CN204668317U - There is the silicon-based film solar cells of gradient-structure - Google Patents
There is the silicon-based film solar cells of gradient-structure Download PDFInfo
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Abstract
The utility model discloses a kind of silicon-based film solar cells with gradient-structure, comprise at least one pin tie at multi-knot thin film solar cell, the i layer in described pin knot is that crystal structure is identical and have the sandwich construction of Graded band-gap.The solar cell of this gradient-structure has wider energy spectrum, can absorb more sunlight and be converted into electric energy, forms larger current and improves the efficiency of thin-film solar cells.The technology controlling and process of the gradient-structure of the i layer simultaneously in described pin knot avoids the abnormal growth of crystal grain and the formation in hole and crack, to prepare fine and close, grain size uniform, controllable, the high-quality film better mated with sun power spectrum, meanwhile, gradient-structure is conducive to the abundant absorption to sunlight.Thus, the efficiency of thin-film solar cells is further increased.
Description
Technical field
The utility model relates to solar cell and has the thin-film solar cells of gradient-structure, particularly has the silicon-based film solar cells structure of gradient-structure.
Background technology
External solar cell research and production, roughly can be divided into three phases, namely have three generations's solar cell.
First generation solar cell is for representative substantially with the solar cell of monocrystalline silicon and the silica-based single constituent element of polycrystalline.Only pay attention to improve photoelectric conversion efficiency and large-scale production, there is high energy consumption, labour intensive, the problem such as unfriendly and high cost to environment, its price producing electricity is about 2 ~ 3 times of coal electricity; Until 2014, the output of first generation solar cell still accounts for the 80-90% of global solar battery total amount.
Second generation solar cell is thin-film solar cells, is the new technology grown up in recent years, and it pays attention to reduce the energy consumption in production process and process costs, and brainstrust is called green photovoltaic industry.Compare with polysilicon solar cell with monocrystalline silicon, the consumption of its film HIGH-PURITY SILICON is its 1%, simultaneously, low temperature (about about 200 DEG C) plasma enhanced chemical vapor deposition deposition technique, electroplating technology, printing technology is extensively studied and is applied to the production of thin-film solar cells.Owing to adopting glass, the stainless steel thin slice of low cost, macromolecule substrate, as baseplate material and low temperature process, greatly reduces production cost, and is conducive to large-scale production.The material of the thin-film solar cells of success research and development is at present: CdTe, and its photoelectric conversion efficiency is 16.5%, and commercial product is about about 12%; CulnGaSe (CIGS), its photoelectric conversion efficiency is 19.5%, and commercial product is about 12%; Amorphous silicon and microcrystal silicon, its photoelectric conversion efficiency is 8.3 ~ 15%, and commercial product is 7 ~ 12%, in recent years, due to the research and development of the thin-film transistor of LCD TV, amorphous silicon and microcrystalline silicon film technology have had significant progress, and are applied to silicon-based film solar cells.Focus around thin-film solar cells research is, exploitation is efficient, low cost, long-life photovoltaic solar cell.They should have following feature: low cost, high efficiency, long-life, material source are abundant, nontoxic, the relatively more good amorphous silicon thin-film solar cell of scientists.The thin-film solar cells accounting for lion's share is at present non-crystal silicon solar cell, is generally pin structure battery, and Window layer is the P-type non-crystalline silicon of boron-doping, then deposits the unadulterated i layer of one deck, then deposits the N-type amorphous silicon that one deck mixes phosphorus, and plated electrode.Brainstrust is estimated, because thin-film solar cells has low cost, high efficiency, the ability of large-scale production, at 10 ~ 15 years of future, thin-film solar cells will become the main product of global solar battery.
Amorphous silicon battery generally adopts PECVD (Plasma Enhanced Chemical VaporDeposition-plasma enhanced chemical vapor deposition) method that the gases such as high purity silane are decomposed and deposits.This kind of manufacture craft, can complete in multiple vacuum deposition chamber continuously aborning, to realize producing in enormous quantities.Due to deposition decomposition temperature low, can on glass, corrosion resistant plate, ceramic wafer, flexible plastic sheet deposit film, be easy to large areaization produce, cost is lower.The structure of the amorphous silicon based solar battery prepared on a glass substrate is: Glass/TCO/p-a-SiC/i-a-Si/n-a-Si/TCO, and the structure of the amorphous silicon based solar battery prepared at the bottom of stainless steel lining is: SS/ZnO/n-a-Si/i-a-Si/p-na-Si/ITO.
Internationally recognized amorphous silicon/microcrystalline silicon tandem solar cell is the next-generation technology of silicon-base thin-film battery, is the important technology approach realizing high efficiency, low cost thin-film solar cells, is the industrialization direction that hull cell is new.Microcrystalline silicon film has been adopted hydrogen PCVD since nineteen sixty-eight since 600 DEG C first preparation by Veprek and Maracek, people start there has been Preliminary study to its potential premium properties, until 1979, Usui and Kikuchi of Japan strengthens chemical vapour deposition technique by the process and low-temperature plasma adopting high hydrogen silicon ratio, prepare doped microcrystalline silicon, people just study microcrystalline silicon materials and application in solar cells thereof gradually.1994, Switzerland
m.J.Williams and M.Faraji team proposes to take microcrystal silicon as end battery first, and amorphous silicon is the concept of the laminated cell of top battery, and this battery combines the long-wave response of amorphous silicon good characteristic and microcrystal silicon and the advantage of good stability.The amorphous silicon/microcrystalline silicon tandem battery component sample efficiencies of Mitsubishi heavy industrys in 2005 and Zhong Yuan chemical company reaches 11.1% (40cm × 50cm) and 13.5% (91cm × 45cm) respectively.Japanese Sharp company realizes amorphous silicon/microcrystalline silicon tandem solar cell industryization in September, 2007 and produces (25MW, efficiency 8%-8.5%), Europe Oerlikon (Oerlikon) company announce in September, 2009 the most high conversion efficiency in its amorphous/crystallite lamination solar cell laboratory reach 11.9%, at 2010 6 in the solar cell exhibition " PVJapan 2010 " of Yokohama opening, Applied Materials (AMAT) announce that the conversion efficiency that the conversion efficiency of 0.1m × 0.1m module reaches 10.1%, 1.3m × 1.1m module reaches 9.9%.Improve the most effective approach of battery efficiency is improve the efficiency of light absorption of battery as far as possible.For silica-base film, low bandgap material is adopted to be inevitable approach.The low bandgap material adopted as Uni-Solar company is a-SiGe (amorphous silicon germanium) alloy, and their a-Si/a-SiGe/a-SiGe tri-ties laminated cell, small size battery (0.25cm
2) efficiency reaches 15.2%, stabilization efficiency reaches 13%, 900cm
2component efficiency reaches 11.4%, and stabilization efficiency reaches 10.2%, and product efficiency reaches 7%-8%.
For thin-film solar cells, a unijunction, there is no the silion cell of optically focused, in theory maximum electricity conversion be 31% (Shockley ?Queisser restriction).According to band-gap energy reduce order, the silion cell not having optically focused of binode, maximum electricity conversion rises to 41% in theory, and three knot reach 49%.Therefore, developing multi-knot thin film solar cell is the important channel promoting solar battery efficiency.For cadmium telluride diaphragm solar battery, the fusing point of the high or low band gap material matched with cadmium telluride is very low, and unstable, is difficult to form the efficient series-connected solar cells of many knots.For CIGS thin film solar cell, the high or low band gap material matched with CIGS is difficult to prepare, and also not easily forms the efficient series-connected solar cells of many knots.For silicon-based film solar cells, the band gap of crystalline silicon and amorphous silicon is 1.1eV and 1.7eV, and the band gap of nano-silicon changes between 1.1eV and 1.7eV according to the large I of crystallite dimension.Si based compound, the concentration as crystal Si1-xGex band gap (0≤X≤1) foundation Ge can change to 0.7eV from 1.1eV, and amorphous SiGe can 1.4, and Amorphous GaN is about 1.95eV, and this combination is just in time match with the spectrum of the sun.
On the other hand, how to absorb luminous energy fully, improve the electricity conversion of solar cell, allow electronic energy as much as possible be optically excited and to change electric energy into, like this, it is important that the level-density parameter of battery material and few defect cause pass.From technological layer, high-quality and the uniformity of film is ensured while the technological difficulties of thin film deposition are to realize high speed deposition, because film crystallite dimension, the base material of Growing Process of Crystal Particles and growth all has strong impact to the quality of film and uniformity, thus affects the performance of whole battery performance.In film Growing Process of Crystal Particles, due to the abnormal growth of crystal grain, cause grain size uneven, very easily form hole and crack.Be full of the compound that hole in film and crack add charge carrier, and cause leakage current, seriously reduce Voc and FF value.Therefore, solving this technical barrier, is the important channel of preparing efficient thin-film solar cell.
We are at patent ZL200910043930-4, from technical elements in ZL200910043931-9 and ZL200910226603-2, manufacture high efficiency a-Si/ μ C-Si, with a-Si/nC-Si/ μ C-Si binode and three knot silicon-based film solar cells, high density (HD) and hyperfrequency (VHF)-PECVD technology have been developed and for high-quality, the a-Si of large scale, a-SiGe, nC-Si, μ C-Si, A-SiC thin film deposition.Using a-SiC as Window layer, and p-type doping Si-rich silicon oxide film is used for central reflector layer between top a-Si and bottom μ c-Si battery and has been used for increasing the efficiency that a-Si/ μ C-Si binode and a-Si/nC-Si/ μ C-Si tri-tie silicon-based film solar cells.The CVD process optimization of high-quality B doping ZnO x, improves its mist degree and conductivity, and have studied other light capture technique.Three knot silicon-based film solar cells laboratory sample efficiency can reach 15%, have stabilization efficiency be greater than 10% and above business-like a-Si/ μ C-Si (1.1 meters of x1.3 rice) solar module prepare.
The application continues research on the basis of patent ZL200910043930-4, ZL200910043931-9 and ZL200910226603-2, aims to provide a kind of thin-film solar cells with gradient-structure.
Utility model content
The technical problems to be solved in the utility model is, for the problem of the defect that thin-film material mates with solar spectral energy gap, crystal grain is formed and produces in growth course that prior art exists, and how fully to absorb sunlight and to improve electricity conversion, the silicon-based film solar cells with gradient-structure is proposed.
For achieving the above object, the technical solution of the utility model is:
Have a silicon-based film solar cells for gradient-structure, comprise at least one pin and tie, the i layer in described pin knot is that crystal structure is identical and have the sandwich construction of Graded band-gap; Described sandwich construction from the first floor to last layer by high energy gap layer to low energy gap layer arrange, and arbitrary neighborhood two-layer between energy gap difference between 0.01 – 0.1eV.
Described sandwich construction is preferably selected from one of following five kinds of structures:
(1) gradient-structure of energy gap to be the amorphous SiC layer of 2.1-2.3eV to energy gap the be nanocrystalline SiC layer even transition of 1.8-2.1eV;
(2) gradient-structure of energy gap to be the amorphous Si layer of 1.7eV to energy gap the be nano-crystalline Si layer even transition of 1.7eV to 1.2eV;
(3) energy gap is the amorphous Si of 1.7eV to 1.2eV
1-xge
x(0≤X≤1) layer is the amorphous Si of 1.5eV to 1.2eV to energy gap
1-xge
xthe gradient-structure of (0≤X≤1) layer even transition;
(4) gradient-structure of energy gap to be the nano-crystalline Si layer of 1.7eV to 1.2eV to energy gap the be nano-crystalline Si layer even transition of 1.5eV to 1.1eV;
(5) gradient-structure of energy gap to be the nano-crystalline Si layer of 1.5eV to 1.2eV to energy gap the be crystallite Si layer even transition of 1.1eV.
Described gradient-structure refers to the sandwich construction with Graded band-gap.
The energy gap of described sandwich construction preferably evenly reduces according to the form of energy gap difference between 0.01 – 0.05eV, more preferably evenly reduces according to the form of energy gap difference between 0.01 – 0.02eV.
The gross thickness of described sandwich construction is preferably between 0.1 micron to 3 microns.
In described sandwich construction, the thickness of every one deck is preferably between 1nm-100nm, more preferably 1nm-10nm.
Can also insert the amorphous layer of at least one deck doping or undoped in the sandwich construction of described nanocrystalline and crystallite, described amorphous layer thickness is 1nm-10nm, and the amorphous layer of described doping is the amorphous layer that phosphorus or boron Erbium-doped are assorted.
Further explanation and explanation:
For silicon-based film solar cells, amorphous (referring to that grain size is from 0-1 nanometer), energy gap is 1.7eV, nanocrystalline (referring to that grain size is from 1-100 nanometer), regulate its energy gap of size of crystallite dimension can change between 1.7-1.1eV, crystallite (referring to that grain size is from 0.1 micron-several micron) is 1.1eV.Si based compound, the concentration as crystal Si1-xGex band gap (0≤X≤1) foundation Ge can change to 0.7eV from 1.1eV, and amorphous SiGe can 1.4, and Amorphous GaN is about 2.2eV, and nano-crystalline Si C can change to 2.1eV from 1.8eV.Therefore, for silicon-based film solar cells, its gradient-structure can be: Amorphous GaN (2.1-2.3eV) is transitioned into nano-crystalline Si C (1.8-2.1eV) and forms gradient-structure, amorphous Si (1.7eV) is transitioned into nano-crystalline Si (1.7eV to 1.2eV) and forms gradient-structure, amorphous Si1-xGex (0≤X≤1, 1.7eV to 1.2eV) be transitioned into amorphous Si1-xGex (0≤X≤1, 1.5eV to 1.2eV) form gradient-structure, nano-crystalline Si (1.7eV to 1.2eV) is transitioned into nano-crystalline Si (1.5eV to 1.1eV) and forms gradient-structure, nano-crystalline Si (1.5eV to 1.1eV) is transitioned into crystallite Si (1.1eV) and forms gradient-structure.
And there is by the standby many knots of sequential system that energy level falls progressively the thin-film solar cells of gradient-structure.Many knots of the present utility model have in the thin-film solar cells of gradient-structure, and utilizing the gradient-structure of wide gap material to do top electricity knot, is electric energy by the light energy conversion of short wavelength; Utilize the gradient-structure of arrowband material to do end electricity knot, speciality wavelength luminous energy can be converted into electric energy.Owing to more taking full advantage of the spectral domain of sunlight, the thin-film solar cells that many knots have gradient-structure has higher photoelectric conversion efficiency.If have in the thin-film solar cells of gradient-structure at many knots, between each knot with different energy gap width, add central reflector layer and incidence step by step and total reflection are carried out to the incident light of each wave band, increase its light path in the battery thus increase solar cell to the absorption of light, reaching the object that improve conversion efficiency.
Have in the thin-film solar cells of gradient-structure at many knots, the i layer in pin knot described in it adopts gradient-structure.This gradient-structure passes through PECVD by the material that energy gap is different, and magnetron sputtering, the techniques such as electron beam evaporation are made the mode of alternative stacked and formed.Gradient-structure change in elevation is determined by the energy gap difference made between material, is regulated by the energy gap size of its material that matches.Every grade of gradient-structure varying width regulates by the thickness forming same gap material.
Compared with prior art, the advantage of the application is:
The utility model is in multi-knot thin film solar cell, and the i layer employing crystal structure in described pin knot is identical and energy gap is different material forms gradient-structure.The solar cell of this gradient-structure has wider energy spectrum, can absorb more sunlight and be converted into electric energy, forms larger current and improves the efficiency of thin-film solar cells.The scope of Graded band-gap regulates by the energy gap of its material that matches.The even transition of Graded band-gap controls by its technological parameter.The technology controlling and process of the gradient-structure of the i layer simultaneously in described pin knot avoids the abnormal growth of crystal grain and the formation in hole and crack, to prepare fine and close, grain size uniform, controllable, the high-quality film better mated with sun power spectrum, meanwhile, gradient-structure is conducive to the abundant absorption to sunlight.Thus, the efficiency of thin-film solar cells is further increased.
Accompanying drawing explanation
Fig. 1 is that gradient-structure illustrates schematic diagram; Wherein 1 be high energy gap layer, 2 is multilayer transition layer that energy gap evenly reduces, and 3 is low energy gap layer.
Fig. 2 is many knots silicon-based film solar cells structural representation with gradient-structure;
Fig. 3 is the amorphous/crystallite binode silicon-based film solar cells structural representation with gradient-structure;
Fig. 4 is that the amorphous/crystallite/crystallite three with gradient-structure ties silicon-based film solar cells structural representation;
Fig. 5 is many knots silicon-based film solar cells preparation technology flow chart with gradient-structure;
Embodiment
Below in conjunction with drawings and Examples, the utility model is described further.
Have a silicon-based film solar cells for gradient-structure, comprise at least one pin and tie, the i layer in described pin knot is that crystal structure is identical and have the sandwich construction of Graded band-gap; As shown in Figure 1, described sandwich construction from the first floor to last layer by high energy gap layer to low energy gap layer arrange, and arbitrary neighborhood two-layer between energy gap difference between 0.01 – 0.1eV.
Described sandwich construction can be selected from one of following five kinds of structures:
(1) gradient-structure of energy gap to be the amorphous SiC layer of 2.1-2.3eV to energy gap the be nanocrystalline SiC layer even transition of 1.8-2.1eV;
(2) gradient-structure of energy gap to be the amorphous Si layer of 1.7eV to energy gap the be nano-crystalline Si layer even transition of 1.7eV to 1.2eV;
(3) energy gap is the amorphous Si of 1.7eV to 1.2eV
1-xge
x(0≤X≤1) layer is the amorphous Si of 1.5eV to 1.2eV to energy gap
1-xge
xthe gradient-structure of (0≤X≤1) layer even transition;
(4) gradient-structure of energy gap to be the nano-crystalline Si layer of 1.7eV to 1.2eV to energy gap the be nano-crystalline Si layer even transition of 1.5eV to 1.1eV;
(5) gradient-structure of energy gap to be the nano-crystalline Si layer of 1.5eV to 1.2eV to energy gap the be crystallite Si layer even transition of 1.1eV.
Described gradient-structure refers to the sandwich construction with Graded band-gap.
Embodiment 1:
As shown in Figure 2, for many knots silicon-based film solar cells with gradient-structure, described gradient-structure comprises: Amorphous GaN (2.3eV) is transitioned into nano-crystalline Si C (1.8eV), amorphous Si (1.7eV) is transitioned into nano-crystalline Si (1.2eV), amorphous Si1-xGex (0≤X≤1, 1.7eV) be transitioned into amorphous Si1-xGex (0≤X≤1, 1.2eV), nano-crystalline Si (1.7eV) is transitioned into nano-crystalline Si (1.1eV), nano-crystalline Si (1.5eV) is transitioned into crystallite Si (1.1eV), energy gap difference between arbitrary neighborhood is two-layer is 0.05eV.And there is by the standby many knots of sequential system that energy level falls progressively the thin-film solar cells of gradient-structure.
As shown in Figure 5, the manufacture method described in the silicon-based film solar cells of gradient-structure comprises:
(1) glass substrate is cleaned;
(2) on substrate, prepare electrode before TCO;
(3) adopt 355nm long wavelength laser that electrode segmentation before TCO is formed the electrode of sub-battery;
(4) glass substrate after scribing is cleaned again;
(5) on the glass substrate with conducting film, using plasma strengthens chemical vapor deposition method and prepares SiC, amorphous, nanocrystalline, microcrystal silicon, Si
1-xge
xfilm;
Described p-A-SiC contact layer deposition, related process parameters is:
Underlayer temperature 150 DEG C ~ 300 DEG C, SiH
4/ H
2volumetric flow of gas ratio is 0.5 ~ 5.0, CH
4/ SiH
4volumetric flow of gas ratio is 0.02 ~ 3.0, TMB/SiH
4volumetric flow of gas ratio is 0.01 ~ 2.0, and reaction chamber air pressure is 0.3mbar ~ 1.0mbar, and radio frequency power density is 10mW/cm
2~ 350mW/cm
2; Described p-A-SiC contact layer thickness is: 2nm ~ 10nm;
Described p-A-SiC Window layer deposition, related process parameters is:
Underlayer temperature 150 DEG C ~ 300 DEG C, SiH
4/ H
2volumetric flow of gas ratio is 0.05 ~ 5.0, CH
4/ SiH
4volumetric flow of gas ratio is 0.02 ~ 3.0, TMB/SiH
4volumetric flow of gas ratio is 0.01 ~ 3.0, and reaction chamber air pressure is 0.3mbar ~ 3.0mbar, and radio frequency power density is 10mW/cm
2~ 350mW/cm
2; Described p-A-SiC window layer thickness is: 2nm ~ 10nm;
Described p-A-SiC buffer layer deposition, related process parameters is:
Underlayer temperature 150 DEG C ~ 300 DEG C, SiH
4/ H
2volumetric flow of gas ratio is 0.02 ~ 5.0, CH
4/ SiH
4volume ratio is 0.1 ~ 2.0, and reaction chamber air pressure is 1.0mbar ~ 3.0mbar, and radio frequency power density is 10mW/cm
2~ 350mW/cm
2; Described p-A-SiC buffer layer thickness is: 5nm ~ 15nm;
Described lamination i-A-SiC intrinsic layer deposition, related process parameters is:
Underlayer temperature 150 DEG C ~ 300 DEG C, lamination quantity is 1 ~ 3 layer, and lamination gross thickness is 100 ~ 300nm, and hydrogen dilution compares SiH
4/ H
2be 0.2 ~ 5, reaction chamber air pressure is 0.3mbar ~ 2.0mbar, and radio frequency power density is 10mW/cm
2~ 350mW/cm
2; Described lamination i-A-SiC intrinsic layer thickness is: 100nm ~ 300nm; Nano-crystalline Si C (1.8-2.1eV) gradient-structure is transitioned into than forming Amorphous GaN (2.1-2.3eV) by adjustment hydrogen dilution.
Described amorphous Si (1.7eV) is transitioned into the gradient-structure of nano-crystalline Si (1.7eV to 1.2eV), amorphous silicon adopts 13.56-40.68MHz PECVD method to be deposit i-A-Si film under the condition of 160 – 200 DEG C in temperature, and hydrogen dilution compares SiH
4/ H
2be 0.2 ~ 5, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.Described nanocrystal silicon, adopt 13.56-40.68MHz PECVD method to be deposit nc-Si film under the condition of 160 – 200 DEG C in temperature, hydrogen dilution compares SiH
4/ H
2be 0.02 ~ 1, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.Nano-crystalline Si (1.7eV to 1.2eV) gradient-structure is transitioned into than forming amorphous Si (1.7eV) by adjustment hydrogen dilution.
Described amorphous Si1-xGex (0≤X≤1,1.7eV to 1.2eV) be transitioned into amorphous Si1-xGex (0≤X≤1,1.5eV to 1.2eV) gradient-structure that forms, it is characterized in that, amorphous Si1-xGex (0≤X≤1 of described high energy gap, 1.7eV to 1.2eV) adopt 13.56-40.68MHz PECVD method under temperature is the condition of 160 – 200 DEG C, deposit the amorphous Si1-xGex film of high energy gap, hydrogen dilution compares SiH
4+ GeH
4/ H
2be 0.2 ~ 5, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.The amorphous Si1-xGex (0≤X≤1,1.5eV to 1.2eV) of described low band gap, adopt 13.56-40.68MHz PECVD method to be deposit nc-Si film under the condition of 160 – 200 DEG C in temperature, hydrogen dilution compares SiH
4+ GeH
4/ H
2be 0.02 ~ 3, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.Be transitioned into than forming amorphous Si1-xGex (0≤X≤1,1.7eV to 1.2eV) gradient-structure that amorphous Si1-xGex (0≤X≤1,1.5eV to 1.2eV) forms by adjustment hydrogen dilution.
The gradient-structure that described nano-crystalline Si (1.7eV to 1.2eV)/nano-crystalline Si (1.5eV to 1.1eV) forms, it is characterized in that, described high energy gap nanocrystalline Si (1.7eV to 1.2eV) adopts 13.56-40.68MHz PECVD method to deposit under temperature is the condition of 160 – 200 DEG C, and hydrogen dilution compares SiH
4/ H
2be 0.05 ~ 1, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.The nano-crystalline Si (1.5eV to 1.1eV) of described low band gap, adopt 13.56-40.68MHz PECVD method to be deposit under the condition of 160 – 200 DEG C in temperature, hydrogen dilution compares SiH
4/ H
2be 0.01 ~ 0.5, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.By the gradient-structure that adjustment hydrogen dilution forms than formation nano-crystalline Si (1.7eV to 1.2eV)/nano-crystalline Si (1.5eV to 1.1eV).
Described nano-crystalline Si (1.5eV to 1.1eV) is transitioned into the gradient-structure that crystallite Si (1.1eV) forms, described nano-crystalline Si (1.5eV to 1.1eV) adopts 13.56-40.68MHz PECVD method to deposit under temperature is the condition of 160 – 200 DEG C, and hydrogen dilution compares SiH
4/ H
2be 0.01 ~ 0.5, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.Described crystallite Si (1.1eV), adopt 13.56-40.68MHz PECVD method to be deposit under the condition of 160 – 200 DEG C in temperature, hydrogen dilution compares SiH
4/ H
2be 0.01 ~ 0.05, reaction chamber air pressure is 0.3 ~ 2.0mbar, and radio frequency power density is 10 ~ 350mW/cm
2.Be transitioned into than forming nano-crystalline Si (1.5eV to 1.1eV) gradient-structure that crystallite Si (1.1eV) forms by adjustment hydrogen dilution.
Described p-type SiC, amorphous, nanocrystalline, microcrystal silicon, Si
1-xge
xfilm, adopt the assorted preparation of boron Erbium-doped, related process parameters is: adopt 13.56MHz-40.68MHz PECVD method, underlayer temperature 150 DEG C ~ 300 DEG C, TMB/SiH
4volumetric flow of gas ratio is 0.01 ~ 2.0, and reaction chamber air pressure is 0.3mbar ~ 3.0mbar, and radio frequency power density is 10mW/cm
2~ 350mW/cm
2; P-type doped layer thickness is 2 ~ 30nm.
Described n-type SiC, amorphous, nanocrystalline, microcrystal silicon, Si
1-xge
xfilm, adopt the assorted preparation of phosphorus Erbium-doped, related process parameters is: underlayer temperature 150 DEG C ~ 300 DEG C, 0.5 – 2%PH3/H2 and SiH
4volumetric flow of gas ratio is 0.01 ~ 2.0, and reaction chamber air pressure is 0.3mbar ~ 2.0mbar, and radio frequency power density is 10mW/cm
2~ 350mW/cm
2; N-shaped doped layer thickness range 2nm ~ 30nm;
(6) adopt the glass substrate after 532nm long wavelength laser scribing plated film, be convenient to TCO back electrode as wire connexon battery;
(7) TCO back electrode is prepared;
(8) adopt 532nm long wavelength laser scribing silica-base film and TCO back electrode, form single sub-battery;
(9) laser scribing is carried out to battery edge;
(10) circuit connection and encapsulation are carried out to battery.
Embodiment 2:
For binode silicon-based film solar cells, as shown in Figure 3, described gradient-structure comprises: amorphous Si (1.7eV) is transitioned into nano-crystalline Si (1.2eV), nano-crystalline Si (1.7eV) is transitioned into nano-crystalline Si (1.1eV) binode silicon-based film solar cells and amorphous Si (1.7eV) is transitioned into nano-crystalline Si (1.2eV), nano-crystalline Si (1.5eV) is transitioned into crystallite Si (1.1eV) binode silicon-based film solar cells, and the energy gap difference between arbitrary neighborhood is two-layer is 0.02eV; And there is by the standby many knots of sequential system that energy level falls progressively the thin-film solar cells of gradient-structure.Preparation method is with embodiment 1.
Embodiment 3:
For three knot silicon-based film solar cells, as shown in Figure 4, described gradient-structure comprises: amorphous Si (1.7eV) is transitioned into nano Si (1.2eV), high energy nano-crystalline Si (1.7eV) is transitioned into nano-crystalline Si (1.1eV), nano Si (1.5eV) is transitioned into crystallite Si (1.1eV), and the energy gap difference between arbitrary neighborhood is two-layer is 0.01eV.And there is by the standby many knots of sequential system that energy level falls progressively the thin-film solar cells of gradient-structure.Preparation method is with embodiment 1.
Claims (7)
1. have a silicon-based film solar cells for gradient-structure, comprise at least one pin and tie, it is characterized in that, the i layer in described pin knot is that crystal structure is identical and have the sandwich construction of Graded band-gap; Described sandwich construction from the first floor to last layer by high energy gap layer to low energy gap layer arrange, and arbitrary neighborhood two-layer between energy gap difference between 0.01 – 0.1eV.
2. have the silicon-based film solar cells of gradient-structure according to claim 1, it is characterized in that, described sandwich construction is selected from one of following five kinds of structures:
(1) gradient-structure of energy gap to be the amorphous SiC layer of 2.1-2.3eV to energy gap the be nanocrystalline SiC layer even transition of 1.8-2.1eV;
(2) gradient-structure of energy gap to be the amorphous Si layer of 1.7eV to energy gap the be nano-crystalline Si layer even transition of 1.7eV to 1.2eV;
(3) energy gap is the amorphous Si of 1.7eV to 1.2eV
1-xge
x(0≤X≤1) layer is the amorphous Si of 1.5eV to 1.2eV to energy gap
1-xge
xthe gradient-structure of (0≤X≤1) layer even transition;
(4) gradient-structure of energy gap to be the nano-crystalline Si layer of 1.7eV to 1.2eV to energy gap the be nano-crystalline Si layer even transition of 1.5eV to 1.1eV;
(5) gradient-structure of energy gap to be the nano-crystalline Si layer of 1.5eV to 1.2eV to energy gap the be crystallite Si layer even transition of 1.1eV.
3. according to claim 1 or 2, have the silicon-based film solar cells of gradient-structure, it is characterized in that, the gross thickness of described sandwich construction is between 0.1 micron to 3 microns.
4. according to claim 1 or 2, have the silicon-based film solar cells of gradient-structure, it is characterized in that, in described sandwich construction, the thickness of every one deck is between 1nm-100nm.
5. have the silicon-based film solar cells of gradient-structure according to claim 4, it is characterized in that, in described sandwich construction, the thickness of every one deck is between 1nm-10nm.
6. according to claim 1 or 2, have the silicon-based film solar cells of gradient-structure, it is characterized in that, described sandwich construction evenly reduces according to the form of energy gap difference between 0.01 – 0.02eV.
7. there is the silicon-based film solar cells of gradient-structure according to claim 2, it is characterized in that, the amorphous layer of at least one deck doping or undoped is inserted in the sandwich construction of described nanocrystalline and crystallite, described amorphous layer thickness is 1nm-10nm, and the amorphous layer of described doping is the amorphous layer that phosphorus or boron Erbium-doped are assorted.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779309A (en) * | 2015-04-14 | 2015-07-15 | 湖南共创光伏科技有限公司 | Silicon-based thin-film solar cell with gradient structure and manufacturing method of silicon-based thin-film solar cell |
| CN106711288A (en) * | 2017-01-05 | 2017-05-24 | 浙江师范大学 | Method for manufacturing nano-crystalline silicon thin-film solar cell |
| CN113206164A (en) * | 2021-04-26 | 2021-08-03 | 宜兴市昱元能源装备技术开发有限公司 | Cast tandem multi-junction photovoltaic cell |
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2015
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779309A (en) * | 2015-04-14 | 2015-07-15 | 湖南共创光伏科技有限公司 | Silicon-based thin-film solar cell with gradient structure and manufacturing method of silicon-based thin-film solar cell |
| CN106711288A (en) * | 2017-01-05 | 2017-05-24 | 浙江师范大学 | Method for manufacturing nano-crystalline silicon thin-film solar cell |
| CN113206164A (en) * | 2021-04-26 | 2021-08-03 | 宜兴市昱元能源装备技术开发有限公司 | Cast tandem multi-junction photovoltaic cell |
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