CN101950774A - Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery - Google Patents
Manufacturing method of GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery Download PDFInfo
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Abstract
The invention discloses a manufacturing method of a GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery. By utilizing a wafer bonding method, the GaInP/GaAs/InGaAsP/InGaAs four-junction solar battery is integrated by a GaInP/GaAs double-junction solar battery growing based on a GaAs substrate and a InGaAsP/InGaAs double-junction solar battery growing based on an InP substrate; by utilizing the InP as a supporting substrate, the four-junction solar battery with respective band gap energies of 1.9/1.4/1.05/0.72 eV is realized, sunlight full spectral absorption and energy conversion are realized to a greater degree, and 32.8 percent of efficiency is realized in irradiation of AM1.5G and under the sun. Based on the development of two kinds of double-junction batteries, the bonded four-junction solar battery reduces the shortages of high cost caused by utilizing a plurality of different substrates in a mechanical cascade solar battery system and complex optical system and optical loss in an optical integrated battery, and effectively solves the problem of lattice mismatching of growing a uniwafer four-junction cascade semiconductor solar battery material. The high voltage and low current outputs are realized and the resistance consumption in a high concentrator battery is reduced.
Description
Technical field
The present invention relates to the photovoltaic memory device that solar energy utilizes, relate in particular to a kind of structural design and device preparation of four-junction solar battery, belong to the solar-photovoltaic technology field.
Background technology
Under the energy crisis of the eighties of last century initiation seventies stimulated, also under the demand pull of spacecraft energy resource system, the photovoltaic technology field constantly made a breakthrough.Crystal silicon solar energy battery, non-crystal silicon solar cell, amorphous silicon thin-film solar cell, III-V compound semiconductor solar cell, II-VI compound semiconductor polycrystal film solar cell etc., increasing solar battery technology reaches its maturity.Improving constantly and the lasting reduction of manufacturing cost of photoelectric conversion efficiency makes photovoltaic technology all obtain using widely in space and ground.Look back photovoltaic technology in nearest 10 years development, aspect the efficient raising, the solar battery structure of tying tandem type is the most noticeable more.The average efficiency of InGaP/ (In) GaAs/Ge three knot tandem solar cell large-scale production in 2007 is near 30%.Under 240 times of optically focused, the lab A M1.5D efficient of this multijunction solar cell has surpassed 40%.In theory, footing is many more, and efficient is high more.But in practice, be difficult to find so desirable collocation on band gap width, two kinds of materials that lattice constant is mated are again very much realized the entire cascaded battery.Therefore, present multijunction cell structure mainly contains two kinds of thinkings: the one, and pay the utmost attention to lattice match and photoelectric current coupling is placed on less important position.Adopt the design of lattice match, the efficient of two knot GaInP/GaAs batteries has reached more than 30%.But the battery structure of lattice match has limited the coupling of the photoelectric current of sunlight because its band-gap energy of determining, makes it can not realize full spectral absorption utilization to solar cell.For example, for the GaInP/GaAs/Ge three-junction solar battery of lattice match, the density of photocurrent on the end battery Ge is the twice of last two-layer cell photoelectric current density, thereby has limited the lifting of efficient.The 2nd, the photoelectric current of paying the utmost attention to multijunction structure mates and the growth pattern of employing lattice mismatch, since 2005, several in the world famous seminar, such as NREL, the Toyota of Emcore and Japan, Sharp etc. pay close attention to the research of the solar battery structure of lattice mismatch more and more.By the adjustment of band-gap energy, utilize inversion method growth InGaAs/ (In) GaAs/InGaP battery efficient from 2007 38.9% (81 times of optically focused, AM1.5D) bring up to 2008 40.8% (326 times of optically focused, AM1.5G).The Eicke professor Weber leader's of nearest German fraunhofer research institute research group has brought up to 41.1% with three knot GaInP/GaInAs/Ge efficiency of solar cell.
However, the structural design of lattice mismatch depends on high-quality material growth, and big lattice mismatch must bring misfit dislocation, thereby increases non-radiative compound, reduction battery efficiency greatly.This caused direct growth four the knot tandem cells efficient on the contrary than three the knot efficient low.And according to the Shockley-Quisser model, four ligament crack energy are that the solar cell of 1.9/1.4/1.05/0.67eV can obtain to surpass 45% conversion efficiency, compare the advantage that has on the very high efficient with the binode GaAs/InGaAs battery that proposes than Emcore company under a same bonding technology.Simultaneously, because four junction structures more can be realized high voltage, low current output, can effectively reduce the resistance heat loss in the superelevation times concentrator solar cell, and superelevation times concentrator cell can reduce the solar cell cost widely, thereby promotes for the progress of III-V compound semiconductor solar cell aspect industrialization played greatly.
Based on the restriction in the material growth of the solar cell of lattice mismatch and the needs of the above battery development of four knots, the method by the extension Direct Bonding realizes that integrated being proved to be of direct monolithic multijunction cell of big mismatched lattices material has very big potentiality.Utilize the extension bonding not only can solve the material growth difficult problem that lattice mismatch brings, but also can use the Si substrate to replace expensive InP or GaAs, thereby reduce the battery cost.In the development of four junction batteries, the scientists of U.S.'s Boeing-spectrum company and Caltech has proposed the method for InGaAsP/InGaAs (1.0/0.72eV) bonding of will grow on binode GaInP/GaAs battery on the Ge substrate and the InP substrate, to realize monolithic four knot GaInP/GaAs/[Ge/InP bonding interfaces]/InGaAsP/InGaAs is integrated.Though used the material structure of lattice match, Ge/InP can absorb the sunlight of energy below 1.42eV, thereby reduces the efficient of InGaAsP/InGaAs battery.Therefore, must obtain the Ge thin layer before bonding, this can increase the difficulty in process of battery development greatly.Adopt to be inverted growth in addition, to carry out the method for bonding technology then, also can obtain four junction batteries with the solar spectrum coupling, but increase by a step substrate desquamation technology, not only increased the battery cost of manufacture, also increased the factor that influences battery efficiency.
Summary of the invention
In view of above-mentioned be that the photovoltaic technology of representative still can't reach the optimum Match with solar spectrum with InGaP/ (In) GaAs/Ge three knot tandem solar cell, and the objective difficulty of making lattice mismatch between the semi-conducting material that the above solar cell of monolithic cascade three knots exists, the objective of the invention is to propose a kind of manufacture method of four knot GaInP/GaAs/InGaAsP/InGaAs solar cells, two knot cascade solar cell photoelectric conversion efficiencys were higher relatively in the past inheriting, stable, on the basis of life-span length, prepare four statement of account sheet efficient solar batteries, to obtain high voltage, low current output, thereby effectively reduce the ohmic loss in the superelevation times concentrator solar cell, realize higher photoelectric conversion efficiency.
The technical scheme that realizes purpose of the present invention is as follows:
The manufacture method of four knot GaInP/GaAs/InGaAsP/InGaAs solar cells is characterized in that: will be integrated into four knot GaInP/GaAs/InGaAsP/InGaAs solar cells in the bonding mode based on the GaInP/GaAs Double Junction Tandem Solar Cells of the lattice match of GaAs substrate growth with based on the InGaAsP/InGaAs Double Junction Tandem Solar Cells of the lattice match of InP substrate growth.
Further, the manufacture method of above-mentioned four knot GaInP/GaAs/InGaAsP/InGaAs solar cells comprises the steps:
Step 1: utilize grow on the GaAs substrate GaInP/GaAs Double Junction Tandem Solar Cells epitaxial wafer of lattice match of metal-organic chemical vapor deposition equipment method, obtaining band-gap energy is the battery combination of 1.9/1.4eV;
Step 2: utilize grow on the InP substrate InGaAsP/InGaAs Double Junction Tandem Solar Cells epitaxial wafer of lattice match of metal-organic chemical vapor deposition equipment method, obtaining band-gap energy is the battery combination of 1.05/0.72eV; And wear knot then at battery grown on top InP, with InP as bonded layer;
Step 3: with the GaInP/GaAs Double Junction Tandem Solar Cells substrate thinning of step 1 growth, and with the InP substrate on the InGaAsP/InGaAs Double Junction Tandem Solar Cells end face bonding of growing, its bonded interface is: GaAs/InP.
Further, the manufacture method of aforementioned four knot GaInP/GaAs/InGaAsP/InGaAs solar cells, wherein the apical growth GaAs of the GaInP battery on the GaAs substrate wears knot then after the step 1.
Further, the manufacture method of aforementioned four knot GaInP/GaAs/InGaAsP/InGaAs solar cells, wherein after the step 3, the packaging technology step that also comprises a series of power outputs, form factor and be suitable for installing is to finish the making of four-junction solar battery.
The proposition of manufacture method of the present invention compares to its outstanding effect of prior art and is:
At first, method by wafer bonding, overcome the contradiction between photoelectric current coupling and the lattice match, constitute the solar cell of cascade with the different semi-conducting material of multiple band gap width, absorb the solar spectrum that is complementary most with its material gap length, reduce the heat energy loss in the opto-electronic conversion, realize the absorption of the full spectrum of sunlight to a greater extent, improve photoelectric conversion efficiency;
Secondly, two binode batteries all are lattice-matched growth, have avoided not producing dislocation because of lattice matches when causing the epitaxial loayer Stress Release, have eliminated the factor to the device performance influence; Utilize the method for bonding that two kinds of binode batteries are linked in addition, obtain not to be subjected to the four-junction solar battery of lattice match band and the restriction of currents match contradiction, forming band-gap energy is the optical absorption of 1.9/1.4/1.05/0.72eV, compares with three junction batteries, can improve 10% efficient.
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
Description of drawings
Fig. 1 is battery structure and the bonding schematic diagram thereof before and after the four-junction solar battery bonding of the present invention.
Embodiment
For making the above-mentioned purpose of the present invention, feature and advantage can more obvious easy understanding, below special in conjunction with the specific embodiment of the invention, be described in detail as follows:
1) growth of battery before the bonding
As shown in Figure 1, be the battery structure and the bonding schematic diagram thereof of GaInP/GaAs/ solar cell of the present invention and InGaAsP/InGaAs solar cell bonding front and back.Can be clear that by accompanying drawing: the binode battery is the GaAs battery of at first growing on the GaAs substrate, the GaInP battery of the lattice match of growing then; The InGaAs battery of the lattice match of on the InP substrate, growing earlier, the InGaAsP battery of the lattice match of growing then.Owing to all be to adopt lattice-matched growth, can not increase the difficulty of material growth because of lattice matches, can be because of the epitaxial loayer Stress Release does not produce dislocation yet, thus influence crystal mass, and then influence device performance; In addition, the apical growth GaAs of the GaInP battery on the GaAs substrate wears knot then, and the apical growth InP of the InGaAsP battery on the InP substrate wears knot then, to reduce bonded interface place resistance, avoids pressure drop at the interface bigger, influences battery performance.
2) bonding of wafer
Bonded interface is p+GaAs/n+InP among the present invention, and wherein, as the back of the body superficial layer of battery, InP is the top structure of InGaAsP battery behind the GaAs substrate thinning.GaAs need select doping content to be higher than 1.0 * 10
19P type substrate, substrate need be thinned to 10-30nm; The doping content of top layer n+InP need be higher than 1.0 * 10
19, thickness range: 15-30nm.Carry out bonding and annealing then to form excellent contact, reduce the influence of interface resistance, thereby obtain the less desirable bonded interface of interface resistance; Annealing temperature is at 400-550 ℃, and this temperature can not have influence on the quality and the device performance of material far below the material growth temperature.Afterwards, then finish cell preparation according to the battery process of standard, the packaging technology step that comprises a series of power outputs, form factor and be suitable for installing obtains the four-junction solar battery shown in Fig. 1 right side.
In sum, be detailed description to the present invention's one specific embodiment, this case protection range is not constituted any limitation, all employing equivalents or equivalence are replaced and the technical method of formation, all drop within the rights protection scope of the present invention.
Claims (4)
1. the manufacture method of four knot GaInP/GaAs/InGaAsP/InGaAs solar cells is characterized in that: will be integrated into four knot GaInP/GaAs/InGaAsP/InGaAs positive electricity ponds in the bonding mode based on the GaInP/GaAs Double Junction Tandem Solar Cells of the lattice match of GaAs substrate growth with based on the InGaAsP/InGaAs Double Junction Tandem Solar Cells of the lattice match of InP substrate growth.
2. the manufacture method of four knot GaInP/GaAs/InGaAsP/InGaAs solar cells according to claim 1 is characterized in that comprising the steps:
Step 1: utilize grow on the GaAs substrate GaInP/GaAs Double Junction Tandem Solar Cells epitaxial wafer of lattice match of metal-organic chemical vapor deposition equipment method, obtaining band-gap energy is the battery combination of 1.9/1.4eV;
Step 2: utilize grow on the InP substrate InGaAsP/InGaAs Double Junction Tandem Solar Cells epitaxial wafer of lattice match of metal-organic chemical vapor deposition equipment method, obtaining band-gap energy is the battery combination of 1.05/0.72eV;
Step 3: with the GaInP/GaAs Double Junction Tandem Solar Cells substrate thinning of step 1 growth, and with the InP substrate on the InGaAsP/InGaAs Double Junction Tandem Solar Cells end face bonding of growing, its bonded interface is: GaAs/InP.
3. the manufacture method of four knot GaInP/GaAs/InGaAsP/InGaAs solar cells according to claim 1, it is characterized in that: the apical growth GaAs of the GaInP battery after the step 1 on the GaAs substrate wears knot then, and the apical growth InP of the InGaAsP battery on the InP substrate wears knot then after the step 2.
4. the manufacture method of four knot GaInP/GaAs/InGaAsP/InGaAs solar cells according to claim 1, it is characterized in that: after the step 3, the packaging technology step that also comprises a series of power outputs, form factor and be suitable for installing is to finish the making of four-junction solar battery.
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| CN102184980A (en) * | 2011-04-02 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Wafer-bonding-based triple-junction solar cell and preparation method thereof |
| CN102244134A (en) * | 2011-08-02 | 2011-11-16 | 厦门市三安光电科技有限公司 | High efficient four junction solar cells and manufacturing method thereof |
| CN102270693A (en) * | 2011-07-15 | 2011-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multijunction laminated solar cell and manufacturing method thereof |
| CN102299159A (en) * | 2011-08-17 | 2011-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaAsP/InGaAs four-junction cascade solar battery and preparation method thereof |
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