CN101738799A - Tft-lcd阵列基板及其制造方法 - Google Patents
Tft-lcd阵列基板及其制造方法 Download PDFInfo
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- CN101738799A CN101738799A CN 200810226094 CN200810226094A CN101738799A CN 101738799 A CN101738799 A CN 101738799A CN 200810226094 CN200810226094 CN 200810226094 CN 200810226094 A CN200810226094 A CN 200810226094A CN 101738799 A CN101738799 A CN 101738799A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (16)
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CN 200810226094 CN101738799B (zh) | 2008-11-06 | 2008-11-06 | Tft-lcd阵列基板及其制造方法 |
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CN 200810226094 CN101738799B (zh) | 2008-11-06 | 2008-11-06 | Tft-lcd阵列基板及其制造方法 |
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CN101738799A true CN101738799A (zh) | 2010-06-16 |
CN101738799B CN101738799B (zh) | 2011-09-07 |
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Cited By (23)
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CN102903675A (zh) * | 2012-10-12 | 2013-01-30 | 京东方科技集团股份有限公司 | 一种tft阵列基板、制作方法及显示装置 |
CN102929060A (zh) * | 2012-11-16 | 2013-02-13 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN102969282A (zh) * | 2012-11-16 | 2013-03-13 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN102981336A (zh) * | 2012-11-29 | 2013-03-20 | 京东方科技集团股份有限公司 | 阵列基板、显示模组及其制备方法 |
CN103018983A (zh) * | 2011-09-23 | 2013-04-03 | 三星显示有限公司 | 液晶显示器 |
CN103018993A (zh) * | 2012-12-31 | 2013-04-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管阵列基板、液晶屏及显示装置 |
CN103268878A (zh) * | 2012-11-07 | 2013-08-28 | 厦门天马微电子有限公司 | Tft阵列基板、tft阵列基板的制作方法及显示装置 |
CN103278986A (zh) * | 2013-04-01 | 2013-09-04 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的制造方法 |
CN103345095A (zh) * | 2013-07-11 | 2013-10-09 | 深圳市华星光电技术有限公司 | 一种tft-lcd阵列基板及显示装置 |
CN104035257A (zh) * | 2014-06-26 | 2014-09-10 | 南京中电熊猫液晶显示科技有限公司 | 像素阵列及其制作方法、显示面板 |
CN104090442A (zh) * | 2014-07-15 | 2014-10-08 | 京东方科技集团股份有限公司 | 阵列基板、液晶显示装置和阵列基板的制作方法 |
CN104460145A (zh) * | 2013-09-24 | 2015-03-25 | 海蒂斯技术有限公司 | 液晶显示装置 |
CN104460157A (zh) * | 2014-12-19 | 2015-03-25 | 深圳市华星光电技术有限公司 | 阵列基板及显示装置 |
WO2015096215A1 (zh) * | 2013-12-26 | 2015-07-02 | 深圳市华星光电技术有限公司 | 一种阵列基板公共电极结构及其制造方法、阵列基板 |
CN105607370A (zh) * | 2016-02-04 | 2016-05-25 | 深圳市华星光电技术有限公司 | 阵列基板及其制作方法、液晶面板 |
CN106773392A (zh) * | 2016-11-28 | 2017-05-31 | 深圳市华星光电技术有限公司 | 一种阵列基板及制作方法、曲面液晶显示面板 |
CN107203076A (zh) * | 2016-03-16 | 2017-09-26 | 群创光电股份有限公司 | 显示面板 |
CN107966835A (zh) * | 2017-11-02 | 2018-04-27 | 昆山龙腾光电有限公司 | 阵列基板和液晶显示装置及驱动方法 |
WO2018161408A1 (zh) * | 2017-03-10 | 2018-09-13 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及显示面板 |
CN109976058A (zh) * | 2019-04-17 | 2019-07-05 | 深圳市华星光电半导体显示技术有限公司 | 超窄边框液晶显示器及电子装置 |
CN110082975A (zh) * | 2019-04-12 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板以及显示面板 |
CN111624823A (zh) * | 2020-06-28 | 2020-09-04 | 京东方科技集团股份有限公司 | 用于tn型显示面板的像素结构、阵列衬底和tn型显示面板 |
CN115145082A (zh) * | 2022-07-18 | 2022-10-04 | 滁州惠科光电科技有限公司 | 像素结构、阵列基板及显示面板 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151699A (ja) * | 2000-11-15 | 2002-05-24 | Casio Comput Co Ltd | アクティブマトリクス型液晶表示装置 |
US20040174483A1 (en) * | 2003-03-07 | 2004-09-09 | Yayoi Nakamura | Liquid crystal display device having auxiliary capacitive electrode |
CN100508200C (zh) * | 2007-09-12 | 2009-07-01 | 上海广电光电子有限公司 | 薄膜晶体管阵列基板及其制造方法 |
-
2008
- 2008-11-06 CN CN 200810226094 patent/CN101738799B/zh active Active
Cited By (36)
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US9835915B2 (en) | 2011-09-23 | 2017-12-05 | Samsung Display Co., Ltd. | Liquid crystal display |
CN103018983A (zh) * | 2011-09-23 | 2013-04-03 | 三星显示有限公司 | 液晶显示器 |
US10365524B2 (en) | 2011-09-23 | 2019-07-30 | Samsung Display Co., Ltd. | Liquid crystal display |
CN102903675A (zh) * | 2012-10-12 | 2013-01-30 | 京东方科技集团股份有限公司 | 一种tft阵列基板、制作方法及显示装置 |
CN103268878B (zh) * | 2012-11-07 | 2016-02-24 | 厦门天马微电子有限公司 | Tft阵列基板、tft阵列基板的制作方法及显示装置 |
CN103268878A (zh) * | 2012-11-07 | 2013-08-28 | 厦门天马微电子有限公司 | Tft阵列基板、tft阵列基板的制作方法及显示装置 |
CN102929060A (zh) * | 2012-11-16 | 2013-02-13 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN102969282A (zh) * | 2012-11-16 | 2013-03-13 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
US9252159B2 (en) | 2012-11-16 | 2016-02-02 | Boe Technology Group Co., Ltd. | Array substrate and fabrication method thereof, and display device |
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CN102981336A (zh) * | 2012-11-29 | 2013-03-20 | 京东方科技集团股份有限公司 | 阵列基板、显示模组及其制备方法 |
CN102981336B (zh) * | 2012-11-29 | 2015-07-15 | 京东方科技集团股份有限公司 | 阵列基板、显示模组及其制备方法 |
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WO2015003406A1 (zh) * | 2013-07-11 | 2015-01-15 | 深圳市华星光电技术有限公司 | 一种tft-lcd阵列基板及显示装置 |
CN103345095A (zh) * | 2013-07-11 | 2013-10-09 | 深圳市华星光电技术有限公司 | 一种tft-lcd阵列基板及显示装置 |
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CN104035257B (zh) * | 2014-06-26 | 2017-02-15 | 南京中电熊猫液晶显示科技有限公司 | 像素阵列及其制作方法、显示面板 |
CN104090442A (zh) * | 2014-07-15 | 2014-10-08 | 京东方科技集团股份有限公司 | 阵列基板、液晶显示装置和阵列基板的制作方法 |
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CN107203076A (zh) * | 2016-03-16 | 2017-09-26 | 群创光电股份有限公司 | 显示面板 |
CN107203076B (zh) * | 2016-03-16 | 2020-06-12 | 群创光电股份有限公司 | 显示面板 |
CN106773392A (zh) * | 2016-11-28 | 2017-05-31 | 深圳市华星光电技术有限公司 | 一种阵列基板及制作方法、曲面液晶显示面板 |
WO2018161408A1 (zh) * | 2017-03-10 | 2018-09-13 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及显示面板 |
CN107966835B (zh) * | 2017-11-02 | 2019-12-20 | 昆山龙腾光电有限公司 | 阵列基板和液晶显示装置及驱动方法 |
CN107966835A (zh) * | 2017-11-02 | 2018-04-27 | 昆山龙腾光电有限公司 | 阵列基板和液晶显示装置及驱动方法 |
CN110082975A (zh) * | 2019-04-12 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板以及显示面板 |
CN109976058A (zh) * | 2019-04-17 | 2019-07-05 | 深圳市华星光电半导体显示技术有限公司 | 超窄边框液晶显示器及电子装置 |
CN111624823A (zh) * | 2020-06-28 | 2020-09-04 | 京东方科技集团股份有限公司 | 用于tn型显示面板的像素结构、阵列衬底和tn型显示面板 |
CN115145082A (zh) * | 2022-07-18 | 2022-10-04 | 滁州惠科光电科技有限公司 | 像素结构、阵列基板及显示面板 |
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