245205 A CN200910245205 A CN 200910245205A CN 101777591 B CN101777591 B CN 101777591B
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Abstract
The invention relates to a full-spectral-domain laminated silicon-base film solar cell, which is made of three silicon-base film solar cells laminated and deposited on a substrate, wherein a first p-i-n cell is a wide band-gap silicon-base film cell, a second p-i-n cell is a medium band-gap silicon-base film cell and a third p-i-n cell is a narrow band-gap silicon-base film cell. Silicon-germanium alloy narrow band-gap material is used as an absorbing layer, the band gap is (0.66-1.1) eV and the thickness is (1000-3000) nm. The invention has the advantages that the structure is simple; and the silicon-germanium alloy is used for the narrow band-gap material, in combination with other silicon-base film alloy materials, the band gap among different absorbing layer materials is 2.0eV-0.66eV, so the optimum current matching of the laminated cell is realized, the full-spectral-domain response made by the silicon-base film cell to the solar spectrum of 300nm-1800nm is realized and the photoelectric conversion efficiency of the cell is improved.
Description
[technical field]
The present invention relates to the structural design of silicon-based film solar cells, particularly a kind of full-spectral-domain laminated silicon-base film solar cell.
[technical background]
Silicon-based thin film solar cell have manufacturing process simple, be convenient to the large tracts of land serialization and produce, save advantages such as raw material, progressively move towards industrialization at present.For the response range of expanding solar spectrum, photoelectric conversion efficiency and the stability that improves battery, generally adopt at present and have many knots laminated cell structure of different band gap intrinsic absorbed layers, the first floor, the second layer and succeeding layer have the band gap of successively decreasing, and the solar spectrum wavelength of each layer absorption then constantly increases progressively.More common amorphous silicon-microcrystal silicon binode lamination, amorphous silicon-amorphous silicon germanium-amorphous silicon germanium and the amorphous silicon-amorphous silicon germanium-microcrystal silicon three that has is tied laminated construction etc.In said structure, all adopt the microcrystal silicon of narrow band gap or amorphous silicon germanium material as bottom cell, absorb the long wave part in the solar spectrum.
But, no matter be that (Ge content is 100% o'clock for microcrystal silicon material or amorphous silicon germanium, be the amorphous germanium material), its minimum theoretical band gap is 1.1eV, thereby can't absorb the photon of solar spectrum medium wavelength greater than 1100nm, cause certain light loss, limited the further raising of cell photoelectric conversion efficiency.
[summary of the invention]
The objective of the invention is at above-mentioned existing problems, a kind of full-spectral-domain laminated silicon-base film solar cell is provided, this solar battery structure novelty, can expand the solar cell spectral response of near infrared region, maximally utilise solar spectrum, and realized the optimum current coupling of laminated cell, improved efficiency of solar cell.
Technical scheme of the present invention:
A kind of full-spectral-domain laminated silicon-base film solar cell, be deposited on the substrate by the stack of three silicon-based thin film solar cells and make, wherein first p-i-n is the broad-band gap silicon-base thin-film battery, thin-film material is an amorphous silicon, nanocrystal silicon, non-crystal silicon carbon or amorphous silica, band gap is (1.7～2.0) eV, thickness is (100～250) nm, second p-i-n battery is the mid-gap silicon-based thin film solar cell, thin-film material is amorphous silicon germanium or microcrystal silicon, band gap is (1.1～1.6) eV, thickness is (200～2000) nm, the 3rd p-i-n battery is the narrow band gap silicon-based thin film solar cell, it adopts silicon, germanium alloy type low bandgap material is as absorbed layer, and wherein to account for the percent by volume of all material be 30%～80% to crystallised component; Band gap is that (0.66～1.1) eV, thickness are (1000～3000) nm.
The preparation method of described silicon, germanium alloy type low bandgap material is that high-voltage radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD), very high frequency plasma strengthen chemical vapour deposition (CVD) (VHF-PECVD), hot-wire chemical gas-phase deposition (HWCVD) or plasma assisted reaction heat chemical vapour deposition process.
The order that described three silicon-based thin film solar cells stack is deposited on the substrate is: when substrate was glass or transparent plastic, the sedimentary sequence of hull cell was that broad-band gap silicon-base thin-film battery, second p-i-n battery are that mid-gap silicon-based thin film solar cell and the 3rd p-i-n battery are the narrow band gap silicon-based thin film solar cells for first p-i-n; When substrate was stainless steel or opaque plastics, the sedimentary sequence of hull cell was opposite.
Operation principle of the present invention: the 3rd p-i-n battery adopts the end battery obsorbing layer of low bandgap material as many knot laminated cells, this material is the silicon with to a certain degree crystallization, germanium alloy intrinsic absorbed layer, the ratio that crystallised component accounts for all material is 30%～80%, we are referred to as the microcrystal silicon germanium material, by adjusting the Ge content in the material, obtain the low bandgap material of band gap width less than 1.1eV, and can obtain theoretical boundary is the microcrystalline germanium material of 0.66eV, utilize the novel low bandgap material of this band gap, further absorb the near infrared region of solar spectrum medium wavelength greater than 1100nm less than 1.1eV.The present invention be more particularly directed to a kind of silicon, germanium alloy type narrow band gap intrinsic layer, this intrinsic layer almost can absorb whole solar spectrums, makes the silicon-based thin film solar cell spectral response extend near infrared region, thereby improves the photoelectric conversion efficiency of solar cell.
The invention has the beneficial effects as follows: this solar battery structure novelty, adopt the end battery obsorbing layer of low bandgap material as many knot laminated cells, by with the combination of other silica-base film alloy material, the band gap that makes different absorbed layer materials is 2.0eV～0.66eV, can realize the electric current optimum Match of laminated cell, expanded the spectral response of silicon-based thin film solar cell near infrared region, realize the full spectral domain response of silicon-base thin-film battery to solar spectrum 300nm～1800nm, utilize solar spectrum more fully, improved the photoelectric conversion efficiency of battery.
[description of drawings]
Fig. 1 is that substrate is the full-spectral-domain laminated silicon-base film solar cell structural representation of clear glass.
Fig. 2 is that substrate is stainless full-spectral-domain laminated silicon-base film solar cell structural representation.
Among the figure: 1. the p type doped layer p1 of electrode 3. broad-band gap batteries before the substrate 2.
4. the n type doped layer n1 of broad-band gap intrinsic absorbed layer i1 5. broad-band gap batteries
6. the p type doped layer p2 7. mid-gap intrinsic absorbed layer i2 of mid-gap battery
8. the p type doped layer p3 of the n type doped layer n2 9. narrow band gap batteries of mid-gap battery
10. n type doped layer n3 12. back electrodes of narrow band gap intrinsic absorbed layer i3 11. narrow band gap batteries
[embodiment]
Embodiment 1:
Fig. 1 is that substrate is the full-spectral-domain laminated silicon-base film solar cell structural representation of clear glass, comprise glass substrate 1, preceding electrode 2 and back electrode 12 among the figure, it adopts the battery structure of three knot laminations, first p-i-n battery the 3,4, the 5th wherein, the broad-band gap silicon-based thin film solar cell, wherein broad-band gap intrinsic absorbed layer i14 employing band gap is the broad-band gap amorphous silicon material of 1.8eV, and thickness is 150nm; Second p-i-n battery the 6,7, the 8th, the mid-gap silicon-based thin film solar cell, wherein mid-gap intrinsic absorbed layer i27 employing band gap is the amorphous silicon germanium material of 1.5eV, thickness is 400nm; The 3rd p-i-n battery the 9,10, the 11st, the narrow band gap silicon-based thin film solar cell, wherein narrow band gap intrinsic absorbed layer i310 employing band gap is the microcrystal silicon germanium material of 0.9eV, thickness is 1500nm.
The narrow band gap microcrystal silicon germanium material that relates among this embodiment adopts the preparation of plasma assisted reaction heat CVD technology, is 250～400 ℃ down preparations with the chemical reaction of fluoridizing germanium at depositing temperature by disilane promptly.The microcrystal silicon germanium material crystallization rate (crystallised component accounts for the volume ratio of all material) that makes is between 50%～60%, and by adjusting the concentration that germanium atom incorporates film, obtaining band gap is the microcrystal silicon germanium material of 0.9eV.Testing result shows: introduce the end battery obsorbing layer of narrow band gap microcrystal silicon germanium material as three knot stacked solar cell, cascade solar cells, can make the spectral response range of silicon-based thin film solar cell expand to 1380nm, battery conversion efficiency surpasses 11%.
Embodiment 2:
Same employing substrate is the full-spectral-domain laminated silicon-base film solar cell of clear glass, as shown in Figure 1, difference from Example 1 is: in first p-i-n battery 3,4,5, it is the broad-band gap amorphous silicon material of 1.7eV that broad-band gap intrinsic absorbed layer i14 adopts band gap, and thickness is 200nm; In second p-i-n battery 6,7,8, it is the amorphous silicon germanium material of 1.1eV that mid-gap intrinsic absorbed layer i27 adopts band gap, and thickness is 1500nm; In the 3rd the p-i-n battery 9,10,11, it is the microcrystal silicon germanium material of 0.8eV that narrow band gap intrinsic absorbed layer i310 adopts band gap, and thickness is 2500nm.
The narrow band gap microcrystal silicon germanium material that relates among this embodiment, adopt very high frequency plasma to strengthen the preparation of chemical vapour deposition (CVD) (VHF-PECVD) technology, be that silane, germane, hydrogen gas mixture are (180～250) ℃ preparation down at depositing temperature, volumetric flow of gas percentage is: silane accounts for (1～5) %, germane accounts for (0.1～1) %, and hydrogen is surplus; The microcrystal silicon germanium material crystallization rate (crystallised component accounts for the volume ratio of all material) for preparing is between 40%～70%, and by adjusting the concentration that germanium atom incorporates film, obtaining band gap is the microcrystal silicon germanium material of 0.9eV.Testing result shows: introduce the end battery obsorbing layer of narrow band gap microcrystal silicon germanium material as three knot stacked solar cell, cascade solar cells, can make the spectral response range of silicon-based thin film solar cell expand to 1550nm, battery conversion efficiency surpasses 12%.
Embodiment 3
Fig. 2 is that substrate is stainless full-spectral-domain laminated silicon-base film solar cell structural representation, comprise at the bottom of the stainless steel lining 1 among the figure, preceding electrode 2 and back electrode 12, it adopts the battery structure of three knot laminations, the sedimentary sequence of battery is opposite with embodiment 1, that is: at first the deposition first p-i-n battery the 9,10, the 11st, the narrow band gap silicon-based thin film solar cell, wherein narrow band gap intrinsic absorbed layer i310 employing band gap is the microcrystal silicon germanium material of 0.8eV, and thickness is 2500nm; Second p-i-n battery the 6,7, the 8th, the mid-gap silicon-based thin film solar cell, wherein mid-gap intrinsic absorbed layer i27 employing band gap is the microcrystal silicon material of 1.1eV, thickness is 1500nm; The 3rd p-i-n battery the 3,4, the 5th, the broad-band gap silicon-based thin film solar cell, wherein broad-band gap intrinsic absorbed layer i14 employing band gap is the amorphous silicon material of 1.7eV, thickness is 200nm.
Identical among the preparation method of the narrow band gap microcrystal silicon germanium material that relates among this embodiment and the embodiment 1.
Claims (3)
1. full-spectral-domain laminated silicon-base film solar cell, be deposited on the substrate by the stack of three silicon-based thin film solar cells and constitute, wherein first p-i-n is the broad-band gap silicon-base thin-film battery, thin-film material is an amorphous silicon, nanocrystal silicon, non-crystal silicon carbon or amorphous silica, band gap is (1.7～2.0) eV, thickness is (100～250) nm, second p-i-n battery is the mid-gap silicon-based thin film solar cell, thin-film material is amorphous silicon germanium or microcrystal silicon, band gap is (1.1～1.6) eV, thickness is (200～2000) nm, it is characterized in that: the 3rd p-i-n battery is the narrow band gap silicon-based thin film solar cell, it adopts silicon, germanium alloy type low bandgap material is as absorbed layer, and wherein to account for the percent by volume of all material be 30%～80% to crystallised component; Band gap is that (0.66～1.1) eV, thickness are (1000～3000) nm.
2. full-spectral-domain laminated silicon-base film solar cell according to claim 1 is characterized in that: the preparation method of described silicon, germanium alloy type low bandgap material is that high-voltage radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD), very high frequency plasma strengthen chemical vapour deposition (CVD) (VHF-PECVD), hot-wire chemical gas-phase deposition (HWCVD) or plasma assisted reaction heat chemical vapour deposition process.
3. according to the said full-spectral-domain laminated silicon-base film solar cell of claim 1, it is characterized in that: the order that described three silicon-based thin film solar cells stack is deposited on the substrate is: when substrate was glass or transparent plastic, the sedimentary sequence of hull cell was that broad-band gap silicon-base thin-film battery, second p-i-n battery are that mid-gap silicon-based thin film solar cell and the 3rd p-i-n battery are the narrow band gap silicon-based thin film solar cells for first p-i-n; When substrate was stainless steel or opaque plastics, the sedimentary sequence of hull cell was opposite.
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| CN102751372A (en) * | 2012-07-04 | 2012-10-24 | 圣睿太阳能科技（镇江）有限公司 | a-Si/muc-SiGe laminated solar cell with N-I-P tunnel junction and manufacture method thereof |
| CN109039259B (en) * | 2018-08-17 | 2020-03-20 | 常州大学 | Double-sided photovoltaic power generation system with trapezoidal infrared absorption |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420570A (en) * | 2002-12-30 | 2003-05-28 | 南开大学 | Wide frequency domain low-temp. laminated silicon based thin film solar cell |
| CN2593368Y (en) * | 2002-12-30 | 2003-12-17 | 南开大学 | Wide-range low-temperature laminated silicon based thin film solar cell |
| CN1938866A (en) * | 2004-03-31 | 2007-03-28 | 罗姆股份有限公司 | Laminate type thin-film solar cell and production method therefor |
| CN101373799A (en) * | 2008-08-07 | 2009-02-25 | 西南技术物理研究所 | Double-layer doping-layer silicon-based film solar cell |
| CN101540345A (en) * | 2009-04-24 | 2009-09-23 | 江苏工业学院 | Nanometer silica film three-layer stacked solar cell and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420570A (en) * | 2002-12-30 | 2003-05-28 | 南开大学 | Wide frequency domain low-temp. laminated silicon based thin film solar cell |
| CN2593368Y (en) * | 2002-12-30 | 2003-12-17 | 南开大学 | Wide-range low-temperature laminated silicon based thin film solar cell |
| CN1938866A (en) * | 2004-03-31 | 2007-03-28 | 罗姆股份有限公司 | Laminate type thin-film solar cell and production method therefor |
| CN101373799A (en) * | 2008-08-07 | 2009-02-25 | 西南技术物理研究所 | Double-layer doping-layer silicon-based film solar cell |
| CN101540345A (en) * | 2009-04-24 | 2009-09-23 | 江苏工业学院 | Nanometer silica film three-layer stacked solar cell and preparation method thereof |
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