Embodiment
Below in conjunction with accompanying drawing and specific embodiment technical scheme of the present invention is carried out detailed explanation.
The present invention upgrades to amorphous silicon (or amorphous silicon germanium)/crystalline/micro-crystalline silicon laminated solar battery or amorphous silicon/amorphous silicon (or amorphous silicon germanium)/microcrystal silicon three knot stacked solar cell, cascade solar cells with the single chamber PECVD systems produce amorphous silicon film solar battery of the single-ended introducing of reacting gas of industrialization.This invention can obtain the solar cell of high open circuit voltage, and the conversion efficiency of battery is improved.
Amorphous silicon/amorphous silicon laminated battery of buying with the ability company production line from Tianjin below is that example explains that the present invention proposes the micro crystal silicon solar battery of this battery and narrow band gap is formed the method for the technology upgrading of multijunction solar cell, improves the photoelectric conversion efficiency of battery.The performance parameter of the battery of can company from Tianjin directly buying on the production line is: short-circuit current density (Jsc)=5.12mA/cm
2, open circuit voltage (Voc)=1.681V, fill factor, curve factor (FF)=0.739, efficient (Efficiency)=6.36% (see figure 1).
At first provide two different hydro Cement Composite Treated by Plasma technology.
Embodiment 1:
The condition that a kind of hydrogen plasma is handled is: hydrogen flowing quantity is 190SCCM in the reaction gas, and the reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 5s.Deposit crystallite n layer subsequently, reaction condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 170SCCM, and the phosphine flow is 7SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.8%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane; Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Resulting battery behavior is as shown in Figure 2: short-circuit current density (Jsc)=6.63mA/cm
2, open circuit voltage (Voc)=1.65V, fill factor, curve factor (FF)=0.66, efficient (Efficiency)=7.22%, efficient has improved 13.5%.Battery at the bottom of deposition micro crystal silicon on the basis of this battery at first deposits crystallite P layer, and reaction condition is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time 2.5 minutes.Deposit crystallite i layer then, reaction condition is: silane flow rate is 16SCCM, and hydrogen flowing quantity is 360SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 4.37%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.88W/cm
2, the aura stimulating frequency is 75MHz, feeds the method for silane behind the earlier logical hydrogen aura of employing, sedimentation time 80 minutes.Last deposited amorphous n layer, reaction condition is following: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.The characteristic of the three knot laminated cells that obtain is as shown in Figure 3: short-circuit current density (Jsc)=5.72mA/cm
2, open circuit voltage (Voc)=1.99V, fill factor, curve factor (FF)=0.68, efficient (Efficiency)=7.72%, efficient has improved 21.4%.
Embodiment 2:
A kind of hydrogen plasma treatment conditions are: hydrogen flowing quantity is 190SCCM in the reaction gas, and the reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 30s.Deposit the crystallite n layer the same with last a kind of method subsequently, reaction condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 170SCCM, and the phosphine flow is 7SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.8%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.The characteristic of resulting battery is as shown in Figure 4: short-circuit current density (Jsc)=6.81mA/cm
2, open circuit voltage (Voc)=1.68V, fill factor, curve factor (FF)=0.65, efficient (Efficiency)=7.37%, efficient has improved 15.9%.Battery at the bottom of deposition micro crystal silicon on the basis of this battery.At first deposit crystallite P layer, reaction condition is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time 2.5 minutes.Deposit crystallite i layer then, reaction condition is: silane flow rate is 16SCCM, and hydrogen flowing quantity is 360SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 4.37%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.88W/cm
2, the aura stimulating frequency is 75MHz, feeds the method for silane behind the earlier logical hydrogen aura of employing, sedimentation time 80 minutes.Last deposited amorphous n layer, reaction condition is following: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.The characteristic of the three knot laminated cells that obtain is as shown in Figure 5: short-circuit current density (Jsc)=5.51mA/cm
2, open circuit voltage (Voc)=2.12V, fill factor, curve factor (FF)=0.72, efficient (Efficiency)=8.44%, efficient has improved 32.7%.
Provide the deposition technique of two different crystallite n layers below.
Embodiment 3:
At first carry out hydrogen plasma and handle, reaction condition is: hydrogen flowing quantity is 190SCCM in the reaction gas.Reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 30s.Deposit crystallite n layer then, sedimentary condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 170SCCM, and the phosphine flow is 10SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.7%, phosphorous gas is phosphorus dopant concentration of volume percent 1.4% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Then, battery at the bottom of deposition micro crystal silicon on the basis of this battery.At first deposit crystallite P layer, reaction condition is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time 2.5 minutes.Deposit crystallite i layer then, reaction condition is: silane flow rate is 16SCCM, and hydrogen flowing quantity is 360SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 4.37%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.88W/cm
2, the aura stimulating frequency is 75MHz, feeds the method for silane behind the earlier logical hydrogen aura of employing, sedimentation time 80 minutes.Last deposited amorphous n layer, reaction condition is following: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.The characteristic of the three knot laminated cells that obtain is as shown in Figure 6: short-circuit current density (Jsc)=5.32mA/cm
2, open circuit voltage (Voc)=2.05V, fill factor, curve factor (FF)=0.73, efficient (Efficiency)=7.93%, efficient has improved 24.7%.
Embodiment 4:
At first carry out hydrogen plasma and handle, reaction condition is: hydrogen flowing quantity is 190SCCM in the reaction gas.Reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 30s.Deposit crystallite n layer then, sedimentary condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 190SCCM, and the phosphine flow is 7SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.4%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura driving frequency is 75MHz.Sedimentation time is 3.25 minutes.Then, battery at the bottom of deposition micro crystal silicon on the basis of this battery.At first deposit crystallite P layer, reaction condition is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time 2.5 minutes.Deposit crystallite i layer then, reaction condition is: silane flow rate is 16SCCM, and hydrogen flowing quantity is 360SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 4.37%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.88W/cm
2, the aura stimulating frequency is 75MHz, feeds the method for silane behind the earlier logical hydrogen aura of employing, sedimentation time 80 minutes.Last deposited amorphous n layer, reaction condition is following: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.The characteristic of the three knot laminated cells that obtain is as shown in Figure 7: short-circuit current density (Jsc)=5.59mA/cm
2, open circuit voltage (Voc)=1.99V, fill factor, curve factor (FF)=0.68, efficient (Efficiency)=7.53%, efficient has improved 18.4%.
Provide the deposition technique of the P layer of battery at the bottom of two different microcrystal silicons below.
Embodiment 5:
At first carry out hydrogen plasma and handle, reaction condition is: hydrogen flowing quantity is 190SCCM in the reaction gas.Reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 30s.Deposit crystallite n layer then, reaction condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 170SCCM, and the phosphine flow is 7SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.8%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane; Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Battery at the bottom of the deposition micro crystal silicon again, the sedimentary condition of its P layer is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz.Sedimentation time is 3 minutes.Deposit crystallite i layer then, reaction condition is: silane flow rate is 16SCCM, and hydrogen flowing quantity is 360SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 4.37%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.88W/cm
2, the aura stimulating frequency is 75MHz, feeds the method for silane behind the earlier logical hydrogen aura of employing, sedimentation time 80 minutes.Last deposited amorphous n layer, reaction condition is following: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.The characteristic of the three knot laminated cells that obtain is as shown in Figure 8: short-circuit current density (Jsc)=5.60mA/cm
2, open circuit voltage (Voc)=2.07V, fill factor, curve factor (FF)=0.70, efficient (Efficiency)=8.10%, efficient has improved 27.3%.
Embodiment 6:
At first carry out hydrogen plasma and handle, reaction condition is: hydrogen flowing quantity is 190SCCM in the reaction gas, and the reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 30s.Deposit crystallite n layer then, sedimentary condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 170SCCM, and the phosphine flow is 7SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.8%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane; Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Battery at the bottom of the deposition micro crystal silicon again.The sedimentary condition of P layer is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz.Sedimentation time is 2 minutes.Deposit crystallite i layer then, reaction condition is: silane flow rate is 16SCCM, and hydrogen flowing quantity is 360SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 4.37%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.88W/cm
2, the aura stimulating frequency is 75MHz, feeds the method for silane behind the earlier logical hydrogen aura of employing, sedimentation time 80 minutes.Last deposited amorphous n layer, reaction condition is following: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.The characteristic of the three knot laminated cells that obtain is as shown in Figure 9: short-circuit current density (Jsc)=5.01mA/cm
2, open circuit voltage (Voc)=2.08V, fill factor, curve factor (FF)=0.68, efficient (Efficiency)=7.10%, efficient has improved 11.6%.
Provide battery i layer deposition techniques at the bottom of two different microcrystal silicons below.
Embodiment 7:
At first carry out hydrogen plasma and handle, reaction condition is: hydrogen flowing quantity is 190SCCM in the reaction gas, and the reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 30s.Deposit crystallite n then, reaction condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 170SCCM, and the phosphine flow is 7SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.8%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane; Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Deposit crystallite P layer then, reaction condition is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Deposit crystallite i again, deposit the n layer at last, its sedimentary condition is: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.Wherein the sedimentary condition of i layer is that silane flow rate is 20.3SCCM, and hydrogen flowing quantity is 329.7SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 5.8%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.63W/cm
2, the aura driving frequency is 75MHz.The characteristic corresponding silane concentration SC=5.8% shown in figure 10 of the three knot laminated cells that obtain): short-circuit current density (Jsc)=5.38mA/cm
2, open circuit voltage (Voc)=2.12V, fill factor, curve factor (FF)=0.70, efficient (Efficiency)=7.99%, efficient has improved 25.6%.
Embodiment 8:
At first carry out hydrogen plasma and handle, reaction condition is: hydrogen flowing quantity is 190SCCM in the reaction gas, and the reaction pressure in the reaction chamber remains on 0.7Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, aura 30s.Deposit crystallite n then, reaction condition is: silane flow rate is 7SCCM, and hydrogen flowing quantity is 170SCCM, and the phosphine flow is 7SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 3.8%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane; Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.45W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Deposit crystallite P layer then, reaction condition is: silane flow rate is 2SCCM, and hydrogen flowing quantity is 170SCCM, and the borine flow is 10SCCM (dilution of 0.1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 1.1%, boron-containing gas is a boron dope agent concentration of volume percent 0.5% with the ratio of silane; Reaction pressure in the reaction chamber remains on 2.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.5W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 3 minutes.Deposit crystallite i again, deposit the n layer at last, sedimentary condition is: silane flow rate is 15SCCM, and hydrogen flowing quantity is 85SCCM, and the phosphine flow is 15SCCM (dilution of 1% hydrogen), and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 15%, phosphorous gas is phosphorus dopant concentration of volume percent 1% with the ratio of silane.Reaction pressure in the reaction chamber remains on 1.5Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.375W/cm
2, the aura stimulating frequency is 75MHz, sedimentation time is 2 minutes.Wherein the sedimentary condition of i layer is that silane flow rate is 21SCCM, and hydrogen flowing quantity is 329SCCM, and corresponding silane concentration of volume percent SC is ([SiH
4]/([SiH
4]+[H
2])) 6%; Reaction pressure in the reaction chamber remains on 1.8Torr, and hot trap heating-up temperature remains on 280 ℃, sets glow power 0.63W/cm
2, the aura stimulating frequency is 75MHz.The characteristic (corresponding silane concentration SC=6%) shown in figure 10 of the three knot laminated cells that obtain: short-circuit current density (Jsc)=5.58mA/cm
2, open circuit voltage (Voc)=2.14V, fill factor, curve factor (FF)=0.70, efficient (Efficiency)=8.33%, efficient has improved 31%.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.